CN212542441U - Trench gate IGBT device with adjustable capacitance - Google Patents

Abstract

The utility model discloses a trench gate IGBT device with adjustable electric capacity, including N type drift region, the bottom in N type drift region is provided with N + buffer zone, the bottom in N + buffer zone is provided with P + collecting region, and the top in N type drift region is provided with P type base region, and the top of P type base region is provided with P type channel region, and the both sides at N type drift region top all run through and are provided with insulating gate oxide. The utility model discloses a N type drift region, N + buffer zone, P + collecting region, P type base region, P type channel region, the card post, N type source region, adjustable electric capacity, insulating dielectric plate, P + launch site, the electrically conductive polycrystalline silicon of grid, the dielectric body, the cooperation of insulating gate oxide layer and insulating rubber pad is used, it does not possess adjustable electric capacity usually to have solved current ditch slot bars IGBT device, the in-process that uses can't change IGBT's electric capacity according to the circuit demand, and the adjustable electric capacity of the different specifications of unable installation, the problem of the suitability of ditch slot bars IGBT device has been reduced.

Description

Trench gate IGBT device with adjustable capacitance

Technical Field

The utility model relates to a trench gate IGBT device technical field specifically is trench gate IGBT device with adjustable electric capacity.

Background

The IGBT and the insulated gate bipolar transistor are composite fully-controlled voltage-driven power semiconductor devices consisting of BJTs (bipolar transistors) and MOS (insulated gate field effect transistors), have the advantages of both high input impedance of the MOSFET and low conduction voltage drop of GTR, and have the advantages of reduced GTR saturation voltage, high current-carrying density and larger driving current; the MOSFET has small driving power, high switching speed, large conduction voltage drop and small current-carrying density, the IGBT integrates the advantages of the two devices, has small driving power and reduced saturation voltage, and is very suitable for being applied to the fields of current transformation systems with direct-current voltage of 600V or more, such as alternating-current motors, frequency converters, switching power supplies, lighting circuits, traction transmission and the like.

The conventional trench gate IGBT device does not usually have an adjustable capacitor, the capacitance of the IGBT cannot be changed according to circuit requirements in the using process, the adjustable capacitors with different specifications cannot be installed, and the applicability of the trench gate IGBT device is reduced.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a ditch slot gate IGBT device with adjustable electric capacity possesses the advantage that can adjust electric capacity, has solved current ditch slot gate IGBT device and has not possessed adjustable electric capacity usually, can't change IGBT's electric capacity according to the circuit demand at the in-process that uses, and can't install the adjustable electric capacity of different specifications, has reduced the problem of the suitability of ditch slot gate IGBT device.

In order to achieve the above object, the utility model provides a following technical scheme: the trench gate IGBT device with the adjustable capacitor comprises an N-type drift region, wherein an N + buffer region is arranged at the bottom of the N-type drift region, a P + collector region is arranged at the bottom of the N + buffer region, a P-type base region is arranged at the top of the N-type drift region, a P-type channel region is arranged at the top of the P-type base region, an insulating gate oxide layer penetrates through two sides of the top of the N-type drift region, a dielectric body is fixedly connected with the middle end of the inner cavity of the insulating gate oxide layer, a gate conductive polycrystalline silicon is fixedly connected with one side, opposite to the inner cavity of the insulating gate oxide layer, the adjustable capacitor is placed at one side, opposite to the inner cavity of the insulating gate oxide layer, P + emitter regions are arranged at two sides and the middle end of the top of the P-type channel region, an N-type source region is arranged at one side, opposite to the insulating gate oxide layer, and, the two sides of the bottom of the insulating medium plate are fixedly connected with clamping columns, and the bottoms of the clamping columns penetrate through the inside of the P-type channel area.

Preferably, both sides of the top of the P-shaped channel area are provided with grooves, the inner walls of the grooves are fixedly connected with insulating rubber pads, and the bottoms of the clamping columns penetrate through the inner cavities of the grooves and are in contact with the inner walls of the insulating rubber pads.

Preferably, cell grooves are formed in two sides of the top of the N-type drift region, the outer surface of the insulating gate oxide layer is fixedly connected with the inner walls of the cell grooves, and the insulating gate oxide layer is made of silicon dioxide.

Preferably, the width of the gate conductive polysilicon is 0.5-2 μm, and the depth of the cell trench is 5-8 μm.

Compared with the prior art, the beneficial effects of the utility model are as follows:

1. the utility model discloses a N type drift region, N + buffer zone, P + collecting region, P type base region, P type channel region, the card post, N type source region, adjustable electric capacity, insulating dielectric plate, P + launch site, the electrically conductive polycrystalline silicon of grid, the dielectric body, the cooperation of insulating gate oxide layer and insulating rubber pad is used, possess the advantage that can adjust electric capacity, it does not possess adjustable electric capacity usually to have solved current ditch slot gate IGBT device, can't change IGBT's electric capacity according to the circuit demand at the in-process that uses, and can't install the adjustable electric capacity of different specifications, the problem of the suitability of ditch gate IGBT device has been reduced.

2. The utility model discloses an pack adjustable electric capacity and grid conductive polysilicon in cellular slot for electric capacity of establishing ties between the gate electrode of IGBT device and the projecting pole, thereby can reduce electric capacity Cge's size, through the use of recess and card post, can install insulating medium board, thereby can carry on spacingly to adjustable electric capacity, avoid it to expose, through the use of insulating rubber pad, can avoid the card post to drop from the recess, improve insulating medium board's installation stability.

Drawings

FIG. 1 is a schematic structural view of the present invention;

fig. 2 is an enlarged structural view of a in fig. 1 according to the present invention.

In the figure: the device comprises a 1N type drift region, a 2N + buffer region, a 3P + collector region, a 4P type base region, a 5P type channel region, a 6 clamping column, a 7N type source region, an 8 adjustable capacitor, a 9 insulating dielectric plate, a 10P + emitter region, 11 grid conductive polycrystalline silicon, 12 dielectric bodies, 13 insulating grid oxide layers and 14 insulating rubber pads.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front end", "rear end", "both ends", "one end", "the other end", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element to be referred must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted", "provided", "connected", and the like are to be construed broadly, such as "connected", which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Referring to fig. 1-2, a trench gate IGBT device with an adjustable capacitor includes an N-type drift region 1, an N + buffer region 2 is disposed at the bottom of the N-type drift region 1, a P + collector region 3 is disposed at the bottom of the N + buffer region 2, a P-type base region 4 is disposed at the top of the N-type drift region 1, a P-type channel region 5 is disposed at the top of the P-type base region 4, an insulating gate oxide layer 13 is disposed on both sides of the top of the N-type drift region 1, a dielectric body 12 is fixedly connected to the middle end of the inner cavity of the insulating gate oxide layer 13, a gate conductive polysilicon 11 is fixedly connected to the opposite side of the inner cavity of the insulating gate oxide layer 13, an adjustable capacitor 8 is disposed on the opposite side of the inner cavity of the insulating gate oxide layer 13, a P + emitter region 10 is disposed on both sides and the middle end of the top of the P-type channel region 5, and an, an insulating dielectric plate 9 is arranged at the top of the P-type channel region 5, clamping columns 6 are fixedly connected to two sides of the bottom of the insulating dielectric plate 9, and the bottoms of the clamping columns 6 penetrate into the P-type channel region 5;

grooves are formed in two sides of the top of the P-type channel area 5, insulating rubber pads 14 are fixedly connected to the inner walls of the grooves, the bottoms of the clamping columns 6 penetrate through the inner cavities of the grooves and are in contact with the inner walls of the insulating rubber pads 14, the insulating dielectric plates 9 can be installed through the grooves and the clamping columns 6, accordingly, the adjustable capacitors 8 can be limited and prevented from being exposed, the clamping columns 6 can be prevented from falling off from the grooves through the insulating rubber pads 14, and the installation stability of the insulating dielectric plates 9 is improved;

cell grooves are formed in two sides of the top of the N-type drift region 1, the outer surface of the insulating gate oxide layer 13 is fixedly connected with the inner walls of the cell grooves, the insulating gate oxide layer 13 is made of silicon dioxide, and the adjustable capacitor 8 and the grid conductive polycrystalline silicon 11 are filled in the cell grooves, so that a capacitor is connected in series between a grid electrode and an emitting electrode of the IGBT device, and the size of the capacitor Cge can be reduced;

the width of the grid conductive polysilicon 11 is 0.5-2 μm, and the depth of the cellular trench is 5-8 μm;

through N type drift region 1, N + buffer zone 2, P + collecting region 3, P type base region 4, P type channel region 5, card post 6, N type source region 7, adjustable capacitor 8, insulating dielectric plate 9, P + emitter region 10, grid conductive polycrystalline silicon 11, dielectric body 12, insulating gate oxide layer 13 and insulating rubber pad 14's cooperation use, possess the advantage that can adjust electric capacity, it does not usually possess adjustable capacitor 8 to have solved current trench gate IGBT device, can't change the electric capacity of IGBT according to the circuit demand in the in-process of using, and can't install the adjustable capacitor 8 of different specifications, the problem of the suitability of trench gate IGBT device has been reduced.

The working principle is as follows: the adjustable capacitor 8 and the grid conductive polysilicon 11 are filled in the cell groove, so that a capacitor is connected between the grid electrode and the emitter of the IGBT device in series, then the adjustable capacitor 8 is adjusted, the size of the capacitor Cge can be reduced, when the adjustable capacitors 8 of different specifications need to be replaced, the insulating dielectric plate 9 is taken down, then the adjustable capacitors 8 are taken out, and after the adjustable capacitors 8 of different specifications are replaced, the insulating dielectric plate 9 is covered again.

In summary, the following steps: the trench gate IGBT device with the adjustable capacitor is characterized in that the adjustable capacitors of different specifications cannot be installed and the applicability of the trench gate IGBT device is reduced through the cooperation of the N-type drift region 1, the N + buffer region 2, the P + collector region 3, the P-type base region 4, the P-type channel region 5, the clamping column 6, the N-type source region 7, the adjustable capacitor 8, the insulating dielectric plate 9, the P + emitter region 10, the grid conductive polycrystalline silicon 11, the dielectric body 12, the insulating grid oxide layer 13 and the insulating rubber pad 14.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (4)

1. Trench gate IGBT device with adjustable electric capacity includes N type drift region (1), its characterized in that: the bottom in N type drift region (1) is provided with N + buffer zone (2), the bottom in N + buffer zone (2) is provided with P + collector region (3), the top in N type drift region (1) is provided with P type base region (4), the top in P type base region (4) is provided with P type channel region (5), the both sides at N type drift region (1) top all run through and are provided with insulating gate oxide (13), the well end fixedly connected with dielectric body (12) of insulating gate oxide (13) inner chamber, the relative one side fixedly connected with grid conductive polysilicon (11) in insulating gate oxide (13) inner chamber, adjustable electric capacity (8) have been placed to the opposite one side in insulating gate oxide (13) inner chamber, the both sides and the well end at P type channel region (5) top all are provided with P + emitter region (10), the top in P type channel region (5) and be located the opposite one side of insulating gate oxide (13) and be provided with N type source region (7) The top of the P-type channel area (5) is provided with an insulating medium plate (9), the two sides of the bottom of the insulating medium plate (9) are fixedly connected with clamping columns (6), and the bottoms of the clamping columns (6) penetrate through the inside of the P-type channel area (5).

2. The trench gate IGBT device with adjustable capacitance of claim 1, wherein: grooves are formed in two sides of the top of the P-shaped channel area (5), insulating rubber pads (14) are fixedly connected to the inner walls of the grooves, and the bottoms of the clamping columns (6) penetrate through the inner cavities of the grooves and are in contact with the inner walls of the insulating rubber pads (14).

3. The trench gate IGBT device with adjustable capacitance of claim 1, wherein: cell grooves are formed in two sides of the top of the N-type drift region (1), the outer surface of the insulating gate oxide layer (13) is fixedly connected with the inner wall of each cell groove, and the insulating gate oxide layer (13) is made of silicon dioxide.

4. The trench gate IGBT device with adjustable capacitance of claim 3, characterized in that: the width of the grid conductive polysilicon (11) is 0.5-2 μm, and the depth of the cellular trench is 5-8 μm.

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