CN109979998B - Integrated gate commutated thyristor device with high current surge tolerance - Google Patents
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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Abstract
The invention provides an integrated gate commutated thyristor device with high current impact (dI/dt) tolerance capability, which comprises a gate commutated thyristor chip unit and a gate driving unit, wherein the integrated gate commutated thyristor device is also provided with one or more of the following components: the trigger current is raised to a gate driving unit of 10A, the internal carrier life is more than 100us, the gate current is approximately equal to the cathode surface structure of a gate contact ring in each area of the chip, and the transverse size is shortened to be within 200 um. The integrated gate commutated thyristor device can be fully conducted without damage under the condition of high current impact, effectively reduces anode reactance used for limiting current rising rate in system application, reduces the volume of an external module, and improves convenience in application.
Description
Technical Field
The invention belongs to the technical field of semiconductor integrated circuits, and particularly relates to an Integrated Gate Commutated Thyristor (IGCT) device with high current impact resistance.
Background
In bipolar devices represented by thyristors, gate turn-off thyristors (GTOs), IGCTs, a certain time delay is required after a gate trigger signal is given to achieve sufficient conduction, since carriers need to generate conductive plasma in the semiconductor body by lateral diffusion during turn-on. However, in a circuit, after the voltage between the cathode and the anode of the power electronic device is reduced, the current level is mainly affected by the topology and parameters of the outer loop, and when the resistance and inductance in the loop are small, the current often rises at a speed as high as kA/us. In this process, if the carriers in the device are not sufficiently diffused and conducted, the current density in the local area is easily excessive, and the device is likely to fail due to local overheating or the like.
In system applications, device failure caused by too fast current rise is avoided, typically by series connection of a reactor at the anode of the IGCT device to limit the rate of current rise. Although the introduction of the anode reactance can effectively limit the short-circuit current and short-circuit energy after the failure of the device besides avoiding the failure of the opening process, the excessively low current surge (i.e. the differential operation dI/dt of the current intensity I in the device to the time t, wherein I represents the current intensity in the device and t represents the time) tolerance capability causes the excessively large volume of the anode reactance in the IGCT series connection, and the problems of the volume of equipment, the mechanical structure, the heat dissipation design and the like in the application are brought.
Fig. 1 shows a typical structure of a Gate Commutated Thyristor (GCT) chip unit, in the process of triggering and conducting the gate commutated thyristor, current is injected from the gate to the cathode, electrons are emitted from the cathode emitter and spread to the lower region of the anode and the gate, a local electric field caused after passing through the J2 depletion region can cause hole emission on the anode, and the trigger device enters a conductivity modulation state, so that the effective resistivity inside the gate commutated thyristor is reduced, thereby increasing the current intensity inside the gate commutated thyristor, and the gate commutated thyristor is subject to current impact, so that the above-mentioned device failure condition is easy to occur.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides an IGCT device with high dI/dt (differential calculation is carried out on current in time, and current impact quantity is reflected) tolerance, which can be fully conducted without damage under the condition of high dI/dt, can effectively reduce anode reactance used for limiting current rising rate in system application, reduce the volume of an external module and improve the application convenience of the IGCT device.
In order to achieve the above object, the present invention provides the following technical solutions:
an integrated gate commutated thyristor device with high current impact tolerance comprises a gate commutated thyristor chip unit and a gate driving unit,
the gate commutated thyristor chip unit has three electrodes: an anode, a cathode, and a gate;
the gate driving unit includes: the device comprises a logic control module, an internal power supply module, an on driving module, an off driving module, a rectifying and filtering module, a signal indicator lamp, an optical-electrical conversion module and an electrical-optical conversion module;
the external power supply, the rectifying and filtering module and the internal power supply module are sequentially connected; the internal power supply module is respectively connected with the logic control module, the on driving module, the off driving module, the light-electricity conversion module and the electricity-light conversion module; the logic control module is respectively connected with the on-driving module, the off-driving module, the signal indicator lamp and the electric-optical conversion module; the on driving module and the off driving module are respectively connected to the cathode and the gate; the external input optical fiber, the photoelectric conversion module and the logic control module are sequentially connected; the electric-optical conversion module is connected with the feedback optical fiber outwards; the cathode, the gate electrode, the on driving module and the off driving module are both connected to the logic control module in a feedback manner;
the gate region of the device is provided with cathode strips which are arranged in parallel, a gate commutated thyristor chip unit is correspondingly arranged under each cathode strip, each cathode strip is isolated from the gate region by an isolation region outside the edge of the cathode strip,
the integrated gate commutated thyristor device has one or more of the following:
the trigger current is raised to a gate driving unit of 10A, the internal carrier life is more than 100us, the gate current is approximately equal to the cathode surface structure of a gate contact ring in each area of the chip, and the transverse size is shortened to be within 200 um.
Further, the gate driving unit for increasing the trigger current to 10A actively detects the anode current, so as to increase the trigger current when the anode current is smaller after the trigger is turned on.
Further, an anode current measuring sensor is further arranged in the gate driving unit, and the anode current measuring sensor is respectively connected with the anode and the logic control module.
Further, the gate commutated thyristor chip unit is provided with a temperature sensor, which is connected to the logic control module.
Furthermore, the control logic of the logic control module improves the charging time of the trigger follow current inductor of the gate electrode and improves the peak current of the trigger follow current inductor, so that the trigger current is improved.
Further, the cathode surface structure of the gate electrode contact ring with approximately equal cathode current density in each area of the chip is a double-gate electrode structure, the double-gate electrode structure comprises a cathode circle center and a plurality of concentric cathode rings outside the cathode circle center, two concentric gate electrode contact rings, one or more radial gate electrode contact strips and a plurality of cathode comb strips, and the plurality of cathode comb strips are radially arranged in a partial area of each cathode ring to form a sector area, wherein the first gate electrode contact ring is positioned between the cathode rings on the inner side, and the other gate electrode contact ring is positioned between the cathode rings on the outer side or is positioned on the outermost ring; the two gate contact rings are connected by radial gate contact strips, and gate electrodes are arranged at the center and the outer side of each cathode comb strip at the same time so as to be in contact with the metal structure in the package.
Further, the cathode surface structure of the gate electrode contact ring with approximately equal cathode current density in each area of the chip is a double-gate electrode structure, the double-gate electrode structure comprises a cathode circle center and a plurality of concentric cathode rings outside the cathode circle center, two concentric gate electrode contact rings, one or more radial gate electrode contact strips and a plurality of cathode comb strips, and the plurality of cathode comb strips are radially arranged in a partial area of each cathode ring to form a sector area, wherein the first gate electrode contact ring is positioned between the cathode rings on the inner side, and the other gate electrode contact ring is positioned between the cathode rings on the outer side or is positioned on the outermost ring; the two gate electrode contact rings are connected through radial gate electrode contact strips, the upper side width of the gate electrode contact rings is 0.5-3 mm, and the lower side width is 2-5.5 mm.
Further, in the single gate electrode commutated thyristor unit with the transverse dimension shortened to be within 200um, the width of the cathode comb strip is 2-100 um, the spacing between the gate electrode commutated thyristor chip units is 4-400 um, and the width of the gate electrode between the two cathode comb strips is 2-300 um. The IGCT device provided by the invention has high dI/dt tolerance, and can be fully conducted without damage under the condition of high dI/dt, so that the anode reactance for limiting the current rising rate in system application is effectively reduced, the volume of an external module is reduced, and the application convenience is improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and are intended to provide further explanation of the technology claimed.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following more particular description of embodiments of the present invention, as illustrated in the accompanying drawings. The accompanying drawings are included to provide a further understanding of embodiments of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, and not constitute a limitation to the invention. The drawings are not to be regarded as being drawn to scale unless specifically indicated. In the drawings, like reference numerals generally refer to like components or steps. In the drawings:
FIG. 1 is a schematic diagram illustrating a conventional GCT cell of the prior art;
FIG. 2 is a schematic diagram illustrating a conventional IGCT unit of the prior art;
FIG. 3 is an IGCT device showing the present invention incorporating an anode current measurement sensor in the gate drive;
FIG. 4 is an IGCT device incorporating a temperature sensor of the present invention;
FIG. 5 is a double gate structure showing an IGCT unit in an IGCT device of the present invention;
FIG. 6 is a schematic cross-sectional view of a gate contact ring illustrating a dual gate structure in an IGCT device of the present invention;
fig. 7 is a partial top view showing the IGCT device of the present invention incorporating adjacent GCT chip units.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, exemplary embodiments according to the present invention will be described in detail with reference to the accompanying drawings. It should be apparent that the described embodiments are only some embodiments of the present invention and not all embodiments of the present invention, and it should be understood that the present invention is not limited by the example embodiments described herein. All other embodiments, which can be made by a person skilled in the art without the exercise of inventive faculty, based on the embodiments described herein, shall fall within the scope of protection of the invention. In the present specification and the drawings, substantially the same elements and functions will be denoted by the same reference numerals, and repetitive description of these elements and functions will be omitted. In addition, descriptions of functions and constructions well known in the art may be omitted for clarity and conciseness.
First, the structure of a conventional IGCT device is described, as shown in fig. 2, which includes a GCT chip unit and a gate driving unit, wherein,
the GCT chip unit has three electrodes: 1 anode, 2 cathode and 3 gate, the internal structure of GCT chip unit is as shown in FIG. 1, and from cathode to anode is equipped with in proper order: n is n + Emitter or cathode emitter, p-base region, n + Buffer layer, p + An emitter or an anode emitter, wherein a gate electrode is arranged on the surface of the p base region;
the gate driving unit includes: the device comprises a logic control module 4, an internal power supply module 5, a switching-on driving module 6, a switching-off driving module 7, a rectifying and filtering module 8, a signal indicator lamp 9, a photoelectric conversion module 10 and an electric-to-optical conversion module 11.
The external power supply, the 8 rectifying and filtering module and the 5 internal power supply module are sequentially connected to provide power for the IGCT device; the internal power supply module is used as a power supply and is respectively connected with the logic control module 4, the on driving module 6, the off driving module 7, the photoelectric conversion module 10 and the electric-optical conversion module 11; the logic control module 4 controls the 6 on driving module, the 7 off driving module, the 9 signal indicating lamp and the 11 electric-optical conversion module which are respectively connected with the logic control module, wherein the 6 on driving module and the 7 off driving module are respectively connected to the 2 cathode and the 3 gate of the GCT chip unit, so that the 4 logic control module can control the on and off of the GCT chip unit; the external input optical fiber, the 10 optical-electrical conversion module and the 4 logic control module are sequentially connected, and an optical control signal in the external input optical fiber is sent to the 4 logic control module; the 11 electric-optical conversion module is externally connected with a feedback optical fiber to output a feedback signal of the 4 logic control module; the 2 cathode, the 3 gate, the 6 on driving module and the 7 off driving module are all connected to the 4 logic control module in a feedback manner so as to provide feedback signals.
Compared with the traditional IGCT device, the IGCT device with high dI/dt tolerance provided by the invention has one or more of the following structures:
1. the gate driving unit is capable of actively detecting anode current, and increasing trigger current when the anode current is smaller after trigger conduction so as to enhance electron emission of the cathode emitter. The main reason for damaging the components is that the excessively fast current rising rate is matched with the incompletely uniform manufacturing process and the spurious parameters, so that the chip is only locally conducted, the whole device is invalid due to the excessively large current, the trigger current integrally injected into the device on the same time node becomes large after the trigger current of the gate driving unit is enhanced, and the carriers become more, thereby being beneficial to the uniform conduction of the GCT device.
In the gate driving unit, the function of actively detecting the anode current by the gate driving unit is realized by adding an anode current measuring sensor such as a Hall sensor and other current sensors in the gate driving unit or by measuring the voltage between a gate and a cathode and correcting by matching with a temperature sensor to obtain the anode current:
as shown in fig. 3, an anode current measurement sensor is connected with the anode of the GCT chip unit to measure the anode current of the GCT chip unit, and the anode current measurement sensor is further connected to a 4 logic control module, so that the IGCT device actively detects the anode current through the anode current measurement sensor such as a 12 hall sensor and sends the detection result to the 4 logic control module, and the 4 logic control module promotes the trigger current when the anode current is smaller after triggering and conducting through a 6-on driving module so as to enhance the gate driving of electron emission of the cathode emitter;
as shown in fig. 4, a 13 temperature sensor on the GCT chip unit is connected to a 4 logic control module, to provide the temperature of the GCT chip unit for the 4 logic control module, the 4 logic control module measures the voltage between the 2 cathode and the 3 gate through the feedback signal of the 2 cathode and the 3 gate and corrects the voltage with the 13 temperature sensor to obtain anode current, and the 4 logic control module promotes the trigger current when the anode current is smaller after triggering and conducting through a 6-on driving module according to the value of the anode current so as to enhance the electron emission of the cathode emitter;
the 4 logic control module improves the charging time of the trigger freewheeling inductor of the 3 gate electrode by modifying the control logic in the logic control module, and improves the peak current of the trigger freewheeling inductor, so that the trigger current is improved, and the peak current value can be typically improved from 2A to 10A.
2. Internal carrier lifetime enhancement to>100us GCT chip unit. After the service life of the carrier is prolonged in the GCT chip unit, the compound effect of the device is weakened on the same time node, the concentration of the carrier in the body is increased, the uniform conduction of the GCT device is facilitated, the damage probability of the GCT device is reduced, and the dI/dt tolerance of the GCT device is improved. The GCT chip unit is prepared by the technological means including but not limited to reducing electron irradiation dose, reducing p base region doping and the like, so that the service life of internal carriers of the chip is prolonged, the control of the service life of the internal carriers is related to specific application scenes, and the service life of the internal carriers can be prolonged from 5-10us to 10us typically>100us, wherein the process means for manufacturing the GCT chip unit comprises reducing the radiation dose to a level that is not performed, wherein the peak doping of the p-base region is typically 1e17/cm -3 Can be reduced to 3e16-5e16/cm -3 Magnitude or avoiding heavy metal contamination in the process flow.
3. In the on state, the cathode current density is approximately equal in each region of the chip (e.g., the cathode current density is equal to or greater than 90% in each region of the chip). The cathode surface structure of the gate contact ring, such as a double-gate structure, is optimized, so that the triggering non-uniformity caused by different stray parameters of gate metal electrodes everywhere is reduced, the uniformity of trigger current distribution is ensured, the uniform distribution of cathode current is further realized, the uniform opening of the IGCT device is facilitated, the damage probability of the GCT device is reduced, and the dI/dt tolerance of the GCT device is improved. As shown in fig. 5, the cathode surface structure of the gate contact ring of the present invention is preferably a double-gate structure, which comprises a cathode center 14 and a plurality of concentric cathode rings 15-22 outside the cathode center, two concentric gate contact rings 23, one or more radial gate contact strips 25 and a plurality of cathode strips 24, wherein the plurality of cathode strips 24 are radially arranged in a partial region of each cathode ring to form a sector region, and the optimization is that gate electrodes are simultaneously arranged at the center and the outer side of each cathode strip 24 to contact with the metal structure in the package; the size of the gate contact ring can be improved on the basis of the double-gate design, as shown in fig. 6, in the conventional structure, the upper side width is 0.5 mm-2 mm, and in the improved structure of the invention, the upper side width is 0.5 mm-3 mm, and the lower side width is 2 mm-5.5 mm.
4. Individual GCT chip units of reduced lateral dimensions. The single GCT chip unit with the transverse size is reduced, so that the perimeter ratio of the gate region of the GCT device relative to the boundary of the cathode region is increased, and further, the trigger current is more quickly and uniformly injected into each cathode unit, so that the trigger opening is more uniformly performed, the damage probability of the GCT device is reduced, and the dI/dt tolerance of the GCT device is improved. As shown in fig. 7, which is a partial top view of an IGCT device of the present invention including adjacent GCT chip units, the gate region and three cathode strips therein are shown, and the gate region and the three cathode strips are separated by an isolation region, it can be seen that by reducing the spacing between the cathode strips and the maximum width of the gate metal between the cathode strips, the lateral dimension of the individual GCT chip units is reduced, and the diffusion time is reduced on the premise of maintaining the equivalent diffusion distance, and the turn-on speed is increased. In the existing GCT device structure, the width of the comb strip is 180-300 um, the spacing between GCT chip units is 250-450 um, the width of the gate electrode is 180-300 um, typically the transverse length of each unit is about 280um, after improvement, the width of the comb strip is 2-100 um, the spacing between units is 4-400 um, and the width of the gate electrode is 2-300 um, so that the transverse length of each GCT chip unit is shortened to be within 200 um.
By adopting the structure, the tolerance of the IGCT device can reach 20kA/us.
From the above, the IGCT device provided by the invention has high dI/dt tolerance, and can be fully conducted without damage under the condition of high dI/dt, so that the anode reactance for limiting the current rising rate in the system application is effectively reduced, the volume of an external module is reduced, and the application convenience is improved.
In particular, the specific components may be selectively arranged by those skilled in the art according to the principles of the present invention, as long as the principles of the control method of the present invention can be implemented.
It is noted that the terminology used in the description is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of other like elements in a process, method, article or apparatus that comprises the element.
Those skilled in the art will appreciate that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art may make modifications to the technical solutions described in the foregoing embodiments or may make equivalent substitutions for some or all of the technical features thereof; such modifications and substitutions do not depart from the spirit of the invention, which is set forth in the following claims.
Claims (3)
1. An integrated gate commutated thyristor device with high current impact tolerance capability comprises a gate commutated thyristor chip unit and a gate driving unit, and is characterized in that,
the gate commutated thyristor chip unit has three electrodes: an anode, a cathode, and a gate;
the gate driving unit includes: the device comprises a logic control module, an internal power supply module, an on driving module, an off driving module, a rectifying and filtering module, a signal indicator lamp, an optical-electrical conversion module and an electrical-optical conversion module;
the external power supply, the rectifying and filtering module and the internal power supply module are sequentially connected; the internal power supply module is respectively connected with the logic control module, the on driving module, the off driving module, the light-electricity conversion module and the electricity-light conversion module; the logic control module is respectively connected with the on-driving module, the off-driving module, the signal indicator lamp and the electric-optical conversion module; the on driving module and the off driving module are respectively connected to the cathode and the gate; the external input optical fiber, the photoelectric conversion module and the logic control module are sequentially connected; the electric-optical conversion module is connected with the feedback optical fiber outwards; the cathode, the gate electrode, the on driving module and the off driving module are both connected to the logic control module in a feedback manner;
the gate region of the device is provided with cathode strips which are arranged in parallel, a gate commutated thyristor chip unit is correspondingly arranged under each cathode strip, each cathode strip is isolated from the gate region by an isolation region outside the edge of the cathode strip,
the integrated gate commutated thyristor device has one or more of the following:
the trigger current is raised to a gate driving unit of 10A, the internal carrier life is greater than 100us, the gate current density is approximately equal to that of a gate contact ring cathode surface structure in each area of the chip, and the transverse size is shortened to be within 200 um;
the cathode current density is approximately equal in each area of the chip, the cathode surface structure of the gate electrode contact ring is a double-gate electrode structure, the double-gate electrode structure comprises a cathode circle center and a plurality of concentric cathode rings outside the cathode circle center, two concentric gate electrode contact rings, one or more radial gate electrode contact strips and a plurality of cathode comb strips, the plurality of cathode comb strips are radially arranged in a partial area of each cathode ring to form a sector area, wherein the first gate electrode contact ring is positioned between the cathode rings on the inner side, and the other gate electrode contact ring is positioned between the cathode rings on the outer side or the outermost ring; the two gate electrode contact rings are connected through radial gate electrode contact strips, and gate electrode is arranged at the center and the outer side of each cathode comb strip simultaneously so as to be in contact with the metal structure in the package;
in a single gate electrode current-converting thyristor unit with the transverse dimension shortened to be within 200um, the width of a cathode comb strip is 2-100 um, the spacing between gate electrode current-converting thyristor chip units is 4-400 um, and the width of a gate electrode between two cathode comb strips is 2-300 um;
the gate driving unit is also provided with a Hall equal current sensor, the Hall equal current sensor is respectively connected with the anode and the logic control module, and anode current is actively detected by an anode current measuring sensor of the Hall equal current sensor; or the gate pole commutation thyristor chip unit is provided with a temperature sensor, the temperature sensor is connected to the logic control module to provide the temperature of the GCT chip unit for the logic control module, and the logic control module measures the voltage between the cathode and the gate pole through the feedback signals of the cathode and the gate pole and obtains the anode current by matching with the temperature sensor.
2. The integrated gate commutated thyristor device of claim 1, wherein the control logic of the logic control module increases the charging time of the trigger freewheeling inductor of the gate, increasing its peak current, and thereby increasing the trigger current.
3. The integrated gate commutated thyristor device of claim 1, wherein the gate contact ring has an upper width of 0.5mm to 3mm and a lower width of 2mm to 5.5mm.
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| CN209561414U (en) * | 2018-12-27 | 2019-10-29 | 清华大学 | The integrated gate commutated thyristor device for having high current impact tolerance |
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