CN100483754C - Crystal coating light-emitting diode and producing method thereof - Google Patents
Crystal coating light-emitting diode and producing method thereof Download PDFInfo
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- CN100483754C CN100483754C CNB2005100529590A CN200510052959A CN100483754C CN 100483754 C CN100483754 C CN 100483754C CN B2005100529590 A CNB2005100529590 A CN B2005100529590A CN 200510052959 A CN200510052959 A CN 200510052959A CN 100483754 C CN100483754 C CN 100483754C
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Abstract
A method for preparing luminous diode of polycrystalline type includes using soft transparent binding layer to stick transparent base material with luminous diode polycrystalline structure on base material, then removing off base material to transfer luminous diode polycrystalline structure on transparent base material, platform - etching said structure to let said structure form on the first and the second top surfaces and simultaneously to expose n type and p type of semiconductor layers, forming metal reflecting and blocking layer on said structure and preparing electrode on blocking layer.
Description
Technical field
The present invention relates to a kind of Light-emitting Diode And Its Making Method of crystal covering type, and be particularly related to a kind of Light-emitting Diode And Its Making Method that improves the crystal covering type of light output intensity.
Background technology
Light-emitting diode (Light Emitting Diode; LED) production cost is low, simple in structure because of having, low power consumption, volume is little and install to be easy to advantage, and applies in a large number in lighting source and the display technology.
General traditional light-emitting diode, be directly the light-emitting diode epitaxial structure to be made on the base material, and cathode electrode and anode electrode are made in light-emitting diode epitaxial structure side and base material side respectively, such structure, though have preferable CURRENT DISTRIBUTION effect, can cause the LED package area to increase.Therefore, developed the light-emitting diode of crystal covering type (flip chip) in recent years gradually.
The light-emitting diode of crystal covering type, make p type semiconductor layer and n type semiconductor layer in the light-emitting diode epitaxial structure, be exposed to the same side of light-emitting diode epitaxial structure, the cathode and anode electrode can be made on the same side of light-emitting diode epitaxial structure, thereby, can adopt and cover crystal type encapsulation, cover with the light-emitting diode that directly will be provided with the cathode and anode electrode and place on the encapsulation scolder (solder).So, can exempt the demand that adopts conventional metals backguy (wire bonding), and then effectively dwindle package area, and promote the reliability of light-emitting diode simultaneously.
Yet,, when upwards exporting, can be absorbed by the base material of top, and can't penetrate base material, and then export the light-emitting diode outside to because the light-emitting diode of crystal covering type is luminous.So the light-emitting diode of crystal covering type,, cause the light output intensity of the light-emitting diode of crystal covering type to reduce on the contrary though have advantage in the encapsulation.
In addition, because the brightness of light-emitting diode promotes, all the time be the main development trend of present led technology, but generally except the part that lumination of light emitting diode directly upwards penetrates, other direction luminous then can part be absorbed by light-emitting diode below material, and can't be utilized the source that becomes light output effectively, especially the light-emitting diode of crystal covering type is luminous, to the part that light-emitting diode below is penetrated, is as easy as rolling off a logly stopped by electrode or produces scattering.Therefore, the light output intensity of light-emitting diode depends primarily on the characteristics of luminescence of light-emitting diode itself, and makes the lifting of light-emitting diode light output intensity be restricted.
Summary of the invention
The light-emitting diode of a kind of crystal covering type provided by the present invention not only can be kept the advantage of crystal covering type structure, more can effectively increase the light output intensity of light-emitting diode, presents with quality and the brightness that significantly improves light-emitting diode.
The light-emitting diode of a kind of crystal covering type provided by the present invention has the metallic reflector of high reflectance, can make the light of light-emitting diode epitaxial structure to the electrode emission, and reflected back light-emitting diode inside increases the brightness of light-emitting diode.
In the light-emitting diode of a kind of crystal covering type provided by the present invention, the interface of light-emitting diode epitaxial structure and transparency carrier is the surface of an alligatoring, by its rough characteristic, improve the phenomenon of light total reflection, and then improve the light taking-up efficient of light-emitting diode.Even the surface of transparent base also has the surface of alligatoring, reaching the effect of improving light total reflection equally, and then more helps the lifting of light-emitting diode light output intensity.
The manufacture method of the light-emitting diode of crystal covering type provided by the present invention can be converted to supporting substrate the transparent base of light-permeable, so that the internal illumination of light-emitting diode penetrates transparent base in a large number, and exports the light-emitting diode outside smoothly to.So, not only possess the advantage of crystal covering type structure, and also effectively promoted the light output intensity of the light-emitting diode of crystal covering type.
The manufacture method of the light-emitting diode of crystal covering type provided by the present invention, overturn via secondary, make second semiconductor layer (p type semiconductor layer) be positioned at lower floor, first semiconductor layer is positioned at upper strata (n type semiconductor layer), the distance of luminescence activity layer and transparent base increases, improve the phenomenon of light total reflection, make luminous can being effectively utilized in the light-emitting diode, significantly to increase the light output intensity of light-emitting diode.
The light-emitting diode of crystal covering type of the present invention, comprise transparent base, light-emitting diode epitaxial structure, metallic reflector, first electrode and second electrode, wherein the light-emitting diode epitaxial structure is positioned on the transparent base, and the light-emitting diode epitaxial structure has first upper surface and second upper surface, and first upper surface is different doping types with second upper surface.Metallic reflector is positioned on first upper surface and second upper surface of light-emitting diode epitaxial structure.First electrode is positioned on the metallic reflector, and the below of first electrode is first upper surface, and second electrode is positioned on the metallic reflector, and the below of second electrode is second upper surface.
A kind of manufacture method of the light-emitting diode of crystal covering type of the present invention comprises: form a light-emitting diode epitaxial structure earlier on a base material; Utilize a soft transparent adhesive linkage afterwards, a transparent base is fitted on the light-emitting diode epitaxial structure; Remove base material afterwards, to expose the light-emitting diode epitaxial structure; Etching light-emitting diode epitaxial structure to remove part light-emitting diode epitaxial structure to a degree of depth, makes the light-emitting diode epitaxial structure have first upper surface, and second upper surface, and wherein first upper surface is different doping types with second upper surface; Form metallic reflector, be positioned on first upper surface of light-emitting diode epitaxial structure, and on second upper surface; Make first electrode and second electrode at last respectively, be positioned on the metallic reflector, wherein the below of first electrode is first upper surface of light-emitting diode epitaxial structure, and the below of second electrode then is second upper surface of light-emitting diode epitaxial structure.
The another kind of manufacture method of the light-emitting diode of crystal covering type of the present invention comprises: form a light-emitting diode epitaxial structure on a base material; Afterwards, fit a temporary transient base material on the light-emitting diode epitaxial structure; Remove base material, to expose the lower surface of light-emitting diode epitaxial structure; One transparent base is fitted in this lower surface; Remove temporary transient base material; Etching light-emitting diode epitaxial structure to remove part light-emitting diode epitaxial structure to a degree of depth, makes the light-emitting diode epitaxial structure have first upper surface, and second upper surface, and wherein first upper surface is different doping types with second upper surface; Form metallic reflector, be positioned on first upper surface of light-emitting diode epitaxial structure, and on second upper surface; Make first electrode and second electrode at last respectively, be positioned on the metallic reflector, wherein the below of first electrode is first upper surface of light-emitting diode epitaxial structure, and the below of second electrode then is second upper surface of light-emitting diode epitaxial structure.
The another kind of manufacture method of the light-emitting diode of crystal covering type of the present invention comprises: form a LED crystal particle on base material; Afterwards a temporary transient base material is fitted on the LED crystal particle; Remove base material, to expose the lower surface of LED crystal particle; The applying transparent base is at this lower surface; Remove temporary transient base material at last.
Description of drawings
Figure 1A～1D is the schematic flow sheet according to the LED production method of a kind of crystal covering type of preferred embodiment of the present invention;
Fig. 2 is the light emitting diode construction generalized section according to the another kind of crystal covering type of preferred embodiment of the present invention;
Fig. 3 A～3D is the schematic flow sheet according to the LED production method of a kind of crystal covering type of preferred embodiment of the present invention; And
Fig. 4 A～4D is the schematic flow sheet according to the LED production method of a kind of crystal covering type of preferred embodiment of the present invention.
Embodiment
For above-mentioned feature of the present invention, method, purpose and advantage can be become apparent, cooperate appended graphicly, be illustrated as follows:
The invention provides a kind of Light-emitting Diode And Its Making Method of crystal covering type, those of ordinary skill in the art can pass through following examples, follow description of drawings, can understand the present invention easily, and be implemented.
Embodiment 1
The light-emitting diode of a kind of crystal covering type that the present invention discloses, Figure 1A to Fig. 1 D is the flow process generalized section according to the LED production method of a kind of crystal covering type of the embodiment of the invention.
In Figure 1A, at first on base material 100, make light-emitting diode epitaxial structure 101, the said light-emitting diode epitaxial structure 101 that reaches comprises AlGaInP light-emitting diode (AlGaInP) and aluminum indium gallium nitride light-emitting diode (AlGaInN), wherein, for obtaining the good epitaxial structure of crystalline quality, when making AlGaInP (AlGaInP) light-emitting diode, base material 100 is selected for use as germanium (Ge), GaAs (GaAs) or indium phosphorus (InP), and when making aluminum indium gallium nitride (AlGaInN) light-emitting diode, base material 100 is selected for use as sapphire (Sapphire), carbon silicide (SiC), silicon, lithium aluminate (LiAlO
3), zinc oxide (ZnO), gallium nitride (GaN).The making of light-emitting diode epitaxial structure 101, for forming n type semiconductor layer 102 respectively in regular turn, luminescence activity layer 104, and p type semiconductor layer 106 is on base material 100.And, then p type semiconductor layer 106 is carried out surface coarsening and handle, make to form rough matsurface characteristic, for example preferable little shadow and the etched mode used, micro-etching is carried out on surface to p type semiconductor layer 106, and produces rough surface characteristic.
The structure of luminescence activity layer 104 can be homostyructure (homo-structure), single heterojunction structure (single hetero-structure), double-heterostructure (double hetero-structure) or multiple quantum trap structure (Multi-quantum Well; MQW).And the rough surface of p type semiconductor layer 106 for example can be patterns such as rectangular prominent shape, tubercula shape or circular prominent shape and constitutes.
Then, there is the transparent base 110 of soft transparent adhesive linkage 108 to conform on the light-emitting diode epitaxial structure 101 surface coated, utilizes the bonding characteristic of soft transparent adhesive linkage 108, and transparent base 110 is pasted on the p type semiconductor layer 106.And after transparent base 110 and light-emitting diode epitaxial structure 101 are fitted, be about to base material 100 and remove, form the structure shown in Figure 1B, so far, light-emitting diode epitaxial structure 101 is passed on the transparent base 110 by base material 100 fully.
Then, carry out the crystal grain making step, with reference to Figure 1B and Fig. 1 C, earlier n type semiconductor layer 102, luminescence activity layer 104 and part p type semiconductor layer 106 are carried out platform etching (mesa etching) and make,, down carry out etching by the 102 surface beginnings of n type semiconductor layer, and remove part light-emitting diode epitaxial structure 101, at this moment, form first upper surface 1022 of n type semiconductor layer 102, and expose second upper surface 1062 of p type semiconductor layer 106.Then, on the p type semiconductor layer 106 of n type semiconductor layer 102 and exposure, form a metallic reflector 112 and a barrier layer 114 more in regular turn.At last, promptly make cathode electrode (first electrode) 116 and anode electrode (second electrode) 118 respectively on barrier layer 114, then form the light-emitting diode 10 of crystal covering type of the present invention, wherein, the material of cathode electrode 116 and anode electrode 118 is the good metal of conductivity, for example gold (Au) or nickel (Ni).
Wherein, metallic reflector 112 is selected the metal material with high reflectance for use, for example can be gold, aluminium, silver or silver alloy, light-emitting diode 10 inside of crystal covering type luminous had albedo.In addition, 114 of barrier layers are in order to prevent that cathode electrode 116 and anode electrode 118 from diffusion inside taking place, and influencing the reflectivity of metallic reflector 112, the preferable material of barrier layer 114 for example can be nickel (Ni), tungsten (W), titanium nitride (TiN), tungsten nitride (WN), platinum (Pt), zinc oxide (ZnO) or tin indium oxide (ITO).
Afterwards, below barrier layer 114 on, form an encapsulation scolder 120, attach on the base material (sumount) 122 directly to cover to place, shown in Fig. 1 D, for carrying out follow-up encapsulation flow process, wherein 124 is insulating regions.
In Fig. 1 D, setting by metallic reflector 112, and make the luminous of light-emitting diode inside, originally the downward part that penetrates, because the reflex of metallic reflector 112, and reflected back light-emitting diode inside, and then be transformed into the upwards light source of output, the luminous of light-emitting diode inside can be effectively utilized, to increase the attainable light output intensity of light-emitting diode better.
In addition, because the refraction coefficient of the semi-conducting material in the light-emitting diode epitaxial structure (refraction coefficient as gallium nitride (GaN) is about 2.4), refraction coefficient (refraction coefficient as air is about 1.5) with the light-emitting diode outside, there is sizable difference, and can't form good coupling, when so light-emitting diode inside luminous upwards exported, easy inside and outside interface at light-emitting diode, produce the phenomenon of optical total-reflection, external luminous of light-emitting diode, part is reflected back toward light-emitting diode inside, and can't export the light-emitting diode outside smoothly to, so that has reduced light output efficiency.Transparent base 110 of the present invention has light transmission features, and refractive index is between the semiconductor layer (as gallium nitride) of outside of light-emitting diode (as air) and light-emitting diode epitaxial structure 101, so light-emitting diode inside is luminous, the part that makes progress and penetrate, can penetrate transparent base 110 in a large number, to output to the light-emitting diode outside, can not absorbed by transparent base 110 or stop, and can effectively promote the light output intensity of light-emitting diode.Simultaneously, form the rough surface characteristic of p type semiconductor layer 106, and make the soft transparent adhesive linkage 108 and the interface of light-emitting diode epitaxial structure 101 have coarse irregular characteristic, so, when luminous in the light-emitting diode enters the interface of p type semiconductor layer 106 and soft transparent adhesive linkage 108, can produce deviation or scattering, and improve the optical total-reflection phenomenon of light-emitting diode inside, effectively promote the light output intensity of light-emitting diode.
Embodiment 2
With reference to shown in Figure 2, be schematic diagram according to the light-emitting diode 20 of the another kind of crystal covering type of preferred embodiment of the present invention.In this embodiment, the step of in embodiment 1, addressing, further can carry out roughening treatment to the upper surface of transparent base 210, with the rough surface characteristic of same formation, make the outwards probability increase of output of lumination of light emitting diode, and then the light that more helps to promote light-emitting diode takes out the light output intensity of efficient and light-emitting diode integral body.
Moreover, at the interface of transparent base 210 with soft transparent adhesive linkage 208, and the lower surface of transparent base 210, form rough composition surface, make it have rough matsurface characteristic.
The roughening treatment of transparent base 210 upper and lower surfaces, for example can be on transparent base 210 is still uncoated before the soft transparent adhesive linkage 208, formed earlier, or can be after transparent base 210 conforms to the light-emitting diode epitaxial structure, upper surface to transparent base 210 carries out micro-etching again, to produce the upper surface of rough transparent base 210.
Embodiment 3
The present invention further discloses a kind of light-emitting diode of crystal covering type, and shown in Fig. 3 D, Fig. 3 A-3D is the flow process generalized section according to the LED production method of the crystal covering type of preferred embodiment of the present invention.
According to embodiment 1 described step, form a n type semiconductor layer 302, one luminescence activity layers 304 respectively in regular turn, and a p type semiconductor layer 306 is on base material 300, to make a light-emitting diode epitaxial structure 301, as shown in Figure 3A.Similarly, luminescence activity layer 304 can be homostyructure, single heterojunction structure, double-heterostructure or multiple quantum trap structure.
Then, there is the temporary transient base material 310 of soft transparent adhesive linkage 308 to fit on the light-emitting diode epitaxial structure 301 surface coated, utilizes the adhesion characteristic of soft transparent adhesive linkage 308, temporary transient base material 310 is pasted on the p type semiconductor layer 306.Afterwards, promptly then base material 300 is removed.Then n type semiconductor layer 302 being carried out surface coarsening handles, make to form a rough lower surface 3022, can use little shadow and etched mode, micro-etching is carried out on the surface of n type semiconductor layer 302, and produce rough surface characteristic, form the structure shown in Fig. 3 B.Wherein temporary transient only conduct of base material " temporarily " accept the usefulness of light-emitting diode epitaxial structure 301, therefore, the material of temporary transient base material 310 can be with the semiconductor layer stickup but the base material that is easy to remove, as glass, silicon, pottery (ceramic), aluminium oxide (Al
2O
3), the material of soft transparent adhesive linkage 308 also is be principle to be easy to remove, as Polyimide (Polyimide), glass, thermosetting resin benzocyclobutene (bisbenzocyclobutene; BCB) resin.
Afterwards, utilize a soft transparent adhesion coating 312 with adhesion characteristic, make a transparent base 314 conform to the lower surface 3022 of n type semiconductor layer 302, to form the structure shown in Fig. 3 C.The material of soft transparent adhesive linkage 312 can be identical with the material of aforesaid soft transparent adhesive linkage 308 or inequality, as can be thermosetting resin benzocyclobutene (bisbenzocyclobutene; BCB) resin, Polyimide (Polyimide), glass or epoxy resin (epoxy), so that transparent base 314 can form good fluid-tight engagement with the n type semiconductor layer 302 with convex-concave surface, and transparent base 314 is selected the transparent material of light-permeable for use, for example can be sapphire (sapphire), glass, gallium phosphide (GaP) or carborundum (SiC).Afterwards, temporary transient base material 310 and soft transparent adhesive linkage 308 are removed.At this moment, can form structure shown in Fig. 3 C.
Then, carry out as described in example 1 above about carrying out the step that crystal grain is made, earlier p type semiconductor layer 306, luminescence activity layer 304 and part n type semiconductor layer 302 being carried out the platform etching makes, to remove part light-emitting diode epitaxial structure 301, with first upper surface 3022 of exposure n type semiconductor layer 302, and second upper surface 3062 of formation p type semiconductor layer 306.Then, form a metallic reflector 316 and a barrier layer 318 more in regular turn.At last, promptly make cathode electrode (first electrode) 320 and anode electrode (second electrode) 322 respectively on barrier layer 318, form the light-emitting diode of crystal covering type of the present invention, shown in Fig. 3 D.Wherein, the material of metallic reflector 316, barrier layer 318, cathode electrode 320 and anode electrode 322 describes in detail in embodiment 1, is not giving unnecessary details at this.Be noted that with embodiment 1 at this and compare, near transparent base 110 is p type semiconductor layer 106, and in embodiment 3, by secondary and different substrate materials applying (temporary transient base material 310 and transparent base 314), through " the secondary upset ", near transparent base 314 is n type semiconductor layer 302, luminescence activity layer 304 increases with the distance of transparent base 314, then the distance of light from luminescence activity layer 304 to the light-emitting diode outside increases, the phenomenon of light total reflection is improved, make luminous can being effectively utilized in the light-emitting diode, significantly to increase the light output intensity of light-emitting diode.
Embodiment 4
In this embodiment, the light-emitting diode of crystal covering type is identical with embodiment 3 (shown in Fig. 3 D), only is the manufacture method difference.
At first make a LED crystal particle with known technology, comprise and form n type semiconductor layer 402, luminescence activity layer 404 and p type semiconductor layer 406 in regular turn on a base material 400, form a light-emitting diode epitaxial structure 401, carry out little shadow, etching making afterwards, to expose the n type semiconductor layer, with first upper surface 4022 of formation n type semiconductor layer, and second upper surface 4062 of formation p type semiconductor layer.Form metal level 408, barrier layer 410, reach cathode electrode 414 and anode electrode 412 according to the step shown in the embodiment 1 more afterwards, finish LED crystal particle, shown in Fig. 4 A.
Again temporary transient base material 420 is pasted on anode electrode 412 and the encapsulation scolder 416.Remove base material 400 this moment, then forms the structure shown in Fig. 4 B.
Shown in Fig. 4 C, will remove base material 400 backs and the lower surface of the n N-type semiconductor N that exposes carries out alligatoring, can use little shadow and etched mode, the lower surface of n type semiconductor layer 402 is carried out micro-etching, and produces rough lower surface 4022.Afterwards, the transparent base 424 that the surface coated of fitting has soft transparent adhesive linkage 422 utilizes the adhesion characteristic of soft transparent adhesive linkage 422, and temporary transient base material 424 is pasted on the n type semiconductor layer 402.Again temporary transient base material 420 is removed, then can finish the light-emitting diode of crystal covering type of the present invention.Referring to Fig. 4 D, be that the light-emitting diode with crystal covering type of the present invention directly covers the schematic diagram of putting attaching on the base material 426, for carrying out follow-up encapsulation flow process, wherein 428 is insulating regions.Wherein, through " secondary upset ", near transparent base 424, and what be positioned at the upper strata is n type semiconductor layer 402, and what be positioned at lower floor is p type semiconductor layer 406, and luminescence activity layer 404 increases with the distance of transparent base 424, then the distance of light from luminescence activity layer 404 to the light-emitting diode outside increases, the phenomenon of light total reflection is improved, and makes luminous can being effectively utilized in the light-emitting diode, significantly to increase the light output intensity of light-emitting diode.Also can carry out micro-etched roughening treatment to the surface of transparent base 424, with the rough surface characteristic of same formation, make the outwards probability increase of output of lumination of light emitting diode, and then more help to promote the light taking-up efficient of light-emitting diode, and the light output intensity (not shown).
The present invention is by describing as above with reference to different embodiment, yet it is not to be used for limiting the present invention, on the contrary, do not breaking away from spirit of the present invention and category, under the definition of claim, the present invention also comprises the conspicuous modification of those skilled in the art, changes, rearranges, replaces, replacement, design alternative and embodiment.Therefore, protection scope of the present invention when with claim scope was defined is as the criterion.
The drawing reference numeral explanation
10, the light emitting diode of 20,30 crystal covering types
100,200,300,400 base materials
102,202,302,402 N-shaped semiconductor layers
104,204,304,404 luminescence activity layers
106,206,306,406 p type semiconductor layer
108,208,308,408,312,422 soft transparent adhesive linkages
110,210,314,424 transparent bases
101,301,401 light-emitting diode epitaxial structures
112,212,316,408 metallic reflectors
114,214,318,410 barrier layers
116,216,320,414 cathode electrodes
118,218,316,412 anode electrodes
120,416 encapsulation tin material
122,426 attach base material
124,428 insulating regions
Claims (16)
1. the manufacture method of the light-emitting diode of a crystal covering type is characterized in that, comprises:
Form the light-emitting diode epitaxial structure in base material, wherein said light-emitting diode epitaxial structure has opposite first and second surface, and described first surface contacts with described base material;
Utilize the soft transparent adhesive linkage, transparent base is fitted in the described second surface of described light-emitting diode epitaxial structure, wherein said soft transparent adhesive linkage is between described transparent base and described light-emitting diode epitaxial structure;
Remove described base material, to expose described light-emitting diode epitaxial structure, this moment, described soft transparent adhesive linkage was positioned under the described light-emitting diode epitaxial structure;
The described light-emitting diode epitaxial structure of etching, to remove part light-emitting diode epitaxial structure to a degree of depth, make described light-emitting diode epitaxial structure have first upper surface, and second upper surface, wherein said first upper surface is different doping types with described second upper surface;
Form metallic reflector, be positioned on described first upper surface of described light-emitting diode epitaxial structure, and on described second upper surface; And
Make first electrode and second electrode respectively, be positioned on the described metallic reflector, the below of wherein said first electrode is first upper surface of described light-emitting diode epitaxial structure, and the below of described second electrode then is second upper surface of described light-emitting diode epitaxial structure.
2. manufacture method as claimed in claim 1 is characterized in that, the material of described metallic reflector is gold, aluminium, silver or silver alloy.
3. manufacture method as claimed in claim 1 is characterized in that, described transparent base is fitted to before the described second surface of described light-emitting diode epitaxial structure, also comprises the described second surface of the described light-emitting diode epitaxial structure of alligatoring.
4. manufacture method as claimed in claim 1 is characterized in that, forms after the described metallic reflector, and makes before described first electrode and described second electrode, also comprises to form a barrier layer on described metallic reflector.
5. the light-emitting diode of a crystal covering type is characterized in that, comprises:
Transparent base;
The light-emitting diode epitaxial structure is positioned on the described transparent base, and wherein said light-emitting diode epitaxial structure has first upper surface, and second upper surface, and described first upper surface is different doping types with described second upper surface;
Metallic reflector is positioned on first upper surface of described light-emitting diode epitaxial structure, and on second upper surface;
First electrode is positioned on the described metallic reflector, and the below of described first electrode is described first upper surface; And
Second electrode is positioned on the described metallic reflector, and the below of described second electrode is described second upper surface.
6. the light-emitting diode of crystal covering type as claimed in claim 5 is characterized in that, also comprises the soft transparent adhesive linkage, between described transparent base and described light-emitting diode epitaxial structure.
7. the light-emitting diode of crystal covering type as claimed in claim 6 is characterized in that, the material of described soft transparent adhesive linkage comprises thermosetting resin benzocyclobutane olefine resin.
8. the light-emitting diode of crystal covering type as claimed in claim 5 is characterized in that, also comprises barrier layer, between described metallic reflector and described first and second electrode.
9. the light-emitting diode of crystal covering type as claimed in claim 8 is characterized in that, the material of described barrier layer comprises nickel, tungsten, tungsten nitride, titanium nitride or platinum.
10. the light-emitting diode of crystal covering type as claimed in claim 5 is characterized in that, the material of described metallic reflector comprises rhodium, gold, aluminium, silver or silver alloy.
11. the light-emitting diode of crystal covering type as claimed in claim 5 is characterized in that, described light-emitting diode epitaxial structure further comprises rough lower surface, engages with described transparent base.
12. the manufacture method of the light-emitting diode of a crystal covering type is characterized in that, comprises:
Form the light-emitting diode epitaxial structure on base material;
Fit temporary transient base material on described light-emitting diode epitaxial structure;
Remove described base material, to expose the lower surface of described light-emitting diode epitaxial structure;
The applying transparent base is in described lower surface;
Remove described temporary transient base material;
The described light-emitting diode epitaxial structure of etching, to remove the described light-emitting diode of part epitaxial structure to a degree of depth, make described light-emitting diode epitaxial structure have first upper surface, and second upper surface, wherein said first upper surface is different doping types with described second upper surface;
Form metallic reflector, be positioned on first upper surface of described light-emitting diode epitaxial structure, and on second upper surface; And
Make first electrode and second electrode respectively, be positioned on the described metallic reflector, the below of wherein said first electrode is first upper surface of described light-emitting diode epitaxial structure, and the below of described second electrode then is second upper surface of described light-emitting diode epitaxial structure.
13. manufacture method as claimed in claim 12, it is characterized in that, also comprise the soft transparent adhesive linkage, by described soft transparent adhesive linkage, fit described temporary transient base material on described light-emitting diode epitaxial structure, or the described transparent base of fitting is in described lower surface, and the material of described soft transparent adhesive linkage is a thermosetting resin benzocyclobutane olefine resin.
14. manufacture method as claimed in claim 12 is characterized in that, the material of described metallic reflector comprises rhodium, gold, aluminium, silver or silver alloy.
15. as manufacture method as described in the claim 12, it is characterized in that, also comprise and form barrier layer between described metallic reflector and described first and second electrode.
16., it is characterized in that the material of described temporary substrate is glass, silicon, pottery, aluminium oxide as manufacture method as described in the claim 12.
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| CN103258931B (en) * | 2009-04-28 | 2016-05-04 | 晶元光电股份有限公司 | There is photoelectric cell and the manufacture method thereof of transparent bonding structure |
| CN103378251A (en) * | 2012-04-13 | 2013-10-30 | 联胜光电股份有限公司 | Electrical contact structure of light emitting diode |
| CN103383982A (en) * | 2012-05-03 | 2013-11-06 | 联胜光电股份有限公司 | Electrode contact structure of light emitting diode |
| CN102931309B (en) * | 2012-11-15 | 2015-04-01 | 安徽三安光电有限公司 | Inverted LED and manufacturing method thereof |
| CN109616579A (en) * | 2018-12-14 | 2019-04-12 | 顾琼 | A kind of no electron transfer layer organic semiconductor device and preparation method thereof |
| TWM611530U (en) * | 2020-04-29 | 2021-05-11 | 富昱晶雷射科技股份有限公司 | Flip-chip electrically pumped photonic crystal surface-emitting type laser element |
| TWI736334B (en) * | 2020-06-23 | 2021-08-11 | 隆達電子股份有限公司 | Light emitting diode |
| JP7136311B1 (en) * | 2021-12-03 | 2022-09-13 | 信越半導体株式会社 | Bonded semiconductor wafer manufacturing method |
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| CN1773736A (en) | 2006-05-17 |
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