CN212404275U - Gas distribution device of plasma enhanced atomic layer deposition equipment for optical thin film - Google Patents
Gas distribution device of plasma enhanced atomic layer deposition equipment for optical thin film Download PDFInfo
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- CN212404275U CN212404275U CN202021590679.1U CN202021590679U CN212404275U CN 212404275 U CN212404275 U CN 212404275U CN 202021590679 U CN202021590679 U CN 202021590679U CN 212404275 U CN212404275 U CN 212404275U
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Abstract
The utility model belongs to the technical field of the film preparation technique and specifically relates to a plasma reinforcing atomic layer deposition equipment's gas distribution device for optical film, its characterized in that: the gas distribution device comprises a source gas distribution pipe and a gas distribution mechanism, wherein the source gas distribution pipe is provided with gas outlet holes, and the gas distribution mechanism is positioned on a gas outlet path of the gas outlet holes arranged on the source gas distribution pipe. The utility model has the advantages that: 1) the film layers of various types and different materials in the single plasma enhanced atomic layer deposition cavity can be produced simultaneously; 2) the uniform distribution of air flow in the process cavity can be realized, and the rapid purging and switching of different source gases can be quickly realized; 3) the uniformity of a workpiece film layer and the optical constant of the film layer can be quickly adjusted; 4) simple structure is reasonable, is convenient for install and later maintenance, is suitable for the popularization.
Description
Technical Field
The utility model belongs to the technical field of the film preparation technique and specifically relates to a gas distribution device of plasma reinforcing atomic layer deposition equipment for optical film.
Background
For conventional atomic layer deposition equipment, it is often only used to prepare simple monolayer films, such as SiO2Or Al2O3A single plating layer. Therefore, in the process chamber of the atomic layer deposition equipment, only a gas distribution system related to a simple single film layer is provided. The optical film usually comprises two or more film layers, so that the requirement on an air distribution system which directly influences the film forming effect is obviously improved; for example, the optical film has high requirements on optical constant refractive index, absorptivity, thickness uniformity and the like; the gas distribution system of the conventional atomic layer deposition equipment cannot meet the production requirement of the optical film.
Disclosure of Invention
The utility model aims at providing a plasma reinforcing atomic layer deposition equipment's gas distribution device for optical film is not enough according to above-mentioned prior art, can realize the even deposit of the multilayer optical film of individual layer or different materials through arranging device or the structure that the multichannel can realize the samming on the circulation route of the gas source in the equipment.
The utility model discloses the purpose is realized accomplishing by following technical scheme:
the utility model provides a gas distribution device of plasma enhanced atomic layer deposition equipment for optical film, sets up on plasma enhanced atomic layer deposition equipment, plasma enhanced atomic layer deposition equipment includes plasma cavity and process cavity, just the plasma cavity with the process cavity is linked together its characterized in that: the gas distribution device comprises a source gas distribution pipe and a gas distribution mechanism, wherein the source gas distribution pipe is provided with gas outlet holes, and the gas distribution mechanism is positioned on a gas outlet path of the gas outlet holes arranged on the source gas distribution pipe.
The air dispersing mechanism is positioned right opposite to the air outlet on the source air distribution pipe, namely the air outlet is right opposite to the air dispersing mechanism.
The source gas distribution pipe and the gas dispersing mechanism are arranged in the process cavity and close to the plasma cavity.
Preferably, the air outlets are arranged on the source air distribution pipe in a linear array manner, and the aperture size of the air outlets and the gaps among the air outlets can be adjusted during manufacturing according to different process parameters.
The gas distribution device comprises a plasma gas inlet plate which is arranged in the plasma cavity and close to the gas inlet of the plasma cavity, and gas inlet plate holes which are uniformly distributed are formed in the plasma gas inlet plate.
Preferably, the air inlet plate holes are arranged on the plasma air inlet plate in an area array manner, and the aperture size of the air inlet plate holes can be adjusted during manufacturing according to different process parameters.
The gas distribution device comprises a plasma gas homogenizing plate arranged between the plasma cavity and the process cavity, and gas outlet holes of the plasma gas homogenizing plate are uniformly formed in the plasma gas homogenizing plate.
Preferably, the gas outlet holes of the plasma gas homogenizing plate are arranged on the plasma gas homogenizing plate in an area array manner, and the aperture size of the gas outlet holes of the plasma gas homogenizing plate can be adjusted during manufacturing according to different process parameters.
The plasma gas homogenizing plate and the source gas distribution pipe are arranged in parallel array.
The gas distribution device comprises a gas pumping port gas homogenizing plate which is arranged in the process cavity and close to the gas pumping port of the process cavity, and gas pumping port gas homogenizing plate gas outlet holes which are uniformly distributed are formed in the gas pumping port gas homogenizing plate.
Preferably, the air outlet holes of the air outlet equalizing plate are arranged on the air outlet equalizing plate in an area array manner, and the aperture size of the air outlet holes of the air outlet equalizing plate can be adjusted during manufacturing according to different process parameters.
The plasma processing device comprises a plasma cavity, a process cavity, a plurality of source gas distribution pipes and a gas source, wherein the process cavity is internally provided with a workpiece frame, the plurality of source gas distribution pipes are arranged between the plasma cavity and the workpiece frame in an array mode, and the source gas distribution pipes respectively and independently correspond to the gas source.
The air outlets arranged on the source air distribution pipe are uniformly arranged.
The gas distribution device comprises a plasma gas homogenizing plate arranged between the plasma cavity and the process cavity, and gas outlet holes of the plasma gas homogenizing plate are uniformly formed in the plasma gas homogenizing plate.
Preferably, the gas outlet holes of the plasma gas homogenizing plate are arranged on the plasma gas homogenizing plate in an area array manner, and the aperture size of the gas outlet holes of the plasma gas homogenizing plate can be independently adjusted.
The plasma gas homogenizing plate and the source gas distribution pipe are arranged in parallel array.
The arrangement state of the pipe bodies of the source gas distribution pipe and the gas dispersing mechanism meets the requirement that the gas outlet holes formed in the pipe bodies are matched with the stacking positions of workpieces loaded in the plasma enhanced atomic layer deposition equipment and form corresponding structures.
The utility model has the advantages that: 1) the film layers of various types and different materials in the single plasma enhanced atomic layer deposition cavity can be produced simultaneously; 2) the uniform distribution of air flow in the process cavity can be realized, and the rapid purging and switching of different source gases can be quickly realized; 3) the uniformity of a workpiece film layer and the optical constant of the film layer can be quickly adjusted; 4) simple structure is reasonable, is convenient for install and later maintenance, is suitable for the popularization.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Detailed Description
The features of the present invention and other related features are described in further detail below by way of example in conjunction with the accompanying drawings to facilitate understanding by those skilled in the art:
as shown in fig. 1, the symbols 1-16 in the figure are respectively represented as: the plasma component comprises an outer vacuum cavity 1, a process cavity 2, a workpiece 3, a plasma component quartz cavity 4, a plasma component copper tube coil 5, a plasma component air inlet 6, a plasma gas homogenizing plate 7, a plasma gas homogenizing plate air outlet hole 8, a source air distribution pipe 9, an air dispersion pipe 10, a workpiece rotating frame 11, an air pumping port gas homogenizing plate 12, an air pumping port gas homogenizing plate air outlet hole 13, an air pumping port 14, a plasma air inlet plate 15 and an air inlet plate hole 16.
Example (b): the gas distribution device of the plasma enhanced atomic layer deposition device for the optical thin film in the embodiment is arranged on the plasma enhanced atomic layer deposition device, and can be used for depositing a single-layer or multi-layer optical thin film made of different materials.
As shown in fig. 1, the main body of the plasma enhanced atomic layer deposition apparatus in this embodiment includes an outer vacuum chamber 1, a process chamber 2, and a plasma component quartz chamber 4 as a plasma chamber.
Wherein, one end of the plasma component quartz cavity 4 is provided with a plasma component gas inlet 6, and plasma related source gas in the plasma enhanced atomic layer deposition film forming process enters the inside of the plasma component quartz cavity 4 through the plasma component gas inlet 6. Plasma assembly steel tube coils 5 arranged in an array are arranged around the plasma assembly quartz cavity 4, and plasma is generated under the action of a radio frequency power supply loaded on the plasma assembly steel tube coils 5, so that plasma related source gas in the plasma assembly quartz cavity 4 is activated or excited.
The process chamber 2 is connected with the plasma assembly quartz chamber 4 and the interior of the process chamber is communicated, so that the plasma related source gas activated or excited by the plasma assembly quartz chamber 4 can be introduced into the process chamber 2. The process chamber 2 is a film forming space of the workpiece 3, a rotatable workpiece rotating frame 11 is arranged in the process chamber, and the workpiece 3 is loaded on the workpiece rotating frame 11 and rotates along with the workpiece rotating frame 11, so that the film forming uniformity of the workpiece is improved. The other end of the process chamber 2 is a pumping port 14, and the pumping port 14 is used for exhausting redundant gas atoms and molecules.
The outer vacuum cavity 1 is arranged at the periphery of the process cavity 2, and the inner part of the outer vacuum cavity is vacuum so as to further provide a vacuum environment required by the plasma enhanced atomic layer deposition film forming process for the process cavity 2.
As shown in fig. 1, the gas distribution device in this embodiment includes a plasma gas inlet plate 15, a plasma gas homogenizing plate 7, a source gas distribution pipe 9, a gas diffusion pipe 10, and a gas extraction opening gas homogenizing plate 12, which are sequentially arranged from a plasma module gas inlet 6 to a gas extraction opening 14, and by the arrangement of these devices or structures, uniformity can be ensured on the whole gas flow path, and the requirements of a plasma enhanced atomic layer deposition film formation process can be met, so as to improve the film formation quality.
The plasma inlet plate 15 is arranged inside the plasma assembly quartz cavity 4 and is closely attached to the position of the plasma assembly inlet 6, and the outer contour shape and size of the plasma inlet plate 15 are matched with the inner contour shape and size of the plasma assembly quartz cavity 4, namely, the plasma related source gas entering the plasma assembly quartz cavity 4 through the plasma assembly inlet 6 is ensured to completely pass through the plasma inlet plate 15. The area array type gas inlet plate holes 16 are formed in the plasma gas inlet plate 15, and plasma related source gases can be uniformly distributed in the quartz cavity 4 of the plasma component under the action of the gas inlet plate holes 16, so that the efficiency and the quality of subsequent plasma activation or excitation on the plasma related source gases are facilitated.
The plasma gas homogenizing plate 7 is arranged at the connecting position between the process cavity 2 and the plasma component quartz cavity 4, and the surface of the plasma gas homogenizing plate is provided with an area array type plasma gas homogenizing plate gas outlet hole 8, so that gas output externally by the plasma component quartz cavity 4 is uniform. The area of the plasma gas homogenizing plate gas outlet hole 8 arranged on the plasma gas homogenizing plate 7 meets the requirement of covering the gas outlet area of the quartz cavity 4 of the plasma component, which is output outwards, so that the relevant source gas output outwards by the quartz cavity 4 of the plasma component can be ensured to enter the inside of the process cavity 2 through the plasma gas homogenizing plate 7.
The source gas distribution pipe 9 is arranged between the process chamber 2 and the quartz chamber 4 of the plasma assembly, specifically between the plasma gas homogenizing plate 7 and the workpiece rotating frame 11 as shown in fig. 1. The number of the source gas distribution pipes 9 can be designed according to the number of the sources involved in the plasma enhanced atomic layer deposition process, that is, when various types of films made of different materials are prepared, a plurality of source gas distribution pipes 9 corresponding to the number of the sources used in the films can be arranged. The plurality of source gas distribution pipes 9 can be arranged between the process cavity 2 and the quartz cavity 4 of the plasma component in an array manner, and each source gas distribution pipe 9 corresponds to one type of source. The source gas distribution pipe 9 is provided with gas outlets arranged in a line array, and the gas outlets face the workpiece rotating frame 11, so that the source gas entering the process chamber 2 through the gas outlets can flow to the workpiece 3. A gas diffusion pipe 10 as a gas diffusion mechanism is disposed behind the source gas distribution pipe 9 in the gas distribution direction, i.e., on the gas outlet path of the gas outlet, and the gas diffusion pipe 10 can distribute the source gas, thereby ensuring that the source gas input through the source gas distribution pipe 9 is uniformly distributed.
The gas extraction opening gas homogenizing plate 12 is arranged inside the process cavity 2 and located between the workpiece rotating frame 11 and the extracted gas 14, and the surface of the gas extraction opening gas homogenizing plate is provided with area array type gas outlet holes 13 so as to adjust the flow direction and the uniform distribution of the gas in the process cavity 2.
When the method is used, the method comprises the following process flows:
plasma related source gas enters the plasma inlet plate 15 and the front of the plasma component gas inlet 6, then is uniformly dispersed into the quartz cavity 4 of the plasma component through the gas inlet plate hole 16, plasma is generated under the action of a radio frequency power supply loaded on the copper coil 5 of the plasma component, and activated or excited gas enters the process cavity 2 through the gas outlet hole 8 of the plasma gas homogenizing plate on the plasma gas homogenizing plate 7. After the gas atoms are deposited on the workpiece 3, the residual gas enters the pumping hole 14 through the pumping hole gas-homogenizing plate gas outlet hole 13 on the pumping hole gas-homogenizing plate 12 and is discharged out of the process cavity 2.
Meanwhile, the source-related heating gas entering from the source gas distribution pipe 9 enters the process chamber 2 through the gas diffusion pipe 10, and after single atom or molecule adsorption is performed on the surface of the workpiece, redundant gas atoms or molecules enter the gas extraction port 14 through the gas outlet hole 13 of the gas extraction port gas homogenizing plate 12.
In the embodiment, in specific implementation: the arrangement state of the tube bodies of the source air distribution tube 9 and the air dispersion tube 10 meets the requirement that the arranged air outlet holes are matched with the stacking position of the workpiece 3 and form corresponding. Specifically, in the practical use of the plasma-enhanced atomic layer deposition apparatus, the workpieces 3 generally have two states of being stacked horizontally (as shown in fig. 1) or stacked vertically; when a plurality of workpieces 3 are loaded on the workpiece rotating frame 11 in a horizontal stacking manner as shown in fig. 1, a certain gap is formed between the workpieces 3 in the height direction, at this time, the pipe-shaped source gas distribution pipe 9 and the gas dispersion pipe 10 are both vertically arranged in the process cavity 2, and the gas outlets on the source gas distribution pipe 9 are respectively in one-to-one correspondence with the workpieces 3, so that each workpiece 3 is ensured to be correspondingly provided with a gas outlet; when the workpieces 3 are vertically stacked, a certain gap is formed between the workpieces 3 in the horizontal direction, at the moment, the source gas distribution pipe 9 and the gas diffusion pipe 10 are horizontally arranged in the process cavity 2, and each workpiece 3 is correspondingly provided with a gas outlet. In general, when a plurality of workpieces 3 are loaded in the plasma enhanced atomic layer deposition device for film formation, it is preferable to ensure that each workpiece 3 has a corresponding gas outlet hole, so as to improve the film formation quality.
The gas diffusion pipe 10 is located right opposite to the gas outlet holes on the source gas distribution pipe 9, i.e. the gas outlet holes are right opposite to the gas diffusion pipe 10, so as to ensure that the source gas input through the source gas distribution pipe 9 can vertically flow to the gas diffusion pipe 10 and uniformly flow in the process cavity 2 under the shunting action of the gas diffusion pipe 10.
The aperture sizes of the area array holes formed in the plasma air inlet plate 15, the plasma gas homogenizing plate 7 and the air pumping hole gas homogenizing plate 12 can be independently adjusted in manufacturing according to different processes, so that the uniformity of gas flowing is further improved. Meanwhile, the aperture of the linear array air outlets arranged on the source air distribution pipe 9 and the gaps among the air outlets can be adjusted to realize the adjustment of air flow and air pressure in the process cavity 2, and further local adjustment can be carried out according to the film uniformity or optical characteristics required by the workpiece 3, so that the product quality is improved.
Besides the air diffusing pipe 10 for realizing the flow dividing function in the present embodiment, other mechanisms for realizing the flow dividing function, such as an air diffusing plate, may be adopted.
The multiple source gas distribution pipes 9 and the plasma gas homogenizing plate 7 are in parallel arrays to further improve the uniformity of the gas.
Although the conception and the embodiments of the present invention have been described in detail with reference to the drawings, those skilled in the art will recognize that various changes and modifications can be made therein without departing from the scope of the appended claims, and therefore, the description thereof is not repeated herein.
Claims (10)
1. The utility model provides a gas distribution device of plasma enhanced atomic layer deposition equipment for optical film, sets up on plasma enhanced atomic layer deposition equipment, plasma enhanced atomic layer deposition equipment includes plasma cavity and process cavity, just the plasma cavity with the process cavity is linked together its characterized in that: the gas distribution device comprises a source gas distribution pipe and a gas distribution mechanism, wherein the source gas distribution pipe is provided with gas outlet holes, and the gas distribution mechanism is positioned on a gas outlet path of the gas outlet holes arranged on the source gas distribution pipe.
2. The gas distribution device of a plasma enhanced atomic layer deposition apparatus for optical thin films according to claim 1, wherein: the air dispersing mechanism is positioned right opposite to the air outlet on the source air distribution pipe, namely the air outlet is right opposite to the air dispersing mechanism.
3. The gas distribution device of a plasma enhanced atomic layer deposition apparatus for optical thin films according to claim 1, wherein: the source gas distribution pipe and the gas dispersing mechanism are arranged in the process cavity and close to the plasma cavity.
4. The gas distribution device of a plasma enhanced atomic layer deposition apparatus for optical thin films according to claim 1, wherein: the gas distribution device comprises a plasma gas inlet plate which is arranged in the plasma cavity and close to the gas inlet of the plasma cavity, and gas inlet plate holes which are uniformly distributed are formed in the plasma gas inlet plate.
5. The gas distribution device of a plasma enhanced atomic layer deposition apparatus for optical thin films according to claim 1, wherein: the gas distribution device comprises a plasma gas homogenizing plate arranged between the plasma cavity and the process cavity, and gas outlet holes of the plasma gas homogenizing plate are uniformly formed in the plasma gas homogenizing plate.
6. The gas distribution device of a plasma enhanced atomic layer deposition apparatus for optical thin films according to claim 5, wherein: the plasma gas homogenizing plate and the source gas distribution pipe are arranged in parallel array.
7. The gas distribution device of a plasma enhanced atomic layer deposition apparatus for optical thin films according to claim 1, wherein: the gas distribution device comprises a gas pumping port gas homogenizing plate which is arranged in the process cavity and close to the gas pumping port of the process cavity, and gas pumping port gas homogenizing plate gas outlet holes which are uniformly distributed are formed in the gas pumping port gas homogenizing plate.
8. The gas distribution device of a plasma enhanced atomic layer deposition apparatus for optical thin films according to claim 1, wherein: the plasma processing device comprises a plasma cavity, a process cavity, a plurality of source gas distribution pipes and a gas source, wherein the process cavity is internally provided with a workpiece frame, the plurality of source gas distribution pipes are arranged between the plasma cavity and the workpiece frame in an array mode, and the source gas distribution pipes respectively and independently correspond to the gas source.
9. The gas distribution device of a plasma enhanced atomic layer deposition apparatus for optical thin films according to claim 1, wherein: the air outlets arranged on the source air distribution pipe are uniformly arranged.
10. The gas distribution device of a plasma enhanced atomic layer deposition apparatus for optical thin films according to claim 1, wherein: the arrangement state of the pipe bodies of the source gas distribution pipe and the gas dispersing mechanism meets the requirement that the gas outlet holes formed in the pipe bodies are matched with the stacking positions of workpieces loaded in the plasma enhanced atomic layer deposition equipment and form corresponding structures.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021590679.1U CN212404275U (en) | 2020-08-04 | 2020-08-04 | Gas distribution device of plasma enhanced atomic layer deposition equipment for optical thin film |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202021590679.1U CN212404275U (en) | 2020-08-04 | 2020-08-04 | Gas distribution device of plasma enhanced atomic layer deposition equipment for optical thin film |
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| CN212404275U true CN212404275U (en) | 2021-01-26 |
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| CN202021590679.1U Active CN212404275U (en) | 2020-08-04 | 2020-08-04 | Gas distribution device of plasma enhanced atomic layer deposition equipment for optical thin film |
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