CN210837718U - 一种共极整流二极管封装结构 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/30—Driver circuits
- H05B45/37—Converter circuits
- H05B45/3725—Switched mode power supply [SMPS]
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- H—ELECTRICITY
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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Abstract
本实用新型涉及一种共极整流二极管封装结构,包含有共极封装组件,所述共极封装组件包含有共阳极封装和共阴极封装;所述共阳极封装和共阴极封装均包含有两个整流二极管和包覆于整流二极管外侧的封装体,所述封装体上均设有三个引脚。所述共阳极封装中,其中一个所述引脚与两个整流二极管的正极端电性连接,其余两个所述引脚各自与其中一个整流二极管的负极端一对一电性连接。本实用新型通过拆分传统整流组件,缩小封装件的体积,可节省材料,降低成本,并且使其应用更加灵活。
Description
技术领域
本实用新型涉及半导体电子器件领域,具体指有一种共极整流二极管封装结构。
背景技术
LED照明因其发光效率高,相比起传统照明方式节能明显,而且寿命更长,因此已经成为当今世界的主流照明方式。
通常照明设备中的LED灯泡在使用时,需要通过电路中的整流组件将交流电转换成直流电,才能满足LED灯泡的照明需求。目前主流的LED电路整流方式是采用全桥整流组件,将电网中的交流电转换成合适的电流源或电压源,进而驱动LED灯珠发光。但由二极管组成的全桥整流组件通常体积较大,不能灵活运用于各种狭隘的场景,而且外部需要焊接保护壳,焊接相对麻烦;而集成桥堆虽然体积小,但不可拆分使用,当需要拉长正负极间距时,需要浪费较长导线,导致成本提高。
针对上述的现有技术存在的问题设计一种共极整流二极管封装结构是本实用新型研究的目的。
实用新型内容
针对上述现有技术存在的问题,本实用新型在于提供一种可适用范围广,且能够节省材料成本,提高生产效率的共极整流二极管封装结构,能够有效解决上述现有技术存在的问题。
本实用新型的技术方案是:
一种共极整流二极管封装结构,包含有共极封装组件,所述共极封装组件包含有共阳极封装和共阴极封装;所述共阳极封装和共阴极封装均包含有两个整流二极管和包覆于整流二极管外侧的封装体,所述封装体上均设有三个引脚。
进一步地,所述共阳极封装中,其中一个所述引脚与两个整流二极管的正极端电性连接,其余两个所述引脚各自与其中一个整流二极管的负极端一对一电性连接。
进一步地,所述共阴极封装中,其中一个所述引脚与两个整流二极管的负极端电性连接,其余两个所述引脚各自与其中一个整流二极管的正极端一对一电性连接。
进一步地,所述封装体为树脂封装。
本技术方案具有如下技术效果:
本实用新型将传统的全桥整流组件拆分为两部分,即共阳极封装和共阴极封装,不仅减小封装体积,使其能够灵活运用于各种狭隘的场景,适用范围更广;而且拆分后的共阳极封装和共阴极封装其封装体体积更小,可节省材料,降低成本;同时与灯串等设备搭配使用时,只需将共阴极封装和共阳极封装分别与设备的正负两端相连即可,布线较为方便且简洁,从而降低布线成本。
附图说明
图1为本实用新型的结构示意图。
图2为共阳极封装的结构示意图。
图3为共阴极封装的结构示意图。
附图标记:共极封装组件1;共阳极封装2;共阴极封装3;整流二极管4;封装体5;引脚6;交流电源7;LED灯串8。
具体实施方式
为了便于本领域技术人员理解,现将实施例结合附图对本实用新型的结构作进一步详细描述:
本实用新型之一种实施例,参考图1-3,一种共极整流二极管封装结构,包含有共极封装组件1,所述共极封装组件1包含有共阳极封装2和共阴极封装3;所述共阳极封装2和共阴极封装3均包含有两个整流二极管4和包覆于整流二极管4外侧的封装体5,所述封装体5上均设有三个引脚6。本实施例中,共极封装组件1由共阳极封装2和共阴极封装3组成,共阳极封装2和共阴极封装3分别由两个整流二极管4和封装体5组成,与传统的全桥整流组件相比,体积更小,因此可适用的场景范围更广,且与其他设备应用时,例如与LED灯串8搭配使用,将灯串8设置于共阳极封装2和共阴极封装3之间,就能够使布线更加简洁,从而降低布线成本。
具体的,参考图2,所述共阳极封装2中,其中一个所述引脚6与两个整流二极管4的正极端电性连接,其余两个所述引脚6各自与其中一个整流二极管4的负极端一对一电性连接。本实施例中,当共阳极封装2与外部设备连接时,只需将与整流二极管4的正极端相连的引脚6与设备连接,其余两个引脚6分别与交流电源7两端连接即可,方便快捷,从而有效地提高生产效率。
具体的,参考图3,所述共阴极封装3中,其中一个所述引脚6与两个整流二极管4的负极端电性连接,其余两个所述引脚6各自与其中一个整流二极管4的正极端一对一电性连接。本实施例中,当共阴极封装3与外部设备连接时,只需将与整流二极管4的负极端相连的引脚6与设备连接,其余两个引脚6分别与交流电源7两端连接即可,方便快捷,从而有效地提高生产效率。
具体的,所述封装体5为树脂封装。本实施例中,采用树脂封装不仅体积小,而且能够使内部电子元件具有较强的抗外力冲击性,延长设备的使用寿命。
实施例1
参考图1,将本实用新型的共极封装组件1与LED灯串8搭配使用时,可将共阴极封装3、LED灯串8、共阳极封装2按顺序连接,其中共阴极封装3与整流二极管4的正极端相连的引脚6、共阳极封装2与整流二极管4的正极端相连的引脚6,分别与LED灯串8正负极电性连接;共阳极封装2和共阴极封装3各自剩余的两个引脚6以并联的方式与交流电源7相连即可实现整流供电。
以上所述仅为本实用新型的较佳实施例,凡依本实用新型申请专利范围所做的均等变化与修饰,皆应属于本实用新型的涵盖范围。
Claims (4)
1.一种共极整流二极管封装结构,包含有共极封装组件,其特征在于:所述共极封装组件包含有共阳极封装和共阴极封装;所述共阳极封装和共阴极封装均包含有两个整流二极管和包覆于整流二极管外侧的封装体,所述封装体上均设有三个引脚。
2.根据权利要求1所述的一种共极整流二极管封装结构,其特征在于:所述共阳极封装中,其中一个所述引脚与两个整流二极管的正极端电性连接,其余两个所述引脚各自与其中一个整流二极管的负极端一对一电性连接。
3.根据权利要求1所述的一种共极整流二极管封装结构,其特征在于:所述共阴极封装中,其中一个所述引脚与两个整流二极管的负极端电性连接,其余两个所述引脚各自与其中一个整流二极管的正极端一对一电性连接。
4.根据权利要求1所述的一种共极整流二极管封装结构,其特征在于:所述封装体为树脂封装。
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US6972528B2 (en) * | 2003-11-21 | 2005-12-06 | Chiliang Shao | Structure for LED lighting chain |
TW200723559A (en) * | 2005-12-13 | 2007-06-16 | Ind Tech Res Inst | Alternating current (AC) light emitting assembly and AC light emitting device |
US7265496B2 (en) * | 2005-09-23 | 2007-09-04 | Fiber Optic Designs, Inc. | Junction circuit for LED lighting chain |
KR100968843B1 (ko) * | 2005-12-16 | 2010-07-09 | 서울옵토디바이스주식회사 | 다수의 발광셀이 어레이된 발광소자 |
TWI371870B (en) * | 2006-11-08 | 2012-09-01 | Epistar Corp | Alternate current light-emitting device and fabrication method thereof |
US7609006B2 (en) * | 2008-02-18 | 2009-10-27 | Ventur Research And Development Corp. | LED light string with split bridge rectifier and thermistor fuse |
US8324025B2 (en) * | 2010-04-22 | 2012-12-04 | Team Pacific Corporation | Power semiconductor device packaging |
US20130075891A1 (en) * | 2011-09-23 | 2013-03-28 | Formosa Microsemi Co., Ltd. | Flip chip type full wave rectification semiconductor device and its manufacturing method |
US10079553B1 (en) * | 2017-11-27 | 2018-09-18 | Sirectifier Electronics Co., Ltd. | Bridge rectifier circuit component |
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