CN110873909A - Ultra-wideband polarization insensitive absorber of full ultraviolet-mid-infrared band - Google Patents
Ultra-wideband polarization insensitive absorber of full ultraviolet-mid-infrared band Download PDFInfo
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Abstract
The invention provides a full ultraviolet-mid infrared band ultra-wideband polarization insensitive absorber which comprises a substrate and a metamaterial unit structure arranged on the substrate in a periodic arrangement mode, wherein the metamaterial unit structure comprises a plurality of layers of media/metal films and a single layer of dielectric film/metal which are sequentially arranged, and further comprises an outer layer dielectric cylindrical ring arranged on the outer layer of the plurality of layers of media/metal films, and the height of the outer layer dielectric cylindrical ring is smaller than that of the plurality of layers of media/metal films. The absorber has the frequency band of 200-2000 nm, covers full ultraviolet, visible light, near infrared and intermediate infrared bands, has the average absorption rate of 94.3 percent and the highest absorption rate of 99.89 percent, is insensitive to polarized light, has low cost and can be used for solar energy collection and ultraviolet protection.
Description
Technical Field
The invention relates to the technical field of metamaterials and electromagnetic functions, in particular to an ultra-wideband polarization insensitive absorber of a full ultraviolet-mid-infrared band.
Background
The global energy crisis and the air pollution problem are highlighted day by day, and solar energy is concerned by many countries as an ideal clean energy source. The spectrum of energy radiated to the ground by solar light mainly consists of three bands of ultraviolet (9%), visible light (46%) and infrared (45%). The traditional solar photovoltaic cell can only absorb the energy in the visible light wave band and has low absorptivity, so that the energy in the solar spectrum is not effectively absorbed. Meanwhile, the photovoltaic solar cell is susceptible to weather conditions such as four seasons, day and night, and the like, and particularly, the conventional photovoltaic cell almost loses the effect in dark weather and at night. There is therefore a need for a high absorption, broad band solar energy collection technology that can absorb light in the ultraviolet to infrared bands with high efficiency.
At present, in order to realize broadband absorption, some researches have been made by related technicians, and most of optical perfect absorbers require a relatively complex structure. With the rapid development of micro-nano scale processing technology, a variety of metamaterial structures have been proposed and manufactured by the skilled person to achieve absorption of a wide spectrum band, and related researchers in the field have made a great deal of research on the properties thereof. However, the existing metamaterial structures have three main problems: 1. the absorption rate of the simple metamaterial structure is low, the metamaterial structure is sensitive to oblique incident light, and absorption of broadband spectrum cannot be achieved; 2. in order to ensure high absorption rate, the metamaterial structure needs an elaborate structural design, which increases the difficulty of process implementation, has high preparation cost and limits the popularization of the absorber; 3. most metamaterial structures use metal materials with high electrical conductivity such as noble metal gold/silver, and the like, so that the application of other materials in the absorber is severely limited, the production cost is increased, and the metamaterial is not suitable for popularization, processing and production.
Disclosure of Invention
The invention aims to solve the problems and provides the ultra-wideband polarization insensitive absorber of the full ultraviolet-intermediate infrared band, which has high absorptivity, wider covered absorption frequency band and better incident angle insensitivity.
In order to achieve the purpose, the invention provides the following scheme:
the ultra-wideband polarization insensitive absorber comprises a substrate and a metamaterial unit structure which is arranged on the substrate and is arranged periodically, wherein the metamaterial unit structure comprises a plurality of layers of dielectric/metal films and a single layer of dielectric film/metal which are arranged in sequence, and further comprises an outer layer dielectric cylindrical ring arranged on the outer layer of the plurality of layers of dielectric/metal films, and the height of the outer layer dielectric cylindrical ring is smaller than that of the plurality of layers of dielectric/metal films.
Preferably, the material of the substrate is iron, aluminum or copper.
Preferably, the thickness of the substrate is 180-220 mm.
Preferably, the multilayer dielectric/metal film and the single layer dielectric film/metal are cross-shaped structures.
Preferably, the multilayer medium/metal film is formed by alternately arranging medium strips and metal films, and the thickness of each medium strip is greater than that of each metal film;
preferably, the single-layer dielectric film/metal is a dielectric film and a metal strip which are sequentially arranged, and the thickness of the metal strip is greater than that of the dielectric film.
Preferably, the arm length of the multilayer medium/metal film is 80-120 nm, and the arm width is 55-100 nm; the thickness of the dielectric strip is 140-150 nm, and the thickness of the metal film is 10-15 nm;
preferably, the dielectric film has an arm length of 80-120 nm, an arm width of 55-100 nm and a thickness of 10-15 nm; the arm length of the metal strip is 26-36 nm, the arm width is 22-32 nm, and the thickness is 40-60 nm.
Preferably, the material of the dielectric strip is silicon, silicon dioxide, silicon nitride, aluminum oxide or magnesium fluoride, and the material of two adjacent layers of the metal films of the dielectric strip is different, and is respectively gold or silver, and iron, aluminum or copper;
preferably, the dielectric film is made of silicon, silicon dioxide, silicon nitride, aluminum oxide or magnesium fluoride, and the metal strip is made of iron, aluminum or copper.
Preferably, the outer layer dielectric cylindrical ring is made of silicon, silicon dioxide, silicon nitride, aluminum oxide or magnesium fluoride, the inner radius is 110-170 nm, the outer radius is 130-190 nm, and the height is 540-705 nm.
Preferably, the array period of the metamaterial unit structure is 260-380 nm.
The invention provides an ultra-wideband polarization insensitive absorber of a full ultraviolet-mid-infrared band, which is applied to solar energy capture and ultraviolet protection.
The invention can obtain the following beneficial effects:
1. the absorber of the present invention is generally symmetrical about the xoz plane and the yoz plane, making the absorber insensitive to incident light polarization; the absorption frequency bandwidth of the absorber is widened by adopting a multi-layer medium/metal film structure and utilizing a slow wave effect generated by the multi-layer medium/metal structure; the top layer adopts a single-layer dielectric film/metal structure, and excites a local surface plasmon polariton (LSP) mode from ultraviolet to a visible light region, so that the absorption rate is enhanced.
2. The outer-layer dielectric cylindrical ring provided by the invention is lower than a multi-layer medium/metal film structure in height, is easy to generate a coupling effect with the multi-layer medium/metal film structure, simultaneously excites Surface Plasmon Resonance (SPR), and increases the absorption frequency bandwidth of the absorber.
3. The invention adopts a multilayer medium/metal film structure with a cross structure, which is easy to excite electric dipole resonance and magnetic dipole resonance, so that the electric field intensity and the magnetic field intensity are increased, more electromagnetic waves can be captured by the structure, and the absorption rate is increased.
4. The absorber of the invention has a frequency band of 200-2000 nm, covers all ultraviolet, visible light, near infrared and intermediate infrared bands, and has an average absorption rate of 94.3% and a maximum absorption rate of 99.89%.
5. The absorber provided by the invention has the advantages of excellent absorption performance, simple structure, lower manufacturing cost, stronger practicability and higher flexibility, and is favorable for popularization and application.
Drawings
FIG. 1 is a schematic diagram of a configuration of a full UV-mid IR band ultra-wideband polarization insensitive absorber in accordance with a preferred embodiment of the present invention;
FIG. 2 is a schematic diagram of a metamaterial unit structure in accordance with a preferred embodiment of the present invention;
FIG. 3 is a top and side view of a metamaterial unit structure in accordance with a preferred embodiment of the present invention;
FIG. 4 is a top view of a silicon cylindrical ring according to a preferred embodiment of the present invention;
FIG. 5 is a schematic structural view of a multilayer dielectric/metal film and a single layer dielectric film/metal according to a preferred embodiment of the present invention;
FIG. 6 is a graph of an ultra-wideband absorber reflectivity simulation for a full UV-mid IR band ultra-wideband polarization insensitive absorber in accordance with a preferred embodiment of the present invention;
figure 7 is a graph of ultra-wideband absorber absorbance simulation for a full ultra-violet to mid-infrared band ultra-wideband polarization insensitive absorber in accordance with a preferred embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1:
as shown in fig. 1 to 5, the ultra-wideband polarization insensitive absorber of the full ultraviolet-middle infrared band comprises a substrate 1 and a metamaterial unit structure arranged on the substrate 1 in a periodic arrangement. The metamaterial unit structure comprises a multilayer medium/metal film 2 and a single-layer medium film/metal 3 which are sequentially arranged, and further comprises an outer-layer dielectric cylindrical ring 4 arranged on the outer layer of the multilayer medium/metal film 2, wherein the height of the outer-layer dielectric cylindrical ring 4 is smaller than that of the multilayer medium/metal film 2. The material of the substrate 1 is metallic iron, the substrate 1 is plated with a metallic iron thin film with enough thickness to enable the transmissivity to be 0, and the incident wave enters into the absorber to the maximum extent to be absorbed and lost, so that the thickness of the substrate 1 is designed to be Hd 200 mm. The multilayer dielectric/metal film 2 is composed of dielectric strips 21 and metal films 22 which are alternately arranged in a cross-shaped structure, and six layers of dielectric strips 21 and metal films 22 are provided. The dielectric strips 21 are made of silicon, and the metal films 22 are made of gold and iron which are alternately arranged, that is, the multilayer dielectric/metal film 2 sequentially comprises silicon strips, gold films, silicon strips, iron films, gold films, silicon strips and iron films from bottom to top. The dielectric stripe 21 and the metal film 22 have the same arm length and the same arm width, and the arm length L1 is 94.5nm, the arm width W1 is 82nm, the thickness H1 of the dielectric stripe 21 is 145nm, and the thickness H2 of the metal film 2 is 10 nm. The invention adopts a multilayer medium/metal film structure with a cross structure, which is easy to excite electric dipole resonance and magnetic dipole resonance, so that the electric field intensity and the magnetic field intensity are increased, more electromagnetic waves can be captured by the structure, and the absorption rate is increased; meanwhile, the slow wave effect generated by the multi-layer medium/metal structure widens the absorption frequency bandwidth of the absorber. The single-layer dielectric film/metal 3 is composed of a dielectric film 31 and a metal strip 32 which are sequentially arranged from bottom to top and have a cross-shaped structure, the dielectric film 31 is made of silicon, and the metal strip 32 is made of iron. The length and width of the dielectric film 31 are equal to those of the dielectric strip 21 and the metal film 22, and the thickness is H3-10 nm; the arm length and arm width of the metal strip 32 are smaller: l2-31.5 nm, W2-27 nm, and H4-50 nm. Because the dielectric film 31 is thin and the metal strip 32 has small arm length and arm width, a local surface plasmon polariton (LSP) mode from ultraviolet to visible light regions can be easily excited, and the structure absorption rate is enhanced. Outer dielectric cylinder ring 4 material is silicon, and the radius R is 142nm in the cylinder ring, and outer radius R is 162nm, and height Hr is 610nm, and outer dielectric cylinder ring 4 highly is less than multilayer medium/metallic film 2, easily produces the coupling effect with the multilayer cross structure of inlayer, excites Surface Plasmon Resonance (SPR) simultaneously, has increased the bandwidth of absorber. The array period of the metamaterial unit structure is 324nm, the size of the substrate 1 of the unit structure is L-324 nm, and the width of the unit structure is W-324 nm.
The absorption rate of the absorber is simulated and calculated by the absorber structure in the embodiment through software FDTD Solutions, and in the case of normal incidence, the reflection spectrum is shown in fig. 6, and the absorption spectrum is shown in fig. 7. The formula for the calculation of the absorption rate is: and A is 1-R-T, wherein R is reflectivity and T is transmissivity. By reasonably and optimally designing the structural parameters and materials of the absorber, the impedance of the absorber at a set specific frequency is matched with the impedance of free space (namely the effective dielectric constant and the effective magnetic permeability of the absorbing material are equal). At this time, since the electromagnetic wave completely enters the absorber and is hardly reflected, the reflectivity R is close to zero, as shown in fig. 6; secondly, the metal reflecting layer enables electromagnetic waves not to penetrate through the material, so that the transmissivity T is zero; the electromagnetic waves are thus completely confined inside the device, achieving nearly 100% perfect absorption. Simulation results show that the design shows good characteristics, as shown in fig. 7, the average absorption rate of the absorber is 94.3%, the frequency bandwidth reaches 1800nm (the wavelength band is 200 nm-2000 nm), and the maximum absorption rate is as high as 99.89%.
Example 2:
the structure of the ultra-wideband polarization insensitive absorber of the full ultraviolet-middle infrared band is similar to that of the absorber of the embodiment 1, except that the thickness Hd of the substrate 1 is 210 mm; the multilayer medium/metal film 2 has eight layers of medium strips 21 and metal films 22, namely the structure of the multilayer medium/metal film 2 is sequentially a silicon strip, a gold film, a silicon strip, an iron film, a silicon strip, a gold film, a silicon strip and an iron film from bottom to top; the arm length L1 of the dielectric strip 21 and the metal film 22 is 100nm, the arm width W1 is 70nm, the thickness H1 of the dielectric strip 21 is 150nm, and the thickness H2 of the metal film 2 is 15 nm. The length and width of the dielectric film 31 are equal to those of the dielectric strip 21 and the metal film 22, and the thickness is H3-15 nm; the arm length and arm width of the metal strip 32 are smaller: l2-35 nm, W2-30 nm, and H4-55 nm. The inner radius R of the outer dielectric cylindrical ring 4 is 165nm, the outer radius R is 185nm, and the height Hr is 700 nm. The array period of the metamaterial unit structure is 370nm, the size of the substrate 1 of the unit structure is L-370 nm, and the width of the unit structure is W-370 nm.
The absorption rate of the absorber is simulated and calculated by the absorber structure in the embodiment through software FDTD Solutions, under the condition of vertical incidence, the average absorption rate of the absorber is 92.3%, the frequency bandwidth reaches 1800nm (the wave band is 200 nm-2000 nm), and the maximum absorption rate is as high as 99.32%.
Example 3:
the structure of the ultra-wideband polarization insensitive absorber of the full ultraviolet-middle infrared band is similar to that of the absorber of the embodiment 1, except that the substrate 1 is made of aluminum, and the thickness Hd is 180 mm; the multilayer medium/metal film 2 has four layers, wherein the medium strip 21 is made of silicon dioxide, and the metal film 22 is made of silver and aluminum which are alternately arranged, namely the multilayer medium/metal film 2 sequentially comprises a silicon dioxide strip, a silver film, a silicon dioxide strip, an aluminum film, a silicon dioxide strip, a silver film, a silicon dioxide strip and an aluminum film from bottom to top; the arm length L1 of the dielectric strip 21 and the metal film 22 is 85nm, the arm width W1 is 60nm, the thickness H1 of the dielectric strip 21 is 140nm, and the thickness H2 of the metal film 2 is 12 nm. In the single-layer dielectric film/metal 3, the dielectric film 31 is made of silicon dioxide, and the metal strip 32 is made of aluminum; the length and width of the dielectric film 31 are equal to those of the dielectric strip 21 and the metal film 22, and the thickness is H3-12 nm; the arm length and arm width of the metal strip 32 are smaller: l2-30 nm, W2-23 nm, and H4-40 nm. The inner radius R of the outer layer dielectric cylindrical ring 4 is 110nm, the outer radius R is 135nm, and the height Hr is 540 nm. The array period of the metamaterial unit structure is 260nm, the size length of the substrate 1 of the unit structure is L-260 nm, and the width of the substrate is W-260 nm.
The absorption rate of the absorber is simulated and calculated by the absorber structure in the embodiment through software FDTD Solutions, under the condition of vertical incidence, the average absorption rate of the absorber is 90.5%, the frequency bandwidth reaches 1800nm (the wave band is 200 nm-2000 nm), and the maximum absorption rate is 99.22%.
Example 4:
the structure of the ultra-wideband polarization insensitive absorber of the full ultraviolet-middle infrared band is similar to that of the absorber of the embodiment 1, except that the substrate 1 is made of copper, and the thickness Hd is 190 mm; in the multilayer medium/metal film 2, the medium strips 21 are made of magnesium fluoride, and the metal films 22 are made of gold and copper which are alternately arranged, namely the multilayer medium/metal film 2 sequentially comprises magnesium fluoride strips, gold films, magnesium fluoride strips, copper films, magnesium fluoride strips, gold films, magnesium fluoride strips and copper films from bottom to top; the length L1 of the dielectric strip 21 and the metal film 22 is 105nm, the width W1 is 88nm, the thickness H1 of the dielectric strip 21 is 142nm, and the thickness H2 of the metal film 2 is 13 nm. In the single-layer dielectric film/metal 3, the dielectric film 31 is made of magnesium fluoride, and the metal strip 32 is made of copper; the length and width of the dielectric film 31 are equal to those of the dielectric strip 21 and the metal film 22, and the thickness is H3-13 nm; the arm length and arm width of the metal strip 32 are smaller: l2-28.5 nm, W2-25 nm, and H4-45 nm. The inner radius R of the outer layer dielectric cylindrical ring 4 is 128nm, the outer radius R is 150nm, and the height Hr is 650 nm. The array period of the metamaterial unit structure is 300nm, the size length of the substrate 1 of the unit structure is 300nm, and the width of the substrate is 300 nm.
The absorption rate of the absorber is simulated and calculated by the absorber structure in the embodiment through software FDTD Solutions, under the condition of vertical incidence, the average absorption rate of the absorber is 92.4%, the frequency bandwidth reaches 1800nm (the wave band is 200 nm-2000 nm), and the maximum absorption rate is as high as 99.38%.
Example 5:
the structure of the ultra-wideband polarization insensitive absorber of the full ultraviolet-middle infrared band is similar to that of the absorber of the embodiment 1, except that the thickness Hd of the substrate 1 is 220 mm; the multilayer medium/metal film 2 has four layers, wherein the medium strip 21 is made of silicon nitride, and the metal film 22 is made of gold and iron which are alternately arranged, namely the multilayer medium/metal film 2 sequentially comprises a silicon strip, a gold film, a silicon strip, an iron film, a silicon strip, a gold film, a silicon strip and an iron film from bottom to top; the arm length L1 of the dielectric strip 21 and the metal film 22 is 115.5nm, the arm width W1 is 95nm, the thickness H1 of the dielectric strip 21 is 148nm, and the thickness H2 of the metal film 2 is 14 nm. In the single-layer dielectric film/metal 3, the material of the dielectric film 31 is silicon nitride, the arm length and the arm width of the dielectric film 31 are equal to those of the dielectric strip 21 and the metal film 22, and the thickness is H3-14 nm; the arm length and arm width of the metal strip 32 are smaller: l2-26 nm, W2-22 nm, and H4-60 nm. The inner radius R of the outer layer dielectric cylindrical ring 4 is 150nm, the outer radius R is 174nm, and the height Hr is 560 nm. The period of the array of the metamaterial unit structure is 348nm, the size of the substrate 1 of the unit structure is L-348 nm, and the width of the unit structure is W-348 nm.
The absorption rate of the absorber is simulated and calculated by the absorber structure in the embodiment through software FDTD Solutions, under the condition of vertical incidence, the average absorption rate of the absorber is 91.8%, the frequency bandwidth reaches 1800nm (the wave band is 200 nm-2000 nm), and the maximum absorption rate is as high as 99.45%.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments or portions thereof without departing from the spirit and scope of the invention.
Claims (10)
1. The ultra-wideband polarization insensitive absorber of the full ultraviolet-mid-infrared band is characterized by comprising a substrate (1) and a metamaterial unit structure which is arranged on the substrate (1) in a periodic arrangement mode, wherein the metamaterial unit structure comprises a plurality of layers of media/metal films (2) and a single layer of media/metal (3) which are sequentially arranged, the ultra-wideband polarization insensitive absorber further comprises an outer layer dielectric cylindrical ring (4) which is arranged on the outer layer of the plurality of layers of media/metal films (2), and the height of the outer layer dielectric cylindrical ring (4) is smaller than that of the plurality of layers of media/metal films (2).
2. An ultra-wideband polarization insensitive absorber for the full ultraviolet-mid infrared band, as claimed in claim 1, characterized in that the material of the substrate (1) is iron, aluminum or copper.
3. The ultra-wideband polarization insensitive absorber of the all ultraviolet-mid infrared band as claimed in claim 2, characterized in that the thickness of the substrate (1) is 180 to 220 mm.
4. The ultra-wideband polarization insensitive absorber of the all ultraviolet-mid infrared band of claim 1, wherein the multi-layer dielectric/metal film (2) and the single-layer dielectric film/metal (3) are cross-shaped structures.
5. The ultra-wideband polarization insensitive absorber for the all ultraviolet-mid infrared band as claimed in claim 4, wherein the multi-layer dielectric/metal film (2) is an alternating arrangement of dielectric strips (21) and metal films (22), the thickness of the dielectric strips (21) being greater than the thickness of the metal films (22);
and/or the single-layer dielectric film/metal (3) is a dielectric film (31) and a metal strip (32) which are sequentially arranged, and the thickness of the metal strip (32) is larger than that of the dielectric film (31).
6. The ultra-wideband polarization insensitive absorber of the all ultraviolet-mid infrared band of claim 5, wherein the multi-layer dielectric/metal film (2) has an arm length of 80 to 120nm and an arm width of 55 to 100 nm; the thickness of the dielectric strip (21) is 140-150 nm, and the thickness of the metal film (22) is 10-15 nm;
and/or the dielectric film (31) has an arm length of 80-120 nm, an arm width of 55-100 nm and a thickness of 10-15 nm; the arm length of the metal strip (32) is 26-36 nm, the arm width is 22-32 nm, and the thickness is 40-60 nm.
7. The ultra-wideband polarization insensitive absorber for the all ultraviolet-mid infrared band as claimed in claim 5, characterized in that the material of the dielectric strip (21) is silicon, silicon dioxide, silicon nitride, aluminum oxide or magnesium fluoride, the two layers of the metal film (22) adjacent to the dielectric strip (21) are of different materials, respectively gold or silver, and iron, aluminum or copper;
and/or the dielectric film (31) is made of silicon, silicon dioxide, silicon nitride, aluminum oxide or magnesium fluoride, and the metal strip (32) is made of iron, aluminum or copper.
8. The ultra-wideband polarization insensitive absorber of the full ultraviolet-mid-infrared band as claimed in claim 1, wherein the outer layer dielectric cylindrical ring (4) is made of silicon, silicon dioxide, silicon nitride, aluminum oxide or magnesium fluoride, the inner radius is 110 to 170nm, the outer radius is 130 to 190nm, and the height is 540 to 705 nm.
9. The ultra-wideband polarization insensitive absorber for the full ultraviolet-mid infrared band of claim 1, wherein the array period of the metamaterial unit structure is 260 to 380 nm.
10. An ultra-wideband polarization insensitive absorber for the all ultraviolet-mid infrared band, as claimed in any one of claims 1 to 9, for use in solar capture and ultraviolet protection.
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| CN111273384A (en) * | 2020-03-13 | 2020-06-12 | 西安理工大学 | Ultra-wideband absorber of ultraviolet-visible light-near infrared band |
| CN111690382A (en) * | 2020-06-18 | 2020-09-22 | 中国科学院光电技术研究所 | Transmission type radiation refrigeration inorganic material |
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| CN114460673A (en) * | 2022-01-21 | 2022-05-10 | 中南大学 | High-temperature solar spectrum selective absorber based on plasmon resonance and preparation method thereof |
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| CN111690382A (en) * | 2020-06-18 | 2020-09-22 | 中国科学院光电技术研究所 | Transmission type radiation refrigeration inorganic material |
| CN111690382B (en) * | 2020-06-18 | 2021-11-19 | 中国科学院光电技术研究所 | Transmission type radiation refrigeration inorganic material |
| CN113050204A (en) * | 2021-04-19 | 2021-06-29 | 京东方科技集团股份有限公司 | Micro-lens array substrate, 3D display device and preparation method thereof |
| CN113050204B (en) * | 2021-04-19 | 2023-09-29 | 京东方科技集团股份有限公司 | Micro-lens array substrate, 3D display device and preparation method of micro-lens array substrate |
| CN114114488A (en) * | 2021-11-10 | 2022-03-01 | 中国科学院上海技术物理研究所 | Visible near-infrared metal film reflector with adjustable polarization sensitivity |
| CN114114488B (en) * | 2021-11-10 | 2023-09-12 | 中国科学院上海技术物理研究所 | Visible near infrared metal film reflector with adjustable polarization sensitivity |
| CN114460673A (en) * | 2022-01-21 | 2022-05-10 | 中南大学 | High-temperature solar spectrum selective absorber based on plasmon resonance and preparation method thereof |
| CN114460673B (en) * | 2022-01-21 | 2023-05-26 | 中南大学 | High-temperature solar spectrum selective absorber based on plasmon resonance and preparation method thereof |
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