CN211367794U - Monocrystalline furnace cover suitable for photosensitive rapid ending of large-size monocrystalline silicon - Google Patents
Monocrystalline furnace cover suitable for photosensitive rapid ending of large-size monocrystalline silicon Download PDFInfo
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- CN211367794U CN211367794U CN201921225084.3U CN201921225084U CN211367794U CN 211367794 U CN211367794 U CN 211367794U CN 201921225084 U CN201921225084 U CN 201921225084U CN 211367794 U CN211367794 U CN 211367794U
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 18
- 239000013078 crystal Substances 0.000 claims abstract description 34
- 239000007788 liquid Substances 0.000 claims abstract description 24
- 239000011521 glass Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000001556 precipitation Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 17
- 230000008569 process Effects 0.000 abstract description 10
- 230000008859 change Effects 0.000 abstract description 7
- 206010070834 Sensitisation Diseases 0.000 abstract description 6
- 230000008313 sensitization Effects 0.000 abstract description 6
- 239000002994 raw material Substances 0.000 abstract description 3
- 239000002699 waste material Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007906 compression Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
The utility model relates to a single crystal furnace cover suitable for quick ending of jumbo size monocrystalline silicon sensitization, used on the single crystal furnace, can monitor liquid level light ring luminance in the single crystal furnace, judge liquid level temperature, adjust the speed of drawing according to real-time temperature and carry out ending, through the control to liquid level luminance in the single crystal furnace, obtain the information of liquid level temperature change, cooperate with the speed of drawing to realize the purpose of quick ending, make the ending process more nimble, both guarantee the effective dislocation that reduces, can not cause the waste of raw materials again; in addition, the automatic ending can be realized through real-time data change, the efficiency is higher compared with that of manual experience judgment, and the method is more suitable for batch and large-scale.
Description
Technical Field
The utility model belongs to monocrystalline silicon makes the field, especially relates to a monocrystalline furnace lid suitable for quick ending of jumbo size monocrystalline silicon sensitization.
Background
With the increasingly fierce competition of the photovoltaic industry and the continuous planning and integration of the market, the large-size monocrystalline silicon is generated; the large-size monocrystalline silicon has more advantages for assembling large-scale integrated circuits and has more remarkable cost reduction strategy for enterprises. The end process of the monocrystalline silicon in the drawing process can effectively reduce the impact of thermal stress, thereby reducing dislocation, improving the yield and effectively reducing cost.
Among the prior art, can only carry out blind receipts when ending, draw the speed through predetermined assorted heating temperature and single crystal and carry out the ending, the improvement of aassessment and scheme is carried out to the ending condition again to the ending condition after the ending, the staff also can carry out preliminary judgement to the ending condition through the window, but at straight draw jumbo size monocrystalline silicon ending in-process, because the big diameter width's of silicon rod size reason can lead to the sight to be obstructed, and the later stage of ending more, the sight is obstructed more serious, it has certain difficulty to want to judge the ending purpose that is more economical according to the ending shape. When the effect of point ending is achieved, the ending time is too long, the ending efficiency is low, and the dislocation is increased on the contrary if the time is too long; blind collection can also achieve the purpose of effectively reducing dislocation, the time of over-compression ending can lead to breakage, dislocation can not be effectively reduced, and yield and output can be influenced.
Disclosure of Invention
In order to solve the technical problem, the utility model provides a monocrystalline furnace lid suitable for quick ending of jumbo size monocrystalline silicon sensitization.
The utility model adopts the technical proposal that: a single crystal furnace cover suitable for photosensitive rapid ending of large-size monocrystalline silicon is provided with a photosensing instrument, and the photosensing instrument faces to the liquid level in the monocrystalline furnace.
Preferably, a window is arranged on the cover of the single crystal furnace, and the photosensizer is arranged outside the window.
Preferably, the middle part of the window is gold-separated glass.
Preferably, the light-sensitive instrument is connected to an analysis device.
Preferably, the photoreceptor is directed toward the center of the liquid surface within the single crystal furnace.
The utility model has the advantages and positive effects that: the liquid level brightness in the single crystal furnace is monitored, the liquid level temperature change information is obtained, and the aim of quick ending is fulfilled by matching with the pulling speed, so that the ending process is more flexible, dislocation is effectively reduced, and raw materials are not wasted; in addition, the automatic ending can be realized through real-time data change, the efficiency is higher compared with that of manual experience judgment, and the method is more suitable for batch and large-scale.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the present invention.
In the figure:
1. single crystal furnace 2, liquid level 3 and window
4. Light sensitive instrument
Detailed Description
As shown in figure 1, the utility model relates to a single crystal growing furnace 1 lid suitable for quick ending of jumbo size monocrystalline silicon sensitization is covered and is equipped with the photosensizer 4, and liquid level 2 in the single crystal growing furnace 1 of photosensizer 4 orientation, directional light ring scope, 2 light ring luminance of liquid level in the single crystal growing furnace 1 can be surveyd in real time to 2 temperatures of feedback liquid level provide the foundation for ending the adjustment of drawing speed. A window 3 is arranged on a cover of the existing single crystal furnace 1, so that operators can observe the conditions in the single crystal furnace 1 conveniently, a light-sensitive instrument 4 can be arranged on the outer side of the window 3, the middle part of the window 3 is made of gold-precipitating glass, the light transmittance is good, the eyes of the operators during observation are avoided, the brightness identification of the light-sensitive instrument 4 is not influenced, the light-sensitive instrument 4 points to the center of a liquid level 2 in the single crystal furnace 1, and the liquid level 2 is observed from the angle of the window 3; the light sensor 4 is connected with an analysis device which can convert brightness information into temperature information, and the analysis device can be a processor, a single chip microcomputer or a module in a control system as long as the brightness information output by the light sensor 4 can be converted into the temperature information.
The existing ending is mainly realized according to the optimization of process parameters, and the diameter of the tail part is reduced to the ending point by adjusting the drawing speed, the temperature compensation and the crucible rotation, so that the ending purpose is realized; however, the ending technique relying entirely on process parameters is too limited if the thermal field changes and the single crystal diameter changes require new ending parameters to match. Particularly, the original equipment is used for producing large-size monocrystalline silicon, and the original ending process can not be used completely due to the increase of the size, so that a new ending process needs to be searched.
The single crystal furnace 1 cover for the large-size monocrystalline silicon photosensitive rapid ending can assist a large-size silicon rod to achieve rapid ending, an optimal ending process is rapidly obtained, temperature change information is fed back according to the change of the brightness of the liquid level 2, the pulling speed in the ending process is adjusted according to the temperature change condition, dislocation is effectively avoided, the quick ending can be completed, excessive raw materials are prevented from being wasted, and the dislocation increased due to overlong ending time is also avoided. The method comprises the following specific steps:
firstly, a light sensor 4 observes the brightness of the liquid level 2 of the single crystal furnace 1;
secondly, the analysis device connected with the light sensor 4 converts the acquired brightness information into temperature information;
thirdly, a control system connected with the single crystal furnace 1 and the analysis device adjusts the pulling speed according to the temperature information;
and (5) repeatedly implementing the step one, the step two and the step three in sequence until the ending is finished.
And converting the luminance information into temperature information in the second step specifically through a luminance temperature conversion standard, wherein the luminance information and the temperature information in the luminance temperature conversion standard correspond to each other one by one. The brightness and temperature conversion standard is obtained by being established in advance through tests, firstly, the brightness is divided into 3-7 grades, the middle grade is set to be 0-grade brightness, the middle grade is respectively + 1-grade brightness, + 2-grade brightness and + 3-grade brightness in the brighter direction, the middle grade is respectively-1-grade brightness, -2-grade brightness and-3-grade brightness in the darker direction, and the brightness of a light ring is calibrated when the thermal field is 1300SP under the condition that the 0-grade brightness is set to be full crucible material; and increasing the brightness level by 10SP when the temperature of the thermal field rises, and decreasing the brightness level by 10SP when the temperature of the thermal field decreases. And (4) comparing the aperture brightness and the temperature of each level one by one to prepare a brightness-temperature conversion standard.
Wherein, in the third step, the pulling speed is reduced by 5-10mm/h when the temperature of the thermal field rises by 10SP, and the pulling speed is increased by 5-10mm/h when the temperature of the corresponding thermal field is reduced by 10 SP.
Embodiments of the present invention will be described below with reference to the accompanying drawings.
Example 1:
a single crystal furnace 1 cover suitable for large-size monocrystalline silicon photosensitive rapid ending is provided, a photosensitive instrument 4 is arranged on the single crystal furnace 1 cover, the photosensitive instrument 4 faces to a liquid level 2 in the single crystal furnace 1, and the photosensitive instrument 4 points to the center of the liquid level 2 in the single crystal furnace 1; a window 3 is arranged on the cover of the single crystal furnace 1, gold precipitation glass is arranged in the middle of the window 3, a light sensor 4 is arranged outside the window 3, and the light sensor 4 is connected with an analysis device; the analysis device is a singlechip and is connected with a control system of the single crystal furnace 1.
Example 2:
a sensitization rapid ending method suitable for large-size monocrystalline silicon is characterized in that a sensitization instrument 4 is arranged on a cover of a monocrystalline furnace 1, the aperture brightness of a liquid level 2 in the monocrystalline furnace 1 is monitored, the temperature of the liquid level 2 is judged, and the pulling speed is adjusted according to the real-time temperature to carry out ending.
The method comprises the following specific steps:
firstly, a light sensor 4 observes the brightness of the liquid level 2 of the single crystal furnace 1;
secondly, the analysis device connected with the light sensor 4 converts the acquired brightness information into temperature information according to a brightness temperature conversion standard;
and step three, a control system connected with the single crystal furnace 1 and the analysis device adjusts the pulling speed according to the temperature information, the pulling speed is reduced by 5-10mm/h when the temperature of the thermal field rises by 10SP, and the pulling speed is increased by 5-10mm/h when the temperature of the corresponding thermal field is reduced by 10 SP.
And (5) repeatedly implementing the step one, the step two and the step three in sequence until the ending is finished.
Example 3:
the luminance and temperature conversion standard is obtained by being formulated in advance through experiments, firstly, the luminance is divided into 7 grades, the middle grade is set to be 0-grade luminance, the + 1-grade luminance, the + 2-grade luminance and the + 3-grade luminance are respectively set in the brighter direction, the-1-grade luminance, the-2-grade luminance and the-3-grade luminance are respectively set in the darker direction, and the luminance of the light ring is 144-grade and 150 cd/m-grade when the calibration thermal field is 1300SP under the condition that the 0-grade luminance is set to be full of crucible material2Set to 0 level brightness; +1 level brightness is the aperture brightness when the thermal field temperature is 1305SP, +2 level brightness is the aperture brightness when the thermal field temperature is 1310SP, +3 level brightness is the aperture brightness when the thermal field temperature is 1315SP, 1 level brightness is the aperture brightness when the thermal field temperature is 1295SP, 2 level brightness is the aperture brightness when the thermal field temperature is 1290SP, 3 level brightness is the aperture brightness when the thermal field temperature is 1285SP, and the specific corresponding information is shown in Table 1
TABLE 1
Example 4
The light sensor 4 observes the aperture brightness of the liquid level 2 in the single crystal furnace 1, deduces the aperture brightness level according to the brightness temperature conversion standard so as to judge the temperature of the thermal field, and adjusts the pulling speed according to the temperature of the thermal field, wherein the specific corresponding information is shown in the table 2.
TABLE 2
For example, the aperture luminance is measured as 141.5cd/m2And judging that the thermal field temperature is about 1305SP, and adjusting the pulling speed to about 80 in order to adapt to the thermal field temperature at the moment, so that the pulling speed is adjusted according to the ending real-time temperature, the ending quality is ensured, and the ending length can be limited to the maximum extent.
The embodiments of the present invention have been described in detail, but the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All the equivalent changes and improvements made according to the application scope of the present invention should still fall within the patent coverage of the present invention.
Claims (2)
1. A monocrystalline furnace cover suitable for photosensitive rapid ending of large-size monocrystalline silicon is characterized in that: the single crystal furnace is characterized in that a light sensor is arranged on the single crystal furnace cover, a window is arranged on the single crystal furnace cover, the light sensor is arranged on the outer side of the window, the light sensor faces the liquid level in the single crystal furnace and points to an aperture of the liquid level in the single crystal furnace, and the light sensor is connected with an analysis device.
2. A monocrystalline furnace cover suitable for photosensitive rapid ending of large-size monocrystalline silicon according to claim 1, wherein: the middle part of the window is gold precipitation glass.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921225084.3U CN211367794U (en) | 2019-07-31 | 2019-07-31 | Monocrystalline furnace cover suitable for photosensitive rapid ending of large-size monocrystalline silicon |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921225084.3U CN211367794U (en) | 2019-07-31 | 2019-07-31 | Monocrystalline furnace cover suitable for photosensitive rapid ending of large-size monocrystalline silicon |
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| CN211367794U true CN211367794U (en) | 2020-08-28 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112301421A (en) * | 2019-07-31 | 2021-02-02 | 内蒙古中环光伏材料有限公司 | Photosensitive rapid ending method suitable for large-size monocrystalline silicon |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112301421A (en) * | 2019-07-31 | 2021-02-02 | 内蒙古中环光伏材料有限公司 | Photosensitive rapid ending method suitable for large-size monocrystalline silicon |
| CN112301421B (en) * | 2019-07-31 | 2024-05-17 | 内蒙古中环光伏材料有限公司 | Photosensitive rapid ending method suitable for large-size monocrystalline silicon |
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Effective date of registration: 20210618 Address after: 300384 No.12 Haitai East Road, Huayuan Industrial Zone, New Technology Industrial Park, Binhai New Area, Tianjin Patentee after: TIANJIN ZHONGHUAN SEMICONDUCTOR Co.,Ltd. Address before: 010070 No.15 Baolier street, Saihan District, Hohhot, Inner Mongolia Autonomous Region Patentee before: INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL Co.,Ltd. |
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Address after: 300384 No.12 Haitai East Road, Huayuan Industrial Zone, New Technology Industrial Park, Binhai New Area, Tianjin Patentee after: TCL Zhonghuan New Energy Technology Co.,Ltd. Address before: 300384 No.12 Haitai East Road, Huayuan Industrial Zone, New Technology Industrial Park, Binhai New Area, Tianjin Patentee before: TIANJIN ZHONGHUAN SEMICONDUCTOR CO.,LTD. |