CN1396965A - Method for controlling growth of silicon crystal to minimize growth rate and diameter deviations - Google Patents
Method for controlling growth of silicon crystal to minimize growth rate and diameter deviations Download PDFInfo
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- CN1396965A CN1396965A CN01804430A CN01804430A CN1396965A CN 1396965 A CN1396965 A CN 1396965A CN 01804430 A CN01804430 A CN 01804430A CN 01804430 A CN01804430 A CN 01804430A CN 1396965 A CN1396965 A CN 1396965A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
Abstract
A control method for use with a crystal puller for growing a monocrystalline semiconductor crystal from a melt according to the Czochralski process. The method includes defining an initial interval of time for observing growth of the crystal being pulled from the melt and determining diameter variations occurring during the interval. Based on the variations in the crystal diameter, the method defines a function r(t). By performing a best fit routine on the function r(t), the method deduces current values of crystal radius rf, meniscus height hf and growth rate Vgf at the end of the observation interval. The method also includes determining pull rate and heater power parameters as a function of the growth rate to control the crystal puller to minimize variations in both crystal diameter and growth rate during subsequent growth of the crystal.
Description
Background of invention
The present invention relates generally to be used for making the improvement of the single crystal semiconductor growth technique of electronic component in control, and particularly, relate to and be used for accurately control and cut the growth of krousky (Czochralski) crystal growth technique and make the deviation of growth velocity and diameter reduce to minimum method and apparatus.
Monocrystalline silicon, or silicon single crystal is the starting material that are used for making most of technologies of semi-conductor electricity sub-element.The major part of the crystal puller manufacture order crystal silicon of krousky technology is cut in application.Speak briefly, cut krousky technology and be included in fusing high purity polycrystalline silicon material in the quartz crucible, this quartz crucible is arranged in the custom-designed stove.After the crucible of heating melted the silicon material, the crystal lifting mechanism was transferred to seed crystal with molten silicon and is contacted.Then this mechanism pulling seed crystal in case from silicon melt the crystal of pulling growth.Typical crystal lifting mechanism is suspended on an end of cable with seed crystal, and the other end of cable is wound on the reel.Along with the reel rotation, seed crystal moves up and down according to the direction of reel rotation.
After forming the thin neck of crystal, process of growth increases the crystal diameter of just growing by reducing pulling rate and/or temperature of fusion, when reaching desirable diameter till.By control pulling rate and temperature of fusion, replenish the melt level that descends simultaneously, the crystalline main body is so grown, so that it has the diameter (that is it generally is columniform) of approximately constant.In process of growth near finishing but before the silicon of crucible emptying fusing, this process reduces crystal diameter gradually so that form an end awl.Usually, the end awl is to form by the heat that increases the crystal pulling rate and be added on the crucible.When diameter became enough hour, make crystal and melt extraction then.In process of growth, crucible is towards a direction rotation melt, and the crystal lifting mechanism rotates its cable that lifts in the opposite direction, or axle, and seed crystal and crystal.
Although the krousky growth technique of cutting that adopts has been suitable for being grown in silicon single crystal useful in the various application at present, but still wish to have further improvement.For example, wish in whole growth process, to make the variation of diameter and growth velocity to reduce to minimum, so that improve the crystalline shape and the quality of so growth.
The problem that makes the growth velocity deviation reduce to minimum comprises measures growth velocity reliably.In growth method commonly used, pulling rate is promoted by seed crystal and sets, and pulling rate is a known parameter.If known height at crystal-melt interface place meniscus is time-varying, then growth velocity can dynamically be determined indirectly by the check meniscus.In the ideal case, crystal ingot has a kind of perfect cylindrical shape, and pulling rate is equal to growth velocity.The two combines deviation that realizes smaller crystal diameter and prescribed value and the deviation that realizes smaller growth velocity and prescribed value.Although attempted utilizing the laser reflection of pyrometer or meniscus shape, none is used to measure the system of meniscus level reliably.
Also wish to solve the problem of unsettled crystal growth with a controller.Especially, must be by make diameter deviation reduce to minimum the to remain on growth method the duration stable crystal growth of sort controller.The person skilled in art recognizes that pulling crystal is a kind of intrinsic unsettled process from melt.Under out-of-control situation, crystal will be with taper, rather than common cylindrical growth.Active gate ring is necessary to keeping cylinder form, also means to keep pulling rate near steady-state growth speed.The fluctuation of steady-state growth speed may be relevant with the time, and may be because of different strokes and/or different crystal puller difference.
Growth method commonly used adopts two main strategies to control crystal growth.First strategy mainly relates to diameter control, and second strategy mainly relates to one " lifting of enclosed type seed crystal " and come control growing speed.Yet available system can not be controlled diameter and growth velocity simultaneously at present.
As an example, normal diameter control comes the crystal manipulation growth by two proportion integration differentiation (PID) gate rings that act on pulling rate and heater power.The main purpose of controller is to equal crystal of growth under the set(ting)value (other processing parameters of regulation such as the rotation of crystal and crucible and the existence in magnetic field) at diameter.First PID control unit works to pulling rate, so that diameter error reduces to minimum.As a secondary objective, the crystal puller controller manages to make the error between average pull rate and the set(ting)value to reduce to minimum.This is to utilize second PID gate ring that heater power is worked to finish.Under standard P lD Controlling System situation, vary in diameter can be set to the franchise of about 1mm, but with set(ting)value have bigger pulling rate deviation still might occur (such as, in addition about 30～40%).
The main purpose that seed crystal commonly used promotes Controlling System is growth velocity control.In this case, pulling rate is set to a constant prescribed value V
SetDiameter control has accessory value, and generally is to utilize a PID control unit to directly act on the heater power to finish.Although this control strategy is critically with respect to set(ting)value control pulling rate, bigger diameter deviation (such as, up to ± 5-10mm) be possible.And, even pulling rate equals V
Set, actual growth rate still has deviation, so the main purpose of growth velocity control does not reach fully.
By suitably adjusting controller, obtaining the qualified performance of growth velocity with present available Controlling System perhaps is possible.In this case, suitable adjustment is meaning and is referring to adjust various controller coefficients by a specific hot-zone configuration and the test and the error of one group of processing parameter defined from experience.This group coefficient is defined for the different piece of crystal length, so that compensation is by the variation of the hot configuration that character caused of technology in batches.Stipulated not same district number and the controller type considered, then must suitably regulate very a large amount of coefficient (such as, 50-100 or more), so that obtain qualified growth characteristics.Any variation on hot zone design or processing condition as crucible or crystal rotation or a magnetic field that applies, all can have a negative impact to controller performance.More readjust repeatedly thereby essential these variations of adaptation.In addition, the critical process to diameter and the minimum franchise of growth velocity deviation setting usually must all embody each crystal puller.New hot-zone configuration or processing condition are brought in constant renewal in the adjusting of process control parameter and optimization, controlled variable, and with the manipulation of the relevant technology of crystal puller, all be pretty troublesome and very expensive.Therefore, be reduced to and reach the necessary re-adjustments number of times of qualified processing performance or minimizing and be used in resource in process maintenance and the personalization, will in producing the high quality silicon crystal, save great amount of cost.
Owing to these reasons, hope has a kind of apparatus and method accurately and reliably that are used to control the silicon crystal growth, so that the deviation of growth velocity and diameter reduces to minimum, said apparatus and method expense are still less easier with adjustment.
The invention summary
The present invention is by providing a kind of method and apparatus, is used for making the deviation of growth velocity and diameter reduce to minimum when cutting krousky technology from crystal ingot that melt lifts out, satisfied above-mentioned needs and overcome the shortcoming of prior art.In several purposes of the present invention, can notice that this method and apparatus has reduced the controlled variable number; This method and apparatus can be determined and the irrelevant controlled variable of crystal position, hot-zone configuration, processing condition and/or crystal puller; This method and apparatus can vary in diameter according to the observation be determined controlled variable; This method and apparatus can be predicted pulling rate and the desirable intervention of power; This method and apparatus can be adjusted controlled variable between on-stream period; This method and apparatus can be derived the meniscus level dynamic change from the radius dynamic change that records; This method and apparatus can be determined the meniscus level measurement according to the meniscus level dynamic change of deriving; This method and apparatus can merge in the existing crystal pulling apparatus; And, this method can efficiently and economically implement and this device economically rationally and practicality on the market.
Speak briefly, the method for implementing each side of the present invention is to use for crystal puller, is used for according to cutting krousky technology growing single-crystal shape semiconductor crystal.Crystal puller has the crucible of the dress semiconductor melt of a heating, and crystal is grown from this melt.Crystal puller also has a well heater by the power supply power supply, is used for heating crucible.At a pulling rate V
pF, crystal is grown at the seed crystal that lifts out from melt.This method may further comprise the steps: initial time that limit to observe the crystal growth that lifts out from melt at interval; With the measurement crystal diameter, so that determine in the variation of observing the crystal diameter that takes place in the period.This method is according to the variation of crystal diameter, the existing growth velocity V when estimating crystal growth
gThis method also comprises the growth velocity V that determines with estimating
gAnd the pulling rate parameter and the heater power parameter that change.The pulling rate parameter is represented as implements the pulling rate V that the ideal crystal diameter changes to aimed dia
pIncrement change, and the heater power parameter is represented as the increment of implementing the supply heater power that the ideal crystal growth rate changes to the target growth velocity and changes.This method also comprises according to pulling rate parameter regulation pulling rate V
pWith the steps such as power of supplying with well heater according to the heater power parameter regulation by power supply.This makes after the initial observation period during subsequently the crystal growth, and the two the variation of crystal diameter and growth velocity reduces to minimum.
An alternative embodiment of the invention is the control method of using at for crystal puller, is used for according to cutting krousky technology growing single-crystal shape semiconductor crystal.Crystal puller has a crucible that the heating of semiconductor melt is housed, and crystal is grown from this solution.Crystal puller also has a well heater by the power supply power supply and is used for heating crucible.Crystal is at pulling rate V
pGrow at the seed crystal that from melt, lifts out down.When pulling crystal from melt, melt has the surface of a band meniscus near crystal.This method comprise be defined for the crystal growth that observation lifts from melt initial time at interval and measure crystal diameter so that determine the steps such as crystal diameter variation that take place in the period observing.In addition, this method comprises according to observing a crystal diameter variation definition function r (t) who takes place in the period.This function r (t) represents change in radius, and is crystal radius r, crescent moon height h and growth velocity V
gFunction to the time.This method is implemented the best-fit program to function r (t) after being included in this step, so that derive crystal radius r when the observation period finishes
f, meniscus level h
fWith growth velocity V
GfCurrency.This method also comprises according to current growth velocity V
GfControl crystal puller, so that the variation of crystal diameter and growth velocity reduces to minimum step during crystal growth subsequently.
Alternatively, the present invention can comprise various other method and systems.
Other purposes and a characteristics part are conspicuous, and a part will be pointed out below.
Brief Description Of Drawings
Fig. 1 illustrates crystal puller and according to the device part schematic block diagram that is used to control crystal puller of the present invention.
Fig. 2 is the schematic partial view that lifts silicon crystal the melt in the crystal puller that is contained in Fig. 1.
Fig. 3 illustrates in the control diagram 1 device so that produce the exemplary process diagram of the control signal that is used to control crystal puller.
Fig. 4 illustrates the crystal radius deviation to be subjected to increment in the pulling rate to change when influencing and the exemplary graph of heater power when being subjected to the device control of Fig. 1.
Fig. 5 further illustrates the crystal radius deviation to be subjected to increment in the pulling rate to change when influencing and the exemplary graph of heater power when being subjected to the device control of Fig. 1.
In institute's drawings attached, corresponding label is represented corresponding parts.
DETAILED DESCRIPTION OF THE PREFERRED
Referring now to Fig. 1,, Fig. 1 illustrates a control device, and generally with label 11 expressions, this control device 11 uses for all krousky crystal growing apparatus, and czochralski production system is generally with label 13 expressions.Crystal growing apparatus, or the detailed construction of crystal puller 13 is that these those skilled in the art are well-known.Generally, crystal puller 13 comprises the vacuum chamber 15 of a sealing crucible 19.Heating unit such as resistance heater 21 surround crucible 19.In one embodiment, thermofin 23 lining on the inwall of vacuum chamber 15 and a vacuum chamber cooling jacket chamber (not marking) that is added with water surround this vacuum chamber.The vacuum pump (not shown) normally when the inert atmosphere of argon gas is added in the vacuum chamber, is discharged gas in vacuum chamber.
According to cutting krousky single crystal growing method, with a certain amount of polymorph silicon, or polysilicon is packed in the crucible 19.Heater power source 27 provides electric current to pass through resistance heater 21, so that will feed fusing, and therefore, forms silicon melt 29, and monocrystalline 31 lifts out from this melt 29.As known in this field, monocrystalline 31 is since a seed crystal 35, and seed crystal 35 is installed to and lifts axle, or on the cable 37.As shown in Figure 1, monocrystalline draws with crucible 19 and generally has a common symmetry axis 39.One end of cable 37 is connected on the reel (not shown) by the pulley (not shown), and the other end is connected on the dop (not shown), clamping seed crystal 35 and by the crystal 31 of seeded growth.The common U.S. Patent No. of transferring the possession of 5,935,328 illustrates reel and the cable device that a kind of suitable the present invention of confession uses, and the whole disclosure of this patent herein as a reference.
In heating and crystal pulling process, crucible drive unit 43 make crucible 19 rotate (such as, toward the clockwise direction).In the growth technique process, crucible drive unit 43 is crucible up and down 19 optionally also.For example,,, represent, remain on outside the desirable height crucible drive unit 43 rising crucibles 19 with label 45 in order to make its liquid level along with melt 29 consumes.Crystal-driven device 47 is similarly towards going up rotation cable 37 in the opposite direction with the side of crucible drive unit 43 rotation crucibles 19.In addition, during growth technique, crystal-driven device 47 is optionally with respect to melt level 45 lifting crystal 3s 1.
In one embodiment, crystal puller 13 is by seed crystal 35 being dropped to the silicon that almost contacts the fusing in the melt 29 that is contained in the crucible 19, with these seed crystal 35 preheatings.After the preheating, crystal-driven device 47 continues by cable 37 seed crystal to be transferred at its melt level 45 places contact melt 29.When seed crystal 35 fusings, crystal-driven device 47 is pulled out from melt 29 lentamente, or lifts seed crystal 35.Seed crystal 35 is pulled out silicon from melt 29, so that along with seed crystal is pulled out, and growing silicon single crystal 31.When crystal-driven device 47 during from melt 29 pulling crystals 31, it is with a reference speed rate rotating crystal 31.Crucible drive unit 43 is similarly with another reference speed rate rotation crucible 19, but normally towards the direction rotation opposite with crystal 31.
Crystal-driven device 47 is that these those skilled in the art are well-known.Generally, drive unit 47 comprises the axle and reel mechanical coupling of this electric motor of electric motor (not shown) with it.Although this mechanical coupling can comprise between axle and the reel and directly connecting that preferred the arrangement is one group of step down gear to be set between the two at them be used for controlling better and operation more stably.Therefore electric motor can and be rolled cable 37 by the reel introducing, is used for seed crystal 35 being transferred to melt 29 and being used for lifting crystal ingot 31 from melt 29.
Originally control device 51 is controlled and is pulled out, or pull rate and power supply 27 be added to the power of well heater 21, so that form the thin neck down of crystal 31.Preferably, along with seed crystal 35 is pulled out from melt 29, crystal puller 13 makes thin neck to be constant growth in thickness basically.For example, control device 51 keeps one to be that the thin neck diameter of constant is about 5% of desirable main diameter basically.In the control mode of routine, after thin neck reached desirable length, control device 51 was regulated rotation, lifted and/or parameter such as heating, reached desirable crystalline body diameter so that the diameter of crystal 31 is increased in the taper mode.For example, control device 51 reduces pulling rate, so that form an outside open zone, this zone is referred to as crystalline cone usually.In case reach desirable crystal diameter, control device 51 is with regard to the control growing parameter, so that measured as system 11, keeps relatively constant diameter, till this process is during near its end.In that, normally increase pulling rate and heating, be used to reduce diameter, so that form a tapered section in the end of monocrystalline 31.
The common U.S. Patent No. of transferring the possession of 5,178,720, its whole disclosures disclose a kind of preferred method herein in the lump as a reference, are used for the variation control crystal of crystal diameter and the speed of rotation of crucible.The common U.S. Patent No. of transferring the possession of 5,882,402, U.S. Patent No. 5,846,318, U.S. Patent No. 5,665,159 and U.S. Patent No. 5,653,799, their whole disclosures herein in the lump as a reference, these patents provide the measuring method accurately and reliably of many crystal growth parameters, comprising crystal diameter.In these patents, an image processor is handled the image of crystal-melt interface, so that determine diameter.Patent application No.09/372 at the common transfer of on August 12nd, 1999 application, 897 its whole disclosures herein as a reference, this patent application has been told about according to a predetermined velocity profile, perhaps at the target that is used for controlling crystal " technological method " defined that defective forms, accurately pulling single crystal silicon ingot from melt.
Fig. 2 is illustrated in seed crystal 35 fusings and the sagging middle situation of crystal growing process afterwards.After forming the thin neck of crystal, typical method is by reducing pulling rate and/or melt temperature, making the enlarged-diameter of the crystal 31 of growing, till reaching desirable diameter.This part of increase diameter is called crystalline cone, or brilliant hat.When crystalline cone is increased to desirable diameter, the crystalline substance shoulder that it is main body that crystal 31 forms a back.When melt 29 approaching running out, reduce crystal diameter gradually, what the result formed crystal 31 generally is the end awl of taper.In case the diameter of end awl enough little (such as, 2mm-4mm), just can finish that crystal 31 and melt 29 are broken away from, do not spread on the main body of crystal 31 and can not make to misplace.Take out crystal 31 from vacuum chamber 15 then and be used to be processed into wafer.By control pulling rate and melt temperature.The melt level that replenish to descend simultaneously, the main body of crystal 31 is so grown, so that it has the diameter of an approximately constant, and what constitute crystalline silicon generally is cylinder-shaped body (such as, crystal ingot).
Along with crystal-driven device 47 31, one liquid meniscus 55 of pulling crystal formation at the interface between crystal 31 and melt 29 from melt 29.Liquid meniscus 55 forms on the surface 57 of melt 29.As known in this field, near the bright ring of crucible 19 inverted image on the meniscus 55 usually can be seen crystal 31 as.Fig. 2 also illustrates the height h and the slope Φ of meniscus 55.In addition, Fig. 2 illustrates the rate of pulling, or pulling rate, V
pAnd the speed of growth, or growth velocity, V
gRelative direction.
Should be appreciated that the crystalline body of growth conditions does not have very uniform diameter usually, although it generally is columniform.For this reason, the diameter of crystal 31 may have change slightly in the different axial positions along axis 39.In addition, diameter the different steps of crystal growth (such as, seed crystal, thin neck, cone, main body and end awl) can change.The measurement of crystal diameter can be measured in many ways.For example, known have several technology to be used to provide crystal diameter to measure, comprising the method for measuring bright ring width.Bright ring is that the sidewall of crucible inverted image is peculiar in solid-the flexure plane that liquid forms at the interface of crystal 31.Commonly used bright ring and meniscus sensor application optical pyrometer, photocell, be with photronic rotating mirror, be with photronic light source, line scan camera and two dimension display photographic camera.Common U.S. Patent No. 5,665,159 and the No.5 that transfers the possession of, 653,799, a kind of system and method has been described respectively, be used for accurately and reliably measuring crystal diameter and be used to control the monocrystalline silicon growing process, whole disclosures of these patents herein in the lump as a reference.Advantageously, the system and method for these patents has accurately been measured the diameter of growing crystals by handling the crystal-melt interface image by camera.
Referring to Fig. 1, control device 51 comprises a programmable logic controller (PLC) 61 again, and this PLC has 63 and storeies 65 of a central processing unit (CPU).In one embodiment, PLC61 receives and represents the position signal of reel position of rotation, and is easy to position signal is transformed into real-time expression cable 37 linearly moving numerals by common method able to programmely.After this manner, PLC61 calculates the relative position of seed crystal 35 and the pull rate that cable becomes with position signal.
In a preferred embodiment of the invention, the PLC61 primordial of control device 51 is in the controller of model, and this controller is used for the growth velocity and the diameter of crystal 31 in the suitable control growing.Control device 51 is dynamically determined existing growth velocity V by radius
g, and existing steady-state growth speed V
GsControl device 51 is also handled control V
GsNear pulling rate is so that the deviation of diameter and set(ting)value reduces to minimum.As described below, the diameter deviation of control device 51 by recording in the growing crystal 31 of a specified length before analyzing is identified for the preferred controlled variable group of ensuing growth part.This diameter Distribution figure for crystal 31 length of stipulating provides relevant to the information of observing the change in radius that takes place in the period.
Control device 51 preferably adopts the controlled variable group that has reduced, and comprising two main response constants, these two response constants become (such as, high response coefficient A with crystal length
hWith power response coefficient A
p).The 3rd parameter, that is transient time τ is not too important in this embodiment.Control device 51 is according to the single control stroke that the several values of meniscus level and power is adopted output pulses series, or according to the overall situation simulation in temperature field in the crystal puller 13, derives parameter A
hAnd A
p
Growth velocity is changed reduce to minimum, comprise and measure growth velocity at first reliably.In growth method commonly used, pulling rate V
pBe a known parameter, because it is set by seed crystal lift technique method.This technological method comprises that also a single-height that is used for the cylinder crystal ingot of growth fixation diameter (uses h
sRepresent), and meniscus level h and h
sAny deviation all cause diameter to change.In other words, the differentiation of diameter is because meniscus level changes in time, that is, h (t), error produce.Below, equation (1) is defined as the radius deviation function of meniscus level deviation:
r(t)/
t=-(2h
sV
g(t)/a
2) (h (t)-h
s) in (1) formula: h (t) is meniscus level (mm); h
sBe that the stable state meniscus level is (such as, h
s=6.5mm); R (t) is crystal radius (mm); r
sBe crystal radius setting point (mm); V
gIt is growth velocity; With a be the wicking action constant (such as, a=7.6mm).
Meniscus level relates to pulling rate V
pWhether depart from actual growth rate V
gTherefore, if at the interface the height h (t) of meniscus between crystal 31 and melt 29 is known, then growth velocity can be determined indirectly by following defined equation (2):
h(t)/
t=V
p(t)-V
g(t) (2) in the ideal case, the main body of crystal 31 is perfect cylindrical, and V
pAnd V
gEquate.Produce change in radius (square journey (1)) because meniscus level changes, combine (square journey (2)) reaching the smaller fluctuation of crystal diameter and reaching the smaller fluctuation of growth velocity simultaneously.In the present embodiment,, in the first order derivative of meniscus level h (t), and therefore, be stored in the second derivative of r (t) about the information storage of growth velocity.Should be appreciated that PID controller commonly used this fundamental quantity of ignoring.
As mentioned above, the ability that depends on control growing speed with the ability of control defect property growing silicon crystal consumingly.A key parameter in modern crystal growth is V
g/ G, G is the average axial temperature gradient at melt/solid interface place herein.To crystal 31 whole length, according to hot zone design, when growth velocity departs from a threshold value (such as, V
g/ G is about 0.13mm
2During/K min) less than 5-10%, finish successful defect free crystal growth.Advantageously, even concerning specific hot-zone configuration or processing condition, heat condition changes continuously and specifically, but in whole C Z crystal growing process, pilot circuit 51 also controls to desirable precision to growth velocity.In this embodiment, pilot circuit 51 with diameter remain on the smaller scope of set(ting)value franchise in (such as 0.5mm) and growth velocity (the whole cycle on an average) remain on the set(ting)value franchise lower (such as, 0.02mm/min) scope in so that grow perfect monocrystalline.
Shown in equation (1) and (2), vary in diameter is steady-state value h
sNear the embodiment of meniscus level fluctuation.Thereby it means pulling rate V
pNot with growth velocity V
gIdentical.Therefore, require little diameter deviation in fact with require with respect to steady-state value V
Gs, little growth velocity deviation combine.Be used for stable state meniscus level h
sGrowth velocity V
GsGrowth control had practical significance.Generally, V
g(to any meniscus level) represented by the heat flux balance that following equation (3) is used in solid/melt interface place:
V
g(t)=[K
sG
s(t)-K
mG
m(t)]/Q (3) formula in: G
s(t) be the solid state temperature gradient (℃/mm); G
m(t) be the liquid temperature gradient (℃/mm); K
sBe solid phase S
iThermal conductivity (J/mm min K); K
mBe liquid phase S
iThermal conductivity (J/mm min K); With Q be Heat of fusion (J/mm
3).In this case, K
s=1.5 J/mm min K, K
m=3 J/mmmin K and Q=4.1 J/mm
3
The fusion gradient is also very sensitive to meniscus level.Especially, G
mRoughly be inversely proportional to h.According to the present invention, V
gDerivative to h provides an important controlled variable, that is, high response coefficient A
hDefine by following equation (4):
A
h= V
g/ h＞0 (4) is in equation (4), and symbol is positive, highly means the reduction gradient G because increase
m
If crystal puller 13 is at V
p=V
GsFollowing pulling crystal 31, then according to equation (2), the transient time (such as, about 5 minutes) 1/A
hAfterwards, meniscus level will reach h automatically
sValue.Afterwards, as actual growth rate V
gBecome and V
GsWhen equating, the diameter of crystal 31 becomes invariable automatically.According to the present invention, the process control of being undertaken by control device 51 obtains V according to viewed diameter differentiation
Gs, and pulling rate is controlled at V
p=V
GsThe place.Next, a suitable power increment makes V
GsValue reaches set(ting)value V
SetIncrease power and cause the higher melt temperature in crystal 31 below, and therefore cause higher G
m(with lower V
g).V
GsDerivative to power P is another important controlled variable, and this parameter is defined by following equation (5):
A
p＝V
gs/p＜0 (5)
Because hot state changes continuously in the CZ crystal growing process, so must in operational process, adapt to V
GsVariation, offer the power of well heater 21 by intervening power supply 27, to keep V
GsNear the growth velocity V that sets
Set(t).The desired power increment is defined by following equation (6):
δ p=-(V
Gs-V
Set)/A
p(6) apply such power increment, make V
GsAfter a transient time τ, towards set(ting)value V corresponding to " crucible thermal lag "
SetMove.For example, τ is about 20 minutes.
Referring now to Fig. 3,, the present invention controls pulling rate and heater power, directly is transformed into diameter and the two growth velocity of controlling simultaneously control of growth velocity so that provide.Fig. 3 illustrates the operation that is used to finish this growth velocity control according to the described control device 51 of the preferred embodiment of the present invention.The place begins in step 69, the preset time interval of control device 51 records or the function of radius r (t) in cycle.Control device 51 is handled this information in step 71 then.When handling r (t), control device 51 at first derive r, h and the V at step 73 place
gCurrent value.Appendix A has illustrated observed function r (t) be used to derive best fit analysis according to these values of the present invention.
In a preferred embodiment of the invention, by control device 51 implemented to handle open loop change in radius r (t) based on the controller of model, so that derive r, h and V to the specified time segment record
g(reach V then
Gs) current value.Forward step 75 to, control device 51 is further handled r, h and the V that derives
gValue is so that derivation steady-state growth speed V
Gs Current value.At step 77 place, control device 51 produces an output signal, and this output signal representative pulling rate is with the variable V of deriving
GsAnd the increment that becomes changes.Control device 51 with each pulling rate increment, perhaps lifts effect with the periodicity of a regulation (that is, observe period end at each) at step 79 place then, is added on the crystal-driven device 47.Fig. 4 is an exemplary graphic representation, and it illustrates the time-varying deviation of radius of crystal 31, and will change the real radius that be produced by the increment of pulling rate and compare with desirable radius when a special time period finishes.
Referring to Fig. 3, control device 51 is N observation cycle again, and each cycle has the time length about equally, scope in observe r (t).Time length in cycle t
pPreferably be approximately meniscus time of response 1/A
hPerhaps sometimes the time long slightly (such as, about 10-20 minute).At step 81 place, therefore after N cycle, and after lifting effect N time, control device 51 N the V that add up
GsValue.With N V that adds up
GsValue is derived V
GsCurrent value (being used for power effect technological method equation (6)).Control device 51 V that adds up at step 81 place
GsValue is also derived the V of power effect thus in step 83
GsCurrent value.This adding up when reduce measuring diameter by the caused V of noise
GsError is very important.At step 85 place, control device 51 produces an output signal, and this output signal representative heater power changes with the increment that each variable change of deriving produces, then at step 87 place, power increment according to defined in the equation (6) is applied to the power effect on the heater power source 27.
In one embodiment, the cycle life N that lifts before the power effect is about 6 times, so that be about more than 1 hour or 1 hour the cycle time between each power effect.The length of crystal 31 growth is about 2cm (for the required growth conditions of perfect silicon) in each cycle.Output increment on pulling rate and heater power is predetermined to reduce to minimum with the deviation of diameter and growth velocity respectively.
Therefore this method is to allow crystal 31 " peace and quiet " certain hour, so that obtain the information under the pulling rate of substantially constant about function r (t).Like that, even there is measurement noise, also can derive existing variable r and h and existing V reliably
gAnd V
GsValue.If these variablees are known, then to any new V
pValue, people can predict the two to-be of r (t) and h (t), therefore select the new V of the best
p, so that reduce radius deviation and height tolerance the two.Second target even more important is because make derivative dr/dt reduce (square journey (1)) like that.Therefore, guaranteed " plateau " of diameter in the cycle in future.
Fig. 5 is the exemplary graph when the crystal radius deviation being shown being subjected to increment variable effect and heater power in the pulling rate by the device control of Fig. 1.Fig. 5 (a) illustrates real radius r and desirable radius r in the whole time range
SetBetween difference.Fig. 5 (b) and 5 (c) illustrate the effect of lifting and the power effect of increment respectively.In the example of Fig. 5 (c), control device 51 applies first power effect after first 10 minutes observation cycles, all apply this effect at every N after the cycle then, herein N=6.
One of appendix B explanation exemplary according to pulling rate technological method of the present invention.
In view of the foregoing, as can be seen, several purposes of the present invention have all reached, and obtain other favourable results.
Owing to can in above-mentioned structure and method, do various changes not departing from the scope of the present invention under the situation, therefore in the above description resulting and in the accompanying drawings shown in all things all regard illustrative and not restrictive as.
Appendix A
According to the present invention, the r that analysis and observation arrives (t) function produces existing r, h and V
g(with V then
Gs) value.For this reason, the growth velocity V in fundamental equation (1) and (2)
g(t) launch with respect to meniscus level:
V
g=V
Gf+ A
h(h-h
r) (A-1) h in the formula
fAnd V
GsIt is current value (being equivalent to observe end cycle).After this manner, equation (1) is linear, and equation (2) comes down to nonlinear.Also has h to regulation
f, V
GfAnd r
f(observing the radius when finishing) separating of r (t) down is easy to obtain with analytical form:
R (t)=r
f+ A[Y (h
f-h
s) x+ (Y+h
f-h
s) Z (x+1-e
x)+Z
2(x+1.5-2e
x+ 0.5e
2x)] (A-2) in the formula: x=A
hT; And time t counts down to beginning from observing end cycle.
Parameter Y and Z are the combinations of the growth/rate of pulling:
Y＝V
gf/A
h
Z=(V
p-V
Gf)/A
hWith the capillarity parameter by this justice of following formula:
A＝2h
s/a
2
Theory function r (t) comprises prevailing system variable r
fAnd h
f, existing growth velocity V
GfWith main body be parameter A
h(that is, the high response coefficient) they all are to be determined.In a preferred embodiment, the function r that these numerical value substitutions are recorded
Exp(t), so that from r
Exp(t) obtain the least-squares deviation of r (t).Be expected at function r
Exp(t) noise in makes it that reliable A can not be provided
hValue.For this reason, the present invention stipulates an A
hValue, this A
hValue makes control device 51 can lead to above-mentioned best-fit program again and derives three numerical value r reliably
f, h
fAnd V
GfPreferably, the present invention recomputates V
Gs, the growth velocity at stable state meniscus level place, this V
GsIt is the relevant amount that a qualification suitably gets involved pulling rate and power.This important amount is according to V
GfAnd h
fMatch value recomputate:
V
gs＝V
gf-A
h(h
f-h
s) (A-3)
Appendix B
Observing the end cycle place, determine r, h and V
GsCurrent value, obtain by above-mentioned best-fit program in the appendix A.Numerical value r
fAnd h
fBe to be used for the number back value that the cycle is observed in the front, and be the initial value of next cycle.Thereby these numerical value are represented r now
oAnd h
oUtilize now and near the stable state height, launch V
g(h), from start to end, dynamic equation (1) and (2) are carried out the forward integration.After this manner, obtain new last h and the r value predicted:
h＝h
s+Z+(h
o-h
s)e
-x (B-1)
R=r
o-A[YZ
x+ (2Z+Y) (h
o-h
s-Z) (1-e
-x)+0.5 (h
o-h
s)
2(1-e
-2x)] (B-2) in the formula: t
pIt is the time length in cycle; And x=A
ht
pParameter A, Y and Z are V as mentioned above
GsReplace V
Gf
In order to select new pulling rate value (by parameter Z=(V
p-V
Gs)/A
hEnter equation), at first check current value r
o-r
SetAnd h
o-h
sPreferably, these values to aforesaid diameter deviation be " safety " (such as, the radius deviation should be no more than certain boundary, Δ r=0.5mm)." safety " situation meaning is meant, at V
P=V
GsSpeed under lift, radius is departed from greater than Δ r.From equation (B-2), to this situation prediction r, Z=0 herein is:
R=r
o-A[Y (h
o-h
s) (1-e
-x)+0.5 (h
o-h
s)
2(1-e
-2x)] if (B-3) such | r-r
o| be that the technological method that then is used for pulling rate is reduced in Δ r scope:
V
p=V
Gs(B-4) as mentioned above, under this speed, lift and automatically make meniscus level produce desirable steady-state value h
s, because according to equation (B-1), h-h
s=(h
o-h
s) e
-xYet in the Vgs value of deriving, the induced error of noise for example, may make the radius of being predicted from equation (B-3) surpass aforementioned error delta r.In this case, can add a suitable height tolerance, so that reduce the radius deviation.For this reason, V
pShould depart from V
GsSuitable Vp should be like this, promptly new end value r-r
SetAnd h-h
sHave identical symbol (such as, according to equation (2), plus deviation r-r
SetWill be at positive h-h
sThe place weakens).According to equation (B-1) and (B-2), if:
(r-r
Set)/(h-h
s)=AV
Gs/ A
h(B-5) then reach the fastest weakening subsequently.
Therefore, selected V
pSo that make r and h reach perfect condition as defined in the equation (B-5).For this reason, to whole V
pCarry out a computation period, so that respectively by the equation (B-1) of definition h and r and (B-2), check gauge is decided to be with V
pAnd the final r and the h value that become.The selected V that forms equation (B-5) relation
pValue is as the technological method that is used to the effect of lifting.In a preferred embodiment, these restrictions are added in V
pGo up (such as, be positive but less than a threshold value) and be added in | h-h
s| go up (such as, be less than or equal to about 1mm) so that guarantee the suitability of basic meniscus equation (1).Therefore, the final V that allows
pBe in the restriction that is applied, to make ratio (r-r
Set)/(h-h
s) as far as possible near the target ratio AV of equation (B-5)
Gs/ A
hValue.
Claims (10)
1. the control method for the crystal puller use is used for by cutting krousky technology growing single-crystal shape semiconductor crystal, and above-mentioned crystal puller has the crucible of the heating of a built-in semiconductor melt, and crystal is at growth velocity V
gGrow from melt down, above-mentioned melt has a near surface that forms meniscus crystal, and above-mentioned crystal puller also has a well heater, and this well heater is used for heating crucible by the power supply power supply, and above-mentioned crystal is grown on seed crystal, and this seed crystal is at pulling rate V
pLift from melt down, aforesaid method may further comprise the steps:
Limit a timed interval, be used for observing the crystalline growth that lifts from melt;
Measure the crystalline diameter so that the crystal diameter of determining to take place at viewing duration changes;
Estimate growth velocity V
GfThe current value that becomes with the crystal diameter of measuring;
Growth velocity V when estimation finishes at viewing duration
GsWith the growth velocity V that estimates
GfAnd the existing stationary value that becomes;
Determine with the steady-state growth speed V that estimates
GsAnd the pulling rate parameter that becomes, above-mentioned pulling rate parameter is represented as and reaches the pulling rate V that the ideal crystal diameter changes to aimed dia
pIncrement change;
Determine with the steady-state growth speed V that estimates
GsAnd the heater power parameter that becomes, above-mentioned heater power parameter is represented as and reaches the ideal crystal growth rate is added to increment from power on the well heater to the variation of target growth velocity and change; And
According to pulling rate parameter regulation pulling rate V
pWith the power that is added to according to heater power parameter regulation power supply on the well heater, thereby after observing the period, next make during the crystal growth the two the variation of crystal diameter and growth velocity reduce to minimum.
2. the described method of claim 2 also is included in N and observes the steady-state growth speed V that adds up and estimate in the period
GsThe step of value, and wherein estimate steady-state growth speed V
GsStep, comprise and estimate growth velocity V
GsWith N steady-state growth speed V that estimates
GsAccumulated value and the existing stationary value that becomes, and the step of wherein regulating pulling rate comprises that control is with the steady-state growth speed V that estimates
GsAnd the pulling rate V that becomes
p, reduce to minimum with respect to the variation of aimed dia so that make with crystal diameter afterwards.
3. the described method of claim 1 is characterized in that: the length and predetermined high response coefficient A of observing the period
hBe inversely proportional to.
4. the described method of claim 1 is characterized in that: estimate growth velocity V
GsThe step of existing steady-state value comprises:
According to a variation definition function r (t) of the crystal diameter that takes place at viewing duration, above-mentioned function r (t) represents the variation of radius, and is crystal radius r, meniscus level h and growth velocity V
gThe function of relative time; With
Function r (t) is finished the best-fit program, so that derive when the observation period finishes crystal radius r
f, meniscus level h
fWith growth velocity V
GfCurrent value.
5. the described method of claim 4 is characterized in that: the step of finishing the best-fit program comprises function r (t) is defined as: r (t)=r
f+ A[Y (h
f-h
s) x+ (Y+h
f-h
s) Z (x+1-e
x)+Z
2(x+1.5-2e
x+ 0.5e
2x)];
In the formula: x=A
hT; Y=V
Gf/ A
hZ=(V
p-V
Gf)/A
hAnd A=2h
s/ a
2With
In the formula: A
hIt is a predetermined high response coefficient; Time t is end the counting down to beginning from observing the period; h
sIt is the stable state meniscus level; With a be the capillarity parameter.
6. the described method of claim 1 is characterized in that: determine the step of pulling rate parameter, comprise the V that prediction is new
pValue so that reduce the variation of crystal diameter subsequently, and makes meniscus level keep approximately constant.
7. the described method of claim 1 also comprises the following steps: after the initial observation period one group of controlled variable that becomes with crystal diameter at viewing duration to be determined in a part of crystal growth; Become with controlled variable with the control crystal growth.
8. the described method of claim 1 also is included in viewing duration and lifts the crystalline step of growing under the first target pulling rate from melt, and the above-mentioned first target pulling rate is constant basically.
9. the described method of claim 1 also comprises the step of estimation in the existing deviation of observing the period crystal diameter that becomes with the crystal diameter that records of end and meniscus level, and the steady-state growth speed V of estimation wherein
GsWith the growth velocity V that observes period end's estimation
GfBecome with meniscus level.
10. control method of using for crystal puller is used for according to cutting krousky technology a kind of monocrystalline semiconductor crystal of growing, and above-mentioned crystal puller has the crucible of the heating of a dress semiconductor melt, and crystal is at growth velocity V
gGrow from melt down, above-mentioned melt has a near surface that forms meniscus crystal, and above-mentioned crystal puller also has a well heater, and this well heater is used for heating crucible by the power supply power supply, and above-mentioned crystal is grown on seed crystal, and seed crystal is at pulling rate V
pLift from melt down, aforesaid method may further comprise the steps:
Limit a timed interval, be used for observing the crystalline growth that lifts from melt;
Measure the crystalline diameter so that the crystal diameter of determining to take place at viewing duration changes;
Variation according to the crystal diameter that takes place at viewing duration defines a function r (t), and above-mentioned function r (t) represents change in radius, and is crystal radius r, meniscus level h and growth velocity V
gTime-varying function;
Function r (t) is implemented the best-fit program, observing period end's crystal radius r so that derive
f, meniscus level h
fWith growth velocity V
GfCurrent value;
Calculate growth velocity V
GsWhen observation finishes period with crystal radius r
f, meniscus level h
fWith growth velocity V
GfCurrent value and the existing steady-state value that becomes; With
The control crystal puller is with existing steady-state growth speed V
GsAnd change, so that make crystal diameter and the two variation of growth velocity reduce to minimum during the crystal growth in the back.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US49556300A | 2000-02-01 | 2000-02-01 | |
| US09/495,563 | 2000-02-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1396965A true CN1396965A (en) | 2003-02-12 |
Family
ID=23969109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN01804430A Pending CN1396965A (en) | 2000-02-01 | 2001-01-24 | Method for controlling growth of silicon crystal to minimize growth rate and diameter deviations |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6726764B2 (en) |
| EP (1) | EP1252375B1 (en) |
| JP (1) | JP2003521432A (en) |
| KR (1) | KR20020081287A (en) |
| CN (1) | CN1396965A (en) |
| DE (1) | DE60100795D1 (en) |
| WO (1) | WO2001057294A1 (en) |
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| CN112323141A (en) * | 2020-11-03 | 2021-02-05 | 上海新昇半导体科技有限公司 | Single crystal growth method and single crystal growth apparatus |
| CN112789371A (en) * | 2021-01-11 | 2021-05-11 | 眉山博雅新材料有限公司 | Crystal growth control method and system |
| WO2022147835A1 (en) * | 2021-01-11 | 2022-07-14 | 眉山博雅新材料有限公司 | Crystal growth control method and system |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1252375B1 (en) | 2003-09-17 |
| EP1252375A1 (en) | 2002-10-30 |
| DE60100795D1 (en) | 2003-10-23 |
| US20020043206A1 (en) | 2002-04-18 |
| KR20020081287A (en) | 2002-10-26 |
| WO2001057294A1 (en) | 2001-08-09 |
| JP2003521432A (en) | 2003-07-15 |
| US6726764B2 (en) | 2004-04-27 |
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