CN210693864U - Ku waveband power amplifier assembly - Google Patents
Ku waveband power amplifier assembly Download PDFInfo
- Publication number
- CN210693864U CN210693864U CN201922413382.1U CN201922413382U CN210693864U CN 210693864 U CN210693864 U CN 210693864U CN 201922413382 U CN201922413382 U CN 201922413382U CN 210693864 U CN210693864 U CN 210693864U
- Authority
- CN
- China
- Prior art keywords
- power amplifier
- unit
- output
- amplifier assembly
- amplification unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Amplifiers (AREA)
Abstract
The utility model relates to a Ku waveband power amplifier assembly, which comprises a preceding stage power amplifier assembly, a plurality of final stage power amplifier assemblies and a control protection unit; the input of the preceding stage power amplifier component is connected with the output of the radio frequency signal of the signal source, the output of the preceding stage power amplifier component is respectively connected with a plurality of final stage power amplifier components, and the output of the final stage power amplifier components is connected with the transmitting antenna; the control protection unit is used for supplying power to the preceding-stage power amplifier assembly and the final-stage power amplifier assembly. The utility model discloses can realize that radio frequency signal exports simultaneously, output is big, small.
Description
Technical Field
The utility model relates to a Ku wave band power amplifier subassembly belongs to emission subassembly, active target simulation technical field.
Background
In 2015, the 'national defense white paper-Chinese military strategy' explicitly proposes to improve the actual combat level of military training, deeply develop analog simulation training and increase the training force requirement in a complex electromagnetic environment. In order to test the operational performance of the missile, the motion characteristics, the scattering characteristics, the radar radiation characteristics, the electromagnetic interference environment and the like of an enemy aircraft carrier formation and a weapon system during the engagement are needed to be simulated really.
Based on the method, the requirement of simulating a ship-borne electronic interference system is provided by the force, the signals transmitted by the radar are received, the required electronic interference signals are generated, electronic interference environment signals are provided for the radar and the external field test of the radar seeker, and the electronic interference environment signals are used for testing the fighting capacity of the tested radar seeker under the interference condition. The power amplifier assembly is used as a vital component in a ship-borne electronic interference system, and the performance of the power amplifier assembly directly determines the performance index of the whole analog system. The research and design of the working frequency, the working efficiency, the output power, the integration degree and the state read-back function of the power amplifier component have important engineering value and practical significance.
At present, the 10-18GHz solid-state power amplifier component has a plurality of problems, which are summarized as follows, 1) the single-port output power of the power amplifier component is low; 2) the working frequency band of the power amplifier assembly is narrow; 3) the linear dynamic of the power amplifier component is low; 4) The working efficiency of the power amplifier assembly is low; 5) the number of output ports of the power amplifier component is small and uncontrollable; 6) the power amplifier component has large volume and low integration degree;
therefore, a new technical solution is urgently needed to solve the technical problems existing in the prior art.
Disclosure of Invention
Disclosure of utility model patent
In order to solve the technical problem, the utility model provides a Ku wave band power amplifier subassembly has solved that power amplifier subassembly single port output is little, the power amplifier subassembly output port problem of small in quantity.
The patent of the utility model adopts the following technical scheme: a Ku waveband power amplifier assembly comprises a preceding stage power amplifier assembly, a plurality of final stage power amplifier assemblies and a control protection unit; the input of the preceding stage power amplifier component is connected with the output of the radio frequency signal of the signal source, the output of the preceding stage power amplifier component is respectively connected with a plurality of final stage power amplifier components, and the output of the final stage power amplifier components is connected with the transmitting antenna; the control protection unit is used for supplying power to the preceding-stage power amplifier assembly and the final-stage power amplifier assembly.
Furthermore, the final-stage power amplifier assembly comprises a shell II, a feed unit II, a first amplification unit, an isolator, a second amplification unit, a six-path power divider II and a third amplification unit which are sequentially connected; the input of the first amplification unit is connected with the output port of the preceding-stage power amplifier assembly, the output of the first amplification unit is connected with the input of the isolator, the output of the isolator is connected with the input of the second amplification unit, the output of the second amplification unit is connected with the input of the six-path power divider II, the output of the six-path power divider II is respectively connected with the input ends of 6 third amplification units, and the output end of each third amplification unit is connected with the transmitting antenna; the input of the feed unit II is connected with the output of the control protection unit, and the output of the feed unit II is respectively connected with the grid electrode and the drain electrode of the first amplification unit, the second amplification unit and the third amplification unit; the first amplifying unit, the isolator, the second amplifying unit, the six power distributors II, the third amplifying unit and the feed unit II are arranged in the shell II, and the distance between the output ports of the final-stage power amplification assembly is 20 mm.
Furthermore, the maximum output power of the third amplifying unit is +43dBm, and the distance between the power amplifier chips of the third amplifying unit is 20 mm.
Further, the output power of the second amplifying unit is at most +39 dBm.
Further, the output power of the first amplifying unit is at most +23 dBm.
Furthermore, the working frequency band of the isolator is 10-18GHz, and the insertion loss is 1.0 dB.
Furthermore, the preceding-stage power amplifier assembly comprises a shell I, a feed unit I, a fourth amplification unit and a six-path power divider I which are sequentially connected; the fourth amplifying unit, the feed unit I and the six-path power divider I are arranged in the shell I; the input of the fourth amplifying unit is connected with the output of the radio-frequency signal of the signal source, the output of the fourth amplifying unit is connected with the input end of the six-path power divider I, and the output of the six-path power divider I is respectively connected with the input ends of the plurality of final-stage power amplifying components; the input of the feeding unit I is connected with the output of the control protection unit, and the output of the feeding unit I is connected with the grid electrode and the drain electrode of the fourth amplification unit.
Further, still include the radiating unit, the radiating unit includes liquid cold source and water-cooling board, and casing II is installed on the water-cooling board, and the liquid cold source is used for providing the cold source for the water-cooling board.
The protection device further comprises a decoding unit, wherein the decoding unit is used for sending a decoded control instruction to the control protection unit.
Furthermore, the power amplifier chip selected by the final power amplifier component is made of GaN.
The utility model has the advantages that: the utility model can realize the simultaneous output of radio frequency signals, has more output ports and large single-port output power of the power amplifier component;
the Ku waveband power amplifier component can realize simultaneous output of 36 paths of radio frequency signals at most; the power is supplied to the front stage power amplifier assembly and the final stage power amplifier assembly through the control protection unit;
the distance between the output ports of the Ku-band power amplifier component is 20mm, so that the miniaturization of the Ku-band power amplifier component is realized;
the maximum working frequency band of the Ku-band power amplifier assembly is 10 GHz-18 GHz;
the Ku-band power amplifier component has good linear dynamic: not less than 60 dB;
different output powers of the final-stage power amplifier component are realized by setting different input powers of the preceding-stage power amplifier component, and the maximum output power of the final-stage power amplifier component is larger than or equal to 20W;
the power amplifier chip selected by the final power amplifier assembly is made of GaN (gallium nitride), so that the Ku-band power amplifier assembly has high working efficiency which is more than or equal to 50 percent;
according to the small distance (20mm) between the power amplifier chips and the large heating density (600W/cm)2) The Ku band power amplifier component adoptsAnd the Ku waveband power amplifier assembly has good heat dissipation and high reliability due to water cooling heat dissipation.
Drawings
Fig. 1 is a schematic diagram of a power amplifier assembly according to an embodiment of the present invention;
Detailed Description
The invention will be further described with reference to the accompanying drawings:
as shown in fig. 1: a Ku waveband power amplifier assembly comprises 1 preceding stage power amplifier assembly, 6 final stage power amplifier assemblies and 1 control protection unit;
the final power amplifier assembly comprises a shell II, a feed unit II, a 0.1W amplification unit II (namely a first amplification unit), an isolator, a 4W amplification unit (namely a second amplification unit), a six-path power divider II and a 20W amplification unit (namely a third amplification unit) which are sequentially connected; the input of the 0.1W amplification unit II is connected with the output port of the preceding stage power amplifier assembly, the output of the 0.1W amplification unit II is connected with the input of the isolator, the output of the isolator is connected with the input of the 4W amplification unit, the output of the 4W amplification unit is connected with the input of the six-path power divider II, the output of the six-path power divider II is respectively connected with the input ends of 6 20W amplification units, and the output end of the 20W amplification unit is connected with the transmitting antenna; the input of the feed unit II is connected with the output of the control protection unit, and the output of the feed unit II is respectively connected with the grid electrode and the drain electrode of the 0.1W amplification unit II, the 4W amplification unit and the 20W amplification unit; and the 0.1W amplification unit II, the isolator, the 4W amplification unit, the six-path power divider II, the 20W amplification unit and the feed unit II are arranged in the shell II, and the distance between the output ports of the final-stage power amplification assembly is 20 mm.
The 20W amplification unit is used for amplifying the power of an input signal to at least 20W, the maximum output power is +43dBm according to the space radiation requirement, the distance between power amplification chips in the 20W amplification unit is 20mm, 60dB linear dynamic and output power adjustment stepping 1.0dB can be realized, the selected power amplification chips are made of GaN materials, the model can be selected to be WFDN100180-P43, a manufacturer is the fifty-fifth research institute of China electronics technology group company, the gain is 17dB, the maximum input power is +26dBm, and the class A state is selected for working.
And the six-path power divider II divides the output signals of the 4W amplifying unit into 6 paths of output with equal amplitude and equal power, the insertion loss is 13.0dB, the maximum output power is +26dBm, and the maximum input power is +39 dBm.
The 4W amplifying unit is used for amplifying the power of an input signal to at least 4W, considering that enough driving power is provided for the 20W amplifying unit, the maximum output power of the 4W amplifying unit is +39dBm, the linear dynamic of 80dB and the stepping of output power regulation of 1.0dB can be realized, the selected power amplifier chip is made of GaAs material, the model can be selected to be WFD060180-P39, and a manufacturer: the fifty-fifth research institute of the Chinese electronic technology group company has the gain of 17dB and the maximum input power of +22.0dBm, and selects the A-type state to work.
The type of the isolator is TBG902P1-M developed by Nanjing Tuobang electronic technology Limited, the working frequency band is 10-18GHz, the insertion loss is 1.0dB, the damage of the output end of the 0.1W amplification unit II due to open circuit is avoided, and meanwhile, the input impedance characteristic of the 4W amplification unit is improved.
And the 0.1W amplification unit II is used for amplifying the power of the input signal to at least 0.1W, considering that enough driving power is provided for the 4W amplification unit, the maximum output power is +23dBm, the linear dynamic of 80dB and the stepping of output power regulation by 1.0dB can be realized, the selected power amplifier chip is made of GaAs material, and the model can be selected to be HMC465, and a manufacturer: HITTITE, the gain is 16dB, the maximum input power is +7.0dBm, and the A-type state is selected to work.
And the feeding unit II is used for providing the required grid voltage and drain voltage for the 0.1W amplification unit II, the 4W amplification unit and the 20W amplification unit and has a negative voltage protection function.
The pre-stage power amplifier assembly comprises a shell I, a feed unit I, a 0.1W amplification unit I (namely a fourth amplification unit) and a six-path power divider I, wherein the amplification unit I and the feed unit I are sequentially connected; the 0.1W amplification unit I, the feed unit I and the six-path power divider I are arranged in the shell I; the input of the 0.1W amplification unit I is connected with the output of a signal source radio-frequency signal, the output of the 0.1W amplification unit I is connected with the input end of the six-path power divider I, and the output of the six-path power divider I is respectively connected with the input ends of 6 sets of final power amplification components; the input of the feed unit I is connected with the output of the control protection unit, and the output of the feed unit I is connected with the grid and the drain of the 0.1W amplification unit, and the feed unit I is used for providing a needed grid voltage, drain voltage and negative voltage protection function for the 0.1W amplification unit;
the preceding stage power amplifier assembly provides enough driving power for 6 final stage power amplifier assemblies, 6 paths of radio frequency signals are output simultaneously after 1 path of radio frequency signals are input and amplified, the maximum output power is +8dBm, 80dB linear dynamic and output power adjustment stepping 1.0dB are realized, in order to reduce the type selection total class of power amplifier chips, a 0.1W amplification unit I is designed to adopt a chip which is the same as a 0.1W amplification unit II used by the final stage power amplifier assemblies, and the maximum input power is +5.0 dBm.
The shell I and the shell II are made of red copper, the electroplating process adopts local gold plating and nickel plating, the contact part of the shell I with the 0.1W amplification unit I and the six-way power distributor I adopts the gold plating process, the contact part of the shell II with the 0.1W amplification unit II, the isolator, the 4W amplification unit, the six-way power distributor II and the 20W amplification unit adopts the gold plating process, and the gold plating removing part of the shell I and the shell II adopts the nickel plating process.
The control protection unit can select model BL-HZ5081A, is developed by Bole electric energy equipment Limited in Jiangsu province, and is used for supplying power to a preceding-stage power amplifier assembly and a final-stage power amplifier assembly, providing an overcurrent protection function for each power amplifier chip, preventing the power amplifier chip from being damaged due to the fact that the working current of the power amplifier chip exceeds the required limit current, and meanwhile judging the working state of the power amplifier chip according to the magnitude of the current required by the power amplifier chip and reporting the working state of each power amplifier chip.
The control protection unit is used for controlling the power amplifier to be powered on according to the control instruction; and reporting the working states of the preceding power amplifier assembly and the final power amplifier assembly in real time.
The power amplifier chip further comprises a heat dissipation unit, wherein the heat dissipation unit is used for dissipating heat of the final-stage power amplifier assembly and comprises a power liquid cold source and a water cooling plate, and the heat density of the power amplifier chip is as high as 600W/cm2And the space between the power amplifier chips is smaller, so that the shell II needs to be arrangedThe heat dissipation plate is arranged on a water cooling plate, rapid heat dissipation is realized, the lowest liquid supply flow of a liquid cooling source is 3L/min, the temperature rise of the surface of the water cooling plate is not more than 10 ℃, and the heat dissipation power consumption of a single final-stage power amplifier assembly is more than 400W. The whole power amplifier assembly is ensured to meet the heat dissipation requirement, and the whole system stably and reliably works at the temperature of minus 50 ℃ to plus 60 ℃.
The utility model discloses can realize 36 way radio frequency signal output simultaneously at most, the output port interval is little: 20 mm; according to the selected power amplifier chips such as HMC465, WFD060180-P39 and WFDN100180-P43, the working frequency band width can be determined to be 10 GHz-18 GHz, and the single-port output power is more than or equal to 20W; the power amplifier chip selected by the final power amplifier component is made of GaN (gallium nitride), such as WFDN100180-P43, and the work efficiency of the Ku-band power amplifier component is higher than or equal to 50%; according to the self characteristics of the selected power amplifier chips HMC465, WFD060180-P39 and WFDN100180-P43 and the selected proper working state, the linear dynamics is better than or equal to 60 dB; the water-cooling heat dissipation performance is good, the equipment reliability is high, the complete state read-back function is realized, and the modularized design is adopted, so that the assembly production, the fault location and the fault solution are facilitated.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be considered as the protection scope of the present invention.
Claims (10)
1. A Ku waveband power amplifier assembly is characterized by comprising a preceding stage power amplifier assembly, a plurality of final stage power amplifier assemblies and a control protection unit; the input of the preceding stage power amplifier component is connected with the output of the radio frequency signal of the signal source, the output of the preceding stage power amplifier component is respectively connected with a plurality of final stage power amplifier components, and the output of the final stage power amplifier components is connected with the transmitting antenna; the control protection unit is used for supplying power to the preceding-stage power amplifier assembly and the final-stage power amplifier assembly.
2. The Ku band power amplifier assembly according to claim 1, wherein the final power amplifier assembly comprises a shell II, a feed unit II, a first amplification unit, an isolator, a second amplification unit, a six-path power divider II and a third amplification unit which are sequentially connected; the input of the first amplification unit is connected with the output port of the preceding-stage power amplifier assembly, the output of the first amplification unit is connected with the input of the isolator, the output of the isolator is connected with the input of the second amplification unit, the output of the second amplification unit is connected with the input of the six-path power divider II, the output of the six-path power divider II is respectively connected with the input ends of 6 third amplification units, and the output end of each third amplification unit is connected with the transmitting antenna; the input of the feed unit II is connected with the output of the control protection unit, and the output of the feed unit II is respectively connected with the grid electrode and the drain electrode of the first amplification unit, the second amplification unit and the third amplification unit; the first amplifying unit, the isolator, the second amplifying unit, the six power dividers II, the third amplifying unit and the feed unit II are arranged in the shell II, and the distance between the output ports of the final-stage power amplifier assembly is 20 mm.
3. The Ku band power amplifier assembly of claim 2, wherein the maximum output power of the third amplification unit is +43dBm, and the distance between the power amplification chips of the third amplification unit is 20 mm.
4. The Ku band power amplifier assembly of claim 2, wherein the second amplification unit has an output power of at most +39 dBm.
5. The Ku band power amplifier assembly of claim 2, wherein the first amplification unit has an output power of at most +23 dBm.
6. The Ku band power amplifier assembly of claim 2, wherein the isolator operates at 10-18GHz and has an insertion loss of 1.0 dB.
7. The Ku band power amplifier assembly according to claim 1, wherein the pre-stage power amplifier assembly comprises a shell I, a feed unit I, a fourth amplification unit and a six-path power divider I, wherein the fourth amplification unit and the six-path power divider I are sequentially connected; the fourth amplifying unit, the feed unit I and the six-path power divider I are arranged in the shell I; the input of the fourth amplifying unit is connected with the output of the radio-frequency signal of the signal source, the output of the fourth amplifying unit is connected with the input end of the six-path power divider I, and the output of the six-path power divider I is respectively connected with the input ends of the plurality of final-stage power amplifying components; the input of the feeding unit I is connected with the output of the control protection unit, and the output of the feeding unit I is connected with the grid electrode and the drain electrode of the fourth amplification unit.
8. The Ku band power amplifier assembly of claim 2, further comprising a heat dissipation unit, wherein the heat dissipation unit comprises a liquid cooling source and a water cooling plate, the housing II is mounted on the water cooling plate, and the liquid cooling source is used for providing a cooling source for the water cooling plate.
9. The Ku band power amplifier assembly according to claim 1, further comprising a decoding unit, the decoding unit configured to issue a decoded control command to the control protection unit.
10. The Ku band power amplifier assembly of claim 1, wherein the power amplifier chip selected by the final power amplifier assembly is made of GaN.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922413382.1U CN210693864U (en) | 2019-12-27 | 2019-12-27 | Ku waveband power amplifier assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922413382.1U CN210693864U (en) | 2019-12-27 | 2019-12-27 | Ku waveband power amplifier assembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210693864U true CN210693864U (en) | 2020-06-05 |
Family
ID=70895682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922413382.1U Active CN210693864U (en) | 2019-12-27 | 2019-12-27 | Ku waveband power amplifier assembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210693864U (en) |
-
2019
- 2019-12-27 CN CN201922413382.1U patent/CN210693864U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111025235B (en) | Microwave TR assembly with ultra-wide working bandwidth | |
| CN106169915A (en) | Many gain modes power amplifier, chip and communication terminal | |
| CN108306085B (en) | Microstrip circulator with upper and lower combined structure | |
| CN210780687U (en) | S-band solid-state power amplifier | |
| CN110350882B (en) | L-band miniature chip type high-power limiter | |
| CN210693864U (en) | Ku waveband power amplifier assembly | |
| CN210693870U (en) | 6-14GHz dual-channel solid-state power amplifier | |
| CN108390691A (en) | A kind of up-link carrier polyplant and mobile terminal | |
| CN111010097A (en) | Ku waveband power amplifier assembly | |
| CN112462340A (en) | Novel S-frequency-band solid-state transmitting array surface | |
| CN107404012B (en) | S frequency range variable beam width Active Arrays | |
| Medina et al. | T/R module for CASA phase-tilt radar antenna array | |
| CN211127734U (en) | Millimeter wave miniaturized power amplification synthesis structure | |
| CN108092635A (en) | A kind of Ku wave bands solid-state power amplifier | |
| CN116582141A (en) | Large dynamic amplitude limiting circuit and receiver | |
| CA2254456C (en) | A modularly-partitioned feedforward multi-linear rf power amplifier | |
| CN210693871U (en) | Ku wave band high-power solid-state power amplifier assembly array | |
| CN111030615A (en) | 6-18 GHz ultra wide band high-power solid-state power amplifier assembly | |
| CN110912517A (en) | 8-12 GHz high-power solid-state power amplifier assembly | |
| CN213484823U (en) | S-band multifunctional power amplifier assembly | |
| CN204836094U (en) | Power amplification circuit and radio frequency circuit | |
| CN217183262U (en) | S-band broadband high-power amplifier assembly circuit | |
| CN110277970B (en) | X-waveband T/R assembly with switchable output power | |
| CN112332782A (en) | Broadband C-band solid-state power amplifier module | |
| Sreenivasulu et al. | Octal transmit receive module for wideband phased arrays |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |