CN210956673U

CN210956673U - Power module and electronic equipment

Info

Publication number: CN210956673U
Application number: CN202020117568.2U
Authority: CN
Inventors: 曹俊; 敖利波; 史波; 肖婷; 曾丹; 江伟
Original assignee: Gree Electric Appliances Inc of Zhuhai; Zhuhai Zero Boundary Integrated Circuit Co Ltd
Current assignee: Gree Electric Appliances Inc of Zhuhai; Zhuhai Zero Boundary Integrated Circuit Co Ltd
Priority date: 2020-01-17
Filing date: 2020-01-17
Publication date: 2020-07-07
Anticipated expiration: 2030-01-17

Abstract

The utility model relates to the technical field of electronic circuits, and discloses a power module and electronic equipment, wherein the power module comprises a base body which is formed by splicing a plurality of plate bodies and has a three-dimensional structure, wherein the base body is provided with a plurality of surfaces, functional chips are arranged on the plate bodies corresponding to at least two surfaces, and the functional chips which correspond to each other and are positioned on different plate bodies are bonded through leads; the electronic equipment is provided with the power module. The base body is of a three-dimensional structure formed by splicing a plurality of plate bodies in the power module and the electronic equipment, the functional chips are arranged on the plate bodies corresponding to two faces of the base body at least, the functional chips in the power module are arranged on two faces of the base body of the three-dimensional structure, and compared with plane packaging of the functional chips, the functional chips with a larger area can be packaged under the same volume, and the current density of the power module is larger.

Description

Power module and electronic equipment

Technical Field

The utility model relates to an electronic circuit technical field, in particular to power module and electronic equipment.

Background

An intelligent Power module, i.e., ipm (intelligent Power module), is a Power driving product combining Power electronics and integrated circuit technology. In order to achieve higher current density and cost saving, the size and thickness of power modules are decreasing, but limited by the material properties of the chip, and the size and heat dissipation of the device have to be considered while pursuing high current density, for example: silicon, which is generally accepted in the semiconductor industry, has a substantially determined area corresponding to the current density of the device, and is very difficult to break through.

SUMMERY OF THE UTILITY MODEL

The utility model provides a power module and electronic equipment for improve power module's current density.

In order to achieve the above purpose, the utility model provides the following technical scheme:

a power module, comprising: the base body with the three-dimensional structure is formed by splicing a plurality of plate bodies, wherein the base body is provided with a plurality of faces, functional chips are arranged on the plate bodies corresponding to at least two faces, and the functional chips which correspond to each other and are positioned on different plate bodies are bonded through leads.

The utility model provides an among the power module, a spatial structure for a plurality of plate body concatenations form is served as the base member for setting up the function chip, and is equipped with the function chip on the plate body that two faces of at least base member correspond, sets up the function chip among the power module on two at least faces of spatial structure's base member, compares in the plane encapsulation of function chip, under the same volume, can encapsulate the function chip of bigger area, and power module's current density is bigger.

Furthermore, the utility model provides an among the power module, along with the increase of function chip setting area, heat radiating area is corresponding increase also for power module's radiating effect is better.

Optionally, the base is rectangular, and the plurality of plate bodies include a top plate, a bottom plate, and four side plates.

Optionally, the power module has a functional chip including:

the three first IGBT chips and the three first FRD chips are used for forming a three-phase full-bridge inverter circuit;

the three-phase full-bridge driving HVIC chip is used for driving the three-phase full-bridge inverter circuit;

the second IGBT chip, the second FRD chip and the IGBT grid electrode driving chip are used for forming a Boost-PFC circuit;

four diode chips for constituting a rectifier circuit.

Optionally, each phase of the three-phase full-bridge inverter circuit comprises a first IGBT chip and a first FRD chip, and two chips in one phase of the three-phase full-bridge inverter circuit are respectively arranged on three side plates of the substrate.

Optionally, the base body includes a middle plate connected in a space surrounded by the plate bodies and parallel to the top plate of the base body, and the three-phase full-bridge driving HVIC chip is arranged on the middle plate.

Optionally, the second IGBT chip, the second FRD chip, and the IGBT gate driving chip are all disposed on a fourth side plate of the base.

Optionally, four of the diode chips are all disposed on the top plate of the base.

Optionally, a bottom plate of the base is provided with holes through which pins of the power module penetrate, and the pins of the power module penetrate through the holes in the bottom plate and are connected with the holes in the bottom plate in a sealing manner.

Optionally, the inside of the base body is vacuum, or a filling body is arranged inside the base body, and the filling body blocks a gap inside the base body.

Optionally, each of the board bodies is a copper-clad ceramic substrate, and two adjacent board bodies are welded and connected.

The utility model also provides an electronic equipment, this electronic equipment are equipped with an arbitrary power module that provides among the above-mentioned technical scheme, can reach the technological effect that above-mentioned power module reaches at least: compared with the planar packaging of the functional chip, the planar packaging structure can package the functional chip with a larger area under the same volume, and the current density of the power module is larger; meanwhile, along with the increase of the setting area of the functional chip, the heat dissipation area is correspondingly increased, so that the heat dissipation effect of the power module is better.

Drawings

Fig. 1 is a schematic structural diagram of a power module according to an embodiment of the present invention (a part of a functional chip is not shown);

fig. 2 is a schematic circuit diagram of a power module according to an embodiment of the present invention;

fig. 3 is a schematic diagram of a side plate of a power module provided with a phase of a three-phase full-bridge inverter circuit according to an embodiment of the present invention;

fig. 4 is a schematic structural diagram of a top plate of a power module according to an embodiment of the present invention;

fig. 5 is a schematic diagram of a side plate of a power module provided with a Boost-PFC circuit according to an embodiment of the present invention;

fig. 6 is a schematic structural diagram of a power module middle plate according to an embodiment of the present invention.

Icon: 11-a top plate; 12-a base plate; 13-side plate; 14-a middle plate; 20-a functional chip; 30-three-phase full-bridge inverter circuit; a 40-Boost-PFC circuit; and 50-a rectifying circuit.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

As shown in fig. 1, the power module provided in this embodiment includes: the substrate is formed by splicing a plurality of plate bodies and has a three-dimensional structure, wherein the substrate is provided with a plurality of faces, functional chips 20 are arranged on the plate bodies corresponding to at least two faces, and the functional chips 20 which correspond to each other and are positioned on different plate bodies are bonded through leads. Wherein, the functional chips 20 corresponding to each other refer to two functional chips 20 that need to be electrically connected to each other; the two functional chips 20 corresponding to each other and located on the same board body may be electrically connected to each other by wire bonding or by a board body where the two functional chips are located.

In the power module provided by this embodiment, the substrate for setting the functional chip 20 is a three-dimensional structure formed by splicing a plurality of plate bodies, and the functional chip 20 is arranged on the plate bodies corresponding to at least two surfaces of the substrate, and the functional chip 20 in the power module is arranged on at least two surfaces of the substrate with the three-dimensional structure, so that the power module can package the functional chip 20 with a larger area under the same volume compared with the planar package of the functional chip 20, and the current density of the power module is larger.

In addition, in the power module provided by this embodiment, as the setting area of the functional chip 20 increases, the heat dissipation area also increases correspondingly, so that the heat dissipation effect of the power module is better.

In an optional technical solution, each board body provided with the functional chip 20 may be provided with one functional chip 20, or may be provided with a plurality of functional chips 20; each board body can be a copper-clad ceramic substrate (namely, a DBC copper-clad substrate), the functional chip 20 can be welded on the corresponding copper-clad ceramic substrate, and two adjacent board bodies can be welded and connected.

Each surface of the base body may correspond to one plate body, or may correspond to a plurality of plate bodies, and for convenience of description, each surface of the base body corresponds to one plate body in this embodiment as an example for description.

Specifically, when the three-dimensional substrate is arranged, the substrate may be a rectangular parallelepiped, and the plurality of plate bodies include a top plate 11, a bottom plate 12, and four side plates 13. Of course, in other embodiments, the substrate may be prism-shaped, pyramid-shaped, or prismoid-shaped, etc.

The base member is the cuboid form in this embodiment, and roof and four curb plates all can with the contact of outside radiator, not only can improve the temperature rise problem that power density rises and arouse, moreover, can make the processing preparation degree of difficulty of base member lower, the setting of function chip 20 on the base member more convenient.

In a specific technical solution, the functional chip 20 of the power module includes:

three first IGBT (Insulated Gate bipolar transistor) chips and three first FRD chips (fast recovery diode chips) for constituting the three-phase full-bridge inverter circuit 30;

a three-phase full-bridge driving HVIC chip (i.e., a high-voltage driving chip) for driving the three-phase full-bridge inverter circuit 30;

a second IGBT chip, a second FRD chip, and an IGBT gate driving chip for constituting the Boost-PFC circuit 40; the Boost-PFC circuit can be a Boost power factor correction converter;

four diode chips for constituting the rectifying circuit 50.

The power module provided by the embodiment integrates the three-phase full-bridge inverter circuit 30, the three-phase full-bridge driving HVIC chip, the Boost-PFC circuit 40 and the rectifying circuit 50, and the integration level is higher. In which, the electrical connection relationship between the functional chips 20 in the power module can refer to the prior art (as shown in fig. 2).

Each phase of three-phase full-bridge inverter circuit 30 all includes a first IGBT chip and a first FRD chip, when specifically setting up above-mentioned three-phase full-bridge inverter circuit 30, can set up two chips in three-phase full-bridge inverter circuit 30 one phase respectively on the three curb plate 13 of base member, for example: two chips in one phase of the three-phase full-bridge inverter circuit 30 are respectively arranged on the left side plate, the right side plate and the back plate.

The base body may include an intermediate plate 14 connected to a top plate 11 parallel to the base body in a space defined by the plate bodies, and when the three-phase full-bridge driving HVIC chip is specifically provided, the three-phase full-bridge driving HVIC chip may be provided on the intermediate plate 14.

Specifically, when the Boost-PFC circuit 40 is arranged, the second IGBT chip, the second FRD chip, and the IGBT gate driving chip may be all disposed on the fourth side plate 13 of the substrate.

Specifically, when the rectifier circuit 50 is provided, the four diode chips may be all provided on the top plate 11 of the base.

In an alternative solution, holes for the pins of the power module to pass through are formed in the bottom plate 12 of the base, and the pins of the power module pass through the holes in the bottom plate 12. In order to prevent dust, moisture, etc. from entering the inside of the base body and affecting the performance of the power module, it is preferred that the pins of the power module are sealingly connected with holes in the base plate 12, for example: and sealing by welding.

Further, the inside of the base body can be vacuum, or a filling body is arranged in the base body and used for plugging a gap in the base body, and specifically, the filling body can be silica gel.

The following describes a method for manufacturing a power module with a rectangular parallelepiped base body, specifically, the power module includes seven DBC copper-clad substrates, where three functional chips 20 are used for soldering to form a three-phase full-bridge inverter circuit 30, one functional chip 20 is used for soldering to form a three-phase full-bridge driver HVIC chip and lead-out pins, one functional chip 20 is used for soldering to form a rectifier circuit 50, one functional chip is used for soldering to form a Boost-PFC circuit 40, and one functional chip is a bottom plate 12 for pin penetration. The manufacturing method of the power module comprises the following steps:

step S1, etching each DBC copper-clad substrate according to a pre-designed circuit;

step S2, welding a corresponding functional chip 20 on the DBC copper-clad substrate, as shown in FIGS. 3-6;

step S3, welding copper pins at the corresponding extraction PAD on the DBC copper-clad substrate;

step S4, welding each DBC copper-clad substrate to form a rectangular base body; the bottom plate 12 is welded at last, and the final pin is led out through the bottom plate 12; holes are formed in the corresponding positions on the bottom plate 12, and pins at the positions of other DBC copper-clad substrates correspond to the positions of the holes in the bottom plate 12;

step S5, processing the holes of the bottom plate 12 and sealing the holes by welding; reserving at least one hole on the surface of the power module for step S6;

step S6, vacuumizing the cavity in the power module from the reserved hole or filling silica gel into the cavity in the power module and curing;

and step S7, processing the pins, cutting off redundant pins and the like.

The power module provided by the embodiment can be a high-integration intelligent power module for white household appliances such as a variable frequency air conditioner or industrial variable frequency products such as an industrial frequency converter.

This embodiment also provides an electronic device, and this electronic device is equipped with any one of the power modules provided in the above technical scheme, can reach the technical effect that above-mentioned power module reaches at least: compared with the planar packaging of the functional chip 20, the functional chip 20 with a larger area can be packaged under the same volume, and the current density of the power module is larger; meanwhile, as the setting area of the functional chip 20 is increased, the heat dissipation area is correspondingly increased, so that the heat dissipation effect of the power module is better.

It will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims and their equivalents, the present invention is also intended to include such modifications and variations.

Claims

1. A power module, comprising: the base body with the three-dimensional structure is formed by splicing a plurality of plate bodies, wherein the base body is provided with a plurality of faces, functional chips are arranged on the plate bodies corresponding to at least two faces, and the functional chips which correspond to each other and are positioned on different plate bodies are bonded through leads.

2. The power module of claim 1, wherein the base is rectangular parallelepiped, and the plurality of plate bodies include a top plate, a bottom plate, and four side plates.

3. The power module of claim 2, wherein the power module has a functional chip comprising:

four diode chips for constituting a rectifier circuit.

4. The power module of claim 3, wherein each phase of the three-phase full-bridge inverter circuit comprises a first IGBT chip and a first FRD chip, and two chips of one phase of the three-phase full-bridge inverter circuit are respectively arranged on three side plates of the substrate.

5. The power module of claim 3, wherein the base body comprises a middle plate connected in a space enclosed by the plate bodies and parallel to a top plate of the base body, and the three-phase full-bridge driving HVIC chip is arranged on the middle plate.

6. The power module of claim 4 wherein the second IGBT chip, the second FRD chip, and the IGBT gate drive chip are all disposed on a fourth side plate of the substrate.

7. The power module of claim 3, wherein four of said diode chips are each disposed on a top plate of said base.

8. The power module according to any one of claims 2-6, wherein the bottom plate of the base body is provided with holes for the pins of the power module to pass through, and the pins of the power module pass through the holes on the bottom plate and are connected with the holes on the bottom plate in a sealing manner.

9. The power module according to any one of claims 1-6, wherein the inside of the base body is vacuum or a filling body is arranged inside the base body, and the filling body blocks a gap inside the base body.

10. The power module according to any one of claims 1 to 6, wherein each of the board bodies is a copper-clad ceramic substrate, and the adjacent two board bodies are welded together.

11. An electronic device, characterized in that a power module according to any one of claims 1-10 is provided.