CN103834991A - Open-loop power self-control crystal growth control method without temperature signal treatment - Google Patents
Open-loop power self-control crystal growth control method without temperature signal treatment Download PDFInfo
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- CN103834991A CN103834991A CN201410085969.3A CN201410085969A CN103834991A CN 103834991 A CN103834991 A CN 103834991A CN 201410085969 A CN201410085969 A CN 201410085969A CN 103834991 A CN103834991 A CN 103834991A
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Abstract
The invention discloses an open-loop power self-control crystal growth control method without temperature signal treatment. In the method, a power open loop control system of a shoulder putting process step and a power open loop control system of an equal-diameter process step are utilized, a direct control power control mode is adopted to avoid signal evaluation and treatment of a temperature signal tester, a power control module is directly adopted to perform a closed loop control mode and supplement each other with a diameter casting speed closed loop control mode in order to form a unique crystal power control mode, thereby effectively solving the condition of crystal growth failure resulting from abnormal power fluctuation and temperature impact in a monocrystalline silicon rod growth process, greatly improving the continuity of the monocrystalline silicon rod, improving the production efficiency, perfecting the anti-interference performance, reducing the production cost (about 25%) and greatly improving the yield of the product (about 32%).
Description
Technical field
The present invention relates to CZ Czochralski method mono-crystal furnace Controlling System and manufacture field, especially without processes temperature signal open loop type power automatic control crystal growth control method.
Background technology
In daily life, silicon single-crystal can be described as ubiquitous.TV, computer, phone, refrigerator, wrist-watch, automobile, to such an extent as to space shuttle, spaceship, man-made satellite etc. all will be using crystalline silicons as must indispensable starting material.Particularly indicate the beginning of green energy resource revolution---invention and the application of solar cell, not only show that the utilization of sun power crystalline silicon will spread to worldwide, also indicating that the demand of silicon materials will increase day by day.Because the multiple advantage of silicon single-crystal increases sharply the growth apparatus of silicon single-crystal and the demand of Controlling System, the technique to its growth apparatus and Controlling System and technology are had higher requirement simultaneously.
Silicon monocrystal growth process is time consumption and energy consumption, under normal circumstances, silicon single crystal is made and is needed more than three days or three days continuous operation time to end product from the production that feeds intake, during this except needs expend a large amount of electric energy and argon gas equal energy source, manpower is also important running stores, traditional single crystal growing furnace is because level of automation is inadequate, in whole production process, every single crystal growing furnace all needs three to four people to take turns at keeping watch to guarantee that single crystal growing furnace can run without interruption, and need the suitable operative technique means of artificial grasp just can reach certain silicon single crystal specification of quality, in talent training and the floating of professionals, have so certain restricted.At present domestic crystalline silicon growth Semi-automatic control system, only can realize isometrical automation technolo, and the processing steps such as other examination temperature, seeding, shouldering, ending need omnidistance human intervention, and control mass ratio is poor and need several individuals to monitor a machine simultaneously.But rapidly universal along with computer technology, makes product miniaturization and intellectuality in industry become possibility.
In silicon rod production, the temperature of well heater and silicon melt is most important to the growth of monocrystalline, the fluctuation of temperature can cause the variation of pulling rate or diameter excessive, increase the possibility of the disconnected rib of monocrystalline, thereby the yield rate that has reduced product has increased cost, but aspect temperature control modules, what most of producer adopted remains analog temperature whistle control system, principle of work is as shown in Figure 1: the temperature signal comparison that the signal spreading out of from thermometer and controller provide, its error signal is by amplifying post-sampling input PID setter, enter triggering device from the signal of controller output, to realize the change to thyristor operating angle on cowling panel, control heater Graphite Electrodes voltage, reach the object of controlling temperature.
But in use, particularly CZ method technique today with rapid changepl. never-ending changes and improvements, thermal field size has experienced the development course of 12,14,16 cun, 18 cun, 20 cun, 22 cun, 24 cun, and single stove charging capacity is also from the transition of 12kg, 30kg, 45kg, 60kg, 90kg, 120kg, 150kg, 220kg.Thermal field size is larger, temperature variation in growth furnace is also increasing, temperature range gradient increases relatively, undesired signal that traditional infrared thermometer is received is more and more, causes temperature signal distortion, causes signal carrying out occurring wrong input in treating processes, cause the situation of abnormal fluctuation of power, produce heat impact and cause crystal to be grown unsuccessfully, cause crystal processing discontinuous, reduce production efficiency.
Summary of the invention
A kind of open loop type power automatic control crystal production system without processes temperature signal of the main proposition of the present invention, solve abnormal fluctuation of power in silicon single crystal rod process of growth and temperature shock and cause the crystal failed situation of growing, improve significantly the serialization of crystal silicon rod, enhance productivity.
The technical solution adopted in the present invention is as follows:
A kind of without processes temperature signal open loop power automatic control crystal growth control method, comprise crystal growing furnace, described crystal growing furnace comprises crucible and graphite heater that solution is housed, it is characterized in that: in the shouldering process of crystal growth, also comprise without temperature signal shouldering power control system, described without temperature signal shouldering power control system according to crystal growing furnace thermal field situation and product situation and the setting power slope programming of shouldering time, regulate algorithm process and calculation result is outputed to heating circuit this signal in conjunction with PID, the power control signal of the output of heating circuit transforms the heating power device that outputs to graphite heater by D/A change-over circuit, the crucible that solution is housed is carried out to temperature adjustment, when isodiametric growth of crystal, also comprise without the isometrical power control system of temperature signal, described comprise and measure in stove the pulling rate control diameter part of crystal diameter variable signal in crystal production process without the isometrical power control system of temperature signal, capability correction unit, power control unit, infrared caliper is measured crystal diameter in crystal growing furnace and observed value is outputed to the diameter measurement circuit of pulling rate control diameter part, described pulling rate control diameter part output terminal connects whole crystal to be drawn high speed circuit feedback adjustment crystal and draws high speed, crystal after described adjustment draws high speed and send to capability correction unit and power control unit after average algorithm is processed, described power control unit adopts pid control algorithm to calculate crystal and draws high the relation between speed and heating power, and export heating power and adjust signal feedback to described graphite heater heating quartz crucible.
Described power control unit is according to the length of setting in programming, and slope carries out power lifting, implements by the pattern of setting power, PID adjusting, heating circuit, D/A module, heater power.
Described capability correction unit is measured and accumulative total the carrying out of average pull rate in certain period by A/D module, the length of setting in contrast programming, pulling rate carries out infinitesimal analysis calculating, carry out PI adjusting, calculating power compensating value at that time and the setting slope of power control unit superposes, carry out, after power slope correction, carrying out the output of heating circuit.
Described diameter pulling rate control unit by the signal measurement of infrared caliper, is inputted laggard row operation through A/D, and sets diameter contrast and carries out the adjusting of PID controller, carries out power amplifier export alignment circuit to and carry out speed output by D/A.
Advantage of the present invention is:
The present invention passes through without processes temperature signal, independent development power open-loop control system, adopt power directly to control pattern, signal value and the processing of temperature signal tester are avoided completely, directly adopt power control module to carry out closed loop control mode, complement each other with diameter pulling rate closed loop control mode, form unique crystal power control mode, thereby effectively solve abnormal fluctuation of power in silicon single crystal rod process of growth and temperature shock and cause the crystal failed situation of growing, improve significantly the serialization of crystal silicon rod, enhance productivity, improve interference free performance, when having reduced production cost (approximately 25%), increase substantially finished product rate (approximately 32%).
Brief description of the drawings
Fig. 1 traditional way temperature controlling system schematic diagram;
The general temperature acquisition schematic diagram of Fig. 2;
The general A/D converter schematic diagram of Fig. 3;
Fig. 4 shouldering power open loop control unit schematic diagram;
The isometrical power open-loop control system of Fig. 5 schematic diagram.
Embodiment
A kind ofly comprise the power open-loop control system of shouldering processing step and the power open-loop control system of isometrical processing step without processes temperature signal open loop power automatic control crystal growth control method;
The power open-loop control system of described shouldering processing step is set programming, power control list by power slope
Unit's composition;
Set programming according to the shouldering power slope of carrying out of shouldering time, field engineer can and produce rule situation and carry out program setting according to table thermal field situation.
In shouldering process, can carry out pulling rate according to practical situation operator and regulate action, control crystal shouldering speed.
The power open-loop control system of described isometrical processing step is by power slope and set pulling rate programming, power control unit, capability correction unit, diameter pulling rate unit and form.
Power slope and pulling rate that described power slope and the programming of setting pulling rate are carried out according to the length of crystal growth are set programming, and field engineer can carry out program setting according to the thermal history trend of table thermal field situation and single crystal growing.
Described power control unit: according to the length of setting in programming, slope carries out power lifting, implements by the pattern of setting power, PID adjusting, heating circuit, D/A module, heater power, approaches with shouldering pattern implementation step.
Described capability correction unit: undertaken of average pull rate in certain period measured and accumulative total by A/D module, the length of setting in contrast programming, pulling rate carries out infinitesimal analysis calculating, carry out PI adjusting, calculating power compensating value at that time and the setting slope of power control unit superposes, carry out, after power slope correction, carrying out the output of heating circuit;
Described diameter pulling rate control unit: by the signal measurement of infrared caliper, input laggard row operation through A/D, and set diameter contrast and carry out the adjusting of PID controller, carry out power amplifier by D/A and export alignment circuit to and carry out speed output.
Claims (4)
1. one kind without processes temperature signal open loop power automatic control crystal growth control method, comprise crystal growing furnace, described crystal growing furnace comprises crucible and graphite heater that solution is housed, it is characterized in that: in the shouldering process of crystal growth, also comprise without temperature signal shouldering power control system, described without temperature signal shouldering power control system according to crystal growing furnace thermal field situation, product situation and shouldering time setting power slope programming signal, regulate algorithm process and calculation result is outputed to heating circuit this power slope programming signal in conjunction with PID, the power control signal of heating circuit output transforms the heating power device that outputs to graphite heater by D/A change-over circuit, the crucible that solution is housed is carried out to temperature adjustment, when isodiametric growth of crystal, also comprise without the isometrical power control system of temperature signal, described comprise and measure in stove the pulling rate control diameter part of crystal diameter variable signal in crystal production process without the isometrical power control system of temperature signal, capability correction unit, power control unit, infrared caliper is measured crystal diameter in crystal growing furnace and observed value is outputed to the diameter measurement circuit of pulling rate control diameter part, described pulling rate control diameter part output terminal connects whole crystal to be drawn high speed circuit feedback adjustment crystal and draws high speed, crystal after described adjustment draws high speed and send to capability correction unit and power control unit after average algorithm is processed, described power control unit adopts pid control algorithm to calculate crystal and draws high the relation between speed and heating power, and export heating power and adjust signal feedback to described graphite heater heating quartz crucible.
2. one according to claim 1 is without processes temperature signal open loop power automatic control crystal growth control method, it is characterized in that: described power control unit is according to the length of setting in programming, slope carries out power lifting, implements by the pattern of setting power, PID adjusting, heating circuit, D/A module, heater power.
3. one according to claim 1 is without processes temperature signal open loop power automatic control crystal growth control method, it is characterized in that: described capability correction unit is measured and accumulative total the carrying out of average pull rate in certain period by A/D module, the length of setting in contrast programming, pulling rate carries out infinitesimal analysis calculating, carry out PI adjusting, calculate power compensating value at that time and the setting slope of power control unit and superpose, carry out, after power slope correction, carrying out the output of heating circuit.
4. one according to claim 1 is without processes temperature signal open loop power automatic control crystal growth control method, it is characterized in that: described diameter pulling rate control unit is by the signal measurement of infrared caliper, input laggard row operation through A/D, with set diameter contrast and carry out the adjusting of PID controller, carry out power amplifier by D/A and export alignment circuit to and carry out speed output.
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Cited By (7)
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| CN105548990A (en) * | 2014-10-24 | 2016-05-04 | 英特希尔美国公司 | Open loop correction for optical proximity detectors |
| CN109183141A (en) * | 2018-10-29 | 2019-01-11 | 上海新昇半导体科技有限公司 | A kind of crystal growth control method, device, system and computer storage medium |
| CN110032060A (en) * | 2018-01-11 | 2019-07-19 | 西门子（中国）有限公司 | Course control method for use, process control equipment and storage medium |
| CN110528067A (en) * | 2018-05-25 | 2019-12-03 | 隆基绿能科技股份有限公司 | A kind of temprature control method of czochralski silicon monocrystal |
| CN110528068A (en) * | 2018-05-25 | 2019-12-03 | 隆基绿能科技股份有限公司 | The seeding methods and its manufacturing method of czochralski silicon monocrystal |
| CN110789744A (en) * | 2019-10-25 | 2020-02-14 | 西安航天动力试验技术研究所 | Attitude control power system thermal environment simulation test heat flow control system and method |
| US10795005B2 (en) | 2014-12-09 | 2020-10-06 | Intersil Americas LLC | Precision estimation for optical proximity detectors |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105548990A (en) * | 2014-10-24 | 2016-05-04 | 英特希尔美国公司 | Open loop correction for optical proximity detectors |
| US10795005B2 (en) | 2014-12-09 | 2020-10-06 | Intersil Americas LLC | Precision estimation for optical proximity detectors |
| CN110032060A (en) * | 2018-01-11 | 2019-07-19 | 西门子（中国）有限公司 | Course control method for use, process control equipment and storage medium |
| CN110032060B (en) * | 2018-01-11 | 2022-05-17 | 西门子能源有限公司 | Process control method, process control device, and storage medium |
| CN110528067A (en) * | 2018-05-25 | 2019-12-03 | 隆基绿能科技股份有限公司 | A kind of temprature control method of czochralski silicon monocrystal |
| CN110528068A (en) * | 2018-05-25 | 2019-12-03 | 隆基绿能科技股份有限公司 | The seeding methods and its manufacturing method of czochralski silicon monocrystal |
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| CN109183141A (en) * | 2018-10-29 | 2019-01-11 | 上海新昇半导体科技有限公司 | A kind of crystal growth control method, device, system and computer storage medium |
| CN110789744A (en) * | 2019-10-25 | 2020-02-14 | 西安航天动力试验技术研究所 | Attitude control power system thermal environment simulation test heat flow control system and method |
| CN110789744B (en) * | 2019-10-25 | 2020-11-10 | 西安航天动力试验技术研究所 | Attitude control power system thermal environment simulation test heat flow control system and method |
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Application publication date: 20140604 |