CN209993865U

CN209993865U - High-power laser device

Info

Publication number: CN209993865U
Application number: CN201920633207.0U
Authority: CN
Inventors: 付亮
Original assignee: Jiangsu Wenrun Optoelectronic Technology Co Ltd
Current assignee: Jiangsu Wenrun Optoelectronic Technology Co Ltd; Jiangsu Wenrun Optoelectronic Co Ltd
Priority date: 2019-05-06
Filing date: 2019-05-06
Publication date: 2020-01-24
Anticipated expiration: 2029-05-06

Abstract

The utility model discloses a high power laser device, including substrate, laser chip and colloid, wherein, laser chip fixes on the substrate, and the colloid is filled on the substrate that carries laser chip. The laser chip is fixed on the base material through solder paste. The base material is formed by red copper and aluminum nitride ceramic. The colloid is epoxy resin. The utility model provides a substrate has the product stability of excellent heat dispersion in order to realize high power type device.

Description

High-power laser device

Technical Field

The utility model relates to a semiconductor laser field, especially a high power laser device.

Background

Semiconductor laser devices are coming into explosion from optical communications to consumer electronics. In the market, if a second high-end model second echelon such as Huashi, OPPO, VIVO, Samsung and the like rapidly responds and popularizes, 10 more billions of smart phones are consumed all over the world every year, and if each mobile phone is embedded with 2-3 VCSEL laser devices, the semiconductor laser devices are in two-three billion market scales.

The optical resonant cavity of the semiconductor laser device is vertical to the substrate of the semiconductor chip, can realize the laser emission on the surface of the chip, and has the advantages of low threshold current, stable single-wavelength work, easy high-frequency modulation, easy two-dimensional integration, no cavity surface threshold damage, dynamic single-mode work, circular symmetric light spots, high optical fiber coupling efficiency and the like.

Since birth, semiconductor laser devices are used as core devices for new generation optical storage and optical communication applications, and provide a new approach for the demand of internet and the continuous improvement of optical storage density.

With the intensive research and the expansion of application requirements of semiconductor laser devices, the semiconductor laser device not only plays an increasingly important role in the fields of mobile phones, consumer electronics and the like, but also can be used for face recognition, 3D sensing, gesture detection, VR (virtual reality)/AR (augmented reality)/MR (mixed reality) and the like. Of course, the internet of things, 5G communication, RF elements, ADAS (advanced driving system), etc. may be applied in large quantities in the future, so that the future application and market popularity should be more emphasized.

Market research institutes predict that the market size of semiconductor laser devices in 2015 is $ 9.546 billion, the growth to $ 31.241 billion is expected by 2022, the composite annual growth rate during 2016 ~ 2022 can reach 17.3%. semiconductor laser devices are widely used due to their compact size, high reliability, low power consumption and low manufacturing cost.

Disclosure of Invention

The utility model aims to solve the technical problem that overcome prior art not enough and provide a high power laser device, the utility model discloses realize high power, high reliability, low-power consumption.

The utility model discloses a solve above-mentioned technical problem and adopt following technical scheme:

according to the utility model provides a high power laser device, including substrate, laser chip and colloid, wherein, laser chip fixes on the substrate, and the colloid is filled on the substrate that carries laser chip.

As a further optimization scheme of high power laser device, laser chip passes through the tin cream and fixes on the substrate.

As a further optimization scheme of high power laser device, the substrate is red copper and the ceramic substrate that forms of aluminium nitride.

As a further optimization scheme of high power laser device, the colloid is epoxy.

As a further optimization scheme of high power laser device, the size of substrate is 3.8mm 4.0mm 0.8 mm.

The utility model adopts the above technical scheme to compare with prior art, have following technological effect:

(1) the red copper base material used in the utility model has super heat-conducting property up to 386.4 w/(m.k);

(2) the solder paste bonding bracket and the laser chip used in the utility model can achieve 99% of heat conduction;

(3) the laser chip used in the utility model has the advantages that the coupling efficiency of the laser chip and the optical fiber is greatly improved due to the small divergence angle and the circularly symmetric far and near field distribution, and a complex and expensive light beam shaping system is not needed, so that the coupling efficiency with the multimode optical fiber is proved to be more than 90%; the optical cavity is extremely short in length, so that the longitudinal mode spacing is enlarged, single longitudinal mode operation can be realized in a wider temperature range, and the dynamic modulation frequency is high; the reduction of the cavity volume leads to a spontaneous emission factor which is several orders of magnitude higher than that of a common end-emitting laser, which leads to a great improvement in many physical properties; the on-chip test can be carried out, and the development cost is greatly reduced; the light-emitting direction is vertical to the substrate, so that the integration of a high-density two-dimensional area array can be easily realized, and higher power output is realized;

(4) the epoxy resin used in the utility model can realize perfect air tightness to deal with the severe service environment of the prior application market;

(5) the utility model provides a combination of adoption can perfectly realize present illumination market to the high power demand more than 3W.

Drawings

Fig. 1 is a top view of the high power laser device of the present invention.

Fig. 2 is a sectional view taken along line AB in fig. 1.

The reference numerals in the figures are to be interpreted: 1-epoxy resin, 2-laser chip, 3-base material frame, 4-alumina ceramic and 5-substrate main material.

Detailed Description

The technical scheme of the utility model is further explained in detail with the attached drawings as follows:

fig. 1 is a top view of the high power laser device of the present invention; as shown in fig. 2, which is a cross-sectional view, a novel high-power laser device comprises a base material frame 3, alumina ceramics 4, a base plate main material 5, a laser chip 2 and epoxy resin 1; the laser chip is fixed on the base material through solder paste, and the epoxy resin is filled on the laser chip;

the carrier is a base material formed by red copper with super heat conductivity and aluminum nitride ceramics;

the solder paste is a semiconductor device bonding material;

the chip is a laser chip;

the colloid is epoxy resin.

A manufacturing method of a novel high-power laser device comprises the following steps:

providing a base material which is 3.8mm 4.0mm 0.8mm in appearance, 2.6mm 2.8mm in luminous surface and formed by red copper with super heat conduction performance and aluminum nitride ceramics;

fixing the laser chip on the base material through solder paste;

step three, stirring and defoaming the epoxy resin by using a vacuum stirrer to obtain a colloid;

and step four, filling the colloid obtained in the step three on the base material carrying the laser chip.

The red copper base material used in the utility model has super heat conductivity up to 386.4 w/(m.k); the solder paste bonding bracket and the laser chip used in the utility model can achieve 99% of heat conduction; the laser chip used in the utility model has the advantages that the coupling efficiency of the laser chip and the optical fiber is greatly improved due to the small divergence angle and the circularly symmetric near-far field distribution, and a complex and expensive light beam shaping system is not needed, so that the coupling efficiency with the multimode optical fiber is proved to be more than 90%; the optical cavity is extremely short in length, so that the longitudinal mode spacing is enlarged, single longitudinal mode operation can be realized in a wider temperature range, and the dynamic modulation frequency is high; the reduction of the cavity volume leads to a spontaneous emission factor which is several orders of magnitude higher than that of a common end-emitting laser, which leads to a great improvement in many physical properties; the on-chip test can be carried out, and the development cost is greatly reduced; the light-emitting direction is vertical to the substrate, so that the integration of a high-density two-dimensional area array can be easily realized, and higher power output is realized; the epoxy resin used in the utility model can realize perfect air tightness to deal with the severe service environment of the existing application market; the utility model provides a combination of adoption can perfectly realize present illumination market to the high power demand more than 3W.

It is obvious that the above embodiments of the present invention are only examples for clearly illustrating the present invention, and are not limitations to the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And such obvious changes and modifications which fall within the spirit of the invention are deemed to be covered by the present invention.

Claims

1. The high-power laser device is characterized by comprising a base material, a laser chip and a colloid, wherein the laser chip is fixed on the base material, and the colloid is filled on the base material loaded with the laser chip.

2. The high power laser device as claimed in claim 1, wherein the laser chip is fixed on the substrate by solder paste.

3. The high power laser device as claimed in claim 1, wherein the substrate is a substrate formed of copper and aluminum nitride ceramic.

4. A high power laser device according to claim 1, wherein said glue is epoxy.

5. A high power laser device according to claim 1, wherein the substrate has a size of 3.8mm by 4.0mm by 0.8 mm.