CN211350689U - Surface-modified light-emitting chip - Google Patents
Surface-modified light-emitting chip Download PDFInfo
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- CN211350689U CN211350689U CN201920870536.7U CN201920870536U CN211350689U CN 211350689 U CN211350689 U CN 211350689U CN 201920870536 U CN201920870536 U CN 201920870536U CN 211350689 U CN211350689 U CN 211350689U
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Abstract
The utility model provides a surface-modified luminous chip, which comprises a luminous chip and a diffusion glue layer; the diffusion glue layer covers the top of the front surface of the light-emitting chip so as to form the light-emitting chip with the modified surface. The utility model discloses the at least advantage effect that has: covering the top of the front side of the light source by using a diffusion adhesive layer to achieve the self-atomization effect; directly reduces the visual defect of bright spots generated on the luminous surface, and maintains the five-surface luminescence to ensure that the luminous surface has uniform luminosity or surface illumination.
Description
Technical Field
The utility model relates to a luminous chip of surface modification. In particular, the surface-modified light emitting chip is a light emitting chip with a diffusion glue layer modification on the top of the front surface.
Background
The conventional backlight device for a tv panel and the conventional flat illumination device use a light emitting chip (LED) emitting light from the top in a single direction (emitting angle 120 degrees), which generates bright spots, so that a lens is required to enlarge the optical angle and reduce the bright spots on the top, and a diffuser panel is added to enhance the atomization effect of the lens, thereby achieving the uniform light emission and uniform surface illumination.
Since the diffusion sheet, the lens and the light emitting chip must maintain a proper distance, the lens and the diffusion sheet can effectively perform the atomization function to make the light emitted from the diffusion sheet uniform, and the lens has a certain thickness, the thickness of the panel backlight device or the lighting device including the light emitting chip, the lens and the diffusion sheet is usually more than 3 cm, and the panel backlight device or the lighting device including the light emitting chip, the lens and the diffusion sheet cannot be applied to the panel electronic products or the lighting devices with advanced thin designs.
In view of the above, in the panel and lighting industry, it is an important issue to be solved and researched for developing a light emitting chip applicable to a panel electronic product or a lighting device with a thin design.
Disclosure of Invention
In view of the above background, the present invention provides a surface-modified light emitting chip and a method for manufacturing the same to overcome the technical bottleneck encountered in the prior art, thereby achieving the desired purpose of the industry.
One objective of the present invention is to provide a surface-modified light-emitting chip, which comprises a light-emitting chip and a diffusion adhesive layer; and the diffusion glue layer covers the top of the front surface of the light-emitting chip, thereby forming the light-emitting chip with the modified surface.
Specifically, the manufacturing implementation of the light emitting Chip includes wafer level packaging (Chip Scale Package), melting light emitting glue, dispensing, or attaching of a light emitting film body.
In particular, the light emitting surface of the surface-modified light emitting chip is a five-sided surface. The light output quantity of the top of the front surface can be adjusted by the diffusion adhesive layers with different transmittances, and the whole light output of the surface-modified light-emitting chip is uniform by the light output from four sides. Therefore, the utility model provides a surface modification's luminous chip has good luminous degree of consistency, does not have the inhomogeneous problem of sending out light.
Specifically, the diffusion glue layer has a transmittance of 10-90%; preferably, the diffusion glue layer has 20 to 50% of transmittance.
Drawings
Fig. 1 is a cross-sectional view of a surface-modified light emitting chip of the wafer level package manufacturing process of the present invention.
[ description of main element symbols ]
1: surface-modified light-emitting chip packaged at wafer level
11: chip and method for manufacturing the same
12: luminous powder layer
13: diffusion glue layer
Detailed Description
The foregoing and other features, aspects and utilities of the present invention will be apparent from the following more particular description of a preferred embodiment of the invention as illustrated in the accompanying drawings. In order that the invention may be more fully understood, specific steps and components thereof will be set forth in the following description. It is apparent that the practice of the invention is not limited to the specific details known to those skilled in the art. In other instances, well-known components or steps have not been described in detail so as not to unnecessarily obscure the present invention. The present invention is described in detail with reference to the following preferred embodiments, but in addition to the detailed description, the present invention can be widely applied to other embodiments, and the scope of the present invention is not limited by the claims.
According to a first embodiment of the present invention, the present invention provides a surface-modified light emitting chip, comprising a light emitting chip and a diffusion adhesive layer; and the diffusion glue layer covers the top of the front surface of the light-emitting chip, thereby forming the light-emitting chip with the modified surface.
In an embodiment, the manufacturing implementation of the light emitting chip includes wafer level packaging, melting light emitting glue, dispensing, attaching a light emitting film body, or a combination thereof.
The following are examples of surface modified light emitting chips fabricated by wafer level packaging.
In one embodiment, the wafer level package is formed by wrapping the light emitting powder layer on the surface of the chip.
In one embodiment, the light-emitting powder layer includes polymer glue, silica gel, epoxy resin or a combination thereof
In one embodiment, the light-emitting powder layer is formed by light-emitting powder or a light-emitting film body.
In one embodiment, the luminescent powder comprises phosphor powder, phosphor powder or any powder capable of guiding light.
In one embodiment, the light-emitting film body comprises polymer glue, ceramic powder, graphene powder, glass powder, epoxy resin, silica gel, wax or paraffin.
In one embodiment, the diffusion adhesive layer comprises polymer glue, silica gel, epoxy resin, atomized substances or a combination thereof. Specifically, the diffusion glue layer contains glue and a material for atomizing the glue. The material for atomizing the diffusion glue layer has the function of atomizing the diffusion glue layer.
In one embodiment, the diffusion adhesive layer has a light transmittance of 10-90%; preferably, the diffusion glue layer has a light transmittance of 20-50%.
In one embodiment, the surface-modified light emitting chip 1 of the present invention is a wafer level package, and its cross-sectional surface is shown in fig. 1. Wherein the surface of the chip 11 is covered by the luminescent powder layer 12, and then the top of the front surface is covered by the diffusion glue layer 13, thereby forming the surface-modified luminescent chip 1 of the present invention.
In another embodiment, the light-emitting powder layer 12 is formed by light-emitting powder or light-emitting film. Wherein the luminescent powder comprises fluorescent powder, phosphor powder or any powder capable of guiding light; the luminous film body comprises polymer glue, ceramic powder, graphene powder, glass powder, epoxy resin, silica gel, wax or paraffin.
The diffusion adhesive layer 13 has a light transmittance of 10-90%; preferably, the light transmittance is 20 to 50%.
To sum up, the light emitting surface of the surface-modified light emitting chip of the present invention is five surfaces. The brightness of the light emitted from the top of the front surface of the light emitting chip can be adjusted by the diffusion adhesive layers with different transmittances, so that bright spots are reduced, and the light emitted from four sides is used for homogenizing the whole light emitted from the surface-modified light emitting chip. Therefore, the utility model provides a surface modification's luminous chip has good luminous degree of consistency, does not have the inhomogeneous problem of sending out light.
The preparation method of the first embodiment of the present invention comprises: providing a light emitting chip; and fixing the diffusion glue layer on the top of the front surface of the light-emitting chip by a fixing program, thereby forming the surface-modified light-emitting chip.
In an embodiment, the manufacturing implementation of the light emitting chip includes wafer level packaging, melting light emitting glue, dispensing, attaching a light emitting film body, or a combination thereof.
The following are embodiments of surface modified light emitting chips of a wafer level package manufacturing process.
In one embodiment, the wafer level package process includes providing a light emitting powder or a light emitting film; and covering a diffusion glue layer on the top of the front surface of the light-emitting chip, thereby finishing the surface-modified light-emitting chip in the wafer level packaging and manufacturing process.
Specifically, the fixing procedure comprises a coating procedure, an ultraviolet irradiation procedure, a heating procedure, a hot-melt pressing procedure or a combination thereof.
In one embodiment, the light-emitting powder includes phosphor, or any powder capable of guiding light.
In one embodiment, the light-emitting film body includes polymer glue, ceramic powder, graphene powder, glass powder, epoxy resin, silica gel, wax or paraffin.
In one embodiment, the light-emitting powder layer includes polymer glue, silica gel, epoxy resin or a combination thereof.
In one embodiment, the diffusion adhesive layer comprises polymer glue, silica gel, epoxy resin, atomized substances or a combination thereof. Specifically, the diffusion glue layer contains glue and a material for atomizing the glue. The material for atomizing the diffusion glue layer has the function of atomizing the diffusion glue layer.
In one embodiment, the diffusion adhesive layer has a light transmittance of 10 to 90%. Preferably, the diffusion glue layer has a light transmittance of 20-50%.
In one embodiment, the method for manufacturing a surface-modified light emitting chip of the present invention is a surface-modified light emitting chip 1 in a wafer level package manufacturing process, comprising the steps of: providing a chip 11; forming a luminescent powder layer 12 on the surface of the chip 11 by the luminescent powder or the luminescent film body through a fixing procedure, thereby forming a luminescent chip; and performing a fixing procedure to fix the diffusion adhesive layer 13 on the top of the front surface of the light emitting chip, thereby forming the surface-modified light emitting chip 1 in the wafer level package manufacturing process.
The fixing process includes an ultraviolet irradiation process, a heating process, a hot melt process, or a combination thereof. Preferably, the operating temperature range of the heating procedure is 20-200 ℃.
In another embodiment, the step of manufacturing the light-emitting film body includes mixing light-emitting powder, such as phosphor powder or phosphor powder, and glue, such as silica gel or epoxy resin, and then semi-curing the mixture to form a film.
The fixing process further includes a surface powder adhesion process, ultraviolet irradiation, heating or hot melt pressing, and the like.
According to the utility model, the upper layer of the surface-modified luminous chip is a diffusion glue layer, a luminous powder layer is arranged in the middle, and the luminous surface is five surfaces.
In summary, according to the present invention, a surface-modified light emitting chip is provided. The utility model discloses a luminous chip of surface modification is five light-emitting, and only the front top covers the diffusion glue film that can regulate and control the transmittance to utilize the even luminous chip's of whole surface modification of light-emitting on all the other four sides light-emitting. Accordingly, the advantages and unexpected effects of the surface-modified light emitting chip of the present invention include: (1) covering the top of the front side of the light source by using a diffusion adhesive layer to achieve the self-atomization effect; (2) directly reduces the visual defect of bright spots generated on the luminous surface, and (3) maintains the five-surface luminescence to ensure that the five-surface luminescence has uniform luminosity or surface illumination, thereby overcoming the bottleneck of the prior art and being widely applied to the thinning and lightening panel backlight device or the plane illumination industry.
Although the present invention has been described with reference to specific examples, the scope of the present invention is not limited thereto, and those skilled in the art will appreciate that various modifications and changes can be made without departing from the spirit and scope of the present invention. In addition, the abstract and the title are provided to assist the searching of patent documents and are not intended to limit the scope of the present invention.
Claims (4)
1. A surface-modified light-emitting chip is characterized in that: it is composed of a light-emitting chip and a diffusion glue layer; the manufacturing implementation mode of the light-emitting chip is wafer level packaging, and the wafer level packaging is to wrap a light-emitting powder layer on the surface of the chip; and the diffusion glue layer only covers the top of the front surface of the light-emitting chip, thereby forming the light-emitting chip with the modified surface.
2. The surface-modified light-emitting chip of claim 1, wherein: the light emitting surface is five surfaces.
3. The surface-modified light-emitting chip of claim 1, wherein: the diffusion adhesive layer has light transmittance of 10-90%.
4. The surface-modified light-emitting chip of claim 3, wherein: the diffusion adhesive layer has 20-50% of light transmittance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920870536.7U CN211350689U (en) | 2019-06-11 | 2019-06-11 | Surface-modified light-emitting chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920870536.7U CN211350689U (en) | 2019-06-11 | 2019-06-11 | Surface-modified light-emitting chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211350689U true CN211350689U (en) | 2020-08-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920870536.7U Active CN211350689U (en) | 2019-06-11 | 2019-06-11 | Surface-modified light-emitting chip |
Country Status (1)
| Country | Link |
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| CN (1) | CN211350689U (en) |
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2019
- 2019-06-11 CN CN201920870536.7U patent/CN211350689U/en active Active
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