CN109616564A - A kind of flip LED chips and preparation method thereof - Google Patents
A kind of flip LED chips and preparation method thereof Download PDFInfo
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- CN109616564A CN109616564A CN201811256109.6A CN201811256109A CN109616564A CN 109616564 A CN109616564 A CN 109616564A CN 201811256109 A CN201811256109 A CN 201811256109A CN 109616564 A CN109616564 A CN 109616564A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of flip LED chips and preparation method thereof, belong to technical field of semiconductors.The flip LED chips include substrate, n type semiconductor layer, active layer, p type semiconductor layer, reflective layer, insulating layer, P-type electrode, N-type electrode, N-type pad and p-type pad；The upper surface of the insulating layer is generally aligned in the same plane with the upper surface of the N-type pad and the upper surface of the p-type pad.The present invention is by setting the upper surface of insulating layer to the upper surface of N-type pad and the upper surface of p-type pad in the same plane, tin cream can be improved to directly extrude when being bonded pad and bracket to the situation between two pads, the probability for reducing N-type pad and the conducting of p-type pad, improves the reliability of flip-chip.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of flip LED chips and preparation method thereof.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is that one kind can be converted to electric energy
The semiconductor diode of luminous energy.As a kind of novel light-emitting device, LED technology is quickly grown, application field is extensive, industry drives
Property it is strong, energy-saving potential is big, meet the requirement of low-carbon ecological economy and the development trend of contemporary new industry.It is illuminated with conventional electrical
It compares, LED illumination has many advantages, such as energy-saving and environmental protection, longevity and efficient, is known as most promising illumination by various countries and produces
Industry.
Chip is the core component of LED, is divided into positive assembling structure, inverted structure and three kinds of vertical structure.With traditional formal dress
Chip is compared, and flip-chip has many advantages, such as high current, reliably and using simplicity, has obtained large-scale application at present.
Existing flip-chip includes substrate, n type semiconductor layer, active layer, p type semiconductor layer, reflective layer, insulating layer, P
Type electrode, N-type electrode, N-type pad and p-type pad.N type semiconductor layer, active layer and p type semiconductor layer are sequentially laminated on substrate
On, p type semiconductor layer is equipped with the groove for extending to n type semiconductor layer.Reflective layer is laid on p type semiconductor layer, and reflective
Layer is equipped with the through-hole for extending to p type semiconductor layer.P-type electrode is arranged on reflective layer, and extends to p-type by through-hole and partly lead
Body layer；N-type electrode is arranged on the n type semiconductor layer in groove.Insulating layer be laid in groove except N-type electrode region it
On region on outer region and reflective layer in addition to P-type electrode region.P-type pad is arranged in P-type electrode and P
On the insulating layer of type surrounding them, N-type pad is arranged on the insulating layer around N-type electrode and N-type electrode.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Flip-chip will use tin cream for two pads of N-type pad and p-type pad and be bonded in bracket in encapsulation process
Specified region allows current to enough pins by bracket and injects flip-chip.Since tin cream has certain mobility,
Tin cream is easy to be expressed between two pads when being bonded pad and bracket, and N-type pad and p-type pad is caused to be connected.
Summary of the invention
The embodiment of the invention provides a kind of flip LED chips and preparation method thereof, are able to solve prior art N-type pad
The problem of with the conducting of p-type pad.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of flip LED chips, the flip LED chips include substrate, N-type
Semiconductor layer, active layer, p type semiconductor layer, reflective layer, insulating layer, P-type electrode, N-type electrode, N-type pad and p-type pad；Institute
It states n type semiconductor layer, the active layer and the p type semiconductor layer to stack gradually over the substrate, the p type semiconductor layer
It is equipped with the groove for extending to the n type semiconductor layer；On the n type semiconductor layer of the N-type electrode setting in the groove,
The P-type electrode is arranged on the p type semiconductor layer, and the reflective layer removes the P-type electrode institute in the p type semiconductor layer
On the region except region；The insulating layer is laid in the groove and on the reflective layer, and the insulating layer is equipped with
It extends to the first through hole of the P-type electrode and extends to the second through-hole of the N-type electrode；The N-type pad and the p-type
Pad is arranged at intervals on the insulating layer, and the p-type pad extends to the P-type electrode, the N by the first through hole
Type pad extends to the N-type electrode by second through-hole；
The upper surface of the insulating layer is located at same with the upper surface of the N-type pad and the upper surface of the p-type pad
Plane.
Optionally, the upper surface of the insulating layer includes lug boss and recessed portion, and the lug boss is relative to the recess
The height in portion is less than the thickness of the insulating layer, and the upper surface and the p-type of the top surface of the lug boss and the N-type pad are welded
The upper surface of disk is generally aligned in the same plane；The lug boss and the recess are equipped between the N-type pad and the p-type pad
Portion, between at least one of lug boss and recessed portion between the N-type pad and the p-type pad and the N-type pad
Distance the distance between be not equal to described N-type pad.
Protrusion in a kind of possible implementation of the embodiment of the present invention, between the N-type pad and the p-type pad
Portion includes the first lug boss and the second lug boss, and the distance between first lug boss and the N-type pad are less than described the
The distance between one lug boss and the p-type pad, the distance between second lug boss and the N-type pad are greater than described
The distance between second lug boss and the p-type pad；Recessed portion between the N-type pad and the p-type pad is located at institute
It states between N-type pad and first lug boss, between first lug boss and second lug boss and described second
Between lug boss and the p-type pad.
Optionally, the distance between first lug boss and the N-type pad are 10 μm~50 μm；Second protrusion
The distance between portion and the p-type pad are 10 μm~50 μm.
Optionally, the width of first lug boss is 5 μm~50 μm；The width of second lug boss is 5 μm~50 μ
m。
It is recessed between the N-type pad and the p-type pad in the alternatively possible implementation of the embodiment of the present invention
Concave portion includes the first recessed portion and the second recessed portion, and the distance between first recessed portion and the N-type pad are less than described
The distance between first recessed portion and the p-type pad, the distance between second recessed portion and the N-type pad are greater than institute
State the distance between the second recessed portion and the p-type pad；Lug boss between the N-type pad and the p-type pad is located at
Between first recessed portion and second recessed portion.
Optionally, the lug boss between the N-type pad and the p-type pad is also located at the N-type pad and described the
Between one recessed portion and between second recessed portion and the p-type pad.
In the embodiment of the present invention in another possible implementation, side of the N-type pad far from the p-type pad
Equipped with the lug boss and the recessed portion, the N-type pad is located at institute far from the recessed portion that the side of the p-type pad is arranged
It states between the lug boss and the N-type pad that N-type pad is arranged far from the side of the p-type pad；The p-type pad is far from institute
The side for stating N-type pad is equipped with the lug boss and the recessed portion, and the p-type pad is set far from the side of the N-type pad
The recessed portion set is located between lug boss and the p-type pad that the p-type pad is arranged far from the side of the N-type pad.
Optionally, the thickness that the N-type pad on the insulating layer is arranged in is equal to the lug boss relative to the recess
The height in portion, the thickness that the p-type pad on the insulating layer is arranged in are equal to height of the lug boss relative to the recessed portion
Degree.
On the other hand, the embodiment of the invention provides a kind of production method of flip LED chips, the production method packets
It includes:
N type semiconductor layer, active layer and p type semiconductor layer are successively grown on substrate；
The groove for extending to the n type semiconductor layer is opened up on the p type semiconductor layer；
Reflective layer is formed on the p type semiconductor layer；
N-type electrode is set on n type semiconductor layer in the groove, and in the p type semiconductor layer except described reflective
P-type electrode is set on region except layer region；
In the groove with form insulating layer on the reflective layer, the insulating layer, which is equipped with, extends to the p-type electricity
The first through hole of pole, the second through-hole for extending to the N-type electrode；
Interval setting N-type pad and p-type pad, the p-type pad are prolonged by the first through hole on the insulating layer
Extend to the P-type electrode, the N-type pad extends to the N-type electrode by second through-hole, the N-type pad it is upper
Surface, the upper surface of the p-type pad and the upper surface of the insulating layer are located at same surface.
Technical solution provided in an embodiment of the present invention has the benefit that
By setting the upper surface of insulating layer to the upper surface of N-type pad and the upper surface of p-type pad same flat
On face, tin cream can be improved and be bonded pad and when bracket directly extrudes to the situation between two pads, reduce N-type pad and
The probability of p-type pad conducting, improves the reliability of flip-chip.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of flip LED chips provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of another flip LED chips provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram of another flip LED chips provided in an embodiment of the present invention；
Fig. 4 is a kind of flow chart of the production method of flip LED chips provided in an embodiment of the present invention；
Fig. 5 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 201
Structure schematic diagram；
Fig. 6 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after performing step 202
Structure schematic diagram；
Fig. 7 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 203
Structure schematic diagram；
Fig. 8 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after performing step 204
Structure schematic diagram；
Fig. 9 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 205
Structure schematic diagram；
Figure 10 is the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 206
Structural schematic diagram.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of flip LED chips.Fig. 1 is a kind of flip LED provided in an embodiment of the present invention
The structural schematic diagram of chip.Referring to Fig. 1, which includes substrate 10, n type semiconductor layer 21, active layer 22, p-type half
Conductor layer 23, reflective layer 30, insulating layer 40, P-type electrode 51, N-type electrode 52, N-type pad 53 and p-type pad 54.N-type semiconductor
Layer 21, active layer 22 and p type semiconductor layer 23 are sequentially laminated on substrate 10, and p type semiconductor layer 23, which is equipped with, extends to N-type half
The groove 100 of conductor layer 21.N-type electrode 52 is arranged on the n type semiconductor layer 21 in groove 100, and P-type electrode 51 is arranged in P
In type semiconductor layer 23, reflective layer 30 is in p type semiconductor layer 23 on region in addition to 51 region of P-type electrode.Insulating layer
40 are laid in groove 100 and on reflective layer 30, and insulating layer 40 is equipped with the first through hole 200 for extending to P-type electrode 51 and prolongs
Extend to the second through-hole 300 of N-type electrode 52.N-type pad 53 and p-type pad 54 are arranged at intervals on insulating layer 40, p-type pad 54
P-type electrode 51 is extended to by first through hole 200, N-type pad 53 extends to N-type electrode 52 by the second through-hole 300.
In the present embodiment, as shown in Figure 1, the upper surface 500 and p-type of the upper surface 400 of insulating layer 40 and N-type pad 53
The upper surface 600 of pad 54 is generally aligned in the same plane.
It should be noted that upper surface refers to when the N-type pad of chip and p-type pad are placed in a manner of upward, chip
Uppermost surface, i.e., far from the surface of substrate.Specifically, the upper surface of insulating layer is the surface that insulating layer is contacted with reflective layer
Opposed surface, the upper surface of N-type pad is the opposed surface on the surface that N-type pad is contacted with N-type electrode, p-type pad it is upper
Surface is the opposed surface on the surface that p-type pad is contacted with P-type electrode.
The embodiment of the present invention is by setting upper with the upper surface of N-type pad and p-type pad for the upper surface of insulating layer
Surface in the same plane, can improve tin cream and directly extrude when being bonded pad and bracket to the situation between two pads,
The probability for reducing N-type pad and the conducting of p-type pad, improves the reliability of flip-chip.And realize simple process, it is suitble to industry
Metaplasia produces.
Optionally, as shown in Figure 1, the upper surface 400 of insulating layer 40 may include lug boss 410 and recessed portion 420, protrusion
Portion 410 is less than the thickness d of insulating layer 40 relative to the height h of recessed portion 420, and the top surface of lug boss 410 is upper with N-type pad 53
Surface and the upper surface of p-type pad 54 are generally aligned in the same plane；Lug boss 410 and recessed is equipped between N-type pad 53 and p-type pad 54
Concave portion 420, at least one of lug boss 410 and recessed portion 420 between N-type pad 53 and p-type pad 54 and N-type pad 53
The distance between not equal to the distance between with p-type pad 54.
By the way that the insulating layer upper surface between N-type pad and p-type pad is become rough curved surface, so that bonding weldering
The tin cream being expressed between two pads when disk and bracket flows to the recessed portion of curved surface.Since recessed portion is relative to lug boss
Depth is less than the thickness of insulating layer, therefore the bottom of recessed portion is insulating layer, can be to avoid the tin cream and conduction material in recessed portion
Material conducting.The distance between recessed portion and N-type pad are not equal to the distance between p-type pad simultaneously, can prevent tin cream just
Good flow into leads to two pad conductings among two pads.So table on insulating layer between N-type pad and p-type pad
Face is made of lug boss and recessed portion, it is possible to prevente effectively from tin cream is expressed between two pads when being bonded pad and bracket
And N-type pad and p-type pad is caused to be connected, substantially increase the reliability of flip-chip.
In a kind of implementation of the present embodiment, as shown in Figure 1, the lug boss between N-type pad 53 and p-type pad 54
410 may include the first lug boss 411 and the second lug boss 412, the distance between the first lug boss 411 and N-type pad 53 s1
Less than the distance between the first lug boss 411 and p-type pad 54 s2, the distance between the second lug boss 412 and N-type pad 53 s3
Greater than the distance between the second lug boss 412 and p-type pad 54 s4.Recessed portion 420 between N-type pad 53 and p-type pad 54
It is located between N-type pad 53 and the first lug boss 411, between the first lug boss 411 and the second lug boss 412 and second is convex
It rises between portion 412 and p-type pad 54.
By the way that lug boss is respectively set in N-type land side and p-type land side, N-type pad and p-type pad can be stopped respectively
The tin cream squeezed out when being bonded on bracket flows to another pad, avoids N-type pad and p-type pad from being connected, ensures flip-chip
Reliability.
Specifically, the distance between the first lug boss 411 and N-type pad 53 s1 can be equal to the second lug boss 412 and p-type
The distance between pad 54 s4.
Preferably, the distance between the first lug boss 411 and N-type pad 53 s1 can be 10 μm~50 μm；Second protrusion
The distance between portion 412 and p-type pad 54 s4 can be 10 μm~50 μm.
If the distance between lug boss and the pad that is closer less than 10 μm, may due to lug boss and pad it
Between be closer and cause the width of recessed portion smaller, the tin cream that recessed portion does not have enough spaces to squeeze out causes tin
Two pads are connected to by cream；If lug boss is greater than 50 μm with the distance between the pad being closer, may be due to protrusion
The distance between portion and pad cause more tin cream to flow into recessed portion farther out, cause the consumption of tin cream more.
It is highly preferred that the width w1 of the first lug boss 411 can be 5 μm~50 μm；The width w2 of second lug boss 412 can
Think 5 μm~50 μm.
If the width of lug boss less than 5 μm, can not may effectively stop tin cream since the width of lug boss is smaller,
So that two pads are connected to by tin cream；If the width of lug boss be greater than 50 μm, may it is larger due to the width of lug boss and
Cause the width of the recessed portion between the first lug boss and the second lug boss smaller, flow into the first lug boss and the second lug boss it
Between the tin cream of recessed portion be easy to for two pads being connected to.
Fig. 2 is the structural schematic diagram of another flip LED chips provided in an embodiment of the present invention.Referring to fig. 2, in this implementation
In another implementation of example, the recessed portion 420 between N-type pad 53 and p-type pad 54 may include the first recessed portion 421
With the second recessed portion 422, the distance between the first recessed portion 421 and N-type pad 53 s5 are welded less than the first recessed portion 421 with p-type
The distance between disk 54 s6, the distance between the second recessed portion 422 and N-type pad 53 s7 are greater than the second recessed portion 422 and weld with p-type
The distance between disk 54 s8.It is recessed that lug boss 410 between N-type pad 53 and p-type pad 54 is located at the first recessed portion 421 and second
Between concave portion 422.
By the way that recessed portion is respectively set in N-type land side and p-type land side, N-type pad and p-type pad can be accommodated respectively
The tin cream squeezed out when being bonded on bracket avoids tin cream that N-type pad and p-type pad are connected, ensures the reliability of flip-chip.
Specifically, the distance between the first recessed portion 421 and N-type pad 53 s5 can be equal to the second recessed portion 422 and p-type
The distance between pad 54 s8.
Optionally, as shown in Fig. 2, the lug boss 410 between N-type pad 53 and p-type pad 54 can also be located at N-type pad
53 and first between recessed portion 421 and between the second recessed portion 422 and p-type pad 54.
It, can be to avoid more tin cream flows into recessed portion and causes tin cream by adding lug boss between recessed portion and pad
Consumption it is larger.
Preferably, the distance between the first recessed portion 421 and N-type pad 53 s5 can be 10 μm~50 μm；Second recess
The distance between portion 422 and p-type pad 54 s8 can be 10 μm~50 μm.
If the distance between recessed portion and the pad that is closer less than 10 μm, may due to recessed portion and pad it
Between be closer and more tin cream caused to flow into recessed portion, the consumption of tin cream is more；If recessed portion and the weldering being closer
The distance between disk is greater than 50 μm, then may cause two since the distance between recessed portion and the pad being closer are larger
The distance between recessed portion is smaller or the width of recessed portion is smaller, can not effectively avoid tin cream that two pads are connected.
It is highly preferred that the width w3 of the first recessed portion 421 can be 5 μm~50 μm；The width w4 of second recessed portion 422 can
Think 5 μm~50 μm.
If the width of recessed portion less than 5 μm, can not may effectively accommodate tin cream since the width of recessed portion is smaller,
So that two pads are connected to by tin cream；If the width of recessed portion be greater than 50 μm, may it is larger due to the width of recessed portion and
More tin cream is caused to flow into recessed portion, the consumption of tin cream is more.
In above two implementation, the thickness that the N-type pad 53 on insulating layer 40 is arranged in can be equal to lug boss
410 height relative to recessed portion 420, the thickness that the p-type pad 54 on insulating layer 40 is arranged in can be equal to 410 phase of lug boss
For the height of recessed portion 420.
Preferably, lug boss 410 can be 2 μm~6 μm relative to the height of recessed portion 420.
If lug boss relative to recessed portion height less than 2 μm, may height due to lug boss relative to recessed portion
Tin cream that is smaller and causing recessed portion not have enough spaces to squeeze out is spent, tin cream is caused to be connected to two pads；If convex
Rise portion relative to recessed portion height be greater than 6 μm, then may it is larger relative to the height of recessed portion due to lug boss and cause compared with
More tin creams flows into recessed portion, causes the consumption of tin cream more.
Fig. 3 is the structural schematic diagram of another flip LED chips provided in an embodiment of the present invention.Referring to Fig. 3, above-mentioned two
In kind implementation, side of the N-type pad 53 far from p-type pad 54 can be equipped with lug boss 410 and recessed portion 420, N-type pad
The recessed portion 420 of the 53 side settings far from p-type pad 54 is located at the convex of side setting of the N-type pad 53 far from p-type pad 54
It rises between portion 410 and N-type pad 53.Side of the p-type pad 54 far from N-type pad 53 can also be equipped with lug boss 410 and recess
Portion 420, p-type pad 54 are located at p-type pad 54 far from N-type pad 53 far from the recessed portion 420 that the side of N-type pad 53 is arranged
Between the lug boss 410 and p-type pad 54 of side setting.
By becoming rough far from the insulating layer upper surface of another pad side in N-type pad and p-type pad
Curved surface allows tin cream when bonding pad and bracket to flow to the side of N-type pad and p-type pad far from another pad, keeps away
Exempt from tin cream inflow leads to two pad conductings among two pads, further improves the reliability of flip-chip.
In practical applications, it is also possible to the lug boss that N-type pad is arranged far from the side of p-type pad and is located at N-type pad
Between the recessed portion and N-type pad that side far from p-type pad is arranged, the protrusion of side setting of the p-type pad far from N-type pad
Portion is located between recessed portion and p-type pad that p-type pad is arranged far from the side of N-type pad.
Specifically, the material of substrate 10 can use sapphire, preferably graphical sapphire substrate (English:
Patterned Sapphire S, referred to as: PSS).The material of n type semiconductor layer 21 can use the nitridation of n-type doping (such as silicon)
Gallium.Active layer 22 may include that multiple Quantum Well and multiple quantum are built, and multiple Quantum Well and multiple quantum build alternately laminated setting；
The material of Quantum Well can use InGaN, and the material that quantum is built can use gallium nitride.The material of p type semiconductor layer 23 can
Using the gallium nitride of p-type doping (such as magnesium).The metallic reflector that reflective layer 30 can be formed for metal materials such as silver, aluminium,
It can be Distributed Bragg Reflection layer (English: Distributed Bragg Reflection, abbreviation: DBR).Insulating layer 40
Material can use silica (SiO2) or silicon nitride (SiN).P-type electrode 51, N-type electrode 52, p-type pad 53, N-type
The material of pad 54 can be using one in golden (Au), aluminium (Al), copper (Cu), nickel (Ni), platinum (Pt), chromium (Cr), titanium (Ti)
Kind is a variety of.
Optionally, which can also include transparent conductive film, and transparent conductive film setting is partly led in p-type
On body layer.Further, the material of transparent conductive film can be using tin indium oxide (English: Indium tin oxide, letter
Claim: ITO).
The embodiment of the invention provides a kind of production methods of flip LED chips, are suitable for the production any institute of FIG. 1 to FIG. 3
The flip LED chips shown.Fig. 4 provides a kind of flow chart of the production method of flip LED chips for the embodiment of the present invention.Referring to figure
4, which includes:
Step 201: successively growing n type semiconductor layer, active layer and p type semiconductor layer on substrate.
Fig. 5 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 201
Structure schematic diagram.Wherein, 10 substrate is indicated, 21 indicate n type semiconductor layer, and 22 indicate active layer, and 23 indicate p type semiconductor layer.Ginseng
See that Fig. 5, n type semiconductor layer 21, active layer 22, p type semiconductor layer 23 are sequentially laminated on a surface of the 10 of substrate.
Specifically, which may include:
Using metallo-organic compound chemical gaseous phase deposition (English: Metal Organic Chemical Vapor
Deposition, referred to as: MOCVD) technology successively grows n type semiconductor layer, active layer and p type semiconductor layer on substrate.
Step 202: the groove for extending to n type semiconductor layer is opened up on p type semiconductor layer.
Fig. 6 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after performing step 202
Structure schematic diagram.Wherein, 100 groove is indicated.Referring to Fig. 6, groove 100 extends to n type semiconductor layer 21 from p type semiconductor layer 23.
Specifically, which may include:
The photoresist of certain figure is formed on p type semiconductor layer using photoetching technique, photoresist is arranged in P-type semiconductor
Layer is on the region in addition to groove region；
Using sense coupling (English: Inductive Coupled Plasma Etch, abbreviation: ICP)
Equipment dry etching does not have the p type semiconductor layer of photoresist overlay and active layer, forms groove；
Remove photoresist.
In specific implementation, the photoresist that certain figure is formed using photoetching technique may include:
It is laid with a layer photoresist；
Photoresist is exposed by the mask plate of certain figure；
Photoresist after exposure is impregnated in developer solution, part photoresist is dissolved, the photoresist left is schemed needed for being
The photoresist of shape.
Step 203: reflective layer is formed on p type semiconductor layer.
Fig. 7 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 203
Structure schematic diagram.Wherein, 30 reflective layer is indicated.Referring to Fig. 7, reflective layer 30 is arranged on the partial region of p type semiconductor layer 23.
Optionally, when reflective layer is metallic reflector, which may include:
The photoresist of certain figure is formed in the first groove and on p type semiconductor layer using photoetching technique, photoresist is set
It sets in groove and p type semiconductor layer is on region in addition to reflective layer region；
Using physical vapour deposition (PVD) (English: Physical Vapor Deposition, abbreviation: PVD) technology in photoresist
With metal material is laid on p type semiconductor layer；
The metal material of photoresist and laying on a photoresist is removed, the metal material left forms reflective layer.
Optionally, when reflective layer is DBR, which may include:
DBR in groove and is formed on p type semiconductor layer using PVD technique；
The photoresist of certain figure is formed on DBR using photoetching technique, photoresist setting is removing reflective layer region
Except region on；
Dry etching does not have the DBR of photoresist overlay, and the DBR left forms reflective layer；
Remove photoresist.
Step 204: N-type electrode is set on the n type semiconductor layer in the first groove, and in p type semiconductor layer except reflective
P-type electrode is set on region except layer region.
Fig. 8 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after performing step 204
Structure schematic diagram.Wherein, 51 P-type electrode is indicated, 52 indicate N-type electrode.Referring to Fig. 8, P-type electrode 51 is arranged in p type semiconductor layer
On 23 region in addition to 30 region of reflective layer, the n type semiconductor layer 21 in the first groove 100 is arranged in N-type electrode 52
On.
Specifically, which may include:
Form the photoresist of certain figure in the first groove and on reflective layer using photoetching technique, photoresist setting is the
On region in one groove in addition to N-type electrode region；
Metal material is being laid on photoresist, n type semiconductor layer and p type semiconductor layer using PVD technique；
The metal material of photoresist and laying on a photoresist is removed, the metal material on n type semiconductor layer forms N-type electricity
Pole, the metal material on p type semiconductor layer form P-type electrode.
Step 205: insulating layer is formed in the first groove and on reflective layer, insulating layer is equipped with and extends to P-type electrode
First through hole, the second through-hole for extending to N-type electrode.
Fig. 9 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 205
Structure schematic diagram.Wherein, 40 insulating layer is indicated, 200 indicate first through hole, and 300 indicate the second through-hole, and 400 indicate the second groove.Ginseng
See that Fig. 9, insulating layer 40 are arranged in groove 100 on reflective layer 30, first through hole 200 extends to P-type electrode from insulating layer 40
51, the second through-hole 300 extends to N-type electrode 52 from insulating layer 40.
Specifically, which may include:
Insulating materials is laid in groove, in reflective layer and P-type electrode using PVD technique；
Form the photoresist of certain figure on the insulating material using photoetching technique, photoresist setting except first through hole and
On region except second through-hole region；
Dry etching does not have the insulating materials of photoresist overlay, forms first through hole and the second through-hole, the insulation material left
Material forms insulating layer；
Remove photoresist.
Step 206: interval setting N-type pad and p-type pad, p-type pad extend to P by first through hole on the insulating layer
Type electrode, N-type pad extend to N-type electrode, the upper surface of N-type pad, the upper surface of p-type pad and insulation by the second through-hole
The upper surface of layer is located at same surface.
Figure 10 is the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 206
Structural schematic diagram.Wherein, 53 N-type pad is indicated, 54 indicate p-type pad, and 400 indicate the upper surface of insulating layer, and 500 indicate N-type
The upper surface of pad, 600 indicate the upper surface of p-type pad.Referring to Figure 10, N-type pad 53 and p-type pad 54 are arranged at intervals on absolutely
In edge layer 40, p-type pad 54 extends to P-type electrode 51 by first through hole 200, and N-type pad 53 is extended through the second through-hole 300
To N-type electrode 52, the upper surface 500 of N-type pad 53, the upper surface 600 of p-type pad 54 and the upper surface 400 of insulating layer 40
In same surface.
Specifically, which may include:
The photoresist of certain figure is formed on the insulating layer using photoetching technique, photoresist setting is removing N-type pad and p-type
On region except pad region；
Dry etching does not have the insulating layer of photoresist overlay, forms the groove for accommodating N-type pad and p-type pad；
Using PVD technique in the N-type in the p type semiconductor layer and the second through-hole in photoresist, insulating layer, first through hole
Metal material is laid on semiconductor layer；
Remove the metal material of photoresist and laying on a photoresist, the insulation around p type semiconductor layer and first through hole
Metal material on layer forms p-type pad, and the metal material on insulating layer around n type semiconductor layer and the second through-hole forms N
Type pad.
Optionally, which can also include:
The upper surface of insulating layer is become to be made of lug boss and recessed portion, lug boss is less than relative to the height of recessed portion
The thickness of insulating layer, the top surface of lug boss and the upper surface of the upper surface of N-type pad and p-type pad are generally aligned in the same plane.
In practical applications, lug boss and recessed portion can be formed simultaneously with the groove for accommodating N-type pad and p-type pad,
To reduce photoetching process, cost of implementation is reduced.Specifically, photoresist setting is where except recessed portion, N-type pad and p-type pad
On region except region, dry etching does not have the insulating layer of photoresist overlay, can be formed for accommodating N-type pad and p-type
The groove and recessed portion of pad.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of flip LED chips, the flip LED chips include substrate, n type semiconductor layer, active layer, p type semiconductor layer,
Reflective layer, insulating layer, P-type electrode, N-type electrode, N-type pad and p-type pad；The n type semiconductor layer, the active layer and institute
It states p type semiconductor layer to stack gradually over the substrate, the p type semiconductor layer is equipped with and extends to the n type semiconductor layer
Groove；On the n type semiconductor layer of the N-type electrode setting in the groove, the P-type electrode setting is in the p-type half
In conductor layer, the reflective layer is in the p type semiconductor layer on region in addition to the P-type electrode region；It is described exhausted
Edge layer is laid in the groove and on the reflective layer, and the insulating layer is logical equipped with extend to the P-type electrode first
Hole and the second through-hole for extending to the N-type electrode；The N-type pad and the p-type pad are arranged at intervals on the insulating layer
On, the p-type pad extends to the P-type electrode by the first through hole, and the N-type pad is prolonged by second through-hole
Extend to the N-type electrode；
It is characterized in that, the upper surface position of the upper surface and the p-type pad of the upper surface of the insulating layer and the N-type pad
In same plane.
2. flip LED chips according to claim 1, which is characterized in that the upper surface of the insulating layer includes lug boss
And recessed portion, the lug boss are less than the thickness of the insulating layer, the top of the lug boss relative to the height of the recessed portion
Face is generally aligned in the same plane with the upper surface of the N-type pad and the upper surface of the p-type pad；The N-type pad and the p-type
The lug boss and the recessed portion, lug boss and recess between the N-type pad and the p-type pad are equipped between pad
The distance between at least one of portion and the N-type pad are not equal to the distance between described N-type pad.
3. flip LED chips according to claim 2, which is characterized in that between the N-type pad and the p-type pad
Lug boss include the first lug boss and the second lug boss, the distance between first lug boss and the N-type pad are less than
The distance between first lug boss and the p-type pad, the distance between second lug boss and the N-type pad are big
In the distance between second lug boss and the p-type pad；Recessed portion between the N-type pad and the p-type pad
Be located between the N-type pad and first lug boss, between first lug boss and second lug boss, Yi Jisuo
It states between the second lug boss and the p-type pad.
4. flip LED chips according to claim 3, which is characterized in that first lug boss and the N-type pad it
Between distance be 10 μm~50 μm；The distance between second lug boss and the p-type pad are 10 μm~50 μm.
5. flip LED chips according to claim 3, which is characterized in that the width of first lug boss is 5 μm~50
μm；The width of second lug boss is 5 μm~50 μm.
6. flip LED chips according to claim 2, which is characterized in that between the N-type pad and the p-type pad
Recessed portion include the first recessed portion and the second recessed portion, the distance between first recessed portion and the N-type pad are less than
The distance between first recessed portion and the p-type pad, the distance between second recessed portion and the N-type pad are big
In the distance between second recessed portion and the p-type pad；Lug boss between the N-type pad and the p-type pad
It is located between first recessed portion and second recessed portion.
7. flip LED chips according to claim 6, which is characterized in that between the N-type pad and the p-type pad
Lug boss be also located between the N-type pad and first recessed portion and second recessed portion and the p-type pad
Between.
8. according to the described in any item flip LED chips of claim 2~7, which is characterized in that the N-type pad is far from the P
The side of type pad is equipped with the lug boss and the recessed portion, and the N-type pad is arranged far from the side of the p-type pad
Recessed portion is located between lug boss and the N-type pad that the N-type pad is arranged far from the side of the p-type pad；The P
Type pad is equipped with the lug boss and the recessed portion far from the side of the N-type pad, and the p-type pad is far from the N-type
The recessed portion of the side setting of pad is located at lug boss and the P that the p-type pad is arranged far from the side of the N-type pad
Between type pad.
9. according to the described in any item flip LED chips of claim 2~7, which is characterized in that be arranged on the insulating layer
The thickness of N-type pad is equal to height of the lug boss relative to the recessed portion, and the p-type pad on the insulating layer is arranged in
Thickness be equal to height of the lug boss relative to the recessed portion.
10. a kind of production method of flip LED chips, which is characterized in that the production method includes:
N type semiconductor layer, active layer and p type semiconductor layer are successively grown on substrate；
The groove for extending to the n type semiconductor layer is opened up on the p type semiconductor layer；
Reflective layer is formed on the p type semiconductor layer；
N-type electrode is set on n type semiconductor layer in the groove, and removes the reflective layer institute in the p type semiconductor layer
P-type electrode is set on the region except region；
In the groove with form insulating layer on the reflective layer, the insulating layer is equipped with and extends to the P-type electrode
First through hole, the second through-hole for extending to the N-type electrode；
Interval setting N-type pad and p-type pad, the p-type pad are extended to by the first through hole on the insulating layer
The P-type electrode, the N-type pad extend to the N-type electrode by second through-hole, the upper surface of the N-type pad,
The upper surface of the p-type pad and the upper surface of the insulating layer are located at same surface.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113257959A (en) * | 2021-04-09 | 2021-08-13 | 深圳市思坦科技有限公司 | Preparation method of micro light-emitting diode chip, micro light-emitting diode chip and display module |
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| US20130221394A1 (en) * | 2012-02-24 | 2013-08-29 | Genesis Photonics Inc. | Light emitting diode and flip-chip light emitting diode package |
| CN104505446A (en) * | 2014-12-17 | 2015-04-08 | 晶科电子（广州）有限公司 | Flip LED (light-emitting diode) chip with high luminous efficiency and good heat radiating performance and preparation method thereof |
| CN204315628U (en) * | 2014-12-30 | 2015-05-06 | 广州市鸿利光电股份有限公司 | A kind of LED flip chip and LED flip chip group |
| CN105244419A (en) * | 2014-06-18 | 2016-01-13 | 晶能光电（常州）有限公司 | Preparation method of wafer level thin-film flip LED chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130221394A1 (en) * | 2012-02-24 | 2013-08-29 | Genesis Photonics Inc. | Light emitting diode and flip-chip light emitting diode package |
| CN105244419A (en) * | 2014-06-18 | 2016-01-13 | 晶能光电（常州）有限公司 | Preparation method of wafer level thin-film flip LED chip |
| CN104505446A (en) * | 2014-12-17 | 2015-04-08 | 晶科电子（广州）有限公司 | Flip LED (light-emitting diode) chip with high luminous efficiency and good heat radiating performance and preparation method thereof |
| CN204315628U (en) * | 2014-12-30 | 2015-05-06 | 广州市鸿利光电股份有限公司 | A kind of LED flip chip and LED flip chip group |
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| CN113257959A (en) * | 2021-04-09 | 2021-08-13 | 深圳市思坦科技有限公司 | Preparation method of micro light-emitting diode chip, micro light-emitting diode chip and display module |
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