CN210856406U - A single crystal furnace and its bottom heater - Google Patents

Abstract

The application discloses a bottom heater of a single crystal furnace, comprising a cylindrical side heating body and a bottom heating body; the bottom of the side heating body is provided with electrode feet extending radially inward, and is vertically A groove is provided in the direction of the electrode feet; the bottom heating body includes an annular central heating unit and an auxiliary heating unit, the first end of the auxiliary heating unit is connected to the central heating unit, and the auxiliary heating unit has a The second end is connected to the electrode pin. It can be seen that the bottom heater in this application includes a side heating body and a bottom heating body, which can heat the furnace bottom and the side at the same time, the heating area is increased, the melting speed of the silicon material in the crucible is accelerated, and the existing bottom heater is improved at the same time. The defect of concentrated heating at the bottom improves the uniformity of heating the silicon material and avoids the damage to the crucible caused by the rapid falling of the silicon material in the upper layer. In addition, the present application also provides a single crystal furnace with the above advantages.

Description

A single crystal furnace and its bottom heater

technical field

The present application relates to the technical field of heater devices, in particular to a single crystal furnace and a bottom heater thereof.

Background technique

The Czochralski method (CZ method) is a common method for producing single crystal silicon. The polycrystalline silicon block is placed in the quartz crucible of the single crystal furnace and melted under the action of the main heater and the bottom heater of the single crystal furnace. The seed crystal is then dipped into the melt, and the single crystal is drawn down at a suitable temperature.

At present, the bottom heater of the single crystal furnace is a single accessory, which is generally shaped as a disc, and is rotated around the center circle by a center-symmetric annular strip of graphite, and finally reaches the electrode position. When the bottom heater supplies heat at the bottom of the furnace, the heat is transferred from the center of the bottom to the outer periphery to completely melt the silicon block. Due to the concentrated heating of the bottom, the phenomenon of overheating at the bottom will occur, and the silicon material near the bottom will melt first, and then the silicon block near the edge will fall and continue to melt. And because the bottom layer is in liquid state, the falling speed of the silicon block at the edge is too fast, which will slightly hit the bottom of the crucible, causing the crucible to wear.

Therefore, how to solve the above technical problems should be the focus of those skilled in the art.

Utility model content

The purpose of the present application is to provide a single crystal furnace and a bottom heater thereof, so as to improve the heating uniformity, speed up the melting of silicon material, and reduce the damage to the crucible.

In order to solve the above technical problems, the present application provides a bottom heater of a single crystal furnace, which includes a cylindrical side heating body and a bottom heating body;

The bottom of the side heating body is provided with electrode feet extending radially inward, and grooves are arranged in the direction perpendicular to the electrode feet;

The bottom heating body includes an annular central heating unit and an auxiliary heating unit, the first end of the auxiliary heating unit is connected to the central heating unit, and the second end of the auxiliary heating unit is connected to the electrode feet.

Optionally, the auxiliary heating unit is a serpentine heating unit.

Optionally, the number of the serpentine heating units is two.

Optionally, both the electrode feet and the second end of the auxiliary heating unit are provided with screw holes.

Optionally, the thickness of the area where the electrode feet are connected to the auxiliary heating unit is half the thickness of the area not connected to the auxiliary heating unit, and the auxiliary heating unit is connected to the electrode feet. The thickness of the area is equal to the thickness of the area where the electrode feet are connected to the auxiliary heating unit.

Optionally, both the side heating body and the bottom heating body are graphite heating bodies or both are carbon-carbon composite heating bodies.

The present application also provides a single crystal furnace, wherein the single crystal furnace includes any one of the bottom heaters described above.

The bottom heater of the single crystal furnace provided by the present application includes a cylindrical side heating body and a bottom heating body; the bottom of the side heating body is provided with electrode feet extending radially inward, and is vertically The electrode feet are provided with grooves in the direction; the bottom heating body includes a ring-shaped central heating unit and an auxiliary heating unit, the first end of the auxiliary heating unit is connected to the central heating unit, and the second end of the auxiliary heating unit is connected to the central heating unit. The two ends are connected to the electrode pins. It can be seen that the bottom heater in the present application can heat the furnace bottom and the side at the same time, the heating area is increased, the melting speed of the silicon material in the crucible is accelerated, and the defect that the existing bottom heater is centrally heated at the bottom is improved. The uniformity of heating can avoid the damage to the crucible caused by the rapid falling of the silicon material in the upper layer. In addition, the present application also provides a single crystal furnace with the above advantages.

Description of drawings

In order to illustrate the technical solutions of the embodiments of the present application or the prior art more clearly, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only For some embodiments of the present application, for those of ordinary skill in the art, other drawings can also be obtained according to these drawings without any creative effort.

1 is a schematic structural diagram of a heater at the bottom of a single crystal furnace provided by an embodiment of the application;

2 is a top view of a side heating body provided by an embodiment of the present application;

3 is a cross-sectional view of a side heating body provided by an embodiment of the present application;

FIG. 4 is a top view of the bottom heating body provided by the embodiment of the present application.

Detailed ways

In order to make those skilled in the art better understand the solution of the present application, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

In the following description, many specific details are set forth in order to fully understand the present utility model, but the present utility model can also be implemented in other ways different from those described herein, and those skilled in the art can do so without departing from the connotation of the present utility model. Therefore, the present invention is not limited by the specific embodiments disclosed below.

As mentioned in the background art section, the existing bottom heater concentrates heating on the bottom of the crucible, and the bottom of the crucible will be overheated, and the silicon material near the bottom will melt first, and then the silicon material near the edge will fall and continue to melt. The method of layer-by-layer materialization prolongs the materialization time, and because the bottom layer is liquid, the falling speed of the silicon block at the edge position is too fast, which will slightly hit the bottom of the crucible, causing wear of the crucible.

In view of this, the present application provides a single crystal furnace bottom heater, please refer to FIGS. 1 to 3 , FIG. 1 is a schematic structural diagram of a single crystal furnace bottom heater provided by an embodiment of the application, and FIG. 2 is a The top view of the side heater provided by the embodiment of the application, FIG. 3 is a cross-sectional view of the side heater provided by the embodiment of the application, and the bottom heater includes a cylindrical side heater 1 and a bottom heater 2;

The bottom of the side heating body 1 is provided with electrode feet 11 extending radially inward, and a groove 12 is provided in the direction perpendicular to the electrode feet;

The bottom heating body 2 includes an annular central heating unit 21 and an auxiliary heating unit 22, the first end of the auxiliary heating unit 22 is connected to the central heating unit 21, and the second end of the auxiliary heating unit 22 is connected to the central heating unit 21. The electrode pins 11 are connected.

It should be noted that the first end and the second end of the auxiliary heating unit 22 are the head and the tail of the auxiliary heating unit 22 respectively.

It should be noted that the width of the groove 12 of the side heater 1 in the area opposite to the main heater electrode is larger than that of the groove 12 in other areas, so that the main heater electrode is vacated, and the opening direction of the adjacent groove 12 on the contrary.

Optionally, in an embodiment of the present application, the auxiliary heating unit 22 is a serpentine heating unit, please refer to FIG. 4 , but this application does not specifically limit this. In other embodiments of the present application, The auxiliary heating unit 22 may also be a spoke-shaped heating unit.

Further, when the auxiliary heating unit 22 is a serpentine heating unit, the number of the serpentine heating units is two, and when the auxiliary heating unit 22 is a spoke heating unit, the number of the spoke heating units can be set by yourself.

It should be noted that in this embodiment, the materials of the side heating body 1 and the bottom heating body 2 are not specifically limited, depending on the situation. For example, the side heating body 1 and the bottom heating body 2 are both graphite heating bodies or carbon-carbon composite heating bodies.

The bottom heater in this application includes a side heating body 1 and a bottom heating body 2, wherein the side heater has electrode feet 11 extending radially inward, and grooves 12 are provided in the direction perpendicular to the electrode feet, The bottom heating body 2 includes a ring-shaped central heating unit 21 and an auxiliary heating unit 22. The auxiliary heating unit 22 is respectively connected with the electrode feet 11 and the central heating unit 21. The bottom heater can simultaneously heat the furnace bottom and sides, increasing the heating area. , to speed up the melting speed of the silicon material in the crucible, and at the same time to improve the defect of the existing bottom heater in the bottom of the centralized heating, improve the uniformity of the heating of the silicon material, and avoid the damage to the crucible caused by the rapid falling of the silicon material in the upper layer.

Preferably, the second ends of the electrode feet 11 and the auxiliary heating unit 22 are provided with screw holes, and the electrode feet 11 and the auxiliary heating unit 22 are connected by screws. When the side heating body 1 and the bottom heating body are connected When any one of 2 is damaged, only the damaged part can be replaced, which reduces the cost of the bottom heater and prolongs the service life.

On the basis of the above embodiment, in an embodiment of the present application, the thickness of the area where the electrode pins 11 are connected to the auxiliary heating unit 22 is two times the thickness of the area not connected to the auxiliary heating unit 22 . The thickness of the area where the auxiliary heating unit 22 is connected to the electrode pin 11 is equal to the thickness of the area where the electrode pin 11 is connected to the auxiliary heating unit 22, that is, the electrode pin 11 is connected to the auxiliary unit and then stacked The thickness of the electrode pin 11 is equal to the thickness of the area where the electrode pin 11 is not connected with the auxiliary heating unit 22, which is a flat surface, which improves the connection stability of the electrode pin 11 and the auxiliary unit.

The present application also provides a single crystal furnace, wherein the single crystal furnace includes any one of the bottom heaters described above.

The bottom heater in the single crystal furnace of this embodiment includes a side heating body 1 and a bottom heating body 2, wherein the side heater has electrode feet extending radially inward, and is provided with a vertical direction of the electrode feet. The groove 12, the bottom heating body 2 includes a ring-shaped central heating unit 21 and an auxiliary heating unit 22, the auxiliary heating unit 22 is respectively connected with the electrode feet and the central heating unit 21, and the bottom heater can simultaneously heat the furnace bottom and sides, The heating area is increased, the melting speed of the silicon material in the crucible is accelerated, and the defect that the existing bottom heater is concentrated at the bottom is improved, the uniformity of heating the silicon material is improved, and the rapid falling of the silicon material in the upper layer causes damage to the crucible.

The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same or similar parts between the various embodiments may be referred to each other. As for the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant part can be referred to the description of the method.

The single crystal furnace and the bottom heater thereof provided by the present application have been introduced in detail above. Specific examples are used herein to illustrate the principles and implementations of the present application, and the descriptions of the above embodiments are only used to help understand the methods and core ideas of the present application. It should be pointed out that for those of ordinary skill in the art, without departing from the principles of the present application, several improvements and modifications can also be made to the present application, and these improvements and modifications also fall within the protection scope of the claims of the present application.

Claims (7)

1. A bottom heater of a single crystal furnace is characterized by comprising a cylindrical side heating body and a cylindrical bottom heating body;

the bottom of the side heating body is provided with electrode pins which extend inwards along the radial direction, and grooves are formed in the direction vertical to the electrode pins;

the bottom heating body comprises an annular central heating unit and an auxiliary heating unit, the first end of the auxiliary heating unit is connected with the central heating unit, and the second end of the auxiliary heating unit is connected with the electrode pin.

2. The single crystal furnace bottom heater of claim 1, wherein the auxiliary heating unit is a serpentine heating unit.

3. The single crystal furnace bottom heater according to claim 2, wherein the number of the serpentine heating units is two.

4. The single crystal furnace bottom heater according to claim 1, wherein said electrode pin and said second end of said auxiliary heating unit are provided with screw holes.

5. The single crystal furnace bottom heater according to claim 4, wherein the thickness of the region where the electrode pin is connected to the auxiliary heating unit is one half of the thickness of the region where the electrode pin is not connected to the auxiliary heating unit, and the thickness of the region where the auxiliary heating unit is connected to the electrode pin is equal to the thickness of the region where the electrode pin is connected to the auxiliary heating unit.

6. A bottom heater of a single crystal furnace according to any one of claims 1 to 5, wherein the side heating body and the bottom heating body are both graphite heating bodies or both carbon-carbon composite heating bodies.

7. A single crystal furnace, characterized in that it comprises a bottom heater according to any one of claims 1 to 6.

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