CN212209475U - 引线框架及封装体 - Google Patents

引线框架及封装体 Download PDF

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CN212209475U
CN212209475U CN202020643140.1U CN202020643140U CN212209475U CN 212209475 U CN212209475 U CN 212209475U CN 202020643140 U CN202020643140 U CN 202020643140U CN 212209475 U CN212209475 U CN 212209475U
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lead frame
chip
base island
die attach
lead
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董美丹
阳小芮
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Shanghai Kaihong Electronic Co Ltd
Diodes Shanghai Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
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    • H01ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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Abstract

提供一种引线框架,包括至少一个基岛,所述基岛具有芯片贴装区和非芯片贴装区,所述非芯片贴装区的表面突出于所述芯片贴装区的表面。在本实用新型中,通过在所述基岛区设置特殊结构的芯片贴装区,使得所述芯片贴装区的表面与所述非芯片贴装区的表面之间形成阶梯过渡,以增加锁模面积,分散应力集中平面并改善金属焊线冲线,进而防止芯片、粘结材料与引线框架之间发生分层,以提高产品的可靠性性能。

Description

引线框架及封装体
技术领域
本实用新型涉及半导体封装领域,尤其涉及一种引线框架及采用该引线框架的封装体。
背景技术
封装产品通常是将芯片贴装于引线框架上并以塑封料封装。
请参见图1,图1是一常规封装产品,例如QFN封装产品的内部结构示意图。如图1所示,在一常规封装体1中,芯片2通过粘结材料3贴装于引线框架10的基岛11上,并通过金属线4与所述引线框架10的引脚12连接。最后,以塑封料5封装所述芯片2及所述引线框架10,以形成所述封装体1。
然而,在图1所示的结构中,由于所述芯片2、所述粘结材料3与所述引线框架4三者的热膨胀系数不同,因而三者在温度循环中的变形率不同,从而使得产生于所述粘结材料3与所述引线框架4之间的接触面及所述粘结材料3与所述引线框架4之间的接触面上的应力不同,最终导致三者脱离而造成分层。
此外,请参见图2,图2是本领域另一种预封装产品的结构示意图。在图2所示的预封装结构中,引线框架的上下表面均进行了半蚀刻工艺,使得引线框架下表面在基岛21与引脚22、引脚22与引脚22之间形成半蚀刻凹槽,用于设置无填料塑封料23。然后,在分别形成第一金属层24和第二金属层25之后,以另一种有填料塑封料29对封装结构整体进行封装。
具体来说,如图2所示,基岛21正面中央区域下沉,在引脚22的正面设置有第一金属层24,在基岛21和引脚22的背面设置有第二金属层25,在引脚22外围、基岛21与引脚22之间的区域嵌置无填料塑封料23,使得所述无填料塑封料23将引脚22的下部外围、基岛21与引脚22的下部以及引脚22与引脚22的下部连接成一体,进而使得所述基岛21和引脚22背面尺寸小于所述基岛21和引脚22正面尺寸,形成了上大下小的基岛和引脚结构。从而增加了塑封体与金属脚的束缚能力。
然而,在图2所示的封装结构中,需要对引线框架的上下表面均进行半蚀刻,同时为了实现塑封体与金属脚的束缚能力,需要以两种塑封料进行两步封装,大大增加了封装体的制程复杂度。具体来说,在图2所示的封装结构中,需要首先进行引线框架的上下表面半蚀刻,随后先以无填料塑封料23对所述引线框架的引脚22外围、基岛21与引脚22之间的区域进行填充,以解决引线框架因本身厚度薄而产生的塑封之后的翘曲问题,以及因且翘曲而造成的封装成品的分层问题。并且,图2所示的封装结构中为多基岛、多圈引脚的结构。
经实验表明,在图2所示的多基岛多圈引脚的预封装结构中,由于引线框架的金属连续小,即,整个引线框架的镂空面积大而使得构成引线框架的金属材料分布分散,因此,在图2所示的预封装结构中,必须先使用无填料塑封料23进行预封装,存在制程复杂的问题。并且,由于金属材料分散,使得基岛21的上表面半蚀刻回造成对引线28的支撑力不足。
此外,图2所示的封装产品中由于基岛21的边缘结构的限制,使得其锁模面积未有变化,无法有效解决芯片、粘结材料与引线框架等结构分层的情况发生。
因此,亟需一种新型的引线框架,以避免封装成型时发生芯片、粘结材料与引线框架等结构分层的情况发生。
实用新型内容
本实用新型所要解决的技术问题是,提供一种引线框架及采用该引线框架的封装体。本实用新型的所述引线框架,通过在所述基岛区设置特殊结构的芯片贴装区,以增加锁模面积,分散应力集中平面并改善金属焊线冲线,进而防止芯片、粘结材料与引线框架之间发生分层,以提高产品的可靠性性能。尤其是,在本实用新型中,提供一种金属连续性大、分布分散度低的引线框架,通过在所述基岛区设置特殊结构的芯片贴装区,以解决金属分布分散度低的引线框架中应力过于集中的问题。
为了解决上述问题,根据本实用新型的一方面,提供一种引线框架,包括至少一个基岛;所述基岛具有芯片贴装区和非芯片贴装区,所述非芯片贴装区的表面突出于所述芯片贴装区的表面。
在一些实施例中,所述引线框架包括一个或两个基岛,并且每一基岛对应一排或两排引脚。
具体地,在一些实施例中,在所述基岛用于贴装一外部芯片的一侧,所述非芯片贴装区的表面突出于所述芯片贴装区的表面。
在一些实施例中,所述非芯片贴装区围绕所述芯片贴装区。
也就是说,在一些实施例中,所述芯片贴装区为所述基岛中用于贴装以外部芯片的区域,所述非芯片贴装区则为所述基岛中除去所述芯片贴装区以外的区域。
在一些实施例中,所述非芯片贴装区的表面与所述芯片贴装区的表面形成阶梯过渡。
在一些实施例中,所述非芯片贴装区的厚度大于所述芯片贴装区的厚度。
在一些实施例中,所述框架单元还包括引脚部,所述基岛在靠近所述引脚部的侧边处形成一延伸部,所述延伸部由所述基岛的侧边向所述引脚部延伸。
在一些实施例中,所述延伸部由突出于所述芯片贴装区的非芯片贴装区的表面朝向所述引脚部延伸,使得所述延伸部具有一小于所述基岛的厚度,并与所述基岛形成一台阶。
根据本实用新型的另一方面,提供一种封装体,包括一引线框架、贴装于所述引线框架上的芯片及一塑封所述引线框架的塑封体,所述引线框架包括至少一基岛,所述基岛具有芯片贴装区和非芯片贴装区,所述芯片贴装于所述芯片贴装区内,并且所述非芯片贴装区的表面突出于所述芯片贴装区贴装所述芯片的表面。
在一些实施例中,所述引线框架还包括引脚部,所述基岛在靠近所述引脚部的侧边处形成一延伸部,所述延伸部由所述基岛的侧边向所述引脚部延伸,并且,所述延伸部由突出于所述芯片贴装区的非芯片贴装区的表面朝向所述引脚部延伸,使得所述延伸部具有一小于所述基岛的厚度,并与所述基岛形成一台阶。
在一些实施例中,所述芯片的焊盘通过一金属线与所述引脚部的一引脚电性连接。
在一些实施例中,所述芯片通过粘结材料或焊接材料贴装于所述芯片贴装区内。
在本实用新型中,通过在所述基岛区设置特殊结构的芯片贴装区,使得所述芯片贴装区的表面与所述非芯片贴装区的表面之间形成阶梯过渡,以增加锁模面积,分散应力集中平面并改善金属焊线冲线,进而防止芯片、粘结材料与引线框架之间发生分层,以提高产品的可靠性性能。
附图说明
图1是常规封装体的内部结构示意图;
图2是另一种常规封装体的内部结构示意图;
图3是根据本实用新型一实施例的一引线框架的结构示意图;
图4是根据本实用新型一实施例的所述框架单元的结构示意图;
图5是图4中A-A’截面图;
图6是根据本实用新型一实施例的一封装体的内部结构示意图。
具体实施方式
下面结合附图对本实用新型提供的引线框架及采用该引线框架的封装体的具体实施方式做详细说明。
以下结合图3至图5,首先详细描述本实用新型所述引线框架。其中,图3是根据本实用新型一实施例的一引线框架的结构示意图;图4是根据本实用新型一实施例的一个框架单元的结构示意图;图5是图4中A-A’截面图。
如图3所示,在本实施例中,首先提供一种引线框架100。本领域技术人员可以理解的是,所述引线框架100包括复数个框架单元110,所述复数个框架单元110通过一外框120连接而形成一体。每一所述框架单元110通过一封装线W界定,相邻的框架单元110之间为一切割道。也就是说,封装线W圈示的区域为框架单元110的区域。在图3中示意性绘示四个框架单元110,本领域技术人员可以理解的是,所述引线框架100可以包含任意多个所述框架单元110。以下,结合图4及图5,以一个框架单元110作为示范例,详细描述本实用新型所述引线框架100的具体结构。
如图4所示,每一所述框架单元110具有一基岛111和引脚部112,所述基岛111通过数条连筋113与所述外框120连接。每一所述连筋113自所述框架单元110的封装线W内延伸至所述封装线W外。
本领域技术人员可以理解的是,在本实施例中,所述基岛111的轮廓形状及、所述引脚部112的轮廓形状、所述连筋113的轮廓形状并非本实用新型的创新点所在,因此,本实用新型不预意对所述基岛111的轮廓形状、所述引脚部112的轮廓形状,以及所述连筋113的轮廓形状进行限定,图4中所示具体结构仅作说明之用。
如图4所示每一所述框架单元110具有一个基岛111和两排引脚112。因此,在本实施例中,如图3和图4所示的,所述引线框架100的金属连续性大、分布分散度低。因而,在本领域中,通常该种结构的引线框架100均存在平面应力过于集中的问题。
因此,在本实用新型中为了解决该种金属连续性大、分布分散度低的引线框架的应力集中问题,如图4所示,使得所述基岛111具有芯片贴装区111A和非芯片贴装区111B,所述芯片贴装区111A是指所述基岛111中用于贴装一外部芯片的区域,而所述非芯片贴装区111B则是指所述基岛111中除了所述芯片贴装区111A以外的其他区域。从而,所述非芯片贴装区111B围绕所述芯片贴装区111A。
本领域技术人员可以理解的是,在本实施例中,所述芯片贴装区111A的轮廓形状及每一所述基岛111所含有的所述芯片贴装区111A的数量是可以根据实际技术需求而进行调整的。也就是说,在本实用新型的所述引线框架100中,每一所述基岛111的所述芯片贴装区111A可以是一个,也可以是多个,所述芯片贴装区111A的轮廓形状可以是多种多样的。本实用新型不预意对每一所述基岛111所含有的所述芯片贴装区111A的数量及轮廓形状进行限定,图4中所示具体结构仅作说明之用。
如图5所示,所述非芯片贴装区111B的表面突出于所述芯片贴装区111A的表面。具体地,在所述基岛111用于贴装一外部芯片的一侧,所述非芯片贴装区111B的表面突出于所述芯片贴装区111A的表面。并且,如图5所示,所述非芯片贴装区111B的表面与所述芯片贴装区111A的表面形成阶梯过渡。
也就是说,如图5所示,所述基岛111在用于贴装一外部芯片的一侧(图5中为上侧),所述非芯片贴装区111B的表面与所述芯片贴装区111A的表面之间的落差,使得所述基岛111在所述芯片贴装区111A形成了凹槽结构。
此外,如图5所示,所述非芯片贴装区111B的厚度TB大于所述芯片贴装区111A的厚度TA。此处,所述非芯片贴装区111B的厚度TB是指所述非芯片贴装区111B的上下表面之间高度差的最大值。
本领域技术人员可以理解的是,可以以本领域已知的方式在所述基岛111中形成所述芯片贴装区111A。例如,形成所述芯片贴装区111A的方法包括但不限于上表面半蚀刻工艺。
如图5所示,所述基岛111在靠近所述引脚部112的侧边处形成一延伸部114,所述延伸部114由所述基岛113的侧边向所述引脚部112延伸。具体地,如图5所示,所述延伸部114由突出于所述芯片贴装区111A的非芯片贴装区111B的表面(图5中为上表面)朝向所述引脚部112延伸,使得所述延伸部114具有一小于所述基岛111的厚度,从而使得所述延伸部114与所述基岛111之间形成了图5所示的台阶。
本领域技术人员可以理解的是,可以以本领域已知的方式在所述基岛111中形成延伸部114。例如,形成所述延伸部114的方法包括但不限于下表面半蚀刻工艺。
在另一实施例中还提供一种封装体200,如图6所示,所述封装体200包括如图3至图5所示的引线框架100,以及贴装于所述引线框架100上的芯片220,尤其是,所述芯片220贴装于所述引线框架100的所述基岛111的芯片贴装区111A内。所述芯片220通过粘结材料(也可以是焊接材料)230贴装于所述芯片贴装区内111A。所述芯片220的焊盘则通过金属线240与所述引线框架100的引脚部112中的引脚电性连接。最终,如图6所示的,以塑封料250封装所述芯片220及所述引线框架100,以形成所述封装体200。
则如图5及图6所示的,由于本实施例中所述基岛111的所述芯片贴装区111A的表面与所述非芯片贴装区111B的表面之间形成阶梯过渡,从而在封装时可以增加锁模面积,分散应力集中平面并改善金属焊线冲线,进而防止芯片220、粘结材料230与引线框架100之间发生分层,以提高产品的可靠性性能。
以上所述仅是本实用新型的优选实施方式,应当指出,对于本技术领域的普通技术人员,在不脱离本实用新型原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本实用新型的保护范围。

Claims (10)

1.一种引线框架,包括至少一个基岛,其特征在于,所述基岛具有芯片贴装区和非芯片贴装区,所述非芯片贴装区的表面突出于所述芯片贴装区的表面。
2.如权利要求1所述的引线框架,其特征在于,所述非芯片贴装区围绕所述芯片贴装区。
3.如权利要求1所述的引线框架,其特征在于,所述非芯片贴装区的表面与所述芯片贴装区的表面形成阶梯过渡。
4.如权利要求1所述的引线框架,其特征在于,所述非芯片贴装区的厚度大于所述芯片贴装区的厚度。
5.如权利要求1所述的引线框架,其特征在于,所述引线框架还包括引脚部,所述基岛在靠近所述引脚部的侧边处形成一延伸部,所述延伸部由所述基岛的侧边向所述引脚部延伸。
6.如权利要求5所述的引线框架,其特征在于,所述延伸部由突出于所述芯片贴装区的非芯片贴装区的表面朝向所述引脚部延伸,使得所述延伸部具有一小于所述基岛的厚度,并与所述基岛形成一台阶。
7.一种封装体,包括一引线框架、贴装于所述引线框架上的芯片及一塑封所述引线框架的塑封体,其特征在于,所述引线框架包括至少一基岛,所述基岛具有芯片贴装区和非芯片贴装区,所述芯片贴装于所述芯片贴装区内,并且所述非芯片贴装区的表面突出于所述芯片贴装区贴装所述芯片的表面。
8.如权利要求7所述的封装体,其特征在于,所述引线框架还包括引脚部,所述基岛在靠近所述引脚部的侧边处形成一延伸部,所述延伸部由所述基岛的侧边向所述引脚部延伸,并且,所述延伸部由突出于所述芯片贴装区的非芯片贴装区的表面朝向所述引脚部延伸,使得所述延伸部具有一小于所述基岛的厚度,并与所述基岛形成一台阶。
9.如权利要求8所述的封装体,其特征在于,所述芯片的焊盘通过一金属线与所述引脚部的一引脚电性连接。
10.如权利要求9所述的封装体,其特征在于,所述芯片通过粘结材料或焊接材料贴装于所述芯片贴装区内。
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