CN210006731U - Connecting structure of IGBT integrated module - Google Patents
Connecting structure of IGBT integrated module Download PDFInfo
- Publication number
- CN210006731U CN210006731U CN201822263888.4U CN201822263888U CN210006731U CN 210006731 U CN210006731 U CN 210006731U CN 201822263888 U CN201822263888 U CN 201822263888U CN 210006731 U CN210006731 U CN 210006731U
- Authority
- CN
- China
- Prior art keywords
- busbar
- chip
- elastic conductive
- connecting piece
- frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Connection Or Junction Boxes (AREA)
Abstract
The utility model relates to a connection structure of IGBT integrated module, including female row, the electrically conductive connecting piece of elasticity, IGBT chip, framework, its characterized in that female row passes through the electrically conductive connecting piece of elasticity with IGBT chip electrical connection, the framework is fixed female row with the chip, the utility model provides an IGBT integrated module electrical property is stable, the heat dissipation is stable, anti-vibration, long product life, environmental suitability are good, this IGBT integrated module production simple process, and mass production can adopt the machine intelligent production.
Description
Technical Field
The utility model belongs to the technical field of the electronic technology and specifically relates to a connection structure that relates to kinds of IGBT collection moulding piece and the IGBT collection moulding piece that forms.
Background
An Insulated Gate Bipolar Transistor (IGBT) is a composite fully-controlled voltage-driven power semiconductor device consisting of a Bipolar Junction Transistor (BJT) and an insulated Gate field effect transistor (MOS), and has the advantages of high input impedance of the MOSFET and low conduction voltage drop of the GTR. The GTR saturation voltage is reduced, the current carrying density is high, but the driving current is large; the MOSFET has small driving power, high switching speed, large conduction voltage drop and small current carrying density. The IGBT integrates the advantages of the two devices, and has small driving power and reduced saturation voltage. The method is very suitable for being applied to the fields of current transformation systems with direct-current voltage of 600V or more, such as alternating-current motors, frequency converters, switching power supplies, lighting circuits, traction transmission and the like. The IGBT module is a modularized semiconductor product formed by bridge packaging of an IGBT (insulated gate bipolar transistor chip) and an FWD (freewheeling diode chip) through a specific circuit; the packaged IGBT module is directly applied to equipment such as a frequency converter, a UPS (uninterrupted power supply) and the like.
The IGBT module is wide in power application, industry such as locomotive traction, electric gas vehicles, charging stations, wind power generation, power transmission, industrial frequency conversion and the like, and with the promotion of concepts such as electrical intelligence, energy conservation, environmental protection and the like, the functions of the IGBT module in the market are more and more important, the IGBT module in the world at present is all in a structure of a traditional small-power module, and with the great increase of the power of the IGBT module, the electrical performance, safety and service life of the IGBT module are seriously tested.
SUMMERY OF THE UTILITY MODEL
In order to solve the above problems, the present invention provides a connection structure of kinds of IGBT integrated modules, including a busbar, an elastic conductive connection member, an IGBT chip, and a frame body, wherein the busbar is electrically connected to the IGBT chip through the elastic conductive connection member, and the frame body fixes the busbar and the chip, the conductive connection member is made of metal, such as copper, aluminum, iron, and other conductive cutting materials, such as conductive polymer materials, semiconductor materials, etc., the elastic conductive connection member is compressible and deformable, and can rebound after being compressed and deformed, and the elastic conductive connection member is electrically connected between the busbar and the chip through the elastic conductive connection member, and at this time, the elastic conductive connection member has a compression and deformation of , and the frame body fixes the chip and the busbar so that the busbar and the chip cannot move relatively, and particularly, cannot move relatively separated along the direction of the conductive connection member.
, the connecting structure of the IGBT integrated module further comprises a mounting groove arranged on the busbar and allowing the elastic conductive connecting piece to be inserted, the elastic conductive connecting piece can be connected with the busbar through the mounting groove, the mounting groove accommodates the contact end of the elastic conductive connecting piece and the busbar and limits the elastic conductive connecting piece to slide along the surface of the busbar, the elastic conductive connecting piece can only move along the compression and extension directions, and the movement in other directions, especially the movement in the vertical compression and extension directions, is limited.
, the frame body further comprises a mounting hole, the chip is mounted in the mounting hole , the connecting structure of the IGBT integrated module further comprises a chip substrate, the chip is fixed on the chip substrate, the chip substrate is mounted in the mounting hole, the mounting hole receives the chip substrate and limits the position of the chip substrate, the chip substrate is in a fixed position on the lower surface of the frame body and cannot slide freely on the lower surface of the frame body , the mounting hole is further provided with depth, the contact end of the elastic conductive connecting piece and the chip can be received and is in a fixed position, the contact end can only move on the contact surface in the compression and stretching directions of the elastic conductive connecting piece, and the movement in other directions, particularly the vertical compression and stretching directions, is limited.
, the mounting grooves of the busbar are or more and can be connected with or more elastic conductive connecting pieces, the mounting holes of the frame body are or more and can be used for mounting or more IGBT chips, and the or more IGBT chips are correspondingly connected with or more elastic conductive connecting pieces;
, according to the integrated module with different power, that is, according to the different number and different positions of the chips, the elastic conductive connectors with different number, position, direction and/or current carrying capacity can be selected to connect with the busbar and the chips, or more of the elastic conductive connectors can be inserted into or more of the mounting slots when connecting with or more of the chips;
, the elastic conductive connecting piece is a gourd-shaped conductor, the middle part has a relatively large width, the upper and lower connecting ends have relatively small widths, the connecting ends connected with the busbar are two wound contacts which can be inserted into the mounting groove of the busbar, and the connecting ends connected with the chip are flat contacts which can be connected with the chip;
, the connecting structure further comprises a heat sink, the frame is connected with the heat sink through bolts, so that the integrated module is locked on the heat sink;
, the busbar comprises a positive plate, a negative plate and a series plate, the positive plate, the negative plate and the series plate are respectively coated with powder for 1 time of insulation, and the three plates are bonded into a whole through a polymer sheet.
The powder coating for insulation adopts kinds of epoxy resin materials or epoxy resin and glass fiber composite materials as the insulation material, the insulation pad or the insulation powder, which are adopted in the embodiment of the utility model, are all epoxy resin materials without special description.
is insulation, the second is adhesion bonding the positive plate, the negative plate and the tandem plate to , the third is oxidation resistance, the positive plate, the negative plate and the tandem plate are partially or completely coated by the polymer material after adhesion, and the oxidation resistance is realized.
, the busbar is an integrally formed busbar, a mounting groove is formed on the busbar, the end of the elastic conductive connecting piece is inserted into the mounting groove to be connected with the busbar, the other end of the elastic conductive connecting piece is connected with the chip, the chip is fixed on the chip substrate, the chip substrate is mounted in a mounting hole of the frame, the busbar and the chip substrate are fixed by the frame to form an integrated module, preferably, the integral forming mode is injection molding or molding, the busbar is integrally formed into a body through injection molding and molding, a integral plastic shell is formed outside the busbar, and or a plurality of mounting grooves for the elastic conductive connecting piece to be inserted into are formed on the plastic shell.
In addition the utility model discloses still provide the method of the assembly or connection with above-mentioned each IGBT integrated module's connection structure, according to the integrated module of different power size, promptly according to different quantity and different positions of chip, can select different quantity, position, direction and/or current-carrying capacity the elasticity electrically conductive connecting piece with female arranging with the chip is connected, or a plurality of the elasticity electrically conductive connecting piece with or a plurality of can correspond when the chip is connected and insert or a plurality of the mounting groove.
In addition, the utility model also provides IGBT integrated modules, which comprises a busbar, an elastic conductive connecting piece, a chip substrate and a frame body, and is characterized in that the end of the elastic conductive connecting piece is connected with the busbar, the other end of is connected with the chip, the chip is fixed on the chip substrate, and the frame body fixes the busbar and the chip substrate;
, in the IGBT integrated module, an installation groove into which the elastic conductive connecting piece can be inserted is formed on the busbar, and the elastic conductive connecting piece can be connected with the busbar through the installation groove;
, the IGBT integrated module has a frame with mounting holes, and the chip substrate can be placed in the mounting holes to fix the chip substrate;
, in the IGBT integrated module, the bus bar has or more mounting grooves capable of being connected to or more elastic conductive connectors, the frame has or more mounting holes capable of fixing or more chip substrates, each chip substrate may further include or more chips, and the or more chips are correspondingly connected to the or more elastic conductive connectors;
, according to the integrated modules with different power levels, that is, according to the different numbers and different positions of the chips, the IGBT integrated modules can select different numbers, positions, directions and/or current carrying capacities of the elastic conductive connectors to connect with the busbar and the chips, and or more of the elastic conductive connectors can be inserted into or more of the mounting slots when connecting with or more of the chips;
, in the IGBT integrated module, the elastic conductive connecting piece is substantially gourd-shaped, the middle part has a relatively large width, the upper and lower connecting ends have relatively small widths, the connecting ends connected to the busbar are two wound contacts which can be inserted into the mounting groove of the busbar, and the connecting ends connected to the chip are flat contacts which can be connected to the chip;
, the IGBT integrated module is connected with the frame and the heat sink through bolts, so that the integrated module is locked on the heat sink;
, the IGBT integrated module, the busbar comprises a positive plate, a negative plate and a series connection plate, the positive plate, the negative plate and the series connection plate are respectively insulated for 1 time by powder coating, and the three plates are bonded into a whole by a polymer sheet;
, methods for connecting IGBT integrated modules include that an integrally formed busbar is adopted, an installation groove is formed in the busbar, an end of an elastic conductive connecting piece is inserted into the installation groove to be connected with the busbar, the other end of the elastic conductive connecting piece is connected with a chip, the chip is fixed on a chip substrate, the chip substrate is installed in an installation hole of a frame body, and the busbar and the chip substrate are fixed by the frame body to form an integrated module;
, according to the methods for connecting IGBT integrated modules, different numbers, positions, directions and/or current carrying capacities of the elastic conductive connectors can be selected to connect with the busbar and the chips according to different power levels of the integrated modules, i.e. according to different numbers and different positions of the chips, i.e. or more of the elastic conductive connectors can be inserted into or more of the mounting slots when being connected with or more of the chips.
is insulating, secondly bonds and bonds positive plate, negative plate and concatenation board and plays , thirdly is anti-oxidation, positive plate, negative plate and concatenation board are by partial or whole cladding of macromolecular material after bonding, play anti-oxidation effect.
Compared with the prior art: the IGBT integrated module provided by the utility model has stable electrical performance, stable heat dissipation, vibration resistance, long service life of products and good environmental adaptability, the production process of the IGBT integrated module is simple, the mass production can adopt machine intelligent production, and the production cost is reduced to a great extent; the IGBT integrated module can easily change the product model and the technical requirement according to different power and different structures, thereby reducing the development cost and shortening the development period.
Drawings
Fig. 1 is a front view of the integrated module (without the frame body).
Fig. 2 is a top view of the integrated module (including the frame body) of the present invention.
Fig. 3 is a schematic diagram of the integrated module bus bar upper slot.
Fig. 4 is a structure diagram of the elastic conductive connecting member of the integrated module of the present invention.
Fig. 5 is a schematic diagram of the integrated module frame of the present invention.
Fig. 6 is a three-dimensional schematic diagram (without a frame) of the integrated module of the present invention.
Detailed Description
The following is illustrated by example :
as shown in fig. 1-6, kinds of IGBT integrated modules 1 include a busbar 2, an elastic conductive connector 3, a chip 4, a chip substrate 5, and a frame 6, where the uppermost is the busbar 2, the elastic conductive connector 3 is in the middle, the upper end of the elastic conductive connector 3 is connected to the busbar 2, the lower end of the elastic conductive connector is connected to the chip 4, the chip 4 is fixed on the chip substrate 5, the lower part of the frame 6 is provided with a mounting hole 7, the chip substrate is mounted on the frame 6 through the mounting hole 7, so as to horizontally fix the chip substrate 2, the frame 6 fixes the busbar 2 and the chip substrate 5 integrally from top to bottom, and the frame 6 is connected to a heat sink (not shown) through a bolt, so that the integrated module 1 is locked on the heat sink, that the chip substrate 5 and the heat sink are flexibly compressed while the busbar 2.
The method comprises the steps that a busbar polar plate is made of semi-hard high-conductivity copper alloy, a positive plate, a negative plate and a series plate of the busbar are respectively insulated and oxidized for protection by powder coating, each polar plate enters and exits from a lap joint, the busbar 2 is integrally formed and is bonded by a low-water-absorption high-voltage-resistant polymer sheet, meanwhile, secondary voltage-resistant treatment is achieved, the thickness of an insulating layer coated on one side of each polar plate of the busbar 2 is 0.3-0.5 mm, the voltage resistance reaches 20KV/mm, the thickness of a bonding layer of the polymer sheet is 0.2mm, the voltage resistance reaches 25KV/mm, three polar plates are insulated for the first time by coating, then the three polar plates are bonded into a whole by the polymer sheet, the busbar 2 is insulated for the 2 time, the busbar 2 is integrally plasticized, the IGBT integrated module is ensured to have a good anti-vibration effect, a plurality of installation grooves 8 are formed by integral plasticizing, the specific installation grooves 8 are arranged on the outer layer after the busbar is plasticized, as shown in figure 3, the arrangement area and the standby arrangement area of the elastic conductive connecting piece 3 can be flexibly developed according to different current-carrying products, and the requirements of the busbar 2 or the flexible product, wherein the bus can be developed according to different specifications of different current-carrying products according to the requirements of the IGBT integrated module 1 power or different specifications.
As shown in fig. 4, the elastic conductive connecting piece 3 is a flexible metal connecting piece, which is subjected to anti-oxidation treatment by silver electroplating, and is approximately in a gourd-shaped frame shape, the middle part of the elastic conductive connecting piece is relatively wide, the upper and lower contact widths of the elastic conductive connecting piece are relatively small, the upper and lower contact widths of the elastic conductive connecting piece and the busbar connecting end 9 are two coiled contacts, the elastic conductive connecting piece and the busbar connecting end can be inserted into the busbar mounting groove 8, the corresponding position of the busbar mounting groove 8 is not subjected to insulation coating, so that electric connection is formed, the chip connecting end 10 is flat contacts, the elastic conductive connecting.
As shown in fig. 5-6, 2 mounting holes 7 are formed in the frame 6, 2 nickel-based chip substrates 5 are pressed into the mounting holes 7 by the elastic conductive connectors 3, each chip substrate 5 has 6 groups of chips 4, the lower ends of 12 elastic conductive connectors 3 are respectively pressed against 12 chips 4, the upper ends of 12 elastic conductive connectors are respectively inserted into the mounting grooves 8 of the busbar 2, the frame 6 further steps fix the busbar 2 and the chip substrate 5 as a whole, a pressing plate 11 is further arranged between the frame 6 and the busbar 2, the busbar 2 is pressed by the pressing plate 11, the pressing plate can be omitted, the surfaces of the integrally plasticized busbar, which are not grooved, are set as pressed surfaces, the frame 6 integrally encapsulates the busbar 2, the elastic conductive connectors 3 and the chip substrate 5 to form the integrated module 1, and then is locked on a heat sink (not shown) by bolts, and the chip substrate 5 is directly pressed into the mounting holes 7 and contacted with the heat sink for heat dissipation.
When the IGBT integrated module 1 is assembled, the busbar 2, the elastic conductive connecting piece 3 and the chip substrate 5 have quantitative coincidence dimension in the vertical direction, when the IGBT integrated module is locked by a bolt, the elastic conductive connecting piece 3 flexibly communicates the chip 4 with the busbar 2, and contact force is generated by the coincidence dimension, so that the thermal resistance of the chip substrate 4 and a heat dissipation module is also reduced, the elastic conductive connection 3 of the module 1 is not welded and is directly assembled into a required mounting groove 8, the electrical connection busbar 2 and the chip 4 conduct, the flexible electric connecting piece material is not damaged, the stability of a product is not influenced, the problem that the product is not electrically unstable under the condition of thermal expansion and cold contraction is solved, a good contact force can be provided to effectively attach a radiator, good heat dissipation performance is not influenced, the chip is prevented from being damaged, the chip substrate is uniformly contacted with the plane of the radiator, meanwhile, the flexible connection can effectively compensate the overall matching error of the module, meanwhile, external structural parts such as a pressing plate, a frame body and the like adopt high-thermal-conduction molecular materials, the problem that the radiator aims at the integrity of the heat dissipation of the chip is solved, the integrity of the heat dissipation outside the heat dissipation of the integrated.
Meanwhile, connection methods corresponding to the module are that firstly, an integrally plasticized busbar is adopted, or a plurality of installation grooves are formed on the busbar, the end of an elastic conductive connecting piece is inserted into the installation grooves to be electrically connected with the busbar, the other end of the elastic conductive connecting piece is connected with a chip, the chip is fixed on a chip substrate, the chip substrate is installed in an installation hole of a frame, the busbar and the chip substrate are fixed by the frame to form an integrated module, and finally the frame is connected with a radiator through bolts, so that the integrated module is locked on the radiator, and the elastic conductive connecting pieces with different numbers, positions, directions and/or current carrying capacities can be selected to be connected with the busbar and the chip according to the different numbers and different positions of the chip, namely or a plurality of the elastic conductive connecting pieces can be correspondingly inserted into or a plurality of the installation grooves when being connected with or a plurality of the chips.
is insulating, secondly bonds and bonds positive plate, negative plate and concatenation board at play, thirdly is anti-oxidation, positive plate, negative plate and concatenation board are by macromolecular material part or whole cladding, play anti-oxidation effect, insulating material is kinds of epoxy resin materials or epoxy resin adds glass fiber's synthetic material, the insulating material, insulating pad or the insulating effect powder that adopt in the embodiment of the utility model, all are epoxy resin materials without the special explanation.
It is to be understood that the above embodiments are merely exemplary embodiments that have been employed to illustrate the principles of the present invention, and that the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (13)
- The connecting structure of the IGBT integrated modules comprises a busbar, an elastic conductive connecting piece, an IGBT chip and a frame body, and is characterized in that the busbar is electrically connected with the IGBT chip through the elastic conductive connecting piece, and the frame body fixes the busbar and the chip.
- 2. The connection structure according to claim 1, wherein: still including setting up female the confession on arranging the installation groove that the electrically conductive connecting piece of elasticity was inserted, through the installation groove, the electrically conductive connecting piece of elasticity can with female the arranging is connected.
- 3. The connection structure according to claim 1 or 2, wherein: the frame body further comprises a mounting hole, and the chip is mounted in the mounting hole.
- 4. The connection structure of claim 3, wherein the bus bar has or more mounting slots for connecting or more elastic conductive connectors, the frame has or more mounting holes for mounting or more IGBT chips, and the or more IGBT chips are correspondingly connected to the or more elastic conductive connectors.
- 5. The connection structure of claim 4, wherein different numbers, positions, directions and/or current carrying capacities of the elastic conductive connection members can be selected to connect to the bus bars and the chips according to different numbers and different positions of the chips, and or more of the elastic conductive connection members can be inserted into or more of the mounting slots when connecting to or more of the chips.
- 6. The connecting structure according to claim 5, wherein the elastic conductive connecting member is a substantially gourd-shaped conductive body, the width of the middle portion of the elastic conductive connecting member is greater than the width of the two connecting ends of the elastic conductive connecting member, the connecting ends connected to the bus bar are two wound contacts which can be inserted into the mounting grooves of the bus bar, and the connecting ends connected to the chip are flat contacts which can be connected to the chip.
- 7. The connecting structure according to claim 6, further comprising a heat sink, wherein the frame is connected to the heat sink by bolts, so that the integrated module is locked on the heat sink.
- 8. The connection structure according to claim 7, wherein the busbar comprises a positive plate, a negative plate and a tandem plate, and the positive plate, the negative plate and the tandem plate are respectively insulated for 1 time by powder coating, and the three plates are bonded into a whole by a polymer sheet.
- 9. The connecting structure according to claim 3, wherein the busbar is an integrally formed busbar, a mounting groove is formed in the busbar, an end of the elastic conductive connecting piece is inserted into the mounting groove to be connected with the busbar, the other end of the elastic conductive connecting piece is connected with a chip, the chip is fixed on a chip substrate, the chip substrate is mounted in a mounting hole of a frame, and the busbar and the chip substrate are fixed by the frame to form an integrated module.
- 10. The connecting structure of claim 4, wherein the busbar is integrally formed, a mounting groove is formed on the busbar, an end of the elastic conductive connecting piece is inserted into the mounting groove to be connected with the busbar, the other end of the elastic conductive connecting piece is connected with a chip, the chip is fixed on a chip substrate, the chip substrate is mounted in a mounting hole of a frame, and the busbar and the chip substrate are fixed by the frame to form an integrated module.
- 11. The connecting structure of claim 5, wherein the busbar is integrally formed, a mounting groove is formed on the busbar, an end of the elastic conductive connecting piece is inserted into the mounting groove to be connected with the busbar, the other end of the elastic conductive connecting piece is connected with a chip, the chip is fixed on a chip substrate, the chip substrate is mounted in a mounting hole of a frame, and the busbar and the chip substrate are fixed by the frame to form an integrated module.
- 12. The connecting structure of claim 6, wherein the busbar is integrally formed, a mounting groove is formed on the busbar, an end of the elastic conductive connecting piece is inserted into the mounting groove to be connected with the busbar, the other end of the elastic conductive connecting piece is connected with a chip, the chip is fixed on a chip substrate, the chip substrate is mounted in a mounting hole of a frame, and the busbar and the chip substrate are fixed by the frame to form an integrated module.
- 13. The connecting structure of claim 7, wherein the busbar is integrally formed, a mounting groove is formed on the busbar, an end of the elastic conductive connecting piece is inserted into the mounting groove to be connected with the busbar, the other end of the elastic conductive connecting piece is connected with a chip, the chip is fixed on a chip substrate, the chip substrate is mounted in a mounting hole of a frame, and the busbar and the chip substrate are fixed by the frame to form an integrated module.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810439881 | 2018-05-09 | ||
CN2018104398815 | 2018-05-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN210006731U true CN210006731U (en) | 2020-01-31 |
Family
ID=67241772
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201822263888.4U Active CN210006731U (en) | 2018-05-09 | 2018-12-31 | Connecting structure of IGBT integrated module |
CN201910386507.8A Pending CN110034091A (en) | 2018-05-09 | 2019-05-09 | The connection structure of IGBT integration module |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910386507.8A Pending CN110034091A (en) | 2018-05-09 | 2019-05-09 | The connection structure of IGBT integration module |
Country Status (1)
Country | Link |
---|---|
CN (2) | CN210006731U (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112993616B (en) * | 2019-12-16 | 2023-04-07 | 株洲中车时代半导体有限公司 | Power module structure |
-
2018
- 2018-12-31 CN CN201822263888.4U patent/CN210006731U/en active Active
-
2019
- 2019-05-09 CN CN201910386507.8A patent/CN110034091A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
CN110034091A (en) | 2019-07-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9854708B2 (en) | Unit for semiconductor device | |
CN102024976B (en) | Electric connecting structure for storage battery of electric automobile | |
CN102867794B (en) | Semiconductor module | |
CN111627899A (en) | Integrated IGBT packaging structure based on DBC layout | |
CN210006731U (en) | Connecting structure of IGBT integrated module | |
CN102029922A (en) | Double-sided aluminum substrate-based power metal oxide semiconductor field effect transistor (MOSFET) parallel circuit and structural design | |
CN110797318A (en) | IGBT packaging structure with double-sided heat pipe cooling | |
CN212648422U (en) | Copper bar flexible connection structure with heat dissipation function | |
CN220400582U (en) | Substrate of intelligent power module, intelligent power module and electronic equipment | |
CN203774281U (en) | Intelligent power module integrally injection-moulded and packaged | |
CN201877144U (en) | Insulating wrapped laminated bus structure | |
CN214592129U (en) | Pcb assembling structure | |
CN213924618U (en) | Photovoltaic module busbar insulating tape | |
CN109217636A (en) | A kind of power device of generic encapsulation | |
CN211720458U (en) | Insulated gate bipolar transistor module | |
CN110379626B (en) | Capacitor for parallel IGBT, manufacturing process and application method thereof | |
CN211045425U (en) | PIN needle and IGBT shell thereof used in high-temperature repeated impact environment | |
CN213637487U (en) | IGBT unit group | |
JP2016144377A (en) | Dc side wiring board of power module and method of manufacturing the same | |
JP2015103670A (en) | Power conversion device and method of manufacturing the same | |
CN218333755U (en) | High power density's little equipment chip power | |
CN219761439U (en) | Power enhancement module | |
CN213426103U (en) | High current-carrying modularized photovoltaic assembly bypass element and photovoltaic assembly junction box | |
CN116093142B (en) | Crimping type insulated gate bipolar transistor for flexible power transmission | |
JP2020025058A (en) | Semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant |