CN111799533B - Terahertz angle filter with open double-ring structure and manufacturing method thereof - Google Patents
Terahertz angle filter with open double-ring structure and manufacturing method thereof Download PDFInfo
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- CN111799533B CN111799533B CN202010771735.XA CN202010771735A CN111799533B CN 111799533 B CN111799533 B CN 111799533B CN 202010771735 A CN202010771735 A CN 202010771735A CN 111799533 B CN111799533 B CN 111799533B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/008—Surface plasmon devices
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/007—Manufacturing frequency-selective devices
Abstract
The invention discloses a terahertz angle filter with an open double-ring structure, which comprises a pattern layer and a dielectric layer, wherein the pattern layer is formed by periodically arranging NxN open double-ring structure units, and the pattern layer is tightly attached to the surface of the dielectric layer; the opening double-ring structure unit comprises an inner ring and an outer ring which are opened along the horizontal direction, and the inner ring and the outer ring at the opening are connected in a staggered manner through a connecting bridge; the invention provides the structure which is composed of simple metal rings, has only two layers, and has the characteristics of small volume, simple structure, easy processing and easy integration; the structure has the advantages that the angle filtering frequency of the terahertz waves is a specific frequency point in the terahertz range of 0.4-1.0, the filtering angle at the frequency point is 0 degree, the 3dB angular domain bandwidth is 25 degrees, and the normal incidence transmittance is as high as 94.4 percent.
Description
Technical Field
The invention relates to the technical field of terahertz waveband electromagnetic wave filtering, in particular to a terahertz angle filter with an open double-ring structure and a manufacturing method thereof.
Background
Terahertz (THz) refers to an electromagnetic wave having a frequency in the range of 0.1 to 10THz, which is between the microwave frequency band and the infrared frequency band, which are relatively mature in technology. The realization of complete control of terahertz waves is an important subject in the current scientific research field. Monochromatic plane waves have three basic properties: frequency, polarization, and direction of propagation. Terahertz waves are one kind of electromagnetic waves, and the realization of complete manipulation of terahertz waves is also required to be started from the three basic properties. Currently, there are well established techniques to manipulate frequency and polarization. Compared with frequency and polarization, the angle selection for terahertz waves is more difficult and has been slow.
Conventional angle filtering is typically accomplished using a fabry-perot etalon. However, with the development of micro integrated optical circuits, there is an urgent need for an angle filter that integrates the entire optical circuit into a single device. To date, research on angle filters is largely divided into those based on Zero Index Materials (ZIMs) and those based on dirac-like photonic crystals.
An angular filter based on zero index material has the drawback of very low transmission. Such as silver nanowire arrays grown in anodized aluminum film proposed by Alekseyev et al to realize an incident angle filter of p-polarization (electric field vibration direction in the incident plane) at a wavelength of 600nm, the filter angle is 20 °, but the transmittance is only 12.0% due to impedance mismatch and plasmon metal loss, which greatly limits the application.
The angular filter based on the dirac cone photonic crystal has the defect of complex preparation, especially in large-area preparation. Structures consisting of rods of 10 alternating silicon and silicon dioxide layers such as proposed by Moitra et al show good high transmission angle filter properties over an angle of incidence of 30 °, however such structures are prepared with a high aspect ratio of 3 μm: 0.26 μm multi-layer silicon and silicon dioxide rods are very difficult, especially in large area production.
Disclosure of Invention
The technical problem solved by the invention is as follows: the angle filter has the phenomenon of low transmittance due to impedance mismatch, metal loss of plasmon and the like, and the existing better high-transmission angle filter has a complex structure and is inconvenient for batch preparation, so that the application of the angle filter is greatly limited.
In order to solve the technical problem, the invention provides a terahertz angle filter with an open double-ring structure, which is characterized by comprising a pattern layer and a dielectric layer, wherein the pattern layer is formed by periodically arranging N multiplied by N open double-ring structure units, and the pattern layer is tightly attached to the surface of the dielectric layer;
the opening double-ring structure unit comprises an inner ring and an outer ring which are concentrically arranged, the left side and the right side of the inner ring and the outer ring are both provided with openings along the horizontal direction,
the left side and the right side of the opening double-ring structure unit are respectively provided with a connecting bridge, the left connecting bridge is parallel to the right connecting bridge, and when the left connecting bridge is connected with the outer ring above the opening and the inner ring below the opening, the right connecting bridge is connected with the inner ring above the opening and the outer ring below the opening; when the left connecting bridge connects the inner ring above the opening and the outer ring below the opening, the right connecting bridge connects the outer ring above the opening and the inner ring below the opening.
The further optimization scheme is that the periodic units are arranged in a square periodic mode, and the period is 35.0-40 mu m.
The further optimized scheme is that the material of the pattern layer is one of gold, silver and copper, and the thickness of the pattern layer is 0.1-0.3 mu m.
The further optimization scheme is that the outer diameter of the outer ring is as follows: 14.0-20.0 μm, and the outer diameter of the inner ring is as follows: 8.0-14.0 μm, and the widths of the outer ring and the inner ring are both 1.5-3.5 μm.
The further optimization scheme is that the dielectric layer is made of polyimide or fused quartz, and the thickness of the dielectric layer is 10-200 mu m.
The invention provides a method for manufacturing a terahertz angle filter with an open double-ring structure based on the technical scheme, which comprises the following specific steps:
t1: and (5) baking the dielectric layer substrate on a hot plate at 195 ℃ for 5 minutes, and drying the moisture.
T2: in the ultra-clean room, the medium layer substrate in the T1 is firstly placed on a turntable of a spin coater, the medium layer substrate is sucked on the turntable under the action of vacuum, and the liquid photoresist is placed in the middle of the turntable; the medium layer substrate is driven by the turntable to rotate rapidly, the glue is scattered by low-speed operation for a plurality of seconds, and then the liquid photoresist is uniformly covered on the medium layer substrate by high-speed operation under the action of centrifugal force;
t3: baking the liquid photoresist on the medium layer substrate in T2 for 3-5 minutes to solidify the liquid photoresist, then placing the medium layer substrate on an exposure platform, placing the prepared opening double-ring structure unit mask on the medium layer substrate, and exposing for one minute by using a mercury lamp light source with X-Y direction alignment function;
t4: placing the dielectric layer substrate into a developing solution for developing for 45 seconds, placing the mask in an ultrasonic cleaner for cleaning for one minute after the transfer of the pattern on the mask is completed, and drying the surface of the mask by compressed nitrogen after the mask is taken out;
t5: plating a gold film with the thickness of 0.2 mu m on the dielectric layer substrate by adopting an electron beam evaporation method, wherein the plating rate is 5A/s,
and removing the metal film at the position to be exposed by adopting dry ICP etching, wherein the etching rate is 10A/s.
The principle of the technical scheme is as follows: when the terahertz wave vertically and normally enters the metal layer, the air interface forms impedance matching with the metal layer and the dielectric layer which are made of special structures and materials of the filter, so that the terahertz wave can better pass through the device, and the filter has better transmissivity under normal incidence; the spiral ring-based structure has anisotropic properties, i.e., in the structure, electromagnetic waves propagating in different directions have different propagation properties (e.g., there is a direction that can pass through the structure, and there is a direction that cannot pass through the structure). For a specific frequency point with the angle filtering frequency of the terahertz waves being 0.4-1.0 THz, the filtering angle at the frequency point is 0 degree, the 3dB angular domain bandwidth is 25 degrees, and the normal incidence transmittance is as high as 94.4 percent, so that the scheme not only lays a foundation for the wide application of the filter, but also is simple in structure and easy to process.
When the terahertz waves are obliquely incident to the metal layer, components of a magnetic field of incident waves in a direction perpendicular to the surface of the structure excite magnetic resonance on the metal layer, so that the impedance of the metal layer and the dielectric layer is changed, the air interface is mismatched with the impedance of the metal layer and the impedance of the dielectric layer, the incident waves are difficult to reflect through the device, and a good angle selection characteristic is provided for the filter.
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. the invention provides the structure which is composed of simple metal rings, has only two layers, and has the characteristics of small volume, simple structure, easy processing and easy integration.
2. The structure has the advantages that the angle filtering frequency of the terahertz waves is a specific frequency point in 0.4-1.0 THz, the filtering angle at the frequency point is 0 degree, the 3dB angular domain bandwidth is 25 degrees, and the normal incidence transmittance is as high as 94.4 percent.
3. For terahertz waves vertically and normally incident to the metal layer, impedance matching is formed among the metal layer, the dielectric layer and an air interface in the structure, and the filter has good transmissivity; for the terahertz waves obliquely incident to the metal layer, the dielectric layer and the air interface are mismatched in impedance, and the incident waves are difficult to reflect through the device, so that a better angle selection characteristic is provided for the filter.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention.
Fig. 1 is a schematic structural diagram of a 4 × 4 array terahertz angle filter;
FIG. 2 is a schematic view of an open double-ring structure unit;
FIG. 3 is a cross-sectional view of a unit periodic structure with an open double-ring structure;
FIG. 4 is a schematic diagram of transmission and reflection curves of incident terahertz waves at different angles along with frequency changes;
fig. 5 is a schematic diagram of transmission curves of terahertz waves incident at different angles.
In the drawings:
1-dielectric layer, 2-opening double-ring structural unit and 3-connecting bridge.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
Example 1
As shown in fig. 1, the terahertz filter with the open double-ring structure comprises a pattern layer and a dielectric layer 1, wherein the pattern layer is formed by periodically arranging N × N open double-ring structure units 2, and the pattern layer is tightly attached to the surface of the dielectric layer 1;
the open double-ring structure unit 2 comprises an inner ring and an outer ring which are open in the horizontal direction, and the inner ring and the outer ring at the opening are connected in a staggered mode through the connecting bridge 3.
The open double-ring structural units 2 are arranged in a square periodic manner, and the period is 35.0-40 mu m.
One end of the connecting bridge 3 is connected with the inner ring or the outer ring above the opening, and the other end of the connecting bridge 3 is connected with the outer ring or the inner ring below the opening.
The 2 left and right sides of two ring constitutional units of opening respectively have 1 and connect the bridge, and the bridge is connected on the left side and is parallel with the right side connection bridge.
When the left connecting bridge is connected with the outer circular ring above the opening and the inner circular ring below the opening, the right connecting bridge is connected with the inner circular ring above the opening and the outer circular ring below the opening;
when the left connecting bridge connects the inner ring above the opening and the outer ring below the opening, the right connecting bridge connects the outer ring above the opening and the inner ring below the opening.
The material of the pattern layer is one of gold, silver and copper, and the thickness of the pattern layer is 0.1-0.3 μm.
The outer diameter of the outer ring is as follows: 14.0-20.0 μm, and the outer diameter of the inner ring is as follows: 8.0-14.0 μm, and the widths of the outer ring and the inner ring are both 1.5-3.5 μm.
The dielectric layer is made of polyimide or fused quartz, and the thickness of the dielectric layer is 10-200 mu m.
A method for manufacturing a terahertz filter with an open double-ring structure comprises the following processes of manufacturing a mask, baking a substrate, glue evening, prebaking, exposing, postbaking, developing, coating, etching and the like, and comprises the following specific flows:
t1: and (5) baking the dielectric layer substrate on a hot plate at 195 ℃ for 5 minutes, and drying the moisture.
T2: in the ultra-clean room, the medium layer substrate in the T1 is firstly placed on a turntable of a spin coater, the medium layer substrate is sucked on the turntable under the action of vacuum, and the liquid photoresist is placed in the middle of the turntable; the medium layer substrate is driven by the turntable to rotate rapidly, the glue is scattered by low-speed operation for a plurality of seconds, and then the liquid photoresist is uniformly covered on the medium layer substrate by high-speed operation under the action of centrifugal force;
t3: baking the liquid photoresist on the medium layer substrate in T2 for 3-5 minutes to solidify the liquid photoresist, then placing the medium layer substrate on an exposure platform, placing the prepared opening double-ring structure unit mask on the medium layer substrate, and exposing for one minute by using a mercury lamp light source with X-Y direction alignment function;
t4: placing the dielectric layer substrate into a developing solution for developing for 45 seconds, placing the mask in an ultrasonic cleaner for cleaning for one minute after the transfer of the pattern on the mask is completed, and drying the surface of the mask by compressed nitrogen after the mask is taken out;
t5: plating a gold film with the thickness of 0.2 mu m on the dielectric layer substrate by adopting an electron beam evaporation method, wherein the plating rate is 5A/s,
and removing the metal film at the position to be exposed by adopting dry ICP etching, wherein the etching rate is 10A/s.
Example 2
The structure of the terahertz low-pass angle filter provided by the embodiment is as shown in fig. 1, and the terahertz low-pass angle filter sequentially comprises a metal pattern layer and a dielectric layer 1 from top to bottom, wherein the metal pattern layer is formed by periodically arranging open double-ring structural units 2, as shown in fig. 2 and 3, the open double-ring structural units 2 are composed of inner rings and outer rings which are open along the horizontal direction, and the inner rings and the outer rings at the openings are connected in a staggered manner through connecting bridges 3; the open double-ring structural units 2 are arranged in a square periodic manner, and the period is 36.0 mu m.
The metal pattern layer had a thickness of 0.2 μm and an electrical conductivity of 4.561X 107A gold layer of S/m. The specific dimensions of the metal pattern layer are as follows: outer diameter of the outer ring is rout16.5 μm, and the outer diameter of the inner ring is rin12.0 μm, the width of the outer ring and the inner ring is 2.8 μm, and the opening width is 4.0 μm.
When incident terahertz waves vertically enter the terahertz angle filter of the metamaterial structure along the-z direction, the vertically incident waves have high transmissivity due to the fact that the impedance of the metamaterial structure is matched with the impedance of free space; when the terahertz waves are obliquely incident on the structure, the high reflection of the obliquely incident terahertz waves is realized by the magnetic resonance and the electric resonance which are excited by the component of the magnetic field of the incident waves in the direction vertical to the surface of the structure.
As shown in fig. 4, a graph of the transmission and reflection curves of the incident terahertz waves at different angles (θ is 0 °, θ is 10 °, θ is 20 °, and θ is 30 °) according to the frequency; it can be seen that at different angles of incidence, a resonant peak is produced at the 0.94THz frequency. The terahertz low-pass angle filter has better angle selectivity around 0.94 THz.
As shown in fig. 5, the transmittance distribution of the structure at 0.94THz frequency and different incident wave angles reaches 94.4% at the resonance point when the terahertz wave is perpendicularly incident (θ ═ 0 °), and the transmittance of the terahertz wave rapidly decreases with increasing incident angle, and the 3dB angular domain bandwidth is 25.0 °. The angular bandwidth and transmittance are shown schematically, with a filter angle of 0.94THz, a 3dB angular bandwidth of 44.0, and a normal incidence transmittance of 94.4%.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (7)
1. The terahertz angle filter with the opening double-ring structure is characterized by comprising a pattern layer and a dielectric layer (1), wherein the pattern layer is formed by periodically arranging N multiplied by N opening double-ring structure units (2), and is tightly attached to the surface of the dielectric layer (1);
the opening double-ring structure unit (2) comprises an inner ring and an outer ring which are concentrically arranged, openings along the horizontal direction are formed in the left side and the right side of the inner ring and the outer ring, a connecting bridge (3) is arranged on each of the left side and the right side of the opening double-ring structure unit (2), the left side connecting bridge is parallel to the right side connecting bridge, and when the left side connecting bridge is connected with the outer ring above the opening and the inner ring below the opening, the right side connecting bridge is connected with the inner ring above the opening and the outer ring below the opening; when the left connecting bridge connects the inner ring above the opening and the outer ring below the opening, the right connecting bridge connects the outer ring above the opening and the inner ring below the opening.
2. The terahertz angle filter with the open double-ring structure as claimed in claim 1, wherein the open double-ring structure units (2) are arranged in a square periodic manner, and the period is 35.0 μm to 40 μm.
3. The terahertz angle filter with the open double-ring structure as claimed in claim 1, wherein the pattern layer is made of one of gold, silver and copper, and the thickness of the pattern layer is 0.1 μm to 0.3 μm.
4. The terahertz angle filter of an open double-ring structure according to claim 1,
the outer diameter of the outer ring is as follows: 14.0-20.0 μm, and the outer diameter of the inner ring is as follows: 8.0-14.0 μm, and the widths of the outer ring and the inner ring are both 1.5-3.5 μm.
5. The terahertz angle filter with the open double-ring structure as claimed in claim 1, wherein the dielectric layer is made of polyimide or fused quartz, and the thickness of the dielectric layer is 10 μm to 200 μm.
6. A manufacturing method of the terahertz angle filter for preparing the open double-ring structure of any one of claims 1 to 5 is characterized by comprising the following steps:
t1: removing impurities from the substrate of the dielectric layer and drying;
t2: placing a medium layer substrate on a spin coater turntable in an ultra-clean room, sucking the medium layer substrate on the turntable under the action of vacuum, and placing liquid photoresist in the middle of the turntable; the medium layer substrate is driven by the rotary table to rotate rapidly, the rotary table is firstly rotated at a low speed for a plurality of seconds to disperse the photoresist, and then the rotary table is rotated at a high speed to uniformly cover the liquid photoresist on the medium layer substrate under the action of centrifugal force;
t3: placing a mask of a prefabricated opening double-ring structure unit on a dielectric layer substrate for exposure;
t4: placing the dielectric layer substrate into a developing solution for developing to complete the transfer of the pattern on the mask;
t5: and plating a gold film with the thickness of 0.2 mu m on the dielectric layer substrate by adopting an electron beam evaporation method, wherein the plating rate is 5A/s, and removing the metal film at the position to be exposed by adopting dry ICP etching, wherein the etching rate is 10A/s.
7. The method for manufacturing a terahertz angle filter with an open double-ring structure according to claim 6, wherein in T3, a mercury lamp light source with X-Y direction alignment function is used to place a mask of the prefabricated open double-ring structure unit on the dielectric layer substrate for exposure.
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| CN202034457U (en) * | 2011-04-01 | 2011-11-09 | 中国计量学院 | Terahertz wave filter with cyclical dual-ring opened hollowed structure |
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| KR102476765B1 (en) * | 2015-12-15 | 2022-12-13 | 삼성전자주식회사 | Electronic Device with Antenna |
| CN206789710U (en) * | 2017-06-01 | 2017-12-22 | 南京航空航天大学 | A kind of individual layer simple metal transmission-type multipolarization planar splitter |
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| KR100958832B1 (en) * | 2008-02-27 | 2010-05-24 | 한국과학기술원 | A Novel Compact Tunable Resonator Based on Varactor-Loaded Complementary Split-Ring Resonator |
| CN202034457U (en) * | 2011-04-01 | 2011-11-09 | 中国计量学院 | Terahertz wave filter with cyclical dual-ring opened hollowed structure |
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