CN209989499U - Heater for reducing oxygen content of single crystal and increasing crystal growth speed - Google Patents
Heater for reducing oxygen content of single crystal and increasing crystal growth speed Download PDFInfo
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- CN209989499U CN209989499U CN201920143247.7U CN201920143247U CN209989499U CN 209989499 U CN209989499 U CN 209989499U CN 201920143247 U CN201920143247 U CN 201920143247U CN 209989499 U CN209989499 U CN 209989499U
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Abstract
The utility model provides a reduce single crystal oxygen content and improve heater of growing brilliant speed, including first heating portion, second heating portion and third heating portion are connected with first heating portion respectively, and second heating portion and third heating portion are located same one side of first heating portion. The beneficial effects of the utility model are that simple structure is convenient for use at straight pull single crystal in-process, and the one end of first heating portion is located to second heating portion and third heating portion, and just first heating portion comprises the heating plate that length is unequal, and the second heating portion is back the type structure, and the third heating portion is platelike structure, reduces whole heater height, improves the effective area ratio of generating heat of heater, reduces oxygen content, improves the pulling rate of straight pull single crystal in-process.
Description
Technical Field
The utility model belongs to the technical field of single crystal production equipment, especially, relate to a heater that reduces single crystal oxygen content and improves crystal growth speed.
Background
The oxygen content in the crystal is generated by the reaction of the quartz crucible and the molten silicon in the operation process, wherein a part of oxygen can escape from the molten silicon and is discharged out of the furnace body along with a gas circulation system in the furnace, and oxygen which is not discharged in time can be melted into the melt again or gathered near a crystallization area and enters the single crystal in the crystal growth process; another portion moves into the crystallization zone with the convection current of the melt and into the single crystal as it grows.
In the oxygen content generation mechanism in the single crystal growth process, part of the temperature stabilizing process is operated at high temperature because the gas-liquid-solid three-phase line is positioned at the same position for a long time, so that the crucible is corroded by the molten silicon to generate a liquid level line, and the original coating at the liquid level line is damaged to ensure that the molten silicon reacts with the crucible at the position to generate more oxygen content, so that the oxygen content is high. The other part of the temperature stabilizing process has longer high temperature time, and the quartz crucible reacts with the molten silicon more intensely to generate more oxygen. Meanwhile, in the process of equal diameter, the lower part of the quartz crucible reacts violently with the molten silicon to generate more oxygen, and the oxygen enters the single crystal along with the convection of the melt.
In addition in the equal footpath in-process heater upper portion of single crystal partly for guaranteeing the suitable temperature heat supply of crystallization, very big partly unnecessary heat can direct radiation to fused silicon surface in addition, on the crystal bar, or radiate on the quartz crucible, the rethread thermal conduction and thermal radiation pass fused silicon and crystal bar surface, make liquid level upper portion crucible and fused silicon contact department high temperature, the aggravation reaction leads to the fact oxygen content to rise, also cause the radial temperature gradient grow of fuse-element simultaneously, the vertical temperature gradient of crystal diminishes, be unfavorable for single crystal pulling speed to promote like this.
Most of the existing heaters shorten the whole heater to reduce the reaction area of the heater and the silicon melt and reduce the generation of oxygen content, and the design disadvantage is that the lower part of the heater generates less heat and is not beneficial to material melting.
Disclosure of Invention
In view of the technical problem, the utility model provides a reduce single crystal oxygen content and improve heater of long brilliant speed especially is fit for czochralski crystal in-process and uses, reduces the whole heater height that generates heat, improves the effective heat area ratio of heater, reduces oxygen content, improves the pulling rate of czochralski crystal process.
In order to solve the technical problem, the utility model discloses a technical scheme is: a heater for reducing the oxygen content of a single crystal and improving the crystal growth speed comprises a first heating part, a second heating part and a third heating part, wherein the second heating part and the third heating part are respectively connected with the first heating part, and the second heating part and the third heating part are positioned on the same side of the first heating part.
Furthermore, the first heating part comprises a plurality of first heating pieces and second heating pieces, and the first heating pieces and the second heating pieces are sequentially and alternately connected.
Furthermore, the length of the first heating plate is larger than that of the second heating plate, and the first heating plate is flush with one end of the second heating plate.
Furthermore, the second heating parts and the third heating parts are alternately arranged, and the second heating parts are symmetrically arranged at one end of the first heating part.
Furthermore, the third heating part is symmetrically arranged at one end of the first heating part.
Further, the second heating part is of a reverse-type structure.
Further, the first heating plate is U-shaped.
Further, the second heating plate is U-shaped.
The utility model has the advantages and positive effects that:
1. by adopting the technical scheme, the heater for reducing the oxygen content of the single crystal and improving the crystal growth speed is simple in structure and convenient to use in the Czochralski single crystal process, the second heating part and the third heating part are arranged at one end of the first heating part, the first heating part is composed of heating sheets with different lengths, the second heating part is of a loop structure, the third heating part is of a plate structure, the height of the whole heater is reduced, the effective heating area ratio of the heater is improved, the oxygen content is reduced, and the pulling speed in the Czochralski single crystal process is improved;
2. the second heating part and the third heating part are arranged at one end of the first heating part, the structures of the second heating part and the third heating part are different, the whole length of the heater is compressed, the first heating part of the heater is formed by connecting heating sheets with different lengths in turn, the upper end of the heater is concave-convex, the heat productivity of the upper part of the heater is reduced, the corrosion to a liquid level line is reduced, the heat radiated to a silicon melt surface, a crystal bar or a quartz crucible is also reduced, the radial temperature gradient is reduced, the longitudinal temperature gradient of a crystal is increased, and the single crystal pulling speed is favorably improved;
3. the second heating part is a square-shaped structure, so that the heating area of the lower part of the heater is large, the heat productivity is uniform, the melting of silicon solids in the material melting process is facilitated, the influence on melting materials at the lower part of the crucible due to the integral shortening of the heater is avoided, meanwhile, the loop design of the second heating part is wide, the resistance value of the blade is small, the lower part of the heater can only generate less heat, the melting materials are facilitated, the quartz crucible is prevented from being corroded violently by high temperature due to the fact that crystal pulling generates too much heat, the heat convection movement route of the molten silicon is prolonged, the amount of oxygen-containing substances moving to the single crystal along with the heat convection.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the present invention;
fig. 2 is a schematic structural view of a crucible according to an embodiment of the present invention, which is placed in a heater.
In the figure:
1. first heating plate 2, second heating plate 3, second heating portion
4. Third heating part 5, crucible
Detailed Description
The invention will be further described with reference to the accompanying drawings and specific embodiments.
Fig. 1 and fig. 2 show the structure of an embodiment of the present invention, specifically show the structure of this embodiment, this embodiment relates to a heater that reduces single crystal oxygen content and improves long crystal speed for czochralski single crystal in-process heats the crucible, and this heater has the first heating portion, second heating portion and the third heating portion of different structures, reduces whole heater's the height of generating heat, improves heater effective heat area ratio, reduces oxygen content, improves the pulling rate of czochralski single crystal in-process.
As shown in fig. 1 and 2, the heater for reducing the oxygen content of the single crystal and increasing the crystal growth speed is used for heating a crucible in a single crystal pulling process, and comprises a first heating part, a second heating part 3 and a third heating part 4, wherein the first heating part, the second heating part 3 and the third heating part 4 are all used for heating the crucible 5, the first heating part is used for heating the upper part of the crucible 5, the second heating part 3 and the third heating part 4 are used for heating the lower part of the crucible 5, the second heating part 3 and the third heating part 4 are respectively connected with the first heating part, so that the first heating part, the second heating part 3 and the third heating part 4 form an integral heater, and the second heating part 3 and the third heating part 4 are positioned on the same side of the first heating part, which is convenient for the first heating part to heat the upper part of the same side of the crucible 5, the lower part of crucible 5 is heated to second heating portion 3 and third heating portion 4, and the structure of first heating portion, second heating portion 3 and third heating portion 4 is inequality, improves the effective area ratio of generating heat of heater, improves the pulling rate of czochralski single crystal process, reduces the oxygen content of czochralski single crystal in-process single crystal.
Specifically, the first heating part comprises a plurality of first heating sheets 1 and a plurality of second heating sheets 2, the first heating sheets 1 and the second heating sheets 2 are sequentially and alternately connected, and the plurality of first heating sheets 1 and the plurality of second heating sheets 2 are connected end to form a ring shape, so that the crucible 5 is conveniently placed in the heater to carry out all-around heating on the crucible 5; that is, a first heating plate 1 is connected to a second heating plate 2, the other side of the second heating plate 2 is connected to another first heating plate 1, the first heating plate 1 is connected to another second heating plate 2, and so on, the first heating plate 1 and the second heating plate 2 are alternately connected in sequence, and are connected end to form an annular structure, which is convenient for heating the crucible 5. The length of the first heating plate 1 is greater than that of the second heating plate 2, and the first heating plate 1 and the second heating plate 2 are flush with each other at one end when being installed, the other ends of the first heating plate 1 and the second heating plate 2 are not parallel and level, and present a concave-convex shape, that is, one end of the first heating part is parallel and level, the other end is not parallel and level, and present a concave-convex shape, the non-parallel end is the upper end of the heater for reducing the oxygen content of the single crystal and increasing the crystal growth speed, the lengths of the first heating plate 1 and the second heating plate 2 are unequal, and present a concave-convex shape after being connected and installed, so that the upper heating value of the first heating part can be reduced, the corrosion to the liquid level line of the crucible 5 can be reduced, and the heat radiated to the surface of the molten silicon or the crystal, or the heat radiated to the crucible 5 reduces the radial temperature gradient, increases the longitudinal temperature gradient of the crystal and improves the pulling speed in the process of pulling the single crystal. Here, the first heating plate 1 and the second heating plate 2 may have a U-shaped structure, a plate-shaped structure, a T-shaped structure, or other structures, and are selected according to actual requirements, preferably, the first heating plate 1 and the second heating plate 2 are U-shaped structures, so that the first heating plate 1 and the second heating plate 2 are connected, and the first heating plate 1 of the U-shaped structure and the second heating plate 2 of the U-shaped structure are convenient for heating the crucible, and reduce the weight of the whole heater, and meanwhile, the whole structure of the ring-shaped structure of the first heating part formed by sequentially and alternately connecting the first heating plate 1 and the second heating plate 2 is stable and not easy to deform.
The connection mode of the first heating plate 1 and the second heating plate 2 may be welding, or may be integrally formed, or may be a connection piece such as a bolt, or another connection mode, which is selected according to actual requirements, and preferably, here, the first heating plate 1 and the second heating plate 2 are integrally formed, so that the first heating part has a stable structure and a long service life. The number of the first heating plates 1 and the second heating plates 2 is multiple, and the first heating parts are selected according to the diameter of the crucible, and the diameter of the annular structure formed by the first heating parts is matched with the diameter of the crucible 5, so that the crucible 5 can be conveniently placed in a heater, and the heater can heat the crucible 5.
The second heating part 3 and the third heating part 4 are both disposed at one side of the first heating part, and the second heating part 3 and the third heating part 4 are respectively connected to the first heating part, here, preferably, the second heating part 3 and the third heating part 4 are respectively connected to one end of the first heating piece 1 of the first heating part, which is flush with the second heating piece 2, so as to facilitate the installation of the second heating part 3 and the third heating part 4. The number of the second heating part 3 and the third heating part 4 is plural, and is selected according to actual requirements, and the second heating part 3 and the third heating part 4 are used for heating the lower part of the crucible. The second heating parts 3 and the third heating parts 4 are alternately arranged, the second heating parts 3 are not connected with the third heating parts 4, the second heating parts 3 are symmetrically arranged at one ends of the first heating parts, the third heating parts 4 are symmetrically arranged at one ends of the first heating parts, so that the whole heater is of a symmetrical structure along the central line of the first heating parts, the heating amount of the heater is uniform, the crucible 5 is uniformly heated, the silicon solid in the crucible 5 is uniformly melted, the amount of oxygen-containing substances moving to a single crystal along with the thermal convection of molten silicon is reduced, and the oxygen content of the single crystal is reduced.
The second heating part 3 is a circular-shaped structure, that is, the second heating part 3 is provided with a through hole to reduce the weight of the second heating part 3, and the second heating part 3 may be a circular-shaped structure, a square-shaped structure, a trapezoidal-shaped structure, or a structure with other shapes, and is selected according to actual requirements. Preferably, the second heating part 3 is a square-shaped zigzag structure, a connecting part extends from one side of the second heating part 3, and the other end of the connecting part is connected with the first heating part, where the connecting mode of the second heating part 3 and the first heating part may be welding, may be connection through a connecting piece such as a bolt, and may also be integrally formed, or other structures, and is selected according to actual requirements, and preferably, the second heating part 3 and the first heating part are integrally formed, so that the overall structure of the heater is compact and stable, and the service life is long. Second heating portion 3 adopts back type structure, make the heater heat area big, calorific capacity is even, do benefit to the melting material process silicon solid and melt, avoided leading to crucible lower part melting material to receive the influence because the heater is whole to shorten, the design of 3 back type structures of second heating portion makes 3 broad of second heating portion simultaneously, the blade resistance is less, make the heater lower part can only produce heat less, do benefit to melting material, avoid pulling the crystal to produce too much quartz crucible that leads to of heat simultaneously and receive high temperature corrosion acutely, the thermal convection motion route of silicon melt has also been prolonged, the volume of oxygen-containing substance along with silicon melt thermal convection motion to the single crystal has been reduced, oxygen content is reduced.
The third heating unit 4 has a plate-like structure, one end of the third heating unit 4 is connected to the first heating unit, and an electrode corner is attached to the other end of the third heating unit 4, so that the heater can be electrically heated. The third heating part 4 and the first heating part may be connected by welding, or may be fixedly connected by a connecting member such as a bolt, or may be integrally formed, or may be connected by other fixing means, and the connection manner of the third heating part 4 and the first heating part is preferably integrally formed according to actual requirements, so that the overall structure of the heater is compact and stable, and the service life of the heater is long.
The working process of the embodiment: the first heating plates 1 and the second heating plates 2 are sequentially and alternately connected, and the first heating plates 1 and the second heating plates 2 are alternately connected and then connected end to form a ring shape to form a first heating part for heating the upper part of the crucible 5, the second heating parts 3 and the third heating parts 4 are respectively installed at one ends of the first heating plates 1 of the first heating part, which are parallel to the second heating plates 2, the second heating parts 3 and the third heating parts 4 are alternately arranged, the second heating parts 3 are symmetrically arranged, and the third heating parts 4 are symmetrically arranged. After the second heating part 3 and the third heating part 4 are installed, the crucible 5 is placed in the heater so that the heater heats the crucible 5 in the Czochralski single crystal process.
The utility model has the advantages and positive effects that: by adopting the technical scheme, the heater for reducing the oxygen content of the single crystal and improving the crystal growth speed is simple in structure and convenient to use in the Czochralski single crystal process, the second heating part and the third heating part are arranged at one end of the first heating part, the first heating part is composed of heating sheets with different lengths, the second heating part is of a loop structure, the third heating part is of a plate structure, the height of the whole heater is reduced, the effective heating area ratio of the heater is improved, the oxygen content is reduced, and the pulling speed in the Czochralski single crystal process is improved; the second heating part and the third heating part are arranged at one end of the first heating part, the structures of the second heating part and the third heating part are different, the whole length of the heater is compressed, the first heating part of the heater is formed by connecting heating sheets with different lengths in turn, the upper end of the heater is concave-convex, the heat productivity of the upper part of the heater is reduced, the corrosion to a liquid level line is reduced, the heat radiated to a silicon melt surface, a crystal bar or a quartz crucible is also reduced, the radial temperature gradient is reduced, the longitudinal temperature gradient of a crystal is increased, and the single crystal pulling speed is favorably improved; the second heating part is a square-shaped structure, so that the heating area of the lower part of the heater is large, the heat productivity is uniform, the melting of silicon solids in the material melting process is facilitated, the influence on melting materials at the lower part of the crucible due to the integral shortening of the heater is avoided, meanwhile, the loop design of the second heating part is wide, the resistance value of the blade is small, the lower part of the heater can only generate less heat, the melting materials are facilitated, the quartz crucible is prevented from being corroded violently by high temperature due to the fact that crystal pulling generates too much heat, the heat convection movement route of the molten silicon is prolonged, the amount of oxygen-containing substances moving to the single crystal along with the heat convection.
While one embodiment of the present invention has been described in detail, the description is only a preferred embodiment of the present invention, and should not be considered as limiting the scope of the present invention. All the equivalent changes and improvements made according to the application scope of the present invention should still fall within the patent coverage of the present invention.
Claims (8)
1. A heater for reducing the oxygen content of a single crystal and improving the crystal growth speed is characterized in that: the heating device comprises a first heating part, a second heating part and a third heating part, wherein the second heating part and the third heating part are respectively connected with the first heating part, and the second heating part and the third heating part are positioned on the same side of the first heating part.
2. The heater of claim 1 for reducing oxygen content of a single crystal to increase growth rate, wherein: the first heating part comprises a plurality of first heating pieces and second heating pieces, and the first heating pieces are sequentially and alternately connected with the second heating pieces.
3. The heater of claim 2 for reducing oxygen content of a single crystal to increase growth rate, wherein: the length of first heating plate is greater than the length of second heating plate, first heating plate with second heating plate one end parallel and level.
4. A heater for reducing the oxygen content of a single crystal and increasing the growth rate of the crystal according to any one of claims 1 to 3, wherein: the second heating parts and the third heating parts are alternately arranged, and the second heating parts are symmetrically arranged at one end of the first heating part.
5. The heater of claim 4 for reducing oxygen content of a single crystal to increase growth rate, wherein: the third heating part is symmetrically arranged at one end of the first heating part.
6. The heater of claim 5 for reducing oxygen content of a single crystal to increase growth rate, wherein: the second heating part is of a clip structure.
7. A heater for reducing oxygen content of a single crystal and increasing a growth rate according to claim 2 or 3, wherein: the first heating plate is U-shaped.
8. The heater of claim 7 for reducing oxygen content of a single crystal to increase growth rate, wherein: the second heating plate is U-shaped.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920143247.7U CN209989499U (en) | 2019-01-28 | 2019-01-28 | Heater for reducing oxygen content of single crystal and increasing crystal growth speed |
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| CN201920143247.7U CN209989499U (en) | 2019-01-28 | 2019-01-28 | Heater for reducing oxygen content of single crystal and increasing crystal growth speed |
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| CN209989499U true CN209989499U (en) | 2020-01-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115198350A (en) * | 2022-07-15 | 2022-10-18 | 麦斯克电子材料股份有限公司 | Thermal field system capable of reducing oxygen content of silicon crystal and process method |
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2019
- 2019-01-28 CN CN201920143247.7U patent/CN209989499U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115198350A (en) * | 2022-07-15 | 2022-10-18 | 麦斯克电子材料股份有限公司 | Thermal field system capable of reducing oxygen content of silicon crystal and process method |
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