CN2825658Y - Control system for crystal isodiametric growth - Google Patents
Control system for crystal isodiametric growth Download PDFInfo
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- CN2825658Y CN2825658Y CN 200520011105 CN200520011105U CN2825658Y CN 2825658 Y CN2825658 Y CN 2825658Y CN 200520011105 CN200520011105 CN 200520011105 CN 200520011105 U CN200520011105 U CN 200520011105U CN 2825658 Y CN2825658 Y CN 2825658Y
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- 239000013078 crystal Substances 0.000 title claims abstract description 166
- 230000012010 growth Effects 0.000 title claims abstract description 38
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- 238000000034 method Methods 0.000 claims description 56
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- 229910052710 silicon Inorganic materials 0.000 abstract description 13
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Abstract
The utility model relates to a control system for crystal isometric growth. The system is provided with a crystal growth furnace, a crystal diameter detection part and a crucible temperature control part; a crystal pulling-up speed control part for collecting real-time pulling-up speed signals of the crystal and feeding back and adjusting the pulling-up speed of the crystal; there is also a common controller; the controller respectively receives detection signals from the crystal diameter detection part, the crystal pulling speed control part and the crucible temperature control part, and the controller calculates a crystal pulling speed regulation signal by using an algorithm combining Fuzzy control and PID control, feeds the crystal pulling speed regulation signal back to the crystal pulling speed control part to regulate the crystal pulling speed, calculates a heating power regulation signal, and feeds the heating power regulation signal back to the crucible temperature control part to regulate the temperature of the melt. The system achieves excellent control quality, greatly improves the diameter control precision of the crystal in the equal-diameter growth stage, and stably improves the one-time drawing yield of the large-diameter silicon single crystal rod.
Description
Technical field
The utility model relates to a kind of Controlling System of isodiametric growth of crystal, relates in particular to the Controlling System of silicon single crystal isodiametric growth.
Background technology
Semiconductor material is the base mateiral of semi-conductor industry, and current semiconducter device more than 95% is made with silicon materials, and the unicircuit more than 99% is a silicon integrated circuit, and producing the needed raw material of unicircuit is silicon single crystal.In recent years, the whole world has strengthened the exploitation dynamics to this eco-friendly power source of sun power, the solar power station that with conversion of solar energy is civilian electric power energy rises just rapidly as an industry, simultaneously to solar energy highly effective transform novel material---the demand of silicon single crystal also is doubled and redoubled, but domestic producer that can the manufacture order crystal silicon is very few, and inefficiency of production far can not satisfy the demand of domestic market.
The technology of traditional manufacture order crystal silicon is when the silicon crystalline growth begins, and makes with the way that lifts.In the monocrystalline silicon production process, the crystalline pull rate can have influence on the crystalline quality.Simultaneously, the process of the crystal growth in the single crystal silicon growth furnace has non-linear and characteristics large time delay, uses conventional PID (proportion integration differentiation) control and is difficult to achieve effective control.Its reason is that whole process of production mainly is divided into the fusing of silicon raw material, seeding, shouldering, commentaries on classics shoulder, isodiametric growth and six successive stage of ending.In these six successive stage crystal growing process non-linear as having, the time become, the controlled member of large time delay, as isodiametric growth.Though present many control theories and technology are increasingly mature, the effect of using conventional PID controller control is still undesirable.And methods such as employing self-adaptive PID, computing time is long, and debugging cost is big, in real time application difficult.
With CZ method (Czochralski method, have in the Chinese article and be translated into Czochralski method) during pulling of silicon single crystal, the diameter control accuracy in the isometrical stage of single crystal silicon growth is relevant with the overall performance of equipment, as factors such as melt temperature, dynamic property in pull rate control, the crystal growing process.Therefore, particularly for the Controlling System of major diameter single crystal stove, traditional monotype is regulated and can not be reached ideal diameter control effect.
Diameter of silicon single crystal control method and equipment thereof are disclosed as Chinese patent application 91102922.2.In this application, the pulling single crystal measuring diameter value that Optical devices are measured with require diameter value to compare, to determine deviation, again the deviation that draws is carried out incomplete differential PID processing or smith's method processing, to calculate pull rate, again pull rate is added to crystal and lifts on the motor controller of equipment, thereby carry the diameter that crystal draws high body by the control of control pull rate.This application is the pull rate by the equipment that lifts in the control monocrystalline silicon growing process only, so that crystal diameter remains on the desired value, and has ignored in crystal growing process melt temperature to the influence of the diameter of crystal growth.Simultaneously, the dynamic property that incomplete differential PID handles or smith's method is handled of this application employing is relatively poor.
Chinese patent application 00805352.9 discloses the method and apparatus of control diameter of silicon crystal in the growth process.It is a kind of along with promoting the method and apparatus of the temperature of crystal bar by changing melt with the control boule diameter from melt that this application provides, and its crystal bar draws high from melt with the targeted rate according to predetermined velocity profile basically.Obviously this application is a controlled member with the temperature of melt only, organically combines and the temperature control of melt is drawn high speed control with crystal bar, and the dynamic property handled of PID is relatively poor simultaneously, so this application is more limited to the control ratio of crystal diameter growth.
Usually, the person of ordinary skill in the field only considers by the method for PID control melt temperature in pull rate control, the crystal growing process to be controlled, thereby the Controlling System that causes existing isodiametric growth of crystal is difficult to further improve in the crystal growing process the control accuracy of diameter, is difficult to reach the production purpose of the isodiametric growth of crystal of expection.
The utility model content
It is a kind of with Fuzzy (forecasting type is fuzzy) control and two kinds of algorithm combinations of PID control that the purpose of this utility model is to provide, improve the diameter control accuracy in isodiametric growth of crystal stage, thus the Controlling System of the isodiametric growth of crystal of the yield rate that stable raising large diameter silicon monocrystal rod once draws.
The technical scheme that realizes the utility model purpose is: a kind of Controlling System of isodiametric growth of crystal has
Crystal growing furnace;
Detect the crystal diameter test section of crystal diameter variable signal in the interior crystal growing process of stove;
Gather melt temperature signal and the heater voltage current signal of well heater and the crucible temperature control part of the interior melt temperature of feedback control stove in the stove;
Gathering crystal draws high the crystal that speed signal and feedback adjustment crystal draw high speed in real time and draws high the speed control part;
It is characterized in that:
Also has a shared control unit; Described controller receives respectively from described crystal diameter test section, described crystal and draws high speed control part and described crucible temperature control part detection signal separately, described controller (7) is used Fuzzy control and PID control bonded arithmetic calculation and is gone out crystal and draw high speed-regulating signal and feed back to described crystal and draw high the speed control part and draw province's speed to adjust to crystal, and calculates the heating power conditioning signal and feed back to described crucible temperature control part the temperature of melt is adjusted.
In the technique scheme, described crucible temperature control partly comprises crucible temperature testing circuit, heater voltage current detection circuit and heating power regulating circuit; The output terminal of the crucible temperature detection signal of described crucible temperature testing circuit is electrically connected with the crucible temperature detection signal input terminus of described controller; The heater voltage current detection signal output terminal of described heater voltage current detection circuit is electrically connected with the heater voltage current detection signal input terminus of described controller; The heating power of described controller is regulated output terminal and is electrically connected with the heating power adjusting input terminus of described heating power regulating circuit.
In the technique scheme, described crystal draws high the speed controlling portion branch and comprises that crystal draws high tachometer circuit and crystal draws high alignment circuit; The crystal that described crystal draws high tachometer circuit draws high the tachometer signal output terminal and draws high the tachometer signal input terminus with the crystal of described controller and be electrically connected; The crystal of described controller draws high crystal that speed-regulating signal output terminal and described crystal draw high alignment circuit and draws high the speed-regulating signal input terminus and be electrically connected.
In the technique scheme, described crystal diameter test section comprises a crystal diameter testing circuit, and the crystal diameter detection signal output terminal of described crystal diameter testing circuit is electrically connected with the crystal diameter detection signal input terminus of controller.
In the technique scheme, controller is a programmable logic controller, and this programmable logic controller has simulating signal input block, CPU, simulating signal output unit, the I/O interface that connects by bus.
The positively effect that the utlity model has: (1) the utility model is regulated with melt temperature and is embedded the adjusting of crystal growth pulling rate, realizes the diameter control accuracy of expection.(2) the utility model combines diameter control and the control of warm school, realizes the isometrical automatic growth of crystal diameter.(3) adopt intelligent controller control Heating temperature and crystalline isodiametric growth, to improve the quality of products, reduce working strength, energy efficient has great meaning.(4) the utility model combines Fuzzy (bluring) control and two kinds of algorithms of PID (proportional integral derivative) control, has obtained all better controlled characteristics of dynamic property, steady-state behaviour.Consider PID and Fuzzy control algolithm relative merits separately, adopt Fuzzy control in the large deviation scope, the method for PID control in the little deviation range.Promptly, control the steady-state error of the system of elimination with PID, thereby make system reach good controlling performance with the good dynamic response of Fuzzy control assurance system.
Description of drawings
Fig. 1 is the circuit assembly block diagram of the Controlling System of isodiametric growth of crystal of the present utility model.
Fig. 2 is the diameter control principle block diagram of controller of the present utility model.
Fig. 3 is the temperature control principle block diagram of controller of the present utility model.
Fig. 4 is the utility model on the basis of conventional PID control, uses the Fuzzy sets theory, according to different | E| and | EC| online self-tuning K
P, K
I, K
DThe time, the model block diagram of adjusting that is adopted.
Fig. 5 is the system architecture diagram of industrial computer 8 of the present utility model.
Fig. 6 is the system architecture diagram of controller 7 of the present utility model.
Embodiment
Referring to Fig. 1, the Controlling System of the isodiametric growth of crystal of present embodiment, have crystal growing furnace, crystal diameter testing circuit 1, crystal draw high tachometer circuit 2, crucible temperature testing circuit 3, heater voltage current detection circuit 4, crystal and draw high alignment circuit 5, heating power regulating circuit 6, controller 7, industrial computer 8 and display screen 9.
The crystal diameter detection signal output terminal of crystal diameter testing circuit 1 is electrically connected with the crystal diameter detection signal input terminus of controller 7, the crystal that crystal draws high tachometer circuit 2 draws high the tachometer signal output terminal and draws high the tachometer signal input terminus with the crystal of controller 7 and be electrically connected, the output terminal of crucible temperature testing circuit 3 crucible temperature detection signals is electrically connected with the crucible temperature detection signal input terminus of controller 7, the heater voltage current detection signal output terminal of heater voltage current detection circuit 4 is electrically connected with the heater voltage current detection signal input terminus of controller 7, the crystal of controller 7 draws high crystal that speed-regulating signal output terminal and crystal draw high alignment circuit 5 and draws high the speed-regulating signal input terminus and be electrically connected, and the heating power of controller 7 is regulated output terminal and is electrically connected with the heating power adjusting input terminus of heating power regulating circuit 6.
Industrial computer 8 is the industry control PC, and the screen of display screen 9 is tangible control; The two-way electrical connection of RS-232 serial data end of the RS-232 serial data end of controller 7 and industrial computer 8.
When controller 7 and industrial computer 8 communications, baud rate is 9600b/s, and the employing cycle is 1s, and controller 7 adopts interrupt mode when receiving data, sends and adopts the routine call launching means.The demonstration signal output part of industrial computer 8 is electrically connected with the demonstration signal input part of display screen 9, and the touch signal output terminal of display screen 9 is electrically connected with the touch signal input terminus of industrial computer 8.
The method that adopts when the Controlling System of the isodiametric growth of crystal of present embodiment is worked has following steps: 1. measure and detect crystal diameter, gather the crystal diameter variable signal in the crystal growing process; Measure the detection crystal simultaneously and draw high speed, gather and draw high speed signal in real time; Measure the temperature that detects melt in the crucible, gather the melt temperature signal; And the heater voltage current signal of measuring detection heater heats electric current and voltage size; Described crystal diameter variable signal, described speed signal, described melt temperature signal and the described heater voltage current signal of drawing high in real time are sent on the shared control unit (7);
2. described controller (7) adopts position model PID (proportional integral derivative) that the described crystal diameter variable signal and the described speed signal that draws high in real time that receive are handled, and obtains to draw high speed control signal; Described controller (7) adopts increment type PID that the melt temperature signal and the heater voltage current signal that receive are handled simultaneously, obtains the heating power conditioning signal;
Step 2. in, controller 7 drawing high the arithmetic expression that is adopted when 5 pairs of growths in thickness of alignment circuit are controlled by crystal is:
SL＝SP+F(ΔD)
In the formula, SL is that crystal draws high speed, and SP is that given crystal draws high speed, and F (Δ D) is diameter control PID output, and Δ D is a diameter deviation;
3. the speed control signal that draws high that will draw after will handling is used for control and adjusts crystal and draw high speed; And the heating power conditioning signal that will draw after will handling is used for control adjustment heater power.
The arithmetic expression to electrical signal that is wherein adopted in the temperature controlled processes is:
In the formula, F (Δ T) is temperature control PID output, and Fset is predetermined control PID output, and Tset is that temperature is set, and Ti is a crucible temperature detection signal,
Compensation for warm school, Δ t is the time segment length;
Wherein:
In the formula, Tr is warm school slope μ V/min, and Trset is for being warm school slope preset value, and Δ L is that crystal draws high segment length mm, and F (Δ V) is warm school control PID output, and Δ V is that crystal draws high real speed and given speed deviate mm.
See Fig. 5 and Fig. 6, the user is provided with the process curve of crystal growth control process according to sampled data and by industrial computer 8, and control data, working order, input state and the output state of controller 7 is set simultaneously; When industrial computer 8 operation monitoring configuration softwares, the user carries out picture supervision and control by the touch of display screen 9 or the keyboard of industrial computer 8 to crystal growing process, and the user can adjust to further setting of process curve and controlled variable simultaneously.
Because the complicacy of controlled member is difficult to mathematical model and accurately expresses, and can only do qualitative analysis.From control principle, can determine the basic controlling strategy.As everyone knows, the dynamic property of PID control is relatively poor, but its integrating function can be eliminated static difference, and steady-state behaviour is improved; The dynamic property of Fuzzy control is better, but because quantification gradation limits, makes the stable state accuracy can not be satisfactory.Therefore, Fuzzy control and two kinds of algorithms of PID control are combined, just might obtain all better controlled characteristics of dynamic property, steady-state behaviour.Consider PID and Fuzzy control algolithm relative merits separately, adopt Fuzzy control in the large deviation scope, the method for PID control in the little deviation range.Promptly, control the steady-state error of the system of elimination with PID, thereby make system reach good control with the good dynamic response of Fuzzy control assurance system; Quality.
In step diameter control 2., adopt position model PID.For suppressing high frequency interference and sampling action to spike interferential susceptibility, change desirable differential into restricted differential, deviation signal is through medium filtering.Formula is as follows:
Step 3. in temperature control, for avoiding causing the vibration of power control circuit, realize manually and automatic noiseless switching, adopt increment type PID, and differential forward, promptly differential algorithm is not influenced by set(ting)value, only the deviation of measuring value signal is carried out differential algorithm.Formula is as follows:
In the formula, m
nBe the n time output valve; e
nBe the n time deviation signal; P is a proportional band; Δ T is the sampling period; T
IBe integration time constant; T
DBe derivative time constant; K
DBe the differential gain.
Under the situation of large deviation, adopt forecasting type Fuzzy from Adjustable PID Parameter Controller 7.Formula is as follows:
On the basis of conventional PID control, use the Fuzzy sets theory, set up parameter K
P, K
I, K
DSame absolute value of the bias | E| and deviation change absolute value | binary continuous function between EC| relation and based on the fuzzy rule of thumb rule, and according to different | E| and | EC| online self-tuning K
P, K
I, K
DAdjust model as shown in Figure 4.
When | when E| is big, get bigger K
PWith less K
D, and K
IBe 0; When | E| hour, get bigger K
PAnd K
I, less K
DBy with K
P, K
I, K
D, | E| and | the EC| obfuscation, determine the degree of membership of Fuzzy subclass, design P1D parameter tuning table.By finding corresponding correction factor in the table, adopt critical proportional band law to determine base value, thereby adjust pid parameter.
In the present embodiment, because it is that the ring of light signal during to crystal growth is measured indirectly by infrared thermometer that crystal diameter changes, through this ring of light signal is amplified, computer is sampled again afterwards, so this ring of light pickup electrode is vulnerable to external interference, introduce the velocity feedback of feed forward control for this reason, this ring of light signal is carried out dynamic compensation, suppressed external interference effectively.
In temperature control, introduce nonlinear Control, guarantee in the limit of error of predesignating, by crystal being drawn high the measurement of speed, the pulling rate setting curve that crystal is drawn high speed and process of growth compares, the crystalline growth temperature is regulated control, the crystal pull rate is changed by the technique initialization curve, reduced because PID regulates the hysteresis that produces.
See Fig. 2, in the present embodiment, when crystal diameter changed, controller 7 can be regulated crystal automatically and draw high speed, and crystal diameter is remained unchanged.
1, when diameter is controlled, the explanation of the input parameter of controller 7:
1. diameter signal D
IBe variation, thereby measure the crystalline vary in diameter indirectly by the ring of light signal of measuring the solid-liquid interface in the crystal growing process.When crystal diameter becomes big or diminishes, diameter signal D
IAlso become big or diminish.
2. diameter is set SV: when isodiametric growth of crystal, when controller 7 inputs were automatic, the diameter signal of getting this moment was as the diameter set(ting)value.
3. control speed output OP: be a bipolarity output parameter, the positive and negative variation of its numerical value, dimension is mm/min, to draw high the speed measure unit consistent with real crystal.
When crystal diameter becomes big, diameter signal D
IBecome big, control fast output OP then and become big, crystal draws high speed SL change greatly then, and last crystal diameter diminishes.
When crystal diameter diminishes, diameter signal D
IDiminish, control speed output OP diminishes then, and crystal draws high speed SL and diminishes then, and last crystal diameter becomes big.
No matter how diameter signal changes, controller 7 can both guarantee the variation of crystal diameter in certain scope, the effect and the purpose of Here it is controller 7.
2, when diameter is controlled, the inner parameter of controller 7:
1. proportional gain P
n: (P
n=0～1.99).P
nShow that proportional action is strong more, P greatly more
nMore for a short time, show that proportional action is more little.Work as P
n=0 o'clock, proportional action was invalid.
2. integration constant I
n: (I
n=0～199).I
nBig more, show that integral action is more little, I
nMore little, show that integral action is big more.Work as I
n＞199 o'clock, integral action was invalid.
3. differential gain D
n: (D
n=0～9.9).D
nBig more, show that the differential action is strong more, D
nMore little, show that the differential action is weak more.
4. control cycle t (t=0.1～99.9 second).Control cycle be controller 7 every a control cycle time, once adjust controlling fast output valve.
5. control diameter parameter Md (Md=0.00～3.00).Change according to crystal diameter and crystal to be drawn high speed control, the value of E1 is chosen in E1=1.0.
6. differential slope Dk (Dk=00～99).The value of general E2 gets final product between 50～80.
7. the selection of controller 7 parameters.P in the present embodiment
n=1.0, I
n=30, D
n=0.8.Md＝1.20，Dk＝80。
See Fig. 3, the effect of warm school control is in crystal growing process, and the control Heating temperature makes crystal draw high speed and changes by the setting of pulling rate setting curve SL ramp.When crystal draws high the speed deviations set(ting)value, change the size of temperature control output OP value, crystal diameter is changed, at this moment, the speed that controller 7 control crystal draw high makes crystal draw high speed SL near pulling rate set(ting)value SP.
When the control of warm school, the parameter declaration of controller 7:
1, I/O parameter
The I/O parameter comprises: crystal draws high speed SL, temperature control output OP, warm school speed t
r, set pulling rate SP (being pulling rate setting curve SL ramp).
1. crystal draws high speed SL (0～9.99mm/min).It is the same that the displayed value allomeric of this parameter draws high the demonstration of speed unit, and the parameter dimension is mm/min.
2. temperature control is exported OP (0～4095).This parameter is an output digital parameters, and it exports numerical value 0～4095, and corresponding output voltage is (adjustable) about 0～12mv.
3. warm school speed t
r, (99.9～99.9 μ V/MIN).Temperature school speed is meant the variable quantity of per minute temperature control output OP, works as t
r＜0 is cooling state, t
r＞0 is soaking condition, t
r=0 is temperature constant state.
4. set pulling rate SP (SL ramp).Drop into when automatic at controller 7, the crystal in this is moment drawn high speed SL as setting pulling rate SP.The variation with crystal length changes by the parameter setting of pulling rate setting curve SL ramp to set pulling rate simultaneously.
2, when the control of warm school, the inner parameter of controller 7:
1. proportional gain P
n(P
n=0～5.00).P
nBig more, proportional action is strong more, P
oMore little, proportional action is weak more.
2. integration constant I
n(I
n=0～500).I
nBig more, integral action is strong more, I
nMore little, integral action is weak more.
3. control cycle: t (t=0.1～99.9 second).Control cycle shows every time t, and warm school speed is once adjusted.
4. the selection of controller 7 inner parameters.In the ordinary course of things, establish P earlier
n=1.0, I
n=20, t=20.0.
Principle and characteristics about PID control:
In engineering reality, the setter control law that is most widely used is ratio, integration, differential control, is called for short PID control, claims PID to regulate again.The PID controller existing so far nearly 70 years history of coming out, it is simple in structure with it, good stability, reliable operation, easy to adjust and become one of major technique of Industry Control.When the structure and parameter of controlled plant can not be on top of, or when can not get precise math model, when other technology of control theory was difficult to adopt, the structure and parameter of central controller must rely on experience and field adjustable to determine, at this moment the thereof using PID control techniques is the most convenient.Promptly understand a system and controlled plant when we are incomplete, in the time of maybe can not obtaining system parameter by effective measurement means, the most suitable PID control techniques of using.PID control also has PI and PD control in the reality.The PID controller is exactly the error according to system, and proportion of utilization, integration, difference gauge calculate that manipulated variable controls.
The output and the proportional relation of error originated from input signal of the controller of ratio P control.There is steady-state error in system's output when proportional control only.
In integration I control, the output of controller and error originated from input signal be integrated into proportional relation.To an automatic control system, if after entering stable state, there is steady-state error, then claim this Controlling System be steady-state error arranged or be called for short poor system arranged.In order to eliminate steady-state error, in controller, must introduce " integral ".Integral depends on the integration of time to error, and along with the increase of time, integral can increase.Like this, even if error is very little, integral also can strengthen along with the increase of time, and the output increase that it promotes controller further reduces steady-state error, up to equalling zero.Therefore, the PI controller of " proportional+integral " can make system not have steady-state error after entering stable state.
In differential D control, the differential of the output of controller and error originated from input signal is that the error change rate is proportional.Vibration even unstability may appear in automatic control system in overcoming the regulate process of error.Its reason is owing to have big inertia assembly link or hysteresis delay assembly is arranged, and has the effect that suppresses error, and its variation always lags behind error change.The way that solves is the variation " in advance " that makes the effect that suppresses error, promptly in error near zero the time, the effect that suppresses error just should be zero.In other words, it is not enough often only to introduce " ratio " item in controller, the effect of proportional only is the amplitude of fault in enlargement, and what need at present to increase is " differential term ", the trend that its can predicated error changes, like this, PD controller with " ratio+differential ", the effect of inhibition error Control is equalled zero, even be negative value, thereby avoid the serious overshoot of controlled volume.So to the controlled plant of big inertia or hysteresis is arranged, the PD controller can the kinetic characteristic of improvement system in regulate process.
The parameter tuning of PID controller is the core content of Control System Design.The parameter tuning of PID controller is a size of determining scale-up factor, integral time and the differential time of PID controller according to the characteristic of controlled process.The method that the PID controller parameter is adjusted is a lot, summarizes and to get up to have two big classes: the one, and the Theoretical Calculation method of adjusting.It mainly is the mathematical model according to system, determines controller parameter through Theoretical Calculation.The resulting data calculated of this method may not directly be used, and also must adjust and revise by engineering is actual.The 2nd, the engineering setting method, it mainly relies on engineering experience, directly in the test of Controlling System, carry out, and method simple, be easy to grasp, in engineering reality, be widely adopted.The engineering setting method of PID controller parameter mainly contains aritical ratio method, response curve method and damped method, and three kinds of methods respectively have its characteristics, and its common ground all is by test, according to the engineering experience formula controller parameter is adjusted then.But no matter adopt the resulting controller parameter of any method, all need in actual motion, adjust at last with perfect.General employing is the aritical ratio method now.It is as follows to utilize this method to carry out the step of adjusting of PID controller parameter: (1) at first preselected enough short sampling period allows system works; (2) additional proportion controlling unit only occurs threshold oscillation up to system to the step response of input, writes down at this moment ratio scale-up factor and threshold oscillation cycle; (3) under certain degree of control, calculate the parameter of PID controller by formula.
Claims (5)
1, a kind of Controlling System of isodiametric growth of crystal has
Crystal growing furnace;
Detect the crystal diameter test section of crystal diameter variable signal in the interior crystal growing process of stove;
Gather melt temperature signal and the heater voltage current signal of well heater and the crucible temperature control part of the interior melt temperature of feedback control stove in the stove;
Gathering crystal draws high the crystal that speed signal and feedback adjustment crystal draw high speed in real time and draws high the speed control part;
It is characterized in that:
Also has a controller (7); Described controller (7) is used for receiving respectively from described crystal diameter test section, described crystal and draws high speed control part and described crucible temperature control part detection signal separately, described controller (7) is to use Fuzzy control and PID control bonded arithmetic calculation to go out crystal and draw high speed-regulating signal and feed back to described crystal and draw high the speed control part crystal is drawn high speed adjustment, and calculates the heating power conditioning signal and feed back to the controller that described crucible temperature control part is adjusted the temperature of melt.
2, the Controlling System of a kind of isodiametric growth of crystal according to claim 1 is characterized in that: described crucible temperature control partly comprises crucible temperature testing circuit (3), heater voltage current detection circuit (4) and heating power regulating circuit (6); The output terminal of the crucible temperature detection signal of described crucible temperature testing circuit (3) is electrically connected with the crucible temperature detection signal input terminus of described controller (7); The heater voltage current detection signal output terminal of described heater voltage current detection circuit (4) is electrically connected with the heater voltage current detection signal input terminus of described controller (7); The heating power of described controller (7) is regulated output terminal and is electrically connected with the heating power adjusting input terminus of described heating power regulating circuit (6).
3, the Controlling System of a kind of isodiametric growth of crystal according to claim 1 is characterized in that: described crystal draws high the speed controlling portion branch and comprises that crystal draws high tachometer circuit (2) and crystal draws high alignment circuit (5); The crystal that described crystal draws high tachometer circuit (2) draws high the tachometer signal output terminal and draws high the tachometer signal input terminus with the crystal of described controller (7) and be electrically connected; The crystal of described controller (7) draws high crystal that speed-regulating signal output terminal and described crystal draw high alignment circuit (5) and draws high the speed-regulating signal input terminus and be electrically connected.
4, the Controlling System of a kind of isodiametric growth of crystal according to claim 1, it is characterized in that: described crystal diameter test section comprises a crystal diameter testing circuit (1), and the crystal diameter detection signal output terminal of described crystal diameter testing circuit (1) is electrically connected with the crystal diameter detection signal input terminus of controller (7).
5, the Controlling System of a kind of isodiametric growth of crystal according to claim 1, it is characterized in that: controller (7) is a programmable logic controller, and this programmable logic controller has simulating signal input block (71), CPU (72), simulating signal output unit (71), the I/O interface that connects by bus.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520011105 CN2825658Y (en) | 2005-03-28 | 2005-03-28 | Control system for crystal isodiametric growth |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520011105 CN2825658Y (en) | 2005-03-28 | 2005-03-28 | Control system for crystal isodiametric growth |
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| CN2825658Y true CN2825658Y (en) | 2006-10-11 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010048790A1 (en) * | 2008-10-28 | 2010-05-06 | Hui Mengjun | A method for controlling czochralski crystal growth |
| CN101748477B (en) * | 2008-12-19 | 2013-10-23 | 北京太克易航科贸有限公司 | Intelligent PID control method for controlling growth process of monocrystalline silicon and system thereof |
| CN106245116A (en) * | 2016-08-31 | 2016-12-21 | 天通银厦新材料有限公司 | A kind of sapphire crystal growth equipment and technique thereof |
| CN106527119A (en) * | 2016-11-03 | 2017-03-22 | 东华大学 | Fuzzy control-based differentiation first PID (proportion integration differentiation) control system |
| CN111254485A (en) * | 2018-12-03 | 2020-06-09 | 隆基绿能科技股份有限公司 | Method and device for controlling isometric growth of monocrystalline silicon and storage medium |
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2005
- 2005-03-28 CN CN 200520011105 patent/CN2825658Y/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010048790A1 (en) * | 2008-10-28 | 2010-05-06 | Hui Mengjun | A method for controlling czochralski crystal growth |
| CN101748477B (en) * | 2008-12-19 | 2013-10-23 | 北京太克易航科贸有限公司 | Intelligent PID control method for controlling growth process of monocrystalline silicon and system thereof |
| CN106245116A (en) * | 2016-08-31 | 2016-12-21 | 天通银厦新材料有限公司 | A kind of sapphire crystal growth equipment and technique thereof |
| CN106527119A (en) * | 2016-11-03 | 2017-03-22 | 东华大学 | Fuzzy control-based differentiation first PID (proportion integration differentiation) control system |
| CN106527119B (en) * | 2016-11-03 | 2019-07-23 | 东华大学 | Derivative-precedence PID system based on fuzzy control |
| CN111254485A (en) * | 2018-12-03 | 2020-06-09 | 隆基绿能科技股份有限公司 | Method and device for controlling isometric growth of monocrystalline silicon and storage medium |
| CN111254485B (en) * | 2018-12-03 | 2021-05-04 | 隆基绿能科技股份有限公司 | Method and device for controlling isometric growth of monocrystalline silicon and storage medium |
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