CN210052732U

CN210052732U - Integrated power electronic device heat radiation structure

Info

Publication number: CN210052732U
Application number: CN201920030600.0U
Authority: CN
Inventors: 郭庭; 杨锡旺
Original assignee: Changzhou Suo Wei Electronic Technology Co Ltd
Current assignee: Changzhou Shiwei Electronics Co ltd
Priority date: 2019-01-08
Filing date: 2019-01-08
Publication date: 2020-02-11
Anticipated expiration: 2029-01-08

Abstract

The utility model provides an integral type power electronic device heat radiation structure, this heat radiation structure includes the quick-witted case main casing body, fixed mounting has at least one seal chamber in the main casing body, with power electronic device's pin upwards with circuit board welded fastening formation circuit board subassembly, with high coefficient of thermal conductivity insulating cement embedment to seal chamber in, with circuit board subassembly with power electronic device's body cooling surface down, make in the deep seal chamber of power electronic device's body, make high coefficient of thermal conductivity insulating cement seal power electronic device's body cooling surface.

Description

Integrated power electronic device heat radiation structure

Technical Field

The utility model belongs to the technical field of power electronic device, in particular to integral type power electronic device heat radiation structure.

Background

At present, in the fields of new energy automobiles, rail transit, industrial control and the like, such as vehicle-mounted chargers, direct current exchangers, alternating current exchangers, two-in-one system integration, three-in-one system integration and the like, MOSFET and IGBT power electronic devices are used and integrated on a PCB (printed circuit board), and therefore on-off control of circuits is achieved. The MOSFET and IGBT power electronic devices have the advantages of reliability, accuracy, long service life, high working frequency and the like in the process of realizing the switching control of the circuit, so the MOSFET and IGBT power electronic devices are widely used. The power loss of the MOSFET and IGBT power electronic devices can bring serious heating, so that the problem that the normal work of a circuit is ensured by solving the temperature rise of the devices becomes a problem which needs to be solved in the circuit design.

After collecting MOSFET, IGBT power electronic device to the PCB board, the existing method for solving the problem of heat dissipation mostly uses to assemble MOSFET, IGBT power electronic device to a fixed shell structure with screw fixation first, then assembles whole fixed shell structure and main shell, uses the screw to fix fixed shell and main shell, then assembles to the circuit board. The pins to which such MOSFET, IGBT power electronics are soldered to the circuit board vary from tens, tens to nearly hundreds, depending on the topology of the actual circuit. In the process of assembling the circuit board, it is thought that the difficulty of assembling the pins from dozens to nearly hundreds is very high, so that the size precision, the assembly process, the production efficiency and the product yield are greatly influenced, and the serious troubles such as scrapping and reworking are brought to the production of the product. After the circuit board is assembled, a soldering operation is performed. These high pin soldering jobs are heavy, increasing equipment investment and bottleneck station time. As shown in fig. 4, the heat dissipation structure is fixed to a case of a conventional power electronic device such as a MOSFET or an IGBT. The first device MOSFET 2, the second device MOSFET 5 and the device seat are assembled at first, the assembled devices are compressed by the compression spring pieces 10, then the MOSFET devices are screwed on the device seat shell by the screws 7, finally the device seat is fixed on the studs 9 by the screws 8, and the studs 9 are fastened with the metal main shell of the case. This method requires a large number of parts to be assembled through a complicated mounting process and assembly of a plurality of parts, and therefore, the dimensional accuracy of the product is required to be high in consideration of the tolerance of the plurality of parts. As shown in fig. 4, the first device MOSFET 2 and the second device MOSFET 5 have many soldering pins, and it is very difficult to align the soldering pins with the first circuit board 1 to be assembled, resulting in a complicated assembly process. Misalignment of device pins can result in a large amount of product scrap. Because the first device MOSFET 2 and the second device MOSFET 5 have more welding pins, welding equipment needs to be put into the welding equipment for welding, and the welding time is long and becomes a bottleneck work station. And because the part is many, and first device MOSFET 2 and second device MOSFET 5 are the source that generates heat, unable abundant contact between the device, there are clearance and air easily between a plurality of devices, has led to the device radiating effect poor, and then influences the performance parameter and the life-span of first device MOSFET 2 and second device MOSFET 5.

The other solution is that the MOSFET and IGBT power electronic devices are bent by a tool fixture and then assembled and fixed with the main shell. According to the method, after the tool jig for the MOSFET and IGBT power electronic devices is bent, the area of the devices is increased in the horizontal direction, so that the effective utilization of a space structure is reduced in structural design, and the requirements of the current development trend of light, thin, short and small products cannot be met. Meanwhile, the number of the pins ranges from dozens, dozens to hundreds, and the pins still need to be assembled and welded with a circuit board, and the problems are also caused. It can be seen that this approach not only limits the effective use of the structural design, but also results in increased volume, weight gain, cost, and energy consumption. As shown in fig. 5, the conventional power electronic device, such as MOSFET or IGBT, has a bent heat dissipation structure. Firstly, the insulating gaskets 12 and 19 and the metal shell 16 are assembled by adopting a tool fixture, then the electronic devices 11 and 15 are assembled on the insulating gaskets 12 and 19, then the pressing elastic sheet 13, the screw 14, the pressing elastic sheet 18 and the screw 17 are assembled, and finally the welding pins of the electronic devices 11 and 15 are aligned with the circuit board 20 and then welded. It can be seen from the above that, the assembly structure has many parts, high requirement for product precision, tooling jig and bending jig are required in the assembly process, and in the alignment assembly process of the welding pins of the electronic devices 11 and 15 and the circuit board 20, the assembly alignment is difficult and welding equipment is required after the assembly. Therefore, the method has the defects of multiple parts, multiple molds, multiple tool fixtures and bending fixtures and multiple input devices, and the product cost is high and the production efficiency is low.

SUMMERY OF THE UTILITY MODEL

The utility model provides an integral type power electronic device heat radiation structure, the purpose with overcome current power electronic device heat radiation structure equipment complicated problem with high costs.

The utility model discloses an one of the embodiment, an integral type power electronic device heat radiation structure, this heat radiation structure include the quick-witted case main casing body, and fixed mounting has at least one seal chamber in the main casing body. And welding and fixing the pins of the power electronic device upwards and the circuit board to form a circuit board assembly, and encapsulating the high-thermal-conductivity-coefficient insulating glue into the sealed cavity. The heat dissipation surface of the body of the power electronic device is downward, so that the body of the power electronic device is deep into the sealing cavity, and the heat dissipation surface of the body of the power electronic device is sealed by the high-thermal-conductivity-coefficient insulating glue. And baking the case to accelerate the solidification of the high-thermal-conductivity-coefficient insulating glue.

The utility model discloses power electronic device integral type heat radiation structure is because simple structure, and the assembling process is simple and easy, does not aim at installation welding pin, does not have fixed casing alone, and the assembling process does not weld once more and does not have advantages such as welding equipment drops into, consequently, production efficiency is high, and the equipment part is few, and the mould drops into fewly, and equipment drops into fewly, advantages such as cost.

Drawings

The above and other objects, features and advantages of exemplary embodiments of the present invention will become readily apparent from the following detailed description read in conjunction with the accompanying drawings. Several embodiments of the present invention are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which:

fig. 1 is a schematic diagram of a heat dissipation structure of a power electronic device in an embodiment of the present invention.

Fig. 2 is a schematic diagram of a separated state of a heat dissipation structure of a power electronic device in an embodiment of the present invention.

Fig. 3 is a schematic diagram of an assembly process of the heat dissipation structure of the power electronic device in the embodiment of the present invention.

Fig. 4 is a schematic view of a prior art power electronics MOSFET housing and screw attachment assembly.

Fig. 5 is a schematic diagram of a conventional power electronic device MOSFET circuit board soldering bent pin structure.

1-a first circuit board to be assembled, 2-a first device MOSFET, 3-a metal main shell, 4-high thermal conductivity coefficient insulating glue, 5-a second device MOSFET, 6-an assembled circuit board, 7-a first screw, 8-a second screw, 9-a stud, 10-a first compression spring plate,

11-third device, 12-first insulating gasket, 13-second compression spring, 14-third screw, 15-fourth device, 16-metal shell, 17-fourth screw, 18-third compression spring, 19-second insulating gasket, 20-second circuit board to be assembled.

Detailed Description

According to one or more embodiments, as shown in fig. 1 and fig. 2, the integrated power electronic device heat dissipation structure comprises a circuit board 1 to be assembled, a device MOSFET 2, a metal main shell 3, a high thermal conductivity insulating glue 4 and a device MOSFET 5.

According to one or more embodiments, as shown in fig. 3, an assembled state diagram of an integrated heat dissipation structure of a power electronic device is shown. In the production process of a circuit board company, firstly, components obtained by welding a circuit board 1 with a device MOSFET 2 and a device MOSFET 5 are delivered to an assembly factory; next, in the sealed cavity in the metal main case 3, the high thermal conductivity insulating paste 4 is potted into the sealed cavity in the metal main case 3 after the determined amount is used. Then, as shown in fig. 3, the assembled circuit board assembly 6 is assembled with the metal main housing 3. At this time, the sealed cavity of the metal main shell is filled with the high-thermal-conductivity-coefficient insulating glue 4. The assembled assembly is shown in fig. 1, and according to the design requirement of a product, the assembly can be baked to accelerate the solidification of the high-thermal-conductivity-coefficient insulating glue 4, or the assembly can be naturally solidified without baking. The sealed cavity can adopt a strip-shaped slot structure.

It is worth noting that while the foregoing has described the spirit and principles of the present invention with reference to several specific embodiments, it is to be understood that the present invention is not limited to the disclosed embodiments, nor is the division of aspects, which is for convenience only as the features in these aspects cannot be combined. The invention is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims

1. An integrated heat dissipation structure for power electronic devices is characterized by comprising a main case body, at least one sealed cavity fixedly arranged in the main case body, insulating glue with high thermal conductivity coefficient filled in the sealed cavity,

the heat dissipation structure also comprises a circuit board assembly, pins of power electronic devices in the circuit board assembly face upwards and are welded and fixed with the circuit board,

the heat radiating surface of the body of the power electronic device of the circuit board assembly is downward and deeply inserted into the sealed cavity, so that the insulating glue with high heat conductivity coefficient seals the heat radiating surface of the body of the power electronic device,

wherein, the seal chamber is a strip-shaped slot structure.