CN209561414U - Integrated Gate-Commutated Thyristor Devices with High Current Surge Capability - Google Patents

Abstract

The utility model provides the integrated gate commutated thyristor device that one kind has high current impact (dI/dt) tolerance, including door pole stream-exchanging thyristor chip unit and gate-drive unit, the integrated gate commutated thyristor device also has one or more of: trigger current is promoted to the gate-drive unit of 10A, the door pole stream-exchanging thyristor chip of inside carrier lifetime > 100us, cathode-current density and foreshortens to the single door pole stream-exchanging thyristor unit within 200um in the approximately equal gate pole contact ring cathode plane structure in each region of chip, lateral dimension.The integrated gate commutated thyristor device of the utility model can be sufficiently conductive without damaging under the situation that high current is impacted, it is effectively reduced in system application for limiting the anode reactance of current rise rate, reduce external module volume, improves convenience in the application.

Description

Integrated Gate-Commutated Thyristor Devices with High Current Surge Capability

technical field

The utility model belongs to the technical field of semiconductor integrated circuits, in particular to an integrated gate commutation thyristor (IGCT) device with high current impact tolerance.

Background technique

For bipolar devices represented by thyristors, gate turn-off thyristors (GTOs), and IGCTs, during the turn-on process, since carriers need to diffuse laterally to generate conductive plasma in the semiconductor body, the given gate A certain time delay is required after the trigger signal to achieve sufficient turn-on. However, in the circuit, after the voltage between the cathode and anode of the power electronic device drops, the current level is mainly affected by the topology and parameters of the outer loop. When the resistance and inductance in the loop are small, the current often rises at a speed of up to kA/us. In this process, if the carriers in the device are not fully diffused and turned on, it is easy to cause the current density in the local area to be too large, which will lead to device failure caused by local overheating.

Therefore, in system applications, a reactor is usually connected in series with the anode of the IGCT device to limit the rate of current rise and avoid device failure caused by excessive current rise. Although the introduction of anode reactance can not only avoid the failure of the opening process, but also effectively limit the short-circuit current and short-circuit energy after the device fails, but the current impact (current impact is the differential operation dI/dt of the current intensity I in the device to the time t , where, I represents the current intensity in the device, t represents the time) tolerance leads to the excessive volume of the IGCT series anode reactance, which brings great difficulties to the equipment volume, mechanical structure and heat dissipation design in the application.

Figure 1 shows a typical structure of a gate-commutated thyristor (GCT) chip unit. During the triggering and conduction process of the gate-commutated thyristor, the gate drive injects current from the gate to the cathode, and electrons are emitted from the cathode. The electrode emits and diffuses to the anode side and the lower area of the gate. The local electric field caused by crossing the J2 depletion region will cause the hole emission on the anode side, triggering the device to enter the conductance modulation state, so that the effective inside of the gate commutation thyristor Resistivity decreases, which leads to an increase in the current intensity in the gate commutation thyristor, and the gate commutation thyristor is impacted by the current, and the above-mentioned device failure is prone to occur.

Utility model content

The purpose of the utility model is to overcome the defects in the above-mentioned prior art, and propose a IGCT device with high dI/dt (differential calculation of current in time, which reflects the current impact amount) tolerance capability, the device It can be fully turned on without damage under high dI/dt conditions, can effectively reduce the anode reactance used to limit the current rise rate in system applications, reduce the volume of external modules, and improve the convenience of IGCT device applications.

In order to realize the above utility model purpose, the utility model provides the following technical solutions:

An integrated gate commutation thyristor device with high current impact tolerance, including a gate commutation thyristor chip unit and a gate drive unit,

The gate commutated thyristor chip unit has three electrodes: an anode, a cathode and a gate;

The gate drive unit includes: a logic control module, an internal power supply module, a turn-on drive module, a turn-off drive module, a rectification filter module, a signal indicator light, an optical-to-electrical conversion module, and an electrical-to-optical conversion module;

The external power supply, the rectification and filtering module, and the internal power supply module are connected in sequence; the internal power supply module is respectively connected to the logic control module, the opening drive module, the closing drive module, the optical-electrical conversion module, and the electrical-optical conversion module ; The logic control module is respectively connected to the opening drive module, the closing drive module, the signal indicator light and the electric-optical conversion module; the opening drive module and the closing drive module are respectively connected to the cathode and the gate; the external input optical fiber, The optical-electrical conversion module and the logic control module are connected in sequence; the electrical-optical conversion module is externally connected to the feedback optical fiber; the cathode, the gate, the opening drive module and the shut-off The drive modules are all fed back and connected to the logic control module;

The gate area of the device is provided with cathode combs arranged in parallel, and a gate commutation thyristor chip unit is correspondingly arranged under each cathode comb, and each cathode comb is connected to the gate through the isolation area outside its edge. Polar regions are isolated from each other,

The integrated gate commutated thyristor device has one or more of the following:

A gate drive unit with a trigger current increased to 10A, a gate commutation thyristor chip with an internal carrier lifetime >100us, a gate contact ring cathode surface structure where the cathode current density is approximately equal in each area of the chip, and a lateral dimension shortened to less than 200um single gate commutated thyristor unit.

Further, the gate drive unit whose trigger current is increased to 10A actively detects the anode current, so as to increase the trigger current when the anode current is small after the trigger is turned on.

Further, an anode current measurement sensor is also provided in the gate drive unit, and the anode current measurement sensor is connected to the anode and the logic control module respectively.

Further, the gate commutation thyristor chip unit is provided with a temperature sensor, and the temperature sensor is connected to the logic control module.

Further, the control logic of the logic control module increases the charging time of the trigger freewheeling inductance of the gate, increases its peak current, and thus increases the trigger current.

Further, the structure of the cathode surface of the gate contact ring whose cathode current density is approximately equal in each area of the chip is a double-gate structure, and the double-gate structure includes a plurality of concentric cathode rings outside the center of the cathode circle, two Concentric gate contact rings, one or more radial gate contact strips and multiple cathode comb strips, multiple cathode comb strips are radially arranged in a partial area of each cathode ring to form a fan-shaped area, wherein the first One gate contact ring is located between the inner cathode rings, and the other gate contact ring is located between the outer cathode rings or the outermost ring; the two gate contact rings are connected by radial gate contact strips. A gate electrode is arranged at the center and outside of each cathode bar to be in contact with the metal structure in the package.

Further, the structure of the cathode surface of the gate contact ring whose cathode current density is approximately equal in each area of the chip is a double-gate structure, and the double-gate structure includes a plurality of concentric cathode rings outside the center of the cathode circle, two Concentric gate contact rings, one or more radial gate contact strips and multiple cathode comb strips, multiple cathode comb strips are radially arranged in a partial area of each cathode ring to form a fan-shaped area, wherein the first One gate contact ring is located between the inner cathode rings, and the other gate contact ring is located between the outer cathode rings or the outermost ring; the two gate contact rings are connected by radial gate contact strips, and the gate The pole contact ring has an upper width of 0.5 mm to 3 mm and a lower width of 2 mm to 5.5 mm.

Further, in a single gate-commutated thyristor unit whose lateral dimension is shortened to less than 200um, the width of the cathode comb is 2-100um, the distance between the gate-commutated thyristor chip units is 4-400um, and the gate between two cathode combs Pole width 2 ~ 300um. The IGCT device of the utility model has a high dI/dt tolerance, and the device can be fully turned on without damage under high dI/dt conditions, effectively reducing the anode reactance used to limit the current rising rate in system applications, reducing the The volume of the external module is reduced, and the convenience of application is improved.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and are intended to provide further explanation of the claimed technology.

Description of drawings

The above and other objects, features and advantages of the present invention will become more apparent through a more detailed description of the embodiments of the present invention in conjunction with the accompanying drawings. The accompanying drawings are used to provide a further understanding of the embodiments of the utility model, and constitute a part of the specification, and are used together with the embodiments of the utility model to explain the utility model, and do not constitute a limitation to the utility model. The drawings should not be considered to be drawn to scale unless expressly indicated. In the drawings, the same reference numerals generally represent the same components or steps. In the attached picture:

Fig. 1 is a schematic diagram showing a conventional GCT unit in the prior art;

Fig. 2 is a schematic diagram showing a traditional IGCT unit in the prior art;

Fig. 3 shows the IGCT device of the utility model in which the anode current measuring sensor is installed in the gate drive;

Fig. 4 shows the IGCT device of installing temperature sensor of the present utility model;

Fig. 5 shows the dual gate structure of the IGCT unit in the IGCT device of the present invention;

Fig. 6 is a cross-sectional schematic view showing a gate contact ring of a dual gate structure in an IGCT device of the present invention;

Fig. 7 is a partial top view showing adjacent GCT chip units in the IGCT device of the present invention.

Detailed ways

In order to make the purpose, technical solution and advantages of the present invention more obvious, exemplary embodiments according to the present invention will be described in detail below with reference to the accompanying drawings. Apparently, the described embodiments are only a part of the embodiments of the present utility model, rather than all embodiments of the present utility model. It should be understood that the present utility model is not limited by the example embodiments described here. Based on the embodiments described herein, all other embodiments obtained by those skilled in the art without creative effort shall fall within the protection scope of the present utility model. In this specification and the drawings, substantially the same elements and functions will be denoted by the same reference numerals, and repeated descriptions of these elements and functions will be omitted. Also, descriptions of functions and constructions that are well known in the art may be omitted for clarity and conciseness.

First, the structure of the traditional IGCT device is briefly introduced. As shown in Figure 2, the traditional IGCT device includes a GCT chip unit and a gate drive unit. Among them,

The GCT chip unit has three electrodes: 1 anode, 2 cathodes and 3 gates. The internal structure of the GCT chip unit is shown in Figure 1. From the cathode to the anode, there are: n ⁺ emitter or cathode emitter, p base, n base area, n ⁺ buffer layer, p ⁺ emitter or anode emitter, and a gate is provided on the surface of p base area;

The gate drive unit includes: 4 logic control modules, 5 internal power supply modules, 6 turn-on drive modules, 7 turn-off drive modules, 8 rectifier filter modules, 9 signal indicator lights, 10 optical-electrical conversion modules and 11 electrical-optical conversion modules .

The external power supply, 8 rectification and filtering modules, and 5 internal power supply modules are connected in sequence to provide power for the IGCT device; the 5 internal power supply modules are used as power supplies with 4 logic control modules, 6 open drive modules, 7 close drive modules, and 10 optical-electrical The conversion module is connected with 11 electro-optical conversion modules; 4 logic control modules control the 6 turn-on drive modules, 7 turn-off drive modules, 9 signal indicator lights and 11 electro-optic conversion modules respectively connected to them, among which 6 turn-on drive modules and 7 turn-off drive modules are respectively connected to the 2 cathodes and 3 gates of the GCT chip unit, so as to realize the control of the turn-on and turn-off of the GCT chip unit by the 4 logic control module; the external input optical fiber, 10 photoelectric conversion modules , 4 logic control modules are connected in sequence, and the optical control signal in the external input optical fiber is sent to the 4 logic control module; 11 the electric-optical conversion module is externally connected to the feedback optical fiber to output the feedback signal of the 4 logic control module; 2 cathode , 3 gates, 6 turn-on drive modules and 7 turn-off drive modules are feedback connected to 4 logic control modules to provide feedback signals.

Compared with the above-mentioned traditional IGCT device, the IGCT device with high dI/dt tolerance of the utility model has the following one or more structures:

1. It has a gate drive unit that can actively detect the anode current, and increase the trigger current when the anode current is small after the trigger is turned on, so as to enhance the electron emission of the cathode emitter. The main reason for the damage of components due to dI/dt is that the excessively fast current rise rate combined with the incompletely uniform manufacturing process and stray parameters will make the chip only partially conduction, and the excessive current will cause the overall failure of the device. After the trigger current of the gate drive unit, the trigger current injected into the device as a whole becomes larger at the same time node, and the number of carriers increases, which is conducive to the uniform conduction of the GCT device.

In the gate drive unit of the present utility model, the function of the gate drive unit to actively detect the anode current is to install an anode current measurement sensor such as a current sensor such as a Hall sensor in the gate drive unit or by measuring the gate and The voltage between the cathodes and the temperature sensor are corrected to obtain the anode current to achieve:

As shown in Figure 3, the anode current measurement sensor is connected to the anode of the GCT chip unit to measure the anode current of the GCT chip unit, and the anode current measurement sensor is also connected to the 4 logic control module, so that the IGCT device passes the anode current of the 12 Hall sensor The measurement sensor actively detects the anode current, and sends the detection result to the 4 logic control module. The 4 logic control module increases the trigger current when the anode current is small after the trigger is turned on through the 6 turn-on drive module, so as to enhance the electron emission of the cathode emitter. gate drive;

As shown in Figure 4, the 13 temperature sensors on the GCT chip unit are connected to the 4 logic control module to provide the temperature of the GCT chip unit for the 4 logic control module, and the 4 logic control module measures 2 The voltage between the cathode and the 3 gate is corrected with the 13 temperature sensor to obtain the anode current. The 4 logic control module uses the 6 open drive module according to the value of the anode current to increase the trigger current when the anode current is small to enhance the cathode emitter. electron emission;

The 4-logic control module improves the charging time of the 3-gate trigger freewheeling inductor by modifying its internal control logic, and increases its peak current, thereby increasing the trigger current. The peak current value can typically be increased from 2A to 10A.

2. The GCT chip unit whose internal carrier lifetime is increased to >100us. After increasing the carrier lifetime in the GCT chip unit, the recombination effect of the device is weakened at the same time node, and the carrier concentration in the body becomes higher, which is conducive to the uniform conduction of the GCT device, reduces the damage probability of the GCT device, and improves the dI/dt withstand capability of GCT devices. The GCT chip unit of the present utility model is made by including but not limited to reducing the electron irradiation dose, reducing the p-base doping and other technological means, so that the internal carrier lifetime of the chip is improved, and the internal carrier Lifetime control is related to specific application scenarios. Typically, the lifetime of internal carriers can be increased from 5-10us to >100us. If this step is not done, the peak doping value of the p-base region is typically 1e17/cm ^-3 , which can be reduced to the order of 3e16-5e16/cm ^-3 or heavy metal pollution in the process flow can be avoided.

3. In the ON state, the cathode current density is approximately equal in each area of the chip (for example, the cathode current density is more than 90% equal in each area of the chip) and the cathode surface structure of the gate contact ring. Optimizing the structure of the cathode surface of the gate contact ring, such as the double gate structure, reduces the uneven triggering caused by the different stray parameters of the gate metal electrodes at various places, ensures the uniformity of the trigger current distribution, and then realizes the uniformity of the cathode current. Uniform distribution is conducive to the uniform turn-on of IGCT devices, reduces the damage probability of GCT devices, and improves the dI/dt tolerance of GCT devices. As shown in Figure 5, the cathode surface structure of the gate contact ring of the utility model is preferably a double gate structure, and the double gate structure includes a cathode circle center 14 and a plurality of concentric cathode rings 15-22 outside, two Concentric gate contact rings 23, one or more radial gate contact strips 25 and multiple cathode comb strips 24, the plurality of cathode comb strips 24 are radially arranged in a partial area of each cathode ring to form a fan-shaped area, The above optimization is to arrange the gate electrode at the center and outside of each cathode comb 24 to contact with the metal structure in the package; on the basis of adopting the double gate design, the size of the gate contact ring can also be improved, As shown in Figure 6, in the traditional structure, the upper side width is ~0.5mm, and the lower side width is ~2mm. In the improved structure of the present invention, the upper side width is 0.5mm~3mm, and the lower side width is 2mm~5.5mm.

4. A single GCT chip unit with reduced lateral dimensions. A single GCT chip unit with a reduced lateral size increases the perimeter ratio of the gate region of the GCT device to the boundary of the cathode region, which in turn facilitates faster and more uniform injection of trigger current into each cathode unit for more uniform trigger turn-on. The damage probability of the GCT device is reduced, and the dI/dt tolerance capability of the GCT device is improved. As shown in Figure 7, it shows a partial top view of the adjacent GCT chip unit in the IGCT device of the present invention, in which the gate region and three cathode combs are shown, and the gate region and three cathode combs are shown in the figure. The strips are separated by isolation regions. It can be seen from the figure that the lateral dimension of a single GCT chip unit is reduced by reducing the distance between the cathode comb strips and the maximum width of the gate metal between the cathode comb strips. Under the premise of changing, the diffusion time is reduced, and the turn-on speed is improved. Among them, in the existing GCT device structure, the comb width is 180-300um, the GCT chip unit spacing is 250-450um, and the gate width is 180-300um. Typically, the horizontal length of a single unit is about 280um. After the improvement, the comb The bar width is 2-100um, the cell pitch is 4-400um, and the gate width is 2-300um, so that the lateral length of the GCT chip unit is shortened to less than 200um.

By adopting the above structure, the withstand capacity of the IGCT device can reach 20kA/us.

It can be seen from the above that the IGCT device of the present invention has a high dI/dt tolerance, and the device can be fully turned on without damage under high dI/dt conditions, effectively reducing the time limit for limiting the rate of current rise in system applications. The anode reactance reduces the volume of the external module and improves the convenience of application.

Specifically, those skilled in the art can selectively set the specific components according to the principle of the present invention, as long as the principle of the control method of the present invention can be realized.

It should be noted that the terminology used in this specification is only for the purpose of describing specific implementations, and is not intended to limit the present utility model. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly dictates otherwise. The term "comprises", "comprises" or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article or apparatus comprising a set of elements includes not only those elements but also other elements not expressly listed elements, or also elements inherent in such a process, method, article, or apparatus. Without further limitations, an element defined by the statement "comprising..." does not exclude the presence of additional same elements in the process, method, article or device comprising said element.

It should be understood by those skilled in the art that: the above embodiments are only used to illustrate the technical solutions of the present utility model, rather than to limit it; Personnel can modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions depart from the scope of the claims of the utility model .

Claims (8)

1. a kind of integrated gate commutated thyristor device for having high current impact tolerance, including door pole stream-exchanging thyristor core Blade unit and gate-drive unit, which is characterized in that

The door pole stream-exchanging thyristor chip unit has three electrodes: anode, cathode and gate pole；

The gate-drive unit include: Logic control module, internal electric source module, open drive module, shutdown drive module, Rectification filtering module, signal lamp, optical-electronic conversion module and electrical-optical conversion module；

External power supply, the rectification filtering module, the internal electric source module are sequentially connected with；The internal electric source module respectively with Logic control module, open drive module, shutdown drive module, optical-electronic conversion module are connected with electrical-optical conversion module；Logic Control module respectively with open drive module, shutdown drive module, signal lamp and electrical-optical conversion module are connect；Open drive Dynamic model block and shutdown drive module are respectively connected to the cathode and gate pole；Input optical fibre, the optical-electronic modulus of conversion of outside Block, the Logic control module are sequentially connected with；The electrical-optical conversion module is connect with feedback optical fiber outward；The cathode, it is described Gate pole, drive module and the equal feedback link of the shutdown drive module opened is to Logic control module；

It is equipped with the cathode sliver of parallel arranged in the gate region of the device, is correspondingly provided with a gate pole under each cathode sliver Commutated thyristor chip unit, each cathode sliver pass through the area of isolation outside its edge and are isolated with gate region,

The integrated gate commutated thyristor device has one or more of:

Trigger current be promoted to the gate-drive unit of 10A, inside carrier lifetime > 100us door pole stream-exchanging thyristor chip, Cathode-current density the approximately equal gate pole in each region of chip contact ring cathode plane structure, lateral dimension foreshorten to 200um with Interior single door pole stream-exchanging thyristor unit.

2. integrated gate commutated thyristor device according to claim 1, which is characterized in that the trigger current is promoted to The gate-drive unit active detecting anode current of 10A, to promote trigger current when anode current is smaller after triggering and conducting.

3. integrated gate commutated thyristor device according to claim 2, which is characterized in that in the gate-drive unit It is additionally provided with anode current measurement sensor, the anode current measurement sensor connects respectively with the anode and Logic control module It connects.

4. integrated gate commutated thyristor device according to claim 2, which is characterized in that door pole stream-exchanging thyristor chip Unit is equipped with temperature sensor, and the temperature sensor is connected to Logic control module.

5. integrated gate commutated thyristor device according to claim 2, which is characterized in that the Logic control module Control logic improves the charging time of the triggering afterflow inductance of the gate pole, improves its peak point current, to promote triggering electricity Stream.

6. integrated gate commutated thyristor device according to claim 1, which is characterized in that the cathode-current density exists The approximately equal gate pole contact ring cathode plane structure in each region of chip is Dual Gated structure, and the Dual Gated structure includes cathode circle The heart and its outer multiple concentric cathode loops, two concentric gate poles contact rings, one or more radial direction gate pole bow strip and multiple Cathode sliver, multiple cathode slivers are radially arranged in the partial region of each cathode loop, form a fan-shaped region, In, first gate pole contact ring is located between the cathode loop of inside, another gate pole contact ring be located at outside cathode interannular or Person is located at most outer ring；It is connected between two gate pole contact rings by radial gate pole bow strip, in the center of each cathode sliver And outside is simutaneously arranged gate electrode to contact with metal structure in encapsulation.

7. integrated gate commutated thyristor device according to claim 1, which is characterized in that the cathode-current density exists The approximately equal gate pole contact ring cathode plane structure in each region of chip is Dual Gated structure, and the Dual Gated structure includes cathode circle The heart and its outer multiple concentric cathode loops, two concentric gate poles contact rings, one or more radial direction gate pole bow strip and multiple Cathode sliver, multiple cathode slivers are radially arranged in the partial region of each cathode loop, form a fan-shaped region, In, first gate pole contact ring is located between the cathode loop of inside, another gate pole contact ring be located at outside cathode interannular or Person is located at most outer ring；It is connected between two gate pole contact rings by radial gate pole bow strip, gate pole contacts the upper width of ring For 0.5mm~3mm, downside width 2mm~5.5mm.

8. integrated gate commutated thyristor device according to claim 1, which is characterized in that the lateral dimension foreshortens to In single door pole stream-exchanging thyristor unit within 200um, cathode sliver width is 2~100um, door pole stream-exchanging thyristor chip 4~400um of cell spacing, 2~300um of gate width between two cathode slivers.