CN211350683U - Semiconductor light-emitting element - Google Patents
Semiconductor light-emitting element Download PDFInfo
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- CN211350683U CN211350683U CN201922185521.XU CN201922185521U CN211350683U CN 211350683 U CN211350683 U CN 211350683U CN 201922185521 U CN201922185521 U CN 201922185521U CN 211350683 U CN211350683 U CN 211350683U
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Abstract
A semiconductor light emitting element comprising: a first conductive type semiconductor layer, a second semiconductor layer, and a light emitting layer between the first conductive type semiconductor layer and the second semiconductor layer; the first electrode is formed on the first conductive semiconductor layer and comprises a routing electrode and an expansion strip, wherein the routing electrode comprises a reflecting layer, a blocking layer and a routing layer, the expansion strip comprises the reflecting layer and the blocking layer, the reflecting layer is used for reflecting light from the light emitting layer, the blocking layer is used for blocking diffusion of the reflecting layer, and the routing layer is used for external routing connection; the routing electrode comprises a stress buffer layer inserted into the barrier layer or between the reflecting layer and the barrier layer and used for buffering the stress of the barrier layer; the extension electrode stress-free buffer layer is inserted into the barrier layer or between the reflecting layer and the barrier layer.
Description
Technical Field
To a semiconductor light emitting element having an electrode bonding portion and an expansion bar.
Background
The conventional forward LED structure is shown in fig. 1-2, and includes a substrate, a semiconductor light emitting sequence 101 on the substrate, a first electrode 105 and a second electrode 106 disposed on the semiconductor light emitting sequence 101, wherein at least the first electrode 105 is composed of a wire bonding electrode 1051 and an expansion strip 1052, and the electrodes mainly include the following layers stacked on a semiconductor layer: a reflective metal film, a barrier film, and a wiring film. Most of the wire bonding electrodes and the spreading bars of the normal chip have the same element composition, and Al is used as a reflecting layer, and Pt is used as a barrier layer for blocking Al precipitation. On one hand, in order to ensure that the chip routing can not drop the electrode, the existing chip electrode structure mostly adopts a Ti layer with lower stress to buffer the stress of the Pt barrier layer. However, in order to ensure the brightness of the chip, the electrode expansion strip is designed to be thin, the current density of the expansion strip is relatively high, and the expansion strip is easily burnt due to the Ti layer with poor heat conduction and electric conduction effects.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem of the high easy burn of extension strip current density, the utility model provides a following semiconductor light emitting element, include:
a first conductive type semiconductor layer, a second conductive type semiconductor layer, and a light emitting layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; the first electrode is formed on the first conductive semiconductor layer and comprises a routing electrode and an expansion strip, wherein the routing electrode comprises a reflecting layer, a blocking layer and a routing layer, the expansion strip comprises the reflecting layer and the blocking layer, the reflecting layer is used for reflecting light from the light emitting layer, the blocking layer is used for blocking diffusion of the reflecting layer, and the routing layer is used for external routing connection and is characterized in that: the routing electrode comprises a stress buffer layer inserted into the barrier layer or between the reflecting layer and the barrier layer and used for buffering the stress of the barrier layer, and the stress-free buffer layer of the extension electrode is inserted into the barrier layer or between the reflecting layer and the barrier layer.
Preferably, the barrier layers of the routing electrode and the expansion strip are multiple layers, and the stress buffer layer of the routing electrode is arranged between the adjacent barrier layers.
Preferably, the barrier layers of the routing electrode and the expansion strip are single layers, and the stress buffer layer of the routing electrode is arranged between the barrier layer and the reflecting layer.
Preferably, the routing electrode and the reflective layer of the extension bar are made of the same material, and the routing layer of the extension bar optionally has a routing layer, and more preferably, the routing electrode and the routing layer of the extension bar are also made of the same material.
Preferably, the stress buffer layer of the routing electrode comprises Ti.
Preferably, the barrier layers of the routing electrodes and the spreading bars are of the same or different materials.
Preferably, the thermal conductivity of the barrier layer of the routing electrode is lower than that of the barrier layer of the expansion strip. Or preferably, the resistivity of the barrier layer of the routing electrode is higher than that of the barrier layer of the extension strip.
Preferably, the thermal conductivity of the barrier layer of the expansion strip is 30W/(m.k) to 100W/(m.k) or higher than 100W/(m.k).
Preferably, the resistivity of the barrier layer of the extension electrode is lower than 200n Ω. m or more preferably the resistivity of the current barrier layer of the extension electrode is lower than 100n Ω. m.
Preferably, the barrier layer of the expansion strip is at least one of Pt or Ni.
Preferably, the barrier layer of the extension strip is Ni or Cu.
Preferably, the routing electrodes and the reflecting layers of the expansion strips are made of Al, and the routing electrodes and the routing layers of the expansion strips are made of Au.
Preferably, the semiconductor light emitting element is a (Al, Ga, In) N semiconductor element.
The expansion strip can bear higher current density or improve thermal conductivity based on the improvement of eliminating the stress buffer layer of the expansion strip, and the burn resistance of the expansion strip can be improved.
Drawings
FIGS. 1 to 2 are schematic cross-sectional and planar structures of a conventional semiconductor light-emitting device.
Fig. 3 to 4 are schematic cross-sectional and planar structures of the semiconductor light emitting device according to the first embodiment.
Fig. 5 to 6 show metal stacks of the wire bonding electrode and the extension bar of the first electrode of the semiconductor light emitting device according to the first embodiment.
Reference numerals:
100: a substrate; 101: a semiconductor light emitting sequence stack layer; 102: a first conductive type semiconductor layer; 103: a light emitting layer; 104: a second conductive type semiconductor layer; 105: a first electrode; 1051: routing electrodes; 1052: an extension bar; 106: a second electrode; 107: a transparent conductive layer; 108: a transparent dielectric layer; 109: a protective layer; 1051a, 1052 a: an ohmic contact layer; 1051b, 1052 b: a reflective layer; 1051d, 1052 d: a barrier layer; 1051 e: a stress buffer layer; 1051f, 1052 f: and a wire bonding layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention.
In the following embodiments of the present invention, words indicating orientation, such as "upper", "lower", "left", "right", "horizontal", "vertical", etc., are referred to only for better understanding of the present invention by those skilled in the art, and should not be construed as limiting the present invention.
Example one
The utility model provides a following emitting diode 10, as the section schematic diagram and the planar structure schematic diagram that fig. 3~4 are shown, it includes as follows piles up the layer: a substrate 100, a semiconductor light emitting sequence 101, a first electrode 105 and a second electrode 106.
As shown in fig. 3, the substrate 100 may be an insulating substrate or a conductive substrate. The substrate 100 may be a growth substrate, such as a sapphire substrate, for growing the semiconductor light emitting sequence 101, or a transparent bonding layer of the semiconductor light emitting sequence 101 may be bonded on the substrate 100. The substrate 100 includes a first surface, a second surface, and a sidewall, wherein the first surface and the second surface are opposite, and the substrate 100 includes a plurality of protrusions formed at least at a partial region of the first surface. For example, the substrate 100 may be a patterned sapphire substrate.
A semiconductor light emitting sequence 101 is stacked on the first surface of the substrate 100, the semiconductor light emitting sequence 101 includes a first conductive type semiconductor layer 102, a light emitting layer 103 and a second conductive type semiconductor layer 104, and a specific semiconductor light emitting sequence 101 may include a iii-v type nitride-based semiconductor, for example, a semiconductor such As (Al, Ga, In) N or a phosphide-based semiconductor including (Al, Ga, In) P or an arsenide-based semiconductor including (Al, Ga, In) As. The first conductive type semiconductor layer 102 may include p-type impurities (e.g., Mg, Sr, Ba) and the second conductive type semiconductor layer 102 may include n-type impurities (e.g., Si, Ge, Sn). Also, the above impurity types may be reversed. The light-emitting layer 103 may include a multiple quantum well structure (MQW) and the elemental composition ratio of the semiconductor may be adjusted so as to emit a desired wavelength. In the present embodiment, the second conductive type semiconductor layer 104 may be an n-type semiconductor layer.
As shown in fig. 3, the first surface of the second conductive type semiconductor layer 104 is divided into a region covered with the mesa 201 and a region where the first electrode 105 is electrically connected. The mesa 201 includes the light emitting layer 103 and the first conductive type semiconductor layer 102 combination on the light emitting layer 103.
The first electrode 105 is formed to cover the first conductive type semiconductor layer 102 and electrically connected thereto, and the second electrode 106 is formed to cover the second conductive type semiconductor layer 104 and electrically connected thereto.
The first electrode 105 comprises a routing electrode 1051 and an expansion strip 1052 horizontally extending from the routing electrode 1051, wherein the routing electrode 1051 is used for external routing connection and has a block shape, such as a circular block shape or a square block shape, the expansion strip 1052 horizontally extends from the horizontal edge of the block-shaped routing electrode 1051 and is in a strip shape, the expansion strip 1052 is optionally designed into one or more strips according to expansion efficiency, and the width of the expansion strip 1052 is between 1-20 micrometers. And the second electrode 106 comprises at least a wire bond electrode and optionally an extension strip extending horizontally from the wire bond electrode.
As shown in fig. 5-6, wire bonding electrode 1051 and expansion strip 1052 each include reflective layers 1051b and 1052b, barrier layers 1051d and 1052d, and wire bonding layers 1051f and 1052 f.
Wherein reflective layers 1051b and 1052b are located adjacent to the lower or lowermost surface of the routing and spreading bars of first electrode 105 for reflecting light emitted from semiconductor light emitting sequence 101 to the uppermost surface of first electrode 105. The reflective layer 1051b is preferably aluminum. Preferably, an ohmic contact layer 1051a is further included between the reflective layer 1051b of at least the wire bonding electrode 1051 and the stacked layer of the semiconductor light emitting sequence 101, and the ohmic contact layer 1051b can be in direct contact with the first conductive type conductive layer 102 to form an ohmic contact. The ohmic contact layer 1051a is thin, preferably less than 10nm, such as between 1 nm and 5nm, and the ohmic contact layer 1051a minimizes the effect on the reflectivity of the reflective layer 1051 b. Preferably, the ohmic contact layer is Ni or Cr. Optionally, an ohmic contact layer 1052a is further included between the reflective layer 1052b of the spreading strip 1052 and the stacked layers of the semiconductor light emitting sequence 101.
The thickness of the reflective layers 1051b and 1052b is 100-1000 nm.
The barrier layer 1051d of the routing electrode may be at least one of Pt, Ni, etc., or a combination of these metals, and these metals have a good barrier effect on Al. Preferably, the thickness of the barrier layer 1051d is 200-1000 nm.
Since the barrier layers such as Pt and Ni are more stressed, cleavage easily occurs on the surface of the reflective layer Al, and as the thickness of the barrier layers 1051d and 1052d is larger, the stress action is stronger and cleavage easily occurs. Therefore, as shown in fig. 5, in order to reduce the stress of the barrier layer, it is necessary to buffer the stress of the barrier layer by inserting a stress buffer layer 1051c, which is a stress buffer layer between the barrier layer and the buffer layer, or a stress buffer layer 1051f, which is inserted in the barrier layer 1051d, into the first electrode.
Preferably, as shown in fig. 5, the barrier layers 1051d may be two or more layers, for example, three to five layers, and a stress buffer layer 1051e is inserted between adjacent barrier layers 1051d to buffer the stress of the barrier layers 1051 d. And a stress buffer layer 1051e may be interposed between the barrier layer 1051d closest to the reflective layer 1051 and the reflective layer 1051, and the stress buffer layer 1051e may also mention the adhesion function.
Or when the barrier layer 1051d is a single layer, the stress buffer layer 1051c is inserted between the reflective layer 1051b and the barrier layer 1051d, and the stress buffer layer 1051c can also function as an adhesion.
Preferably, the total thickness of the stress buffer layer 1051c is 200 to 500 nm.
In the conventional process, the routing electrode 1051 and the expansion strip 1052 are formed in the same evaporation step, and the reflective layer, the barrier layer and the stress buffer layer are formed by changing the metal evaporation raw material. And the electrode materials of routing electrode 1051 and expansion strip 1052 have the same composition, and the common use of traditional stress buffer layer is Ti, which can have good stress buffer effect on the barrier layer and better diffusion barrier effect on Al. However, in order to ensure the brightness of the chip, the expansion strip needs to be designed to be thin, the current density of the expansion strip is relatively high, and the expansion strip is easily burned due to the Ti layer with poor heat conduction and electric conduction effects.
To improve the burn-in susceptibility of the spreading bars, it was found that the stress buffer layer 1051e of routing electrode 1051 has a higher resistivity or a lower thermal conductivity than barrier layer 1051 d. For example, when the barrier layer is Pt, and the stress buffer layer is Ti, the resistivity of Ti is 420-833 n Ω. m, the thermal conductivity of Ti is 21.9W/m.k, and the resistivity of Pt is 105.0n Ω. m, the thermal conductivity of Pt is 71.6W/mk. Therefore, as the improvement of the present invention, the expansion strip 1052 cancels the stress buffering layer, so that the expansion strip 1052 can transmit current more easily, and the burn problem caused by current congestion of the expansion strip 1052 or the burn problem of the expansion strip 1052 caused by thermal congestion of the expansion strip 1052 can be improved.
The barrier layer 1052d of the expansion strip 1052 may specifically have the same element composition as the barrier layer 1051d of the routing electrode 1051, such as at least one of Pt, Ni, etc., or a combination of these metals. Since no stress buffer layer is required, the barrier layer 1052d of the expansion strip 1052 is preferably a single layer. Preferably, the thickness of the barrier layer 1052d is 500-2500 nm. The barrier layer 1052d can block the diffusion of Al, and has a thermal conductivity higher than that of the material of the stress buffer layer 1051f of the wire bonding electrode, and a resistivity lower than that of the material of the stress buffer layer 1051f of the wire bonding electrode.
The routing electrodes 1051 and the expansion strips 1052 respectively comprise routing layers 1051f and 1052f which cover the surfaces and the side walls of the barrier layers 1051d and 1052d, and the preferred routing layers 1051f and 1052f are Au for external routing connection. For the expansion strip 1052, a wire bond layer 1052f is not necessary. Routing layer 1051f is thicker than 50 nm.
As shown in fig. 3, preferably, the surface of the first conductive type semiconductor layer 1052 is covered with a transparent conductive layer 107, such as ITO, and a portion of the bonding electrode 1051 (e.g., edge portion) of the first electrode 105 and the extension strip 1052 are formed on the transparent conductive layer 107, wherein the transparent conductive layer 107 has a horizontal lateral extension effect on the current.
Or preferably, the light emitting device further includes a transparent dielectric layer 108 located between a portion of the ohmic contact layer 1051b and the first conductive type semiconductor layer 102, which can block the longitudinal current flowing direction of the first electrode 1051, so as to promote the horizontal current flowing direction between the routing electrode and the spreading bar, and the transparent dielectric layer 108 and the reflective layer 1051b can form an ODR structure to improve the reflectivity.
A protective layer 109 may be included between the first electrode 1051 and the first conductive type semiconductor layer 102 to cover the top surface and sidewalls of the semiconductor light emitting sequence 101 and portions of the surfaces of the first electrode 105 and the second electrode 106 for moisture insulation. The passivation layer 109 covers the wire bonding electrode 1051 and at least exposes the top surface of the wire bonding layer 1051f for external wire bonding. The protective layer 109 may be a material such as silicon oxide or silicon nitride.
As an embodiment, routing electrode 1051 includes reflective layer 1051b, stress buffer layer 1051e, barrier layer 1051d, and routing layer 1051f, and the spreader includes reflective layer 1052b, barrier layer 1052d, and optionally routing layer 1052 f. The stress buffer layer 1051e of the routing electrode 1051 is selected from: ti, barrier layers 1051d and 1052d of wire bond 1051 and expansion straps 1052 are both Pt. Wherein the resistivity of Ti is 420-833 n Ω. m, and the resistivity of Pt is 105n Ω. m. The reflective layer 1051b of routing electrode 1051 is made of the same material as the reflective layer 1052b of the electrode of expansion strip 1052, such as Al, and the routing layer 1051f of routing electrode 1051 is made of the same material as the routing layer 1052f of the electrode of expansion strip 1052, such as Au.
In order to make the utility model discloses an electrode structure, the utility model provides a pair of LED chip's manufacturing method, including following step:
s101: a material of (Al, Ga, In) N is grown on the substrate 100 to form an epitaxial layer.
The material of the substrate of the present invention may be sapphire, silicon carbide or silicon, or may be other semiconductor materials, and the substrate in this embodiment is preferably a sapphire substrate.
The semiconductor light emitting sequence stack layer 101 is grown by a prior art method, typically: a method of Metal Organic Chemical Vapor Deposition (MOCVD) is employed, for example, a layer of a second conductivity type semiconductor layer such as N-type (Al, Ga, In) N, an active layer, and a layer of a first conductivity type semiconductor layer such as P-type (Al, Ga, In) N are sequentially grown on a substrate.
In order to improve the yield of the subsequent etching process, the thickness of the epitaxial layer is 4-10 μm. The brightness of the LED chip can be reduced, and the LED chip is easy to crack during subsequent etching. However, the thickness of the epitaxial layer is larger than 10 μm, the brightness of the LED chip is reduced, and the difficulty and time of etching are increased.
S102: the semiconductor light emitting sequence stack layer 101 is etched to form an exposed region penetrating the first conductive type semiconductor layer 102 such as a layer of P-type (Al, Ga, In) N, the light emitting layer 103, and extending to the second conductive type semiconductor layer 104 such as a layer of N-type (Al, Ga, In) N.
Using photoresist or SiO2And etching the stacked layer of the semiconductor light-emitting sequence 101 by using an inductively coupled plasma etching process or a reactive ion etching process as a mask to form a bare region which penetrates through the P-type (Al, Ga, In) N layer and the active layer and extends to the N-type Al, Ga, In) N layer.
In order to improve the light-emitting efficiency of the chip and the side light-emitting efficiency of the epitaxial layer, the side wall of the exposed area has a certain inclination angle.
S103: and sequentially forming a transparent dielectric layer 108 and a transparent conductive layer 107 on the P-type Al, Ga and In) N layer to form the LED wafer.
Using photoresist or SiO2And as a mask, evaporating a transparent dielectric layer on the surface of the P-type (Al, Ga, In) N layer by adopting an electron beam evaporation process. Preferably, the material of the transparent dielectric layer is SiO2Or Si3N4。
S104: forming the first electrode and the second electrode, firstly depositing an ohmic contact layer, such as a Cr layer, on the first electrode 105 bonding area, the second electrode 106 bonding area and the first electrode 105 extension strip 1052 area, and then sequentially forming a reflective layer, a barrier layer and a bonding layer on the first electrode and the second electrode bonding area. And the barrier layers of the routing electrodes of the first electrode and the second electrode are all multilayer, for example 2-5 layers, wherein a stress buffer layer is arranged between the adjacent barrier layers.
S106: a metal stack is deposited on the ohmic contact layer in the area of the current spreading strips 1052 of the first electrode 105, including the formation of a reflective layer, a barrier layer and a wire bonding layer in that order, to form the spreading strips 1052 of the first electrode 105. The barrier layer of the first electrode is a single layer.
In one embodiment, the routing electrode 1051 of the first electrode includes: the reflecting layer 1051b, the reflecting layer 1051b is an Al layer, and the thickness of Al is 300 nm; the barrier layer 1051d is a Pt layer, the Pt layer is 3-5 layers, the stress buffer layer is a Ti layer, the Ti layer is inserted between the adjacent Pt layers, the total thickness of the Ti layer is 300nm, and the total thickness of the Pt layer is 200 nm; the routing layer 1051f is made of Au, and the thickness of the routing layer 1051f is 2000 nm; wherein the expansion strip 1052 of the first electrode 105 does not have the stress buffer layer 1052e, the reflective layer 1052b of the expansion strip 1052 of the first electrode 105, the reflective layer 1051b is an Al layer, and the thickness of Al is 300 nm; the barrier layer 1052d is a Pt layer, the Pt layer is a single layer, and the total thickness of the Pt layer is 600 nm; bonding layer 1052f is Au, and the thickness of bonding layer 1052f is 2000 nm.
Example two
In order to improve the thermal conductivity of the extension strip 1052, the stress barrier layer 1051d of the extension strip 1052 can be eliminated, and as an alternative embodiment, the barrier layer of the extension strip 1052 of the first electrode can be further selected to be a material with lower resistivity, such as the barrier layer of the extension electrode has a resistivity lower than 200n Ω · m or more preferably the current barrier layer of the extension electrode has a resistivity lower than 100n Ω · m, or a material with higher thermal conductivity, such as the barrier layer of the extension strip has a thermal conductivity between 30W/(m.k) to 100W/(m.k) or higher than 100W/(m.k).
As an embodiment, the barrier layer of the extension strip 1052 of the first electrode may be selected from at least one of Pt, Ni and Cu, such as Ni alone, Cu layer as a barrier layer or a combination of Ni and Cu or a combination of Pt and Ni and Cu, where Ni has an electrical resistivity of 69.3n Ω · m, Ni has a thermal conductivity of 90W/(m.k), Cu has an electrical resistivity of 17.0n Ω · m, and Ni has a thermal conductivity of 401.0W/(m.k). And Ni and Cu also have barrier property to Al, so that the Ni and Cu can be used as a barrier layer instead of the conventional Pt.
The first electrode 105 still comprises a routing electrode 1051 and an expansion strip 1052 shown in fig. 3-5, wherein the routing electrode 1051 comprises a reflecting layer 1051b, a stress buffer layer 1051e, a barrier layer 1051d and a routing layer 1051 f; expansion strip 1052 includes reflective layer 1052b, barrier layer 1052d and wire bonding layer 1052f, and expansion strip 1052 is stress-free.
In one embodiment, reflective layer 1051b of routing electrode 1051 is Al, barrier layer 1051d is at least one of Pt, Rh, and Ru, routing layer 1051f is Au, and stress buffer layer 1051e is Ti.
In one embodiment, the reflective layer 1052b of the expansion strip 1052 is Al, the barrier layer 1052d is Ni, the wire bonding layer 1051f is Au, and an unstressed buffer layer is between the barrier layer 1052d and the reflective layer 1052b of the expansion strip 1052, wherein the thickness of Ni is 600 nm.
In one embodiment, the reflective layer 1052b of the expansion strip 1052 is Al, the barrier layer 1052d is a combination of Ni layer and Cu layer, the wire bonding layer 1051f is Au, and there is no stress buffer layer between the barrier layer 1052d and the reflective layer 1052b of the expansion strip 1052, wherein the total thickness of the Ni layer and the Cu layer is 600 nm.
The following table shows the values of the thermal conductivity and resistivity parameters of several main metals mentioned in the present invention.
The above disclosure is only a preferred embodiment of the present invention, and certainly should not be taken as limiting the scope of the invention, which is defined by the claims and their equivalents.
Claims (11)
1. A semiconductor light emitting element comprising:
a first conductive type semiconductor layer, a second conductive type semiconductor layer, and a light emitting layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
the first electrode is formed on the first conductive semiconductor layer and comprises a routing electrode and an expansion strip, wherein the routing electrode comprises a reflecting layer, a blocking layer and a routing layer, the expansion strip comprises the reflecting layer and the blocking layer, the reflecting layer is used for reflecting light from the light emitting layer, the blocking layer is used for blocking diffusion of the reflecting layer, and the routing layer is used for external routing connection;
the method is characterized in that: the routing electrode comprises a stress buffer layer inserted into the barrier layer or between the reflecting layer and the barrier layer and used for buffering the stress of the barrier layer; the expansion bar stress-free buffer layer is inserted into the barrier layer or between the reflecting layer and the barrier layer.
2. The semiconductor light-emitting element according to claim 1, wherein: the barrier layers of the routing electrodes are multilayer, and the stress buffer layers of the routing electrodes are arranged between the adjacent barrier layers.
3. The semiconductor light-emitting element according to claim 1, wherein: the barrier layer of the routing electrode is a single layer, and the stress buffer layer of the routing electrode is arranged between the barrier layer and the reflecting layer.
4. The semiconductor light-emitting element according to claim 1, wherein: the routing electrode and the reflecting layer of the expansion strip are made of the same material, and the routing layer of the expansion strip is optionally provided with a routing layer.
5. The semiconductor light-emitting element according to claim 1, wherein: the stress buffer layer of the routing electrode comprises Ti.
6. The semiconductor light-emitting element according to claim 1, wherein: the barrier layers of the routing electrodes and the extension bars are made of the same or different materials.
7. The semiconductor light-emitting element according to claim 1, wherein: the heat conductivity coefficient of the barrier layer of the routing electrode is lower than that of the barrier layer of the expansion strip, or the resistivity of the barrier layer of the routing electrode is higher than that of the barrier layer of the expansion strip.
8. The semiconductor light-emitting element according to claim 7, wherein: the thermal conductivity coefficient of the barrier layer of the expansion strip is 30W/(m.k) -100W/(m.k) or higher than 100W/(m.k).
9. The semiconductor light-emitting element according to claim 7, wherein: the barrier layer of the expansion strip has a resistivity lower than 200n Ω.
10. The semiconductor light-emitting element according to claim 1, wherein: the barrier layer of the expansion strip comprises at least one of Ni and Pt.
11. The semiconductor light-emitting element according to claim 4, wherein: the routing electrodes and the reflecting layers of the expansion strips are made of Al, and the routing electrodes and the routing layers of the expansion strips are made of Au.
Priority Applications (1)
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113555481A (en) * | 2021-07-20 | 2021-10-26 | 厦门三安光电有限公司 | Light-emitting diode chip |
| CN115498088A (en) * | 2022-11-16 | 2022-12-20 | 镭昱光电科技(苏州)有限公司 | Miniature light-emitting diode and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113555481A (en) * | 2021-07-20 | 2021-10-26 | 厦门三安光电有限公司 | Light-emitting diode chip |
| CN113555481B (en) * | 2021-07-20 | 2023-01-17 | 厦门三安光电有限公司 | Light-emitting diode chip |
| CN115498088A (en) * | 2022-11-16 | 2022-12-20 | 镭昱光电科技(苏州)有限公司 | Miniature light-emitting diode and preparation method thereof |
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