CN210986585U

CN210986585U - Withstand voltage enhanced aluminium base board power module

Info

Publication number: CN210986585U
Application number: CN201922025093.4U
Authority: CN
Inventors: 赵振涛
Original assignee: Individual
Current assignee: Individual
Priority date: 2019-11-21
Filing date: 2019-11-21
Publication date: 2020-07-10
Anticipated expiration: 2029-11-21

Abstract

The utility model discloses a withstand voltage enhanced aluminum substrate power module, which comprises an aluminum-based circuit board, wherein the aluminum-based circuit board consists of a circuit layer, an insulating layer and an aluminum-based layer, the aluminum-based layer is oxidized, and the surface is covered with an aluminum oxide thin film layer; the circuit also comprises an MOS tube, and the MOS tube is welded on the circuit layer of the aluminum-based circuit board. The bridge driving chip is correspondingly connected with the driving pin of the MOS tube or the IGBT. The voltage-resisting capacity of the aluminum substrate power module is improved by oxidizing the aluminum substrate of the aluminum substrate circuit board; the process is simple; and the aluminum base layer of the aluminum base circuit board is subjected to insulation treatment.

Description

Withstand voltage enhanced aluminium base board power module

Technical Field

The utility model relates to a power device module for power product or motor product.

Background

The standard aluminum-based circuit board has good heat dissipation performance, but the aluminum-based layer is exposed, so that the voltage impact resistance is not strong, the test standard cannot be passed in many voltage resistance tests, and insulation cannot be realized.

Power tubes are used in a large number of electronic products. MOS tube and IGBT are commonly used; the MOS transistor is also called as a field effect transistor; it has many uses, mainly used as switch component. The IGBT is another power tube, also called an insulated gate bipolar thyristor, and is mainly used as a switch component.

Tubes and IGBTs are used in a large number of electronic products such as variable frequency home appliances, power supplies, motor controls, and inverters. The MOS tube module is manufactured by adopting the aluminum-based circuit board, so that the heat dissipation effect is better; but have poor pressure resistance.

The half-bridge driving chip is designed for driving a high-power tube with a large current. Is a very mature technology; for example, the chip such as IR2103 manufactured by IR corporation in usa is the chip for driving MOS transistors and IGBTs.

Disclosure of Invention

To the above problem, the utility model aims at providing a power module of aluminium base board carries out oxidation treatment to the aluminium base layer of the aluminium base circuit board that adopts in the power module, makes aluminium base layer by the alumina parcel. Therefore, the voltage resistance of the module is improved and insulated.

In order to realize the technical purpose, the utility model discloses a scheme is: a pressure-resistant enhanced aluminum substrate power module comprises an aluminum-based circuit board, wherein the aluminum-based circuit board consists of a circuit layer, an insulating layer and an aluminum-based layer, the aluminum-based layer is subjected to oxidation treatment, and an aluminum oxide thin film layer covers the surface of the aluminum-based layer; the circuit also comprises an MOS tube, and the MOS tube is welded on the circuit layer of the aluminum-based circuit board.

For the oxidation of the aluminum base layer, anodic oxidation is adopted; is a common mature process. The anodic oxidation is a method of putting aluminum in a proper electrolyte, taking an aluminum product as an anode, and generating an oxide film on the surface of the aluminum product under the action of an applied current, and the method is called anodic oxidation. In the prior art, a thicker aluminum oxide layer can be formed by anodic oxidation and has an insulating function.

Preferably, the MOS transistor further comprises a half-bridge driving chip, and the half-bridge driving chip is correspondingly connected with the driving pin of the MOS transistor.

Preferably, in the above aluminum substrate power module with enhanced voltage resistance, the MOS transistor used in the module may also be an IGBT, and the IGBT is soldered on the circuit layer of the aluminum substrate circuit board.

The beneficial effects of this technical scheme are: the voltage resistance of the aluminum substrate power module can be increased; and insulation of the aluminum-based circuit board aluminum-based layer can be achieved. No special production process is needed.

Drawings

Fig. 1 is a schematic view of an embodiment of the present invention.

Fig. 2 is a schematic diagram of adding a half-bridge driving chip in the second embodiment of the present invention.

Fig. 3 is a reference circuit diagram according to an embodiment of the present invention.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.

As shown in fig. 1, the utility model discloses a: a pressure-resistant enhanced aluminum substrate power module comprises an aluminum substrate circuit board 1, wherein the aluminum substrate circuit board 1 consists of a circuit layer 11, an insulating layer 12 and an aluminum substrate layer 13, the aluminum substrate layer 13 is subjected to oxidation treatment, and the surface of the aluminum substrate layer is covered with an aluminum oxide thin film layer 131; the circuit also comprises an MOS tube 2, and the MOS tube 2 is welded on a circuit layer 11 of the aluminum-based circuit board.

As shown in fig. 2, a schematic diagram of a half-bridge driving chip is added in the second embodiment of the present invention. The circuit further comprises a half-bridge driving chip 3, the half-bridge driving chip 3 is welded on the circuit layer 11 of the aluminum-based circuit board 1, and an output pin of the half-bridge driving chip is connected with a corresponding driving pin of the MOS tube 2.

Fig. 3 is a circuit diagram of a second embodiment of the present invention.

The MOS tube or the IGBT of the utility model can adopt a wafer or a packaging sheet form; if a wafer is used, after the circuit connection is completed, the module is subjected to an encapsulation treatment.

The above discussion is based on aluminum-based circuit boards; the use of other metal substrates belongs to the same technical idea.

The above, only do the preferred embodiment of the present invention, not used to limit the present invention, all the technical matters of the present invention should be included in the protection scope of the present invention for any slight modification, equivalent replacement and improvement of the above embodiments.

Claims

1. The utility model provides an aluminium base board power module of withstand voltage reinforcing, includes aluminium base circuit board, its characterized in that: the aluminum-based circuit board consists of a circuit layer, an insulating layer and an aluminum-based layer, wherein the aluminum-based layer is subjected to oxidation treatment, and the surface of the aluminum-based layer is covered with an aluminum oxide thin film layer; the circuit also comprises an MOS tube, and the MOS tube is welded on the circuit layer of the aluminum-based circuit board.

2. The aluminum substrate power module with enhanced withstand voltage as recited in claim 1, wherein: the driving circuit further comprises a half-bridge driving chip, and the half-bridge driving chip is correspondingly connected with the driving pins of the MOS tubes.

3. The aluminum substrate power module with enhanced withstand voltage as recited in claim 1, wherein: the MOS tube can also adopt an IGBT, and the IGBT is welded on a circuit layer of the aluminum-based circuit board.