CN210837730U - Metal pad structure of power device - Google Patents
Metal pad structure of power device Download PDFInfo
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- CN210837730U CN210837730U CN201922344184.4U CN201922344184U CN210837730U CN 210837730 U CN210837730 U CN 210837730U CN 201922344184 U CN201922344184 U CN 201922344184U CN 210837730 U CN210837730 U CN 210837730U
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- layer
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- power device
- pad
- metal pad
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 95
- 239000002184 metal Substances 0.000 title claims abstract description 95
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 63
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 48
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000010936 titanium Substances 0.000 claims abstract description 34
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052709 silver Inorganic materials 0.000 claims abstract description 31
- 239000004332 silver Substances 0.000 claims abstract description 31
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 29
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 24
- 238000003475 lamination Methods 0.000 claims abstract description 11
- 230000005669 field effect Effects 0.000 claims description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 5
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 abstract description 11
- 238000005538 encapsulation Methods 0.000 abstract description 7
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 3
- 239000000460 chlorine Substances 0.000 description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 229910052801 chlorine Inorganic materials 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 238000004806 packaging method and process Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 1
- 238000012271 agricultural production Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
Abstract
The utility model provides a power device's metal pad structure, metal pad structure includes: the aluminum bonding pad is positioned on the surface of the power device; and the metal lamination layer covers the surface of the aluminum bonding pad, and the metal lamination layer comprises a titanium layer, a nickel layer and a silver layer which are sequentially laminated. The utility model discloses deposit metal stromatolite on aluminium pad, the metal stromatolite is including titanium layer, nickel layer and the silver layer that stacks gradually, thickness that can greatly increased metal pad to make can add greatly thickly at the encapsulation routing, guarantee the intensity of encapsulation routing. The utility model discloses can guarantee metal pad's electric conductivity and corrosion-resistant to improve the matching nature of the stress between aluminium pad and the silver layer, improve metal pad's stability.
Description
Technical Field
The utility model belongs to semiconductor design and manufacturing field especially relates to a metal pad structure of power device.
Background
Devices such as power VDMOS (vertical double-diffused metal oxide semiconductor field effect transistor) and power IGBT (insulated gate bipolar transistor) are in great demand in the power driving market, and are seen everywhere in people's daily life, industrial and agricultural production, national defense and aerospace technologies, but today with increasingly intense competition and more importance on production cost, power device manufacturers face great pressure for manufacturing high-performance devices and reducing production cost. Because the polycrystalline grid of the VDMOS and IGBT of the existing power device is wider, the grid area of the whole device is large, so that the grid charge (Qg) is large, and the high-frequency characteristic of the device is seriously influenced. This constraint is even more pronounced, especially for high current power devices. How to reduce the gate charge (Qg) and increase the switching frequency of the power device becomes a problem to be solved urgently in the manufacture of the power device. In addition, because the conventional power devices VDMOS and IGBT need to satisfy a certain current characteristic and a certain on-resistance, when a conventional gate width is adopted, the chip area needs to be made larger to satisfy the corresponding current characteristic. The power device adopting the discrete gate design can effectively reduce the gate area and reduce the gate charge, and has wide application prospect in the design of the power device.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a metal pad structure of a power device, which is used for solving the problems of the prior art that the metal pad of the power device has a smaller thickness and is easily corroded.
To achieve the above and other related objects, the present invention provides a metal pad structure of a power device, the metal pad structure including: the aluminum bonding pad is positioned on the surface of the power device; and the metal lamination layer covers the surface of the aluminum bonding pad, and the metal lamination layer comprises a titanium layer, a nickel layer and a silver layer which are sequentially laminated.
Optionally, the thickness of the titanium layer is between 1500 angstroms and 2500 angstroms, the thickness of the nickel layer is between 2500 angstroms and 3500 angstroms, and the thickness of the silver layer is between 10000 angstroms and 20000 angstroms.
Optionally, the metal stack is in the shape of a regular trapezoid.
Optionally, an edge region of the metal pad is covered with an insulating layer.
Optionally, the metal stack further covers the insulating layer.
Optionally, the thickness of the aluminum pad is between 4 microns and 5 microns.
Optionally, the aluminum pad has chlorine residue.
Optionally, the power device comprises a discrete gate field effect transistor.
Optionally, the back surface of the power device is further provided with a drain metal, and the drain metal includes a titanium layer, a nickel layer and a silver layer which are sequentially stacked.
As described above, the utility model discloses a power device's metal pad structure has following beneficial effect:
the metal bonding pad of the power device is mostly made of titanium/titanium nitride/aluminum (Ti/TiN/Al) laminated layers, the thickness of the aluminum layer is only 4-5 microns generally, the thicker the packaging routing is, the better the packaging routing is, and the thinner the aluminum bonding pad is, so that the packaging routing strength is influenced. The utility model discloses deposit metal stromatolite on aluminium pad, the metal stromatolite is including titanium layer, nickel layer and the silver layer that stacks gradually, thickness that can greatly increased metal pad to make can add greatly thickly at the encapsulation routing, guarantee the intensity of encapsulation routing.
Since metal etching is mainly carried out by chlorine (Cl), Cl inevitably remains in the polymer formed by the reaction. When the wafer is contacted with external water vapor, Al and Cl can generate a cyclic reaction all the time, so that the aluminum bonding pad is invalid, the difficulty of subsequent packaging is increased, and the product quality is influenced. To aqueous vapor contact problem in Al and the air, the utility model discloses at aluminium pad surface deposition one deck metallic silver (Ag), because metallic silver's activity is lower, hardly react with the aqueous vapor in normal environment, the utility model discloses can guarantee metallic pad's electric conductivity and corrosion-resistant simultaneously, the utility model discloses increase titanium layer and nickel layer between aluminium pad and silver layer, can improve the matching nature of the stress between aluminium pad and the silver layer greatly, improve metallic pad's stability.
Drawings
Fig. 1 is a schematic flow chart illustrating steps of a method for manufacturing a metal pad structure of a power device according to the present invention.
Fig. 2 to fig. 6 are schematic structural diagrams showing steps of the method for manufacturing a metal pad structure of a power device according to the present invention.
Description of the element reference numerals
101 power device
102 aluminum pad
103 insulating layer
104 negative photoresist
105 deposition window
106 titanium layer
107 nickel layer
108 silver layer
201 titanium layer
202 nickel layer
203 silver layer
S11-S14
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The present invention can also be implemented or applied through other different specific embodiments, and various details in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structure are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
In the context of this application, a structure described as having a first feature "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and only the components related to the present invention are shown in the drawings rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, amount and ratio of the components in actual implementation may be changed at will, and the layout of the components may be more complicated.
The metal bonding pad of the power device is mostly made of titanium/titanium nitride/aluminum (Ti/TiN/Al) laminated layers, the thickness of the aluminum layer is only 4-5 microns generally, the thicker the packaging routing is, the better the packaging routing is, and the thinner the aluminum bonding pad is, so that the packaging routing strength is influenced.
In addition, since metal etching is mainly carried out by chlorine (Cl), Cl inevitably remains in the polymer formed by the reaction. When the wafer is contacted with external water vapor, Al and Cl can generate a cyclic reaction all the time, so that the aluminum bonding pad is invalid, the difficulty of subsequent packaging is increased, and the product quality is influenced.
In view of the above problems, the present embodiment provides a method for manufacturing a metal pad structure of a power device, where the method includes:
as shown in fig. 1 and fig. 2, step 1) S11 is performed first, and a power device 101 is provided, where the power device 101 has an aluminum pad 102 on a surface thereof. For example, the power device 101 includes a split gate field effect transistor having two separate gates with an aluminum pad 102 on the gates, the aluminum pad 102 including a Ti/TiN/Al stack, and an insulating layer 103 between the two gates, the insulating layer 103 covering the edges of the aluminum pad 102, as shown in fig. 2. Since metal etching is required in the process of manufacturing the aluminum pad 102, and the metal etching is mainly performed by chlorine (Cl), the aluminum pad 102 has chlorine residue.
The aluminum bonding pad comprises a lamination layer consisting of a titanium layer, a titanium nitride layer and an aluminum layer.
In the present embodiment, the thickness of the aluminum pad 102 is between 4 microns and 5 microns.
As shown in fig. 1 to fig. 3, step 2) S12 is performed to form a negative photoresist 104 on the surface of the power device 101, and a deposition window 105 exposing the aluminum pad 102 is formed in the negative photoresist 104 by an exposure and development process.
For example, the negative photoresist 104 formed by the exposure and development process has an inverted trapezoid shape, and the deposition window 105 has a positive trapezoid shape. In this embodiment, the edge of the negative photoresist 104 is located on the insulating layer 103 at the edge of the aluminum pad 102, so that the deposition window 105 exposes a portion of the insulating layer 103.
As shown in fig. 1 and 4, step 3) S13 is performed to deposit a metal stack including a titanium layer 106, a nickel layer 107 and a silver layer 108 on the aluminum pad 102 and the negative photoresist 104.
For example, a metal stack may be deposited on the aluminum pads 102 and the negative photoresist 104 by evaporation. In this embodiment, before depositing the silver layer 108, the titanium layer 106 and the nickel layer 107 are deposited on the surface of the aluminum pad 102, which can greatly improve the stress matching between the aluminum pad 102 and the silver layer 108, increase the metal adhesion, avoid the cracking between the metals, and improve the stability of the metal pad.
In this embodiment, the thickness of the titanium layer 106 is between 1500 angstroms and 2500 angstroms, the thickness of the nickel layer 107 is between 2500 angstroms and 3500 angstroms, and the thickness of the silver layer 108 is between 10000 angstroms and 20000 angstroms. In one embodiment, the thickness of the titanium layer 106 is 2000 angstroms, the thickness of the nickel layer 107 is 3000 angstroms, and the thickness of the silver layer 108 is 15000 angstroms.
The top surface of metal stromatolite is higher than the top surface of insulating layer 103, just the metal stromatolite is insulating layer 103 of trapezoidal cover part, increases in the thickness of metal pad, metal pad has certain extension on horizontal, can effectively reduce the degree of difficulty of subsequent metal routing, increases the width of metal routing, increases the driving capability of electric current.
As shown in fig. 1 and 5, step 4) S14 is performed to remove the negative photoresist 104 layer and the metal stack on the negative photoresist 104 layer.
For example, the front surface of the power device 101 may be adhered to a film, the film is removed, the metal stack on the negative photoresist 104 layer is removed, the film is removed again, the negative photoresist 104 layer is removed, and finally, the residual negative photoresist 104 layer may be removed by using an acidic solution.
Of course, the negative photoresist 104 layer and the metal stack layer on the negative photoresist 104 layer may be directly removed by using an ashing process, a wet etching process, etc., without being limited to the examples listed herein.
As shown in fig. 6, finally, the method further includes thinning the back surface of the power device 101, and then forming a drain metal on the back surface of the power device 101, where the drain metal may be a titanium layer 201, a nickel layer 202, and a silver layer 203, which are stacked in sequence.
As shown in fig. 6, the present embodiment further provides a metal pad structure of a power device 101, where the metal pad structure includes: an aluminum pad 102 on the surface of the power device 101; and the metal lamination layer covers the surface of the aluminum bonding pad 102, and the metal lamination layer comprises a titanium layer 106, a nickel layer 107 and a silver layer 108 which are sequentially laminated.
For example, the power device 101 includes a split gate field effect transistor, as shown in fig. 6, the split gate field effect transistor has two separate gates, the gate has an aluminum pad 102 thereon, the aluminum pad 102 includes a Ti/TiN/Al stack, the aluminum pad 102 has a thickness of 4-5 microns, an insulating layer 103 is provided between the two gates, and the insulating layer 103 covers an edge of the aluminum pad 102. Since metal etching is required in the process of manufacturing the aluminum pad 102, and the metal etching is mainly performed by chlorine (Cl), the aluminum pad 102 has chlorine residue.
In this embodiment, before depositing the silver layer 108, the titanium layer 106 and the nickel layer 107 are deposited on the surface of the aluminum pad 102, which can greatly improve the stress matching between the aluminum pad 102 and the silver layer 108, increase the metal adhesion, avoid the cracking between the metals, and improve the stability of the metal pad.
The thickness of the titanium layer 106 is between 1500 angstroms and 2500 angstroms, the thickness of the nickel layer 107 is between 2500 angstroms and 3500 angstroms, and the thickness of the silver layer 108 is between 10000 angstroms and 20000 angstroms. In one embodiment, the thickness of the titanium layer 106 is 2000 angstroms, the thickness of the nickel layer 107 is 3000 angstroms, and the thickness of the silver layer 108 is 15000 angstroms.
As shown in fig. 6, the metal stack has a regular trapezoidal shape. The top surface of metal stromatolite is higher than the top surface of insulating layer 103, just the metal stromatolite is insulating layer 103 of trapezoidal cover part, increases in the thickness of metal pad, metal pad has certain extension on horizontal, can effectively reduce the degree of difficulty of subsequent metal routing, increases the width of metal routing, increases the driving capability of electric current.
As shown in fig. 6, a drain metal is further formed on the back surface of the power device 101, and the drain metal may be a titanium layer 201, a nickel layer 202, and a silver layer 203, which are sequentially stacked.
As described above, the utility model discloses a manufacturing method of metal pad structure of power device 101 has following beneficial effect:
the metal bonding pad of the power device 101 is mostly made of titanium/titanium nitride/aluminum (Ti/TiN/Al) laminate, the aluminum layer is generally only 4-5 microns thick, for the package of the power device 101, the thicker the package wire bonding is, the better the package wire bonding is, and the thinner the aluminum bonding pad 102 is, which affects the package wire bonding strength. The utility model discloses deposit metal stromatolite on aluminium pad 102, the metal stromatolite is including titanium layer 106, nickel layer 107 and the silver layer 108 that stacks gradually, thickness that can greatly increased metal pad to make can add greatly thickly at the encapsulation routing, guarantee the intensity of encapsulation routing.
Since metal etching is mainly carried out by chlorine (Cl), Cl inevitably remains in the polymer formed by the reaction. The wafer is when contacting with external aqueous vapor, and Al and Cl can take place the circulation reaction always, cause aluminium pad 102 to become invalid, increase the degree of difficulty to follow-up encapsulation, influence product quality, to aqueous vapor contact problem in Al and the air, the utility model discloses at aluminium pad 102 surface deposition one deck silver metal (Ag), because the activity of silver metal is lower, hardly react with the aqueous vapor in normal environment, the utility model discloses can guarantee metal pad's electric conductivity and corrosion-resistant simultaneously, the utility model discloses increase titanium layer 106 and nickel layer 107 between aluminium pad 102 and silver layer 108, can improve the matching nature of the stress between aluminium pad 102 and the silver layer 108 greatly, improve metal pad's stability.
Therefore, the utility model effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles and effects of the present invention, and are not to be construed as limiting the invention. Modifications and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which may be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A metal pad structure of a power device, the metal pad structure comprising:
the aluminum bonding pad is positioned on the surface of the power device;
the metal lamination layer covers the surface of the aluminum bonding pad and comprises a titanium layer, a nickel layer and a silver layer which are sequentially laminated.
2. The metal pad structure of the power device of claim 1, wherein: the thickness of the titanium layer is 1500-2500 angstroms, the thickness of the nickel layer is 2500-3500 angstroms, and the thickness of the silver layer is 10000-20000 angstroms.
3. The metal pad structure of the power device of claim 1, wherein: the metal lamination is in a regular trapezoid shape.
4. The metal pad structure of the power device of claim 1, wherein: and the edge area of the metal pad is covered with an insulating layer.
5. The metal pad structure of the power device of claim 4, wherein: the metal lamination layer also covers the insulating layer.
6. The metal pad structure of the power device of claim 1, wherein: the aluminum bonding pad comprises a lamination layer consisting of a titanium layer, a titanium nitride layer and an aluminum layer.
7. The metal pad structure of the power device of claim 1, wherein: the thickness of the aluminum pad is between 4 and 5 microns.
8. The metal pad structure of the power device of claim 1, wherein: the aluminum pad has chlorine residue.
9. The metal pad structure of the power device of claim 1, wherein: the power device includes a discrete gate field effect transistor.
10. The metal pad structure of the power device of claim 1, wherein: the back surface of the power device is also provided with drain metal, and the drain metal comprises a titanium layer, a nickel layer and a silver layer which are sequentially stacked.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922344184.4U CN210837730U (en) | 2019-12-20 | 2019-12-20 | Metal pad structure of power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922344184.4U CN210837730U (en) | 2019-12-20 | 2019-12-20 | Metal pad structure of power device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210837730U true CN210837730U (en) | 2020-06-23 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922344184.4U Active CN210837730U (en) | 2019-12-20 | 2019-12-20 | Metal pad structure of power device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210837730U (en) |
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2019
- 2019-12-20 CN CN201922344184.4U patent/CN210837730U/en active Active
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211111 Address after: 201822 room j2620, building 1, No. 2222, Huancheng Road, Juyuan new area, Jiading District, Shanghai Patentee after: Shanghai Gongcheng Semiconductor Technology Co.,Ltd. Address before: 201800 Building 1, No. 235, Chengbei Road, Jiading District, Shanghai Patentee before: Shanghai Industrial UTechnology Research Institute Patentee before: Shanghai Gongcheng Semiconductor Technology Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Metal pad structure of power devices Effective date of registration: 20231228 Granted publication date: 20200623 Pledgee: Wuding Road Sub branch of Bank of Shanghai Co.,Ltd. Pledgor: Shanghai Gongcheng Semiconductor Technology Co.,Ltd. Registration number: Y2023980075345 |
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