CN210668385U

CN210668385U - IGBT semiconductor device

Info

Publication number: CN210668385U
Application number: CN201922331166.2U
Authority: CN
Inventors: 王新领
Original assignee: Henan Yida Digital Technology Co ltd
Current assignee: Henan Yida Digital Technology Co ltd
Priority date: 2019-12-23
Filing date: 2019-12-23
Publication date: 2020-06-02
Anticipated expiration: 2029-12-23

Abstract

The utility model relates to an IGBT semiconductor device is through improving traditional polycrystalline silicon layer and metal level structural design for IGBT semiconductor device is accelerated to the charging and the speed of discharging of cellular grid at the switching process, thereby makes the holistic switching speed of IGBT semiconductor device increase. Compare with traditional IGBT semiconductor device structure, the utility model discloses accelerated IGBT's switching speed, improved IGBT cellular switch process's homogeneity simultaneously.

Description

IGBT semiconductor device

Technical Field

The utility model relates to a power device, concretely relates to IGBT semiconductor device.

Background

PAD area: and a window is formed on the passivation layer of the chip, and a metal wire is welded on the window during packaging, is connected with the pin and leads out the potential. Specifically, there are a gate PAD region and an emitter PAD region.

A grid Bus area: in order to ensure that the edge cells are turned on or off simultaneously, the edge cells are usually surrounded by metal rings, and the gate potential is transmitted through polysilicon.

Gate Finger region: to reduce the effect of gate electrode material distribution resistance, polysilicon and metal are typically used to bring the gate potential to the cell unit further from the gate PAD.

An Insulated Gate Bipolar Transistor (IGBT), which is a novel composite power device developed on the basis of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and power transistor (GTR), has the advantages of easy driving of MOSFET, small control power, simple driving circuit, high switching speed and small switching loss, and has the advantages of low on-state voltage, large on-state current, strong current processing capability and the like of the Bipolar transistor. The IGBT switching speed regulator is widely applied to high-frequency circuits such as induction cookers, automotive electronics, frequency converters, power systems, electric welding machine switching power supplies and the like, and very high requirements are put forward on the switching speed of the IGBT.

The defects of the prior art are that the grid Bus area aluminum lead is divided into a plurality of pieces and is not directly interconnected. Whereas gate polysilicon of a typical IGBT semiconductor device has a larger resistivity than aluminum. Due to the existence of these resistivities, the charging and discharging of the cell gate farther from the PAD region is difficult to complete quickly to turn on or off. This affects not only the switching speed of the IGBT semiconductor devices, but also the switching uniformity.

SUMMERY OF THE UTILITY MODEL

The not enough to prior art, the utility model aims at providing a pair of switching speed is fast and the good IGBT semiconductor device of each intercellular switching homogeneity, this kind of new construction passes through the grid Finger aluminium lead and directly transmits the grid voltage on the grid PAD to the regional aluminium lead of grid Bus on, the transmission rate of grid voltage has been accelerated, by the four sides cell transmission voltage in to every projecting pole PAD region simultaneously, the opening or turn-off time of IGBT has been reduced, thereby reduce and open or turn-off the loss, and IGBT switching homogeneity has been improved, the slow and poor problem of switching homogeneity of switching speed of IGBT semiconductor device has been solved.

The utility model aims at adopting the following technical scheme to realize:

the IGBT semiconductor device is rectangular and comprises a grid PAD area positioned in the center of the device, grid Finger aluminum leads are symmetrically arranged on the periphery of the grid PAD area respectively, an emitter PAD area and a grid PAD area arranged at one corner of the emitter PAD area are arranged between every two grid Finger aluminum leads; the grid PAD area is connected with the grid Bus area aluminum lead wire through a grid Finger aluminum lead wire, the grid Bus area aluminum lead wire is a communicated closed loop wire, and at least one corner of the emitter PAD area is connected with a first metal field plate of the terminal protection ring through a polycrystalline silicon strip and a contact hole;

the grid Bus region aluminum lead wire surrounds a rectangular plane formed by the emitter PAD region and the grid PAD region, the grid Bus region aluminum lead wire is a communicated closed loop wire, and at least one corner of the emitter PAD region is connected with a first metal field plate of the terminal protection ring through a polycrystalline silicon strip and a contact hole; the terminal region is positioned at the edge of the IGBT semiconductor device;

and the grid Finger aluminum lead and the grid Bus area aluminum lead are arranged on a metal layer of the IGBT semiconductor device.

Preferably, the gate Finger aluminum leads extend to the periphery of each emitter PAD region, separating the emitter PAD regions.

Preferably, the grid Bus area is distributed around the emitter PAD area and surrounds the emitter PAD area;

and the grid PAD area and the grid Finger aluminum lead wire are connected with the polycrystalline silicon layer below the grid PAD area and the grid Finger aluminum lead wire through contact holes.

Preferably, the first metal field plate of the terminal guard ring is located inside the terminal region; the terminal area is positioned at the edge of the device, the polycrystalline silicon layer is disconnected at the four corners of the emitter PAD area of the IGBT semiconductor device, and the emitter PAD area is connected with the first metal field plate of the terminal protection ring through the polycrystalline silicon strip and the contact hole.

Preferably, when the IGBT semiconductor device is switched on or switched off, the grid voltage around the emitter PAD region is transmitted to the unit cells in each emitter PAD region from the periphery simultaneously through the polycrystalline silicon layer, so that the switching-on or switching-off loss of the IGBT semiconductor device is reduced.

Preferably, the grid PAD area and the emitter PAD area are arranged in windows formed in a passivation layer of the IGBT semiconductor device, metal wires are welded on the windows during packaging and are connected with pins, and grid potential and emitter potential are led out respectively;

the grid Bus area is used for ensuring that edge cells are simultaneously turned on or turned off, the edge cells of the grid PAD area are surrounded by a metal ring, and grid potential is transmitted through the polycrystalline silicon layer;

the grid Finger area is used for reducing the influence of the distribution resistance of the grid electrode material, and the grid potential is led to the cellular unit of the off-grid PAD area by adopting the polycrystalline silicon layer and metal.

The utility model discloses the beneficial effect who reaches is:

the IGBT semiconductor device provided by the utility model has simple structure, is beneficial to improving the switching speed and the switching uniformity of the IGBT, and reduces the switching loss so as to meet the high-frequency application field of the IGBT;

the grid voltage on the grid PAD 2 is directly transmitted to the grid Bus area aluminum lead 04 through the grid Finger aluminum lead 3, and the transmission speed of the grid voltage is accelerated.

The voltage is transmitted to the unit cells in each emitter PAD area from four sides at the same time, the turn-on or turn-off time of the IGBT is reduced, the turn-on or turn-off loss is reduced, and the uniformity of the IGBT switch is improved.

The on-time or off-time difference between the unit cells is reduced, which is beneficial to the internal thermal uniformity of the IGBT and the reliability of the IGBT semiconductor device.

Drawings

Fig. 1 is a schematic structural diagram of an IGBT semiconductor device provided by the present invention;

wherein, 1 emitter PAD region; 2, a grid PAD area; 3 grid Finger aluminum leads; 4 grid Bus area aluminum leads; 5 a termination region; 6 polysilicon layer; 7, a first metal field plate of the terminal protection ring; 8, contact holes; 9 polysilicon strips.

Detailed Description

The following describes the present invention in further detail with reference to the accompanying drawings.

As shown in fig. 1, an IGBT semiconductor device is rectangular, and includes a gate PAD area 2 located at the center of the device, gate Finger aluminum leads 3 are symmetrically disposed around the gate PAD area 2, and an emitter PAD area 1 and a gate PAD area 2 disposed at one corner of the emitter PAD area 1 are disposed between every two gate Finger aluminum leads; the grid PAD area is connected with a grid Bus area aluminum lead wire 4 through a grid Finger aluminum lead wire 3, the grid Bus area aluminum lead wire is a communicated closed loop wire, and at least one corner of the emitter PAD area is connected with a first metal field plate 7 of the terminal protection ring through a polycrystalline silicon strip 9 and a contact hole 8;

the grid Bus region aluminum lead wire surrounds a rectangular plane formed by the emitter PAD region and the grid PAD region, the grid Bus region aluminum lead wire is a communicated closed loop wire, and at least one corner of the emitter PAD region is connected with a first metal field plate of the terminal protection ring through a polycrystalline silicon strip and a contact hole; the terminal region 5 is positioned at the edge of the IGBT semiconductor device;

Wherein the gate Finger aluminum leads extend to the periphery of each emitter PAD area, separating the emitter PAD areas.

The grid Bus regions are distributed around the emitter PAD region and surround the emitter PAD region;

the gate PAD region and the gate Finger aluminum lead are connected to the polysilicon layer 6 therebelow through contact holes.

The first metal field plate of the terminal protection ring is positioned in the terminal area; the terminal area is positioned at the edge of the device, the polycrystalline silicon layer 6 is disconnected at the four corners of the emitter PAD area of the IGBT semiconductor device, the emitter PAD area is connected with the first metal field plate 7 of the terminal protection ring through the polycrystalline silicon strip and the contact hole, and the same potential is ensured for the two.

When the IGBT semiconductor device is switched on or switched off, the grid voltage around the emitter PAD area is transmitted to the unit cells in each emitter PAD area from the periphery through the polycrystalline silicon layer, and the grid voltage is used for reducing the switching-on or switching-off loss of the IGBT semiconductor device.

The grid PAD area and the emitter PAD area are arranged in a window formed in a passivation layer of the IGBT semiconductor device, metal wires are welded on the window during packaging, the window is connected with a pin, and grid potential and emitter potential are led out respectively;

This utility model IGBT new construction realizes simply, does not increase any process step, is favorable to improving IGBT's switching speed and switch uniformity, reduces switching loss to satisfy IGBT high frequency application field.

Finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the same, and although the present invention is described in detail with reference to the above embodiments, those of ordinary skill in the art should understand that: modifications and equivalents may be made to the embodiments of the invention without departing from the spirit and scope of the invention, which should be construed to be within the scope of the claims.

Claims

1. The IGBT semiconductor device is characterized by comprising a rectangular grid PAD area positioned in the center of the device, grid Finger aluminum leads are symmetrically arranged on the periphery of the grid PAD area respectively, an emitter PAD area and a grid PAD area arranged at one corner of the emitter PAD area are arranged between every two grid Finger aluminum leads; the grid PAD area is connected with the grid Bus area aluminum lead wire through a grid Finger aluminum lead wire, the grid Bus area aluminum lead wire is a communicated closed loop wire, and at least one corner of the emitter PAD area is connected with a first metal field plate of the terminal protection ring through a polycrystalline silicon strip and a contact hole;

2. The IGBT semiconductor device according to claim 1, wherein the gate Finger aluminum leads extend to the periphery of each emitter PAD region, separating the emitter PAD regions.

3. The IGBT semiconductor device according to claim 1, wherein the gate Bus region is distributed around an emitter PAD region, surrounding the emitter PAD region;

4. The IGBT semiconductor device according to claim 1, wherein the terminal guard ring first metal field plate is located inside the terminal region; the terminal area is positioned at the edge of the device, the polycrystalline silicon layer is disconnected at the four corners of the emitter PAD area of the IGBT semiconductor device, and the emitter PAD area is connected with the first metal field plate of the terminal protection ring through the polycrystalline silicon strip and the contact hole.

5. The IGBT semiconductor device according to claim 1, wherein when the IGBT semiconductor device is turned on or off, a gate voltage around the emitter PAD region is simultaneously transmitted from all around to the unit cells in each emitter PAD region through the polysilicon layer for reducing turn-on or turn-off loss of the IGBT semiconductor device.

6. The IGBT semiconductor device according to claim 1, wherein the gate PAD region and the emitter PAD region are arranged in a window formed on a passivation layer of the IGBT semiconductor device, and a metal wire is welded on the window and connected with a pin during packaging to lead out a gate potential and an emitter potential respectively;