CN208250415U - A kind of thin film deposition system - Google Patents
A kind of thin film deposition system Download PDFInfo
- Publication number
- CN208250415U CN208250415U CN201820654039.9U CN201820654039U CN208250415U CN 208250415 U CN208250415 U CN 208250415U CN 201820654039 U CN201820654039 U CN 201820654039U CN 208250415 U CN208250415 U CN 208250415U
- Authority
- CN
- China
- Prior art keywords
- conduit
- film deposition
- mould group
- gas
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000427 thin-film deposition Methods 0.000 title claims abstract description 59
- 239000010408 film Substances 0.000 claims abstract description 205
- 239000000758 substrate Substances 0.000 claims abstract description 111
- 238000000151 deposition Methods 0.000 claims abstract description 97
- 230000008021 deposition Effects 0.000 claims abstract description 79
- 239000007789 gas Substances 0.000 claims description 242
- 239000011261 inert gas Substances 0.000 claims description 92
- 238000006243 chemical reaction Methods 0.000 claims description 24
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 68
- 238000000034 method Methods 0.000 description 10
- 239000010409 thin film Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 229940073561 hexamethyldisiloxane Drugs 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The utility model provides a kind of thin film deposition system, the thin film deposition system on substrate for depositing plural layers, the thin film deposition system includes the first film deposition mould group being disposed adjacent and the second film deposition mould group, and the first film deposition mould group forms the first film layer for output gas on substrate；The second film deposition mould group forms the second film layer for output gas on substrate；Substrate can be deposited to the substrate transport mould group of mould group and the deposition mould group movement of the second film relative to the first film, the substrate transport mould group is used to substrate depositing mould group to second film deposition mould group movement, to form the first film layer and the second film layer that are stacked on the substrate from the first film.Thin film deposition system provided by the utility model can quickly form stratified film.
Description
Technical field
The utility model relates to technical field of thin film deposition, and in particular to a kind of thin film deposition system.
Background technique
There are two ways to main inoranic membrane deposits in current thin film packaging technology process, one is plasma enhancings
Chemical vapor deposition refers to plasma activated reactive gas, promotes to carry out chemistry in matrix surface or near surface space anti-
It answers, generates the technology of solid film.By the method for generating plasma, it is divided into radio frequency plasma, direct-current plasma and microwave
Plasma activated chemical vapour deposition etc..Another kind is atomic layer deposition method, is that one kind can be by substance with monatomic form membrane one
The method for being plated in substrate surface of one layer of layer.Atomic layer deposition and common chemical deposition have similarity.But in atomic layer deposition
During product, the chemical reaction of new one layer of atomic film is that directly preceding layer is associated therewith, and this mode makes each reaction only
Deposit one layer of atom.But the film layer of the formation of plasma enhanced chemical vapor deposition method is not fine and close, and the uniformity is inadequate, and
The speed that atomic layer deposition method forms film layer is very slow.
Utility model content
In view of this, the present invention provides the thin film deposition system that one kind can quickly form stratified film, specific skills
Art scheme is as described below.
A kind of thin film deposition system, for the thin film deposition system for depositing plural layers on substrate, the film is heavy
Product system include:
The first film deposition mould group and the second film deposition mould group being disposed adjacent, the first film deposition mould group are used for
Output gas and the first film layer is formed on substrate；
The second film deposition mould group forms the second film layer for output gas on substrate；
Substrate can be deposited to the substrate transport mould group of mould group and the deposition mould group movement of the second film relative to the first film, it is described
Substrate transport mould group is used to substrate depositing mould group to second film deposition mould group movement, in institute from the first film
State the first film layer and the second film layer for being formed and being stacked on substrate.
Preferably, when the substrate is located within the scope of the first film deposition mould group, it is located at second film and deposits
Except mould group range.
Preferably, when the part substrate is located within the scope of the first film deposition mould group, substrate described in another part is located at
Within the scope of the second film deposition mould group.
Preferably, the first film depositing system includes the first conduit and the second conduit, and first conduit is for defeated
First plasma gas out, second conduit is for exporting the second plasma gas.
Preferably, second thin film deposition system includes third conduit and the 4th conduit, and the third conduit is for defeated
Third plasma gas out, the 4th conduit is for exporting the 4th plasma gas.
Preferably, the thin film deposition system further includes the first plasma gas source, the second plasma gas source, third etc.
Gas ions gas source and the 4th plasma gas source, the first plasma gas source are used to provide the described the first plasma gas
Body, and the first plasma gas source is connected to first conduit；The second plasma gas source is used to provide the described
Second plasma gas, and the second plasma gas source is connected to second conduit；The third plasma gas
Source is used to provide the described third plasma gas, and the third plasma gas source is connected to the third conduit；It is described
4th plasma gas source is used to provide the described the 4th plasma gas, and the 4th plasma gas source and the described 4th
Conduit connection.
Preferably, the first film depositing system includes the first conduit for exporting the first plasma gas and is used for
Output gas type is different from the second conduit of the second plasma gas of the first plasma gas.
Preferably, the first film deposition mould group further includes leading for exporting the first inert gas of the first inert gas
Pipe, the first inert gas conduit is between first conduit and second conduit.
Preferably, first conduit is compared to second conduit far from second film deposition mould group setting, institute
Stating the first film deposition mould group further includes the second inert gas conduit, and the second inert gas conduit is located at first conduit
Side far from second conduit is either located at the second conduit far from the first conduit side, the second inert gas conduit
For exporting the second inert gas.
Preferably, the first film depositing system further includes second for generating the second inert gas of cleaning substrate
Inert gas conduit, and the first inert gas for generating the first plasma gas of isolation and the second plasma gas the
One inert gas conduit.
Preferably, the first film deposition mould group further includes the first reaction chamber, and first conduit and described second is led
Pipe is located in first reaction chamber；The thin film deposition system further includes vacuum evacuation device, and the vacuum evacuation device is used for will
First reaction chamber vacuumizes.
Preferably, the vacuum evacuation device vacuumizes conduit including first, and described first, which vacuumizes conduit, is arranged described
Between first conduit and second conduit.
Preferably, first conduit includes first gas outlet, and second conduit includes second gas outlet, described
The cross section and the substrate-parallel of first gas outlet and second gas outlet are arranged.
Preferably, the substrate transport mould group is also used to the substrate depositing mould group to described the from second film
It is mobile that one film deposits mould group.
Preferably, first conduit and second conduit are 1-10mm at a distance from the substrate respectively.
The utility model has the beneficial effects that thin film deposition system provided by the utility model can quickly form multilayer film
Layer.
Detailed description of the invention
In order to illustrate more clearly of the technical scheme in the embodiment of the utility model, will make below to required in embodiment
Attached drawing is briefly described, it should be apparent that, the drawings in the following description are merely some embodiments of the present invention,
For those of ordinary skill in the art, without any creative labor, it can also obtain according to these attached drawings
Obtain other attached drawings.
Fig. 1 provides a kind of structural schematic diagram of thin film deposition system for the utility model first embodiment.
Fig. 2 provides a kind of structural schematic diagram of thin film deposition system for the utility model second embodiment.
Fig. 3 is the first gas outlet and second of the first conduit in thin film deposition system provided by the embodiment of the utility model
The positional diagram of the second gas outlet and substrate of conduit.
Fig. 4 is that the gas in the first gas outlet of the first conduit provided by the utility model portals arrangement schematic diagram.
Specific embodiment
As described below is preferred embodiments of the present invention, it is noted that for the ordinary skill of the art
For personnel, without departing from the principle of this utility model, several improvements and modifications can also be made, these are improved and profit
Decorations are also considered as the protection scope of the utility model.
Referring to Fig. 1, the utility model first embodiment provides a kind of thin film deposition system 10, the thin film deposition system
10 for depositing plural layers on the substrate 300, and the thin film deposition system 10 includes the first film deposition mould being disposed adjacent
The 100, second film of group deposits mould group 200 and substrate 300 can be deposited mould with respect to the first film deposition mould group 100 and the second film
The mobile substrate transport mould group 400 of group 200.The first film deposition mould group 100, second film deposition mould group 200 and
The substrate transport mould group 400 is described in detail as follows.The first film deposit mould group 100 for output gas and on the substrate 300
The first film layer is formed, the second film deposition mould group 200 forms the second film layer for output gas on the substrate 300, substrate fortune
Defeated mould group 400, which is used to substrate 300 depositing mould group 100 from the first film, deposits the movement of mould group 200 to second film,
To form the first film layer and the second film layer that are stacked on the substrate 300.Substrate 300 is placed in the first film deposition mould
Behind the lower section of group 100, the first film layer is formed on the substrate 300, then substrate 300 is moved to second by substrate transport mould group 400
Film deposits the lower section of mould group 200, and the second film layer is formed in the first film layer.Thin film deposition system energy provided by the utility model
It is enough quickly to form stratified film.
In a further embodiment, when substrate 300 is located in the first film deposition 100 range of mould group, it is located at described the
Two films deposit except 200 range of mould group.That is, when that substrate 300 is moved fully to first is thin for substrate transport mould group 400
When film is deposited in 100 range of mould group, substrate 300 at this time is located at except the second film deposition 200 range of mould group, so that base
Plate 300 only forms the first film layer in the first film deposition mould group 100.It is understood that in the process of moving substrate 300
In, substrate transport mould group 400 can follow substrate 300 to move together, and can not also move.
In a further embodiment, when the part substrate 300 is located in the first film deposition 100 range of mould group, separately
A part of substrate 300 is located in second film deposition 200 range of mould group.That is, working as substrate transport mould group 400
When a part in substrate 300 is moved in the first film deposition 100 range of mould group, since the first film deposits mould group 100
It is disposed adjacent with the second film deposition mould group 200, at this point, being to be located at the second film to sink by the substrate 300 for having another part
In 200 range of product module group.
In a further embodiment, the first film deposition mould group 100 includes the first conduit 110 and the second conduit
120, first conduit 110 is for exporting the first plasma gas, and second conduit 120 is for exporting the second plasma
Body gas.First plasma gas and second plasma gas for forming the first film layer on the substrate 300.
First plasma gas and second plasma gas can obtain corresponding product by the way that chemical reaction occurs,
Corresponding product forms the first film layer on the substrate 300.It simultaneously include that can export two in the first film deposition mould group 100
The conduit of plasma gas, the first plasma gas and the second plasma gas are planted from the same mould group (the first film
Deposit mould group 100) in come out so that the contact between the first plasma gas and the second plasma gas is more evenly, energy
Enough form more uniform film layer.
In a further embodiment, the second film deposition mould group 200 includes third conduit 210 and the 4th conduit
220, the third conduit 210 is for exporting third plasma gas, and the 4th conduit 220 is for exporting the 4th plasma
Body gas.The third plasma gas and the 4th plasma gas for forming the second film layer on the substrate 300.
The third plasma gas and the 4th plasma gas can obtain corresponding product by the way that chemical reaction occurs,
Corresponding product forms the second film layer on the substrate 300.It is understood that the ingredient in first film layer and the second film layer
Can be identical or not identical, the thickness of first film layer and second film layer can be identical or not identical, can
The flow that plasma gas is exported in first conduit, the second conduit, the 4th conduit and the 4th conduit is adjusted as needed
Size also can according to need the type for adjusting the plasma gas of the output.Likewise, the third plasma gas
Body and the 4th plasma gas come out from the same mould group (the second film deposits mould group 200), so that third plasma
The contact of gas and the 4th plasma gas more evenly, is capable of forming more uniform film layer.
It is understood that the thin film deposition system 10 can also include that third film deposits mould group, the 4th film sinks
Product module group ... N thin film deposits mould group, wherein the N is the integer greater than 2.Film deposition mould group and described first thin
Film deposits mould group 100 or the structure of second film deposition mould group 200 is identical, including two output plasma gas
The conduit of body.Wherein the substrate 300 can also be moved to N thin film deposition mould group by the substrate transport mould group 400.Work as institute
When stating substrate 300 and forming a tunic layer below each film deposition mould group, the substrate transport mould group 400 is by the substrate
After 300 are moved to N thin film deposition mould group, then then forming N tunic layer on the substrate 300.Wherein each film is heavy
The ingredient that plasma gas in product module group is formed by film layer can be identical, can not also be identical, can be according to actual production
Need to adjust the uninterrupted and type of output plasma gas.
It is understood that first, second, in above-mentioned first conduit, the second conduit, third conduit and the 4th conduit
Three and the 4th is only limitted to distinguish the gas conduit of different positions.Same the first film deposition mould group and the second film deposit mould
First and second in group are only limitted to distinguish the film deposition mould group of different positions.
In a further embodiment, the substrate transport mould group 400 is also used to the substrate 300 is thin from described second
It is mobile to the first film deposition mould group 100 that film deposits mould group 200.The substrate transport mould group 400 can exist substrate 300
The first film deposition mould group 100 and the second film deposition mould group 200 move back and forth between the two, by the first film layer and the second film
Interlayer is every being stacked on the substrate 300.
It is understood that when the thin film deposition system 10 includes N thin film deposition mould group, that is to say, that including
N number of film deposits mould group.If substrate 300 is moved to N from the first film deposition mould group 100 by substrate transport mould group 400
Film deposit mould group, then again by substrate 300 from N thin film deposition mould group be moved to the first film deposition mould group 100, referred to as one
A reciprocating movement, and it is respectively formed film layer below each film deposition mould group, then a reciprocating movement is carried out, it can be in base
Plate 300 forms 2N tunic layer.N number of reciprocating movement is carried out, 2N can be formed in substrate 300NTunic layer.
It will also be appreciated that substrate 300 is moved to N thin film deposition mould group from the first film deposition mould group 100
In the process, it can according to need selection and form film layer below part film deposition mould group, mould can also be deposited in whole films
Group lower section forms film layer.It, can also be with when substrate 300 moves again to the first film deposition mould group 100 from N thin film deposition mould group
Selection forms film layer below part film deposition mould group, can also deposit in whole films and form film layer below mould group.Pass through
Control film deposits the switch of the gas conduit in mould group to realize whether form film layer on the substrate 300.
Thin film deposition system 10 forms stratified film by moving substrate 300, so thin film deposition system 10 can pass through
The output condition of each layer of plasma gas is designed, to form the composite film of extremely low stress.For example, the first film deposits
Mould group 100 forms the first film layer with tensile stress on the substrate 300, and the second film deposits the shape in the first film layer of mould group 200
At the second film layer with compression, mutually supported after the first film layer with tensile stress and the second film layer stacking with compression
Disappear, the stress between final composite film can be made to reduce.Steam infiltration can also effectively be extended by being formed by composite film
Path.
In a further embodiment, the thin film deposition system 10 further includes first plasma gas source 130, second etc.
Gas ions gas source 140, third plasma gas source 230 and the 4th plasma gas source 240.The first plasma gas source
130 are used to provide the described the first plasma gas, and the first plasma gas source 130 and first conduit 110 connect
It is logical.The second plasma gas source 140 is used to provide the described the second plasma gas, and the second plasma gas source
140 are connected to second conduit 120.The third plasma gas source 230 is used to provide the described third plasma gas,
And the third plasma gas source 230 is connected to the third conduit 210.The 4th plasma gas source 240 is for mentioning
For the 4th plasma gas, and the 4th plasma gas source 240 is connected to the 4th conduit 220.It can manage
Solution, the various plasma gas sources are the devices that can generate plasma gas.
In a further embodiment, the first film depositing system 100 includes for exporting the first plasma gas
The first conduit 110 and for output gas type be different from the first plasma gas the second plasma gas the second conduit
120.That is the first plasma gas is different from the type of the second plasma gas.It is understood that described
The plasma gas type provided in one plasma gas source 130 and the second plasma gas source 140 is different, for example,
First plasma gas is to include one of silicon, zirconium, titanium or a variety of plasma gas, second plasma
Body gas is nitrogen, hydrogen, oxygen, ammonia or the one such or a variety of plasma gas of nitric oxide.For example, institute
Stating the first plasma gas is trimethyl aluminium, and second plasma gas is oxygen, then formed on substrate the
One film layer is aluminum oxide film layer.
In a further embodiment, second thin film deposition system 200 includes for exporting third plasma gas
Third conduit 130 and for output gas type be different from third plasma gas the 4th plasma gas the 4th conduit
140.That is third plasma gas is different from the type of the 4th plasma gas.It is understood that described
The plasma gas provided in three plasma body gas source 230 and the 4th plasma gas source 240 is different, for example, described
Third plasma gas is to include one of silicon, zirconium, titanium or a variety of plasma gas, the 4th plasma gas
Body is nitrogen, hydrogen, oxygen, ammonia or the one such or a variety of plasma gas of nitric oxide.
It is understood that the first plasma gas of the first conduit output and the third plasma of third conduit output
The type of body gas is identical, and the 4th plasma of the second plasma gas of the second conduit output and the output of the 4th conduit
The type of gas is different.For example, first plasma gas is hexamethyldisiloxane (HMDSO, Hexamethyl
Disiloxane), second plasma gas is oxygen, and the third plasma gas is hexamethyldisiloxane, institute
Stating the 4th plasma gas is nitrogen, then the first film layer formed on substrate is membranous layer of silicon oxide, in the first film layer
The second film layer formed is silicon nitride film layer.
It is understood that the first conduit, the second conduit, third conduit and the plasma gas of the 4th conduit output can
Part is identical, all identical, or all not identical.It, can be by adjusting gas when four kinds of plasma gas are all identical
Conduit controls gas flow size or other reaction conditions, with the film layer that formation element is identical but product is different.
In a further embodiment, the first film deposition mould group 100 further includes for exporting the first inert gas
The first inert gas conduit 150, the first inert gas conduit 150 is located at first conduit 110 leads with described second
Between pipe 120.It is defeated from first conduit 110 for being isolated that the first inert gas conduit 150 exports the first inert gas
The first plasma gas out and the second plasma gas from second conduit 120 output, avoid the first plasma
Body gas and the second plasma gas, which just just contact with each other after coming out in gas conduit, to react, and guarantees the first plasma
Reaction forms the first film layer after body gas and the second plasma gas can be fallen on substrate surface.First inert gas
It can be, but not limited to as one of argon gas, helium, neon or multiple combinations.
In a further embodiment, first conduit 110 is thin far from described second compared to second conduit 120
Film deposits mould group 200 and is arranged, and the first film deposition mould group 100 further includes the second inert gas conduit 160, and described second is lazy
Property gas conduit 160 be located at side of first conduit 110 far from second conduit 120 or be located at the second conduit
120 far from 110 side of the first conduit, and the second inert gas conduit 160 is for exporting the second inert gas.When the second inertia
When gas conduit 160 is located at side of first conduit 110 far from second conduit 120, it is thin that substrate 300 is moved to first
When film deposits 100 lower section of mould group, the second inert gas that the substrate 300 is exported from the second inert gas conduit 160 first
Substrate surface is purged to clean its surface, avoids the first plasma gas and the second plasma gas on 300 surface of substrate
It is polluted when reaction film forming by other impurities, film forming is more evenly.Second inert gas can be, but not limited to for argon gas, helium,
One of neon or multiple combinations.Wherein the second inert gas conduit 160 is located at the second conduit 120 far from the first conduit 110
It when side, can be used for after reaction generates the first film layer cleaning film surface, be generated with removing the second film layer of interference
Impurity.
In a further embodiment, the first film depositing system 100 further includes for generating cleaning substrate 300
Second inert gas conduit 160 of the second inert gas, and for generating the first plasma gas of isolation and the second plasma
First inert gas conduit 150 of the first inert gas of gas.The first film depositing system 100 includes the first indifferent gas simultaneously
Body canal and the second inert gas conduit can reach cleaning substrate 300 and isolation the first plasma gas and second etc. simultaneously
The effect of plasma gas.
In a further embodiment, the second film deposition mould group 200 further includes 250 He of third inert gas conduit
4th inert gas conduit 260, the third inert gas conduit 250 are located at the third conduit 210 and the 4th conduit
Between 220, the third inert gas conduit 250 is for exporting third inert gas.The third inert gas is for being isolated
The third plasma gas and the 4th plasma gas.The third conduit 210 is compared to the 4th conduit
220, which close on the first film deposition mould group 100, is arranged, and the 4th inert gas conduit 260 is arranged in the third conduit
210 sides far from the 4th conduit 220, the 4th inert gas conduit 260 is for exporting the 4th inert gas.It is described
4th inert gas is for cleaning the substrate 300.
It is understood that N number of film is heavy when the thin film deposition system 10 includes N number of film deposition mould group
The Mold Making of the first film deposition mould group can be used in the production mold of product module group.Unlike, the gas conduit output
Gas can according to need selection.Likewise, inert gas conduit also can according to need the type of adjustment output inert gas.
Please refer to Fig. 2.The utility model second embodiment provides a kind of thin film deposition system 10, the thin film deposition system
The first film deposition mould group 100 in 10 further includes the 5th inert gas conduit 170, the 5th conduit 180 and the 6th inert gas
Conduit 190.5th conduit 180 between the 5th inert gas conduit 170 and the 6th inert gas conduit 190,
The 5th inert gas conduit 170 is between second conduit 120 and the 5th conduit 180.5th conduit
180 for exporting the 5th plasma gas, and the 5th conduit 180 connects the 5th plasma gas source 1110, and the described 5th
Plasma gas source 1110 is for providing the 5th plasma gas.The 5th inert gas conduit 170 is for exporting the 5th
Inert gas, the 6th inert gas conduit 190 is for exporting the 6th inert gas.The second film in this embodiment is heavy
The mold that product module group 200 is formed is identical as the mold that the first film deposition mould group 100 in the present embodiment is formed.
Second film deposition mould group 200 further includes that the 7th inert gas conduit 280, the 6th conduit 290 and the 8th are lazy
Property gas conduit 2100.6th conduit 290 is located at the 7th inert gas conduit 280 and the 8th inert gas conduit
Between 2100, the 7th inert gas conduit 280 is located at the 4th conduit 220 and the 8th inert gas conduit 2100
Between.6th conduit 290 connects the 6th plasma for exporting the 6th plasma gas, the 6th conduit 290
Gas source 2110, the 6th plasma gas source 2110 is for providing the 6th plasma gas.7th inert gas is led
Pipe 280 is for exporting the 7th inert gas, and the 8th inert gas conduit 2100 is for exporting the 8th inert gas.
When preparation forms film layer, the first conduit 110, the second conduit 120, the 5th conduit can be controlled according to production needs
180, the 6th conduit 290 and the first inert gas conduit 150, the second inert gas conduit 160, the 5th inert gas conduit
170, the stream of the 6th inert gas conduit 190, the 7th inert gas conduit 280 and the gas in the 8th inert gas conduit 2100
Measure the switch of size or output gas.
It is exemplified below, the first film is deposited to the 5th inert gas conduit 170, the 5th conduit in mould group 100
180, the 6th inert gas conduit 190 and the 7th inert gas conduit 280, the 6th conduit in the second film deposition mould group 200
290, the 8th inert gas conduit 2100 is closed, the conducting of other conduits.Any gas is not exported forming thin-film process, then this
When the second embodiment it is similar to first embodiment when the film is formed, unlike need to increase the mobile distance of substrate 300,
Wherein the increased distance of institute is equal with the distance between the 6th inert gas conduit 190 with the 5th inert gas conduit 170.
The first inert gas conduit 160, the first conduit the 110, the 6th that the first film can also be deposited in mould group 100 are lazy
Property gas conduit 190 and the second film deposition mould group 200 in third inert gas conduit 260, third conduit the 210, the 8th it is lazy
Property gas conduit 2100 close, other conduits conducting.Substrate 100 is moved under the tracheae of other conductings, to form multi-layer thin
Film.
Or simultaneously by three conduits, four inert gas conduits and the second film in the first film deposition mould group 100
Deposition mould group 200 in three conduits, four inert gas conduits all turn on, be formed in same film layer there are two types of or two
Kind or more material composition film layer.
Referring to Fig. 1, in a further embodiment, the first film deposition mould group 100 further includes first anti-
Chamber 1100 is answered, first conduit 110 and second conduit 120 are located in first reaction chamber 1100.Described second is thin
Film deposition mould group 200 further includes the second reaction chamber 270, and the third conduit 210 and the 4th conduit 220 are located at described second
In reaction chamber 270.The thin film deposition system 10 further includes vacuum evacuation device 500, and the vacuum evacuation device 500 is used for will be described
First reaction chamber 1100 and second reaction chamber 270 vacuumize.The vacuum evacuation device 500 is used for before the reaction by reaction chamber
Interior foreign gas extraction, avoids pollution depositional coating.Or for after the reaction, extra inert gas to be generated with other
Gas extraction.
In a further embodiment, the vacuum evacuation device 500 vacuumizes conduit 510 and second including first and vacuumizes
Conduit 520.Described first, which vacuumizes conduit 510, is located in first reaction chamber 1100, and described second vacuumizes 520, conduit
In in second reaction chamber 270.Described first vacuumizes the setting of conduit 510 leads in first conduit 110 and described second
Between pipe 120.Described second, which vacuumizes conduit 520, is arranged between the third conduit 210 and the 4th conduit 220.Its
In first vacuumize conduit 510 be arranged between first conduit 110 and second conduit 120, can more effectively take out
Other gaseous products or inert gas after the first plasma gas and the second plasma gas react out.Equally
, second, which vacuumizes conduit 520, is arranged between the third conduit 210 and the 4th conduit 220, can more effectively take out
Other gaseous products or inert gas after third plasma gas and the 4th plasma gas react out.
Referring to Fig. 3, in a further embodiment, first conduit 110 includes first gas outlet 111, described
Second conduit 120 includes second gas outlet 121, first gas outlet 111 and second gas outlet 121 it is transversal
Face is arranged in parallel with the substrate 300.That is 121 alignment of the first gas outlet 111 and second gas outlet
The substrate 300 is arranged, so that the first plasma gas can uniformly fall into the substrate after coming out from the first conduit 110
300 surface, and the surface for alloing the second plasma gas uniformly to fall into the substrate 300.Make the first plasma
Body gas and the second plasma gas uniformly contact, to form the film layer of even compact.
It is understood that the gas vent of the third conduit 210 and the 4th conduit 220 is parallel with the substrate 300
Setting.Effect is same as above.
Referring to Fig. 4, in a further embodiment, the first gas outlet 111 is equipped with evenly arranged multiple gas
Body portals 1111, in the first gas outlet 111 close to the described first gas for vacuumizing conduit 510 portal 1111 it is intensive
Degree (1111a in such as Fig. 4) is greater than the gas that first gas outlet 111 vacuumizes conduit 510 far from described first and goes out
The concentration (1111b in such as Fig. 4) in hole 1111.The gas on the right of the i.e. described first gas outlet 111 portals 1111a's
The gas that concentration is greater than the left side portals the concentration of 1111b.Due to vacuumizing the position of conduit 510 close to described first
It is eager to excel compared to the degree being evacuated far from the described first position for vacuumizing conduit 510, so the first plasma gas
Density below first gas outlet 111 is low relative to the density far from the described first position for vacuumizing conduit 510.The reality
Applying the setting in example can make 111 output of first gas outlet uniform to the first plasma gas on substrate 300, into
And form uniformity and the high film layer of consistency.
It is understood that the gas that the first gas outlet 111 vacuumizes conduit 510 close to described first portals
1111 aperture be greater than the first gas outlet 111 vacuumize conduit 510 far from described first gas portal 1111 hole
Diameter.It will be close to portal 1111 aperture of the gas that described first vacuumizes conduit 510 to vacuumize and lead compared to far from described first
The portal 1111 aperture setting of the gas of pipe 510 more equally can solve above-mentioned technical problem greatly, form uniformity and densification
Spend high film layer.
It is understood that the gas of the second gas outlet 121 portals, arrangement is identical as first gas outlet 111.
Conduit 510 is vacuumized close to first since second gas exports 121 left sides, a left side so gas of second gas outlet 121 portals
The concentration on side or aperture are greater than the right.It will also be appreciated that in the gas conduit in other N thin film depositional coatings
Gas arrangement and first gas outlet 111 of portalling it is identical.
In a further embodiment, first conduit 110 and the second conduit 120 respectively with the substrate 300 away from
From for 1-10mm.Above-mentioned setting can be such that the corresponding plasma gas exported effectively reacts on 300 surface of substrate, can make
Inert gas preferably cleans 300 surface of substrate.
In a further embodiment, the second inert gas conduit 140 is 1- at a distance from the substrate 300 respectively
10mm.So that second inert gas more effectively cleans substrate 300.
Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed,
But it should not be understood as limiting the scope of the patent of the utility model.It should be pointed out that for the common of this field
For technical staff, without departing from the concept of the premise utility, various modifications and improvements can be made, these all belong to
In the protection scope of the utility model.Therefore, the scope of protection shall be subject to the appended claims for the utility model patent.
Claims (15)
1. a kind of thin film deposition system, which is characterized in that the thin film deposition system on substrate for depositing plural layers, institute
Stating thin film deposition system includes:
The first film deposition mould group and the second film deposition mould group being disposed adjacent, the first film deposition mould group is for exporting
Gas and the first film layer is formed on substrate；
The second film deposition mould group forms the second film layer for output gas on substrate；
Substrate can be deposited to the substrate transport mould group of mould group and the deposition mould group movement of the second film, the substrate relative to the first film
Mould group is transported to be used to substrate depositing mould group to second film deposition mould group movement, in the base from the first film
The first film layer and the second film layer being stacked are formed on plate.
2. thin film deposition system as described in claim 1, which is characterized in that the substrate is located at the first film deposition mould
When in group range, it is located at except second film deposition mould group range.
3. thin film deposition system as described in claim 1, which is characterized in that the part substrate is located at the first film deposition mould
When in group range, substrate described in another part is located within the scope of second film deposition mould group.
4. thin film deposition system as described in claim 1, which is characterized in that the first film depositing system is led including first
Pipe and the second conduit, first conduit for exporting the first plasma gas, second conduit for export second it is equal from
Sub- gas.
5. thin film deposition system as claimed in claim 4, which is characterized in that second thin film deposition system includes that third is led
Pipe and the 4th conduit, the third conduit for exporting third plasma gas, the 4th conduit for export the 4th it is equal from
Sub- gas.
6. thin film deposition system as claimed in claim 5, which is characterized in that the thin film deposition system further include first it is equal from
Daughter gas source, the second plasma gas source, third plasma gas source and the 4th plasma gas source, first plasma
Gas source is used to provide the described the first plasma gas, and the first plasma gas source is connected to first conduit；Institute
It states the second plasma gas source and is used to provide the described the second plasma gas, and the second plasma gas source and described the
The connection of two conduits；The third plasma gas source is used to provide the described third plasma gas, and the third plasma
Body gas source is connected to the third conduit；The 4th plasma gas source is used to provide the described the 4th plasma gas, and
The 4th plasma gas source is connected to the 4th conduit.
7. thin film deposition system as described in claim 1, which is characterized in that the first film depositing system includes for defeated
Out the first conduit of the first plasma gas and for output gas type be different from first plasma gas second etc.
Second conduit of ionized gas.
8. thin film deposition system as claimed in claim 4, which is characterized in that the first film deposition mould group further includes being used for
Export the first inert gas conduit of the first inert gas, the first inert gas conduit be located at first conduit with it is described
Between second conduit.
9. thin film deposition system as claimed in claim 4, which is characterized in that first conduit is compared to second conduit
Far from second film deposition mould group setting, the first film deposition mould group further includes the second inert gas conduit, described
Second inert gas conduit is located at side of first conduit far from second conduit or to be located at the second conduit separate
First conduit side, the second inert gas conduit is for exporting the second inert gas.
10. thin film deposition system as claimed in claim 4, which is characterized in that the first film depositing system further includes using
In the second inert gas conduit of the second inert gas for generating cleaning substrate, and for generating the first plasma gas of isolation
With the first inert gas conduit of the first inert gas of the second plasma gas.
11. thin film deposition system as claimed in claim 4, which is characterized in that the first film deposition mould group further includes the
One reaction chamber, first conduit and second conduit are located in first reaction chamber；The thin film deposition system also wraps
Vacuum evacuation device is included, the vacuum evacuation device is for vacuumizing first reaction chamber.
12. thin film deposition system as claimed in claim 11, which is characterized in that the vacuum evacuation device is vacuumized including first
Conduit, described first, which vacuumizes conduit, is arranged between first conduit and second conduit.
13. thin film deposition system as claimed in claim 4, which is characterized in that first conduit includes first gas outlet,
Second conduit includes second gas outlet, the cross section that first gas outlet and the second gas export with it is described
Substrate-parallel setting.
14. thin film deposition system as described in claim 1, which is characterized in that the substrate transport mould group is also used to will be described
Substrate deposits mould group to the first film deposition mould group movement from second film.
15. thin film deposition system as claimed in claim 4, which is characterized in that first conduit and second conduit point
It is 1-10mm not at a distance from the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820654039.9U CN208250415U (en) | 2018-05-03 | 2018-05-03 | A kind of thin film deposition system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820654039.9U CN208250415U (en) | 2018-05-03 | 2018-05-03 | A kind of thin film deposition system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208250415U true CN208250415U (en) | 2018-12-18 |
Family
ID=64635769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820654039.9U Active CN208250415U (en) | 2018-05-03 | 2018-05-03 | A kind of thin film deposition system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208250415U (en) |
-
2018
- 2018-05-03 CN CN201820654039.9U patent/CN208250415U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9359674B2 (en) | Apparatus and method for dielectric deposition | |
| KR101760789B1 (en) | Method for depositing multi-layered layers and/or gradient layers | |
| CN101921994B (en) | Device and method for depositing ultrathin alumina film by atomic layer | |
| TWI793303B (en) | Continuous apparatus and method for coating substrates | |
| CN203174200U (en) | Plasma enhanced atomic layer deposition equipment | |
| KR20120104410A (en) | Inline coating installation | |
| CN101994102A (en) | Film deposition device | |
| JP2014534336A (en) | Coating preparation method by atmospheric pressure plasma method | |
| CN104762609A (en) | Process and device of forming multilayer insulating thin film on inner wall of glass container | |
| Chen et al. | Spatial atomic layer deposition of ZnO/TiO2 nanolaminates | |
| CN110527948A (en) | The manufacturing method of film formation device, film build method and electronic device | |
| CN103237919A (en) | Modular coater separation | |
| CN108611613A (en) | A kind of preparation method of nano-multilayered structures carbon-base film | |
| WO2013149572A1 (en) | Equipment for large-scale continuous preparation of two-dimensional nanometer thin film | |
| CN208250415U (en) | A kind of thin film deposition system | |
| KR20140128322A (en) | Method and device for passivating solar cells with an aluminium oxide layer | |
| CN105154848A (en) | Method for preparing nitrogen oxygen silicon thin film | |
| CN110528003A (en) | A kind of composite preparation process of coating | |
| RU2583196C2 (en) | Method of depositing transparent barrier multilayer system | |
| US20140329031A1 (en) | Method for forming complex film of diamond-like carbon and silicon carbide | |
| CN104746046A (en) | Atomic layer deposition device | |
| CN212103012U (en) | High-precision low-stress optical film deposition device | |
| CN211339682U (en) | Film coating equipment | |
| WO2021097894A1 (en) | Method for preparing ag2s thin film | |
| TW201725280A (en) | Atomic layer deposition apparatus and semiconductor process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Thin film deposition system and control method Effective date of registration: 20200723 Granted publication date: 20181218 Pledgee: CITIC Bank Limited by Share Ltd. Shenzhen branch Pledgor: SHENZHEN ROYOLE DISPLAY TECHNOLOGY Co.,Ltd. Registration number: Y2020980004337 |
|
| PP01 | Preservation of patent right | ||
| PP01 | Preservation of patent right |
Effective date of registration: 20240123 Granted publication date: 20181218 |