CN113755947A - Shouldering process method for drawing 12-inch single crystal - Google Patents
Shouldering process method for drawing 12-inch single crystal Download PDFInfo
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- CN113755947A CN113755947A CN202111090125.4A CN202111090125A CN113755947A CN 113755947 A CN113755947 A CN 113755947A CN 202111090125 A CN202111090125 A CN 202111090125A CN 113755947 A CN113755947 A CN 113755947A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
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- Crystallography & Structural Chemistry (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a shouldering process method for drawing 12 inches of single crystal, which comprises a length slope cooling method and a diameter cooling method, wherein the length slope cooling method and the diameter cooling method are freely switched according to the value of the seeding pulling speed, the length slope cooling method is to set a shouldering length parameter, then the pulling speed and the cooling amplitude are ensured to be constant, the pulling speed is manually adjusted according to the actual situation in a furnace until shouldering is finished, the diameter cooling method is to set a shouldering diameter parameter, the actual diameter is compared with the set value by a system, and the pulling speed is automatically adjusted according to the actual diameter value until shouldering is finished; according to the invention, two shouldering processing methods, namely a length slope cooling method and a diameter cooling method, are automatically switched within the range of the seeding pulling speed, so that the survival rate of a room is greatly improved, the number of times of seeding is reduced, the corresponding process time is greatly reduced, the consumption and energy consumption of raw materials can be effectively reduced, the shouldering processing efficiency and capacity are improved, and the production cost is reduced.
Description
Technical Field
The invention relates to the technical field of growing single crystal silicon rods by a crystal pulling method of a single crystal furnace, in particular to a shouldering process method for pulling 12 inches of single crystal.
Background
In the production of monocrystalline silicon, the current mainstream products are 9 inches and 10 inches, 12 inches of monocrystalline silicon is a newly developed product, the 12 inches of monocrystalline silicon has the advantages of large size, excellent area, high conversion efficiency and the like, and will gradually become the mainstream products in the future, and the production process for preparing the monocrystalline silicon by the pulling method comprises the following procedures: the method comprises the following steps of dismantling a furnace, loading, melting materials, drawing a thin neck, shouldering, shoulder rotating, isometric diameter ending and furnace stopping, wherein shouldering is the most important process in the whole crystal pulling process, the importance of shouldering is that whether shouldering succeeds or not at the beginning of pulling a single crystal is directly related to the yield and the unit yield of crystal pulling, and shouldering is the most difficult link in the whole crystal pulling process;
the existing shouldering process method has the defects of low room survival rate of the silicon single crystal rod, more times of leading and putting, greatly increased process working hours, increased consumption of raw materials and energy, direction change and cost increase, and simultaneously production efficiency and capacity are not improved, so the invention provides the shouldering process method for drawing the 12 inches single crystal to solve the problems in the prior art.
Disclosure of Invention
Aiming at the problems, the invention aims to provide a shouldering process method for pulling 12 inches of single crystals, which greatly improves the survival rate of rooms and reduces the times of leading and putting by automatically switching two shouldering methods, namely a length slope cooling method and a diameter cooling method, within the range of a seeding and pulling speed, greatly reduces the corresponding process working hours and improves the production efficiency, and the shouldering process method adopting the length slope cooling method and the diameter cooling method can effectively reduce the consumption of raw materials and the energy consumption and improve the efficiency of shouldering, thereby improving the productivity of the shouldering process and reducing the production cost.
In order to realize the purpose of the invention, the invention is realized by the following technical scheme: a shouldering process method for pulling a 12 inch single crystal comprises a length slope cooling method and a diameter cooling method, wherein the length slope cooling method and the diameter cooling method are freely switched according to the value of a seeding pulling speed, the length slope cooling method is to set shouldering length parameters, then the pulling speed and the cooling amplitude are ensured to be constant, and the pulling speed is manually adjusted according to the actual situation in a furnace until shouldering is completed;
the diameter cooling method is characterized in that shoulder diameter parameters are set, the actual diameter is compared with a set value by a system, and the pulling speed is automatically adjusted according to the actual diameter value until shoulder setting is completed.
In a further improvement, the length slope cooling method is specifically operated as follows:
step one, inputting a shouldering length parameter of monocrystalline silicon to be processed on a system page;
secondly, inputting constant parameter values of the pulling speed and the cooling amplitude on a system page;
and step three, shoulder putting is started, and the pulling speed is manually adjusted according to the actual situation while shoulder putting is carried out.
In a further improvement, the diameter cooling method is specifically operated as follows:
step one, inputting a shouldering diameter parameter of monocrystalline silicon to be processed on a system page;
step two, after the shouldering diameter parameter value is input, the system compares the actual shouldering diameter of the monocrystalline silicon with an input set value to obtain a difference value;
and step three, shoulder putting is started, and the system can automatically adjust the pulling speed according to the actual shoulder putting diameter during shoulder putting treatment.
The further improvement lies in that: the seeding pulling speed is switched to a length slope temperature reduction method at the time of 240-280mm/h, and the seeding pulling speed is switched to a diameter temperature reduction method at the time of 280-340 mm/h.
The further improvement lies in that: the length slope cooling method and the diameter cooling method both grow on the basis of a 160-inch single crystal furnace and a 36-inch thermal field, the 160-inch single crystal furnace is provided with a PLC automatic control system for controlling the temperature in the single crystal furnace, and the larger the cooling amplitude of the power set value is, the more the cooling in the single crystal furnace is.
The further improvement lies in that: the diameter cooling method takes the set drawing speed as a reference according to the difference value between the actual diameter and the set diameter, and then automatically adjusts the drawing speed according to the actual diameter value.
The further improvement lies in that: the value range of the pulling rate automatic adjustment in the diameter cooling method is a range of a product value of a set pulling rate corresponding to the length value of the shoulder-off and the maximum and minimum coefficient values of the pulling rate, wherein the maximum coefficient of the pulling rate is 1.25, and the minimum coefficient of the pulling rate is 0.8.
The invention has the beneficial effects that: according to the invention, two shouldering processing methods, namely the length slope cooling method and the diameter cooling method, are automatically switched within the range of the seeding pulling speed, so that the survival rate of a room is greatly improved, the number of times of seeding is reduced, the corresponding process working hours are greatly reduced, the production efficiency is improved, and the shouldering processing by the length slope cooling method and the diameter cooling method can effectively reduce the consumption of raw materials, reduce the energy consumption and improve the shouldering processing efficiency, so that the productivity of the shouldering process is improved, and the production cost is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic view of a single crystal silicon rod after shouldering processing in example 1 of the present invention.
FIG. 2 is a schematic view of a single crystal silicon rod after shouldering in example 2 of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1
According to the illustration in fig. 1, the embodiment provides a shouldering process method for pulling 12 inches of single crystal, which includes a length slope cooling method, wherein the length slope cooling method is to set shouldering length parameters, then ensure constant pulling speed and cooling amplitude, and manually adjust the pulling speed according to actual conditions in a furnace until shouldering is completed.
The length slope cooling method is specifically operated as follows:
step one, inputting a shouldering length parameter of monocrystalline silicon to be processed on a system page;
secondly, inputting constant parameter values of the pulling speed and the cooling amplitude on a system page;
and step three, shoulder putting is started, and the pulling speed is manually adjusted according to the actual situation while shoulder putting is carried out.
The seeding pulling speed is switched to a length slope temperature reduction method at the time of 240-280 mm/h.
The length slope cooling method is based on a 160-inch single crystal furnace and a 36-inch thermal field for growth, wherein a PLC automatic control system is arranged on the 160-inch single crystal furnace and used for controlling the temperature in the single crystal furnace, the cooling amplitude is a power set value, and the larger the power set value is, the more the temperature in the single crystal furnace is cooled.
Example 2
According to fig. 2, the embodiment provides a shouldering process for pulling 12 inches of single crystal, which includes a diameter cooling method, wherein the diameter cooling method is to set a shouldering diameter parameter, compare an actual diameter with a set value by a system, and automatically adjust a pulling speed according to the actual diameter value until shouldering is completed.
The diameter cooling method is specifically operated as follows:
step one, inputting a shouldering diameter parameter of monocrystalline silicon to be processed on a system page;
step two, after the shouldering diameter parameter value is input, the system compares the actual shouldering diameter of the monocrystalline silicon with an input set value to obtain a difference value;
and step three, shoulder putting is started, and the system can automatically adjust the pulling speed according to the actual shoulder putting diameter during shoulder putting treatment.
The seeding pulling speed is 280-340mm/h by switching a diameter cooling method.
The diameter cooling method is based on a 160-inch single crystal furnace and a 36-inch thermal field for growth, wherein a PLC automatic control system is arranged on the 160-inch single crystal furnace and used for controlling the temperature in the single crystal furnace, and the larger the cooling amplitude of the power set value is, the more the cooling in the single crystal furnace is.
The diameter cooling method takes the set drawing speed as a reference according to the difference value between the actual diameter and the set diameter, and then automatically adjusts the drawing speed according to the actual diameter value.
The value range of the pulling rate automatic adjustment in the diameter cooling method is a range of a product value of a set pulling rate corresponding to the length value of the shoulder-off and the maximum and minimum coefficient values of the pulling rate, wherein the maximum coefficient of the pulling rate is 1.25, and the minimum coefficient of the pulling rate is 0.8.
Example 3
This embodiment provides a shouldering process method for pulling 12 inches of single crystal, which enters a seeding process after the temperature adjustment is finished, and enters shouldering after the seeding is finished, wherein the shouldering process table by the length slope cooling method is as follows
Length slope cooling method process table
| Shouldering length mm | Drawing speed mm/h | Power change kw |
| 1 | 50 | -2 |
| 20 | 50 | -2.8 |
| 40 | 50 | -3.5 |
| 60 | 55 | -4.5 |
| 80 | 58 | -6 |
| 100 | 60 | -9 |
| 120 | 65 | -12 |
| 140 | 65 | -14 |
| 160 | 65 | -14.5 |
| 180 | 65 | -15 |
The power changes the cooling range promptly, and when shouldering length was 1mm, the cooling was 2kw, when shouldering length was 20mm, was 0.8kw in the basic cooling range that shouldering length was 1mm, analogizes in proper order.
Wherein the diameter cooling method should be as follows
Angle shouldering art watch
When the shouldering length is 1mm, the initial pull speed is 50mm/h, when the actual diameter is larger than the set diameter, the pull speed is adjusted to play a role, the maximum pull speed is 50 multiplied by 1.25 to 62.5mm/h, the minimum pull speed is 50 multiplied by 0.8 to 40mm/h, and the pull speed fluctuates between 40 and 62.5 according to the PID principle so as to adjust the shouldering diameter to be matched with the set diameter.
The shoulder-laying diameter is adjusted according to the actual shoulder-laying diameter, the pulling speed can be increased, the effects of automatically adjusting the pulling speed and controlling the diameter are achieved, and finally shoulder-laying is completed.
The foregoing illustrates and describes the principles, general features, and advantages of the present invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (7)
1. A shouldering process method for pulling 12 inches of single crystal is characterized in that: the method comprises a length slope cooling method and a diameter cooling method, wherein the length slope cooling method and the diameter cooling method are freely switched according to the value of the seeding pulling speed, the length slope cooling method is to set shoulder-setting length parameters, then the pulling speed and the cooling amplitude are ensured to be constant, and the pulling speed is manually adjusted according to the actual situation in the furnace until shoulder setting is completed;
the diameter cooling method is characterized in that shoulder diameter parameters are set, the actual diameter is compared with a set value by a system, and the pulling speed is automatically adjusted according to the actual diameter value until shoulder setting is completed.
2. The shouldering process for pulling a 12-inch single crystal according to claim 1, wherein the length slope cooling method is specifically operated as follows:
step one, inputting a shouldering length parameter of monocrystalline silicon to be processed on a system page;
secondly, inputting constant parameter values of the pulling speed and the cooling amplitude on a system page;
and step three, shoulder putting is started, and the pulling speed is manually adjusted according to the actual situation while shoulder putting is carried out.
3. The shouldering process for pulling a 12-inch single crystal according to claim 1, wherein the diameter cooling method is specifically operated as follows:
step one, inputting a shouldering diameter parameter of monocrystalline silicon to be processed on a system page;
step two, after the shouldering diameter parameter value is input, the system compares the actual shouldering diameter of the monocrystalline silicon with an input set value to obtain a difference value;
and step three, shoulder putting is started, and the system can automatically adjust the pulling speed according to the actual shoulder putting diameter during shoulder putting treatment.
4. The shouldering process method for pulling 12 inches of single crystal according to claim 1, wherein: the seeding pulling speed is switched to a length slope temperature reduction method at the time of 240-280mm/h, and the seeding pulling speed is switched to a diameter temperature reduction method at the time of 280-340 mm/h.
5. The shouldering process method for pulling 12 inches of single crystal according to claim 1, wherein: the length slope cooling method and the diameter cooling method both grow on the basis of a 160-inch single crystal furnace and a 36-inch thermal field, the 160-inch single crystal furnace is provided with a PLC automatic control system for controlling the temperature in the single crystal furnace, and the larger the cooling amplitude of the power set value is, the more the cooling in the single crystal furnace is.
6. The shouldering process method for pulling 12 inches of single crystal according to claim 1, wherein: the diameter cooling method takes the set drawing speed as a reference according to the difference value between the actual diameter and the set diameter, and then automatically adjusts the drawing speed according to the actual diameter value.
7. The shouldering process method for pulling 12 inches of single crystal according to claim 1, wherein: the value range of the pulling rate automatic adjustment in the diameter cooling method is a range of a product value of a set pulling rate corresponding to the length value of the shoulder-off and the maximum and minimum coefficient values of the pulling rate, wherein the maximum coefficient of the pulling rate is 1.25, and the minimum coefficient of the pulling rate is 0.8.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114717648A (en) * | 2022-04-18 | 2022-07-08 | 宁夏中欣晶圆半导体科技有限公司 | Shoulder-laying method for improving survival rate of <100> single crystal |
| CN115369480A (en) * | 2022-09-23 | 2022-11-22 | 宁夏中欣晶圆半导体科技有限公司 | 1806 furnace crystal bar pulling method |
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| CN114717648A (en) * | 2022-04-18 | 2022-07-08 | 宁夏中欣晶圆半导体科技有限公司 | Shoulder-laying method for improving survival rate of <100> single crystal |
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| CN115369480A (en) * | 2022-09-23 | 2022-11-22 | 宁夏中欣晶圆半导体科技有限公司 | 1806 furnace crystal bar pulling method |
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