CN211605184U

CN211605184U - Structure of gallium nitride integrated chip

Info

Publication number: CN211605184U
Application number: CN202020506390.0U
Authority: CN
Inventors: 尹宝堂
Original assignee: Liaoning Best Semiconductor Technology Co ltd
Current assignee: Liaoning Best Semiconductor Technology Co ltd
Priority date: 2020-04-09
Filing date: 2020-04-09
Publication date: 2020-09-29
Anticipated expiration: 2030-04-09

Abstract

The utility model discloses a structure of a gallium nitride integrated chip, which comprises a luminous chip, wherein the outer surface of the luminous chip is provided with a shell for supporting and protecting the luminous chip structure, the utility model is provided with an LED chip with a reflecting chip and a shell, when in use, the limitation effect of the reinforcing block structure for reinforcing the hardness improves the bending process of the pin before the welding process of chip application is implemented, the structural strength of the edge of the shell avoids the problems that the insulating layer is damaged and the later use is influenced, and the grooves arranged on the outer surface of the electrode plate facilitate the bending and welding of the electrode plate, improve the structural strength and the connection strength of the body of the LED chip in the whole using process, effectively solve the problem that in the welding process of the existing LED chip when other components are formed, when the electrode pin is bent, other insulating materials near the electrode are prone to cracking, and the later-period leakage risk is prone to occurring.

Description

Structure of gallium nitride integrated chip

Technical Field

The utility model relates to a LED chip technical field specifically is a gallium nitride integrated chip's structure.

Background

The LED chip is also called as an LED light-emitting chip, is a core component of an LED lamp, namely a P-N junction, and has the main functions of: the electric energy is converted into light energy, and the main material of the chip is monocrystalline silicon. The semiconductor wafer is composed of two parts, one of which is a P-type semiconductor in which holes predominate and the other of which is an N-type semiconductor in which electrons predominate, but which when connected form a P-N junction therebetween. When current is applied to the wafer through the wire, electrons are pushed to the P region where they recombine with holes and then emit energy in the form of photons, which is the principle of LED light emission. The wavelength of light, namely the color of light, is determined by a material forming a P-N junction, when other illuminating components are formed by the conventional LED chips, a plurality of LED chips are required to be welded and connected on the upper surface of a circuit board to form a group, before a welding process is carried out, the electrode pins connected with the electricity are required to be bent to be in a proper shape, the electrode pins can be attached to the pins of the circuit board as far as possible to facilitate welding, but the conventional LED chips are packaged and fixed by a multi-material plastic structure outside the conventional LED chips, so that the connecting parts of the pins on a shell are easy to crack when the metal electrode pins are bent, and risks such as electric leakage in a later use process are caused.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a gallium nitride integrated chip's structure to solve the problem that proposes among the above-mentioned background art.

In order to achieve the above object, the utility model provides a following technical scheme: the structure of the gallium nitride integrated chip comprises a light-emitting chip, wherein a shell used for supporting and protecting the light-emitting chip structure is assembled on the outer surface of the light-emitting chip, an electrode plate is assembled at the outer side end of the shell, the electrode plate is electrically connected with a conducting layer inside the light-emitting chip, and a reinforcing block used for improving the structural strength near the electrode plate is sleeved on the outer surface of the outer side end of the electrode plate, which is located on the shell.

Preferably, the light emitting chip includes a support case, an inner surface of the support case is mounted with a cushion layer, and an inner surface of the cushion layer is mounted with a light emitting sheet.

Preferably, the top end of the inner side surface of the cushion layer is provided with an arc-shaped groove inclining inwards, and the top end of the arc-shaped groove is provided with a semicircular chamfer angle for improving the smoothness degree.

Preferably, an encapsulation layer encapsulating the light emitting sheet is adhered to an inner surface of the arc groove.

Preferably, the housing comprises a housing of a main insulation supporting structure, an integration port is formed in the upper surface of the housing, the integration port is assembled on the outer surface of the supporting housing, a base is integrally formed on the lower surface of the housing, and a forming groove is formed in the side surface of the base.

Preferably, the electrode plates comprise a first electrode plate and a second electrode plate, the first electrode plate and the second electrode plate are respectively electrically connected to the outer surface of the electrode at the bottom of the luminescent plate, the outer ends of the first electrode plate and the second electrode plate are respectively provided with a reinforcing block with higher hardness, the reinforcing block is adhered to the inner surface of the forming groove in a hot melting mode, and grooves which are convenient to bend and improve the contact area with solder are uniformly formed in the outer surfaces of the first electrode plate and the second electrode plate.

Compared with the prior art, the beneficial effects of the utility model are that: the utility model discloses a LED chip with reflection of light chip and shell has been set up, when using, the restriction effect through the boss structure of strengthening the hardness, improve before the chip uses the welding, the in-process of buckling of pin, the structural strength at shell edge, avoid taking place the insulating layer and damage, influence the problem that the later stage was used, and the recess of seting up through the electrode slice surface, make things convenient for buckling and welding of electrode slice, improve the whole structural strength and the joint strength of the in-process body of using of LED chip, the effectual welding process of solving current LED chip when constituteing other components, the electrode pin causes other insulating material ftractures near the electrode easily when the bending to cause the problem that the later stage takes place the electric leakage risk easily.

Drawings

Fig. 1 is a schematic structural diagram of the present invention.

Fig. 2 is an assembly schematic diagram of the present invention.

Fig. 3 is a schematic view of the light emitting chip of the present invention.

Fig. 4 is an enlarged view of a structure shown in fig. 3.

Fig. 5 is a schematic view of the structure of the housing of the present invention.

In the figure: 1. light-emitting chip, 11, support shell, 12, bed course, 13, packaging layer, 14, light-emitting piece, 15, arc recess, 16, chamfer, 2, shell, 21, casing, 22, base, 23, integrated mouth, 24, first electrode piece, 25, second electrode piece, 26, shaping groove, 27, boss, 28, recess.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Referring to fig. 1-4, the present invention provides a technical solution: a structure of a gallium nitride integrated chip comprises a light-emitting chip 1, wherein the outer surface of the light-emitting chip 1 is provided with a shell 2 for supporting and protecting the structure of the light-emitting chip 1, the outer side end of the shell 2 is provided with an electrode plate, the electrode plate is electrically connected with a conductive layer in the light-emitting chip 1, and the outer side end of the electrode plate, which is positioned on the outer surface of the shell 2, is sleeved with a reinforcing block 27 for improving the structural strength near the electrode plate;

the utility model discloses a LED chip with reflection of light chip 1 and shell 2 has been set up, when using, the restriction effect through the boss 27 structure of strengthening hardness, improve before the chip uses the welding, the in-process of buckling of pin, the structural strength at shell edge, avoid taking place the insulating layer and damage, influence the problem that the later stage was used, and the recess 28 of seting up through the electrode slice surface, make things convenient for buckling and the welding of electrode slice, improve whole structural strength and the joint strength of the in-process body of using of LED chip, the effectual welding process of solving current LED chip when constituteing other components, the electrode pin causes other insulating material ftractures near the electrode easily when crooked and causes the problem that the later stage takes place the electric leakage risk easily.

Particularly, luminous chip 1 is including supporting shell 11, and the internal surface that supports shell 11 is equipped with bed course 12, and the internal surface of bed course 12 is equipped with luminous piece 14, the utility model discloses the luminous chip 1 that mentions is the PN junction LED luminous chip that the gallium nitride that is the most commonly used constitutes among the prior art, consequently is in the utility model discloses well luminous piece 14's luminous principle, rated voltage and with the connected mode of electrode be in the utility model discloses do not do too much to describe repeatedly.

Particularly, the arc recess 15 of inboard slope is seted up on the inboard surface top of bed course 12, semicircular chamfer 16 that improves smooth degree is seted up on the top of arc recess 15, arc recess 15 through convex is when encapsulating light-emitting piece 14 with the mode of point, the inside arc structure of arc recess 15 is when gluing the upper surface of drippage to light-emitting piece 14, the surface tension who utilizes liquid is tensile even with the liquid drop, guarantee the laminating between encapsulated layer and the bed course 12, avoid taking place the gap and cause the inside condition such as weing of light-emitting piece 14, cause the influence to the life of LED chip.

Specifically, the inner surface of the arc groove 15 is pasted with the sealing layer 13 sealing the light emitting sheet 14.

Particularly, shell 2 includes main insulation support structure's casing 21, and integrated mouth 23 has been seted up to casing 21's upper surface, and integrated mouth 23 assembles at the surface of support shell 11, and casing 21's lower surface integrated into one piece has base 22, and shaping groove 26 has been seted up to base 22's side surface, the utility model discloses the shell 2 structure that uses is an insulation plastic structure to the material structural strength of boss 27 is greater than casing 21's material structural strength.

Specifically, the electrode sheet comprises a first electrode sheet 24 and a second electrode sheet 25, the first electrode sheet 24 and the second electrode sheet 25 are respectively and electrically connected to the outer surface of the electrode at the bottom of the luminescent sheet 14, the outer ends of the first electrode sheet 24 and the second electrode sheet 25 are respectively provided with a reinforcing block 27 with high hardness, the reinforcing blocks 27 are thermally welded and adhered to the inner surface of the forming groove 26, and grooves 28 which are convenient to bend and improve the contact area with solder are uniformly formed in the outer surfaces of the first electrode sheet 24 and the second electrode sheet 25.

It is obvious to a person skilled in the art that the invention is not restricted to details of the above-described exemplary embodiments, but that it can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.

Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.

Claims

1. A structure of a gallium nitride integrated chip comprises a light emitting chip (1), and is characterized in that: the outer surface of the luminous chip (1) is provided with a shell (2) used for supporting and protecting the structure of the luminous chip (1), the outer side end of the shell (2) is provided with an electrode plate, the electrode plate is electrically connected with a conducting layer inside the luminous chip (1), and the outer side end of the electrode plate, which is positioned on the outer surface of the shell (2), is sleeved with a reinforcing block (27) for improving the structural strength near the electrode plate.

2. The structure of claim 1, wherein: the light emitting chip (1) comprises a support shell (11), wherein a cushion layer (12) is assembled on the inner surface of the support shell (11), and a light emitting sheet (14) is assembled on the inner surface of the cushion layer (12).

3. The structure of claim 2, wherein: the inner side surface top of bed course (12) is seted up inside side slope's arc recess (15), the top of arc recess (15) is seted up and is improved semicircular chamfer (16) of smoothness degree.

4. The structure of claim 3, wherein: and the inner surface of the arc-shaped groove (15) is adhered with an encapsulation layer (13) for encapsulating the light-emitting sheet (14).

5. The structure of claim 4, wherein: the shell (2) comprises a shell (21) of a main insulation supporting structure, an integration port (23) is formed in the upper surface of the shell (21), the integration port (23) is assembled on the outer surface of the supporting shell (11), a base (22) is integrally formed on the lower surface of the shell (21), and a forming groove (26) is formed in the side surface of the base (22).

6. The structure of claim 5, wherein: the electrode slice includes first electrode slice (24) and second electrode slice (25), first electrode slice (24) and second electrode slice (25) electricity respectively are connected to the electrode surface of light-emitting slice (14) bottom, the outside end of first electrode slice (24) and second electrode slice (25) all is equipped with a higher boss (27) of hardness, the internal surface at shaping groove (26) is pasted in boss (27) hot melt, recess (28) convenient to buckle and improve with solder area of contact are evenly seted up to the surface of first electrode slice (24) and second electrode slice (25).