CN210420167U

CN210420167U - Beryllium oxide ceramic film metallization structure and preparation device thereof

Info

Publication number: CN210420167U
Application number: CN201920995058.2U
Authority: CN
Inventors: 唐兴友; 尚华
Original assignee: Yibin Redstar Electronics Co ltd
Current assignee: Yibin Redstar Electronics Co ltd
Priority date: 2019-06-28
Filing date: 2019-06-28
Publication date: 2020-04-28
Anticipated expiration: 2029-06-28

Abstract

The utility model discloses a beryllium oxide ceramic film metallization structure and preparation facilities thereof of electron function ceramic material technical field, beryllium oxide ceramic film metallization structure include beryllium oxide ceramic base member and the metal level that is located its surface, the metal level includes the three-layer, is titanium membrane, copper film and copper layer from inside to outside in proper order, and preparation facilities removes between each process position in proper order through artifical and the supplementary centre gripping of manipulator including the washing section, stoving case, magnetron sputtering coating device and the plating bath that are the assembly line and arrange in proper order, beryllium oxide ceramic base member. The utility model has the advantages that: compared with the traditional metal powder sintering method, the titanium film, the copper film and the copper layer composite metal layer manufactured by coating can realize the uniformity of metallization by using less materials, the tensile strength is higher, the structure is more stable, the method reduces the overlong sintering process period, the time is reduced by 70 percent compared with the traditional metal powder sintering method, and the efficiency and the product quality are greatly improved.

Description

Beryllium oxide ceramic film metallization structure and preparation device thereof

Technical Field

The utility model relates to an electronic function ceramic material technical field especially relates to a beryllium oxide ceramic film metallization structure and preparation facilities thereof.

Background

The beryllium oxide ceramic has the characteristics of high melting point, high strength, high thermal conductivity, high insulativity, low dielectric constant, low dielectric loss, good process adaptability and the like. The ceramic material is widely applied to microwave electric vacuum, micro-electronics and photoelectric devices, and is an important ceramic material for manufacturing high-heat-conductivity components and parts in particular to high-power ICs, HICs, semiconductor devices, high-power microwaves, photoelectric devices and electric vacuum devices. In practical applications, the beryllium oxide ceramic and the metal are required to be welded, so that the beryllium oxide ceramic is required to be metalized.

The most common method for metallizing beryllium oxide ceramics is the sintered metal powder method. The method comprises the steps of coating a layer of metal slurry on the surface of beryllium oxide ceramic, then sintering in a reducing atmosphere to form a firm metal bonding layer on the beryllium oxide ceramic, and then completing metallization of the surface of the ceramic by nickel plating to be welded with a metal piece. The sintered metal powder method has the defects of long process period, poor process stability, low pattern accuracy and the like in the processes of slurry preparation, printing, sintering and the like, and the metalized surface roughness is large, so that the requirements of high-quality products cannot be met. More importantly, the conductive capability of the sintered metallization layer is far from that of the pure metallization layer. In the subsequent nickel plating process, the deposition and the performance of the plating layer can be influenced, and the welding capacity is influenced.

SUMMERY OF THE UTILITY MODEL

In order to overcome the defects of the prior beryllium oxide ceramic metallization structure, the utility model aims to solve the technical problems that: the beryllium oxide ceramic film metalized structure and the preparation device thereof are more stable in structure and higher in preparation efficiency.

The utility model provides a technical scheme that its technical problem adopted is:

the beryllium oxide ceramic thin film metallization structure comprises a beryllium oxide ceramic base body and a metal layer positioned on the surface of the beryllium oxide ceramic base body, wherein the metal layer comprises three layers, namely a titanium film, a copper film and a copper layer from inside to outside in sequence.

Further, the thickness of the titanium film and the thickness of the copper film are both 100-200 nm, and the overall tensile strength of the titanium film and the copper film is not less than 12 MPa.

Furthermore, the thickness of the copper layer is 30-40 mu m, and the tensile strength is not less than 45 MPa.

Furthermore, the beryllium oxide ceramic substrate is clamped by manpower and a manipulator to move between the working procedure parts in sequence.

Further, the cleaning section comprises an ultrasonic water cleaning tank, a chemical solvent cleaning tank, a hot water tank, an ultrasonic pure water tank, a pure water tank, an ethanol tank and an ultrasonic acetone tank which are sequentially arranged.

The utility model has the advantages that: compared with the traditional metal powder sintering method, the titanium film, the copper film and the copper layer composite metal layer manufactured by coating can realize the uniformity of metallization by using less materials, the tensile strength is higher, the structure is more stable, the method reduces the overlong sintering process period, the time is reduced by 70 percent compared with the traditional metal powder sintering method, and the efficiency and the product quality are greatly improved.

Drawings

Fig. 1 is a schematic diagram of a beryllium oxide ceramic film metallization structure.

Fig. 2 is a schematic diagram of a beryllium oxide ceramic film metallized structure preparation device.

Marked in the figure as 1-beryllium oxide ceramic matrix, 2-titanium film, 3-copper film, 4-copper layer, 5-cleaning section, 6-drying box, 7-magnetron sputtering coating device, 8-electroplating bath, 51-ultrasonic water cleaning tank, 52-chemical solvent cleaning tank, 53-hot water tank, 54-ultrasonic pure water tank, 55-pure water tank, 56-ethanol tank and 57-ultrasonic acetone tank.

Detailed Description

The present invention will be further explained with reference to the accompanying drawings.

As shown in fig. 1, the beryllium oxide ceramic thin film metallization structure of the present invention includes a beryllium oxide ceramic substrate 1 and a metal layer on the surface thereof, wherein the metal layer includes three layers, and the three layers are a titanium film 2, a copper film 3 and a copper layer 4 from inside to outside in sequence. The titanium film 2 and the copper film 3 are coated in a magnetron sputtering mode, so that the uniform coating without dead angles of 360 degrees can be ensured, the nonuniformity is less than or equal to +/-5%, and compared with the traditional metal powder sintering method, the metallization is more uniform. In addition, the junction strength of the titanium film 2 and the copper film 3 is high, high tensile strength can be obtained by adopting few materials, and the requirements of thick and thin-film circuits, photoelectric devices (infrared detection and imaging), high-power semiconductor devices and laser devices on metallized beryllium oxide ceramic products can be met.

Because titanium is a precious metal, in order to save materials, according to a large number of test summaries, when the thicknesses of the titanium film 2 and the copper film 3 are both 100-200 nm, the tensile strength of the whole titanium film 2 and the whole copper film 3 can be not less than 12MPa, most use requirements are met, and the scheme is high in cost performance.

Further, the thickness of the copper layer 4 is 30-40 μm, the tensile strength is not less than 45MPa, the thickness of the copper layer 4 is required to meet the stability of a welding structure on one hand, and the subsequent requirements of ultraviolet lithography and etching on the other hand, and the cost is combined, and 30-40 μm is a preferable scheme.

The preparation device for manufacturing the beryllium oxide ceramic film metalized structure comprises a cleaning section 5, a drying box 6, a magnetron sputtering coating device 7 and a plating bath 8 which are sequentially arranged in a production line as shown in figure 2, wherein the beryllium oxide ceramic substrate 1 is manually and mechanically assisted to be clamped between the working procedure parts and sequentially moves. The cleaning section 5 comprises an ultrasonic water cleaning tank 51, a chemical solvent cleaning tank 52, a hot water tank 53, an ultrasonic pure water tank 54, a pure water tank 55, an ethanol tank 56 and an ultrasonic acetone tank 57 which are sequentially arranged.

The technical process for producing by adopting the device is as follows:

1. the cleaning process comprises the steps of firstly, cleaning the beryllium oxide ceramic substrate in an ultrasonic water cleaning tank, then, cleaning the beryllium oxide ceramic substrate in a chemical solvent cleaning tank, adding a chemical degreasing agent, strongly stirring and cleaning, taking out the beryllium oxide ceramic substrate, cleaning the beryllium oxide ceramic substrate in a hot water tank by using water with the temperature of over 75 ℃, sequentially cleaning the beryllium oxide ceramic substrate in an ultrasonic pure water tank and rinsing the beryllium oxide ceramic substrate in a pure water tank, soaking and cleaning the beryllium oxide ceramic substrate in an absolute ethyl alcohol tank, removing water, and finally cleaning the beryllium oxide ceramic substrate;

2. drying, namely putting the treated beryllium oxide ceramic substrate into a drying oven for drying for later use;

3. performing magnetron sputtering coating, namely performing magnetron sputtering coating on the treated beryllium oxide ceramic substrate, setting reasonable process parameters, firstly coating a titanium film, coating a copper film after the thickness reaches a preset thickness, and finishing coating after the preset requirement is met;

4. and (4) electroplating copper, namely preparing an electroplating solution and carrying out electrolytic impurity removal. Then the conductive clip is used to clamp the coated plane to connect the wire. And then activating in a dilute hydrochloric acid solution, washing with pure water, and carrying out a charged tank to finish the electroplating of the copper layer.

The utility model discloses more traditional sintered metal powder method, through titanium membrane, copper film and the copper layer composite metal layer of coating film preparation, only need less material just can realize the homogeneity of metallization, and tensile strength is higher, and the structure is more stable to this method has reduced the overlength technology cycle of sintering, has reduced 70% time than traditional sintered metal powder method, raises the efficiency greatly and product quality, has fine practicality and application prospect.

Claims

1. The beryllium oxide ceramic thin film metallization structure comprises a beryllium oxide ceramic base body (1) and a metal layer positioned on the surface of the beryllium oxide ceramic base body, and is characterized in that: the metal level includes the three-layer, is titanium membrane (2), copper film (3) and copper layer (4) from inside to outside in proper order, the thickness of titanium membrane (2) and copper film (3) is 100 ~ 200nm, and the holistic tensile strength of titanium membrane (2) and copper film (3) is not less than 12MPa, the thickness of copper layer (4) is 30 ~ 40 mu m, and tensile strength is not less than 45 MPa.

2. The apparatus of claim 1, wherein the apparatus comprises: the beryllium oxide ceramic substrate cleaning device comprises a cleaning section (5), a drying box (6), a magnetron sputtering coating device (7) and a plating bath (8) which are sequentially arranged in an assembly line, wherein the beryllium oxide ceramic substrate is manually and mechanically assisted to move between the working procedure parts in sequence.

3. The apparatus of claim 2, wherein: the cleaning section (5) comprises an ultrasonic water cleaning tank (51), a chemical solvent cleaning tank (52), a hot water tank (53), an ultrasonic pure water tank (54), a pure water tank (55), an ethanol tank (56) and an ultrasonic acetone tank (57) which are sequentially arranged.