CN210856406U - Single crystal furnace and bottom heater thereof - Google Patents
Single crystal furnace and bottom heater thereof Download PDFInfo
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- CN210856406U CN210856406U CN201922090887.9U CN201922090887U CN210856406U CN 210856406 U CN210856406 U CN 210856406U CN 201922090887 U CN201922090887 U CN 201922090887U CN 210856406 U CN210856406 U CN 210856406U
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Abstract
The application discloses a bottom heater of a single crystal furnace, which comprises a cylindrical side heating body and a cylindrical bottom heating body; the bottom of the side heating body is provided with electrode pins which extend inwards along the radial direction, and grooves are formed in the direction vertical to the electrode pins; the bottom heating body comprises an annular central heating unit and an auxiliary heating unit, the first end of the auxiliary heating unit is connected with the central heating unit, and the second end of the auxiliary heating unit is connected with the electrode pin. It can be seen that, bottom heater in this application includes lateral part heating member and bottom heating member, can heat stove bottom and side simultaneously, and heating area increases for the melting speed of silicon material in the crucible, improves the defect of current bottom heater at the concentrated heating of bottom simultaneously, improves the homogeneity to silicon material heating, avoids being in the silicon material on upper strata and falls fast and cause the damage to the crucible. In addition, the application also provides a single crystal furnace with the advantages.
Description
Technical Field
The application relates to the technical field of heater devices, in particular to a single crystal furnace and a bottom heater thereof.
Background
Czochralski (CZ) method is a common method for producing single crystal silicon by placing a polycrystalline silicon ingot in a quartz crucible of a single crystal furnace, melting the ingot by a main heater and a bottom heater of the single crystal furnace, immersing a seed crystal in the melt, and pulling the single crystal at an appropriate temperature.
At present, a bottom heater of a single crystal furnace is a single accessory, is generally shaped like a disc, and rotates around a central circle by using centrosymmetric annular strip-shaped graphite and finally reaches the position of an electrode. When the bottom heater supplies heat at the bottom of the furnace, the heat is transferred from the center of the bottom to the outer periphery, so that the silicon material block is completely melted. Because the bottom is heated in a centralized manner, the phenomenon of overheating of the bottom can occur, the silicon material close to the bottom can be melted firstly, and then the silicon material block close to the edge position falls to be melted continuously, the material melting time is prolonged in a layer-by-layer material melting mode, and the silicon material block at the edge position falls at an excessively high speed due to the fact that the bottom layer is in a liquid state, and the silicon material block slightly impacts the bottom of the crucible to cause crucible abrasion.
Therefore, how to solve the above technical problems should be a great concern to those skilled in the art.
SUMMERY OF THE UTILITY MODEL
The application aims to provide a single crystal furnace and a bottom heater thereof, so as to improve the heating uniformity, accelerate the speed of melting silicon materials and reduce the damage to a crucible.
In order to solve the technical problem, the application provides a bottom heater of a single crystal furnace, which comprises a cylindrical side heating body and a cylindrical bottom heating body;
the bottom of the side heating body is provided with electrode pins which extend inwards along the radial direction, and grooves are formed in the direction vertical to the electrode pins;
the bottom heating body comprises an annular central heating unit and an auxiliary heating unit, the first end of the auxiliary heating unit is connected with the central heating unit, and the second end of the auxiliary heating unit is connected with the electrode pin.
Optionally, the auxiliary heating unit is a serpentine heating unit.
Optionally, the number of the serpentine heating units is two.
Optionally, the electrode pin and the second end of the auxiliary heating unit are both provided with screw holes.
Optionally, the thickness of the region where the electrode pin is connected to the auxiliary heating unit is half of the thickness of the region where the electrode pin is not connected to the auxiliary heating unit, and the thickness of the region where the auxiliary heating unit is connected to the electrode pin is equal to the thickness of the region where the electrode pin is connected to the auxiliary heating unit.
Optionally, the side heating body and the bottom heating body are both graphite heating bodies or both carbon-carbon composite heating bodies.
The application also provides a single crystal furnace, which comprises any one of the bottom heaters.
The bottom heater of the single crystal furnace comprises a cylindrical side heating body and a cylindrical bottom heating body; the bottom of the side heating body is provided with electrode pins which extend inwards along the radial direction, and grooves are formed in the direction vertical to the electrode pins; the bottom heating body comprises an annular central heating unit and an auxiliary heating unit, the first end of the auxiliary heating unit is connected with the central heating unit, and the second end of the auxiliary heating unit is connected with the electrode pin. Therefore, the bottom heater in the application can heat the furnace bottom and the side surface simultaneously, the heating area is increased, the melting speed of silicon materials in the crucible is increased, the defect that the conventional bottom heater is used for heating in a centralized mode at the bottom is overcome, the uniformity of heating the silicon materials is improved, and the crucible is prevented from being damaged due to the fact that the silicon materials on the upper layer fall quickly. In addition, the application also provides a single crystal furnace with the advantages.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic structural view of a bottom heater of a single crystal furnace according to an embodiment of the present disclosure;
fig. 2 is a top view of a side heating body provided in an embodiment of the present application;
FIG. 3 is a cross-sectional view of a side heating body provided in an embodiment of the present application;
fig. 4 is a top view of a bottom heating body provided in an embodiment of the present application.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be implemented in other ways different from the specific details set forth herein, and one skilled in the art may similarly generalize the present invention without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background section, the bottom of the crucible is heated intensively by the existing bottom heater, the phenomenon of overheating of the bottom can occur, the silicon material close to the bottom can be melted firstly, then the silicon material block close to the edge position falls and is melted continuously, the material melting mode layer by layer prolongs the material melting time, and the silicon material block at the edge position slightly impacts the bottom of the crucible due to the fact that the bottom layer is in a liquid state, and the falling speed of the silicon material block at the edge position is too high, and the crucible is abraded.
In view of this, the present application provides a bottom heater of a single crystal furnace, please refer to fig. 1 to 3, fig. 1 is a schematic structural diagram of the bottom heater of the single crystal furnace according to an embodiment of the present application, fig. 2 is a top view of a side heating body according to the embodiment of the present application, fig. 3 is a cross-sectional view of the side heating body according to the embodiment of the present application, the bottom heater includes a cylindrical side heating body 1 and a cylindrical bottom heating body 2;
the bottom of the side heating body 1 is provided with an electrode pin 11 extending inwards along the radial direction, and a groove 12 is arranged in the direction vertical to the electrode pin;
the bottom heating body 2 comprises an annular central heating unit 21 and an auxiliary heating unit 22, a first end of the auxiliary heating unit 22 is connected with the central heating unit 21, and a second end of the auxiliary heating unit 22 is connected with the electrode pin 11.
It should be noted that the first end and the second end of the auxiliary heating unit 22 are respectively the head part and the tail part of the auxiliary heating unit 22.
Note that the width of the groove 12 of the side heating body 1 in the region opposite to the main heater electrode position is larger than the grooves 12 of the other regions to make a position for the main heater electrode, and the opening directions of the adjacent grooves 12 are opposite.
Optionally, in an embodiment of the present application, the auxiliary heating unit 22 is a serpentine heating unit, please refer to fig. 4, but the present application is not limited thereto specifically, and in other embodiments of the present application, the auxiliary heating unit 22 may also be a spoke heating unit.
Further, when the auxiliary heating unit 22 is a serpentine heating unit, the number of the serpentine heating units is two, and when the auxiliary heating unit 22 is a spoke heating unit, the number of the spoke heating units can be set by itself.
Note that, in the present embodiment, the material of the side heating body 1 and the bottom heating body 2 is not particularly limited, as the case may be. For example, the side heating body 1 and the bottom heating body 2 are both graphite heating bodies or both carbon-carbon composite heating bodies.
The bottom heater in this application includes lateral part heating member 1 and bottom heating member 2, wherein, the lateral part heater has along radial inwardly extending's electrode foot 11, and be provided with recess 12 on perpendicular electrode foot direction, bottom heating member 2 includes annular central heating unit 21 and auxiliary heating unit 22, auxiliary heating unit 22 respectively with electrode foot 11, central heating unit 21 links to each other, the bottom heater can heat stove bottom and side simultaneously, heating area increases, accelerate the melting speed of silicon material in the crucible, improve the defect that current bottom heater concentrates the heating in the bottom simultaneously, improve the homogeneity to silicon material heating, the quick whereabouts of silicon material of avoiding being in the upper strata causes the damage to the crucible.
Preferably, the second ends of the electrode pin 11 and the auxiliary heating unit 22 are both provided with screw holes, the electrode pin 11 and the auxiliary heating unit 22 are connected through screws, when any one of the side heating body 1 and the bottom heating body 2 is damaged, only the damaged part can be replaced, the cost of the bottom heater is reduced, and the service life is prolonged.
On the basis of the above embodiment, in an embodiment of the present application, the thickness of the region where the electrode pin 11 is connected to the auxiliary heating unit 22 is half of the thickness of the region where the electrode pin 11 is not connected to the auxiliary heating unit 22, and the thickness of the region where the auxiliary heating unit 22 is connected to the electrode pin 11 is equal to the thickness of the region where the electrode pin 11 is connected to the auxiliary heating unit 22, that is, the thickness of the stacked region after the electrode pin 11 is connected to the auxiliary unit is equal to the thickness of the region where the electrode pin 11 is not connected to the auxiliary heating unit 22, so that the stacked region is a flat surface, and the connection stability between the electrode pin 11 and the auxiliary unit is improved.
The application also provides a single crystal furnace, which comprises any one of the bottom heaters.
The bottom heater in the single crystal furnace of the embodiment comprises a side heating body 1 and a bottom heating body 2, wherein the side heating body is provided with an electrode pin extending inwards along the radial direction, a groove 12 is formed in the direction perpendicular to the electrode pin, the bottom heating body 2 comprises an annular central heating unit 21 and an auxiliary heating unit 22, the auxiliary heating unit 22 is respectively connected with the electrode pin and the central heating unit 21, the bottom heater can simultaneously heat the bottom and the side face of the furnace, the heating area is increased, the melting speed of silicon materials in the crucible is increased, the defect of the existing bottom heater in bottom centralized heating is improved, the uniformity of heating the silicon materials is improved, and the silicon materials on the upper layer are prevented from falling fast to cause damage to the crucible.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The single crystal furnace and the bottom heater thereof provided by the application are described in detail above. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.
Claims (7)
1. A bottom heater of a single crystal furnace is characterized by comprising a cylindrical side heating body and a cylindrical bottom heating body;
the bottom of the side heating body is provided with electrode pins which extend inwards along the radial direction, and grooves are formed in the direction vertical to the electrode pins;
the bottom heating body comprises an annular central heating unit and an auxiliary heating unit, the first end of the auxiliary heating unit is connected with the central heating unit, and the second end of the auxiliary heating unit is connected with the electrode pin.
2. The single crystal furnace bottom heater of claim 1, wherein the auxiliary heating unit is a serpentine heating unit.
3. The single crystal furnace bottom heater according to claim 2, wherein the number of the serpentine heating units is two.
4. The single crystal furnace bottom heater according to claim 1, wherein said electrode pin and said second end of said auxiliary heating unit are provided with screw holes.
5. The single crystal furnace bottom heater according to claim 4, wherein the thickness of the region where the electrode pin is connected to the auxiliary heating unit is one half of the thickness of the region where the electrode pin is not connected to the auxiliary heating unit, and the thickness of the region where the auxiliary heating unit is connected to the electrode pin is equal to the thickness of the region where the electrode pin is connected to the auxiliary heating unit.
6. A bottom heater of a single crystal furnace according to any one of claims 1 to 5, wherein the side heating body and the bottom heating body are both graphite heating bodies or both carbon-carbon composite heating bodies.
7. A single crystal furnace, characterized in that it comprises a bottom heater according to any one of claims 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922090887.9U CN210856406U (en) | 2019-11-28 | 2019-11-28 | Single crystal furnace and bottom heater thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922090887.9U CN210856406U (en) | 2019-11-28 | 2019-11-28 | Single crystal furnace and bottom heater thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210856406U true CN210856406U (en) | 2020-06-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922090887.9U Active CN210856406U (en) | 2019-11-28 | 2019-11-28 | Single crystal furnace and bottom heater thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210856406U (en) |
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2019
- 2019-11-28 CN CN201922090887.9U patent/CN210856406U/en active Active
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