CN210379104U - High-power flip LED chip - Google Patents
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- CN210379104U CN210379104U CN201921320401.XU CN201921320401U CN210379104U CN 210379104 U CN210379104 U CN 210379104U CN 201921320401 U CN201921320401 U CN 201921320401U CN 210379104 U CN210379104 U CN 210379104U
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Abstract
The utility model discloses a high-power flip-chip LED chip, including substrate, epitaxial layer, Ag reflection stratum, insulating layer, Al layer, first electrode and second electrode, insulating layer and Al layer form the ODR structure. The utility model discloses utilize the Al layer to fill Ag reflection stratum and can not reflect region, increase the holistic reflection efficiency of chip, improve the light-emitting efficiency of chip.
Description
Technical Field
The utility model relates to a emitting diode technical field especially relates to a high-power flip-chip LED chip.
Background
In the flip LED chip, in order to improve light extraction efficiency, an Ag reflective structure and a DBR reflective structure are commonly used. The DBR reflective structure is generally formed by two materials with different refractive indexes alternately, the manufacturing process is complex and time-consuming, and the reflectivity is not as good as that of the Ag reflective structure. However, the Ag reflective structure is easily oxidized, and another layer of other metal needs to be arranged for protection, so that a part of the region between the Ag reflective structure and the N-type layer is not reflective, thereby reducing the reflectivity and the light extraction efficiency of the chip.
The patent with publication number CN106098893A discloses a flip-chip gallium nitride-based light emitting diode with a simple ODR structure and a preparation method thereof, and the patent adopts an Ag bonding pad and a DBR structure to form the ODR structure to improve the reflectivity of incident light at different angles.
If the large-size high-power flip LED chip adopts a DBR (distributed Bragg reflector) structure, the chip is cut and sorted, and the core particles are cracked due to overlarge stress. And verified that SiO2The ODR system formed by/Ag can cause the shedding of the Ag layer, and the bonding force of the two is poor.
Disclosure of Invention
The utility model aims to solve the technical problem that a high-power flip-chip LED chip is provided, forms the ODR structure to improve flip-chip LED chip's luminous efficiency.
In order to solve the technical problem, the utility model provides a high-power flip-chip LED chip, including substrate, epitaxial layer, Ag reflection stratum, insulating layer, Al layer, first electrode and second electrode, insulating layer and Al layer form the ODR structure;
the epitaxial layer is provided with a first hole, the Ag reflecting layer is arranged on the epitaxial layer and is provided with a second hole, the second hole is communicated with the first hole, and the diameter of the second hole is larger than that of the first hole;
the insulating layer is arranged on the Ag reflecting layer and filled in the second hole and the first hole, the insulating layer is provided with a third hole and a fourth hole, the third hole is positioned in the first hole and the second hole, and the diameter of the third hole is smaller than that of the first hole;
the Al layer is arranged on the insulating layer and is positioned in a region between the third hole and the Ag reflecting layer;
the first electrode is arranged in the third hole, and the second electrode is arranged in the fourth hole.
As an improvement of the above scheme, the epitaxial layer includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially disposed on the substrate, and the first hole penetrates through the second semiconductor layer and the active layer and extends to the first semiconductor layer.
As an improvement of the above scheme, the second hole penetrates through the Ag reflective layer, and the diameter of the second hole is 5% to 10% larger than that of the first hole.
As an improvement of the above, the thickness of the insulating layer > the thickness of the Ag reflective layer > the thickness of the Al layer.
As an improvement of the scheme, the thickness of the insulating layer is 3-5 times greater than that of the Ag reflecting layer, and the thickness of the Ag reflecting layer is 3-10% greater than that of the Al layer.
As an improvement of the scheme, the thickness of the insulating layer is 4000-6000 angstroms, the thickness of the Ag reflecting layer is 1000-2000 angstroms, and the thickness of the Al layer is 1000-2000 angstroms.
As an improvement of the above, the insulating layer is made of SiO2、Si3N4、SiOxNyIs made of aluminium.
As an improvement of the above, the insulating layer is made of SiO2To make, the Al layer is made of aluminum.
As an improvement of the above scheme, the first electrode extends from the third hole to the Al layer and the insulating layer, and a passivation layer is disposed between the first electrode and the second electrode, which are insulated from each other.
Implement the utility model discloses, following beneficial effect has:
the utility model provides a high-power flip LED chip, including substrate, epitaxial layer, Ag reflection stratum, insulating layer, Al layer, first electrode and second electrode, insulating layer and Al layer form the ODR structure;
the utility model discloses utilize the Al layer to fill Ag reflection stratum and can not reflect region, increase the holistic reflection efficiency of chip, improve the light-emitting efficiency of chip.
The utility model adopts an Al layer and SiO layer2The insulating layer is used as the ODR structure of the utility model, because Al and SiO2Is good and therefore is not prone to falling.
The utility model discloses position and size to the Al layer have further been injectd, furthest improves the light-emitting efficiency of chip when practicing thrift the cost.
Drawings
Fig. 1 is a schematic structural diagram of an LED chip according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a second LED chip according to an embodiment of the present invention;
fig. 3a is a schematic structural diagram of an LED chip after a first hole is formed according to an embodiment of the present invention;
fig. 3b is a schematic structural diagram of an LED chip after forming a second hole according to an embodiment of the present invention;
fig. 3c is a schematic structural diagram of an LED chip according to an embodiment of the present invention after forming a third hole and a fourth hole;
fig. 3d is a schematic structural diagram of an LED chip after an Al layer is formed.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail with reference to the accompanying drawings.
Referring to fig. 1, the present invention provides a large-sized high-power flip-chip LED chip, which includes a substrate 10, an epitaxial layer, an Ag reflective layer 30, an insulating layer 40, an Al layer 50, a first electrode 61, and a second electrode (not shown). The Al layer 50 and the insulating layer 40 form an ODR structure;
the epitaxial layer includes a first semiconductor layer 21, an active layer 22, a second semiconductor layer 23 and a first hole, which are sequentially disposed on the substrate 10. Specifically, the first hole penetrates through the second semiconductor layer 23 and the active layer 22 and extends to the first semiconductor layer 21. Preferably, the first hole is located at the geometric center of the epitaxial layer, but is not limited thereto. In other embodiments of the application, the first hole may be provided in plurality.
The Ag reflective layer 30 is made of silver and is disposed on the second semiconductor layer 23. The Ag reflective layer 30 is used to reflect the light emitted from the active layer 22 toward the substrate side, so as to improve the light extraction efficiency of the chip.
The utility model discloses a Ag reflection stratum 30 is equipped with the second hole, the second hole is located the top of first hole to communicate with first hole.
It should be noted that the diameter and number of the first holes, i.e., the MESA aperture, have an influence on the light emitting efficiency and the current distribution. The aperture of the second hole is larger than that of the first hole because the metal of the Ag reflecting layer falls into the quantum well to cause short circuit and burn out core grains.
Since the aperture of the second hole is larger than that of the first hole, the larger the aperture of the first hole is, the smaller the area of the Ag reflective layer is, and the lower the reflectivity is. Preferably, the diameter of the first holes is 40-60 μm. The diameter of the second holes is larger than that of the first holes by 5-10%.
The insulating layer 40 is made of SiO2、Si3N4、SiOxNyOne or more of them. Preferably, the insulating layer 40 is made of SiO2And (4) preparing. The utility model discloses an insulating layer 40 sets up on Ag reflection stratum 30 and fills in first hole and second hole. Specifically, the insulating layer 40 located in the first hole and the second hole is provided with a third hole. The third hole is located at the geometric center of the first hole and the second hole, but is not limited thereto.
The Al layer 50 is made of aluminum and is disposed on the insulating layer 40. It should be noted that, in the existing flip-chip LED chip, the insulating layer 40 serves to protect the first hole and the Ag reflective layer; the Al layer 50 is used to reflect light emitted from the active layer 22 toward the substrate side to improve the light extraction efficiency of the chip.
The utility model discloses Al layer 50's primary function is to fill up Ag reflection stratum 30 can not the reflection region (the region of second hole), increases reflection efficiency, and wherein, Ag and SiO2Has no Al and SiO2The adhesive force of the Ag reflecting layer is good, the aperture diameter of the Ag reflecting layer is larger than the MESA aperture diameter as much as possible, and the Ag is prevented from falling to a quantum well region to cause electric leakage. But do notSuch design can reduce the area of some metal reflection stratum to as for the promotion that chip luminance can not be fine, the utility model discloses an ODR structure just in time can compensate this point.
In order to further improve the adhesion between the Al layer and the insulating layer, the reflection efficiency of the Al layer and the Ag reflecting layer, and a certain proportional relation among the insulating layer, the Ag reflecting layer and the Al layer. Preferably, the thickness of the insulating layer is 3-5 times greater than that of the Ag reflecting layer, and the thickness of the Ag reflecting layer is 3-10% greater than that of the Al layer.
If the thickness of the insulating layer exceeds the thickness of the Al layer in the above range, the reflection efficiency of the Al layer is affected; if the amount is less than the above range, the adhesion between the two is impaired. Furthermore, the thickness ratio of the Al layer to the Ag reflecting layer is smaller than or larger than the range, which affects the light-emitting uniformity of the chip.
The utility model discloses Al layer 50 forms the ODR structure with insulating layer 40 and is used for reflecting away the light that active layer 22 sent towards substrate one side to improve the light-emitting efficiency of chip. The utility model discloses an ODR structure can improve the reflectivity to more than 97%, and the luminance of chip improves about 1.5%.
The reflectivity of the ODR structure is affected not only by the material and structure, but also by the thickness. In order to improve the reflectivity and the holistic light-emitting efficiency of chip of ODR structure, the utility model discloses material and the material characteristic of Ag reflection stratum according to the ODR structure to prescribe a limit to the thickness of ODR structure. Preferably, the thickness of the insulating layer 40 > the thickness of the Ag reflective layer 30 > the thickness of the Al layer 50. Specifically, the thickness of the insulating layer is 4000-6000 angstroms, the thickness of the Ag reflecting layer is 1000-2000 angstroms, and the thickness of the Al layer is 1000-2000 angstroms. Experiments prove that the reflectivity of the metal reflecting layer is increased and then reduced along with the change of the film thickness, the reflectivity is maximum when the thicknesses of the Al layer and the Ag reflecting layer are 1000-2000 angstroms, and the SiO is2Has light absorption, the brightness is reduced when the thickness is too thick, the leakage current is caused when the thickness is too thin, and the effect is best between 4000 and 6000 angstroms.
The first electrode 61 of the present invention is filled in the third hole and is electrically connected to the first semiconductor layer 21. Preferably, the first electrode 61 extends from the third hole onto the insulating layer 40. The second electrode is electrically connected to the second semiconductor layer 23, and the first electrode and the second electrode are insulated from each other.
In order to guarantee first electrode and second insulation mutual insulation, the utility model discloses a chip still includes the passivation layer, the passivation layer is made by insulating material, sets up on first electrode, the second electrode sets up on the passivation layer, and is connected with second semiconductor layer electrically conductive. Specifically, the passivation layer is provided with an exposed region to expose the first electrode. Preferably, the second electrode of the present invention penetrates the passivation layer and the insulating layer, and is electrically connected to the Ag reflective layer.
Referring to fig. 2, as another preferred embodiment of the present invention, the present invention provides a large-sized high-power flip-chip LED chip further comprising a current spreading layer 24, wherein the current spreading layer 24 is disposed between the second semiconductor layer 23 and the Ag reflective layer 30. The current expansion layer is provided with a fourth hole, wherein the fourth hole is communicated with the first hole and the second hole, and the diameter of the fourth hole is between the first hole and the second hole.
Correspondingly, the utility model also provides a manufacturing method of large-size high-power flip-chip LED chip, including following step:
firstly, forming an epitaxial layer and a first hole on a substrate;
referring to fig. 3a, an epitaxial layer including a first semiconductor layer 21, an active layer 22, and a second semiconductor layer 23 sequentially disposed on a substrate 10 is formed on the substrate 10 using an MOCVD process.
And etching the epitaxial layer to form a first hole 24 which penetrates through the second semiconductor layer 23 and the active layer 22 and extends to the first semiconductor layer 21. Preferably, the first hole is located at the geometric center of the epitaxial layer, but is not limited thereto. In other embodiments of the application, the first hole may be provided in plurality.
Secondly, forming an Ag reflecting layer and a second hole on the second semiconductor layer;
referring to fig. 3b, an Ag reflective layer 30 is formed on the second semiconductor layer 23 by magnetron sputtering or evaporation.
And etching the Ag reflecting layer 30 to form a second hole 31, wherein the second hole 31 is positioned above the first hole 24 and is communicated with the first hole 24. Preferably, the diameter of the second bore hole 31 is larger than the diameter of the first bore hole 24. Preferably, the diameter of the second holes is larger than the diameter of the first holes by 5-10%.
Thirdly, forming an insulating layer and a third hole;
referring to fig. 3c, an insulating layer 40 is formed on the Ag reflective layer 30, and the insulating layer 40 is formed along the Ag reflective layer 30 into the second hole 31 and the first hole 23.
Etching the insulating layer 40 to expose the first semiconductor layer 21 to form a third hole 41, exposing the Ag reflective layer 30 to form a fourth hole (not shown), wherein the third hole 41 is located in the first hole 24 and the second hole 31, and the diameter of the third hole 41 is smaller than that of the first hole 24. In addition, an insulating layer is remained on the sidewall of the third hole 41.
Fourthly, forming an Al layer on the insulating layer;
referring to fig. 3d, an Al layer 50 is formed on the insulating layer 40. Preferably, the Al layer 50 is located at a region between the third hole 41 and the Ag reflective layer 30.
Fifthly, forming a first electrode and a second electrode;
referring to fig. 1, a first electrode 61 is formed by depositing metal in the third hole 41, and a second electrode (not shown) is formed by depositing metal in the fourth hole. Preferably, the first electrode 61 may extend from the third hole 41 onto the insulating layer 40.
The above disclosure is only a preferred embodiment of the present invention, and certainly should not be taken as limiting the scope of the invention, which is defined by the claims and their equivalents.
Claims (9)
1. A high-power flip LED chip is characterized by comprising a substrate, an epitaxial layer, an Ag reflecting layer, an insulating layer, an Al layer, a first electrode and a second electrode, wherein the insulating layer and the Al layer form an ODR structure;
the epitaxial layer is provided with a first hole, the Ag reflecting layer is arranged on the epitaxial layer and is provided with a second hole, the second hole is communicated with the first hole, and the diameter of the second hole is larger than that of the first hole;
the insulating layer is arranged on the Ag reflecting layer and filled in the second hole and the first hole, the insulating layer is provided with a third hole and a fourth hole, the third hole is positioned in the first hole and the second hole, and the diameter of the third hole is smaller than that of the first hole;
the Al layer is arranged on the insulating layer and is positioned in a region between the third hole and the Ag reflecting layer;
the first electrode is arranged in the third hole, and the second electrode is arranged in the fourth hole.
2. The high power flip-chip LED chip of claim 1, wherein the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer sequentially disposed on the substrate, and the first hole extends through the second semiconductor layer and the active layer and to the first semiconductor layer.
3. The high power flip-chip LED chip of claim 2, wherein the second hole penetrates the Ag reflective layer, and the diameter of the second hole is 5% to 10% larger than the diameter of the first hole.
4. The high power flip LED chip of claim 1, wherein the thickness of the insulating layer > the thickness of the Ag reflective layer > the thickness of the Al layer.
5. The high-power flip-chip LED chip according to claim 4, wherein the thickness of the insulating layer is 3 to 5 times greater than that of the Ag reflecting layer, and the thickness of the Ag reflecting layer is 3 to 10 percent greater than that of the Al layer.
6. The high-power flip-chip LED chip as claimed in claim 1, wherein the thickness of the insulating layer is 4000-6000 angstroms, the thickness of the Ag reflective layer is 1000-2000 angstroms, and the thickness of the Al layer is 1000-2000 angstroms.
7. The high power flip LED chip of claim 1 wherein the insulating layer is made of SiO2、Si3N4、SiOxNyIs made of aluminum.
8. The high power flip LED chip of claim 1 wherein the insulating layer is made of SiO2To make, the Al layer is made of aluminum.
9. The high power flip LED chip of claim 1 wherein the first electrode extends from the third via to the Al layer and the insulating layer with a passivation layer disposed therebetween, the first electrode and the second electrode being insulated from each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921320401.XU CN210379104U (en) | 2019-08-14 | 2019-08-14 | High-power flip LED chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921320401.XU CN210379104U (en) | 2019-08-14 | 2019-08-14 | High-power flip LED chip |
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| CN210379104U true CN210379104U (en) | 2020-04-21 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491981A (en) * | 2019-08-14 | 2019-11-22 | 佛山市国星半导体技术有限公司 | A kind of high-power flip LED chips and preparation method thereof |
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- 2019-08-14 CN CN201921320401.XU patent/CN210379104U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491981A (en) * | 2019-08-14 | 2019-11-22 | 佛山市国星半导体技术有限公司 | A kind of high-power flip LED chips and preparation method thereof |
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