CN209981221U - Light-operated thyristor - Google Patents
Light-operated thyristor Download PDFInfo
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- CN209981221U CN209981221U CN201921074953.7U CN201921074953U CN209981221U CN 209981221 U CN209981221 U CN 209981221U CN 201921074953 U CN201921074953 U CN 201921074953U CN 209981221 U CN209981221 U CN 209981221U
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- 238000005286 illumination Methods 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000001960 triggered effect Effects 0.000 description 4
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Abstract
The utility model relates to a light-operated thyristor, light-operated thyristor wherein had both had the negative pole short-circuit point, had also had the negative pole n + region that links together, when improving device dv/dt characteristic, also can not make the alpha 2 value of device reduce. Therefore, when the sum of α 1 and α 2 approaches 1 infinitely and α 2 is not decreased, the device receives sufficient illumination intensity to complete conduction under the irradiation of light with a wavelength suitable for absorption by silicon. The utility model discloses a light-operated thyristor not only possesses high voltage, heavy current, can switch on fast moreover.
Description
Technical Field
The utility model relates to a semiconductor field, concretely relates to light-operated thyristor.
Background
At present, the maximum voltage and the maximum current of a thyristor in the prior art during normal operation are the highest in the existing semiconductor devices, and the thyristor can stably and reliably operate in a working circuit, so that the thyristor is widely applied to industrial control occasions with large capacity power. However, the thyristor is triggered by an electrical signal, so that the main circuit and the control circuit are not insulated and interfere with each other. Therefore, it is proposed to replace the electrical signal with an optical signal, which is a photo thyristor (also called a photo thyristor). The light-operated thyristor uses a laser diode or a light-emitting diode as a light source, dv/dt of the light-operated thyristor complements a short-circuit point, and the existence of the short-circuit point can reduce a value of alpha 2, and the well-known conduction condition of the thyristor is that the sum of alpha 1 and alpha 2 approaches to 1 infinitely, so that how to realize the light-directly triggering high-power light-operated thyristor by improving the structural parameters and the manufacturing process of the device under the condition of not reducing the dv/dt capacity and the value of alpha 2 needs further research. Half the light-operated thyristor among the prior art all needs an solitary control electrode structure, and control electrode and negative pole are in same surface, because the negative pole will collect the electric current, so the control electrode of device is annotated and to be taken up a large amount of areas, so the control electrode of device is annotated can be very little, just also explains that the region of the photic of device is very little, so this utility model required laser illumination intensity is very strong. When the junction J2 is designed on the silicon surface of the photothyristor, although light can be directly irradiated on the junction J2, and the thyristor can be conducted faster under the condition of low power required by the light trigger device, the performance of the device can be seriously affected by designing the junction J2 on the surface of the device, and the junction J2 mainly bears the pressure drop of the thyristor under the forward pressure drop, but the junction J2 is designed on the surface of the device, so that the voltage resistance of the device is greatly reduced.
Disclosure of Invention
An object of the utility model is to overcome prior art not enough, provide a simple structure, convenient to use is suitable for the light-operated thyristor of popularization and application.
The utility model discloses a light-operated thyristor, including light-operated thyristor chip, light-operated thyristor chip includes thyristor and light trigger signal's LED device, wherein the cathode structure of thyristor includes that the photogenic carrier semiconductor of non-ohmic contact type is regional and ohmic contact's current collection region. The utility model discloses improve the cathode structure, make the cathode both can regard as the current collection region, and it is regional to have the semiconductor that is not covered by the metal again, adopts the light irradiation that is fit for the wavelength to produce the photogenerated carrier on the silicon surface, acts on the J2 knot of light-operated thyristor makes the whole device forward of thyristor switch on. The utility model discloses a light-operated thyristor structure can shorten device edge at first and the time difference of inside trigger latch for the time that inside and edge triggered the latch keeps unanimous as far as possible, guarantees electric current evenly distributed in the device. Secondly, because of the existence of the ohmic contact current collection area, the dv/dt tolerance of the device cannot be reduced, the sum of the conduction conditions alpha 1 and alpha 2 of the device approaches to 1 infinitely, and the alpha 2 in the device does not decrease, the conduction performance of the device can be ensured fundamentally, and on the other hand, because of the existence of the non-ohmic contact type photon-generated carrier semiconductor area of the cathode structure, the dv/dt capacity of the device can be ensured to meet the requirement. The utility model discloses a light-operated thyristor has high voltage, heavy current, switches on, small advantage fast.
Further, the utility model discloses a light-operated thyristor, the cathode structure of light-operated thyristor chip is the interdigital column structure of symmetry, interdigital column structure can be square frame column structure, including setting up metal electrode and the grating window on frame column structure, metal electrode is one at least, the grating window is one equally at least, metal electrode with the grating window can be arranged in frame column structure at the interval in turn. The interdigital structure can also be an equiaxial symmetrical structure of a circular structure, a triangular equiaxial symmetrical structure or an irregular asymmetrical structure. The electrode at the edge of the frame-shaped structure can be used as a routing part of the cathode metal electrode.
Further, the utility model discloses a light-operated thyristor, ohmic contact's current collection region includes the negative pole short-circuit point, negative pole short-circuit point interval sets up.
Further, the utility model discloses a light-operated thyristor, light-operated thyristor chip is from last down to be negative pole n + district, negative pole p district, substrate n + district in proper order to and positive pole p + district on the negative pole p district with set up negative pole metal level and positive pole metal level respectively under the positive pole p + district, negative pole n + district still is provided with the negative pole short circuit point set up the mesa groove on the light-operated thyristor chip, the concave surface in mesa groove borders on in proper order negative pole p district and substrate n-district on the positive pole p + district, and border on the district the substrate n-district and the region in mesa groove still are provided with to leading to diffusion p + district. The cathode metal part forms a current collection area of ohmic contact, and the semiconductor part exposed at the cathode is a non-ohmic contact type photon-generated carrier area. The utility model discloses a light-operated thyristor links together through the negative pole n + district and the metal connection of the existing short-circuit point of design, also has the negative pole n + district that does not take the short-circuit point and is in the same place with metal lug connection, both exist the short-circuit point and let its conductivity not receive the loss, start from the device structure, the device has the short-circuit point on horizontal, and there is not the short-circuit point on vertical thyristor, under the condition that does not change the basic structure of device like this, the conductivity and dv/dt tolerance of thyristor do not reduce.
Further, the utility model discloses a light-operated thyristor, to leading to diffusion p + district symmetry setting.
A light-operated thyristor trigger control system comprises the light-operated thyristor and an LED device used for generating a light trigger signal, wherein the LED device is triggered by adopting a pulse signal, and when the light-operated thyristor needs to be conducted in the forward direction, one pulse enables the LED device to emit light to directly enable the thyristor to be conducted. The control circuit can be realized by adopting an FPGA.
Compared with the prior art, the utility model discloses following profitable technological effect has:
the utility model discloses a light-operated thyristor, both there is the negative pole short-circuit point, and there is the negative pole n + region that links together also, when improving device dv/dt characteristic, also can not make the alpha 2 value of device reduce, consequently, as alpha 1 and alpha 2 with unlimited approaching 1, and alpha 2 does not have under the condition that reduces for the device is under the wavelength illumination condition that is fit for silicon absorption, and sufficient illumination intensity is accepted to the device, and the device then can switch on. The utility model discloses a light-operated thyristor not only possesses high voltage, heavy current, can switch on fast moreover, in addition, the utility model discloses a light-operated thyristor triggers control system has small advantage.
Drawings
Fig. 1 is a schematic structural diagram of the light-operated thyristor of the present invention.
Fig. 2 is a schematic diagram of an internal structure of the photothyristor.
Fig. 3 is a schematic view of a cross section of the cathode of the photothyristor on the reverse side.
Fig. 4 is a schematic structural diagram of the light-operated thyristor trigger control system of the present invention.
The structure comprises a substrate, a cathode, a substrate, a cathode metal layer, a cathode short-circuit point, a cathode n + region, a mesa groove, a p + region, a substrate n-region, an anode p + region, an anode metal layer and an anode metal layer, wherein the cathode is 1, the cathode p region.
Detailed Description
The present invention will be described in further detail with reference to specific examples.
Embodiment 1, as shown in fig. 1 to 3, the utility model discloses a light-operated thyristor, including the light-operated thyristor chip, the light-operated thyristor chip includes thyristor and light trigger signal's LED device, wherein the cathode structure includes the photocarrier semiconductor region of non-ohmic contact type and ohmic contact's current collection region, and the short circuit region encircles around non-short circuit region, so design can reduce and consume the area of design control pole at the cathodic surface, and the negative pole has both undertaken the current collection effect, has also undertaken the conduction effect of control pole to the device. The utility model discloses improve the cathode structure, make the cathode both can regard as the current collection region, and it is regional to have the semiconductor that is not covered by the metal again, adopts the light struck that is fit for the wavelength to produce the photogenerated carrier on the silicon surface that is not covered by the metal, acts on the J2 knot of light-operated thyristor is gone up, makes the whole device forward of thyristor switch on. The utility model discloses a light-operated thyristor structure can shorten device edge at first and the time difference of inside trigger latch for the time that inside and edge triggered the latch keeps unanimous as far as possible, guarantees electric current evenly distributed in the device. Secondly, because of the existence of the ohmic contact current collection area, the dv/dt tolerance of the device cannot be reduced, the conduction condition alpha 1 and the sum of the device approach to 1 infinitely, and alpha 2 in the device does not decrease, the conduction performance of the device can be ensured fundamentally, and on the other hand, because of the existence of a short-circuit point in the device structure, the dv/dt capacity of the device can meet the requirement.
In this embodiment, as a typical but non-limiting example, the cathode structure of the light-operated thyristor chip of the present invention is a symmetric square frame-shaped structure, and includes at least one metal electrode and at least one grating window disposed on the frame-shaped structure, where the at least one metal electrode and the at least one grating window may be alternately arranged in the frame-shaped structure at intervals. The electrode at the edge of the frame-shaped structure can be used as a routing part of the cathode metal electrode.
The light-operated thyristor chip is sequentially provided with a cathode n + region 4, a cathode p region 1, a substrate n-region 7 and an anode p + region 8 from top to bottom, a cathode metal layer 2 and an anode metal layer 9 are respectively arranged above the cathode p region 1 and below the anode p + region 8, the cathode n + region 4 is further provided with a cathode short-circuit point 3, the light-operated thyristor chip is provided with a mesa groove 5, the groove surface of the mesa groove 5 is sequentially adjacent to the cathode p region 1 and the substrate n-region 7, an opposite-connection diffusion p + region 6 is further arranged above the anode p + region 8 and adjacent to the substrate n-region 7 and the mesa groove 5, and the opposite-connection diffusion p + region is arranged at the edge of the light-operated thyristor chip and is of a symmetrical structure. The cross section of the p + diffusion region 6 along the height direction of the photothyristor chip is in a gourd shape, so that the voltage resistance of the device is improved. Mesa groove 5 of device is used for improving withstand voltage, and the shape is the ellipse, and the diameter is about 87 um. The utility model discloses a light-operated thyristor is through the existing negative pole n + district that takes the short-circuit point of design, also has the negative pole n + district that does not take the short-circuit point, starts from the device structure, and the device has the short-circuit point on horizontal, and does not have the short-circuit point on vertical thyristor, like this under the condition that does not change the basic structure of device, not only do not have the short-circuit point but also let its conducting capability not receive the loss, also there is the dv/dt tolerance that the short-circuit point made the thyristor all not reduce. The utility model discloses a light-operated thyristor has high voltage, heavy current, switches on fast, and its small advantage of auxiliary system with the help of.
Claims (5)
1. A light-operated thyristor, characterized by: the LED device comprises a light-operated thyristor chip, wherein the light-operated thyristor chip comprises a thyristor and an LED device of a light trigger signal, and the cathode structure of the thyristor comprises a non-ohmic contact type photon-generated carrier semiconductor region and an ohmic contact type current collection region.
2. The light control thyristor of claim 1, wherein the cathode structure of the light control thyristor chip is a symmetrical interdigitated structure.
3. The light controlled thyristor of claim 1, wherein the current collection area of the ohmic contact comprises a shorting point.
4. The photothyristor of claim 1, wherein the photothyristor chip comprises, in order from top to bottom, a cathode n + region, a cathode p region, a substrate n-region, and an anode p + region, a cathode metal layer and an anode metal layer are disposed above the cathode p region and below the anode p + region, respectively, the cathode n + region is further provided with a cathode short point, the photothyristor chip is provided with a mesa groove, a groove surface of the mesa groove is adjacent to the cathode p region and the substrate n-region, and an opposite-to-opposite diffusion p + region is disposed above the anode p + region and adjacent to the substrate n-region and the mesa groove.
5. The light controlled thyristor of claim 4, wherein the p + regions of the pair-pass diffusions are symmetrically disposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921074953.7U CN209981221U (en) | 2019-07-10 | 2019-07-10 | Light-operated thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921074953.7U CN209981221U (en) | 2019-07-10 | 2019-07-10 | Light-operated thyristor |
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| Publication Number | Publication Date |
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| CN209981221U true CN209981221U (en) | 2020-01-21 |
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| CN201921074953.7U Expired - Fee Related CN209981221U (en) | 2019-07-10 | 2019-07-10 | Light-operated thyristor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110233175A (en) * | 2019-07-10 | 2019-09-13 | 兰州大学 | A kind of photo thyristor and its Triggering Control System |
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2019
- 2019-07-10 CN CN201921074953.7U patent/CN209981221U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110233175A (en) * | 2019-07-10 | 2019-09-13 | 兰州大学 | A kind of photo thyristor and its Triggering Control System |
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Granted publication date: 20200121 |