CN211295073U - PIN radio frequency tube - Google Patents
PIN radio frequency tube Download PDFInfo
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- CN211295073U CN211295073U CN202020281827.5U CN202020281827U CN211295073U CN 211295073 U CN211295073 U CN 211295073U CN 202020281827 U CN202020281827 U CN 202020281827U CN 211295073 U CN211295073 U CN 211295073U
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Abstract
The utility model discloses a PIN radio frequency tube in the semiconductor power device technical field, include: the N-type heavily doped substrate comprises an N-type heavily doped substrate, wherein an epitaxial layer extends upwards from the middle of the N-type heavily doped substrate, a high-resistance intrinsic layer is arranged above the epitaxial layer, a P-type heavily doped layer is arranged above the high-resistance intrinsic layer, the epitaxial layer, the high-resistance intrinsic layer and the P-type heavily doped layer of the N-type heavily doped substrate jointly form a pillar, a glass passivation layer is arranged on the side surface of the pillar, a silicon nitride passivation layer is arranged on the top surface of the pillar, the silicon nitride passivation layer covers the upper surface of the pillar and the junction of the pillar and the first passivation layer, a back electrode metal layer is arranged on the back. The PIN radio frequency tube is convenient for routing and packaging, and is high in reliability.
Description
Technical Field
The utility model relates to a semiconductor power device technical field, in particular to PIN radio frequency tube.
Background
The prior frequency transmitting tubes have wide and irreplaceable functions in the communication field because the prior frequency transmitting tubes have the characteristics of extremely low forward conduction voltage drop and electric leakage and near ideal reverse recovery and are commonly used in signal transmitting equipment.
In order to enable the PIN radio frequency tube to have better maintenance performance and improve reliability, passivation treatment needs to be carried out on the PIN radio frequency tube so as to reduce reverse leakage current and improve breakdown voltage, and the common PIN radio frequency tube adopts glass as a passivation layer.
However, with the rapid development of mobile communication equipment, higher requirements are put on the reliability of the radio frequency tube and the reliability of the package. In the process of realizing the technical scheme, the inventor of the application finds that the glass passivation layer is thicker, so that the contact electrode on the front surface of the radio frequency tube is often obviously protruded or sunken, and the routing difficulty is higher during packaging.
SUMMERY OF THE UTILITY MODEL
The PIN radio frequency tube with the passivation layer made of silicon nitride or silicon dioxide or polycrystalline silicon at the top of the table column solves the defects of a glass passivation layer in the prior art, improves the flatness of a front contact electrode of a device, facilitates packaging, reduces the possibility of exposing corners of the top of the table column, reduces the processing difficulty and improves the reliability of the device.
The embodiment of the application provides a PIN radio frequency tube, includes:
the middle part of the N-type heavily doped substrate extends upwards to form an epitaxial layer;
the high-resistance intrinsic layer is arranged above the epitaxial layer of the N-type heavily doped substrate;
the P-type heavily doped layer is arranged above the high-resistance intrinsic layer;
the epitaxial layer, the high-resistance intrinsic layer and the P-type heavily doped layer of the N-type heavily doped substrate form a pillar together;
the first passivation layer surrounds and covers the side face of the pillar, and the first passivation layer adopts glass as a passivation material;
the second passivation layer is arranged above the P-type heavily doped layer and covers the junction of the pillar and the first passivation layer, a contact hole is formed in the second passivation layer, the second passivation layer is made of a heat-resistant, moisture-proof and smooth material and serves as a passivation material, and the second passivation layer is used for isolating the upper surface of the pillar from the electrical and chemical conditions of the surrounding environment;
the back electrode metal layer is arranged below the N-type heavily doped substrate;
and the front electrode metal layer is arranged above the second passivation layer and extends downwards to the upper surface of the P-type heavily doped layer along the contact hole.
The PIN radio frequency tube has the beneficial effects that: the three-layer cylindrical column composed of the epitaxial layer of the N-type heavily doped substrate, the high-resistance intrinsic layer and the P-type heavily doped layer is protected by a first passivation layer and a second passivation layer, the first passivation layer is passivated by glass, the side face of the column is protected by the excellent filling performance of the glass to guarantee the passivation effect, the second passivation layer is passivated by heat-resistant, moisture-proof and smooth materials to protect the top of the column, and therefore the flatness of the top face of the PIN radio frequency tube is improved on the basis of guaranteeing the performance of the PIN radio frequency tube, and the PIN radio frequency tube is easy to wire bond and package.
In one embodiment of the present application, the second passivation layer covers the upper surface of the first passivation layer at the same time. The beneficial effects of the embodiment are that: the upper surface of the device can be kept flat, and the device is easy to package.
In one embodiment of the present application, the second passivation layer uses silicon nitride as a passivation layer material. The beneficial effects of the embodiment are that: the front surface of a passivation layer formed by passivating the heat-resistant, moisture-proof and smooth silicon nitride material is smooth, and no protrusion larger than 5 microns exists, so that the PIN radio frequency tube is easy to wire bond and package; in addition, due to the fluidity of the molten glass, when the blade coating glass emulsion is adopted as a passivation layer, the corners of the top of the conventional radio frequency tube table column are easy to expose in the processing process, and the processing difficulty is higher; meanwhile, due to the fragility of glass, in the using process, a glass passivation layer at the corner of the top of the conventional PIN radio frequency tube stage is easy to be mechanically damaged to cause silicon exposure, and finally protection failure is caused.
In one embodiment of the present application, the second passivation layer uses silicon dioxide as a passivation layer material. The beneficial effects of the embodiment are that: the front surface of the silicon dioxide passivation layer is smooth, and the PIN radio frequency tube is easy to wire and package; the method for depositing the silicon dioxide passivation layer on the top of the table column can effectively solve the problem that the corner of the top of the table column is easy to expose in the glass latex scraping and coating process of the conventional radio frequency tube, and reduces the processing difficulty; silicon nitride or silicon dioxide is used as a passivation layer at the corner of the top of the pillar, so that the condition that silicon is exposed due to mechanical damage can be reduced, and the reliability of the device is improved.
In one embodiment of the present application, the second passivation layer uses polysilicon as a passivation layer material. The beneficial effects of the embodiment are that: the front surface of the polycrystalline silicon passivation layer is smooth, and the PIN radio frequency tube is easy to wire and package; the polycrystalline silicon at the corner of the top of the pillar is used as a passivation layer, so that the condition that silicon is exposed due to mechanical damage can be reduced, and the reliability of the device is improved.
One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:
1. the front surface of a passivation layer formed by passivating heat-resistant, moisture-proof and smooth silicon nitride or silicon dioxide or polysilicon material is relatively flat, so that the PIN radio frequency tube is easy to wire bond and package;
2. silicon nitride or silicon dioxide or polysilicon silicon is used as a passivation layer at the corner of the top of the pillar, so that the condition of silicon exposure caused by mechanical damage can be reduced, and the reliability of the device is improved;
3. the mode of arranging the silicon nitride or silicon dioxide passivation layer on the top of the table column can effectively solve the problem that the corner of the table column top is easy to expose when the conventional radio frequency tube is used for scraping and coating glass emulsion, and the processing difficulty is reduced.
Drawings
Fig. 1 is a schematic structural view of the present invention;
the semiconductor device comprises a substrate, a P-type heavily doped layer, a N-type heavily doped substrate, a high-resistance intrinsic layer, a P-type heavily doped layer, a first passivation layer, a second passivation layer, a back electrode metal layer and a front electrode metal layer, wherein the N-type heavily doped substrate is 1, the high-resistance intrinsic layer is 2, the P-type heavily doped layer is 3, the first passivation layer is 4, the.
Detailed Description
The present invention will be further explained with reference to the following embodiments, which are to be understood as illustrative only and not as limiting the scope of the invention, and modifications of the various equivalent forms of the present invention by those skilled in the art after reading the present invention fall within the scope of the appended claims.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "vertical" and "outer peripheral surface" are used to indicate the position or positional relationship based on the position or positional relationship shown in the drawings, or the position or positional relationship that the product of the present invention is usually placed when in use, and are only for convenience of description and simplification of the description, but do not indicate or imply that the device or element to be referred must have a specific position, be constructed in a specific orientation, and be operated, and therefore should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the description of the present invention, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the various embodiments or examples and features of the various embodiments or examples described herein can be combined and combined by those skilled in the art without conflicting aspects.
The PIN radio frequency tube with the passivation layer made of silicon nitride or silicon dioxide or polysilicon at the top of the table column solves the defects of a glass passivation layer in the prior art, improves the flatness of a front contact electrode of a device, facilitates packaging, reduces the possibility of exposing corners of the top of the table column, reduces the processing difficulty and improves the reliability of the device.
In order to solve the above problems, the technical solution in the embodiment of the present application has the following general idea:
the first embodiment is as follows:
as shown in fig. 1, a PIN rf tube includes:
the device comprises an N-type heavily doped substrate 1, wherein an epitaxial layer extends upwards from the middle of the N-type heavily doped substrate;
the high-resistance intrinsic layer 2 is arranged above the epitaxial layer of the N-type heavily-doped substrate;
the P-type heavily doped layer 3 is arranged above the high-resistance intrinsic layer;
the epitaxial layer, the high-resistance intrinsic layer and the P-type heavily doped layer of the N-type heavily doped substrate form a pillar together;
the first passivation layer 4 covers the side face of the pillar in a surrounding mode, and the first passivation layer adopts glass as a passivation material;
the second passivation layer 5 is arranged above the P-type heavily doped layer and covers the junction of the pillar and the first passivation layer and the upper surface of the first passivation layer, a contact hole is formed in the second passivation layer, the second passivation layer adopts silicon nitride or silicon dioxide or polycrystalline silicon as a passivation material, and the second passivation layer is used for isolating the upper surface of the pillar from the electrical and chemical conditions of the surrounding environment;
the back electrode metal layer 6 is arranged below the N-type heavily doped substrate;
and the front electrode metal layer 7 is arranged above the second passivation layer and extends downwards to the upper surface of the P-type heavily doped layer along the contact hole.
The technical scheme in the embodiment of the application at least has the following technical effects or advantages:
the three-layer cylindrical column composed of the epitaxial layer of the N-type heavily doped substrate, the high-resistance intrinsic layer and the P-type heavily doped layer is protected by a first passivation layer and a second passivation layer, the first passivation layer is passivated by glass, the side face of the column is protected by the excellent filling performance of the glass to guarantee the passivation effect, the second passivation layer is passivated by heat-resistant, moisture-proof and smooth materials to protect the top of the column, and no gap exists between the first passivation layer and the second passivation layer, so that the flatness of the top face of the PIN radio frequency tube is improved on the basis of guaranteeing the performance of the PIN radio frequency tube, and the PIN radio frequency tube is easy to wire bond and package. Meanwhile, the corners of the top surface and the side surfaces of the table column are better than the full-glass passivation effect of the common PIN radio frequency tube. Under severe environments, such as high temperature, high humidity and mechanical stress impact, the PIN radio frequency tube of the first embodiment can better maintain performance and has high reliability.
Example two: in the first embodiment, a method for preparing a PIN rf tube when a second passivation layer uses silicon nitride as a passivation material includes the following steps:
s1, selecting an N-type heavily doped silicon wafer as an N-type heavily doped substrate of the radio frequency tube, and growing a high-resistance intrinsic layer above an epitaxial layer on the N-type heavily doped substrate;
s2, pushing out the P-type heavily doped layer by liquid source coating diffusion annealing above the high-resistance intrinsic layer in the step S1;
s3, depositing a silicon nitride layer above the P-type heavily doped layer in the step S2 to protect the surface;
s4, photoetching and etching the upper side of the silicon nitride layer in the step S3 according to the required shape to obtain a pillar, and removing photoresist;
s5, removing the etching damage layer on the side wall of the stage column in the step S4 by wet etching;
s6, etching the residual silicon nitride layer above the stage in the step S5;
s7, coating glass on the side surface of the pillar in the step S6 by a blade coating method, removing glass powder on the top of the pillar by a rubber strip after each blade coating, and sintering to form a first passivation layer on the side surface;
s8, depositing a silicon nitride passivation layer on the top of the pillar as a second passivation layer in the step S7, wherein the specific thickness is determined by the required passivation effect;
s9, in the step S8, the front side of the silicon nitride passivation layer is etched by photoetching to form a front electrode contact hole;
s10, evaporating the front multilayer metal above the P-type heavily doped layer in the step S2 and the silicon nitride passivation layer in the step S8;
s11, forming a front electrode metal layer by the front multilayer metal in the photoetching step S10;
s12, the N-type heavily doped substrate back side is thinned and the back electrode metal layer is evaporated in step S1.
Although embodiments of the present invention have been shown and described, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art without departing from the scope of the present invention.
Claims (5)
1. A PIN rf tube, comprising:
the middle part of the N-type heavily doped substrate extends upwards to form an epitaxial layer;
the high-resistance intrinsic layer is arranged above the epitaxial layer of the N-type heavily doped substrate;
the P-type heavily doped layer is arranged above the high-resistance intrinsic layer;
the epitaxial layer, the high-resistance intrinsic layer and the P-type heavily doped layer of the N-type heavily doped substrate form a pillar together;
the first passivation layer surrounds and covers the side face of the pillar, and the first passivation layer adopts glass as a passivation material;
the second passivation layer is arranged above the P-type heavily doped layer and covers the junction of the pillar and the first passivation layer, a contact hole is formed in the second passivation layer, the second passivation layer is made of a heat-resistant, moisture-proof and smooth material and serves as a passivation material, and the second passivation layer is used for isolating the upper surface of the pillar from the electrical and chemical conditions of the surrounding environment;
the back electrode metal layer is arranged below the N-type heavily doped substrate;
and the front electrode metal layer is arranged above the second passivation layer and extends downwards to the upper surface of the P-type heavily doped layer along the contact hole.
2. The PIN radio frequency tube of claim 1, wherein: the second passivation layer covers the upper surface of the first passivation layer at the same time.
3. The PIN radio frequency tube of claim 2, wherein: and the second passivation layer adopts silicon nitride as a passivation layer material.
4. The PIN radio frequency tube of claim 2, wherein: and the second passivation layer adopts silicon dioxide as a passivation layer material.
5. The PIN radio frequency tube of claim 2, wherein: the second passivation layer adopts polycrystalline silicon as a passivation layer material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020281827.5U CN211295073U (en) | 2020-03-09 | 2020-03-09 | PIN radio frequency tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020281827.5U CN211295073U (en) | 2020-03-09 | 2020-03-09 | PIN radio frequency tube |
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| CN211295073U true CN211295073U (en) | 2020-08-18 |
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| CN202020281827.5U Active CN211295073U (en) | 2020-03-09 | 2020-03-09 | PIN radio frequency tube |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113990805A (en) * | 2021-10-27 | 2022-01-28 | 扬州国宇电子有限公司 | Preparation method of PIN radio frequency device |
| CN116845700A (en) * | 2023-05-26 | 2023-10-03 | 武汉敏芯半导体股份有限公司 | Composite passivation layer, manufacturing method thereof and photoelectric equipment |
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2020
- 2020-03-09 CN CN202020281827.5U patent/CN211295073U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113990805A (en) * | 2021-10-27 | 2022-01-28 | 扬州国宇电子有限公司 | Preparation method of PIN radio frequency device |
| CN116845700A (en) * | 2023-05-26 | 2023-10-03 | 武汉敏芯半导体股份有限公司 | Composite passivation layer, manufacturing method thereof and photoelectric equipment |
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