CN111755837B - Terahertz narrow-band absorber with open square-ring structure and manufacturing method thereof - Google Patents
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- G—PHYSICS
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Abstract
The invention discloses a terahertz narrow-band absorber with an open square-ring structure, which comprises a pattern layer, a middle dielectric layer and a reflecting layer, wherein the pattern layer, the middle dielectric layer and the reflecting layer are sequentially arranged from top to bottom; the opening square ring structure unit consists of an outer layer square ring and an inner layer square ring, the center of the inner layer square ring is taken as a rotation center, and 4 openings which are symmetrical in a 90-degree rotation mode are arranged on the inner layer metal square ring; the absorber provided by the invention is composed of simple metal square rings, is simple in structure and easy to integrate, has a symmetrical unit structure, can realize the insensitive effect of x polarization and y polarization, and enhances the practical application significance of the absorber, and for specific frequency points in 1.7 THz-1.8 THz, the terahertz narrow-band absorber with the open square ring structure provided by the scheme has the absorption rate of over 99 percent and the quality factor of more than 190, and can simultaneously realize high absorption rate and high quality factor in the specific frequency points.
Description
Technical Field
The invention relates to the technical field of terahertz waves, in particular to a terahertz narrow-band absorber with an open square ring structure and a manufacturing method thereof.
Background
Terahertz (THz for short) waves generally refer to electromagnetic waves with a frequency of 0.1-10THz, whose long wave band coincides with millimeter waves and whose short wave band coincides with infrared waves. Terahertz waves have unique properties, so terahertz science and technology have wide application in various fields. For example, because the THz wave has very low photon energy and does not damage the measured substance, the THz wave can be used for nondestructive detection; THz waves are useful for object imaging because they are transparent to some dielectric materials; because the THz wave has the characteristics of large bandwidth, good directivity, high safety and the like, the THz wave also has an important role in the field of communication.
Metamaterial-based terahertz absorbers are one of many applications of metamaterials. The terahertz absorber is a device capable of efficiently absorbing incident terahertz waves. The main principle is that different loss mechanisms are utilized to convert the terahertz waves into heat energy or energy in other forms, and the effect of absorbing the terahertz waves is finally achieved. Among various absorbers, absorbers based on a metamaterial structure have recently received much attention from domestic and foreign scholars. Compared with the traditional absorber, the metamaterial absorber has the characteristics of small volume, high absorption rate, easiness in integration and the like. The terahertz metamaterial narrow-band absorber is generally used for selective heat radiators, material detection, biosensing and the like because efficient absorption can be achieved in a specific narrow frequency band.
The terahertz absorber based on the metamaterial and provided by patent document CN104111110A comprises a three-layer structure, a top-layer expanded cross-shaped structure, a middle medium layer and a bottom-layer metal reflecting layer, and the device can achieve 98.7% of absorption efficiency at characteristic frequency points in 1.5-3.5THz, but the quality factor is not high.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the existing terahertz narrow-band absorber cannot realize high absorption rate and high quality factor simultaneously due to the influence of a device structure and materials, and is sensitive to polarization in a specific frequency point.
Aiming at the technical problems, the invention designs the terahertz narrow-band absorber with the open square ring structure, and the absorber structure can realize high absorption rate, high quality factor and polarization insensitivity for specific frequency points in terahertz waves with the absorption frequency of 1.7 THz-1.8 THz, and has the advantages of small size and easiness in processing.
The invention is realized by the following technical scheme:
the invention provides a terahertz narrow-band absorber with an open square ring structure, which comprises a pattern layer, a middle dielectric layer and a reflecting layer which are sequentially arranged from top to bottom, wherein the pattern layer is formed by periodically arranging N multiplied by N open square ring structure units, the pattern layer is tightly attached to the surface of the dielectric layer, and the reflecting layer is connected to the bottom surface of the dielectric layer.
The opening square ring structure unit is composed of an outer layer square ring and an inner layer square ring, the center of the inner layer square ring is taken as a rotation center, and 4 openings which are in 90-degree rotational symmetry are arranged on the inner layer metal square ring.
The further optimization scheme is that 4 90-degree rotationally symmetrical openings are respectively arranged at the middle points of four edges of the inner-layer metal square ring.
The further optimization scheme is that the opening width is as follows: 8-12 μm.
The further optimization scheme is that in the open square ring structural unit:
the outer side length of the outer metal square ring is as follows: 115-125 μm, ring width: 8-12 μm;
the outer side length of the inner layer metal square ring is as follows: 40-50 μm, ring width: 8-12 μm.
The further optimization scheme is that the material of the pattern layer is one of gold, silver and copper, and the thickness of the pattern layer is as follows: 0.1-0.3 μm.
The further optimization scheme is that the material of the intermediate medium layer is one of polyimide, fused quartz and silicon, and the thickness of the intermediate medium layer is as follows: 40-50 μm.
The further optimized scheme is that the reflecting layer is made of one of gold, silver and copper, and the thickness of the reflecting layer is 0.1-0.3 mu m.
The further optimized proposal is that the arrangement period of the open square ring structural unit is 155.0-165.0 μm.
Based on the scheme, the invention also provides a manufacturing method of the terahertz narrow-band absorber with the open square-ring structure, which comprises the following specific steps:
t1: cleaning impurities on the surface of the intermediate medium layer by using deionized water, cleaning oil stains on the surface of the intermediate medium layer by using acetone, cleaning an acetone reagent on the intermediate medium layer by using isopropanol, and finally cleaning the isopropanol of the intermediate medium layer by using deionized water, wherein the cleaning is carried out for 5 minutes by using ultrasonic oscillation;
t2: drying the intermediate medium layer at 120 ℃ for 3 minutes to remove water vapor and increase the adhesiveness of the surface of the intermediate medium layer;
t3: spin-coating photoresist on the intermediate medium layer, and spin-coating at a low speed of 600r/min for 6 s; spin coating at 4000r/min at high speed for 30 s; finally, drying the intermediate medium layer at the temperature of 95 ℃ for 90 s;
t4: transferring the pattern layer graph on the prefabricated mask plate to the photoresist of the intermediate medium layer, and developing by using a developing solution for about 40 s;
t5: washing the sample obtained in T4 with deionized water, and blow-drying the sample with a small dose of nitrogen;
t6: performing magnetron sputtering gold on the middle medium layer, wherein the thickness of the gold layer is 200nm, and stripping off the photoresist by using acetone to obtain a top metal pattern; performing magnetron sputtering on gold below the intermediate medium layer to manufacture a metal reflecting layer, wherein the thickness of the reflecting layer is 200 nm;
t7: the sample from T6 was rinsed with deionized water and blown dry with nitrogen.
The principle of the technical scheme is as follows: when terahertz waves are transmitted to the metal pattern layer, part of incident terahertz wave energy interacts with the outer metal square ring to form electric hexapole resonance, the other part of incident terahertz wave energy interacts with the inner metal split ring to form magnetic dipole resonance, and the rest of terahertz wave energy reaches the bottom metal reflecting layer through the intermediate medium layer. The combined action of the electric hexapole resonance and the magnetic dipole resonance restrains the terahertz energy in the metal pattern layer and the middle dielectric layer, and finally the narrow-band absorption with high quality factor of the absorber is realized, for the specific frequency point in 1.7 THz-1.8 THz, the terahertz narrow-band absorber with the open square ring structure provided by the scheme has the absorption rate of more than 99 percent and the quality factor of more than 190, and can simultaneously realize the high absorption rate and the high quality factor in the specific frequency point. Because the unit structure in the narrow-band absorber has symmetry, the insensitive effect of x polarization and y polarization can be realized, the practical application significance of the absorber is enhanced, the absorber is not limited to the absorption of a polarized wave, and the good absorption performance can be realized under the incidence of the incident terahertz wave of the x polarization and simultaneously the good absorption performance can be realized under the incidence of the incident terahertz wave of the y polarization.
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. the open square ring structure provided by the invention is composed of simple metal square rings, has the characteristics of simple structure and easy integration, has symmetry in the unit structure in the narrow-band absorber, can realize the insensitive effect of x polarization and y polarization, and enhances the practical application significance of the absorber.
2. For a specific frequency point in 1.7 THz-1.8 THz, the absorption rate of the terahertz narrow-band absorber with the open square ring structure exceeds 99%, the quality factor is greater than 190, and high absorption rate and high quality factor can be realized at the specific frequency point.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention.
In the drawings:
FIG. 1 is a schematic structural diagram of a terahertz narrow-band absorber array with an open square-ring structure;
FIG. 2 is a schematic structural diagram of an open square ring structural unit;
FIG. 3 is a metal reflective layer corresponding to the open square ring structure unit;
FIG. 4 is a wiring diagram of a cross-sectional view of a terahertz narrow-band absorber of an open square-ring structure;
FIG. 5 is a current density distribution diagram at a working frequency of a terahertz narrow-band absorber;
FIG. 6 is a schematic diagram of a terahertz wave incident on the surface of a terahertz narrow-band absorber;
FIG. 7 is a graph showing the amplitude curves of the reflected wave and the transmitted wave after the terahertz wave is vertically incident on the absorber;
FIG. 8 is a graph of absorption performance of a terahertz narrow band absorber;
FIG. 9 is a simulation graph of the absorptivity of a terahertz wave incident on a terahertz narrow-band absorber in the x and y polarization directions.
In the drawings:
1-pattern layer, 2-dielectric layer, 3-reflection layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
Example 1
The invention provides a terahertz narrow-band absorber with an open square-ring structure, which comprises a pattern layer, a middle dielectric layer and a reflecting layer, wherein the pattern layer, the middle dielectric layer and the reflecting layer are sequentially arranged from top to bottom;
the opening square ring structure unit consists of an outer layer square ring and an inner layer square ring, the center of the inner layer square ring is taken as a rotation center, and 4 openings which are symmetrical in a 90-degree rotation mode are arranged on the inner layer metal square ring; 4 90-degree rotationally symmetrical openings are respectively arranged at the middle points of the four edges of the inner-layer metal square ring; the opening width is: 8-12 μm.
In the open square ring structure unit:
the outer side length of the outer metal square ring is as follows: 115-125 μm, ring width: 8-12 μm;
the outer side length of the inner layer metal square ring is as follows: 40-50 μm, ring width: 8-12 μm.
The material of the pattern layer is one of gold, silver and copper, and the thickness of the pattern layer is as follows: 0.1-0.3 μm.
The intermediate medium layer is made of one of polyimide, fused quartz and silicon, and the thickness of the intermediate medium layer is as follows: 40-50 μm.
The reflecting layer is made of one of gold, silver and copper, and the thickness of the reflecting layer is 0.1-0.3 mu m.
The arrangement period of the open square ring structural units is 155.0-165.0 μm.
A manufacturing method of a terahertz narrow-band absorber with an open square ring structure comprises the following steps:
t1: cleaning impurities on the surface of the intermediate medium layer by using deionized water, cleaning oil stains on the surface of the intermediate medium layer by using acetone, cleaning an acetone reagent on the intermediate medium layer by using isopropanol, and finally cleaning the isopropanol of the intermediate medium layer by using deionized water, wherein the cleaning is carried out for 5 minutes by using ultrasonic oscillation;
t2: drying the intermediate medium layer at 120 ℃ for 3 minutes to remove water vapor and increase the adhesiveness of the surface of the intermediate medium layer;
t3: spin-coating photoresist on the intermediate medium layer, and spin-coating at a low speed of 600r/min for 6 s; spin coating at 4000r/min at high speed for 30 s; finally, drying the intermediate medium layer at the temperature of 95 ℃ for 90 s;
t4: transferring the pattern layer graph on the prefabricated mask plate to the photoresist of the intermediate medium layer, and developing by using a developing solution for about 40 s;
t5: washing the sample obtained in T4 with deionized water, and blow-drying the sample with a small dose of nitrogen;
t6: performing magnetron sputtering gold on the middle medium layer, wherein the thickness of the gold layer is 200nm, and stripping off the photoresist by using acetone to obtain a top metal pattern; performing magnetron sputtering on gold below the intermediate medium layer to manufacture a metal reflecting layer, wherein the thickness of the reflecting layer is 200 nm;
t7: the sample from T6 was rinsed with deionized water and blown dry with nitrogen.
Example 2
The structure of the terahertz narrow-band absorber with the open square-ring structure designed in this embodiment is as shown in fig. 1 and 2, and the terahertz narrow-band absorber sequentially includes a pattern layer 1, a dielectric layer 2, and a reflective layer 3 from top to bottom.
The metal pattern layer is formed by periodically arranging open square ring structural units, the period P is 160.0 mu m, each open square ring structural unit consists of an outer metal square ring and an inner metal split ring, and the metal pattern layer is tightly attached to the surface of the middle dielectric layer 2 and is similar to a sandwich structure, as shown in fig. 4.
The intermediate dielectric layer is made of silicon dioxide and has a thickness of 60.0 mu m.
The metal reflecting layer is made of gold and has a thickness of 0.2 μm.
The metal pattern layer is made of gold, the thickness is 0.2 μm, and as shown in fig. 2, the specific dimensions are as follows: outer side length l of outer layer metal square ring1120.0 μm, the outer side length of the inner layer metal square ring is l245.0 μm, opening width g 10.0 μm, outer layer metal square ring width w110.0 μm, width w of inner layer metal square ring2＝10.0μm。
The metal reflective layer 3 is a continuous metal layer, and the size of the metal reflective layer corresponding to one period is 160.0 μm, as shown in fig. 3.
When a terahertz wave is perpendicularly incident to the surface of the terahertz narrow-band absorber of the open square ring structure along the z-axis direction, the absorption rate of the absorber can be expressed as a (ω) -1-R (ω) -T (ω), where R (ω) represents the reflectivity and T (ω) represents the transmittance.
When the thickness of the metal reflecting layer is far larger than the skin depth of the metal reflecting layer in the terahertz frequency band, the transmittance of the absorber is almost 0, and the absorption rate formula can be simplified to be A (omega) ≈ 1-R (omega).
As shown in FIG. 5, the designed terahertz narrow-band absorber based on the open square ring structure interacts with incident terahertz waves, the current density distribution of the terahertz narrow-band absorber at the resonance frequency shows electric hexapole resonance and magnetic dipole resonance, and the combined action of the electric dipole and the magnetic dipole realizes high-quality-factor narrow-band absorption of the absorber.
FIG. 6 shows a schematic diagram of the normal incidence of a terahertz wave to the surface of an absorber, where EixIncident wave representing polarization in x-direction, ErxReflected wave showing polarization in x direction, EtxRepresenting the transmitted wave polarized in the x-direction, EryReflected wave showing polarization in y-direction, EtyThe performance of the absorber is studied by analyzing the energy of the reflected wave and the transmitted wave, and when the polarized terahertz wave in the x direction is vertically incident to the terahertz along the-z axis directionIn the case of narrow-band absorbers, only E is considered here, since the metamaterial structure used for the absorber has a certain polarization conversionry、Ety。
As shown in FIG. 7, a simulation graph of x-polarization direction terahertz wave perpendicularly incident to the surface of the absorber, where r isxx、txx、rxy、txyAnd a reflected wave, a transmitted wave, and a reflected wave, respectively, showing polarization in the x-direction and the y-direction. When an x-direction polarized terahertz wave is perpendicularly incident on the surface of the absorber along the-z direction, most of the electromagnetic wave energy at the non-resonant frequency is reflected, and polarization conversion in the reflected wave and the transmitted wave hardly exists, the electromagnetic wave energy at the resonant frequency of 1.77THz interacts with the absorber, most of the energy is absorbed, and only a little energy is reflected, which indicates that perfect absorption is achieved.
An absorption performance simulation graph of the absorber calculated from the simulation data of fig. 8 is shown in fig. 8, in which a (ω) represents the absorption rate, T (ω) represents the transmittance, and R (ω) represents the reflectance. The absorption rate of the designed terahertz narrow-band absorber based on the open square ring structure at 1.77THz is 99.8%, and the quality factor is 196.
When the terahertz waves in the x and y polarization directions are vertically incident to the surface of the absorber, the simulation curve of the absorption rate of the absorber is shown in fig. 9, and it can be observed that the absorption performance of the absorber is almost unchanged for the incident terahertz waves in the x and y polarization directions, so that the terahertz narrow-band absorber can realize insensitivity of x and y polarization.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (9)
1. A terahertz narrow-band absorber with an open square-ring structure is characterized by comprising a pattern layer, a middle dielectric layer and a reflecting layer which are sequentially arranged from top to bottom, wherein the pattern layer is formed by periodically arranging N multiplied by N open square-ring structure units, the pattern layer is tightly attached to the surface of the dielectric layer, and the reflecting layer is connected to the bottom surface of the dielectric layer;
the opening square ring structure unit consists of an outer layer square ring and an inner layer square ring, the center of the inner layer square ring is taken as a rotation center, and 4 openings which are symmetrical in a 90-degree rotation mode are arranged on the inner layer metal square ring; and 4 90-degree rotationally symmetrical openings are respectively arranged at the middle points of four edges of the inner-layer metal square ring.
2. The terahertz narrow-band absorber with an open square-ring structure as claimed in claim 1, wherein the width of the opening is: 8-12 μm.
3. The terahertz narrow-band absorber of an open square-ring structure as claimed in claim 1, wherein in the open square-ring structure unit:
the outer side length of the outer metal square ring is as follows: 115-125 μm, ring width: 8-12 μm;
the outer side length of the inner layer metal square ring is as follows: 40-50 μm, ring width: 8-12 μm.
4. The terahertz narrow-band absorber with an open square-ring structure as claimed in claim 1, wherein the pattern layer is made of one of gold, silver and copper, and the thickness of the pattern layer is: 0.1-0.3 μm.
5. The terahertz narrow-band absorber with an open square ring structure as claimed in claim 1, wherein the intermediate dielectric layer is made of one of polyimide, fused silica and silicon, and has a thickness: 40-50 μm.
6. The terahertz narrow-band absorber with the open square-ring structure as claimed in claim 1, wherein the reflective layer is made of one of gold, silver and copper, and the thickness of the reflective layer is 0.1 μm to 0.3 μm.
7. The terahertz narrow-band absorber with an open square-ring structure as claimed in claim 1, wherein the arrangement period of the open square-ring structure units is 155.0 μm to 165.0 μm.
8. A manufacturing method of a terahertz narrow-band absorber with an open square ring structure is applied to the terahertz narrow-band absorber of claim 1, and is characterized by comprising the following steps:
t1: cleaning impurities on the surface of the intermediate medium layer;
t2: drying the cleaned intermediate medium layer, spin-coating photoresist on the intermediate medium layer, spin-coating at a low speed, and then spin-coating at a high speed;
t3: transferring the pattern layer graph on the prefabricated mask plate to the photoresist of the intermediate medium layer, and then developing by using a developing solution;
t4: performing magnetron sputtering gold above the intermediate medium layer, wherein the thickness of the gold layer is 200nm, and stripping off the photoresist by using acetone to obtain a top metal pattern; and performing magnetron sputtering on gold below the intermediate medium layer to obtain the metal reflecting layer.
9. The method for manufacturing the terahertz narrow-band absorber with the open square-ring structure as claimed in claim 8, wherein a low-speed spin coating speed in T2 is less than or equal to 600r/min, a spin coating time is 6s, a high-speed spin coating speed is greater than or equal to 4000r/min, and a spin coating time is 30 s.
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