CN111063330A - Buzzer driving circuit for enhancing driving capability in low voltage - Google Patents
Buzzer driving circuit for enhancing driving capability in low voltage Download PDFInfo
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- CN111063330A CN111063330A CN202010056205.7A CN202010056205A CN111063330A CN 111063330 A CN111063330 A CN 111063330A CN 202010056205 A CN202010056205 A CN 202010056205A CN 111063330 A CN111063330 A CN 111063330A
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- 239000003990 capacitor Substances 0.000 claims abstract description 19
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 6
- 230000001965 increasing effect Effects 0.000 description 10
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- G—PHYSICS
- G10—MUSICAL INSTRUMENTS; ACOUSTICS
- G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
- G10K9/00—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers
- G10K9/12—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers electrically operated
- G10K9/13—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers electrically operated using electromagnetic driving means
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Abstract
The invention provides a buzzer driving circuit for enhancing driving capability at low voltage, which comprises a level conversion circuit, an NMOS driving tube, a diode D1, a voltage stabilizing diode D2 and a capacitor C. F is a frequency signal, a source electrode of the NMOS driving tube is connected with a ground wire, a drain electrode of the NMOS driving tube is connected with an output Vo, an anode of a diode D1 is connected with the output Vo, a cathode of a diode D1 is connected with a signal wire VCC, a cathode of a voltage stabilizing diode D2 is connected with the signal wire VCC, an anode of a voltage stabilizing diode D2 is connected with the ground wire, one end of a capacitor C is connected with the signal wire VCC, the other end of the capacitor C is connected with the ground wire, F is connected with a signal input of a level conversion circuit, a power wire VDD is connected with one power input of the level conversion circuit, the signal wire VCC is connected with the other power. The driving capability of the NMOS driving tube is enhanced by improving the grid voltage of the NMOS driving tube.
Description
Technical Field
The invention relates to the field of electromagnetic buzzer circuits, in particular to a buzzer driving circuit.
Background
As shown in fig. 3, in the conventional electromagnetic buzzer driving circuit, when the voltage of the power line is relatively low, the gate voltage of the buzzer driving tube is also relatively low, so that the driving capability of the buzzer driving tube is insufficient.
Disclosure of Invention
The invention provides a buzzer driving circuit for enhancing driving capability at low voltage, which aims to solve the problem of insufficient driving capability of a buzzer driving tube caused by low grid voltage ratio of the buzzer driving tube when the voltage of a power line is low.
In order to solve the above technical problems, the present invention provides a buzzer driving circuit for enhancing driving capability at low voltage, which includes a level shift circuit, an NMOS driving transistor, a diode D1, a zener diode D2, and a capacitor C. F is a frequency signal, the source electrode of the NMOS driving tube is connected with a ground wire, the drain electrode of the NMOS driving tube is connected with an output Vo, the anode of a diode D1 is connected with the output Vo, the cathode of a diode D1 is connected with a signal line VCC, the cathode of a voltage stabilizing diode D2 is connected with the signal line VCC, the anode of a voltage stabilizing diode D2 is connected with the ground wire, one end of a capacitor C is connected with the signal line VCC, the other end of the capacitor C is connected with the ground wire, the signal line F is connected with the signal input of a level conversion circuit, a power line VDD is connected with one power input of the level conversion circuit, the signal line VCC is connected with the other power input of.
In practical application, the output Vo is externally connected with a buzzer electromagnetic coil. The function of the level shift circuit is to increase the voltage swing of the frequency signal F from the power line VDD voltage to the ground voltage to the signal line VCC voltage to the ground voltage. When the NMOS drive tube is cut off, the buzzer electromagnetic coil connected with the output Vo charges the capacitor C through the diode D1 and is limited in a certain voltage range by the voltage stabilizing diode D2, when the voltage ratio of the power line VDD is lower, circuit parameters are properly designed, the voltage of the signal line VCC is larger than that of the power line VDD, after the F frequency signal is subjected to level conversion, the level swing amplitude is increased, namely the high level voltage value on the grid electrode of the NMOS drive tube is increased, and the effect of increasing the drive capability of the NMOS drive tube is achieved.
Preferably, the diode D1 may be connected in series with a resistor.
Preferably, the zener diode D2 may be replaced by other devices and combinations thereof capable of achieving a voltage stabilizing effect, such as by replacing more than one common diode in series, or by replacing the diode in series with a MOS transistor, or by replacing the diode in series with a diode connected triode, or the like.
Preferably, the substrate of the NMOS driving transistor may be connected to a ground line, or may be connected to another potential.
Preferably, the power line VDD connected to one power input of the level shift circuit may be the same signal line as the power line VDD connected to the buzzer solenoid, or may be an on-chip power signal line generated by the power line VDD connected to the buzzer solenoid.
The invention has the following beneficial effects: according to the buzzer driving circuit for enhancing the driving capability at low voltage, provided by the invention, the characteristic that the current of the electromagnetic coil of the buzzer cannot change suddenly is utilized, and when the power supply voltage is lower, the driving capability of the NMOS driving tube is enhanced by increasing the grid voltage of the NMOS driving tube. The circuit has the advantages of low cost and good performance.
Drawings
FIG. 1 is a schematic diagram of a buzzer driving circuit with enhanced driving capability at low voltage according to the present invention.
FIG. 2 is a schematic diagram of a buzzer driving circuit with enhanced driving capability at low voltage according to a first embodiment of the present invention.
Figure 3 is a background art schematic.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments.
As shown in fig. 1, the buzzer driving circuit for enhancing driving capability at low voltage provided by the present invention includes a level shift circuit, an NMOS driving transistor, a diode D1, a zener diode D2, and a capacitor C. F is a frequency signal, the source electrode of the NMOS driving tube is connected with a ground wire, the drain electrode of the NMOS driving tube is connected with an output Vo, the anode of a diode D1 is connected with the output Vo, the cathode of a diode D1 is connected with a signal line VCC, the cathode of a voltage stabilizing diode D2 is connected with the signal line VCC, the anode of a voltage stabilizing diode D2 is connected with the ground wire, one end of a capacitor C is connected with the signal line VCC, the other end of the capacitor C is connected with the ground wire, the signal line F is connected with the signal input of a level conversion circuit, a power line VDD is connected with one power input of the level conversion circuit, the signal line VCC is connected with the other power input of.
The function of the level shift circuit is to increase the voltage swing of the frequency signal F from the power line VDD voltage to the ground voltage to the signal line VCC voltage to the ground voltage.
In practical application, the output Vo is externally connected with a buzzer electromagnetic coil. When the NMOS driving transistor is turned off, as shown in fig. 1, the buzzer electromagnetic coil connected to the output Vo charges the capacitor C through the diode D1, and is limited within a certain voltage range by the zener diode D2, when the voltage ratio of the power line VDD is low, circuit parameters are properly designed, so that the voltage of the signal line VCC is greater than the voltage of the power line VDD, and after the F frequency signal undergoes level conversion, the level swing is increased, that is, the high level voltage value on the gate of the NMOS driving transistor is increased, thereby increasing the driving capability of the NMOS driving transistor.
The first embodiment of the present invention: as shown in fig. 2, the device comprises an NMOS driving transistor, a resistor R, a diode D1, a diode D2, a diode D3, a diode D4, a diode D5, a diode D6, a diode D7, a diode D8, a capacitor C, PMOS transistor P1, a PMOS transistor P2, a PMOS transistor P3, an NMOS transistor N1, an NMOS transistor N2, and an NMOS transistor N3. Wherein F is a frequency signal, the source of the NMOS driving tube is connected with the ground, the drain of the NMOS driving tube is connected with the output Vo, one end of the resistor R is connected with the output Vo, the other end of the resistor R is connected with the anode of a diode D1, the cathode of a diode D1 is connected with a signal line VCC, one end of a capacitor C is connected with the signal line VCC, the other end of the capacitor C is connected with the ground, the anode of a diode D2 is connected with the signal line VCC, the cathode of a diode D2 is connected with the anode of a diode D3, the cathode of a diode D3 is connected with the anode of a diode D4, the cathode of a diode D4 is connected with the anode of a diode D5, the cathode of a diode D5 is connected with the anode of a diode D6, the cathode of a diode D6 is connected with the anode of a diode D7, the cathode of a diode D7 is connected with the anode of a diode D8, the cathode of a diode D8 is connected, the source of an NMOS tube N1 is connected with the ground, the substrate of an NMOS tube N1 is connected with the ground, the drain of the NMOS tube N1 is connected with a signal line Fb, the gate of the NMOS tube N1 is connected with a signal line F, the source of the PMOS tube P2 is connected with a signal line VCC, the substrate of a PMOS tube P2 is connected with the signal line VCC, the drain of the PMOS tube P2 is connected with a signal line G1, the gate of the PMOS tube P2 is connected with a signal line G, the source of the NMOS tube N2 is connected with the ground, the substrate of the NMOS tube N2 is connected with the ground, the drain of the NMOS tube N2 is connected with a signal line G1, the gate of the NMOS tube N2 is connected with a signal line F, the source of the PMOS tube P3 is connected with a signal line VCC, the substrate of the PMOS tube P3 is connected with a signal line VCC, the drain of the PMOS tube P3 is connected with a signal line G, the gate of the PMOS tube P3 is connected with a signal line.
As shown in fig. 2, in conjunction with fig. 1, diode D2, diode D3, diode D4, diode D5, diode D6, diode D7 and diode D8 in fig. 2 are connected in series instead of zener diode D2 in fig. 1, and resistor R is connected in series with diode D1 instead of diode D1 in fig. 1 in fig. 2.
In practical application, the output Vo is externally connected with a buzzer electromagnetic coil. From power-up, when the frequency signal F is at high level in the first period, the voltage of the signal line G is slightly lower than the power line VDD, the NMOS driving tube is conducted, the current flows through the buzzer electromagnetic coil connected with the output Vo, when the frequency signal F is at low level, the NMOS driving tube is cut off, the buzzer electromagnetic coil connected with the output Vo charges the capacitor C through the diode D1, the device parameters in the circuit are properly designed, when the frequency signal F is at high level in the second period, the voltage of the signal line VCC is increased, the voltage of the gate of the NMOS driving tube is higher than that of the gate in the first period, the capacitor can be charged to be close to the value defined by the series connection of the diodes D2, D3, D4, D5, D6, D7 and D8, and if the power line VDD is lower, the voltage of the signal line VCC is higher than the power line VDD, and the high level voltage value of the NMOS driving tube is higher than the power line VDD, thereby increasing the driving capability of the NMOS driving tube.
In summary, the buzzer driving circuit for enhancing driving capability at low voltage provided by the invention utilizes the characteristic that the current of the electromagnetic coil of the buzzer cannot change suddenly, and plays a role in enhancing the driving capability of the NMOS driving tube by increasing the grid voltage of the NMOS driving tube when the power supply voltage is lower. The circuit has the advantages of low cost and good performance.
The above description is only an example of the present invention, and is not intended to limit the present invention, and it is obvious to those skilled in the art that various modifications and variations can be made in the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (6)
1. A buzzer driving circuit for enhancing driving capability at low voltage comprises a level conversion circuit, an NMOS driving tube, a diode D1, a voltage stabilizing diode D2 and a capacitor C. F is a frequency signal, the source electrode of the NMOS driving tube is connected with a ground wire, the drain electrode of the NMOS driving tube is connected with an output Vo, the anode of a diode D1 is connected with the output Vo, the cathode of a diode D1 is connected with a signal line VCC, the cathode of a voltage stabilizing diode D2 is connected with the signal line VCC, the anode of a voltage stabilizing diode D2 is connected with the ground wire, one end of a capacitor C is connected with the signal line VCC, the other end of the capacitor C is connected with the ground wire, the signal line F is connected with the signal input of a level conversion circuit, a power line VDD is connected with one power input of the level conversion circuit, the signal line VCC is connected with the other power input of.
2. The buzzer driving circuit for enhancing driving ability at low voltage as claimed in claim 1, wherein the level shifter circuit functions to increase the voltage swing of the frequency signal F from the power line VDD voltage to the ground voltage to the signal line VCC voltage to the ground voltage.
3. The buzzer driving circuit with enhanced driving capability at low voltage as claimed in claim 1, wherein said diode D1 may be connected in series with a resistor.
4. The buzzer driving circuit for enhancing driving ability at low voltage as claimed in claim 1, wherein said zener diode D2 can be replaced by other devices and their combination for stabilizing voltage, such as more than one common diode in series, or diode in series with MOS transistor, or diode in series with triode in series, etc.
5. The buzzer driving circuit for enhancing driving ability at low voltage as claimed in claim 1, wherein the substrate of the NMOS driving transistor can be connected to ground or other potential.
6. The buzzer driving circuit for enhancing driving ability at low voltage as claimed in claim 1, wherein said power line VDD connected to a power input of the level shifter circuit may be the same signal line as the power line VDD connected to the buzzer solenoid or an on-chip power signal line generated by the power line VDD connected to the buzzer solenoid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010056205.7A CN111063330A (en) | 2020-01-22 | 2020-01-22 | Buzzer driving circuit for enhancing driving capability in low voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010056205.7A CN111063330A (en) | 2020-01-22 | 2020-01-22 | Buzzer driving circuit for enhancing driving capability in low voltage |
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| Publication Number | Publication Date |
|---|---|
| CN111063330A true CN111063330A (en) | 2020-04-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202010056205.7A Pending CN111063330A (en) | 2020-01-22 | 2020-01-22 | Buzzer driving circuit for enhancing driving capability in low voltage |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008289066A (en) * | 2007-05-21 | 2008-11-27 | Samsung Electronics Co Ltd | Low-voltage voltage follower circuit |
| JP2012155195A (en) * | 2011-01-27 | 2012-08-16 | Yazaki Corp | Buzzer driving circuit |
| JP2013134297A (en) * | 2011-12-26 | 2013-07-08 | Panasonic Corp | Buzzer driver circuit |
| CN107947784A (en) * | 2017-10-20 | 2018-04-20 | 上海华力微电子有限公司 | A kind of high-performance output driving circuit |
| CN207381089U (en) * | 2017-11-22 | 2018-05-18 | 厦门芯阳科技股份有限公司 | A kind of piezo buzzer driving circuit |
| CN109003597A (en) * | 2018-09-25 | 2018-12-14 | 无锡华润矽科微电子有限公司 | Buzzer drive circuit and corresponding buzzer driving method |
| CN109272977A (en) * | 2018-10-25 | 2019-01-25 | 无锡十顶电子科技有限公司 | A kind of high-performance buzzer drive circuit |
| CN110492881A (en) * | 2019-08-26 | 2019-11-22 | 无锡十顶电子科技有限公司 | A kind of circuit based on buzzer stabilized driving tube grid voltage |
| CN212135944U (en) * | 2020-01-22 | 2020-12-11 | 无锡十顶电子科技有限公司 | Buzzer driving circuit for enhancing driving capability in low voltage |
-
2020
- 2020-01-22 CN CN202010056205.7A patent/CN111063330A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008289066A (en) * | 2007-05-21 | 2008-11-27 | Samsung Electronics Co Ltd | Low-voltage voltage follower circuit |
| JP2012155195A (en) * | 2011-01-27 | 2012-08-16 | Yazaki Corp | Buzzer driving circuit |
| JP2013134297A (en) * | 2011-12-26 | 2013-07-08 | Panasonic Corp | Buzzer driver circuit |
| CN107947784A (en) * | 2017-10-20 | 2018-04-20 | 上海华力微电子有限公司 | A kind of high-performance output driving circuit |
| CN207381089U (en) * | 2017-11-22 | 2018-05-18 | 厦门芯阳科技股份有限公司 | A kind of piezo buzzer driving circuit |
| CN109003597A (en) * | 2018-09-25 | 2018-12-14 | 无锡华润矽科微电子有限公司 | Buzzer drive circuit and corresponding buzzer driving method |
| CN109272977A (en) * | 2018-10-25 | 2019-01-25 | 无锡十顶电子科技有限公司 | A kind of high-performance buzzer drive circuit |
| CN110492881A (en) * | 2019-08-26 | 2019-11-22 | 无锡十顶电子科技有限公司 | A kind of circuit based on buzzer stabilized driving tube grid voltage |
| CN212135944U (en) * | 2020-01-22 | 2020-12-11 | 无锡十顶电子科技有限公司 | Buzzer driving circuit for enhancing driving capability in low voltage |
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