CN211788401U - Thick film high-power chip resistor - Google Patents
Thick film high-power chip resistor Download PDFInfo
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- CN211788401U CN211788401U CN202020744193.2U CN202020744193U CN211788401U CN 211788401 U CN211788401 U CN 211788401U CN 202020744193 U CN202020744193 U CN 202020744193U CN 211788401 U CN211788401 U CN 211788401U
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Abstract
The utility model discloses a thick film high power chip resistor, which comprises a substrate, two back electrodes of base plate backplate face are located to the interval, the three positive electrode of base plate backplate face is located to the interval, be located two resistance layers of two adjacent positive electrodes middle and partial front electrode, cover the first protective layer on the resistance layer completely, cover the second protective layer on first protective layer completely, locate the word code on the second protective layer, locate the base plate side and cover partial front electrode and back electrode's two internal electrode and cover first cladding material and second cladding material outside internal electrode and back electrode completely in proper order. The chip resistor has the capability of high power resistance by improving the process; the thickened back electrode is lengthened, the heat dissipation capability of the back electrode is improved, and the temperature rise on the surface of the resistor is reduced; the front electrode is changed into three independent blocks, so that the heat dissipation capability is improved; two thickened square resistors are used, so that the high-power resistance of the high-power-resistant resistor is improved.
Description
Technical Field
The utility model relates to a wafer resistor technical field especially relates to a thick film high power chip resistor.
Background
When the conventional RC2512 common chip resistor is used for high-power test, the phenomena of character code blackening and resistor protection layer bubbling can occur, the moisture resistance and the service life of the resistor are seriously influenced, and the phenomena of resistor resistance value over-range and resistor open circuit can occur seriously. The power of the chip resistor is not high, mainly because the following disadvantages exist in the product design and manufacturing process:
firstly, the resistance layer is arranged at the central part of the insulating substrate and is far away from the side electrode, the heat of the resistance layer is often gathered in the middle of the resistance layer, and the heat of the resistance layer is diffused from the middle to the two ends of the electrode and the side electrode, so that the problem of poor heat dissipation caused by overlong heat dissipation path exists.
When the laser resistance value of the common chip resistor is corrected, whether single-blade cutting, tool setting cutting or double-blade cutting is adopted, the laser resistance trimming has large damage to the resistance layer, and the power resistance of the resistor is reduced.
And thirdly, the common low-resistance chip resistor is manufactured in an old mode of reducing the length of the resistor layer and lengthening the lengths of the electrodes at two ends, so that the internal resistance of the electrodes at two ends is increased due to the increase of the lengths of the electrodes at two ends, and the temperature coefficient of the resistor is overlarge.
Therefore, in combination with the above-mentioned technical problems, there is a need to provide a new technical solution.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problems in the prior art, the utility model provides a thick-film high-power chip resistor, wherein RC2512 improves the process on the basis of the conventional thin insulating ceramic substrate, so that the chip resistor has the capacity of high power resistance; the length of the back electrode is lengthened, the thickness of the back electrode is thickened, two layers are printed, the heat dissipation capacity is improved, and the temperature rise of the surface of the resistor is reduced; the front electrode is changed into three independent blocks, so that the heat dissipation capacity is improved; the resistor uses two square resistors to replace the previous square resistor, changes one heat source into two heat sources, increases the thickness of the resistor layer, prints two layers and improves the high-power resistance of the resistor layer. The specific technical scheme is as follows:
the utility model discloses a thick film high power chip resistor, include:
a substrate having a front surface, a back surface and two side surfaces;
the two back electrodes are arranged on the back plate surface of the substrate at intervals;
the three front electrodes are arranged on the front plate surface of the substrate at intervals;
the two resistance layers are respectively positioned between the two adjacent front electrodes, cover part of the two resistance layers adjacent to the front electrodes, and are arranged at intervals;
a first protective layer disposed on the resistive layer and completely covering the resistive layer;
the second protective layer is arranged on the first protective layer and completely covers the first protective layer;
the character code is arranged on the second protective layer;
the two internal electrodes are respectively and symmetrically arranged on two side surfaces of the substrate, and the upper end and the lower end of each internal electrode respectively extend to the front electrode and the back electrode and respectively cover part of the front electrode and the back electrode; and
the first cladding material and the second cladding material that cover on inner electrode and the back electrode completely in proper order, the second cladding material covers completely first cladding material, just the upper and lower end of first cladding material and second cladding material extends to respectively second protective layer and base plate.
Further, the substrate is an insulating substrate.
Further, the first protective layer is a glass protective layer.
Further, the second protective layer is a resin protective layer.
Furthermore, the inner electrode is a nickel-chromium alloy vacuum plating layer or a conductive slurry layer.
Further, the first plating layer is a nickel plating layer.
Further, the second plating layer is a tin plating layer.
The utility model discloses a thick film high power chip resistor has following beneficial effect:
(1) the thick-film high-power chip resistor improves the process on the basis of the RC2512 conventional thin insulating ceramic substrate, so that the chip resistor has high-power resistance;
(2) the thick film high power chip resistor of the utility model lengthens the length of the back electrode and thickens the thickness of the back electrode, thereby improving the heat dissipation capability and reducing the temperature rise on the surface of the resistor;
(3) the thick film high power chip resistor changes the front electrode into three independent blocks, thereby improving the heat dissipation capability;
(4) the utility model discloses a thick film high power chip resistor, its resistance use two square resistance to replace a square resistance before to increase the thickness of resistance layer, improve its ability of nai high power.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings needed for the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of the chip resistor of the present embodiment;
fig. 2 is a schematic structural diagram of the substrate obtained in step S1 in this embodiment;
fig. 3 and 4 are schematic structural diagrams of the substrate obtained in step S8 of this embodiment;
fig. 5 is a schematic structural diagram of the substrate obtained in step S13 in this embodiment;
fig. 6 is a schematic structural diagram of the substrate obtained in step S16 in this embodiment;
fig. 7 is a schematic structural diagram of the substrate obtained in step S17 in this embodiment;
fig. 8 is a schematic structural diagram of the substrate obtained in step S21 in this embodiment;
fig. 9 is a schematic structural diagram of the substrate obtained in step S24 in this embodiment.
The electrode comprises a 00-substrate, a 001-alignment line, a 002-fold line, a 10-back electrode, a 20-front electrode, a 30-resistance layer, a 40-first protective layer, a 401-knife edge, a 50-second protective layer, a 60-character code, a 70-inner electrode, an 80-first plating layer and a 90-second plating layer.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary and intended to be used for explaining the present invention, and should not be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present invention. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
Examples
Referring to fig. 1 to 9, fig. 1 is a schematic structural diagram of a chip resistor according to the present embodiment; fig. 2 is a schematic structural diagram of the substrate obtained in step S1 in this embodiment; fig. 3 is a schematic structural diagram of the substrate obtained in step S2 in this embodiment; fig. 4 is a schematic structural diagram of the substrate obtained in step S6 in this embodiment; fig. 5 is a schematic structural diagram of the substrate obtained in step S11 in this embodiment; fig. 6 is a schematic structural diagram of the substrate obtained in step S14 in this embodiment; fig. 7 is a schematic structural diagram of the substrate obtained in step S17 in this embodiment; fig. 8 is a schematic structural diagram of the substrate obtained in step S21 in this embodiment; fig. 9 is a schematic structural diagram of the substrate obtained in step S22 in this embodiment.
As shown in fig. 1, the thick film high power chip resistor of the present embodiment includes:
a substrate 00 having a front plate surface, a back plate surface and two side surfaces;
two back electrodes 10 provided on the back surface of the substrate 00 at an interval;
three front electrodes 20 provided on the front surface of the substrate 00 at intervals;
two resistance layers 30 respectively located between two adjacent front electrodes 20 and covering a part of the adjacent front electrodes 20, wherein the two resistance layers 30 are arranged at intervals;
a first protective layer 40 provided on the resistive layer 30 and completely covering the resistive layer 30;
a second protective layer 50 provided on the first protective layer 40 and completely covering the first protective layer 40;
a character code 60 provided on the second protective layer 50;
two internal electrodes 70 symmetrically disposed on two side surfaces of the substrate 00, wherein upper and lower ends of each internal electrode 70 extend to the front electrode 20 and the back electrode 10, and respectively cover a portion of the front electrode 20 and the back electrode 10; and
the first plating layer 80 and the second plating layer 90 sequentially and completely cover the inner electrode 70 and the back electrode 10, the second plating layer 90 completely covers the first plating layer 80, and the upper and lower ends of the first plating layer 80 and the second plating layer 90 respectively extend to the second protective layer 50 and the substrate 00.
In this embodiment, the substrate 00 is an insulating substrate. Preferably, the substrate 00 is an insulating ceramic substrate and is an RC2512 conventional thin substrate. The dimensions were 70mm by 60mm by 0.55 mm.
In this embodiment, the first protection layer 40 is a glass protection layer.
In this embodiment, the second protective layer 50 is a resin protective layer.
In this embodiment, the inner electrode 70 is a nichrome vacuum plating layer or a conductive paste layer.
In this embodiment, the first plating layer 80 is a nickel plating layer.
In this embodiment, the second plating layer 90 is a tin plating layer.
The embodiment also provides a manufacturing method of the thick-film high-power chip resistor, which comprises the following steps:
s1: providing a substrate 00, wherein the substrate 00 is provided with a front plate surface and a back plate surface, the front plate surface and the back plate surface of the substrate 00 are respectively provided with a plurality of vertical row strip lines 001 and transverse folded grain lines 002 which are symmetrically arranged, and a plurality of grid-shaped areas are respectively formed on the front plate surface and the back plate surface, as shown in fig. 2.
S2: along the row lines 001 on the back plate surface, silver paste is printed on the back plate surface of the substrate 00 in each grid area in a screen printing mode, and two independent silver paste layers are formed in each grid area. Compared with the common chip resistor, the silver paste layer printed on the back plate surface of the substrate 00 is lengthened. Thus, the produced lengthened back electrode 10 can improve the heat dissipation capability and reduce the temperature rise of the surface of the resistor.
S3: the substrate 00 printed in step S2 is placed in a drying oven at 190 ℃ and 180 ℃ for drying.
S4: and printing a second layer of silver paste on the silver paste layer dried in the step S3 by means of screen printing. The printed second layer of silver paste is superposed with the first layer of silver paste in position. By printing two layers of overlapped silver paste on the back plate surface of the substrate 00, a thicker back electrode 10 can be produced, the heat dissipation capability is further improved, and the temperature rise of the surface of the resistor is reduced.
S5: the substrate 00 printed in step S4 is placed in a drying oven at 190 ℃ and 180 ℃ for drying.
S6: along the row lines 001 on the front plate surface, silver paste is printed on the front plate surface of the substrate 00 in each of the grid-shaped regions by means of screen printing, and three independent silver paste layers are formed in each of the grid-shaped regions. Thus, the front electrode 20 is produced as three independent blocks, and the heat dissipation capability is improved.
S7: the substrate 00 printed in step S6 is placed in a drying oven at 190 ℃ and 180 ℃ for drying.
S8: and (4) sintering the substrate 00 dried in the step S7 in a sintering furnace at 840-860 ℃, wherein the two silver paste layers on the back plate surface form the back electrode 10, as shown in FIG. 3. The silver paste layer on the front plate surface forms a front electrode 20, as shown in fig. 4.
S9: in each of the grid regions, the resistance paste is printed on the substrate 00 between the adjacent front electrodes 20 by screen printing, and partially overlaps the upper surfaces of the front electrodes 20 to form two separate resistance paste layers. The produced chip resistor has two square resistors, and the high-power resistance of the chip resistor is obviously improved compared with the previous square resistor.
S10: the substrate 00 printed in step S9 is placed in a drying oven at 190 ℃ and 180 ℃ for drying.
S11: a second layer of resistance paste is printed on the resistance paste layer dried in step S10 by means of screen printing. The printed second layer of resistance paste is coincident with the first layer of resistance paste in position. By printing two layers of overlapping resistor paste on the front side of the substrate 00, a thicker resistor layer 30 can be produced, further improving its ability to withstand high power.
S12: the substrate 00 printed in step S11 is placed in a drying oven at 190 ℃ and 180 ℃ for drying.
S13: the substrate 00 dried in step S12 is placed in a sintering furnace at 840-860 ℃ and sintered, and the resistance paste layer forms the resistance layer 30, as shown in fig. 5.
S14: in each of the grid-like regions, a glass paste is printed on the resistive layer 30 by screen printing to form a glass paste layer completely covering the resistive layer 30.
S15: the substrate 00 printed in step S14 is placed in a drying oven at 190 ℃ and 180 ℃ for drying.
S16: the substrate 00 dried in step S15 is placed in a sintering furnace at 600 ℃ and sintered, and the glass paste layer forms the first protective layer 40, as shown in fig. 6.
S17: the first protective layer 40 and the resistive layer 30 are cut by laser, and the resistance of the chip resistor is adjusted by changing the sectional area of the resistor, so that the resistance reaches a predetermined value, as shown in fig. 7. The resulting laser cutting edge 401 is shorter than a conventional edge.
S18: in each of the grid regions, a resin paste having moisture resistance is printed on the first protective layer 40 by screen printing to form a resin paste layer completely covering the first protective layer 40.
S19: the substrate 00 printed in step S18 is placed in a drying oven at 190 ℃ and 180 ℃ for drying.
S20: a second layer of resin paste is printed on the resin paste layer dried in step S19 by means of screen printing. The printed second layer of resin paste is in registration with the first layer of resin paste.
S21: the substrate 00 printed in the step S20 is placed in a drying oven at 190 ℃ and 180 ℃ for drying, and the two layers of resin paste form the second protective layer 50, as shown in fig. 8.
S22: in each of the grid-like regions, a character code paste is printed on the second protective layer 50 by screen printing to form a character code paste layer.
S23: the substrate 00 printed in step S22 is placed in a drying oven for drying.
S24: the substrate 00 dried in step S23 is placed in a sintering furnace at 200 ℃ and sintered to form a chip resistor with the code 60, as shown in fig. 9.
S25: and folding the chip resistor formed in the step S24 into a plurality of strip resistors along each row of lines 001 on the substrate 00.
S26: and placing the strip resistor into a jig, and exposing fracture surfaces on two sides of the strip resistor.
S27: sputtering the two fracture surfaces of the strip resistor by using a vacuum sputtering machine, and forming a nickel-chromium alloy vacuum plating layer which is communicated with the front electrode 20 and the back electrode 10 on the side surface of the strip resistor; or coating conductive paste on two fracture surfaces of the strip resistor, and forming a conductive paste layer communicating the front electrode 20 and the back electrode 10 on the side surface.
S28: the chip resistor formed in step S27 is folded along each folding line 002 on the substrate 00 into a granular product, and the small white edge is screened out.
S29: and (4) sequentially plating metal nickel and tin on the front electrode 20, the back electrode 10 and the nichrome vacuum plating layer or the conductive slurry layer in a barrel plating mode to form a nickel plating layer and a tin plating layer on the granular product formed in the step (S28). The whole manufacturing process of the chip resistor is completed.
And then, carrying out a series of physical tests and electrical tests on the chip resistor.
The utility model discloses a thick film high power chip resistor has following beneficial effect:
(1) the thick-film high-power chip resistor improves the process on the basis of the RC2512 conventional thin insulating ceramic substrate, so that the chip resistor has high-power resistance;
(2) the thick film high power chip resistor of the utility model lengthens the length of the back electrode and thickens the thickness of the back electrode, thereby improving the heat dissipation capability and reducing the temperature rise on the surface of the resistor;
(3) the thick film high power chip resistor changes the front electrode into three independent blocks, thereby improving the heat dissipation capability;
(4) the utility model discloses a thick film high power chip resistor, its resistance use two square resistance to replace a square resistance before to increase the thickness of resistance layer, improve its ability of nai high power.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example" or "some examples" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by one skilled in the art.
While embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications and changes may be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (7)
1. A thick film high power chip resistor, comprising:
a substrate (00) having a front surface, a back surface, and two side surfaces;
two back electrodes (10) which are arranged on the back plate surface of the substrate (00) at intervals;
three front electrodes (20) which are arranged on the front plate surface of the substrate (00) at intervals;
the two resistance layers (30) are respectively positioned between the two adjacent front electrodes (20) and cover part of the adjacent front electrodes (20), and the two resistance layers (30) are arranged at intervals;
a first protective layer (40) provided on the resistive layer (30) and completely covering the resistive layer (30);
a second protective layer (50) provided on the first protective layer (40) and completely covering the first protective layer (40);
a code (60) provided on the second protective layer (50);
the two inner electrodes (70) are respectively and symmetrically arranged on two side surfaces of the substrate (00), the upper end and the lower end of each inner electrode (70) respectively extend to the front electrode (20) and the back electrode (10) and respectively cover part of the front electrode (20) and the back electrode (10); and
the first plating layer (80) and the second plating layer (90) on the inner electrode (70) and the back electrode (10) are completely covered in sequence, the second plating layer (90) completely covers the first plating layer (80), and the upper end and the lower end of the first plating layer (80) and the second plating layer (90) respectively extend to the second protective layer (50) and the substrate (00).
2. The thick film high power chip resistor of claim 1, characterized in that the substrate (00) is an insulating substrate (00).
3. The thick film high power chip resistor of claim 1, wherein the first protective layer (40) is a glass protective layer.
4. The thick film high power chip resistor of claim 1, wherein the second protective layer (50) is a resin protective layer.
5. The thick film high power chip resistor of claim 1, wherein the inner electrode (70) is a nichrome vacuum plated or conductive paste layer.
6. The thick film high power chip resistor of claim 1 wherein the first plating layer (80) is a nickel plating layer.
7. The thick film high power chip resistor of claim 1 wherein the second plating (90) is a tin plating.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020744193.2U CN211788401U (en) | 2020-05-08 | 2020-05-08 | Thick film high-power chip resistor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202020744193.2U CN211788401U (en) | 2020-05-08 | 2020-05-08 | Thick film high-power chip resistor |
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| CN211788401U true CN211788401U (en) | 2020-10-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112397265A (en) * | 2020-11-09 | 2021-02-23 | 扬州永星电子有限公司 | High-power precise chip resistor |
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- 2020-05-08 CN CN202020744193.2U patent/CN211788401U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112397265A (en) * | 2020-11-09 | 2021-02-23 | 扬州永星电子有限公司 | High-power precise chip resistor |
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