CN212489261U - Inner core cavity structure for semiconductor temperature control bed - Google Patents
Inner core cavity structure for semiconductor temperature control bed Download PDFInfo
- Publication number
- CN212489261U CN212489261U CN202020673319.1U CN202020673319U CN212489261U CN 212489261 U CN212489261 U CN 212489261U CN 202020673319 U CN202020673319 U CN 202020673319U CN 212489261 U CN212489261 U CN 212489261U
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- CN
- China
- Prior art keywords
- core cavity
- inner core
- water guide
- main body
- semiconductor temperature
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000011148 porous material Substances 0.000 claims abstract description 22
- 238000009434 installation Methods 0.000 claims abstract description 6
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 6
- 238000005057 refrigeration Methods 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 210000003850 cellular structure Anatomy 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- Heat-Exchange Devices With Radiators And Conduit Assemblies (AREA)
Abstract
The utility model discloses an inner core cavity structure for a semiconductor temperature control bed, which comprises an inner core cavity main body, wherein the inner core cavity main body is columnar or strip-shaped and is non-lamellar; a plurality of water guide channels are arranged in the inner core cavity main body to form a honeycomb structure, and the length of each water guide channel is equal to or greater than that of the inner core cavity main body; the inner wall of the water guide pore canal is provided with a secondary pore canal; and the side surface of the inner core cavity body is provided with an installation platform convenient for semiconductor fixing. The utility model discloses improve the novelty, improved the structure in inner core chamber, adopted column or banding form, formed cellular structure, increased the installation face of semiconductor piece, it is better to the refrigeration of control by temperature change bed heat transfer case or the efficiency of heating like this, can increase the COP value.
Description
Technical Field
The utility model belongs to the technical field of semiconductor structure, concretely relates to inner core cavity structure for semiconductor temperature control bed.
Background
The invention is applied to a heat exchange structure of a semiconductor temperature control bed, the semiconductor temperature control bed mainly comprises a water heating mattress, water guide pipes, a heat exchange box and a control box, wherein an inner core cavity is arranged in the heat exchange box, a semiconductor sheet and an outer circulation box are arranged on the outer wall of the inner core cavity, the inner core cavity is made of heat conduction metal, one group of water guide pipes are used for leading cold water to the inner core cavity through a water pump, the cold water is heated under the action of a semiconductor chip and then generates hot water at the output end of the semiconductor chip, the hot water is conveyed to the mattress through another pipeline, so that the temperature of the mattress can be raised, the other side of the mattress generates refrigeration according to the characteristics of the semiconductor chip, the outer circulation cavity arranged on the outer wall of the inner core cavity is used for dissipating at low temperature, if the refrigeration effect is required to be generated, the current can be changed through the control box, the structure is, however, the structure causes the heat exchange efficiency to be poor, and the invention is specially designed and created for the purpose.
SUMMERY OF THE UTILITY MODEL
In order to solve the prior art problems, the utility model provides an inner core cavity structure for semiconductor temperature control bed, can improve more than not enough.
The utility model relates to an inner core cavity structure for a semiconductor temperature control bed, which comprises an inner core cavity main body, wherein the inner core cavity main body is columnar or strip-shaped, is non-lamellar and is provided with three or more side surfaces; a plurality of water guide channels are arranged in the inner core cavity main body, and the length of each water guide channel is equal to or greater than that of the inner core cavity main body; the water guide pore canal is provided with a plurality of water guide pore canals to form a honeycomb structure, the inner wall of each water guide pore canal is provided with a secondary pore canal, and the secondary pore canal is designed to increase a heat exchange surface at present; the side surface of the inner core cavity body is provided with an installation table convenient for fixing a semiconductor, and the outer surface of the inner core cavity body is provided with a zinc plating layer, a zinc dipping layer or a hydrophilic coating layer to enhance the corrosion resistance and the hydrophilic performance.
Furthermore, the inner core cavity is columnar or strip-shaped.
Further, the opening of the secondary duct is located adjacent to the inner wall of the water guiding duct when viewed in a cross section of the water guiding duct.
Further, the opening position of the secondary duct is higher than the inner wall of the water guide duct when viewed from the cross section of the water guide duct.
Furthermore, the water guide pore canal is designed in a spiral manner or a straight line manner.
Furthermore, the inner wall of the water guide pore channel is provided with an anti-rust layer which is sprayed with anti-rust paint or polytetrafluoroethylene.
Further, the section of the inner core cavity main body is triangular, rectangular or trapezoidal.
Further, the inner core cavity body is provided with a mounting hole.
Further, the length of the inner core cavity main body is less than 35 cm.
The utility model discloses improve the novelty, improved the structure in inner core chamber, adopted column or banding form, formed cellular structure, increased the installation face of semiconductor piece, it is better to the refrigeration of control by temperature change bed heat transfer case or the efficiency of heating like this, can increase the COP value.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a schematic structural diagram of a water guide channel.
Fig. 3 is another structure diagram of the water guide channel.
Fig. 4 is a schematic view of the present invention.
The figure is as follows: the structure comprises a water guide pore channel 1, a round corner edge 2, a semiconductor mounting table 3, a mounting hole 4, a first secondary hole 5, a second secondary hole 6, an anti-rust layer 7, an inner core cavity main body 8, an outer circulation box 9 and a semiconductor refrigerating sheet 10.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1, the utility model relates to an inner core cavity structure for a semiconductor temperature control bed, which comprises an inner core cavity main body, wherein the inner core cavity main body is columnar or strip-shaped, is non-lamellar and has three or more sides; a plurality of water guide channels 1 are arranged in the inner core cavity main body, and the length of each water guide channel is equal to or greater than that of the inner core cavity main body; the water guide pore canal is provided with a plurality of water guide pore canals to form a honeycomb structure, the inner wall of the water guide pore canal 1 is provided with a secondary pore canal, and the secondary pore canal is designed to increase a heat exchange surface at present; the side surface of the inner core cavity body is provided with an installation table convenient for fixing a semiconductor, and the outer surface of the inner core cavity body is provided with a zinc plating layer, a zinc dipping layer or a hydrophilic coating layer to enhance the corrosion resistance and the hydrophilic performance.
As shown in fig. 2, a first kind of secondary holes 5 are formed in a cross section of the water conducting tunnel 1 in which the secondary tunnel opening is located adjacent to the inner wall of the water conducting tunnel 1.
As for the design of the secondary holes, as shown in fig. 3, on the cross section of the water guide duct 1, where the opening position of the secondary duct is higher than the inner wall of the water guide duct, there are fine ribs to form the first type of secondary holes 6.
The water guide channel 1 is designed spirally or linearly.
The inner wall of the water guide pore channel 1 is provided with an anti-rust layer 7 which is sprayed with anti-rust paint or polytetrafluoroethylene.
The section of the inner core cavity main body is triangular, rectangular or trapezoidal, and the design of the gas structure is determined according to actual requirements.
The inner core cavity body is provided with a mounting hole 4.
The length of the inner core cavity main body is less than 35 cm.
As shown in fig. 4, a semiconductor refrigeration chip 9 and an external circulation box 9 are installed on a semiconductor mounting platform of an inner core cavity body 8, and a pore channel for flowing water is arranged in the external circulation box, so that a simple heat exchange box is formed, wherein a triangular inner core is used as an internal circulation, the outer side of the triangular inner core is used as an external circulation, the internal circulation heats through one side of the semiconductor chip, the external circulation is used for refrigerating the outer side of the semiconductor chip, the external circulation is used for dissipating low temperature, the low temperature is dissipated by entering water from a water inlet port, then the heat exchange is fully performed through a bent water guide hole, and the heat is discharged from a water outlet port, so that the low temperature dissipation is realized, when the semiconductor chip changes the cold and hot directions, the. Due to the improvement of the scheme, the inner core cavity main body is designed into a non-sheet shape, the mounting surface of the semiconductor wafer can be increased, and the heat exchange rate of water can be increased when the water passes through the water guide pore channel.
Claims (9)
1. The utility model provides an inner core cavity structure for semiconductor temperature controlled bed which characterized in that: the inner core cavity body is non-sheet-shaped; the water guide structure comprises three or more side surfaces, a plurality of water guide channels are arranged in an inner core cavity main body to form a honeycomb structure, and the length of each water guide channel is equal to or greater than that of the inner core cavity main body; the inner wall of the water guide pore canal is provided with a secondary pore canal; and the side surface of the inner core cavity body is provided with an installation platform convenient for semiconductor fixing.
2. The core cavity structure for the semiconductor temperature controlled bed according to claim 1, wherein: the inner core cavity is columnar or strip-shaped.
3. The core cavity structure for the semiconductor temperature controlled bed according to claim 1, wherein: and the opening of the secondary duct is positioned adjacent to the inner wall of the water guide duct when the water guide duct is seen from the cross section of the water guide duct.
4. The core cavity structure for the semiconductor temperature controlled bed according to claim 1, wherein: the opening of the secondary duct is higher than the inner wall of the water guide duct when viewed from the cross section of the water guide duct.
5. The core cavity structure for the semiconductor temperature controlled bed according to claim 1, wherein: the water guide pore canal is designed in a spiral manner or a straight line manner.
6. The core cavity structure for the semiconductor temperature controlled bed according to claim 1, wherein: and an anti-rust layer is arranged on the inner wall of the water guide pore channel.
7. The core cavity structure for the semiconductor temperature controlled bed according to claim 1, wherein: the section of the inner core cavity main body is triangular, rectangular or trapezoidal.
8. The core cavity structure for the semiconductor temperature controlled bed according to claim 1, wherein: and the inner core cavity body is provided with a mounting hole.
9. The core cavity structure for the semiconductor temperature controlled bed according to claim 1, wherein: the length of the inner core cavity main body is less than 35 cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020673319.1U CN212489261U (en) | 2020-04-28 | 2020-04-28 | Inner core cavity structure for semiconductor temperature control bed |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020673319.1U CN212489261U (en) | 2020-04-28 | 2020-04-28 | Inner core cavity structure for semiconductor temperature control bed |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212489261U true CN212489261U (en) | 2021-02-09 |
Family
ID=74434796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020673319.1U Active CN212489261U (en) | 2020-04-28 | 2020-04-28 | Inner core cavity structure for semiconductor temperature control bed |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212489261U (en) |
-
2020
- 2020-04-28 CN CN202020673319.1U patent/CN212489261U/en active Active
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