CN210006924U - Double-frequency c-type opening resonant ring terahertz ring dipole super surface - Google Patents
Double-frequency c-type opening resonant ring terahertz ring dipole super surface Download PDFInfo
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Abstract
The utility model discloses a dual-frenquency c type opening resonance ring terahertz ring dipole super surface, its super surface structure comprises two c type opening resonance rings of the rotational symmetry with planes, set up the metal level of c type opening resonance ring on dielectric layer Mylar film, the metal material adopts Al, the arrangement shape of metal level is two c type opening resonance rings are around z axis rotational symmetry, use super surface's geometric center as the original point, two c type opening resonance rings of rotational symmetry all are 0 mu m ~ 30 mu m apart, the opening angle scope is 10 ~ 140 and the outer ring radius of c type opening resonance ring and inner ring radius scope are 25 mu m ~ 60 mu m and 20 mu m ~ 55 mu m respectively, adopt "medium-metal" structure, can effectively strengthen front incident intensity, can produce the ring dipole in low frequency and high frequency department, utilize the ring dipole at terahertz performance of terahertz frequency channel, prepare terahertz devices such as terahertz sensor, detector, modulator, wave absorber.
Description
Technical Field
The utility model discloses a double-frenquency c type opening resonant ring terahertz ring dipole is super surface preparation adopts the ring dipole of "medium-metal" structure to surpass the surface, can effectively strengthen positive incident intensity, can both produce the ring dipole in low frequency and high frequency department, utilizes the ring dipole at terahertz frequency channel's electromagnetic property, can be used to preparation terahertz devices such as terahertz sensor, detector, modulator, wave absorber now.
Background
Terahertz (THz) waves refer to electromagnetic waves with frequencies in the range of 0.1THz to 10THz, and electromagnetic waves located between microwaves and far infrared, terahertz has an application range of in the fields of broadband communication, radar, medical imaging, safety inspection and the like, ring dipoles are locally electromagnetically excited and play a key role in determining basic properties of substances, but electromagnetic response of the ring dipoles is generally weaker than that of electric dipoles and magnetic dipoles, so that observation is difficult, Zel' dovich I B first proposed ring dipoles in 1957, because the unique properties of the ring dipoles attract attention of university students, Marinov K and the like in 2007, four open ring resonators (SRRs) for us of four open ring resonators (SRRs) first detected the existence of ring dipoles in 2007, development of metamaterials provides brand-new methods for researching ring dipoles, ring metamaterials of terahertz (THz) ring metamaterials, terahertz ring dipoles, and the like, and terahertz ring dipoles have high surface polarization characteristics, and the characteristics of a planar ring dipoles with a planar structure, thus the terahertz surface of terahertz ring dipoles, the terahertz ring dipoles are easily designed and the terahertz surface of a planar structure is a very high-waveguide, and the terahertz ring dipole is a very high-structured terahertz is a very flexible and the terahertz is a very fragile material, the terahertz is a very stable, the material is a very stable, the terahertz ring waveguide, the terahertz waveguide is a terahertz waveguide, the terahertz waveguide is a very flexible waveguide, the terahertz waveguide.
Disclosure of Invention
The utility model discloses a terahertz of "medium-metal" structure encircles the dipole super surface now, adopts neotype c type opening resonant ring structures, and dielectric material uses the Mylar film, and this structure has good performance index such as double-frenquency ring dipole, resonant frequency are adjustable.
The technical scheme of the utility model as follows:
the terahertz ring dipole super surface of the dual-frequency c-type open resonant ring is obtained by two c-type open resonant rings which are rotationally symmetrical with the plane , a metal layer of the c-type open resonant ring is arranged on a dielectric layer, the arrangement shape of the metal layer is that the two c-type open resonant rings are rotationally symmetrical about a z axis, the two c-type open resonant rings which are rotationally symmetrical are 0-30 mu m apart by taking the geometric center of the super surface as an origin, the opening angle range is 10-140 degrees, the outer ring radius and the inner ring radius range of the c-type open resonant rings are 25-60 mu m and 20-55 mu m respectively, the thickness of the metal layer is 0.2-0.6 mu m, the sizes of all the c-type open resonant rings are the same, the distances are equal, and the distance between the metal layer of the c-type open resonant rings and the dielectric layer is 15-30 mu m.
Preferred conditions are: taking the geometric center of the super surface as an origin, the distance between two c-type metal open-ended resonance rings which are rotationally symmetrical is 5-25 mu m, the opening angle range is 30-120 degrees, and the outer ring radius and the inner ring radius range of the c-type open-ended resonance rings are 30-55 mu m and 25-50 mu m respectively; the thickness of the metal layer is 0.3-0.5 μm; the distance between the metal layer of the c-type structure and the bottom dielectric layer is 18-27 microns.
The utility model discloses a preparation method of a double-frequency c-shaped opening resonant ring terahertz ring dipole super-surface; photoetching and vacuum thermal evaporation methods are adopted; the method comprises the following steps:
(1) preparation work: because the Mylar film is too soft, the Mylar film cannot be adsorbed on the turntable and cannot rotate at high speed. Therefore, the Mylar film is adhered to a silicon wafer by using a double-sided adhesive tape so as to keep the Mylar film flat in the rotating process, and the Mylar film is cleaned and dried;
(2) the preparation of the metal layer comprises the steps of throwing photoresist onto a Mylar film, carrying out soft heating, aligning a mask plate with the correct position of the Mylar film coated with the photoresist, placing a sample in an exposure machine, transferring a mask pattern onto the Mylar film coated with the photoresist, placing the sample in an oven for baking to enable the photoresist to carry out chemical reaction so as to enable an exposed pattern to be uniform, placing the baked sample in developing solution for development, taking out the sample, washing, drying, placing in the oven for baking to enable the developing solution remained on the sample to evaporate, solidifying the pattern of the photoresist, plating layers of metal films with the depth being more than twice the skin depth on the surface of the photoresist layer by using a vacuum thermal evaporation method, directly plating metal without the photoresist on a dielectric layer, soaking the evaporated sample in an acetone solution, dissolving the photoresist, taking away the metal on the photoresist, leaving the metal directly plated on the dielectric layer to form a metal pattern array, wherein the obtained metal layer is a plurality of rows of metal structures with two rotationally symmetric c-type metals which are alternately arranged, and all the symmetric c-type resonant rings have the same size and are equal distance.
The preferred silicon wafer size is 3-4 inches in diameter and 500-640 μm thick.
Preferably, the spin coater rotates at a speed of 2500-3500 rpm for 15-45 seconds.
Preferably, the sample is heated at 100-120 ℃ for 3-15 min.
Preferably, the sample is placed in an exposure machine, and the exposure time is 30-40 seconds.
Preferably, the sample is put into an oven to be baked for 3-5 min at 115-120 ℃.
Preferably, the sample is placed in a developer until the development is clear.
The vacuum environment for vapor deposition is preferably higher than 5X 10-5mB, the evaporation rate is about 10-15 nm/s.
The utility model discloses an 8-F THz-TDS measures and obtains this electromagnetic characteristic of surpassing the surface under terahertz wave band.
The utility model discloses a kind of double-frequency c type opening resonance ring terahertz ring dipole superficies, adopt "medium-metal" structure, can effectively strengthen positive incident strength, this structure can all produce the ring dipole in low frequency and high frequency department, utilizes the ring dipole at terahertz frequency channel's electromagnetic property, can be used to preparation terahertz devices such as terahertz sensor, detector, modulator, wave absorber now.
Compared with the prior art, the utility model, have following outstanding substantive characteristics and show the advantage:
1, new structure model-c-type open resonant ring.
2. Adopts a medium-metal structure, has a plane structure and is easy to prepare.
3. The double-frequency ring dipole can be obviously observed in the terahertz waveband, and the method has important significance for theoretical research and experimental test of the terahertz waveband.
Drawings
FIG. 1: a dielectric layer with a ring dipole super surface structure; t: the thickness of the dielectric layer; a: the length of the dielectric layer; b: the width of the dielectric layer;
FIG. 2 shows a metal layer of a ring dipole super-surface structure, theta is an opening angle, QR is an outer ring radius of c-type metal, IR is an inner ring radius of c-type metal, w is a width of the c-type metal ring, g is a distance between two c-type metals in the same plane, and thm is a thickness of the c-type metal.
FIG. 3: is a top view of a ring dipole super-surface structure; the super-surface model structure takes the geometric center as the origin.
FIG. 4: a general diagram of a ring dipole super-surface structure;
Detailed Description
The preparation method of the utility model is a photoetching method and a vacuum thermal evaporation method, and comprises the following steps:
(1) preparation work: cleaning and dehydrating the silicon wafer and the Mylar film, and forming a base film on the surface of the silicon wafer; adhering the Mylar film on a silicon wafer with the diameter of 3-4 inches and the thickness of 500-640 mu m by using double-sided adhesive so as to keep the Mylar film flat in the rotating process; after the step is finished, the dielectric layer with the length of 250-262 mu m, the width of 130-150 mu m and the thickness of 18-27 mu m can be obtained.
(2) Preparing a metal layer, namely, rotating a photoresist spinner at 2500-3500 rpm for 15-45 seconds, throwing photoresist onto a Mylar film, heating a sample at 100-120 ℃ for 3-15 minutes, aligning a mask plate with the correct position of the Mylar film coated with the photoresist, placing the sample in an exposure machine, exposing for 30-40 seconds to transfer a mask pattern onto the coated Mylar film, placing the sample in an oven, baking for 3-5 minutes at 115-120 ℃ to fully perform chemical reaction on the photoresist to homogenize an exposed pattern, placing the baked sample in a developing solution for development, taking out the sample, washing and drying the sample, placing the sample in the oven, baking for 3-5 minutes at 115-120 ℃ to evaporate the developing solution remained on the sample, curing the pattern of the photoresist, and finally plating metal film with the depth more than twice the skin depth on the surface of the photoresist layer by using a vacuum thermal evaporation method, wherein the vacuum environment of evaporation is higher than 5 multiplied by 10-5mB, the evaporation rate is about 10-15 nm/s, the metal without photoresist is directly plated on the dielectric layer, the evaporated sample is soaked in acetone solution, the photoresist is dissolved and the metal on the photoresist is taken away, and the metal directly plated on the dielectric layer is left to form an aluminum pattern array, at the moment, two c-shaped opening resonance rings of the metal layer can be obtained, the arrangement shape of the metal layer is that the opening directions of two adjacent c-shaped openings in rows are rotationally symmetrical, the distance between the two c-shaped opening resonance rings is 5-25 mu m, the outer ring radius and the inner ring radius of the c-shaped structure are respectively 30-55 mu m and 25-50 mu m, the opening angle range is 30-120 degrees, the thickness of the metal layer is 0.3-0.5 mu m, the sizes of all symmetrical c-shaped opening resonance rings are the same, and the distances are the same.
Example 1
The present invention will be described in detail with reference to the accompanying drawings and examples, but the present invention is not limited to the following examples.
As shown in fig. 1 to 4, the two-layer structure of the super-surface model takes the geometric center of each layers as an origin, the arrangement shape of the metal layers is that the opening directions of two adjacent c-type open resonant rings are rotationally symmetric, the upper and lower structures are , the distance between the two c-type open resonant rings is g-0 μm, the opening angle θ is 10 °, the outer ring radius and the inner ring radius of the c-type structure are QR-25 μm and IR-20 μm respectively, the width w of the c-type metal ring is QR-IR-5 μm, the thickness is thm-0.2 μm, all the c-type open resonant rings have the same size and the same distance, the distance between the metal layer of the c-type structure and the dielectric bottom layer is t-15 μm, the length of the dielectric layer is a-240 μm, and the width of the dielectric layer is b-120 μm.
The preparation method of the super surface of the observable ring dipole under the terahertz frequency is a photoetching method and a vacuum thermal evaporation method, and is characterized by comprising the following steps of:
(1) preparation work: cleaning and dehydrating the silicon wafer and the Mylar film, and forming a base film on the surface of the silicon wafer; adhering the Mylar film on a silicon wafer with the diameter of 3 inches and the thickness of 640 mu m by using a double-sided adhesive tape so as to keep the Mylar film flat in the rotating process; after this step, a dielectric layer having a length of 240 μm, a width of 120 μm and a thickness of 15 μm was obtained.
(2) Preparing metal layer, rotating photoresist at 3000rpm for 40 sec, throwing photoresist to Mylar film, heating at 100 deg.c for 15min, aligning the mask plate with the Mylar film coated with photoresist, exposing in exposure machine for 35 sec to transfer the mask pattern to the coated Mylar film, stoving at 120 deg.c for 3min to produce homogeneous exposed pattern, developing in developer, washing to dry and stoving at 120 deg.c for 3min to evaporate the residual developer and solidify the pattern of photoresist, vacuum heat evaporating to deposit layer of metal film in the depth over two times that of the photoresist layer in vacuum environment higher than 5 × 10-5mB, evaporation rate about 10 nm/s. The local metal without photoresist is directly plated on the dielectric layer, the evaporated sample is soaked in acetone solution, the photoresist is dissolved and the metal on the photoresist is taken away, and the metal is directly plated on the photoresistThe metal plated on the dielectric layer is left to form an aluminum pattern array, the opening directions of two adjacent c-shaped openings in rows are rotationally symmetrical, the distance between two c-shaped opening resonance rings is 0 mu m, the opening angle theta is 10 degrees, the outer ring radius and the inner ring radius of the c-shaped structure are QR 25 mu m and IR 20 mu m respectively, the line width w is 5 mu m, the thickness thm is 0.2 mu m, the length a of the dielectric is 240 mu m, the width b is 120 mu m, and all the c-shaped opening resonance rings are the same in size and distance.
The low-frequency and high-frequency resonance frequencies of the super surface under the terahertz waveband can be obtained by 8-F THz-TDS measurement and are 0.4522THz and 1.1968THz respectively; the transmission was 0.8041, 0.65793, respectively, and the figure of merit was 1.14, 7.13, respectively.
Example 2
The present invention will be described in detail with reference to the accompanying drawings and examples, but the present invention is not limited to the following examples.
As shown in fig. 1 to 4, the two-layer structure of the super-surface model takes the geometric center of each layers as an origin, the arrangement shape of the metal layers is that the two adjacent c-shaped opening directions are rotationally symmetrical, the upper and lower rows of structures are , the distance between two c-shaped opening resonance rings is 5 μm, the opening angle θ is 30 °, the outer ring radius and the inner ring radius of the c-shaped structure are QR 30 μm and IR 25 μm respectively, the width w of the c-shaped metal ring is QR-IR 5 μm, the thickness is thm 0.3 μm, all the c-shaped opening resonance rings have the same size and the same distance, the distance between the metal layer of the c-shaped structure and the bottom layer of the medium is t 18 μm, the length of the medium is a 250 μm, and the width b is 130 μm.
The preparation method of the metamaterial with the ring dipole observable under the terahertz frequency is a photoetching method and a vacuum thermal evaporation method, and is characterized by comprising the following steps of:
(1) preparation work: cleaning and dehydrating the silicon wafer and the Mylar film, and forming a base film on the surface of the silicon wafer; adhering the Mylar film on a silicon wafer with the diameter of 3 inches and the thickness of 640 mu m by using a double-sided adhesive tape so as to keep the Mylar film flat in the rotating process; after this step, a dielectric layer having a length of 250 μm, a width of 130 μm and a thickness of 18 μm was obtained.
(2) Preparing a metal layer: the spin coater is operated at 3000rpmRotating at 40 s, throwing photoresist onto Mylar film, heating at 100 deg.C for 15min, aligning the mask with the Mylar film, exposing in exposure machine for 35 s to transfer the mask pattern to the Mylar film, baking at 120 deg.C for 3min to homogenize the exposed pattern, developing in developer, taking out, washing, drying, baking at 120 deg.C for 3min to evaporate the residual developer and solidify the pattern, and vacuum heat evaporating to deposit layer of metal film with depth greater than two times of the skin depth on the surface of photoresist layer in vacuum environment higher than 5 × 10-5mB, the evaporation rate is about 10nm/s, a photoresist-free place metal is directly plated on a dielectric layer, an evaporated sample is soaked in an acetone solution, the photoresist is dissolved and the metal on the photoresist is taken away, and the metal directly plated on the dielectric layer is left, so that an aluminum pattern array is formed, rows of adjacent two c-shaped openings are rotationally symmetrical in the opening direction, two c-shaped opening resonance rings are 5 mu m apart, the opening angle theta is 30 degrees, the outer ring radius and the inner ring radius of the c-shaped structure are QR 30 mu m and IR 25 mu m respectively, the line width w is 5 mu m, the thickness thm is 0.3 mu m, the length of the dielectric is a 250 mu m, the width b is 130 mu m, and all the c-shaped opening resonance rings are the same in size and the distances are the same.
The low-frequency and high-frequency resonance frequencies of the super surface under the terahertz waveband can be obtained by 8-F THz-TDS measurement and are 0.6154THz and 1.2852THz respectively; the transmission was 0.822, 0.5852, respectively, and the figure of merit was 2.73, 10, respectively.
Example 3
The present invention is described in detail below with reference to the drawings and examples, but the present invention is not limited to the example .
As shown in fig. 1 to 4, the two-layer structure of the super-surface model takes the geometric center of each layers as an origin, the arrangement shape of the metal layers is that the two adjacent c-shaped opening directions are rotationally symmetrical, the upper and lower rows of structures are , the distance between two c-shaped opening resonance rings is 15 μm, the opening angle θ is 90 °, the outer ring radius and the inner ring radius of the c-shaped structure are QR 42 μm and IR 37 μm respectively, the width w of the c-shaped metal ring is QR-IR 5 μm, the thickness is thm 0.4 μm, all the c-shaped opening resonance rings have the same size and the same distance, the distance between the metal layer of the c-shaped structure and the bottom layer of the medium is t 22 μm, the length of the medium is a 256 μm, and the width of the medium is b 140 μm.
The preparation method of the metamaterial with the ring dipole observable under the terahertz frequency is a photoetching method and a vacuum thermal evaporation method, and is characterized by comprising the following steps of:
(1) preparation work: cleaning and dehydrating the silicon wafer and the Mylar film, and forming a base film on the surface of the silicon wafer; adhering the Mylar film on a silicon wafer with the diameter of 3 inches and the thickness of 640 mu m by using a double-sided adhesive tape so as to keep the Mylar film flat in the rotating process; after this step, a dielectric layer having a length of 256 μm, a width of 140 μm and a thickness of 22 μm was obtained.
(2) Preparing metal layer, rotating photoresist at 3000rpm for 40 sec, throwing photoresist to Mylar film, heating at 100 deg.c for 15min, aligning the mask plate with the Mylar film coated with photoresist, exposing in exposure machine for 35 sec to transfer the mask pattern to the coated Mylar film, stoving at 120 deg.c for 3min to produce homogeneous exposed pattern, developing in developer, washing to dry and stoving at 120 deg.c for 3min to evaporate the residual developer and solidify the pattern of photoresist, vacuum heat evaporating to deposit layer of metal film in the depth over two times that of the photoresist layer in vacuum environment higher than 5 × 10-5mB, the evaporation rate is about 10nm/s, the metal without photoresist is directly plated on the dielectric layer, the evaporated sample is soaked in acetone solution, the photoresist is dissolved and the metal on the photoresist is taken away, the metal directly plated on the dielectric layer is left, an aluminum pattern array is formed, the opening directions of two adjacent c-shaped openings in rows are rotationally symmetrical, the distance between two c-shaped opening resonance rings is 15 mu m, the opening angle theta is 90 degrees, and the outer ring half of the c-shaped structure is formedThe radius and the inner ring radius are QR 42 μm and IR 37 μm respectively; the line width w is 5 μm; thickness thm is 0.4 μm; the length of the medium is 256 micrometers, and the width of the medium is 140 micrometers; all the c-shaped split resonant rings have the same size and are equidistant.
The low-frequency and high-frequency resonance frequencies of the super surface under the terahertz waveband can be obtained by 8-F THz-TDS measurement and are 0.5338THz and 1.1611THz respectively; the transmission was 0.6675, 0.50675, respectively, and the figure of merit was 1.83, 5.04, respectively.
Example 4
As shown in fig. 1 to 4, the two-layer structure of the super-surface model takes the geometric center of each layers as an origin, the arrangement shape of the metal layers is that the two adjacent c-shaped opening directions are rotationally symmetrical, the upper and lower rows of structures are , the distance between two c-shaped opening resonance rings is 25 μm, the opening angle θ is 120 °, the outer ring radius and the inner ring radius of the c-shaped structure are QR 55 μm and IR 50 μm respectively, the width w of the c-shaped metal ring is QR-IR 5 μm, the thickness is thm 0.5 μm, all the c-shaped opening resonance rings have the same size and the same distance, the distance between the metal layer of the c-shaped structure and the bottom layer of the medium is t 27 μm, the length of the medium is a 262 μm, and the width of the medium is b 150 μm.
The preparation method of the metamaterial with the ring dipole observable under the terahertz frequency is a photoetching method and a vacuum thermal evaporation method, and is characterized by comprising the following steps of:
(1) preparation work: cleaning and dehydrating the silicon wafer and the Mylar film, and forming a base film on the surface of the silicon wafer; adhering the Mylar film on a silicon wafer with the diameter of 3 inches and the thickness of 640 mu m by using a double-sided adhesive tape so as to keep the Mylar film flat in the rotating process; after this step, a dielectric layer having a length of 262 μm, a width of 150 μm and a thickness of 27 μm was obtained.
(2) Preparing a metal layer: the photoresist was spun onto the Mylar film using a spin coater at 3000rpm for 40 seconds and the sample was heated at 100 ℃ for 15 min. Then, aligning the mask plate with the correct position of the Mylar film coated with the glue; placing the sample in an exposure machine, and carrying out exposure for 35 seconds to transfer the mask pattern to the glued Mylar film; then the sample is put into an oven to be baked for 3min at 120 ℃ to ensure that the photoresist carries out sufficient chemical reaction,developing the baked sample in developer, taking out the sample, washing and drying, baking in oven at 120 deg.c for 3min to evaporate the developer on the sample and to solidify the photoresist pattern, and vacuum vapor plating to form metal film on the surface of the photoresist layer in the vacuum environment higher than 5X 10-5mB, the evaporation rate is about 10nm/s, a photoresist-free place metal is directly plated on a dielectric layer, an evaporated sample is soaked in an acetone solution, the photoresist is dissolved and the metal on the photoresist is taken away, and the metal directly plated on the dielectric layer is left, so that an aluminum pattern array is formed, rows of adjacent two c-shaped openings are rotationally symmetrical in the opening direction, two c-shaped opening resonance rings are 25 micrometers apart, the opening angle theta is 120 degrees, the outer ring radius and the inner ring radius of the c-shaped structure are QR 55 micrometers and IR 50 micrometers respectively, the line width w is 5 micrometers, the thickness thm is 0.5 micrometers, the length of the dielectric is a 262 micrometers, the width of the dielectric is b 150 micrometers, and all the c-shaped opening resonance rings are identical in size and distance.
The low-frequency and high-frequency resonance frequencies of the super surface under the terahertz waveband can be obtained by 8-F THz-TDS measurement and are 0.3876THz and 1.0625THz respectively; the transmission was 0.51062, 0.54879, respectively, and the figure of merit was 1.38, 3.7, respectively.
Example 5
As shown in fig. 1 to 4, the two-layer structure of the super-surface model takes the geometric center of each layers as an origin, the arrangement shape of the metal layers is that the two adjacent c-shaped opening directions are rotationally symmetrical, the upper and lower rows of structures are , the distance between two c-shaped opening resonance rings is 30 μm, the opening angle θ is 140 °, the outer ring radius and the inner ring radius of the c-shaped structure are QR 60 μm and IR 55 μm respectively, the width w of the c-shaped metal ring is QR-IR 5 μm, the thickness is thm 0.6 μm, all the c-shaped opening resonance rings are the same in size and are equal in distance, the distance between the metal layer of the c-shaped structure and the bottom layer of the medium is t 30 μm, the length of the medium is a 272 μm, and the width of the medium is b 160 μm.
The preparation method of the metamaterial with the ring dipole observable under the terahertz frequency is a photoetching method and a vacuum thermal evaporation method, and is characterized by comprising the following steps of:
(1) preparation work: cleaning and dehydrating the silicon wafer and the Mylar film, and forming a base film on the surface of the silicon wafer; adhering the Mylar film on a silicon wafer with the diameter of 3 inches and the thickness of 640 mu m by using a double-sided adhesive tape so as to keep the Mylar film flat in the rotating process; after this step, a dielectric layer with a length of 272 μm, a width of 160 μm and a thickness of 30 μm was obtained.
(2) Preparing metal layer, rotating photoresist at 3000rpm for 40 sec, throwing photoresist to Mylar film, heating at 100 deg.c for 15min, aligning the mask plate with the Mylar film coated with photoresist, exposing in exposure machine for 35 sec to transfer the mask pattern to the coated Mylar film, stoving at 120 deg.c for 3min to produce homogeneous exposed pattern, developing in developer, washing to dry and stoving at 120 deg.c for 3min to evaporate the residual developer and solidify the pattern of photoresist, vacuum heat evaporating to deposit layer of metal film in the depth over two times that of the photoresist layer in vacuum environment higher than 5 × 10-5mB, the evaporation rate is about 10nm/s, a photoresist-free place metal is directly plated on the dielectric layer, an evaporated sample is soaked in an acetone solution, the photoresist is dissolved and the metal on the photoresist is taken away, and the metal directly plated on the dielectric layer is left, so that an aluminum pattern array is formed, rows of adjacent two c-shaped openings are rotationally symmetrical in the opening direction, two c-shaped opening resonance rings are 30 micrometers apart, the opening angle theta is 140 degrees, the outer ring radius and the inner ring radius of the c-shaped structure are QR 60 micrometers and IR 55 micrometers respectively, the line width w is 5 micrometers, the thickness thm is 0.6 micrometers, the length of the dielectric is a 272 micrometers, the width is b 160 micrometers, and all the c-shaped opening resonance rings are identical in size and distance.
The low-frequency and high-frequency resonance frequencies of the super surface under the terahertz waveband can be obtained by 8-F THz-TDS measurement and are 0.3638THz and 1.0472THz respectively; the transmission was 0.42002, 0.56747, respectively, and the figure of merit was 1.3, 4.1, respectively.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto; various modifications and decorations can be made on the invention by anyone skilled in the art without departing from the spirit and scope of the invention, and therefore, the scope of protection of the invention should be determined by the claims of the present application.
Claims (2)
- The double-frequency c-type open ring terahertz ring dipole super-surface is characterized in that the super-surface is obtained by two c-type open ring terahertz rings which are rotationally symmetric on the same plane, a metal layer of the c-type open ring terahertz ring is arranged on a dielectric layer, the arrangement shape of the metal layer is that the two c-type open ring terahertz rings are rotationally symmetric about a z axis, the geometric center of the super-surface is taken as an origin, the distance between the two c-type open ring terahertz rings which are rotationally symmetric is 0 mu m-30 mu m, the opening angle range is 10-140 degrees, the outer ring radius and the inner ring radius range of the c-type open ring terahertz rings are 25 mu m-60 mu m and 20 mu m-55 mu m respectively, the thickness of the metal layer is 0.2 mu m-0.6 mu m, the sizes of all the c-type open ring terahertz rings are the same, the distances are the same, and the distance between the metal layer and the dielectric layer of the c-type open ring terahertz rings is 15 mu m-30 mu m.
- 2. The dual-frequency c-type split ring terahertz ring dipole super-surface as claimed in claim 1, wherein: taking the geometric center of the super surface as an origin, the distance between two c-shaped opening resonance rings which are rotationally symmetrical is 5-25 mu m, the opening angle range is 30-120 degrees, and the outer ring radius and the inner ring radius range of the c-shaped opening resonance rings are 30-55 mu m and 25-50 mu m respectively; the thickness of the metal layer is 0.3-0.5 μm; the distance between the metal layer of the c-type structure and the bottom dielectric layer is 18-27 microns.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364822A (en) * | 2019-08-08 | 2019-10-22 | 天津职业技术师范大学(中国职业培训指导教师进修中心) | The super surface of double frequency c type split ring resonator Terahertz ring dipole and preparation method |
| CN113219576A (en) * | 2021-04-22 | 2021-08-06 | 桂林电子科技大学 | Near-field imaging method based on graphene-metal split ring resonator |
| CN113300115A (en) * | 2021-05-18 | 2021-08-24 | 北京邮电大学 | Electromagnetic metamaterial lens unit and metamaterial lens antenna |
| TWI744180B (en) * | 2021-01-27 | 2021-10-21 | 國立中正大學 | Electromagnetic wave transmission structure and array as well as deviation method of electromagnetic wave transmission |
| CN114062301A (en) * | 2021-11-12 | 2022-02-18 | 西南科技大学 | Dual-band metamaterial terahertz microfluidic sensor |
-
2019
- 2019-08-08 CN CN201921277286.2U patent/CN210006924U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364822A (en) * | 2019-08-08 | 2019-10-22 | 天津职业技术师范大学(中国职业培训指导教师进修中心) | The super surface of double frequency c type split ring resonator Terahertz ring dipole and preparation method |
| TWI744180B (en) * | 2021-01-27 | 2021-10-21 | 國立中正大學 | Electromagnetic wave transmission structure and array as well as deviation method of electromagnetic wave transmission |
| CN113219576A (en) * | 2021-04-22 | 2021-08-06 | 桂林电子科技大学 | Near-field imaging method based on graphene-metal split ring resonator |
| CN113300115A (en) * | 2021-05-18 | 2021-08-24 | 北京邮电大学 | Electromagnetic metamaterial lens unit and metamaterial lens antenna |
| CN113300115B (en) * | 2021-05-18 | 2022-05-31 | 北京邮电大学 | Electromagnetic metamaterial lens unit and metamaterial lens antenna |
| CN114062301A (en) * | 2021-11-12 | 2022-02-18 | 西南科技大学 | Dual-band metamaterial terahertz microfluidic sensor |
| CN114062301B (en) * | 2021-11-12 | 2023-08-18 | 西南科技大学 | Double-frequency-band metamaterial terahertz micro-current sensor |
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