CN210945860U - Flat plate type side heater for polycrystalline ingot furnace - Google Patents
Flat plate type side heater for polycrystalline ingot furnace Download PDFInfo
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- CN210945860U CN210945860U CN201922066149.0U CN201922066149U CN210945860U CN 210945860 U CN210945860 U CN 210945860U CN 201922066149 U CN201922066149 U CN 201922066149U CN 210945860 U CN210945860 U CN 210945860U
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Abstract
The utility model discloses a flat plate type side heater for a polycrystalline ingot furnace, which comprises a first graphite heating plate, a second graphite heating plate, a third graphite heating plate and a fourth graphite heating plate; the first graphite heating plate, the second graphite heating plate, the third graphite heating plate and the fourth graphite heating plate are connected end to form a closed-loop square frame structure. The device adopts the straight plate structure to replace traditional camber beam structure, the problem of prior art because the difference of the direction of current that flows through makes the current flow through and produces "vortex" effect here is solved, the resistance grow, calorific capacity and straight flange department produce the difference, thereby disturb normal one-way vertically temperature gradient, polycrystal crystalline grain distributes disorderly, reduce the problem of silicon bulk quality, simple structure has, can effectual elimination and the weakening because the vortex produces "hot node" region, the greatly reduced is because the produced difference in temperature vector of calorific capacity inequality, make the more even single characteristics of temperature field.
Description
Technical Field
The utility model belongs to polycrystal ingot casting equipment field, concretely relates to flat lateral part heater for polycrystal ingot furnace.
Background
With the rapid development of ingot casting technology, higher-quality polycrystalline silicon ingots become the favorite of the current market. Meanwhile, due to the problem of 'thermal nodes', the traditional bent beam type graphite heater structure has regional temperature difference in the whole ingot casting process, particularly in the crystal growth stage, and specifically, the temperature of the wave crest and the wave trough is obviously different from that of the middle straight edge, so that the polycrystalline silicon ingot has directional temperature difference vectors of 'thermal nodes' in the whole crystal growth process (directional solidification process).
The heater of the heating device of the current polycrystal ingot furnace mainly comprises a bent beam type graphite heater, current passes through the heater, high current is conducted to generate heat to provide continuous heat supply for the silicon material melting and crystal growing process, however, the wave crest and the wave trough of the bent beam type heater generate a vortex effect when the current flows through the position due to the difference of the flowing current direction, the resistance is increased, the heat generation quantity and the straight edge generate difference, so that the temperature difference vector of the wave crest pointing to the straight edge exists in the whole crystal growing process (directional solidification process), the normal unidirectional vertical temperature gradient is disturbed, the polycrystalline crystal grains are distributed disorderly, and the quality of a silicon ingot is reduced. Therefore, it is necessary to design a new structure of side heater to replace the bent beam heater to improve the temperature difference.
Disclosure of Invention
The utility model aims to solve the technical problem that a flat lateral part heater for polycrystal ingot furnace is provided, the device adopts the straight plate formula structure to replace traditional camber beam structure, the difference of having solved prior art because the direction of current flow through makes the electric current produce "vortex" effect when here flowing through, the resistance grow, calorific capacity and straight flange department produce the difference, thereby disturb normal one-way vertically temperature gradient, polycrystal crystalline grain distributes disorderly, reduce the problem of silicon bulk quality, and has simple structure, can effectual elimination and the weakening because the vortex and the "hot node" that produces region, the greatly reduced is because the uneven produced difference in temperature vector of calorific capacity, make the more even single characteristics of temperature field.
In order to realize the above design, the utility model adopts the following technical scheme: a flat plate type side heater for a polycrystalline ingot furnace comprises a first graphite heating plate, a second graphite heating plate, a third graphite heating plate and a fourth graphite heating plate; the first graphite heating plate, the second graphite heating plate, the third graphite heating plate and the fourth graphite heating plate are connected end to form a closed-loop square frame structure.
The first graphite heating plate is of a flat plate rectangular structure.
Connecting plates are connected to two sides of the first graphite heating plate; the second graphite heating plate, the third graphite heating plate and the fourth graphite heating plate are the same as the first graphite heating plate in size and shape.
The connecting plate is of a flat rectangular structure, and two electrode holes are formed in the surface of the connecting plate.
The first graphite heating plate is connected with the second graphite heating plate through a connecting plate and is vertical to the second graphite heating plate; the second graphite heating plate is connected with the third graphite heating plate through a connecting plate and is vertical to the third graphite heating plate; the third graphite heating plate is connected with the fourth graphite heating plate through a connecting plate and is vertical to the fourth graphite heating plate; the fourth graphite hot plate is connected with the first graphite hot plate through a connecting plate and is vertical to the first graphite hot plate.
The resistance values of the first graphite heating plate, the second graphite heating plate, the third graphite heating plate and the fourth graphite heating plate are equal, and the value is 25M omega.
The resistance value of the connecting plate is 5M omega.
A flat plate type side heater for a polycrystalline ingot furnace comprises a first graphite heating plate, a second graphite heating plate, a third graphite heating plate and a fourth graphite heating plate; the first graphite heating plate, the second graphite heating plate, the third graphite heating plate and the fourth graphite heating plate are connected end to form a closed-loop square frame structure. The device adopts the straight plate type structure to replace the traditional bent beam type structure, has simple structure, can effectively eliminate and weaken the 'hot node' area generated due to the vortex, greatly reduces the temperature difference vector generated due to uneven heat productivity, and makes the temperature field more uniform and single.
In a preferred scheme, the first graphite heating plate is of a flat plate rectangular structure. Simple structure, during the use, through electrode hole switch on, the current direction evenly flows out through dull and stereotyped region, and whole in-process electric current size is unified basically with the direction, and the abnormal emergence of "hot node" is eliminated more evenly to the heating load for the silicon ingot is more even at crystal growth in-process temperature field, ensures the homogeneity of crystalline grain growth, promotes the silicon ingot quality.
In a preferred scheme, two sides of the first graphite heating plate are connected with connecting plates; the second graphite heating plate, the third graphite heating plate and the fourth graphite heating plate are the same as the first graphite heating plate in size and shape. Simple structure, during the use, four graphite hot plates connect into square frame structure, evenly encircle the ingot furnace and heat.
In the preferred scheme, the connecting plate is of a flat rectangular structure, and two electrode holes are formed in the surface of the connecting plate. Simple structure, during the use, the electrode hole is used for connecting external power source, and every graphite heater all has two connecting plates, is convenient for adjust the wiring position as required.
In a preferred scheme, the first graphite heating plate is connected with the second graphite heating plate through a connecting plate and is vertical to the second graphite heating plate; the second graphite heating plate is connected with the third graphite heating plate through a connecting plate and is vertical to the third graphite heating plate; the third graphite heating plate is connected with the fourth graphite heating plate through a connecting plate and is vertical to the fourth graphite heating plate; the fourth graphite hot plate is connected with the first graphite hot plate through a connecting plate and is vertical to the first graphite hot plate. Simple structure, during the use, four graphite hot plates connect into square frame structure, evenly encircle the ingot furnace and heat.
In the preferred scheme, the resistance values of the first graphite heating plate, the second graphite heating plate, the third graphite heating plate and the fourth graphite heating plate are equal, and the value is 25M omega. Simple structure, when in use, the resistance values are equal, and the heating is ensured to be even.
In a preferred embodiment, the resistance of the connection board is 5M Ω. Simple structure, during the use, the connecting plate resistance value increases than prior art, guarantees that too high temperature difference can not appear in the corner.
A flat plate type side heater for a polycrystalline ingot furnace comprises a first graphite heating plate, a second graphite heating plate, a third graphite heating plate and a fourth graphite heating plate; the first graphite heating plate, the second graphite heating plate, the third graphite heating plate and the fourth graphite heating plate are connected end to form a closed-loop square frame structure. The device adopts the straight plate structure to replace traditional camber beam structure, the problem of prior art because the difference of the direction of current that flows through makes the current flow through and produces "vortex" effect here is solved, the resistance grow, calorific capacity and straight flange department produce the difference, thereby disturb normal one-way vertically temperature gradient, polycrystal crystalline grain distributes disorderly, reduce the problem of silicon bulk quality, simple structure has, can effectual elimination and the weakening because the vortex produces "hot node" region, the greatly reduced is because the produced difference in temperature vector of calorific capacity inequality, make the more even single characteristics of temperature field.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a front view of a first graphite heating plate.
Fig. 3 is a schematic structural view of a conventional bent beam type heater according to the present invention.
The reference numbers in the figures are: first graphite hot plate 11, second graphite hot plate 12, third graphite hot plate 13, fourth graphite hot plate 14, connecting plate 2, electrode hole 21.
Detailed Description
As shown in fig. 1 to 3, a flat plate type side heater for a polycrystalline ingot furnace includes a first graphite heating plate 11, a second graphite heating plate 12, a third graphite heating plate 13, and a fourth graphite heating plate 14; first graphite hot plate 11, second graphite hot plate 12 third graphite hot plate 13 and fourth graphite hot plate 14 end to end connect into closed-loop square frame structure. The device adopts the straight plate type structure to replace the traditional bent beam type structure, has simple structure, can effectively eliminate and weaken the 'hot node' area generated due to the vortex, greatly reduces the temperature difference vector generated due to uneven heat productivity, and makes the temperature field more uniform and single.
In a preferred embodiment, the first graphite heating plate 11 has a flat rectangular structure. Simple structure, during the use, through electrode hole 21 switch on, the current direction evenly flows out through dull and stereotyped region, and whole in-process electric current size is unified basically with the direction, and the abnormal emergence of "hot node" is eliminated more evenly to the heating load for the silicon ingot is more even at crystal growth in-process temperature field, ensures the homogeneity of crystalline grain growth, promotes the silicon ingot quality.
In the preferred scheme, two sides of the first graphite heating plate 11 are connected with connecting plates 2; second graphite heating plate 12, third graphite heating plate 13 and fourth graphite heating plate 14 are the same in size and shape as first graphite heating plate 11. Simple structure, during the use, four graphite hot plates connect into square frame structure, evenly encircle the ingot furnace and heat.
In the preferred scheme, the connecting plate 2 is a flat rectangular structure, and two electrode holes 21 are formed in the surface of the connecting plate. Simple structure, during the use, electrode hole 21 is used for connecting external power source, and every graphite heater all has two connecting plates 2, is convenient for adjust the wiring position as required.
In the preferred scheme, the first graphite heating plate 11 is connected with the second graphite heating plate 12 through the connecting plate 2 and is vertical to each other; the second graphite heating plate 12 is connected with the third graphite heating plate 13 through the connecting plate 2 and is vertical to each other; the third graphite heating plate 13 is connected with the fourth graphite heating plate 14 through the connecting plate 2 and is vertical to each other; the fourth graphite heating plate 14 is connected to the first graphite heating plate 11 through the connection plate 2 and is perpendicular to each other. Simple structure, during the use, four graphite hot plates connect into square frame structure, evenly encircle the ingot furnace and heat.
In the preferred scheme, the resistance values of the first graphite heating plate 11, the second graphite heating plate 12, the third graphite heating plate 13 and the fourth graphite heating plate 14 are equal, and the value is 25M Ω. Simple structure, when in use, the resistance values are equal, and the heating is ensured to be even.
In a preferred embodiment, the resistance of the connection board 2 is 5M Ω. Simple structure, during the use, the resistance value of connecting plate 2 increases than prior art, guarantees that too high temperature difference can not appear in the corner.
When the flat-plate type side heater for the polycrystalline ingot furnace is installed and used, the first graphite heating plate 11, the second graphite heating plate 12, the third graphite heating plate 13 and the fourth graphite heating plate 14 are connected end to form a closed-loop square frame structure. The device adopts the straight plate type structure to replace the traditional bent beam type structure, has simple structure, can effectively eliminate and weaken the 'hot node' area generated due to the vortex, greatly reduces the temperature difference vector generated due to uneven heat productivity, and makes the temperature field more uniform and single.
During the use, first graphite hot plate 11 is dull and stereotyped rectangle structure, through electrode hole 21 switch on power, and the current direction evenly flows through dull and stereotyped region, and whole in-process electric current size is unified basically with the direction, and the unusual emergence of "hot node" is eliminated more evenly to the heating load for the silicon ingot is more even at crystal growth in-process temperature field, ensures the homogeneity of crystalline grain growth, promotes the silicon ingot quality.
When in use, the two sides of the first graphite heating plate 11 are connected with the connecting plates 2; second graphite hot plate 12, third graphite hot plate 13 and fourth graphite hot plate 14 are the same with 11 size shapes of first graphite hot plate, and four graphite hot plates connect into square frame structure, evenly encircle the ingot furnace and heat.
During the use, connecting plate 2 is flat plate rectangle structure, and two electrode holes 21 have been seted up on the surface, and electrode hole 21 is used for connecting external power source, and every graphite heater all has two connecting plates 2, is convenient for adjust the wiring position as required.
When in use, the first graphite heating plate 11 is connected with the second graphite heating plate 12 through the connecting plate 2 and is vertical to each other; the second graphite heating plate 12 is connected with the third graphite heating plate 13 through the connecting plate 2 and is vertical to each other; the third graphite heating plate 13 is connected with the fourth graphite heating plate 14 through the connecting plate 2 and is vertical to each other; fourth graphite hot plate 14 is connected and mutually perpendicular through connecting plate 2 and first graphite hot plate 11, and four graphite hot plates connect into square frame structure, evenly encircle the ingot furnace and heat.
During the use, the resistance value of first graphite hot plate 11, second graphite hot plate 12, third graphite hot plate 13 and fourth graphite hot plate 14 equals, and the value is 25M omega, and the resistance value is the same size, guarantees to heat evenly.
When the temperature-difference-free connecting plate is used, the resistance value of the connecting plate 2 is 5M omega, the resistance value of the connecting plate 2 is larger than that of the prior art, and the phenomenon that the temperature difference at the corner is too high is avoided.
The above embodiments are merely preferred technical solutions of the present invention, and should not be considered as limitations of the present invention, and the features in the embodiments and the examples in the present application may be arbitrarily combined with each other without conflict. The protection scope of the present invention shall be defined by the claims and the technical solutions described in the claims, including the technical features of the equivalent alternatives as the protection scope. Namely, equivalent alterations and modifications within the scope of the invention are also within the scope of the invention.
Claims (7)
1. A flat plate type side heater for a polycrystal ingot furnace is characterized in that: the heating device comprises a first graphite heating plate (11), a second graphite heating plate (12), a third graphite heating plate (13) and a fourth graphite heating plate (14); the first graphite heating plate (11), the second graphite heating plate (12), the third graphite heating plate (13) and the fourth graphite heating plate (14) are connected end to form a closed-loop square frame structure.
2. The flat plate type side heater for a polycrystal ingot furnace as claimed in claim 1, wherein: the first graphite heating plate (11) is of a flat plate rectangular structure.
3. The flat plate type side heater for a polycrystal ingot furnace as claimed in claim 1, wherein: two sides of the first graphite heating plate (11) are connected with connecting plates (2); the second graphite heating plate (12), the third graphite heating plate (13) and the fourth graphite heating plate (14) are the same as the first graphite heating plate (11) in size and shape.
4. The flat plate type side heater for a polycrystal ingot furnace as claimed in claim 3, wherein: the connecting plate (2) is of a flat rectangular structure, and two electrode holes (21) are formed in the surface of the connecting plate.
5. The flat plate type side heater for a polycrystal ingot furnace as claimed in claim 1, wherein: the first graphite heating plate (11) is connected with the second graphite heating plate (12) through a connecting plate (2) and is vertical to the second graphite heating plate; the second graphite heating plate (12) is connected with the third graphite heating plate (13) through a connecting plate (2) and is vertical to the third graphite heating plate; the third graphite heating plate (13) is connected with the fourth graphite heating plate (14) through a connecting plate (2) and is vertical to the fourth graphite heating plate; the fourth graphite heating plate (14) is connected with the first graphite heating plate (11) through a connecting plate (2) and is vertical to the first graphite heating plate.
6. The flat plate type side heater for a polycrystal ingot furnace as claimed in claim 1, wherein: the resistance values of the first graphite heating plate (11), the second graphite heating plate (12), the third graphite heating plate (13) and the fourth graphite heating plate (14) are equal, and the value is 25M omega.
7. The flat plate type side heater for a polycrystal ingot furnace as claimed in claim 3, wherein: the resistance value of the connecting plate (2) is 5M omega.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922066149.0U CN210945860U (en) | 2019-11-26 | 2019-11-26 | Flat plate type side heater for polycrystalline ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922066149.0U CN210945860U (en) | 2019-11-26 | 2019-11-26 | Flat plate type side heater for polycrystalline ingot furnace |
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| Publication Number | Publication Date |
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| CN210945860U true CN210945860U (en) | 2020-07-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201922066149.0U Active CN210945860U (en) | 2019-11-26 | 2019-11-26 | Flat plate type side heater for polycrystalline ingot furnace |
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| CN (1) | CN210945860U (en) |
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- 2019-11-26 CN CN201922066149.0U patent/CN210945860U/en active Active
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