CN212135944U - Buzzer driving circuit for enhancing driving capability in low voltage - Google Patents
Buzzer driving circuit for enhancing driving capability in low voltage Download PDFInfo
- Publication number
- CN212135944U CN212135944U CN202020141816.7U CN202020141816U CN212135944U CN 212135944 U CN212135944 U CN 212135944U CN 202020141816 U CN202020141816 U CN 202020141816U CN 212135944 U CN212135944 U CN 212135944U
- Authority
- CN
- China
- Prior art keywords
- diode
- voltage
- nmos
- signal line
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Electronic Switches (AREA)
Abstract
The utility model provides a strengthen bee calling organ drive circuit of driving force during low voltage, including level conversion circuit, NMOS drive tube, diode D1, zener diode D2, electric capacity C. F is a frequency signal, a source electrode of the NMOS driving tube is connected with a ground wire, a drain electrode of the NMOS driving tube is connected with an output Vo, an anode of a diode D1 is connected with the output Vo, a cathode of a diode D1 is connected with a signal wire VCC, a cathode of a voltage stabilizing diode D2 is connected with the signal wire VCC, an anode of a voltage stabilizing diode D2 is connected with the ground wire, one end of a capacitor C is connected with the signal wire VCC, the other end of the capacitor C is connected with the ground wire, F is connected with a signal input of a level conversion circuit, a power wire VDD is connected with one power input of the level conversion circuit, the signal wire VCC is connected with the other power. The utility model discloses an improve the driving force of NMOS drive tube grid voltage in order to strengthen the NMOS drive tube.
Description
Technical Field
The utility model relates to an electromagnetic type buzzer circuit field, concretely relates to buzzer drive circuit.
Background
As shown in fig. 3, in the conventional electromagnetic buzzer driving circuit, when the voltage of the power line is relatively low, the gate voltage of the buzzer driving tube is also relatively low, so that the driving capability of the buzzer driving tube is insufficient.
SUMMERY OF THE UTILITY MODEL
The utility model provides a bee calling organ drive circuit of reinforcing driving force during low voltage when supply line voltage ratio is lower time to the grid voltage ratio of solving the bee calling organ drive tube is lower and leads to the problem that bee calling organ drive tube driving force is not enough.
In order to solve the technical problem, the utility model provides a buzzer drive circuit of reinforcing driving force during low voltage, including level conversion circuit, NMOS drive tube, diode D1, zener diode D2, electric capacity C. F is a frequency signal, the source electrode of the NMOS driving tube is connected with a ground wire, the drain electrode of the NMOS driving tube is connected with an output Vo, the anode of a diode D1 is connected with the output Vo, the cathode of a diode D1 is connected with a signal line VCC, the cathode of a voltage stabilizing diode D2 is connected with the signal line VCC, the anode of a voltage stabilizing diode D2 is connected with the ground wire, one end of a capacitor C is connected with the signal line VCC, the other end of the capacitor C is connected with the ground wire, the signal line F is connected with the signal input of a level conversion circuit, a power line VDD is connected with one power input of the level conversion circuit, the signal line VCC is connected with the other power input of.
In practical application, the output Vo is externally connected with a buzzer electromagnetic coil. The function of the level shift circuit is to increase the voltage swing of the frequency signal F from the power line VDD voltage to the ground voltage to the signal line VCC voltage to the ground voltage. When the NMOS drive tube is cut off, the buzzer electromagnetic coil connected with the output Vo charges the capacitor C through the diode D1 and is limited in a certain voltage range by the voltage stabilizing diode D2, when the voltage ratio of the power line VDD is lower, circuit parameters are properly designed, the voltage of the signal line VCC is larger than that of the power line VDD, after the F frequency signal is subjected to level conversion, the level swing amplitude is increased, namely the high level voltage value on the grid electrode of the NMOS drive tube is increased, and the effect of increasing the drive capability of the NMOS drive tube is achieved.
Preferably, the diode D1 may be connected in series with a resistor.
Preferably, the zener diode D2 may be replaced by other devices and combinations thereof capable of achieving a voltage stabilizing effect, such as by replacing more than one common diode in series, or by replacing the diode in series with a MOS transistor, or by replacing the diode in series with a diode connected triode, or the like.
Preferably, the substrate of the NMOS driving transistor may be connected to a ground line, or may be connected to another potential.
The utility model discloses the beneficial effect who brings: the utility model provides a pair of strengthen driving force's buzzer drive circuit during low-voltage utilizes the characteristics that buzzer solenoid electric current can not mutate, when mains voltage is lower, through the grid voltage who improves the NMOS drive tube, plays the effect of reinforcing NMOS drive tube drive capacity. The circuit has the advantages of low cost and good performance.
Drawings
Fig. 1 is a schematic structural diagram of a buzzer driving circuit for enhancing driving capability at low voltage of the present invention.
Fig. 2 is a schematic diagram of a buzzer driving circuit for enhancing driving capability at low voltage according to the first embodiment of the present invention.
Figure 3 is a background art schematic.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in detail with reference to the accompanying drawings and specific embodiments.
As shown in fig. 1, the utility model provides a pair of strengthen bee calling organ drive circuit of driving force during low voltage, including level shift circuit, NMOS drive tube, diode D1, zener diode D2, electric capacity C. F is a frequency signal, the source electrode of the NMOS driving tube is connected with a ground wire, the drain electrode of the NMOS driving tube is connected with an output Vo, the anode of a diode D1 is connected with the output Vo, the cathode of a diode D1 is connected with a signal line VCC, the cathode of a voltage stabilizing diode D2 is connected with the signal line VCC, the anode of a voltage stabilizing diode D2 is connected with the ground wire, one end of a capacitor C is connected with the signal line VCC, the other end of the capacitor C is connected with the ground wire, the signal line F is connected with the signal input of a level conversion circuit, a power line VDD is connected with one power input of the level conversion circuit, the signal line VCC is connected with the other power input of.
The function of the level shift circuit is to increase the voltage swing of the frequency signal F from the power line VDD voltage to the ground voltage to the signal line VCC voltage to the ground voltage.
In practical application, the output Vo is externally connected with a buzzer electromagnetic coil. When the NMOS driving transistor is turned off, as shown in fig. 1, the buzzer electromagnetic coil connected to the output Vo charges the capacitor C through the diode D1, and is limited within a certain voltage range by the zener diode D2, when the voltage of the power line VDD is relatively low, circuit parameters are properly designed, so that the voltage of the signal line VCC is greater than the voltage of the power line VDD, and after the F frequency signal undergoes level conversion, the level swing is increased, that is, the high level voltage value on the gate of the NMOS driving transistor is increased, thereby increasing the driving capability of the NMOS driving transistor.
The utility model discloses a first embodiment: as shown in fig. 2, the device comprises an NMOS driving transistor, a resistor R, a diode D1, a diode D2, a diode D3, a diode D4, a diode D5, a diode D6, a diode D7, a diode D8, a capacitor C, PMOS transistor P1, a PMOS transistor P2, a PMOS transistor P3, an NMOS transistor N1, an NMOS transistor N2, and an NMOS transistor N3. Wherein F is a frequency signal, the source of the NMOS driving tube is connected with the ground, the drain of the NMOS driving tube is connected with the output Vo, one end of the resistor R is connected with the output Vo, the other end of the resistor R is connected with the anode of a diode D1, the cathode of a diode D1 is connected with a signal line VCC, one end of a capacitor C is connected with the signal line VCC, the other end of the capacitor C is connected with the ground, the anode of a diode D2 is connected with the signal line VCC, the cathode of a diode D2 is connected with the anode of a diode D3, the cathode of a diode D3 is connected with the anode of a diode D4, the cathode of a diode D4 is connected with the anode of a diode D5, the cathode of a diode D5 is connected with the anode of a diode D6, the cathode of a diode D6 is connected with the anode of a diode D7, the cathode of a diode D7 is connected with the anode of a diode D8, the cathode of a diode D8 is connected, the source of an NMOS tube N1 is connected with the ground, the substrate of an NMOS tube N1 is connected with the ground, the drain of the NMOS tube N1 is connected with a signal line Fb, the gate of the NMOS tube N1 is connected with a signal line F, the source of the PMOS tube P2 is connected with a signal line VCC, the substrate of a PMOS tube P2 is connected with the signal line VCC, the drain of the PMOS tube P2 is connected with a signal line G1, the gate of the PMOS tube P2 is connected with a signal line G, the source of the NMOS tube N2 is connected with the ground, the substrate of the NMOS tube N2 is connected with the ground, the drain of the NMOS tube N2 is connected with a signal line G1, the gate of the NMOS tube N2 is connected with a signal line F, the source of the PMOS tube P3 is connected with a signal line VCC, the substrate of the PMOS tube P3 is connected with a signal line VCC, the drain of the PMOS tube P3 is connected with a signal line G, the gate of the PMOS tube P3 is connected with a signal line.
As shown in fig. 2, in conjunction with fig. 1, diode D2, diode D3, diode D4, diode D5, diode D6, diode D7 and diode D8 in fig. 2 are connected in series instead of zener diode D2 in fig. 1, and resistor R is connected in series with diode D1 instead of diode D1 in fig. 1 in fig. 2.
In practical application, the output Vo is externally connected with a buzzer electromagnetic coil. From power-up, when the frequency signal F is at high level in the first period, the voltage of the signal line G is slightly lower than the power line VDD, the NMOS driving tube is conducted, the current flows through the buzzer electromagnetic coil connected with the output Vo, when the frequency signal F is at low level, the NMOS driving tube is cut off, the buzzer electromagnetic coil connected with the output Vo charges the capacitor C through the diode D1, the device parameters in the circuit are properly designed, when the frequency signal F is at high level in the second period, the voltage of the signal line VCC is increased, the voltage of the gate of the NMOS driving tube is higher than that of the gate in the first period, the capacitor can be charged to be close to the value defined by the series connection of the diodes D2, D3, D4, D5, D6, D7 and D8, and if the power line VDD is lower, the voltage of the signal line VCC is higher than the power line VDD, and the high level voltage value of the NMOS driving tube is higher than the power line VDD, thereby increasing the driving capability of the NMOS driving tube.
To sum up, the utility model provides a pair of bee calling organ drive circuit of reinforcing driving force during low-voltage utilizes the characteristics that bee calling organ solenoid electric current can not mutate, when mains voltage is lower, through the grid voltage who improves the NMOS drive tube, plays the effect of reinforcing NMOS drive tube drive ability. The circuit has the advantages of low cost and good performance.
The above description is only an example of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (5)
1. The utility model provides a bee calling organ drive circuit of reinforcing driving ability during low voltage, including level conversion circuit, the NMOS drive tube, diode D1, zener diode D2, electric capacity C, wherein, F is frequency signal, NMOS drive tube source connection ground wire, NMOS drive tube drain electrode connection output Vo, diode D1 anodal connection output Vo, diode D1 negative pole connects signal line VCC, zener diode D2 negative pole connects signal line VCC, zener diode D2 positive pole connects the ground wire, electric capacity C one end connects signal line VCC, the other end of electric capacity C connects the ground wire, signal line F connects level conversion circuit's signal input, power cord VDD connects one power input of level conversion circuit, signal line VCC connects another power input of level conversion circuit, level conversion circuit output G connects NMOS drive tube grid.
2. The buzzer driving circuit for enhancing driving ability at low voltage as claimed in claim 1, wherein the level shifter circuit functions to increase the voltage swing of the frequency signal F from the power line VDD voltage to the ground voltage to the signal line VCC voltage to the ground voltage.
3. The buzzer driving circuit for enhancing driving ability at low voltage as claimed in claim 1, wherein said diode D1 can be connected in series with a resistor.
4. The buzzer driving circuit for enhancing driving ability at low voltage as claimed in claim 1, wherein said zener diode D2 can be replaced by other devices and their combination for stabilizing voltage, such as more than one common diode in series, or diode in series with MOS transistor, or diode in series with triode in series, etc.
5. The buzzer driving circuit for enhancing driving ability at low voltage as claimed in claim 1, wherein the substrate of the NMOS driving transistor can be connected to ground or other potential.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020141816.7U CN212135944U (en) | 2020-01-22 | 2020-01-22 | Buzzer driving circuit for enhancing driving capability in low voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020141816.7U CN212135944U (en) | 2020-01-22 | 2020-01-22 | Buzzer driving circuit for enhancing driving capability in low voltage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212135944U true CN212135944U (en) | 2020-12-11 |
Family
ID=73678685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020141816.7U Active CN212135944U (en) | 2020-01-22 | 2020-01-22 | Buzzer driving circuit for enhancing driving capability in low voltage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212135944U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111063330A (en) * | 2020-01-22 | 2020-04-24 | 无锡十顶电子科技有限公司 | Buzzer driving circuit for enhancing driving capability in low voltage |
-
2020
- 2020-01-22 CN CN202020141816.7U patent/CN212135944U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111063330A (en) * | 2020-01-22 | 2020-04-24 | 无锡十顶电子科技有限公司 | Buzzer driving circuit for enhancing driving capability in low voltage |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103199677A (en) | One-way isolated type metal-oxide-semiconductor filed-effect transistor (MOSFET) drive circuit | |
| US20140062573A1 (en) | Level shift device | |
| CN204481715U (en) | Intelligent power module and air conditioner | |
| CN103715920A (en) | Rectifier circuit and radio frequency identification tag circuit chip comprising the same | |
| CN212135944U (en) | Buzzer driving circuit for enhancing driving capability in low voltage | |
| CN100589324C (en) | Voltage selecting circuit | |
| CN207368896U (en) | Bootstrapping drive circuit, synchronous rectification bootstrapping control circuit | |
| US6404268B1 (en) | Circuit for simulating zero cut-in voltage diode and rectifier having zero cut-in voltage characteristic | |
| CN101212179A (en) | Voltage boost circuit and voltage level shifter | |
| CN204215966U (en) | Relay drive circuit and relay | |
| CN212135942U (en) | Buzzer driving circuit with electromagnetic coil detection function | |
| EP2330714A2 (en) | A charging circuit | |
| CN204827995U (en) | Fan driver chip that single coil direct current is brushless | |
| CN107659173A (en) | Bootstrapping drive circuit, synchronous rectification bootstrapping control circuit | |
| CN107800293A (en) | A kind of drive circuit and the photovoltaic power optimization system using the drive circuit | |
| TWI405393B (en) | Charge pump driving circuit and charge pump system | |
| CN207743950U (en) | The driving circuit and electric discharge device of electric discharge metal-oxide-semiconductor | |
| CN203225649U (en) | Drive circuit of field effect transistor | |
| CN102545560A (en) | Power switch driver, IC chip, and DC-DC converter | |
| CN101667740B (en) | Output driving circuit in lithium battery charge and discharge protective chip | |
| CN113067462B (en) | Novel bootstrap drive circuit structure | |
| CN213070608U (en) | Buzzer driving circuit with temperature detection function | |
| CN113489126A (en) | High-efficient milliwatt level photovoltaic energy collection control circuit | |
| CN111063330A (en) | Buzzer driving circuit for enhancing driving capability in low voltage | |
| CN111105770A (en) | Buzzer driving circuit for enhancing driving capability |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |