CN212342638U - 中低压沟槽型mos器件 - Google Patents
中低压沟槽型mos器件 Download PDFInfo
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- CN212342638U CN212342638U CN202021210590.8U CN202021210590U CN212342638U CN 212342638 U CN212342638 U CN 212342638U CN 202021210590 U CN202021210590 U CN 202021210590U CN 212342638 U CN212342638 U CN 212342638U
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 65
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 57
- 229920005591 polysilicon Polymers 0.000 claims abstract description 40
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 19
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 10
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- Insulated Gate Type Field-Effect Transistor (AREA)
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CN202021210590.8U CN212342638U (zh) | 2020-06-28 | 2020-06-28 | 中低压沟槽型mos器件 |
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CN202021210590.8U CN212342638U (zh) | 2020-06-28 | 2020-06-28 | 中低压沟槽型mos器件 |
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CN212342638U true CN212342638U (zh) | 2021-01-12 |
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CN202021210590.8U Active CN212342638U (zh) | 2020-06-28 | 2020-06-28 | 中低压沟槽型mos器件 |
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Effective date of registration: 20240206 Address after: 518000 Room 201, building A, 1 front Bay Road, Shenzhen Qianhai cooperation zone, Shenzhen, Guangdong Patentee after: Shenzhen Hemeiyuan Technology Co.,Ltd. Country or region after: China Address before: Room 501, building nw20, Suzhou nano City, 99 Jinjihu Avenue, Suzhou Industrial Park, 215000, Jiangsu Province Patentee before: SUZHOU SILIKRON SEMICONDUCTOR TECHNOLOGY CO.,LTD. Country or region before: China |
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TR01 | Transfer of patent right |
Effective date of registration: 20240322 Address after: Room 306, Building 2, No.1 Qingshan Road, High tech Zone, Suzhou City, Jiangsu Province, 215100 Patentee after: New Silicon Microelectronics (Suzhou) Co.,Ltd. Country or region after: China Address before: 518000 Room 201, building A, 1 front Bay Road, Shenzhen Qianhai cooperation zone, Shenzhen, Guangdong Patentee before: Shenzhen Hemeiyuan Technology Co.,Ltd. Country or region before: China |
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