CN110165037A - A kind of quantum dot LED component of semi-solid preparation substrate and preparation method thereof - Google Patents
A kind of quantum dot LED component of semi-solid preparation substrate and preparation method thereof Download PDFInfo
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- CN110165037A CN110165037A CN201910380346.1A CN201910380346A CN110165037A CN 110165037 A CN110165037 A CN 110165037A CN 201910380346 A CN201910380346 A CN 201910380346A CN 110165037 A CN110165037 A CN 110165037A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 95
- 238000002360 preparation method Methods 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 title claims abstract description 39
- 239000007787 solid Substances 0.000 title claims abstract description 36
- 239000007788 liquid Substances 0.000 claims abstract description 34
- 239000004205 dimethyl polysiloxane Substances 0.000 claims abstract description 32
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims abstract description 32
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 32
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims abstract description 31
- 229920002545 silicone oil Polymers 0.000 claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 238000004020 luminiscence type Methods 0.000 claims abstract description 13
- 238000010276 construction Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 24
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 20
- 239000003292 glue Substances 0.000 claims description 13
- 239000000084 colloidal system Substances 0.000 claims description 9
- 230000000903 blocking effect Effects 0.000 claims description 8
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 8
- 238000005266 casting Methods 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000007711 solidification Methods 0.000 claims description 7
- 230000008023 solidification Effects 0.000 claims description 7
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 6
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 238000007667 floating Methods 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- UIFOTCALDQIDTI-UHFFFAOYSA-N arsanylidynenickel Chemical compound [As]#[Ni] UIFOTCALDQIDTI-UHFFFAOYSA-N 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 238000005259 measurement Methods 0.000 claims 1
- 238000005303 weighing Methods 0.000 claims 1
- 230000004907 flux Effects 0.000 abstract description 14
- 230000005855 radiation Effects 0.000 abstract description 7
- 238000012856 packing Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000010411 cooking Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- -1 polydimethylsiloxane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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Abstract
The present invention provides quantum dot LED components of a kind of semi-solid preparation substrate and preparation method thereof.The quantum dot LED component, including luminescence chip, reflector, light conversion layer, hemispherical lens；The reflector band is fluted, and luminescence chip is set in groove；The upper surface of reflector is arranged in the hemispherical lens, and the concave surface of the hemispherical lens and the groove of reflector are opposite, the hemispherical lens and reflecting cup-shaped at an enclosed construction；Light conversion layer is filled in the enclosed construction, for the light conversion layer by solidifying including quantum dot, liquid silicone oil, PDMS, substrate uses solid-liquid mixed form, macroscopically has solid-state stereotyped structure, stability is good, and actual production is facilitated to use；It is microcosmic upper with Liquid Structure, good decentralized environment is provided for quantum dot, compared with traditional all solidstate packing forms, radiation flux and luminous flux obtain biggish promotion.
Description
Technical field
The present invention relates to the packaging technology of the quantum dot light conversion devices of luminescence generated by light more particularly to a kind of semi-solid preparation substrates
Quantum dot LED component and preparation method thereof.
Technical background
In recent years, since quantum dot has the photochromic and high quantum effect of the relevant adjustable excitation peak wavelength of size, saturation
The good characteristics such as rate and the extensive concern by scholar, compared to conventional fluorescent powder, the size of quantum dot nano-particle is much smaller than
Optical wavelength largely eliminates the scattering loss in luminescence process, is applied to the numerous areas such as light emitting diode (LED).
In LED component preparation process, the LED component of gluing process manufacture occupies quite a few.In LED component dispensing
In technique, quantum dot colloid is needed to configure.And when preparing quantum dispensing body, due between solute interaction, solute with
Interaction, gravity between solvent etc., quantum dot is easy to happen reunion and sedimentation.Under the situation that quantum dot is reunited,
It is mutually blocked between quantum dot, so that part quantum dot is difficult to absorb the blue light of chip sending.In addition, the fluorescent emission of quantum dot
There is competition between light absorption.The absorption spectrum wave-length coverage of quantum dot is wide, exists with luminescent spectrum and partly overlaps, it is meant that
Quantum dot can absorb mutually part exciting light.Therefore, the reunion of quantum dot also results in the loss of exciting light.The concentration of quantum dot
Higher, then reuniting effect is more obvious.After quantum dot concentration increase to a certain extent, phototransformation efficiency is no longer linearly improved, very
To reduction, the concentration quenching of quantum dot has occurred.Therefore improving dispersibility of the quantum dot in LED packaging plastic can be such that light converts
More sufficiently, so as to improve the Photochromic Properties of quantum dot LED.
To improve dispersibility of the quantum dot in traditional PDMS solid encapsulation substrate, silicon can be added in PDMS packaging plastic
Oil, microcosmic upper construction liquid environment, liquid PDMS provide more flexible environment for quantum dot surface ligand, reduce and solidified
Chemical bonding makes ligand be detached from quantum dot surface in journey, reduces surface defect, the liquid being packaged using liquid silicone oil
Silicone oil, which encapsulates LED, has higher stability and out optical property.
Summary of the invention
The present invention proposes a kind of semi-solid preparation for the dispersion problem of quantum dot in all solid state packaging of tradition PDMS
Quantum dot LED component of substrate and preparation method thereof.Liquid silicone oil is added in this method in traditional PDMS solid encapsulation substrate,
Good liquid dispersed environment is provided for quantum dot using the high viscosity of liquid silicone oil, solid-liquid hybrid substrate is formed, with luminous core
The quantum dot LED component of semi-solid preparation substrate is made in piece (chip), reflector, lens etc., while retaining PDMS encapsulation advantage,
It can use the Photochromic Properties of liquid silicone oil lifting capacity sub- point again.Since preparation process is simple, cost is relatively low, is suitable for extensive
It produces and uses.
The purpose of the present invention is achieved through the following technical solutions.
The present invention provides a kind of quantum dot LED components of semi-solid preparation substrate, including reflector, luminescence chip, light to convert
Layer, hemispherical lens；The reflector band is fluted, and luminescence chip is arranged in groove；The hemispherical lens is arranged anti-
The upper surface of light cup, hemispherical lens have concave surface, and the concave surface is opposite with the groove of reflector, hemispherical lens and reflector
Form an enclosed construction；Light conversion layer is filled in groove, the light conversion layer is solidified by quantum dot, liquid silicone oil, PDMS
It forms.
The present invention also provides a kind of method of quantum dot LED component for preparing the semi-solid preparation substrate, including it is as follows
Step:
1) quantum dot is weighed, chloroform is added, the mass volume ratio of the quantum dot and chloroform is 1~10mg/ml, 25~
Quantum dot is dissolved in chloroform at a temperature of 50 DEG C, and quantum dot chloroformic solution is made；
2) liquid silicone oil, PDMS, curing agent are sequentially added to the resulting quantum dot chloroformic solution of step 1), the PDMS with
The mass ratio of curing agent is 5:1~10:1, and the ratio that the quality of liquid silicone oil accounts for both liquid silicone oil and PDMS gross mass is x,
In 0 x≤0.85 <, the quality of the quantum dot and the mass ratio of the mixture in liquid silicone oil, PDMS and curing agent three are
Y, wherein 0 y≤0.03 <, stirring is volatilized completely to chloroform, and quantum dot is made to be dispersed in colloid；
3) by the colloid in step 2) using vacuum stirring deaeration machine deaeration, so that residual bubbles floating rupture in colloid,；
4) quantum dispensing is instilled into the reflector for be equipped with luminescence chip, then baking-curing, light conversion layer is completed in filling；
5) hemispherical lens is finally covered, casting glue is injected, excludes residual air, baking-curing, quantum dot LED component system
It is standby to complete.
Preferably, the quantum dot includes carbon quantum dot, CdSe quantum dot, perovskite quantum dot, CdSe/ZnS quantum dot
At least one of, the liquid silicone oil is the dimethyl silicone polymer of methyl blocking, and range of viscosities is 500~5000m2/s。
Preferably, the PDMS is the dimethyl silicone polymer of ethenyl blocking.
Preferably, in step 2), the temperature of stirring is 25~50 DEG C, and mixing time is 40~60min.
Preferably, in step 3), at a temperature of 25~50 DEG C, using be stirred under vacuum the deaeration of deaeration machine, inclined heated plate be 5~
10min。
Preferably, luminescence chip is blue light emitting chip, and emission peak wave-length coverage is 430~470nm, the blue light emitting
The size range of chip is (22 × 22)~(40 × 40) mil, with a thickness of 150~250 μm.
Preferably, reflector is imitative lumen device, the structure of the groove be parabolic shape, circular conical surface type, trapezoidal faces type,
At least one of spherical, the coating on inner surface of groove include silvering, chrome plating, nickel coating, nickeline coating, in aluminium coat
At least one, coating on inner surface is with a thickness of 0.3~0.5 μm.
Preferably, in the step 4), at a temperature of 25~50 DEG C, quantum dispensing, the quantum solidification for dispensing glue are instilled
Temperature is 120~135 DEG C, and curing time is 90~110min.
Preferably, it in the step 5), at a temperature of 25~50 DEG C, covers hemispherical lens (4), injects casting glue, row
Residual air out, casting glue used are the high-power baking glue M-2815 of encapsulating, the solidification temperature of the casting glue for 115~
130 DEG C, curing time is 15~30min.
Compared with prior art, the invention has the advantages that and advantage:
(1) liquid silicone oil is introduced as flexible protective matrix, to reduce the vinyl and amount of PDMS in PDMS solidification process
Quantum dot surface defect caused by addition reaction occurs for the OA on son point surface.
(2) liquid silicone oil is added in the present invention in the substrate of ethenyl blocking PDMS, and the high viscosity using liquid silicone oil is
Quantum dot provides good liquid dispersed environment, forms solid-liquid hybrid substrate.The quantum of the semi-solid preparation substrate of the method preparation
Point LED component, compared with traditional PDMS packing forms, radiation flux and luminous flux all obtain larger promotion.
(3) semi-solid preparation packaging method has both the advantage of liquid packaging method He tradition PDMS packaging method, is keeping quantum
Have many advantages, such as easily fabricated, preservation, high-volume continuous production that can be convenient, flexible while point LED light color performance boost.
Detailed description of the invention
Fig. 1 is the structure chart of the quantum dot LED component for the semi-solid preparation substrate that embodiment 1 provides；
Fig. 2 is the preparation flow figure of the quantum dot LED component for the semi-solid preparation substrate that embodiment 1 provides；
Wherein 1- luminescence chip；2- reflector；3- light conversion layer；4- hemispherical lens.
Specific embodiment
Technical solution in order to enable those skilled in the art to better understand the present invention, below with regard to specific embodiment to this hair
It is bright to be described in further detail.
Embodiment 1
A kind of quantum dot LED component of semi-solid preparation substrate is present embodiments provided, as shown in Figure 1, including reflector 2, hair
Optical chip 1, light conversion layer 3, hemispherical lens 4；With fluted, luminescence chip 1 is arranged in groove the reflector 2；It is described
The upper surface of reflector 2 is arranged in hemispherical lens 4, and hemispherical lens 4 has concave surface, the groove of the concave surface and reflector 2
Relatively, hemispherical lens 4 and reflector 2 form an enclosed construction；Light conversion layer 3 is filled in groove.
The present embodiment additionally provides the preparation method of the quantum dot LED component, and the method is as shown in Fig. 2, include such as
Lower step:
(1) 2mg CdSe/ZnS core/shell structure quantum dot (emission peak wavelength is located near 525nm) is dissolved in 1.5mL
In chloroform, quantum dot chloroformic solution is obtained；
(2) it is 500m that 1700mg viscosity is added in Xiang Shangshu quantum dot chloroformic solution2The liquid silicone oil of/s, methyl blocking
Dimethyl silicone polymer, polydimethylsiloxane and its curing agent (the PDMS Sylgard 184 of 300mg ethenyl blocking
Silica gel agent) (its ratio be 10:1), in vent cabinet at a temperature of 25 DEG C, 50min is stirred with centrifugal blender, fills chloroform
Divide volatilization, and is sufficiently mixed colloid uniformly；
(3) in vent cabinet, using deaeration machine deaeration 5min is stirred under vacuum at 25 DEG C, so that bubble floating is broken in colloid
It splits, obtains quantum dispensing；
(4) the i.e. imitative stream in the reflector 2 that groove is built-in with blue-ray LED (emission peak wavelength is located near 455nm) chip
Funerary objects part instills quantum dispensing, and wherein the coating on inner surface of groove structure is silvering, and coating layer thickness is 0.4 μm.
(5) reflector 2 after injection quantum dispensing is put into oven cooking cycle solidification, baking temperature is set as 125 DEG C, baking
Time is 90min；
(6) hemispherical lens 4 that diameter is 5mm is covered, is then injected into encapsulating with high-power baking glue M-2815 imitative
Lumen device, and residual air is discharged；
(7) device is put into oven cooking cycle again, temperature setting is 120 DEG C, baking time 15min, and it is solid that half is obtained after coming out of the stove
Change substrate quantum dot LED component.
Compared with traditional PDMS all solidstate packaging, the light of the quantum dot LED component of semi-solid preparation substrate obtained is logical
Amount improves 5lm, and chip light radiant flux improves 30mW, quantum dot light radiation flux 10mW, and phototransformation efficiency improves
4%.
Embodiment 2
The method for present embodiments providing a kind of quantum dot LED component of semi-solid preparation substrate, includes the following steps:
It is substantially the same manner as Example 1, it is a difference in that in step (1) and 6mg CdSe/ZnS core/shell structure quantum dot is added
(emission peak wavelength is located at 525nm), other conditions are constant.
Compared with traditional PDMS all solidstate packaging, the light of the quantum dot LED component of semi-solid preparation substrate obtained is logical
Amount improves 7lm, and chip light radiant flux improves 27mW, quantum dot light radiation flux 11mW, and phototransformation efficiency improves
6%.
Embodiment 3
The method for present embodiments providing a kind of quantum dot LED component of semi-solid preparation substrate, includes the following steps:
It is substantially the same manner as Example 1, it is a difference in that in step (1) and 10mg CdSe/ZnS core/shell structure quantum dot is added
(emission peak wavelength is located at 525nm), other conditions are constant.
Compared with traditional PDMS all solidstate packaging, the light of the quantum dot LED component of semi-solid preparation substrate obtained is logical
Amount improves 11lm, and chip light radiant flux improves 14mW, quantum dot light radiation flux 13mW, and phototransformation efficiency improves
6%.
Embodiment 4
The method for present embodiments providing a kind of quantum dot LED component of semi-solid preparation substrate, includes the following steps:
It is substantially the same manner as Example 1, it is a difference in that in step (1) and 15mg CdSe/ZnS core/shell structure quantum dot is added
(emission peak wavelength is located at 525nm), other conditions are constant.
Compared with traditional PDMS all solidstate packaging, the light of the quantum dot LED component of semi-solid preparation substrate obtained is logical
Amount improves 8lm, and chip light radiant flux improves 18mW, quantum dot light radiation flux 15mW, and phototransformation efficiency improves
7%.
Liquid silicone oil is added in the substrate of ethenyl blocking PDMS, utilizes liquid-state silicon by integrated embodiment 1 to 4, the present invention
The high viscosity of oil provides good liquid dispersed environment for quantum dot, forms solid-liquid hybrid substrate.The half of the method preparation is solid
Change the quantum dot LED component of substrate, compared with traditional PDMS packing forms, radiation flux and luminous flux all obtain larger mention
It rises.
The foregoing is only a preferred embodiment of the present invention, not does restriction in any form to the present invention.It is all
Any equivalent variation that those skilled in the art makes above-described embodiment using technical solution of the present invention is modified or is drilled
Become etc., all of which are still within the scope of the technical scheme of the invention.
Claims (10)
1. a kind of quantum dot LED component of semi-solid preparation substrate, which is characterized in that turn including reflector (2), luminescence chip (1), light
Change layer (3), hemispherical lens (4)；With fluted, luminescence chip (1) is arranged in groove the reflector (2)；The hemisphere
In the upper surface of reflector (2), hemispherical lens (4) has a concave surface for shape lens (4) setting, the concave surface and reflector (2)
Groove is opposite, and hemispherical lens (4) and reflector (2) form an enclosed construction；Light conversion layer (3) are filled in groove, institute
Light conversion layer (3) is stated to be solidified by quantum dot, liquid silicone oil, PDMS.
2. the method for preparing the quantum dot LED component of semi-solid preparation substrate described in claim 1, which is characterized in that including as follows
Step:
1) mass volume ratio of weighing quantum dot, measurement chloroform, the quantum dot and chloroform is 1 ~ 10 mg/ml, at 25 ~ 50 DEG C
At a temperature of quantum dot is dissolved in chloroform, quantum dot chloroformic solution is made；
2) liquid silicone oil, PDMS, curing agent are sequentially added to the resulting quantum dot chloroformic solution of step 1), the PDMS and solid
The mass ratio of agent is 5:1 ~ 10:1, and the ratio that the quality of liquid silicone oil accounts for both liquid silicone oil and PDMS gross mass is x, wherein 0
X≤0.85 <, the quality of the quantum dot and the mass ratio of liquid silicone oil, PDMS and curing agent three's mixture are y, wherein 0
Y≤0.03 <, stirring is volatilized completely to chloroform, and quantum dot is made to be dispersed in colloid；
3) by the colloid deaeration in step 2, so that residual bubbles floating rupture in colloid；
4) to instillation quantum dispensing in the reflector (2) of luminescence chip (1) is equipped with, then light conversion is completed in baking-curing, filling
Layer (3)；
5) it finally covers hemispherical lens (4), injects casting glue, exclude residual air, baking-curing, quantum dot LED component system
It is standby to complete.
3. the method for the quantum dot LED component according to claim 2 for preparing semi-solid preparation substrate, which is characterized in that described
Quantum dot includes at least one of carbon quantum dot, CdSe quantum dot, perovskite quantum dot, CdSe/ZnS quantum dot, the liquid
State silicone oil is the dimethyl silicone polymer of methyl blocking, and range of viscosities is 500 ~ 5000m2/s。
4. the method for the quantum dot LED component according to claim 2 for preparing semi-solid preparation substrate, which is characterized in that described
PDMS is the dimethyl silicone polymer of ethenyl blocking.
5. the method for the quantum dot LED component according to claim 2 for preparing semi-solid preparation substrate, which is characterized in that step
2) in, whipping temp is 25 ~ 50 DEG C, and mixing time is 40 ~ 60 min.
6. the method for the quantum dot LED component according to claim 2 for preparing semi-solid preparation substrate, which is characterized in that step
3) in, at a temperature of 25 ~ 50 DEG C, using the deaeration of deaeration machine is stirred under vacuum, inclined heated plate is 5 ~ 10min.
7. the method for the quantum dot LED component according to claim 2 for preparing semi-solid preparation substrate, which is characterized in that shine
Chip (1) is blue light emitting chip, and emission peak wave-length coverage is 430 ~ 470 nm, the size range of the blue light emitting chip
For (22 × 22) ~ (40 × 40) mil, with a thickness of 150 ~ 250 μm.
8. the method for the quantum dot LED component according to claim 2 for preparing semi-solid preparation substrate, which is characterized in that reflective
Cup (2) is imitative lumen device, and the structure of the groove is parabolic shape, circular conical surface type, trapezoidal faces type, at least one in spherical
Kind, the coating on inner surface of groove includes at least one of silvering, chrome plating, nickel coating, nickeline coating, aluminium coat, interior table
Finishing coat is with a thickness of 0.3 ~ 0.5 μm.
9. the method for the quantum dot LED component according to claim 2 for preparing semi-solid preparation substrate, which is characterized in that described
In step 4), at a temperature of 25 ~ 50 DEG C, quantum dispensing is instilled, the quantum solidification temperature for dispensing glue is 120 ~ 135 DEG C, solidification
Time is 90 ~ 110 min.
10. the method for the quantum dot LED component according to claim 2 for preparing semi-solid preparation substrate, which is characterized in that described
It in step 5), at a temperature of 25 ~ 50 DEG C, covers hemispherical lens (4), injects casting glue, residual air, casting glue used is discharged
It is encapsulating with high-power baking glue M-2815, the solidification temperature of casting glue is 115 ~ 130 DEG C, and curing time is 15 ~ 30min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910380346.1A CN110165037B (en) | 2019-05-08 | 2019-05-08 | Quantum dot LED device with semi-cured substrate and preparation method thereof |
Applications Claiming Priority (1)
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