CN210925990U - Semiconductor device with a plurality of transistors - Google Patents
Semiconductor device with a plurality of transistors Download PDFInfo
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- CN210925990U CN210925990U CN201922293224.7U CN201922293224U CN210925990U CN 210925990 U CN210925990 U CN 210925990U CN 201922293224 U CN201922293224 U CN 201922293224U CN 210925990 U CN210925990 U CN 210925990U
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Abstract
The utility model relates to a semiconductor jointing equipment technical field especially relates to a semiconductor device. The utility model provides a semiconductor device, semiconductor device including electrically conductive connecting piece and with the insulating heat-conducting piece that electrically conductive connecting piece connects. The insulating heat-conducting piece has higher heat conductivity and insulativity, so that heat dissipation can be better realized under the condition of ensuring non-conductivity in the use process, heat generated by devices such as connecting pieces and the like can be timely discharged, and the reliability of the semiconductor device is further enhanced.
Description
Technical Field
The utility model relates to a semiconductor jointing equipment technical field especially relates to a semiconductor device.
Background
In an air conditioning electric control system, the application of power devices, power electronic devices and the like is not available, and particularly, an inverter air conditioner is available. In the operation process of high-current high-power devices such as an IGBT (insulated gate bipolar transistor), a fast recovery FRD (fast recovery diode), a compressor variable frequency control IPM (intelligent power module) and a direct current fan control module of a silicon controlled rectifier, a rectifier bridge and a PFC (power factor correction) circuit, a large amount of heat can be generated by energy transfer and conversion, and for small electronic and semiconductor products, the internal space is narrow and limited, and the effect of natural convection heat dissipation is poor. With the rapid development of electronic technology in recent years, high-power devices and integrated circuits are more and more widely used. The power device (such as an IGBT power module) has wide development and application prospects. For the high-power device such as the IGBT, when the high-power device works normally, the high-power loss can generate a large amount of heat to cause self-heating, if the heat cannot be effectively dissipated, the heat generated by the switch device cannot be timely discharged, and the failure rate of the switch device is greatly increased along with the temperature rise. Research data show that: the reliability of the semiconductor component is reduced by 50% when the temperature of the semiconductor component is increased by 10 ℃. The temperature rise directly affects the thermal stress of the IGBT, and in severe cases, the switching device is burned due to the over-high temperature, which directly affects the lifetime and reliability of the device.
At present, because a semi-encapsulated component, such as an IGBT, a device heat dissipation structure aluminum back sheet of the component is communicated with a collector electrode, when the semi-encapsulated power device is used in an air conditioner, a tin film is adhered between a radiator and the component for heat dissipation, the tin film is very thin, the risk of abrasion is caused for a long time, once the tin film is incomplete, the back surface of the component can be directly contacted with the radiator, and accidents are easy to occur under high pressure.
SUMMERY OF THE UTILITY MODEL
The utility model provides a semiconductor device, semiconductor device can solve above-mentioned technical problem effectively.
The utility model provides a semiconductor device, semiconductor device including electrically conductive connecting piece and with the insulating heat-conducting piece that electrically conductive connecting piece connects.
In one embodiment, the insulating and heat conducting member is made of an insulating ceramic material.
In one embodiment, the insulating ceramic material is a high frequency insulating ceramic.
In one embodiment, the high-frequency insulating ceramic material is high alumina porcelain or steatite porcelain.
In one embodiment, the conductive connecting piece comprises a connecting sheet and a connecting pin arranged at one end of the connecting sheet, and the insulating heat-conducting piece is attached to one side of the connecting sheet.
In one embodiment, the connecting sheet is provided with a first connecting through hole, the insulating heat-conducting member is provided with a second connecting through hole corresponding to the first connecting through hole, the second connecting through hole has the same diameter as the first connecting through hole, and the second connecting through hole is concentric with the first connecting through hole.
In one embodiment, the conductive connector includes three of the connection pins.
In one embodiment, the conductive connecting member further includes an insulating encapsulating frame disposed on two side edges of the connecting sheet, and the insulating heat-conducting member side edges are connected to the insulating encapsulating frame.
In one embodiment, the two opposite sides of the insulating encapsulating frame are provided with accommodating grooves for connecting the insulating heat-conducting pieces; the insulating heat-conducting member is detachably connected to the accommodating groove.
In one embodiment, the side edges of the insulating and heat-conducting member are thermally fused to the insulating and encapsulating frame through a molding compound.
The utility model provides a pair of semiconductor device compares with prior art, possesses following beneficial effect at least:
the utility model provides a semiconductor device, semiconductor device including electrically conductive connecting piece and with the insulating heat-conducting piece that electrically conductive connecting piece connects. The insulating heat-conducting piece has higher heat conductivity and insulativity, so that heat dissipation can be better realized under the condition of ensuring non-conductivity in the use process, heat generated by devices such as connecting pieces and the like can be timely discharged, and the reliability of the semiconductor device is further enhanced.
Drawings
The present invention will be described in more detail hereinafter based on embodiments and with reference to the accompanying drawings.
Fig. 1 is a schematic view of an overall structure of a semiconductor device according to an embodiment of the present invention;
fig. 2 is a schematic view of a split structure of the conductive connecting member and the insulating heat-conducting member of the semiconductor device according to the embodiment of the present invention.
In the drawings, like parts are provided with like reference numerals. The figures are not drawn to scale.
Reference numerals:
10-a semiconductor device; 11-a conductive connection; 111-connecting pieces; 1111-a first connecting through hole; 113-connection pins; 115-insulating encapsulation border; 13-an insulating thermally conductive member; 131-a second connecting via; 15-plastic packaging material.
Detailed Description
The present invention will be further explained with reference to the accompanying drawings.
Referring to fig. 1 in combination with fig. 2, the semiconductor device 10 of the present invention includes a conductive connecting member 11 and an insulating heat conducting member 13 connected to the conductive connecting member 11.
The utility model provides a semiconductor device 10, semiconductor device 10 include electrically conductive connecting piece 11 and with the insulating heat-conducting piece 13 that electrically conductive connecting piece 11 is connected. Because the insulating heat-conducting piece 13 has higher heat conductivity and insulativity, the insulating heat-conducting piece 13 can be directly contacted with a radiator in the using process, the heat dissipation is better realized under the condition of ensuring the non-conductivity, the heat generated by devices such as connecting pieces and the like can be timely discharged, and the reliability of the semiconductor device 10 is further enhanced.
In one example, the insulating heat-conducting member 13 is made of an insulating ceramic material. The insulating heat-conducting piece 13 is made of insulating ceramic materials, and the insulating ceramic materials have high heat conductivity, excellent insulativity and pressure resistance, and low thermal expansion coefficient, gradually become a new substrate material in the heat dissipation field, and are in direct contact with a radiator in application, so that the insulating ceramic materials are insulating and are not easy to wear, the heat conductivity is better, the heat dissipation is more facilitated, and the reliability of the device can be effectively improved. It should be noted that, the specific material of the insulating and heat-conducting member 13 is not limited herein, and it should be understood that, in other specific embodiments, the insulating and heat-conducting member 13 may be made of other materials with good insulating property, heat conductivity and stability according to the needs of users.
Specifically, in one example, the insulating ceramic material is a high-frequency insulating ceramic. High frequency insulating ceramics, also known as device ceramics, are used in electronic equipment to mount, secure, protect components, as insulating supports for current carrying conductors, and as ceramics for various integrated circuit chips. The dielectric constant is small, the dielectric loss is low, the mechanical strength is high, and the dielectric strength, the insulation resistance, the thermal conductivity and the like are higher. It should be noted that the insulating ceramic material is not limited to the high-frequency insulating ceramic, and it is understood that in other embodiments, the insulating ceramic material may be configured as other ceramic materials with good insulating property, thermal conductivity and stability according to the user's requirement.
Specifically, in the present embodiment, the high-frequency insulating ceramic material is high-alumina porcelain or steatite porcelain.
In one example, the conductive connecting member 11 includes a connecting piece 111 and a connecting pin 113 disposed at one end of the connecting piece 111, and the insulating heat-conducting member 13 is attached to one side of the connecting piece 111. The conductive connector 11 includes a connecting sheet 111 and a connecting pin 113 disposed at one end of the connecting sheet 111, and in the using process, the connecting sheet 111 and the connecting pin 113 are respectively connected to two to-be-connected components, which needs to be described, a specific structural shape of the conductive connector 11 is not limited herein, and it can be understood that in other specific embodiments, the conductive connector 11 may be configured into other shapes according to specific requirements of a user.
In one example, the connection piece 111 is opened with a first connection hole 1111, the insulating heat-conducting member 13 is opened with a second connection through hole 131 corresponding to the first connection hole 1111, the second connection through hole 131 has the same diameter as the first connection through hole 1111, and the second connection through hole 131 is concentrically arranged with the first connection through hole 1111. The provision of the first and second connection through holes 1111 and 131 facilitates fastening of the connection screw during the connection process.
In one example, the conductive connector 11 includes three of the connection pins 113. It should be noted that, here, a specific number of the connection pins 113 is not limited, and it should be understood that, in other specific embodiments, the number of the connection pins 113 may also be set to be one, two, or four, etc. according to a requirement of a user.
In one example, the conductive connecting member 11 further includes an insulating encapsulating frame 115 disposed on both side edges of the connecting portion 111, and the insulating heat-conducting member 13 is connected to the insulating encapsulating frame 115 at side edges thereof. The side edge of the insulating heat conducting member 13 is connected to the insulating encapsulating frame 115, so that the insulating heat conducting member 13 can be conveniently arranged on the conventional semiconductor device 10 in an attaching and adding manner, a good heat conducting effect is further realized, the conventional semiconductor device 10 is improved, and the cost is saved.
In one example, the insulating encapsulating frame 115 has accommodating grooves (not shown) formed on opposite sides thereof for connecting the insulating heat-conducting members 13; the insulating heat-conducting member 13 is detachably attached to the accommodating groove. With insulating heat-conducting piece 13 detachably connect in the holding tank, can be convenient for the user according to the demand, under the condition that insulating heat-conducting piece 13 appears damaging, can follow holding tank roll-off insulating heat-conducting piece 13, and then the insulating heat-conducting piece 13 of renewal is installed and is gone, replaces the change of whole semiconductor device 10 through changing the damage part, practices thrift the cost effectively, resources are saved, environmental protection more.
Specifically, in the present embodiment, the insulating heat-conducting member 13 is in interference fit with the accommodating groove. With insulating heat-conducting piece 13 with the holding tank sets up to interference fit, can prevent effectively that insulating heat-conducting piece 13 from taking place to rock or squint in the holding tank, further improves insulating heat-conducting piece 13's connection stability.
In one example, the sides of the insulating thermal conductor member 13 are thermally fused to the insulating encapsulating frame 115 by the molding compound 15. The insulating heat-conducting member 13 can be stably connected to the insulating encapsulating frame 115, so that the insulating heat-conducting member 13 can be effectively prevented from shaking or shifting, and the connection stability of the insulating heat-conducting member 13 can be further improved.
Specifically, in the present embodiment, the width of the molding compound 15 is set to 1mm, and the thickness of the molding compound 15 is set to 1 mm. The width of the plastic package material 15 is set to be 1mm, the thickness of the plastic package material 15 is set to be 1mm, the connection stability can be effectively guaranteed, and materials are saved. It should be noted that, the specific width and thickness of the molding compound 15 are not limited herein, and it is understood that, in other specific embodiments, the user may set the width of the molding compound 15 to be 0.8mm, 1.2mm, or 1.3mm, etc., and may set the width of the molding compound 15 to be 0.8mm, 1.2mm, or 1.3mm, etc., according to the requirement.
While the invention has been described with reference to a preferred embodiment, various modifications may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention. In particular, the technical features mentioned in the embodiments can be combined in any way as long as there is no structural conflict. The present invention is not limited to the particular embodiments disclosed herein, but encompasses all technical solutions falling within the scope of the claims.
Claims (10)
1. A semiconductor device comprising an electrically conductive connecting member and an insulating heat conductive member connected to the electrically conductive connecting member.
2. The semiconductor device according to claim 1, wherein the insulating heat-conducting member is made of an insulating ceramic material.
3. The semiconductor device according to claim 2, wherein the insulating ceramic material is a high-frequency insulating ceramic.
4. The semiconductor device according to claim 3, wherein the high-frequency insulating ceramic material is a high-alumina porcelain or a steatite porcelain.
5. The semiconductor device according to any one of claims 1 to 4, wherein the conductive connecting member comprises a connecting sheet and a connecting pin disposed at one end of the connecting sheet, and the insulating heat-conducting member is disposed on one side of the connecting sheet in an attached manner.
6. The semiconductor device as claimed in claim 5, wherein the connecting pad has a first connecting through hole, the insulating heat-conducting member has a second connecting through hole corresponding to the first connecting through hole, the second connecting through hole has the same diameter as the first connecting through hole, and the second connecting through hole is concentric with the first connecting through hole.
7. The semiconductor device of claim 5, wherein the conductive connector comprises three of the connection pins.
8. The semiconductor device of claim 5, wherein the conductive connecting member further comprises an insulating encapsulating frame disposed at both side edges of the connecting tab, and wherein the insulating heat conducting member side edges are connected to the insulating encapsulating frame.
9. The semiconductor device as claimed in claim 8, wherein the insulating encapsulating frame has receiving grooves formed on opposite sides thereof for connecting the insulating heat-conducting member; the insulating heat-conducting member is detachably connected to the accommodating groove.
10. The semiconductor device of claim 8, wherein the sides of the insulative heat conducting member are thermally fused to the insulative encapsulating frame by a molding compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922293224.7U CN210925990U (en) | 2019-12-18 | 2019-12-18 | Semiconductor device with a plurality of transistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922293224.7U CN210925990U (en) | 2019-12-18 | 2019-12-18 | Semiconductor device with a plurality of transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210925990U true CN210925990U (en) | 2020-07-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922293224.7U Active CN210925990U (en) | 2019-12-18 | 2019-12-18 | Semiconductor device with a plurality of transistors |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210925990U (en) |
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2019
- 2019-12-18 CN CN201922293224.7U patent/CN210925990U/en active Active
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