CN210429865U - Quantum dot LED device of semi-cured substrate - Google Patents
Quantum dot LED device of semi-cured substrate Download PDFInfo
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- CN210429865U CN210429865U CN201920656521.0U CN201920656521U CN210429865U CN 210429865 U CN210429865 U CN 210429865U CN 201920656521 U CN201920656521 U CN 201920656521U CN 210429865 U CN210429865 U CN 210429865U
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Abstract
The utility model provides a quantum dot LED device of semi-solid substrate. The quantum dot LED device comprises a light emitting chip, a reflecting cup, a light conversion layer and a hemispherical lens; the reflecting cup is provided with a groove, and the light-emitting chip is arranged in the groove; the hemispherical lens is arranged on the upper surface of the light reflecting cup, the concave surface of the hemispherical lens is opposite to the groove of the light reflecting cup, and the hemispherical lens and the light reflecting cup form a closed structure; the light conversion layer is filled in the closed structure and is formed by solidifying quantum dots, liquid silicone oil and PDMS, the base material adopts a solid-liquid mixing form, and has a solid shaping structure in a macroscopic view, so that the stability is good, and the practical production and use are convenient; the micro-structure has a liquid structure, provides a good dispersion environment for the quantum dots, and greatly improves the radiation flux and the luminous flux compared with the traditional full-curing packaging form.
Description
Technical Field
The utility model relates to a photoluminescence's quantum dot photoconversion device's packaging technology especially relates to a quantum dot LED device of semi-solid substrate.
Technical Field
In recent years, quantum dots have attracted attention of researchers due to excellent characteristics of adjustable excitation peak wavelength, saturated light color, high quantum efficiency and the like related to size, and compared with traditional fluorescent powder, the size of quantum dot nanoparticles is far smaller than that of light wavelength, so that scattering loss in a light emitting process is greatly eliminated, and the quantum dot is applied to many fields such as Light Emitting Diodes (LEDs) and the like.
In the preparation process of the LED device, the LED device manufactured by the dispensing process occupies a considerable part. In the LED device dispensing process, quantum dot colloid needs to be configured. When the quantum dot colloid is prepared, the quantum dots are easy to agglomerate and settle due to the interaction between solutes, the interaction between the solutes and a solvent, the gravity action and the like. Under the condition of quantum dot agglomeration, quantum dots are mutually shielded, so that part of quantum dots are difficult to absorb blue light emitted by the chip. In addition, there is competition between fluorescence emission and light absorption by quantum dots. The absorption spectrum of the quantum dots is wide in wavelength range and partially overlapped with the luminescence spectrum, which means that the quantum dots can mutually absorb part of the excitation light. Therefore, agglomeration of quantum dots can also lead to loss of excitation light. The higher the concentration of the quantum dots, the more obvious the agglomeration effect. After the concentration of the quantum dots is increased to a certain degree, the light conversion efficiency is not linearly improved any more, and even is reduced, and the concentration quenching of the quantum dots is generated. Therefore, the dispersibility of the quantum dots in the LED packaging adhesive is improved, so that the light conversion is more sufficient, and the light color performance of the quantum dot LED is improved.
In order to improve the dispersibility of the quantum dots in the traditional PDMS solid packaging base material, silicone oil can be added into PDMS packaging glue, a liquid environment is microscopically created, the liquid PDMS provides a more flexible environment for the ligand on the surface of the quantum dots, the chemical bonding force in the curing process is reduced, so that the ligand is separated from the surface of the quantum dots, the surface defects are reduced, and the liquid silicone oil packaged LED packaged by adopting the liquid silicone oil has higher stability and light emitting performance.
SUMMERY OF THE UTILITY MODEL
The utility model discloses to the dispersibility problem of quantum dot in the all solid-state encapsulation device of traditional PDMS, provided a quantum dot LED device of semi-solid-state substrate. The utility model discloses add liquid silicone oil in traditional PDMS solid state encapsulation substrate, the high viscosity that utilizes liquid silicone oil provides good liquid dispersion environment for quantum dot, forms solid-liquid mixed substrate, makes the quantum dot LED device of semi-solid preparation substrate with light-emitting chip (chip), anti-light cup, lens etc. when keeping PDMS encapsulation advantage, can utilize liquid silicone oil to promote quantum dot's photochromic performance again. The preparation process is simple, the cost is low, and the preparation method is suitable for large-scale production and use.
The purpose of the utility model is realized through the following technical scheme.
A quantum dot LED device of a semi-cured substrate comprises a reflection cup, a light emitting chip, a light conversion layer and a hemispherical lens; the reflecting cup is provided with a groove, and the light-emitting chip is arranged in the groove; the hemispherical lens is arranged on the upper surface of the light reflecting cup, the hemispherical lens is provided with a concave surface, the concave surface is opposite to the groove of the light reflecting cup, and the hemispherical lens and the light reflecting cup form a closed structure; the grooves are filled with light conversion layers, and the light conversion layers are formed by curing quantum dots, liquid silicone oil and PDMS.
Further, the quantum dots comprise at least one of carbon quantum dots, CdSe quantum dots, perovskite quantum dots, CdSe/ZnS quantum dots.
Further, the PDMS is a vinyl terminated polydimethylsiloxane.
Furthermore, the light emitting chip is a blue light emitting chip, and the wavelength range of an emission peak is 430-470 nm.
Furthermore, the size range of the blue light emitting chip is (22 × 22) to (40 × 40) mil, and the thickness of the blue light emitting chip is 150 to 250 μm.
Furthermore, the light reflecting cup is a lumen imitation device, and the structure of the groove is at least one of a paraboloid shape, a conical surface shape, a trapezoidal surface shape and a spherical surface shape.
Further, the inner surface coating of the groove comprises at least one of a silver coating, a chromium coating, a nickel-silver coating and an aluminum coating, and the thickness of the inner surface coating is 0.3-0.5 mu m.
The utility model also provides a preparation the method of the quantum dot LED device of semi-solid substrate, including following step:
1) weighing quantum dots, adding chloroform, wherein the mass volume ratio of the quantum dots to the chloroform is 1-10 mg/ml, and dissolving the quantum dots in the chloroform at the temperature of 25-50 ℃ to prepare a quantum dot chloroform solution;
2) sequentially adding liquid silicone oil, PDMS and a curing agent into the quantum dot chloroform solution obtained in the step 1), wherein the mass ratio of PDMS to the curing agent is 5: 1-10: 1, the mass ratio of the liquid silicone oil to the total mass of the liquid silicone oil and PDMS is x, wherein x is more than 0 and less than or equal to 0.85, the mass ratio of the quantum dot to the mixture of the liquid silicone oil, PDMS and the curing agent is y, wherein y is more than 0 and less than or equal to 0.03, stirring until chloroform is completely volatilized, and uniformly dispersing the quantum dot in a colloid;
3) defoaming the colloid in the step 2) by using a vacuum stirring defoaming machine to enable residual bubbles in the colloid to float and break;
4) dripping quantum glue into the light reflecting cup provided with the light emitting chip, then baking and curing, and filling to finish the light conversion layer;
5) and finally, covering the hemispherical lens, injecting a pouring sealant, removing residual air, baking and curing, and completing the preparation of the quantum dot LED device.
Preferably, the quantum dots comprise at least one of carbon quantum dots, CdSe quantum dots, perovskite quantum dots and CdSe/ZnS quantum dots, the liquid silicone oil is methyl-terminated polydimethylsiloxane, and the viscosity ranges from 500m to 5000m2/s。
Preferably, the PDMS is a vinyl terminated polydimethylsiloxane.
Preferably, in the step 2), the stirring temperature is 25-50 ℃, and the stirring time is 40-60 min.
Preferably, in the step 3), a vacuum stirring defoaming machine is used for defoaming at the temperature of 25-50 ℃, and the defoaming time is 5-10 min.
Preferably, the light-emitting chip is a blue light-emitting chip, the emission peak wavelength range is 430-470 nm, the size range of the blue light-emitting chip is (22 × 22) - (40 × 40) mil, and the thickness is 150-250 μm.
Preferably, the light reflecting cup is a lumen imitation device, the structure of the groove is at least one of a paraboloid shape, a conical surface shape, a trapezoidal surface shape and a spherical surface shape, the inner surface coating of the groove comprises at least one of a silver coating, a chromium coating, a nickel-silver coating and an aluminum coating, and the thickness of the inner surface coating is 0.3-0.5 μm.
Preferably, in the step 4), quantum dots are dropped at the temperature of 25-50 ℃, the curing temperature of the quantum dots is 120-135 ℃, and the curing time is 90-110 min.
Preferably, in the step 5), the hemispherical lens (4) is covered at the temperature of 25-50 ℃, the pouring sealant is injected, the residual air is discharged, the pouring sealant is the high-power baking sealant M-2815 for encapsulation, the curing temperature of the pouring sealant is 115-130 ℃, and the curing time is 15-30 min.
Compared with the prior art, the utility model has the following beneficial effect and advantage:
(1) liquid silicone oil is introduced to serve as a flexible protective matrix, so that the quantum dot surface defects caused by addition reaction of vinyl of PDMS and OA on the surface of the quantum dots in the PDMS curing process are reduced.
(2) The utility model discloses add liquid silicone oil in vinyl end capping PDMS's substrate, utilize liquid silicone oil's high viscosity to provide good liquid dispersion environment for quantum dot, form the solid-liquid mixed substrate. Compared with the traditional PDMS packaging form, the radiation flux and the luminous flux of the quantum dot LED device with the semi-cured base material prepared by the method are greatly improved.
(3) The semi-curing packaging method has the advantages of both the liquid packaging method and the traditional PDMS packaging method, has the advantages of easiness in manufacturing and storing and the like while keeping the light color performance of the quantum dot LED improved, and can be used for conveniently, flexibly and continuously producing in a large scale.
Drawings
Fig. 1 is a structural diagram of a quantum dot LED device of a semi-cured substrate provided in example 1;
fig. 2 is a flow chart of a preparation process of a quantum dot LED device of a semi-cured substrate provided in embodiment 1;
wherein 1-a light emitting chip; 2-a light-reflecting cup; 3-a light conversion layer; 4-hemispherical lens.
Detailed Description
In order to make the technical solution of the present invention better understood by those skilled in the art, the present invention will be described in further detail with reference to the following detailed description.
Example 1
The embodiment provides a quantum dot LED device of a semi-cured substrate, as shown in fig. 1, including a reflective cup 2, a light emitting chip 1, a light conversion layer 3, and a hemispherical lens 4; the light reflecting cup 2 is provided with a groove, and the light emitting chip 1 is arranged in the groove; the hemispherical lens 4 is arranged on the upper surface of the reflecting cup 2, the hemispherical lens 4 is provided with a concave surface, the concave surface is opposite to the groove of the reflecting cup 2, and the hemispherical lens 4 and the reflecting cup 2 form a closed structure; the grooves are filled with light conversion layers 3.
The embodiment also provides a preparation method of the quantum dot LED device, and the method is shown in fig. 2 and includes the following steps:
(1) dissolving 2mg of CdSe/ZnS core/shell structure quantum dots (the emission peak wavelength is positioned near 525nm) in 1.5mL of chloroform to obtain a quantum dot chloroform solution;
(2) adding 1700mg of chloroform solution of quantum dots with the viscosity of 500m2Liquid silicone oil of/s, methyl-terminated polydimethylsiloxane, 300mg vinyl-terminated polydimethylsiloxane PDMS and a curing agent thereof (PDMS Sylgard 184 silica gel cross-linking agent) (the ratio is 10:1), stirring for 50min by a centrifugal stirrer at 25 ℃ in a fume hood to fully volatilize chloroform and fully and uniformly mix colloids;
(3) defoaming for 5min at 25 ℃ in a fume hood by using a vacuum stirring defoaming machine to enable bubbles in the colloid to float upwards and break, and obtaining quantum dots;
(4) quantum dispensing is dripped into a reflective cup 2 with a blue LED (emission peak wavelength is near 455 nm) chip arranged in the groove, namely the lumen imitation device, wherein the inner surface coating of the groove structure is a silver coating, and the thickness of the coating is 0.4 μm.
(5) Placing the reflection cup 2 injected with the quantum dots into an oven for baking and curing, wherein the baking temperature is set to 125 ℃, and the baking time is 90 min;
(6) covering a hemispherical lens 4 with the diameter of 5mm, injecting high-power baking glue M-2815 for encapsulation into the lumen simulating device, and discharging residual air;
(7) and then, putting the device into an oven for baking at the temperature of 120 ℃ for 15min, and taking the device out of the oven to obtain the semi-cured substrate quantum dot LED device.
Compared with the traditional PDMS full-curing packaging device, the luminous flux of the quantum dot LED device of the semi-cured base material is increased by 5lm, the light radiation flux of a chip is increased by 30mW, the light radiation flux of the quantum dot is 10mW, and the light conversion efficiency is increased by 4%.
Example 2
The embodiment provides a method for a quantum dot LED device of a semi-cured substrate, which comprises the following steps:
basically the same as example 1, except that 6mg of CdSe/ZnS core/shell structure quantum dots (emission peak wavelength at 525nm) were added in step (1), and the other conditions were not changed.
Compared with the traditional PDMS full-curing packaging device, the luminous flux of the quantum dot LED device of the prepared semi-curing base material is improved by 7lm, the light radiation flux of a chip is improved by 27mW, the light radiation flux of the quantum dot is 11mW, and the light conversion efficiency is improved by 6%.
Example 3
The embodiment provides a method for a quantum dot LED device of a semi-cured substrate, which comprises the following steps:
basically the same as example 1, except that 10mg of CdSe/ZnS core/shell structure quantum dots (emission peak wavelength at 525nm) were added in step (1), and the other conditions were not changed.
Compared with the traditional PDMS full-curing packaging device, the luminous flux of the quantum dot LED device of the semi-cured base material is increased by 11lm, the light radiation flux of a chip is increased by 14mW, the light radiation flux of the quantum dot is increased by 13mW, and the light conversion efficiency is increased by 6%.
Example 4
The embodiment provides a method for a quantum dot LED device of a semi-cured substrate, which comprises the following steps:
basically the same as example 1, except that 15mg of CdSe/ZnS core/shell structure quantum dots (emission peak wavelength at 525nm) were added in step (1), and the other conditions were not changed.
Compared with the traditional PDMS full-curing packaging device, the luminous flux of the quantum dot LED device of the semi-cured base material is increased by 8lm, the light radiation flux of a chip is increased by 18mW, the light radiation flux of the quantum dot is increased by 15mW, and the light conversion efficiency is increased by 7%.
Synthesize embodiment 1 to 4, the utility model discloses add liquid silicone oil in vinyl end capping PDMS's substrate, utilize the high viscosity of liquid silicone oil to provide good liquid dispersion environment for the quantum dot, form the solid-liquid mixed substrate. Compared with the traditional PDMS packaging form, the radiation flux and the luminous flux of the quantum dot LED device with the semi-cured base material prepared by the method are greatly improved.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way. Any equivalent changes, modifications or evolutions made by those skilled in the art to the above embodiments by using the technical solutions of the present invention still belong to the scope of the technical solutions of the present invention.
Claims (7)
1. A quantum dot LED device of a semi-cured base material is characterized by comprising a reflecting cup (2), a light emitting chip (1), a light conversion layer (3) and a hemispherical lens (4); the light reflecting cup (2) is provided with a groove, and the light emitting chip (1) is arranged in the groove; the hemispherical lens (4) is arranged on the upper surface of the light reflecting cup (2), the hemispherical lens (4) is provided with a concave surface, the concave surface is opposite to the groove of the light reflecting cup (2), and the hemispherical lens (4) and the light reflecting cup (2) form a closed structure; the groove is filled with a light conversion layer (3), and the light conversion layer (3) is formed by curing quantum dots, liquid silicone oil and PDMS.
2. The semi-cured substrate quantum dot LED device of claim 1, wherein the quantum dots comprise at least one of carbon quantum dots, CdSe quantum dots, perovskite quantum dots, CdSe/ZnS quantum dots.
3. The semi-cured substrate quantum dot LED device according to claim 1, wherein the PDMS is a vinyl terminated polydimethylsiloxane.
4. The semi-cured substrate quantum dot LED device according to claim 1, wherein the light emitting chip (1) is a blue light emitting chip and has an emission peak wavelength range of 430-470 nm.
5. The semi-cured substrate quantum dot LED device according to claim 4, wherein the blue light emitting chip has a size range of (22 x 22) to (40 x 40) mil and a thickness of 150 to 250 μm.
6. The semi-cured substrate quantum dot LED device according to claim 1, wherein the light reflecting cup (2) is a lumen-simulating device, and the groove structure is at least one of a parabolic shape, a conical shape, a trapezoidal shape and a spherical shape.
7. The semi-cured substrate quantum dot LED device according to claim 6, wherein the inner surface coating of the groove comprises at least one of a silver coating, a chromium coating, a nickel-silver coating and an aluminum coating, and the thickness of the inner surface coating is 0.3-0.5 μm.
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| CN201920656521.0U CN210429865U (en) | 2019-05-08 | 2019-05-08 | Quantum dot LED device of semi-cured substrate |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110165037A (en) * | 2019-05-08 | 2019-08-23 | 华南理工大学 | A kind of quantum dot LED component of semi-solid preparation substrate and preparation method thereof |
| CN112083520A (en) * | 2020-09-26 | 2020-12-15 | 南通惟怡新材料科技有限公司 | Quantum dot lens, backlight module, display device and quantum dot lens manufacturing method |
| CN113861983A (en) * | 2021-09-26 | 2021-12-31 | 广州华商职业学院 | Preparation method and application of high-luminous-dose quantum-dot light conversion coating |
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2019
- 2019-05-08 CN CN201920656521.0U patent/CN210429865U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110165037A (en) * | 2019-05-08 | 2019-08-23 | 华南理工大学 | A kind of quantum dot LED component of semi-solid preparation substrate and preparation method thereof |
| CN112083520A (en) * | 2020-09-26 | 2020-12-15 | 南通惟怡新材料科技有限公司 | Quantum dot lens, backlight module, display device and quantum dot lens manufacturing method |
| US11822098B2 (en) | 2020-09-26 | 2023-11-21 | Nantong Veeyee New Material Technology Co., Ltd | Quantum dot lens, backlight module, display device and manufacturing method of quantum dot lens |
| CN113861983A (en) * | 2021-09-26 | 2021-12-31 | 广州华商职业学院 | Preparation method and application of high-luminous-dose quantum-dot light conversion coating |
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