CN210805744U - High-efficient heat radiation structure suitable for high-power IGBT - Google Patents
High-efficient heat radiation structure suitable for high-power IGBT Download PDFInfo
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- CN210805744U CN210805744U CN201920752237.3U CN201920752237U CN210805744U CN 210805744 U CN210805744 U CN 210805744U CN 201920752237 U CN201920752237 U CN 201920752237U CN 210805744 U CN210805744 U CN 210805744U
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Abstract
The utility model provides a high-efficient heat radiation structure suitable for high-power IGBT, the utility model discloses structurally include IGBT module, heat pipe cavity structure and initiative liquid cooling structure, wherein, heat dissipation cavity's inside be provided with insulating working medium, the IGBT module set up heat pipe cavity structure's inside and submergence be in insulating working medium in, initiative liquid cooling structure include the cooling plate and set up and be in the inside Dean pipeline of cooling plate, the cooling plate airtight fixing heat pipe cavity's top. The insulated working medium is immersed in the IGBT module, the IGBT is protected from being damaged by the external environment through the integrated heat pipe structure formed by the heat pipe cavity structure and the active liquid cooling structure, the integral temperature equalizing performance of the IGBT module is improved, the heat exchange strength between the IGBT module and the external environment is enhanced, the reliability of the IGBT module is improved, the service life of the IGBT is prolonged, and the yield is increased.
Description
Technical Field
The utility model relates to a heat radiation structure more particularly indicates a high-efficient heat radiation structure suitable for high-power IGBT.
Background
The IGBT is a core device for energy conversion and transmission, is a "CPU" of a power electronic device, and plays an important role in the entire application system. The protection IGBT can improve the power utilization efficiency and quality, has the characteristics of high efficiency, energy conservation and environmental protection, and is a key support technology for solving the problem of energy shortage and reducing carbon emission.
General electronic components are sensitive to external environment changes, the cleanliness of the IGBT for the surrounding environment is high, and dust, sulfur oxide, nitrogen oxide and the like in the air can increase the failure rate of the IGBT and shorten the service life of the IGBT.
In addition, the IGBT can generate heat in use, and heat needs to be dissipated timely through a radiator. The traditional radiator uses radiating fins to exchange heat with air, so that the radiating capacity is limited and the temperature-equalizing performance is poor. Due to the excellent temperature equalizing performance of the heat pipe, the heat pipe is applied to the heat dissipation of the IGBT; the mode of heating the radiating fins by the heat pipes is used for radiating and equalizing the temperature of the IGBT, and is limited by the radiating capacity of the radiating fins, and the power (or the heat productivity) of the IGBT cannot be too large. In a word, in order to timely dissipate heat of the high-power IGBT, the temperature of the IGBT cannot be controlled within a reasonable temperature range by using a passive heat dissipation method such as a heat dissipation fin or a heat dissipation fin heating pipe.
Therefore, how to protect the high-power IGBT from being influenced by the outside world, the temperature uniformity is improved, and meanwhile, the heat exchange strength between the IGBT and the environment is enhanced, which is an important technical problem to be solved in the field at present.
SUMMERY OF THE UTILITY MODEL
The utility model discloses a main aim at provides a high-efficient heat radiation structure suitable for high-power IGBT, it protects IGBT through unique structural design and avoids receiving external environment infringement, improves IGBT module's whole samming performance, strengthens IGBT module and external environment's heat transfer intensity, promotes IGBT module reliability, prolongs IGBT's life.
It is another object of the present invention to provide a manufacturing method of a high-efficiency heat dissipation structure suitable for a high-power IGBT, so as to increase the yield of the heat dissipation structure.
The technical scheme of the utility model is that: the utility model provides a high-efficient heat radiation structure suitable for high-power IGBT, includes IGBT module, heat pipe cavity structure and initiative liquid cooling structure, wherein, heat radiation cavity's inside be provided with insulating working medium, the IGBT module setting be in heat pipe cavity structure's inside and submergence insulating working medium in, initiative liquid cooling structure include the cooling plate and set up and be in the inside Dean pipeline of cooling plate, the cooling plate airtight the fixing heat pipe cavity's top.
The bottom of the heat pipe cavity structure is provided with a wire passing hole with a sealing structure, and the connecting wire of the IGBT module extends out of the heat pipe cavity structure through the wire passing hole with the sealing structure.
The cooling plate is formed by laminating and connecting an upper cover layer and a lower cover layer, a Dean channel is concavely arranged on the lower surface of the upper cover layer or the upper surface of the lower cover layer, and the Dean channel and the lower surface of the upper cover layer or the upper surface of the lower cover layer form the Dean pipeline.
And a sealing ring is arranged between the lower cover layer and the top of the heat pipe cavity structure, and a mounting groove for accommodating the sealing ring is arranged at the top of the heat dissipation cavity structure.
The Dean pipeline is a space topological structure which is formed by two or more sections of 3/4 circumferences with different radiuses or specific arc lengths and has a Dean flow effect and is periodically alternated.
The upper cover layer and the lower cover layer can be connected together through polytetrafluoroethylene lamination, and can also be welded together through brazing.
The heat pipe cavity structure can be provided with a porous foam metal or a multilayer wire mesh woven structure at the position of the insulating working medium.
The utility model has the advantages that: the utility model discloses structurally include IGBT module, heat pipe cavity structure and initiative liquid cooling structure, wherein, the inside of heat dissipation cavity be provided with insulating working medium, the IGBT module set up heat pipe cavity structure's inside and submergence be in insulating working medium in, initiative liquid cooling structure include the cooling plate and set up and be in the inside Dean pipeline of cooling plate, the cooling plate airtight the fixing heat pipe cavity's top. The insulated working medium is immersed in the IGBT module, the IGBT is protected from being damaged by the external environment through the integrated heat pipe structure formed by the heat pipe cavity structure and the active liquid cooling structure, the integral temperature equalizing performance of the IGBT module is improved, the heat exchange strength between the IGBT module and the external environment is enhanced, the reliability of the IGBT module is improved, the service life of the IGBT is prolonged, and the yield is increased.
Drawings
Fig. 1 is a schematic view of the cross-sectional structure of the present invention.
Fig. 2 is a schematic structural view of the active liquid cooling structure of the present invention.
FIG. 3 is a schematic structural diagram of a Dean channel disposed on a lower cover layer or an upper cover layer of an active liquid cooling structure;
Detailed Description
Fig. 1 to fig. 2 show a preferred specific embodiment of the present invention, a high-efficiency heat dissipation structure suitable for high-power IGBT, including an IGBT module 10, a heat pipe cavity 20 and an active liquid cooling structure 30, wherein, the inside of the heat dissipation cavity 20 is provided with an insulating working medium 21, the IGBT module 10 is disposed inside the heat pipe cavity 20 and is immersed in the insulating working medium 21, the active liquid cooling structure 30 includes a cooling plate 31 and a Dean pipe 32 disposed inside the cooling plate 31, and the cooling plate 31 is fixed on the top of the heat pipe cavity 20 in a sealing manner.
Further, a line passing hole 22 with a sealing structure is arranged at the bottom of the heat pipe cavity structure 20, and the connecting line 11 of the IGBT module 10 extends out of the heat pipe cavity structure 20 through the line passing hole 22 with the sealing structure to be connected with other external equipment.
Further, the cooling plate 31 is formed by laminating and connecting an upper cover layer 311 and a lower cover layer 312, a Dean channel 321 is concavely arranged on the lower surface of the upper cover layer 311 or the upper surface of the lower cover layer 312, and the Dean channel 321 and the lower surface of the upper cover layer 311 or the upper surface of the lower cover layer 312 form the Dean pipe 32. A sealing ring a is arranged between the lower cover layer 312 and the top of the heat pipe cavity structure 20, and specifically, a mounting groove B for accommodating the sealing ring a is arranged at the top of the heat dissipation cavity structure 20.
The Dean pipeline 32 is a space topological structure which is formed by two or more sections of 3/4 circumferences with different radiuses or specific arc lengths and has a Dean flow effect and is periodically alternated. And a cooling working medium is arranged in the Dean pipeline, and the cooling working medium is one or a mixture of water, ethanol or ethylene glycol.
Further, the lower cover layer 311 and the upper cover layer 312 form an integrated active liquid cooling structure 30 and heat pipe cavity structure 20 to form a heat pipe structure.
The heat pipe cavity structure and the active liquid cooling structure can be mechanically connected through a sealing ring and can also be subjected to laser welding, friction stir welding or brazing welding.
Further, the upper cover layer 311 and the lower cover layer 312 may be laminated together by ptfe, or may be brazed together to ensure that the channels do not interfere with each other.
It should be noted that the heat pipe cavity structure 20 may be provided with a porous metal foam or a multi-layer wire mesh woven structure for isolating the IGBT module at the position of the insulating working medium 21, so as to increase the heat exchange and temperature equalization effects. The shape of the heat pipe cavity structure is not limited to square, and can be round and other shapes, and when different shapes are changed, the active liquid cooling structure should be changed in the same way.
Further, the insulating working medium 20 is not limited to ethanol, perfluorohexane, tetrafluoroethane, and the like.
A manufacturing method of a high-efficiency heat dissipation structure suitable for a high-power IGBT comprises the following steps:
step one, placing an IGBT module into the interior of a heat pipe cavity structure, and connecting wires (power wires, control wires and other external structure connecting wires) to external equipment through wire passing holes with sealing functions;
mechanically connecting the sealing ring and the active liquid cooling structure through a flange structure;
and step three, vacuumizing the whole heat pipe cavity structure, filling an insulating working medium, and sealing after continuously vacuumizing.
It is worth mentioning that in the second step, when the IGBT module is placed on the heat pipe cavity structure, a medium for reducing thermal contact resistance does not need to be added at the bottom of the IGBT module and inside the cavity, and only stability needs to be ensured without displacement.
In the third step, if the working medium is liquid under normal pressure, the heat pipe cavity structure can be placed in warm water at 50 ℃ for vacuumizing; if the working medium is a refrigerant, the heat pipe cavity structure needs to be placed in ice water, and the refrigerant is filled into the cavity structure by utilizing the temperature difference. During filling, non-condensable gas is not left in the filling device, and filling and degassing are carried out simultaneously through the three-way valve, so that filling of the working medium is guaranteed.
The embodiments and drawings of the present invention are only for illustrating the design concept of the present invention, and the protection scope of the present invention should not be limited to this embodiment.
From the above, it can be seen that the objects of the present invention are efficiently attained. The part of the embodiments that illustrate the objectives and the functional and structural objects of the invention, and include other equivalents.
Accordingly, the invention is intended to cover other equally effective embodiments, as the scope of the appended claims will refer to.
Claims (8)
1. The utility model provides a high-efficient heat radiation structure suitable for high-power IGBT which characterized in that: including IGBT module, heat pipe cavity structure and initiative liquid cooling structure, wherein, the inside of heat pipe cavity be provided with insulating working medium, the IGBT module setting be in heat pipe cavity structure's inside and submergence be in insulating working medium, initiative liquid cooling structure include the cooling plate and set up and be in the inside Dean pipeline of cooling plate, the cooling plate airtight fix the top of heat pipe cavity.
2. The efficient heat dissipation structure for high-power IGBTs as claimed in claim 1, wherein the bottom of the heat pipe cavity structure is provided with a wire hole with a sealing structure, and the connecting wire of the IGBT module extends out of the heat pipe cavity structure through the wire hole with the sealing structure.
3. A high efficiency heat dissipation structure suitable for high power IGBT as recited in claim 1, wherein said cooling plate is formed by stacking and connecting an upper cover layer and a lower cover layer, a Dean channel is concavely disposed on the lower surface of said upper cover layer or the upper surface of said lower cover layer, and said Dean channel and the lower surface of said upper cover layer or the upper surface of said lower cover layer form said Dean duct.
4. The efficient heat dissipation structure suitable for high-power IGBTs as claimed in claim 3, wherein a sealing ring is disposed between the lower cover layer and the top of the heat pipe cavity structure, and an installation groove for accommodating the sealing ring is disposed on the top of the heat pipe cavity structure.
5. A high-efficiency heat dissipation structure suitable for high-power IGBTs as claimed in claim 1 or 3, wherein said Dean pipe forms a space topology structure with Dean flow effect, periodically alternating for 3/4 circumferences with different radii or specific arc length.
6. A high efficiency heat dissipation structure suitable for high power IGBT as defined in claim 3, wherein the upper cover layer and the lower cover layer are laminated together by teflon or soldered together.
7. The efficient heat dissipation structure for high-power IGBTs as claimed in claim 1, wherein said heat pipe cavity structure is configured with a porous metal foam or a multi-layer wire mesh woven structure at said working medium.
8. The efficient heat dissipation structure suitable for the high-power IGBT as recited in claim 1, wherein said insulating working medium is ethanol, perfluorohexane, tetrafluoroethane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920752237.3U CN210805744U (en) | 2019-05-23 | 2019-05-23 | High-efficient heat radiation structure suitable for high-power IGBT |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920752237.3U CN210805744U (en) | 2019-05-23 | 2019-05-23 | High-efficient heat radiation structure suitable for high-power IGBT |
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| CN210805744U true CN210805744U (en) | 2020-06-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110223963A (en) * | 2019-05-23 | 2019-09-10 | 顺科新能源技术股份有限公司 | A kind of high-efficiency heat radiation structure and its manufacturing method suitable for high-power IGBT |
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2019
- 2019-05-23 CN CN201920752237.3U patent/CN210805744U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110223963A (en) * | 2019-05-23 | 2019-09-10 | 顺科新能源技术股份有限公司 | A kind of high-efficiency heat radiation structure and its manufacturing method suitable for high-power IGBT |
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Address after: 510000 workshop A1, A2 and A3, No. 9, Weisi Road, Zengjiang street, Zengcheng, Guangzhou, Guangdong Province Patentee after: Shunke Zhilian Technology Co.,Ltd. Patentee after: GUANGZHOU INSTITUTE OF ENERGY CONVERSION, CHINESE ACADEMY OF SCIENCES Address before: 510000 workshop A1, A2 and A3, No. 9, Weisi Road, Zengjiang street, Zengcheng, Guangzhou, Guangdong Province Patentee before: SANCO NEW ENERGY TECHNOLOGY Co.,Ltd. Patentee before: GUANGZHOU INSTITUTE OF ENERGY CONVERSION, CHINESE ACADEMY OF SCIENCES |