CN111302834B - Microwave magnetron insulating ceramic ring - Google Patents
Microwave magnetron insulating ceramic ring Download PDFInfo
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- CN111302834B CN111302834B CN202010293472.6A CN202010293472A CN111302834B CN 111302834 B CN111302834 B CN 111302834B CN 202010293472 A CN202010293472 A CN 202010293472A CN 111302834 B CN111302834 B CN 111302834B
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- ICAKDTKJOYSXGC-UHFFFAOYSA-K lanthanum(iii) chloride Chemical compound Cl[La](Cl)Cl ICAKDTKJOYSXGC-UHFFFAOYSA-K 0.000 claims description 15
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 14
- VYLVYHXQOHJDJL-UHFFFAOYSA-K cerium trichloride Chemical compound Cl[Ce](Cl)Cl VYLVYHXQOHJDJL-UHFFFAOYSA-K 0.000 claims description 14
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- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims 1
- 206010014357 Electric shock Diseases 0.000 claims 1
- 239000004902 Softening Agent Substances 0.000 claims 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 claims 1
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- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
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- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/88—Metals
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
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- Engineering & Computer Science (AREA)
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Abstract
本发明提出了一种微波磁控管绝缘陶瓷环,包括环形陶瓷基体和环形陶瓷基体两端的金属化层;所述金属化层的加工方法包括以下步骤:S1.助镀剂的配置;S2.高纯铝块、高纯铜块的处理;S3.预处理:将环形陶瓷基体浸泡在热助镀剂中浸泡10‑20min后取出,备用;S4.单面热浸镀铝、铜合金;S5.双面热浸镀铝、铜合金;S6.侧壁清洗;S7.电镀镍层;S8.侧壁再次清洗。本发明采用热浸镀铝铜合金与陶瓷晶相颗粒合理匹配技术,使金属化铝铜合金层在烧结时能与陶瓷体形成紧密结合,然后再在金属化铝铜合金层上电镀一层金属化镍层,从而大大提高了陶瓷金属化层的表面质量和抗拉强度,延长了磁控管的使用寿命。
The invention provides a microwave magnetron insulating ceramic ring, which includes an annular ceramic base and metallized layers at both ends of the annular ceramic base; the processing method of the metallized layer includes the following steps: S1. The configuration of the plating agent; S2. Treatment of high-purity aluminum blocks and high-purity copper blocks; S3. Pretreatment: soak the annular ceramic substrate in hot-dip flux for 10-20 minutes, then take it out for use; S4. Hot-dip aluminum and copper alloys on one side; S5 . Double-sided hot-dip aluminum and copper alloys; S6. Sidewall cleaning; S7. Electroplating nickel layer; S8. Sidewall cleaning again. The invention adopts the reasonable matching technology of hot-dip aluminum-copper alloy and ceramic crystal phase particles, so that the metallized aluminum-copper alloy layer can be closely combined with the ceramic body during sintering, and then a layer of metal is electroplated on the metallized aluminum-copper alloy layer. Therefore, the surface quality and tensile strength of the ceramic metallization layer are greatly improved, and the service life of the magnetron is prolonged.
Description
技术领域technical field
本发明涉及材料制造技术领域,具体涉及一种微波磁控管绝缘陶瓷环。The invention relates to the technical field of material manufacturing, in particular to a microwave magnetron insulating ceramic ring.
背景技术Background technique
磁控管的特点是输出的功率大,效率高,工作电压低(相对于线形注微波管来说),体积小,重量轻,成本低。随着科技的发展,磁控管被广泛应用于电子、电力、化工等领域,作为其核心部件之一的金属化陶瓷的需求量呈逐年增长的趋势。目前,在陶瓷金属化的过程中,由于金属化粉料粒度的过细,表面能增大,粉末不易分散,影响了金属化层的平整性、一致性。而金属化粉料粒度过大,表面能降低,烧结温度提高,影响了既定温度下的烧结质量,对于金属化层与陶瓷层的结合造成不利影响。另外,现有磁控管陶瓷的壁厚一般为1.65mm,常常会出现由于磁控管内磁场产生电流过大致使陶瓷壁被击穿或产生裂痕的现象发生,影响磁控管的使用寿命。The magnetron is characterized by high output power, high efficiency, low operating voltage (compared to linear injection microwave tubes), small size, light weight and low cost. With the development of science and technology, magnetrons are widely used in electronics, electric power, chemical industry and other fields, and the demand for metallized ceramics as one of its core components is increasing year by year. At present, in the process of ceramic metallization, because the particle size of the metallized powder is too fine, the surface energy increases, and the powder is not easily dispersed, which affects the flatness and consistency of the metallized layer. However, if the particle size of the metallized powder is too large, the surface energy is reduced, and the sintering temperature is increased, which affects the sintering quality at a given temperature and adversely affects the combination of the metallized layer and the ceramic layer. In addition, the wall thickness of the existing magnetron ceramics is generally 1.65mm, and the ceramic wall is often broken down or cracked due to excessive current generated by the magnetic field in the magnetron, which affects the service life of the magnetron.
传统的微波磁控管绝缘陶瓷环主要有真空蒸发镀膜法、真空溅射镀膜法、Mo-Mn烧结法等,然而,因液态金属在陶瓷表面的润湿角较大,不易对陶瓷形成有效润湿。具体表现为:①陶瓷内部是离子键、共价键及二者的混合所组成,金属则是由金属键所构成。二者之间难以发生反应,导致金属难以在陶瓷表面形成有效润湿。②金属不易在陶瓷表面进行有效扩散,二者难以固溶。③二者的热膨胀系数及导热率相差过大,导致金属化的过程中,二者的结合面往往存在着较大的残余应力。因此,直接将二者进行有效结合颇为困难,这些方法都不能使陶瓷的孔壁上获得均匀的金属化镀层。Traditional microwave magnetron insulating ceramic rings mainly include vacuum evaporation coating method, vacuum sputtering coating method, Mo-Mn sintering method, etc. However, due to the large wetting angle of liquid metal on the ceramic surface, it is not easy to form effective wetting on ceramics. wet. The specific performance is as follows: ①The interior of ceramics is composed of ionic bonds, covalent bonds and the mixture of the two, while metals are composed of metal bonds. The reaction between the two is difficult, making it difficult for the metal to form an effective wetting on the ceramic surface. ② The metal is not easy to diffuse effectively on the ceramic surface, and the two are difficult to solid solution. ③The difference between the thermal expansion coefficient and thermal conductivity of the two is too large, resulting in a large residual stress on the joint surface of the two in the process of metallization. Therefore, it is quite difficult to directly combine the two effectively, and none of these methods can obtain a uniform metallized coating on the pore wall of the ceramic.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于提出一种微波磁控管绝缘陶瓷环,在金属化铝铜合金层上电镀一层金属化镍层, 从而大大提高了陶瓷金属化层的表面质量和抗拉强度,且金属层均匀、细腻,同时有效提高陶瓷金属层的壁厚,避免由于磁控管内磁场产生电流过大致使陶瓷壁被击穿或产生裂痕的现象发生,延长了磁控管的使用寿命。The purpose of the present invention is to propose a microwave magnetron insulating ceramic ring, in which a metallized nickel layer is electroplated on the metallized aluminum-copper alloy layer, thereby greatly improving the surface quality and tensile strength of the ceramic metallized layer, and the metal The layer is uniform and delicate, and at the same time, the wall thickness of the ceramic metal layer is effectively increased, so as to avoid the phenomenon that the ceramic wall is broken down or cracked due to the excessive current generated by the magnetic field in the magnetron, and prolong the service life of the magnetron.
本发明的技术方案是这样实现的:The technical scheme of the present invention is realized as follows:
本发明提供一种微波磁控管绝缘陶瓷环,包括以下步骤:The invention provides a microwave magnetron insulating ceramic ring, comprising the following steps:
S1. 助镀剂的配置:所述助镀剂包括NH4Cl、NaF、K2ZrF6、氯化铈、氯化镧和水,将上述原料按比例混合均匀,备用;S1. The configuration of the plating aid: the plating aid includes NH 4 Cl, NaF, K 2 ZrF 6 , cerium chloride, lanthanum chloride and water, and the above-mentioned raw materials are uniformly mixed in proportion for use;
S2. 高纯铝块、高纯铜块的处理:将高纯铝块和高纯铜块分别放入超声波发生器中,用乙醇溶液超声清洗掉表面的油脂,之后用热NaOH溶液去除表面的氧化膜,最后用去离子水洗净后放入烘箱中烘干;S2. Treatment of high-purity aluminum block and high-purity copper block: Put the high-purity aluminum block and high-purity copper block into the ultrasonic generator respectively, ultrasonically clean the surface grease with ethanol solution, and then use hot NaOH solution to remove the surface oil. The oxide film is finally washed with deionized water and then dried in an oven;
S3. 预处理:将环形陶瓷基体浸泡在热助镀剂中浸泡10-20min后取出,备用;S3. Pretreatment: soak the annular ceramic substrate in the hot-plating flux for 10-20min, then take it out for use;
S4. 热浸镀铝、铜合金:将步骤S3中处理后的环形陶瓷基体放入石墨导轨中,将步骤S2中清洗后的高纯铝块、高纯铜块放入石墨坩埚中,用有机硅密封胶将炉体密封,待密封胶干燥后,开始加热直至设定温度,同时通入一定流量的高纯氮气,当石墨坩埚内的铝、铜融化后,将环形陶瓷基体从导轨下方入口匀速推入导轨,环形陶瓷基体通过石墨导轨的窗口与熔融铝铜合金液接触,之后与表面附着的铝铜合金液一起匀速推出并逐渐冷却,就能在陶瓷表面得到一层均匀的3-10微米厚的铝铜合金膜;S4. Hot-dip aluminum and copper alloy plating: put the annular ceramic substrate processed in step S3 into a graphite guide rail, put the high-purity aluminum block and high-purity copper block cleaned in step S2 into a graphite crucible, and use organic The silicon sealant seals the furnace body. After the sealant is dry, it starts to heat up to the set temperature, and at the same time, a certain flow of high-purity nitrogen gas is introduced. When the aluminum and copper in the graphite crucible are melted, the annular ceramic matrix is imported from the bottom of the guide rail. Pushing into the guide rail at a constant speed, the annular ceramic substrate contacts the molten aluminum-copper alloy liquid through the window of the graphite guide rail, and then pushes out uniformly and gradually cools together with the aluminum-copper alloy liquid attached to the surface, and a uniform layer of 3-10 can be obtained on the ceramic surface. Micron-thick aluminum-copper alloy film;
S5.双面热浸镀铝、铜合金:将步骤S4所得到的单面金属化环形陶瓷进行双面金属化;将环形陶瓷基体已经金属化的端面朝上放入石墨导轨中,将步骤S2中清洗后的高纯铝块、高纯铜块放入石墨坩埚中,用有机硅密封胶将炉体密封,待密封胶干燥后,开始加热直至设定温度,同时通入一定流量的高纯氮气,当石墨坩埚内的铝、铜融化后,将环形陶瓷基体从导轨下方入口匀速推入导轨,环形陶瓷基体通过石墨导轨的窗口与熔融铝铜合金液接触,之后与表面附着的铝铜合金液一起匀速推出并逐渐冷却,得到双面金属化环形陶瓷,金属化层为一层均匀的3-10微米厚的铝铜合金膜;S5. Double-sided hot-dip aluminum and copper alloy plating: perform double-sided metallization on the single-sided metallized annular ceramic obtained in step S4; The high-purity aluminum block and high-purity copper block cleaned in S2 are put into a graphite crucible, and the furnace body is sealed with silicone sealant. Pure nitrogen, when the aluminum and copper in the graphite crucible are melted, the annular ceramic substrate is pushed into the guide rail at a constant speed from the entrance below the guide rail. The alloy liquid is pushed out at a uniform speed and gradually cooled to obtain double-sided metallized annular ceramics, and the metallized layer is a uniform aluminum-copper alloy film with a thickness of 3-10 microns;
S6.侧壁清洗:将步骤S5得到的双面金属化环形陶瓷内侧壁和外侧壁进行机械抛光,将内侧壁和外侧壁上流涏的铝铜合金膜打磨掉,然后放入水中超声清洗10-15min得到金属化陶瓷件;S6. Side wall cleaning: mechanically polish the inner and outer side walls of the double-sided metallized annular ceramics obtained in step S5, and polish off the aluminum-copper alloy film on the inner and outer side walls, and then put them into water for ultrasonic cleaning for 10- 15min to obtain metallized ceramic parts;
S7.电镀镍层:将步骤S6得到的金属化陶瓷件浸泡在镍的电镀液中进行电镀;S7. Electroplating nickel layer: the metallized ceramic piece obtained in step S6 is immersed in a nickel electroplating solution for electroplating;
S8.侧壁再次清洗:将步骤S7电镀后的金属化陶瓷件内侧壁和外侧壁进行再次机械抛光,表面粗糙度Ra为0.1-0.3微米;然后放入去离子水中超声清洗10-15min得到微波磁控管绝缘陶瓷环。S8. Re-cleaning of the sidewall: the inner and outer sidewalls of the metallized ceramic piece after electroplating in step S7 are mechanically polished again, and the surface roughness Ra is 0.1-0.3 microns; then put into deionized water for ultrasonic cleaning for 10-15min to obtain microwaves Magnetron insulating ceramic ring.
作为本发明的进一步改进,所述助镀剂由以下原料按重量份制备而成:NH4Cl 70-120份、NaF 0.5-1.5份、K2ZrF6 70-120份、氯化铈0.01-0.1份、氯化镧0.01-0.1份和水300-500份。As a further improvement of the present invention, the plating aid is prepared from the following raw materials in parts by weight: 70-120 parts of NH 4 Cl, 0.5-1.5 parts of NaF, 70-120 parts of K 2 ZrF 6 , 0.01-120 parts of cerium chloride 0.1 part, 0.01-0.1 part of lanthanum chloride and 300-500 parts of water.
作为本发明的进一步改进,步骤S2中所述乙醇溶液的质量百分比浓度为70-90%,所述热NaOH溶液的质量百分比浓度为10-15%,温度为40-60℃,所述超声清洗的功率为800-1200W,所述高纯铝块中铝含量大于99%,所述高纯铜块中铜含量大于99%。As a further improvement of the present invention, in step S2, the mass percentage concentration of the ethanol solution is 70-90%, the mass percentage concentration of the hot NaOH solution is 10-15%, and the temperature is 40-60° C. The ultrasonic cleaning The power of the high-purity aluminum block is 800-1200W, the aluminum content in the high-purity aluminum block is greater than 99%, and the copper content in the high-purity copper block is greater than 99%.
作为本发明的进一步改进,步骤S3中所述热助镀剂的温度为40-50℃。As a further improvement of the present invention, the temperature of the thermal fluxing agent in step S3 is 40-50°C.
作为本发明的进一步改进,步骤S4中所述高纯氮气中氮气体积分数大于99.995%,所述高纯氮气的通入速率为2-5L/min,所述设定温度为1200-1400℃。As a further improvement of the present invention, the volume fraction of nitrogen in the high-purity nitrogen in step S4 is greater than 99.995%, the inflow rate of the high-purity nitrogen is 2-5L/min, and the set temperature is 1200-1400°C.
作为本发明的进一步改进,所述有机硅密封胶选自醋酸型、酮肟型、醇型、酰胺型、羟胺型、酮型有机硅密封胶中的一种或几种混合。As a further improvement of the present invention, the silicone sealant is selected from one or a mixture of acetic acid type, ketoxime type, alcohol type, amide type, hydroxylamine type and ketone type silicone sealant.
作为本发明的进一步改进,所述镍的电镀液由以下原料按量制备而成:NiSO4·6H2O 500-600g/L,NaCl 10-20g/L,H3BO3 20-30g/L,柔软剂BSI 15-30mL/L,润湿剂MA-801-2mL/L,稳定剂PVA-124 0.5-1.2mL/L。As a further improvement of the present invention, the nickel electroplating solution is prepared from the following raw materials: NiSO 4 ·6H 2 O 500-600g/L, NaCl 10-20g/L, H 3 BO 3 20-30g/L , softener BSI 15-30mL/L, wetting agent MA-801-2mL/L, stabilizer PVA-124 0.5-1.2mL/L.
作为本发明的进一步改进,所述电镀工艺为:采用267mL赫尔槽,取250mL镀液,阳极为100mm×60mm×3mm的纯镍板,阴极为100mm×65mm×0.3mm 的黄铜片,温度为50-60℃,pH为3.5-4.5,阴极电流密度为2-15A/dm2,电流2A,采用玻璃棒在阴极附近平行于阴极来回往复搅拌,移动速率为1次/s,时间5-10min。As a further improvement of the present invention, the electroplating process is as follows: using a 267mL Hull cell, taking 250mL plating solution, the anode is a pure nickel plate of 100mm×60mm×3mm, the cathode is a brass sheet of 100mm×65mm×0.3mm, and the temperature is The temperature is 50-60℃, pH is 3.5-4.5, cathode current density is 2-15A/dm 2 , current is 2A, glass rod is used to stir back and forth parallel to the cathode near the cathode, the moving rate is 1 time/s, the time is 5- 10min.
本发明进一步保护一种由上述方法制备得到的金属化化陶瓷。The present invention further protects a metallized ceramic prepared by the above method.
本发明进一步保护上述的金属化化陶瓷在于磁控管中的应用。The present invention further protects the use of the above-mentioned metallized ceramics in magnetrons.
本发明具有如下有益效果:本发明中,由于热浸镀铝、铜合金液温度较高,铝易生氧化铝膜,所以使用助镀剂NH4Cl,并引入氟化物K2ZrF6 和NaF,能在白瓷表面形成连续完整且无孔隙的保护膜;同时浸铝、铜合金液时能立即从白瓷表面脱除;对出现的一些氧化物有吸附熔解作用,同时,对铝液无污染,加入稀土金属氯化物,如氯化铈、氯化镧,可以使从而使晶粒细化而提高白瓷的表面性能,且氯化铈、氯化镧的添加具有协同增效的作用;The present invention has the following beneficial effects: in the present invention, due to the high temperature of hot dip aluminum plating and copper alloy solution, aluminum is prone to form aluminum oxide film, so plating flux NH 4 Cl is used, and fluorides K 2 ZrF 6 and NaF are introduced It can form a continuous, complete and non-porous protective film on the surface of white porcelain; at the same time, it can be removed from the surface of white porcelain immediately when immersed in aluminum and copper alloy liquid; it has adsorption and melting effect on some oxides that appear, and at the same time, it has no effect on aluminum liquid. Pollution, adding rare earth metal chlorides, such as cerium chloride and lanthanum chloride, can refine the grains and improve the surface properties of white porcelain, and the addition of cerium chloride and lanthanum chloride has a synergistic effect;
本发明采用热浸镀铝铜合金与陶瓷晶相颗粒合理匹配技术,在不提高烧结温度的前提下,使金属化铝铜合金层在烧结时能与陶瓷体形成紧密结合,然后再在金属化铝铜合金层上电镀一层金属化镍层, 从而大大提高了陶瓷金属化层的表面质量和抗拉强度,且金属层均匀、细腻;The invention adopts the reasonable matching technology of hot-dip aluminum-copper alloy and ceramic crystal phase particles, and without increasing the sintering temperature, the metallized aluminum-copper alloy layer can form a close bond with the ceramic body during sintering, and then the metallized aluminum-copper alloy layer can be closely combined with the ceramic body during sintering. A metallized nickel layer is electroplated on the aluminum-copper alloy layer, which greatly improves the surface quality and tensile strength of the ceramic metallized layer, and the metal layer is uniform and delicate;
本发明制备工艺简单,热浸镀铝铜合金时覆盖率高,触角可以降低至 0°,达到“完美润湿”,产生铝铜合金液与环形陶瓷基体表面的“超常润湿”现象;进一步在合金层表面电镀一层金属镍层,有效提高陶瓷金属层的壁厚,避免由于磁控管内磁场产生电流过大致使陶瓷壁被击穿或产生裂痕的现象发生,延长了磁控管的使用寿命。The preparation process of the invention is simple, the coverage rate is high during hot-dip aluminum-copper alloy plating, the antenna angle can be reduced to 0°, "perfect wetting" is achieved, and the phenomenon of "extraordinary wetting" between the aluminum-copper alloy liquid and the surface of the annular ceramic substrate is generated; further Electroplating a metal nickel layer on the surface of the alloy layer can effectively increase the wall thickness of the ceramic metal layer, avoid the phenomenon that the ceramic wall is broken down or cracked due to the excessive current generated by the magnetic field in the magnetron, and prolong the life of the magnetron. service life.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention, and for those of ordinary skill in the art, other drawings can also be obtained from these drawings without any creative effort.
图1为本发明实施例3中环形陶瓷基体表面经过热浸镀铝、铜样品的断面形貌扫描电子显微镜图;Fig. 1 is the scanning electron microscope picture of the cross-sectional topography of the surface of the annular ceramic substrate through hot-dip aluminum plating and copper samples in Example 3 of the present invention;
图2为本发明实施例3中铝、铜膜层与镍层结构透射电镜图。FIG. 2 is a transmission electron microscope image of the structures of aluminum, copper film layers and nickel layers in Example 3 of the present invention.
具体实施方式Detailed ways
下面将对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be described clearly and completely below. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
实施例1Example 1
S1. 助镀剂的配置:S1. Flux configuration:
助镀剂由以下原料按重量份制备而成:NH4Cl 70份、NaF 0.5份、K2ZrF6 70份、氯化铈0.01份、氯化镧0.01份和水300份,将上述原料按比例混合均匀,备用;The plating aid is prepared by weight of the following raw materials: 70 parts of NH 4 Cl, 0.5 parts of NaF, 70 parts of K 2 ZrF 6 , 0.01 part of cerium chloride, 0.01 part of lanthanum chloride and 300 parts of water. The ratio is mixed evenly, and it is ready for use;
S2. 高纯铝块、高纯铜块的处理:将高纯铝块和高纯铜块分别放入超声波发生器中,用70wt%乙醇溶液超声清洗掉表面的油脂,超声清洗功率为800W,之后用40℃的10wt%NaOH溶液去除表面的氧化膜,最后用去离子水洗净后放入烘箱中烘干;高纯铝块中铝含量大于99%,所述高纯铜块中铜含量大于99%;S2. Treatment of high-purity aluminum block and high-purity copper block: put the high-purity aluminum block and high-purity copper block into the ultrasonic generator respectively, and ultrasonically clean the surface grease with 70wt% ethanol solution. The ultrasonic cleaning power is 800W, Then use 10wt% NaOH solution at 40°C to remove the oxide film on the surface, and finally wash it with deionized water and then put it into an oven for drying; the aluminum content in the high-purity aluminum block is greater than 99%, and the copper content in the high-purity copper block is greater than 99%;
S3. 预处理:将环形陶瓷基体浸泡在40℃的助镀剂中浸泡10min后取出,备用;S3. Pretreatment: soak the annular ceramic substrate in a plating flux at 40°C for 10 minutes, then take it out for use;
S4. 热浸镀铝、铜合金:将步骤S3中处理后的环形陶瓷基体放入石墨导轨中,将步骤S2中清洗后的高纯铝块、高纯铜块放入石墨坩埚中,用羟胺型有机硅密封胶将炉体密封,待密封胶干燥后,开始加热直至1200℃,同时通入速率为2L/min的高纯氮气(氮气体积分数大于99.995%),当石墨坩埚内的铝、铜融化后,将环形陶瓷基体从导轨下方入口匀速推入导轨,环形陶瓷基体通过石墨导轨的窗口与熔融铝铜合金液接触,之后与表面附着的铝铜合金液一起匀速推出并逐渐冷却,就能在陶瓷表面得到一层均匀的3-10微米厚的铝铜合金膜;S4. Hot-dip aluminizing, copper alloy: put the annular ceramic substrate processed in step S3 into the graphite guide rail, put the high-purity aluminum block and high-purity copper block cleaned in step S2 into a graphite crucible, and use hydroxylamine The furnace body is sealed with type silicone sealant. After the sealant is dried, it starts to heat up to 1200°C, and at the same time, high-purity nitrogen gas (nitrogen volume fraction greater than 99.995%) at a rate of 2L/min is introduced. After the copper is melted, the annular ceramic base is pushed into the guide rail at a constant speed from the entrance below the guide rail, and the annular ceramic base is in contact with the molten aluminum-copper alloy liquid through the window of the graphite guide rail. A uniform 3-10 micron thick aluminum-copper alloy film can be obtained on the ceramic surface;
S5.双面热浸镀铝、铜合金:将步骤S4所得到的单面金属化环形陶瓷进行双面金属化;将环形陶瓷基体已经金属化的端面朝上放入石墨导轨中,将步骤S2中清洗后的高纯铝块、高纯铜块放入石墨坩埚中,用有机硅密封胶将炉体密封,待密封胶干燥后,开始加热直至1200℃,同时通入速率为2L/min的高纯氮气(氮气体积分数大于99.995%),当石墨坩埚内的铝、铜融化后,将环形陶瓷基体从导轨下方入口匀速推入导轨,环形陶瓷基体通过石墨导轨的窗口与熔融铝铜合金液接触,之后与表面附着的铝铜合金液一起匀速推出并逐渐冷却,就能在陶瓷表面得到一层均匀的3-10微米厚的铝铜合金膜;S5. Double-sided hot-dip aluminum and copper alloy plating: perform double-sided metallization on the single-sided metallized annular ceramic obtained in step S4; The high-purity aluminum block and high-purity copper block cleaned in S2 are placed in a graphite crucible, and the furnace body is sealed with silicone sealant. After the sealant is dried, heating is started until 1200 ° C, and the feeding rate is 2L/min. high-purity nitrogen (nitrogen volume fraction greater than 99.995%), when the aluminum and copper in the graphite crucible are melted, the annular ceramic substrate is pushed into the guide rail at a constant speed from the entrance below the guide rail, and the annular ceramic substrate passes through the window of the graphite guide rail and molten aluminum-copper alloy After contacting with the liquid, and then pushing out the aluminum-copper alloy liquid attached to the surface at a uniform speed and gradually cooling, a uniform layer of aluminum-copper alloy film with a thickness of 3-10 microns can be obtained on the ceramic surface;
S6.侧壁清洗:将步骤S5得到的双面金属化环形陶瓷内侧壁和外侧壁进行机械抛光,将内侧壁和外侧壁上流涏的铝铜合金膜打磨掉,然后放入水中超声清洗10-15min得到金属化陶瓷件,超声清洗功率为100W;S6. Side wall cleaning: mechanically polish the inner and outer side walls of the double-sided metallized annular ceramics obtained in step S5, and polish off the aluminum-copper alloy film on the inner and outer side walls, and then put them into water for ultrasonic cleaning for 10- The metallized ceramic parts were obtained in 15 minutes, and the ultrasonic cleaning power was 100W;
S7.电镀镍层:将步骤S6得到的金属化陶瓷件浸泡在镍的电镀液中进行电镀;S7. Electroplating nickel layer: the metallized ceramic piece obtained in step S6 is immersed in a nickel electroplating solution for electroplating;
电镀液由以下原料按量制备而成:NiSO4·6H2O 500g/L,NaCl 10g/L,H3BO3 20g/L,柔软剂BSI 15mL/L,润湿剂MA-80 1mL/L,稳定剂PVA-124 0.5mL/L,其余的为去离子水;The electroplating solution is prepared by the following raw materials: NiSO 4 6H 2 O 500g/L, NaCl 10g/L, H 3 BO 3 20g/L, softener BSI 15mL/L, wetting agent MA-80 1mL/L , stabilizer PVA-124 0.5mL/L, the rest is deionized water;
电镀工艺为:采用267mL赫尔槽,取250mL镀液,阳极为100mm×60mm×3mm的纯镍板,阴极为100mm×65mm×0.3mm 的黄铜片,温度为50℃,pH为3.5,阴极电流密度为2A/dm2,电流2A,采用玻璃棒在阴极附近平行于阴极来回往复搅拌,移动速率为1次/s,时间5min。The electroplating process is as follows: 267mL Hull cell is used, 250mL plating solution is taken, the anode is a pure nickel plate of 100mm × 60mm × 3mm, the cathode is a brass sheet of 100mm × 65mm × 0.3mm, the temperature is 50 ° C, the pH is 3.5, and the cathode is The current density was 2A/dm 2 , the current was 2A, and a glass rod was used to stir back and forth parallel to the cathode near the cathode, the moving rate was 1 time/s, and the time was 5 min.
S8.侧壁再次清洗:将步骤S7电镀后的金属化陶瓷件内侧壁和外侧壁进行再次机械抛光,表面粗糙度Ra为0.1微米;然后放入去离子水中超声清洗10min得到微波磁控管绝缘陶瓷环。S8. Re-cleaning of the sidewall: the inner and outer sidewalls of the metallized ceramic piece after electroplating in step S7 are mechanically polished again, and the surface roughness Ra is 0.1 μm; then put into deionized water for ultrasonic cleaning for 10min to obtain microwave magnetron insulation Ceramic ring.
实施例2Example 2
S1. 助镀剂的配置:S1. Flux configuration:
助镀剂由以下原料按重量份制备而成:NH4Cl 120份、NaF 1.5份、K2ZrF6 120份、氯化铈0.1份、氯化镧0.1份和水500份,将上述原料按比例混合均匀,备用;The plating aid is prepared by weight of the following raw materials: 120 parts of NH 4 Cl, 1.5 parts of NaF, 120 parts of K 2 ZrF 6 , 0.1 part of cerium chloride, 0.1 part of lanthanum chloride and 500 parts of water. The ratio is mixed evenly, and it is ready for use;
S2. 高纯铝块、高纯铜块的处理:将高纯铝块和高纯铜块分别放入超声波发生器中,用90wt%乙醇溶液超声清洗掉表面的油脂,超声清洗功率为1200W,之后用60℃的15wt%NaOH溶液去除表面的氧化膜,最后用去离子水洗净后放入烘箱中烘干;高纯铝块中铝含量大于99%,所述高纯铜块中铜含量大于99%;S2. Treatment of high-purity aluminum block and high-purity copper block: put the high-purity aluminum block and high-purity copper block into the ultrasonic generator respectively, and ultrasonically clean the surface grease with 90wt% ethanol solution. The ultrasonic cleaning power is 1200W, Then use 15wt% NaOH solution at 60°C to remove the oxide film on the surface, and finally wash it with deionized water and put it into an oven for drying; the aluminum content in the high-purity aluminum block is greater than 99%, and the copper content in the high-purity copper block greater than 99%;
S3. 预处理:将环形陶瓷基体浸泡在40-50℃的助镀剂中浸泡20min后取出,备用;S3. Pretreatment: soak the annular ceramic substrate in the flux at 40-50℃ for 20min, then take it out for use;
S4. 热浸镀铝、铜合金:将步骤S3中处理后的环形陶瓷基体放入石墨导轨中,将步骤S2中清洗后的高纯铝块、高纯铜块放入石墨坩埚中,用醇型有机硅密封胶将炉体密封,待密封胶干燥后,开始加热直至1400℃,同时通入速率为5L/min的高纯氮气(氮气体积分数大于99.995%),当石墨坩埚内的铝、铜融化后,将环形陶瓷基体从导轨下方入口匀速推入导轨,环形陶瓷基体通过石墨导轨的窗口与熔融铝铜合金液接触,之后与表面附着的铝铜合金液一起匀速推出并逐渐冷却,就能在陶瓷表面得到一层均匀的3-10微米厚的铝铜合金膜;S4. Hot-dip aluminum and copper alloy plating: put the annular ceramic substrate processed in step S3 into a graphite guide rail, put the high-purity aluminum block and high-purity copper block cleaned in step S2 into a graphite crucible, and use alcohol Type silicone sealant seals the furnace body. After the sealant dries, it starts to heat up to 1400°C, and at the same time, high-purity nitrogen gas (nitrogen volume fraction greater than 99.995%) at a rate of 5L/min is introduced. After the copper is melted, the annular ceramic base is pushed into the guide rail at a constant speed from the entrance below the guide rail, and the annular ceramic base is in contact with the molten aluminum-copper alloy liquid through the window of the graphite guide rail. A uniform 3-10 micron thick aluminum-copper alloy film can be obtained on the ceramic surface;
S5.双面热浸镀铝、铜合金:将步骤S4所得到的单面金属化环形陶瓷进行双面金属化;将环形陶瓷基体已经金属化的端面朝上放入石墨导轨中,将步骤S2中清洗后的高纯铝块、高纯铜块放入石墨坩埚中,用有机硅密封胶将炉体密封,待密封胶干燥后,开始加热直至1400℃,同时通入速率为5L/min的高纯氮气(氮气体积分数大于99.995%),当石墨坩埚内的铝、铜融化后,将环形陶瓷基体从导轨下方入口匀速推入导轨,环形陶瓷基体通过石墨导轨的窗口与熔融铝铜合金液接触,之后与表面附着的铝铜合金液一起匀速推出并逐渐冷却,就能在陶瓷表面得到一层均匀的3-10微米厚的铝铜合金膜;S5. Double-sided hot-dip aluminum and copper alloy plating: perform double-sided metallization on the single-sided metallized annular ceramic obtained in step S4; The high-purity aluminum block and high-purity copper block cleaned in S2 are placed in a graphite crucible, and the furnace body is sealed with silicone sealant. After the sealant is dried, heating is started until 1400 ° C, and the feeding rate is 5L/min. high-purity nitrogen (nitrogen volume fraction greater than 99.995%), when the aluminum and copper in the graphite crucible are melted, the annular ceramic substrate is pushed into the guide rail at a constant speed from the entrance below the guide rail, and the annular ceramic substrate passes through the window of the graphite guide rail and molten aluminum-copper alloy After contacting with the liquid, and then pushing out the aluminum-copper alloy liquid attached to the surface at a uniform speed and gradually cooling, a uniform layer of aluminum-copper alloy film with a thickness of 3-10 microns can be obtained on the ceramic surface;
S6.侧壁清洗:将步骤S5得到的双面金属化环形陶瓷内侧壁和外侧壁进行机械抛光,将内侧壁和外侧壁上流涏的铝铜合金膜打磨掉,然后放入水中超声清洗10-15min得到金属化陶瓷件,超声清洗功率为150W;S6. Side wall cleaning: mechanically polish the inner and outer side walls of the double-sided metallized annular ceramics obtained in step S5, and polish off the aluminum-copper alloy film on the inner and outer side walls, and then put them into water for ultrasonic cleaning for 10- The metallized ceramic parts were obtained in 15 minutes, and the ultrasonic cleaning power was 150W;
S7.电镀镍层:将步骤S6得到的金属化陶瓷件浸泡在镍的电镀液中进行电镀;S7. Electroplating nickel layer: the metallized ceramic piece obtained in step S6 is immersed in a nickel electroplating solution for electroplating;
电镀液由以下原料按量制备而成:NiSO4·6H2O 600g/L,NaCl 20g/L,H3BO3 30g/L,柔软剂BSI 30mL/L,润湿剂MA-80 2mL/L,稳定剂PVA-124 1.2mL/L,其余的为去离子水;The electroplating solution is prepared by the following raw materials: NiSO 4 6H 2 O 600g/L, NaCl 20g/L, H 3 BO 3 30g/L, softener BSI 30mL/L, wetting agent MA-80 2mL/L , stabilizer PVA-124 1.2mL/L, the rest is deionized water;
电镀工艺为:采用267mL赫尔槽,取250mL镀液,阳极为100mm×60mm×3mm的纯镍板,阴极为100mm×65mm×0.3mm 的黄铜片,温度为60℃,pH为4.5,阴极电流密度为15A/dm2,电流2A,采用玻璃棒在阴极附近平行于阴极来回往复搅拌,移动速率为1次/s,时间10min。The electroplating process is as follows: 267mL Hull cell is used, 250mL plating solution is taken, the anode is a pure nickel plate of 100mm × 60mm × 3mm, the cathode is a brass sheet of 100mm × 65mm × 0.3mm, the temperature is 60 ° C, the pH is 4.5, and the cathode is The current density was 15A/dm 2 , the current was 2A, and a glass rod was used to stir back and forth parallel to the cathode near the cathode, the moving rate was 1 time/s, and the time was 10 min.
S8.侧壁再次清洗:将步骤S7电镀后的金属化陶瓷件内侧壁和外侧壁进行再次机械抛光,表面粗糙度Ra为0.3微米;然后放入去离子水中超声清洗15min得到微波磁控管绝缘陶瓷环。S8. Re-cleaning of the side walls: the inner and outer side walls of the metallized ceramic pieces after electroplating in step S7 are mechanically polished again, and the surface roughness Ra is 0.3 microns; then put into deionized water for ultrasonic cleaning for 15 minutes to obtain microwave magnetron insulation Ceramic ring.
实施例3Example 3
S1. 助镀剂的配置:S1. Flux configuration:
助镀剂由以下原料按重量份制备而成:NH4Cl 100份、NaF 1份、K2ZrF6 100份、氯化铈0.05份、氯化镧0.05份和水400份,将上述原料按比例混合均匀,备用;The plating aid is prepared by weight of the following raw materials: 100 parts of NH 4 Cl, 1 part of NaF, 100 parts of K 2 ZrF 6 , 0.05 part of cerium chloride, 0.05 part of lanthanum chloride and 400 parts of water. The ratio is mixed evenly, and it is ready for use;
S2. 高纯铝块、高纯铜块的处理:将高纯铝块和高纯铜块分别放入超声波发生器中,用80wt%乙醇溶液超声清洗掉表面的油脂,超声清洗功率为1000W,之后用50℃的12wt%NaOH溶液去除表面的氧化膜,最后用去离子水洗净后放入烘箱中烘干;高纯铝块中铝含量大于99%,所述高纯铜块中铜含量大于99%;S2. Treatment of high-purity aluminum block and high-purity copper block: Put the high-purity aluminum block and high-purity copper block into the ultrasonic generator respectively, and ultrasonically clean the surface grease with 80wt% ethanol solution. The ultrasonic cleaning power is 1000W, Then use 12wt% NaOH solution at 50°C to remove the oxide film on the surface, and finally wash it with deionized water and put it in an oven for drying; the aluminum content in the high-purity aluminum block is greater than 99%, and the copper content in the high-purity copper block greater than 99%;
S3. 预处理:将环形陶瓷基体浸泡在45℃的助镀剂中浸泡15min后取出,备用;S3. Pretreatment: soak the annular ceramic substrate in a plating flux at 45°C for 15 minutes, then take it out for use;
S4. 热浸镀铝、铜合金:将步骤S3中处理后的环形陶瓷基体放入石墨导轨中,将步骤S2中清洗后的高纯铝块、高纯铜块放入石墨坩埚中,用醋酸型有机硅密封胶将炉体密封,待密封胶干燥后,开始加热直至1300℃,同时通入速率为3.5L/min的高纯氮气(氮气体积分数大于99.995%),当石墨坩埚内的铝、铜融化后,将环形陶瓷基体从导轨下方入口匀速推入导轨,环形陶瓷基体通过石墨导轨的窗口与熔融铝铜合金液接触,之后与表面附着的铝铜合金液一起匀速推出并逐渐冷却,就能在陶瓷表面得到一层均匀的3-10微米厚的铝铜合金膜;S4. Hot-dip aluminum and copper alloy plating: put the annular ceramic substrate processed in step S3 into a graphite guide rail, put the high-purity aluminum block and high-purity copper block cleaned in step S2 into a graphite crucible, and use acetic acid The furnace body is sealed with type silicone sealant. After the sealant is dried, it starts to heat up to 1300°C, and at the same time, high-purity nitrogen gas (nitrogen volume fraction greater than 99.995%) at a rate of 3.5L/min is introduced. After the copper is melted, the annular ceramic base is pushed into the guide rail at a constant speed from the entrance below the guide rail, and the annular ceramic base is in contact with the molten aluminum-copper alloy liquid through the window of the graphite guide rail. A uniform 3-10 micron thick aluminum-copper alloy film can be obtained on the ceramic surface;
S5.双面热浸镀铝、铜合金:将步骤S4所得到的单面金属化环形陶瓷进行双面金属化;将环形陶瓷基体已经金属化的端面朝上放入石墨导轨中,将步骤S2中清洗后的高纯铝块、高纯铜块放入石墨坩埚中,用有机硅密封胶将炉体密封,待密封胶干燥后,开始加热直至1300℃,同时通入速率为3.5L/min的高纯氮气(氮气体积分数大于99.995%),当石墨坩埚内的铝、铜融化后,将环形陶瓷基体从导轨下方入口匀速推入导轨,环形陶瓷基体通过石墨导轨的窗口与熔融铝铜合金液接触,之后与表面附着的铝铜合金液一起匀速推出并逐渐冷却,就能在陶瓷表面得到一层均匀的3-10微米厚的铝铜合金膜;S5. Double-sided hot-dip aluminum and copper alloy plating: perform double-sided metallization on the single-sided metallized annular ceramic obtained in step S4; The high-purity aluminum block and high-purity copper block cleaned in S2 are put into a graphite crucible, and the furnace body is sealed with silicone sealant. min of high-purity nitrogen (the volume fraction of nitrogen is greater than 99.995%), when the aluminum and copper in the graphite crucible are melted, the annular ceramic substrate is pushed into the guide rail at a constant speed from the entrance below the guide rail, and the annular ceramic substrate passes through the window of the graphite guide rail. The alloy liquid is contacted, and then pushed out together with the aluminum-copper alloy liquid attached to the surface at a uniform speed and gradually cooled, a uniform layer of aluminum-copper alloy film with a thickness of 3-10 microns can be obtained on the ceramic surface;
S6.侧壁清洗:将步骤S5得到的双面金属化环形陶瓷内侧壁和外侧壁进行机械抛光,将内侧壁和外侧壁上流涏的铝铜合金膜打磨掉,然后放入水中超声清洗10-15min得到金属化陶瓷件,超声清洗功率为120W;S6. Side wall cleaning: mechanically polish the inner and outer side walls of the double-sided metallized annular ceramics obtained in step S5, and polish off the aluminum-copper alloy film on the inner and outer side walls, and then put them into water for ultrasonic cleaning for 10- The metallized ceramic parts were obtained in 15 minutes, and the ultrasonic cleaning power was 120W;
S7.电镀镍层:将步骤S6得到的金属化陶瓷件浸泡在镍的电镀液中进行电镀;S7. Electroplating nickel layer: the metallized ceramic piece obtained in step S6 is immersed in a nickel electroplating solution for electroplating;
电镀液由以下原料按量制备而成:NiSO4·6H2O 550g/L,NaCl 15g/L,H3BO3 25g/L,柔软剂BSI 22mL/L,润湿剂MA-80 1.5mL/L,稳定剂PVA-124 0.7mL/L,其余的为去离子水;The electroplating solution is prepared by the following raw materials: NiSO 4 6H 2 O 550g/L, NaCl 15g/L, H 3 BO 3 25g/L, softener BSI 22mL/L, wetting agent MA-80 1.5mL/ L, stabilizer PVA-124 0.7mL/L, the rest are deionized water;
电镀工艺为:采用267mL赫尔槽,取250mL镀液,阳极为100mm×60mm×3mm的纯镍板,阴极为100mm×65mm×0.3mm 的黄铜片,温度为55℃,pH为4,阴极电流密度为8A/dm2,电流2A,采用玻璃棒在阴极附近平行于阴极来回往复搅拌,移动速率为1次/s,时间7min。The electroplating process is as follows: 267mL Hull cell is used, 250mL plating solution is taken, the anode is a pure nickel plate of 100mm × 60mm × 3mm, the cathode is a brass sheet of 100mm × 65mm × 0.3mm, the temperature is 55 ° C, the pH is 4, and the cathode is The current density was 8A/dm 2 , the current was 2A, and a glass rod was used to stir back and forth parallel to the cathode near the cathode, the moving rate was 1 time/s, and the time was 7min.
S8.侧壁再次清洗:将步骤S7电镀后的金属化陶瓷件内侧壁和外侧壁进行再次机械抛光,表面粗糙度Ra为0.2微米;然后放入去离子水中超声清洗12min得到微波磁控管绝缘陶瓷环。S8. Re-cleaning of the side walls: the inner and outer side walls of the metallized ceramic pieces after electroplating in step S7 are mechanically polished again, and the surface roughness Ra is 0.2 microns; then put into deionized water for ultrasonic cleaning for 12 minutes to obtain microwave magnetron insulation Ceramic ring.
使用日本岛津公司的SSX-550型扫描电子显微镜,观察了环形陶瓷基体表面经过热浸镀铝、铜样品的表面和断面形貌,如图1 所示。环形陶瓷基体热浸镀铝、铜工艺可以在环形陶瓷基体表面得到均匀和平整的铝、铜膜层,从图中可以看出,环形陶瓷基体与铝、铜膜层的界面处连接紧密,没有孔洞和裂纹,可见热浸镀铝铜工艺可以在环形陶瓷基体上形成均匀的铝、铜膜,出现了铝、铜和环形陶瓷基体的“超润湿”现象。Using the SSX-550 scanning electron microscope of Shimadzu Corporation of Japan, the surface and cross-sectional morphology of the ring-shaped ceramic substrate after hot-dip aluminum plating and copper samples were observed, as shown in Figure 1. The process of hot-dip aluminum and copper plating on the annular ceramic substrate can obtain uniform and flat aluminum and copper film layers on the surface of the annular ceramic substrate. Holes and cracks, it can be seen that the hot-dip aluminum-copper process can form uniform aluminum and copper films on the annular ceramic substrate, and the phenomenon of "super-wetting" of aluminum, copper and annular ceramic substrates appears.
使用日本电子 JEOL-2011 透射电镜观察了铝、铜膜层与镍层结构,结果见图2,说明铝、铜膜层与镍层的界面处这些台阶状突起的高度约为 3-4 nm,其表面十分平整。且从晶格像看,这些台阶明显是在铝、铜膜层表面表面外延生长而成。由此可见,形成的金属层均匀、细腻。The structures of the aluminum, copper films and nickel layers were observed by JEOL-2011 transmission electron microscope. The results are shown in Figure 2, indicating that the height of these stepped protrusions at the interface of the aluminum, copper films and the nickel layer is about 3-4 nm. Its surface is very flat. And from the lattice image, these steps are obviously epitaxially grown on the surface of the aluminum and copper films. It can be seen that the formed metal layer is uniform and fine.
对比例1Comparative Example 1
与实施例3相比,助镀剂中未添加氯化镧,其他条件均不改变。Compared with Example 3, no lanthanum chloride was added to the plating flux, and other conditions were not changed.
S1. 助镀剂的配置:S1. Flux configuration:
助镀剂由以下原料按重量份制备而成:NH4Cl 100份、NaF 1份、K2ZrF6 100份、氯化铈0.05份和水400份,将上述原料按比例混合均匀,备用;The plating aid is prepared from the following raw materials by weight: 100 parts of NH 4 Cl, 1 part of NaF, 100 parts of K 2 ZrF 6 , 0.05 part of cerium chloride and 400 parts of water, and the above-mentioned raw materials are uniformly mixed in proportion for use;
S2. 高纯铝块、高纯铜块的处理:将高纯铝块和高纯铜块分别放入超声波发生器中,用80wt%乙醇溶液超声清洗掉表面的油脂,超声清洗功率为1000W,之后用50℃的12wt%NaOH溶液去除表面的氧化膜,最后用去离子水洗净后放入烘箱中烘干;高纯铝块中铝含量大于99%,所述高纯铜块中铜含量大于99%;S2. Treatment of high-purity aluminum block and high-purity copper block: Put the high-purity aluminum block and high-purity copper block into the ultrasonic generator respectively, and ultrasonically clean the surface grease with 80wt% ethanol solution. The ultrasonic cleaning power is 1000W, Then use 12wt% NaOH solution at 50°C to remove the oxide film on the surface, and finally wash it with deionized water and put it in an oven for drying; the aluminum content in the high-purity aluminum block is greater than 99%, and the copper content in the high-purity copper block greater than 99%;
S3. 预处理:将环形陶瓷基体浸泡在45℃的助镀剂中浸泡15min后取出,备用;S3. Pretreatment: soak the annular ceramic substrate in a plating flux at 45°C for 15 minutes, then take it out for use;
S4. 热浸镀铝、铜合金:将步骤S3中处理后的环形陶瓷基体放入石墨导轨中,将步骤S2中清洗后的高纯铝块、高纯铜块放入石墨坩埚中,用醋酸型有机硅密封胶将炉体密封,待密封胶干燥后,开始加热直至1300℃,同时通入速率为3.5L/min的高纯氮气(氮气体积分数大于99.995%),当石墨坩埚内的铝、铜融化后,将环形陶瓷基体从导轨下方入口匀速推入导轨,环形陶瓷基体通过石墨导轨的窗口与熔融铝铜合金液接触,之后与表面附着的铝铜合金液一起匀速推出并逐渐冷却,就能在陶瓷表面得到一层均匀的3-10微米厚的铝铜合金膜;S4. Hot-dip aluminum and copper alloy plating: put the annular ceramic substrate processed in step S3 into a graphite guide rail, put the high-purity aluminum block and high-purity copper block cleaned in step S2 into a graphite crucible, and use acetic acid The furnace body is sealed with type silicone sealant. After the sealant is dried, it starts to heat up to 1300°C, and at the same time, high-purity nitrogen gas (nitrogen volume fraction greater than 99.995%) at a rate of 3.5L/min is introduced. After the copper is melted, the annular ceramic base is pushed into the guide rail at a constant speed from the entrance below the guide rail, and the annular ceramic base is in contact with the molten aluminum-copper alloy liquid through the window of the graphite guide rail. A uniform 3-10 micron thick aluminum-copper alloy film can be obtained on the ceramic surface;
S5.双面热浸镀铝、铜合金:将步骤S4所得到的单面金属化环形陶瓷进行双面金属化;将环形陶瓷基体已经金属化的端面朝上放入石墨导轨中,将步骤S2中清洗后的高纯铝块、高纯铜块放入石墨坩埚中,用有机硅密封胶将炉体密封,待密封胶干燥后,开始加热直至1300℃,同时通入速率为3.5L/min的高纯氮气(氮气体积分数大于99.995%),当石墨坩埚内的铝、铜融化后,将环形陶瓷基体从导轨下方入口匀速推入导轨,环形陶瓷基体通过石墨导轨的窗口与熔融铝铜合金液接触,之后与表面附着的铝铜合金液一起匀速推出并逐渐冷却,就能在陶瓷表面得到一层均匀的3-10微米厚的铝铜合金膜;S5. Double-sided hot-dip aluminum and copper alloy plating: perform double-sided metallization on the single-sided metallized annular ceramic obtained in step S4; The high-purity aluminum block and high-purity copper block cleaned in S2 are put into a graphite crucible, and the furnace body is sealed with silicone sealant. min of high-purity nitrogen (the volume fraction of nitrogen is greater than 99.995%), when the aluminum and copper in the graphite crucible are melted, the annular ceramic substrate is pushed into the guide rail at a constant speed from the entrance below the guide rail, and the annular ceramic substrate passes through the window of the graphite guide rail. The alloy liquid is contacted, and then pushed out together with the aluminum-copper alloy liquid attached to the surface at a uniform speed and gradually cooled, a uniform layer of aluminum-copper alloy film with a thickness of 3-10 microns can be obtained on the ceramic surface;
S6.侧壁清洗:将步骤S5得到的双面金属化环形陶瓷内侧壁和外侧壁进行机械抛光,将内侧壁和外侧壁上流涏的铝铜合金膜打磨掉,然后放入水中超声清洗10-15min得到金属化陶瓷件,超声清洗功率为120W;S6. Side wall cleaning: mechanically polish the inner and outer side walls of the double-sided metallized annular ceramics obtained in step S5, and polish off the aluminum-copper alloy film on the inner and outer side walls, and then put them into water for ultrasonic cleaning for 10- The metallized ceramic parts were obtained in 15 minutes, and the ultrasonic cleaning power was 120W;
S7.电镀镍层:将步骤S6得到的金属化陶瓷件浸泡在镍的电镀液中进行电镀;S7. Electroplating nickel layer: the metallized ceramic piece obtained in step S6 is immersed in a nickel electroplating solution for electroplating;
电镀液由以下原料按量制备而成:NiSO4·6H2O 550g/L,NaCl 15g/L,H3BO3 25g/L,柔软剂BSI 22mL/L,润湿剂MA-80 1.5mL/L,稳定剂PVA-124 0.7mL/L,其余的为去离子水;The electroplating solution is prepared by the following raw materials: NiSO 4 6H 2 O 550g/L, NaCl 15g/L, H 3 BO 3 25g/L, softener BSI 22mL/L, wetting agent MA-80 1.5mL/ L, stabilizer PVA-124 0.7mL/L, the rest are deionized water;
电镀工艺为:采用267mL赫尔槽,取250mL镀液,阳极为100mm×60mm×3mm的纯镍板,阴极为100mm×65mm×0.3mm 的黄铜片,温度为55℃,pH为4,阴极电流密度为8A/dm2,电流2A,采用玻璃棒在阴极附近平行于阴极来回往复搅拌,移动速率为1次/s,时间7min。The electroplating process is as follows: 267mL Hull cell is used, 250mL plating solution is taken, the anode is a pure nickel plate of 100mm × 60mm × 3mm, the cathode is a brass sheet of 100mm × 65mm × 0.3mm, the temperature is 55 ° C, the pH is 4, and the cathode is The current density was 8A/dm 2 , the current was 2A, and a glass rod was used to stir back and forth parallel to the cathode near the cathode, the moving rate was 1 time/s, and the time was 7min.
S8.侧壁再次清洗:将步骤S7电镀后的金属化陶瓷件内侧壁和外侧壁进行再次机械抛光,表面粗糙度Ra为0.2微米;然后放入去离子水中超声清洗12min得到微波磁控管绝缘陶瓷环。S8. Re-cleaning of the side walls: the inner and outer side walls of the metallized ceramic pieces after electroplating in step S7 are mechanically polished again, and the surface roughness Ra is 0.2 microns; then put into deionized water for ultrasonic cleaning for 12 minutes to obtain microwave magnetron insulation Ceramic ring.
对比例2Comparative Example 2
与实施例3相比,助镀剂中未添加氯化铈,其他条件均不改变。Compared with Example 3, no cerium chloride was added to the plating flux, and other conditions were not changed.
S1. 助镀剂的配置:S1. Flux configuration:
助镀剂由以下原料按重量份制备而成:NH4Cl 100份、NaF 1份、K2ZrF6 100份、氯化镧0.05份和水400份,将上述原料按比例混合均匀,备用;The plating aid is prepared by weight of the following raw materials: 100 parts of NH 4 Cl, 1 part of NaF, 100 parts of K 2 ZrF 6 , 0.05 part of lanthanum chloride and 400 parts of water, and the above raw materials are uniformly mixed in proportion and used for later use;
S2. 高纯铝块、高纯铜块的处理:将高纯铝块和高纯铜块分别放入超声波发生器中,用80wt%乙醇溶液超声清洗掉表面的油脂,超声清洗功率为1000W,之后用50℃的12wt%NaOH溶液去除表面的氧化膜,最后用去离子水洗净后放入烘箱中烘干;高纯铝块中铝含量大于99%,所述高纯铜块中铜含量大于99%;S2. Treatment of high-purity aluminum block and high-purity copper block: Put the high-purity aluminum block and high-purity copper block into the ultrasonic generator respectively, and ultrasonically clean the surface grease with 80wt% ethanol solution. The ultrasonic cleaning power is 1000W, Then use 12wt% NaOH solution at 50°C to remove the oxide film on the surface, and finally wash it with deionized water and put it in an oven for drying; the aluminum content in the high-purity aluminum block is greater than 99%, and the copper content in the high-purity copper block greater than 99%;
S3. 预处理:将环形陶瓷基体浸泡在45℃的助镀剂中浸泡15min后取出,备用;S3. Pretreatment: soak the annular ceramic substrate in a plating flux at 45°C for 15 minutes, then take it out for use;
S4. 热浸镀铝、铜合金:将步骤S3中处理后的环形陶瓷基体放入石墨导轨中,将步骤S2中清洗后的高纯铝块、高纯铜块放入石墨坩埚中,用醋酸型有机硅密封胶将炉体密封,待密封胶干燥后,开始加热直至1300℃,同时通入速率为3.5L/min的高纯氮气(氮气体积分数大于99.995%),当石墨坩埚内的铝、铜融化后,将环形陶瓷基体从导轨下方入口匀速推入导轨,环形陶瓷基体通过石墨导轨的窗口与熔融铝铜合金液接触,之后与表面附着的铝铜合金液一起匀速推出并逐渐冷却,就能在陶瓷表面得到一层均匀的3-10微米厚的铝铜合金膜;S4. Hot-dip aluminum and copper alloy plating: put the annular ceramic substrate processed in step S3 into a graphite guide rail, put the high-purity aluminum block and high-purity copper block cleaned in step S2 into a graphite crucible, and use acetic acid The furnace body is sealed with type silicone sealant. After the sealant is dried, it starts to heat up to 1300°C, and at the same time, high-purity nitrogen gas (nitrogen volume fraction greater than 99.995%) at a rate of 3.5L/min is introduced. After the copper is melted, the annular ceramic base is pushed into the guide rail at a constant speed from the entrance below the guide rail, and the annular ceramic base is in contact with the molten aluminum-copper alloy liquid through the window of the graphite guide rail. A uniform 3-10 micron thick aluminum-copper alloy film can be obtained on the ceramic surface;
S5.双面热浸镀铝、铜合金:将步骤S4所得到的单面金属化环形陶瓷进行双面金属化;将环形陶瓷基体已经金属化的端面朝上放入石墨导轨中,将步骤S2中清洗后的高纯铝块、高纯铜块放入石墨坩埚中,用有机硅密封胶将炉体密封,待密封胶干燥后,开始加热直至1300℃,同时通入速率为3.5L/min的高纯氮气(氮气体积分数大于99.995%),当石墨坩埚内的铝、铜融化后,将环形陶瓷基体从导轨下方入口匀速推入导轨,环形陶瓷基体通过石墨导轨的窗口与熔融铝铜合金液接触,之后与表面附着的铝铜合金液一起匀速推出并逐渐冷却,就能在陶瓷表面得到一层均匀的3-10微米厚的铝铜合金膜;S5. Double-sided hot-dip aluminum and copper alloy plating: perform double-sided metallization on the single-sided metallized annular ceramic obtained in step S4; The high-purity aluminum block and high-purity copper block cleaned in S2 are put into a graphite crucible, and the furnace body is sealed with silicone sealant. min of high-purity nitrogen (the volume fraction of nitrogen is greater than 99.995%), when the aluminum and copper in the graphite crucible are melted, the annular ceramic substrate is pushed into the guide rail at a constant speed from the entrance below the guide rail, and the annular ceramic substrate passes through the window of the graphite guide rail. The alloy liquid is contacted, and then pushed out together with the aluminum-copper alloy liquid attached to the surface at a uniform speed and gradually cooled, a uniform layer of aluminum-copper alloy film with a thickness of 3-10 microns can be obtained on the ceramic surface;
S6.侧壁清洗:将步骤S5得到的双面金属化环形陶瓷内侧壁和外侧壁进行机械抛光,将内侧壁和外侧壁上流涏的铝铜合金膜打磨掉,然后放入水中超声清洗10-15min得到金属化陶瓷件,超声清洗功率为120W;S6. Side wall cleaning: mechanically polish the inner and outer side walls of the double-sided metallized annular ceramics obtained in step S5, and polish off the aluminum-copper alloy film on the inner and outer side walls, and then put them into water for ultrasonic cleaning for 10- The metallized ceramic parts were obtained in 15 minutes, and the ultrasonic cleaning power was 120W;
S7.电镀镍层:将步骤S6得到的金属化陶瓷件浸泡在镍的电镀液中进行电镀;S7. Electroplating nickel layer: the metallized ceramic piece obtained in step S6 is immersed in a nickel electroplating solution for electroplating;
电镀液由以下原料按量制备而成:NiSO4·6H2O 550g/L,NaCl 15g/L,H3BO3 25g/L,柔软剂BSI 22mL/L,润湿剂MA-80 1.5mL/L,稳定剂PVA-124 0.7mL/L,其余的为去离子水;The electroplating solution is prepared by the following raw materials: NiSO 4 6H 2 O 550g/L, NaCl 15g/L, H 3 BO 3 25g/L, softener BSI 22mL/L, wetting agent MA-80 1.5mL/ L, stabilizer PVA-124 0.7mL/L, the rest are deionized water;
电镀工艺为:采用267mL赫尔槽,取250mL镀液,阳极为100mm×60mm×3mm的纯镍板,阴极为100mm×65mm×0.3mm 的黄铜片,温度为55℃,pH为4,阴极电流密度为8A/dm2,电流2A,采用玻璃棒在阴极附近平行于阴极来回往复搅拌,移动速率为1次/s,时间7min。The electroplating process is as follows: 267mL Hull cell is used, 250mL plating solution is taken, the anode is a pure nickel plate of 100mm × 60mm × 3mm, the cathode is a brass sheet of 100mm × 65mm × 0.3mm, the temperature is 55 ° C, the pH is 4, and the cathode is The current density was 8A/dm 2 , the current was 2A, and a glass rod was used to stir back and forth parallel to the cathode near the cathode, the moving rate was 1 time/s, and the time was 7min.
S8.侧壁再次清洗:将步骤S7电镀后的金属化陶瓷件内侧壁和外侧壁进行再次机械抛光,表面粗糙度Ra为0.2微米;然后放入去离子水中超声清洗12min得到微波磁控管绝缘陶瓷环。S8. Re-cleaning of the side walls: the inner and outer side walls of the metallized ceramic pieces after electroplating in step S7 are mechanically polished again, and the surface roughness Ra is 0.2 microns; then put into deionized water for ultrasonic cleaning for 12 minutes to obtain microwave magnetron insulation Ceramic ring.
对比例3Comparative Example 3
与实施例3相比,环形陶瓷基体未进行电镀镍工艺。Compared with Example 3, the ring-shaped ceramic substrate was not subjected to the nickel electroplating process.
S1. 助镀剂的配置:S1. Flux configuration:
助镀剂由以下原料按重量份制备而成:NH4Cl 100份、NaF 1份、K2ZrF6 100份、氯化铈0.05份、氯化镧0.05份和水400份,将上述原料按比例混合均匀,备用;The plating aid is prepared by weight of the following raw materials: 100 parts of NH 4 Cl, 1 part of NaF, 100 parts of K 2 ZrF 6 , 0.05 part of cerium chloride, 0.05 part of lanthanum chloride and 400 parts of water. The ratio is mixed evenly, and it is ready for use;
S2. 高纯铝块、高纯铜块的处理:将高纯铝块和高纯铜块分别放入超声波发生器中,用80wt%乙醇溶液超声清洗掉表面的油脂,超声清洗功率为1000W,之后用50℃的12wt%NaOH溶液去除表面的氧化膜,最后用去离子水洗净后放入烘箱中烘干;高纯铝块中铝含量大于99%,所述高纯铜块中铜含量大于99%;S2. Treatment of high-purity aluminum block and high-purity copper block: Put the high-purity aluminum block and high-purity copper block into the ultrasonic generator respectively, and ultrasonically clean the surface grease with 80wt% ethanol solution. The ultrasonic cleaning power is 1000W, Then use 12wt% NaOH solution at 50°C to remove the oxide film on the surface, and finally wash it with deionized water and put it in an oven for drying; the aluminum content in the high-purity aluminum block is greater than 99%, and the copper content in the high-purity copper block greater than 99%;
S3. 预处理:将环形陶瓷基体浸泡在45℃的助镀剂中浸泡15min后取出,备用;S3. Pretreatment: soak the annular ceramic substrate in a plating flux at 45°C for 15 minutes, then take it out for use;
S4. 热浸镀铝、铜合金:将步骤S3中处理后的环形陶瓷基体放入石墨导轨中,将步骤S2中清洗后的高纯铝块、高纯铜块放入石墨坩埚中,用醋酸型有机硅密封胶将炉体密封,待密封胶干燥后,开始加热直至1300℃,同时通入速率为3.5L/min的高纯氮气(氮气体积分数大于99.995%),当石墨坩埚内的铝、铜融化后,将环形陶瓷基体从导轨下方入口匀速推入导轨,环形陶瓷基体通过石墨导轨的窗口与熔融铝铜合金液接触,之后与表面附着的铝铜合金液一起匀速推出并逐渐冷却,就能在陶瓷表面得到一层均匀的3-10微米厚的铝铜合金膜;S4. Hot-dip aluminum and copper alloy plating: put the annular ceramic substrate processed in step S3 into a graphite guide rail, put the high-purity aluminum block and high-purity copper block cleaned in step S2 into a graphite crucible, and use acetic acid The furnace body is sealed with type silicone sealant. After the sealant is dried, it starts to heat up to 1300°C, and at the same time, high-purity nitrogen gas (nitrogen volume fraction greater than 99.995%) at a rate of 3.5L/min is introduced. After the copper is melted, the annular ceramic base is pushed into the guide rail at a constant speed from the entrance below the guide rail, and the annular ceramic base is in contact with the molten aluminum-copper alloy liquid through the window of the graphite guide rail. A uniform 3-10 micron thick aluminum-copper alloy film can be obtained on the ceramic surface;
S5.双面热浸镀铝、铜合金:将步骤S4所得到的单面金属化环形陶瓷进行双面金属化;将环形陶瓷基体已经金属化的端面朝上放入石墨导轨中,将步骤S2中清洗后的高纯铝块、高纯铜块放入石墨坩埚中,用有机硅密封胶将炉体密封,待密封胶干燥后,开始加热直至1300℃,同时通入速率为3.5L/min的高纯氮气(氮气体积分数大于99.995%),当石墨坩埚内的铝、铜融化后,将环形陶瓷基体从导轨下方入口匀速推入导轨,环形陶瓷基体通过石墨导轨的窗口与熔融铝铜合金液接触,之后与表面附着的铝铜合金液一起匀速推出并逐渐冷却,就能在陶瓷表面得到一层均匀的3-10微米厚的铝铜合金膜;S5. Double-sided hot-dip aluminum and copper alloy plating: perform double-sided metallization on the single-sided metallized annular ceramic obtained in step S4; The high-purity aluminum block and high-purity copper block cleaned in S2 are put into a graphite crucible, and the furnace body is sealed with silicone sealant. min of high-purity nitrogen (the volume fraction of nitrogen is greater than 99.995%), when the aluminum and copper in the graphite crucible are melted, the annular ceramic substrate is pushed into the guide rail at a constant speed from the entrance below the guide rail, and the annular ceramic substrate passes through the window of the graphite guide rail. The alloy liquid is contacted, and then pushed out together with the aluminum-copper alloy liquid attached to the surface at a uniform speed and gradually cooled, a uniform layer of aluminum-copper alloy film with a thickness of 3-10 microns can be obtained on the ceramic surface;
S6.侧壁清洗:将步骤S5得到的双面金属化环形陶瓷内侧壁和外侧壁进行机械抛光,将内侧壁和外侧壁上流涏的铝铜合金膜打磨掉,然后放入水中超声清洗10-15min得到金属化陶瓷件,超声清洗功率为120W;S6. Side wall cleaning: mechanically polish the inner and outer side walls of the double-sided metallized annular ceramics obtained in step S5, and polish off the aluminum-copper alloy film on the inner and outer side walls, and then put them into water for ultrasonic cleaning for 10- The metallized ceramic parts were obtained in 15 minutes, and the ultrasonic cleaning power was 120W;
测试例1Test Example 1
将本发明实施例1-3和对比例1-3制备的金属化陶瓷进行性能测试,结果见表1。The metallized ceramics prepared in Examples 1-3 of the present invention and Comparative Examples 1-3 were tested for performance, and the results are shown in Table 1.
表1Table 1
由上表可知,本发明方法制备的金属化陶瓷具有良好的抗拉强度,且制成磁控管后使用寿命明显延长,具有良好的耐腐蚀性和耐热性能。It can be seen from the above table that the metallized ceramic prepared by the method of the present invention has good tensile strength, and the service life is obviously prolonged after being made into a magnetron, and it has good corrosion resistance and heat resistance.
对比例1和对比例2中分别未添加氯化镧和氯化铈,其使得白瓷表面性能下降从而形成铝铜膜层时结构松散,未能紧密连接,从而使得得到的金属化陶瓷性能下降;In Comparative Example 1 and Comparative Example 2, lanthanum chloride and cerium chloride were not added respectively, which reduced the surface performance of white porcelain, so that the structure of the aluminum-copper film layer was loose and failed to be tightly connected, thereby reducing the performance of the obtained metallized ceramic. ;
对比例3采用热浸镀铝、铜合金层,仅仅有单层金属层,金属膜较薄,从而使得制得的磁控管使用寿命大大降低,且耐腐蚀性和耐热性能不佳。Comparative Example 3 uses hot-dip aluminum and copper alloy layers, only has a single metal layer, and the metal film is relatively thin, which greatly reduces the service life of the obtained magnetron, and has poor corrosion resistance and heat resistance.
与现有技术相比,本发明中,由于热浸镀铝、铜合金液温度较高,铝易生氧化铝膜,所以使用助镀剂NH4Cl,并引入氟化物K2ZrF6 和NaF,能在白瓷(环形陶瓷基体)表面形成连续完整且无孔隙的保护膜;同时浸铝、铜合金液时能立即从白瓷(环形陶瓷基体)表面脱除;对出现的一些氧化物有吸附熔解作用,同时,对铝液无污染,加入稀土金属氯化物,如氯化铈、氯化镧,可以使从而使晶粒细化而提高白瓷(环形陶瓷基体)的表面性能,且氯化铈、氯化镧的添加具有协同增效的作用;Compared with the prior art, in the present invention, due to the high temperature of hot dip aluminum plating and copper alloy solution, aluminum is prone to form aluminum oxide film, so plating flux NH 4 Cl is used, and fluorides K 2 ZrF 6 and NaF are introduced. , can form a continuous, complete and non-porous protective film on the surface of white porcelain (annular ceramic substrate); at the same time, it can be removed from the surface of white porcelain (annular ceramic substrate) immediately when immersed in aluminum and copper alloy solutions; some oxides appear. At the same time, it has no pollution to the aluminum liquid. Adding rare earth metal chlorides, such as cerium chloride and lanthanum chloride, can refine the grains and improve the surface properties of white porcelain (ring ceramic matrix). The addition of cerium and lanthanum chloride has a synergistic effect;
本发明采用热浸镀铝铜合金与陶瓷晶相颗粒合理匹配技术,在不提高烧结温度的前提下,使金属化铝铜合金层在烧结时能与陶瓷体形成紧密结合,然后再在金属化铝铜合金层上电镀一层金属化镍层, 从而大大提高了陶瓷金属化层的表面质量和抗拉强度,且金属层均匀、细腻;The invention adopts the reasonable matching technology of hot-dip aluminum-copper alloy and ceramic crystal phase particles, and without increasing the sintering temperature, the metallized aluminum-copper alloy layer can form a close bond with the ceramic body during sintering, and then the metallized aluminum-copper alloy layer can be closely combined with the ceramic body during sintering. A metallized nickel layer is electroplated on the aluminum-copper alloy layer, which greatly improves the surface quality and tensile strength of the ceramic metallized layer, and the metal layer is uniform and delicate;
本发明制备工艺简单,热浸镀铝铜合金时覆盖率高,触角可以降低至 0°,达到“完美润湿”,产生铝铜合金液与环形陶瓷基体表面的“超常润湿”现象;进一步在合金层表面电镀一层金属镍层,有效提高陶瓷金属层的壁厚,避免由于磁控管内磁场产生电流过大致使陶瓷壁被击穿或产生裂痕的现象发生,延长了磁控管的使用寿命。The preparation process of the invention is simple, the coverage rate is high during hot-dip aluminum-copper alloy plating, the antenna angle can be reduced to 0°, "perfect wetting" is achieved, and the phenomenon of "extraordinary wetting" between the aluminum-copper alloy liquid and the surface of the annular ceramic substrate is generated; further Electroplating a metal nickel layer on the surface of the alloy layer can effectively increase the wall thickness of the ceramic metal layer, avoid the phenomenon that the ceramic wall is broken down or cracked due to the excessive current generated by the magnetic field in the magnetron, and prolong the life of the magnetron. service life.
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the scope of the present invention. within the scope of protection.
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Denomination of invention: Microwave magnetron insulating ceramic ring Effective date of registration: 20210722 Granted publication date: 20201023 Pledgee: Loudi Xinglou financing Company limited by guarantee Pledgor: HUNAN MEICHENG CERAMIC TECHNOLOGY Co.,Ltd. Registration number: Y2021430000032 |
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