CN209561414U - The integrated gate commutated thyristor device for having high current impact tolerance - Google Patents
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Abstract
The utility model provides the integrated gate commutated thyristor device that one kind has high current impact (dI/dt) tolerance, including door pole stream-exchanging thyristor chip unit and gate-drive unit, the integrated gate commutated thyristor device also has one or more of: trigger current is promoted to the gate-drive unit of 10A, the door pole stream-exchanging thyristor chip of inside carrier lifetime > 100us, cathode-current density and foreshortens to the single door pole stream-exchanging thyristor unit within 200um in the approximately equal gate pole contact ring cathode plane structure in each region of chip, lateral dimension.The integrated gate commutated thyristor device of the utility model can be sufficiently conductive without damaging under the situation that high current is impacted, it is effectively reduced in system application for limiting the anode reactance of current rise rate, reduce external module volume, improves convenience in the application.
Description
Technical field
The utility model belongs to semiconductor integrated circuit technology field more particularly to one kind has high current impact tolerance energy
Integrated gate commutated thyristor (IGCT) device of power.
Background technique
For using thyristor, gate level turn-off thyristor (GTO), IGCT as the bipolar device of representative, in opening process
In, since carrier needs to generate conductive plasma in semiconductor body by horizontal proliferation, therefore providing gate pole triggering
Regular hour delay is needed just to be able to achieve after signal sufficiently conductive.However in circuit, the anode and cathode of power electronic devices
Between voltage decline after, levels of current is mainly influenced by external loop topology with parameter, when resistance in circuit and inductance are smaller
When, electric current is often risen with the speed for being up to kA/us.In this process, if if the not sufficiently diffusion conducting of device carriers,
It is easy to cause the current density of regional area excessive, and then leads to component failure caused by occurring because of hot-spot etc..
Therefore in system application, usually by, to limit current rise rate, being kept away in IGCT device anode current-limiting reactor
Exempt to rise too fast caused component failure by electric current.Although the introducing of anode reactance may be used also other than avoiding opening process from failing
With the short circuit current and short circuit energy after the failure of effective limit device, but too low rush of current is (in rush of current, that is, device
Differentiate dI/dt of the current strength I to time t, wherein I indicates current strength in device, and t indicates the time) tolerance leads
It causes the volume of IGCT series connection anode reactance excessive, equipment volume, mechanical structure and the heat dissipation design etc. in application is all brought
No small difficulty.
Fig. 1 show the typical structure of door pole stream-exchanging thyristor (GCT) chip unit, in the door pole stream-exchanging thyristor
During triggering and conducting, from gate pole to cathode Injection Current, electronics is emitted gate-drive by cathode emitter, and to anode-side
It is spread with gate pole lower area, the hole emission of anode-side, trigger can be caused by getting over caused internal field after J2 depletion region
Part enters conductance modulation state, so that the effective resistivity inside door pole stream-exchanging thyristor reduces, so as to cause gate commutated crystalline substance
Current strength increases in brake tube, and door pole stream-exchanging thyristor above-mentioned component failure situation is easily occurred by rush of current.
Utility model content
The purpose of the utility model is to overcome above-mentioned defect existing in the prior art, propose that one kind has high dI/dt
The IGCT device of (carrying out differential calculation to electric current in time, reacted rush of current amount) tolerance, the device is in height
Can be sufficiently conductive without damaging under dI/dt situation, it can be effectively reduced in system application for limiting current rise rate
Anode reactance reduces external module volume, promotes the convenience of IGCT device application.
In order to realize above-mentioned purpose of utility model, the utility model is provided the following technical solutions:
A kind of integrated gate commutated thyristor device having high current impact tolerance, including door pole stream-exchanging thyristor
Chip unit and gate-drive unit,
The door pole stream-exchanging thyristor chip unit has three electrodes: anode, cathode and gate pole；
The gate-drive unit includes: Logic control module, internal electric source module, opens drive module, shutdown driving
Module, rectification filtering module, signal lamp, optical-electronic conversion module and electrical-optical conversion module；
External power supply, the rectification filtering module, the internal electric source module are sequentially connected with；The internal electric source module point
Not with Logic control module, open drive module, shutdown drive module, optical-electronic conversion module and electrical-optical conversion module are connect；
Logic control module respectively with open drive module, shutdown drive module, signal lamp and electrical-optical conversion module are connect；It opens
Logical drive module and shutdown drive module are respectively connected to the cathode and gate pole；The input optical fibre of outside, the optical-electronic turn
Mold changing block, the Logic control module are sequentially connected with；The electrical-optical conversion module is connect with feedback optical fiber outward；The cathode,
The gate pole, drive module and the equal feedback link of the shutdown drive module opened is to Logic control module；
It is equipped with the cathode sliver of parallel arranged in the gate region of the device, is correspondingly provided with one under each cathode sliver
Door pole stream-exchanging thyristor chip unit, each cathode sliver pass through the area of isolation outside its edge and are isolated with gate region,
The integrated gate commutated thyristor device has one or more of:
Trigger current is promoted to the door pole stream-exchanging thyristor of the gate-drive unit of 10A, inside carrier lifetime > 100us
Chip, cathode-current density are foreshortened in the approximately equal gate pole contact ring cathode plane structure in each region of chip, lateral dimension
Single door pole stream-exchanging thyristor unit within 200um.
Further, the trigger current is promoted to the gate-drive unit active detecting anode current of 10A, to trigger
Trigger current is promoted after conducting when anode current is smaller.
Further, anode current measurement sensor, the anode current measurement are additionally provided in the gate-drive unit
Sensor is separately connected with the anode and Logic control module.
Further, door pole stream-exchanging thyristor chip unit is equipped with temperature sensor, and the temperature sensor, which is connected to, patrols
Collect control module.
Further, the control logic of the Logic control module improves filling for the triggering afterflow inductance of the gate pole
The electric time improves its peak point current, to promote trigger current.
Further, the cathode-current density is in the approximately equal gate pole contact ring cathode plane structure in each region of chip
Dual Gated structure, the Dual Gated structure include that the cathode center of circle and its outer multiple concentric cathode loops, two concentric gate poles connect
Ring is touched, one or more radial gate pole bow strip and multiple cathode slivers, multiple cathode slivers are radially arranged in each cathode
In the partial region of ring, a fan-shaped region is formed, wherein first gate pole contact ring is located between the cathode loop of inside, separately
One gate pole contact ring is located at the cathode interannular in outside or is located at most outer ring；Pass through radial door between two gate pole contact rings
Pole bow strip is connected, and is simutaneously arranged gate electrode in the center of each cathode sliver and outside to connect with metal structure in encapsulation
Touching.
Further, the cathode-current density is in the approximately equal gate pole contact ring cathode plane structure in each region of chip
Dual Gated structure, the Dual Gated structure include that the cathode center of circle and its outer multiple concentric cathode loops, two concentric gate poles connect
Ring is touched, one or more radial gate pole bow strip and multiple cathode slivers, multiple cathode slivers are radially arranged in each cathode
In the partial region of ring, a fan-shaped region is formed, wherein first gate pole contact ring is located between the cathode loop of inside, separately
One gate pole contact ring is located at the cathode interannular in outside or is located at most outer ring；Pass through radial door between two gate pole contact rings
Pole bow strip is connected, and the upper width that gate pole contacts ring is 0.5mm~3mm, downside width 2mm~5.5mm.
Further, the lateral dimension foreshortens in the single door pole stream-exchanging thyristor unit within 200um, cathode comb
Width is 2~100um, 4~400um of door pole stream-exchanging thyristor chip unit spacing, the gate width 2 between two cathode slivers
~300um.The IGCT device of the utility model has high dI/dt tolerance, and the device can fill under high dI/dt situation
Divide conducting without damaging, effectively reduces in system application for limiting the anode reactance of current rise rate, reduce outside
Module volume promotes the convenience of application.
It should be understood that foregoing general description and following detailed description are all exemplary, and it is intended to mention
For the further explanation of claimed technology.
Detailed description of the invention
The utility model embodiment is described in more detail in conjunction with the accompanying drawings, the utility model above-mentioned and its
Its purpose, feature and advantage will be apparent.Attached drawing is used to provide to further understand the utility model embodiment, and
And part of specification is constituted, it is used to explain the utility model together with the utility model embodiment, not constitute to this reality
With novel limitation.Unless explicitly stated otherwise, otherwise attached drawing is not considered as drawn to scale.In the accompanying drawings, identical reference label
Typically represent same components or step.In the accompanying drawings:
Fig. 1 is to show tradition GCT cell schematics in the prior art；
Fig. 2 is to show tradition IGCT cell schematics in the prior art；
Fig. 3 is the IGCT device for installing anode current measurement sensor additional in gate-drive for showing the utility model；
Fig. 4 is the IGCT device for showing the reload temperature sensor of the utility model；
Fig. 5 is the Dual Gated structure of IGCT unit in the IGCT device for show the utility model；
Fig. 6 is the gate pole contact ring cross-sectional view of Dual Gated structure in the IGCT device for show the utility model；
Fig. 7 is the partial top view in the IGCT device for show the utility model comprising adjacent GCT chip unit.
Specific embodiment
In order to enable the purpose of this utility model, technical solution and advantage become apparent, retouch in detail below with reference to accompanying drawings
State example embodiment according to the present utility model.Obviously, described embodiment is only a part of the embodiment of the utility model,
Rather than the whole embodiments of the utility model, it should be appreciated that the utility model is not limited by example embodiment described herein.
Based on embodiment described herein, those skilled in the art are obtained all in the case where not making the creative labor
Other embodiments should all be fallen within the protection scope of the utility model.In the present description and drawings, it will use identical attached
Icon note indicates substantially the same element and function, and by omission to the duplicate explanation of these elements and function.In addition, being
It is clear and succinct, it is convenient to omit for the explanation of function and construction known in the art.
The structure of brief introduction tradition IGCT device first, as shown in Fig. 2, tradition IGCT device includes GCT chip unit and door
Pole driving unit, wherein
GCT chip unit has three electrodes: 1 anode, 2 cathodes and 3 gate poles, the internal structure of GCT chip unit such as Fig. 1 institute
Show, be successively arranged from cathode to anode: n+Emitter or cathode emitter, the base area p, the base area n, n+Buffer layer, p+Emitter or sun
Pole emitter, p base region surface are equipped with gate pole；
Gate-drive unit include: 4 Logic control modules, 5 internal electric source modules, 6 open drive module, 7 shutdown driving
Module, 8 rectification filtering modules, 9 signal lamps, 10 optical-electronic conversion modules and 11 electrical-optical conversion modules.
External power supply, 8 rectification filtering modules, 5 internal electric source modules are sequentially connected with, and provide power supply for IGCT device；Inside 5
Power module opens drive module, 7 shutdown drive modules, 10 optical-electronic moduluss of conversion as power supply with 4 Logic control modules, 6 respectively
Block and the connection of 11 electrical-optical conversion modules；The control of 4 Logic control modules coupled 6 opens drive module, 7 shutdowns respectively
Drive module, 9 signal lamps and 11 electrical-optical conversion modules, wherein 6 open drive module and 7 shutdown drive modules distinguish
2 cathodes and 3 gate poles of GCT chip unit are connected to, to realize the opening and closing to GCT chip unit of 4 Logic control modules
Disconnected control；Input optical fibre, 10 optical-electronic conversion modules, 4 Logic control modules of outside are sequentially connected with, by external input light
Optics control signal in fibre is sent to 4 Logic control modules；11 electrical-optical conversion modules connect feedback optical fiber outward, to export 4
The feedback signal of Logic control module；2 cathodes, 3 gate poles, 6 open drive module and the 7 shutdown equal feedback links of drive module to 4
Logic control module is to provide feedback signal.
The IGCT device for having high dI/dt tolerance of the utility model has compared to above-mentioned tradition IGCT device
One or more of structure:
1. have can active detecting anode current, trigger current is promoted when anode current is smaller after triggering and conducting, with
Enhance the gate-drive unit of the electron emission of cathode emitter.Component damage is caused due to dI/dt main reason is that, mistake
The manufacturing process and stray parameter of fast current rise rate cooperation non-uniformity can make chip there was only part conducting, pass through
Excessive electric current causes device global failure, after the trigger current by enhancing gate-drive unit, saves at the same time
The trigger current that device integrally injects on point becomes larger, and carrier becomes more, is conducive to GCT device uniform conducting.
In the gate-drive unit of the utility model, the function of gate-drive unit active detecting anode current is to pass through
It installs the current sensors such as anode current measurement sensor such as Hall sensor additional in the gate-drive unit or passes through measurement
Gate pole and cathode voltage simultaneously cooperate temperature sensor to correct to obtain anode current to realize:
As shown in figure 3, anode current measurement sensor is connect to measure GCT chip unit with the anode of GCT chip unit
Anode current, anode current measurement sensor is additionally coupled to 4 Logic control modules, so that IGCT device passes through 12 Halls such as and passes
The anode current measurement sensor active detecting anode current of sensor, and will test result and be sent to 4 Logic control modules, 4 patrol
Volume control module opens drive module by 6 and promotes trigger current when anode current is smaller after triggering and conducting, to enhance yin
The gate-drive of the electron emission of pole emitter；
As shown in figure 4,13 temperature sensors on GCT chip unit are connected to 4 Logic control modules, it is 4 logic controls
Module provides the temperature of GCT chip unit, and 4 Logic control modules measure 2 cathodes and 3 by 2 cathodes, the feedback signal of 3 gate poles
Door voltage across poles simultaneously cooperates 13 temperature sensors to correct to obtain anode current, and 4 Logic control modules are logical according to the value of anode current
It crosses 6 and opens drive module and promote trigger current when anode current is smaller after triggering and conducting, to enhance the electricity of cathode emitter
Son transmitting；
4 Logic control modules are to promote the charging of the triggering afterflow inductance of 3 gate poles by modifying its internal control logic
Time improves its peak point current, to promote trigger current, peak current value typically, can be promoted to 10A by 2A.
2. inside carrier lifetime is promoted to > the GCT chip unit of 100us.Increase carrier lifetime in GCT chip unit
Afterwards, device compound action weakens on node at the same time, and internal carrier concentration is got higher, and is conducive to the uniform of GCT device
Conducting, reduces the damage probability of GCT device, improves the dI/dt tolerance of GCT device.The GCT chip of the utility model
Unit is made by including but not limited to reducing electron irradiation dosage, reducing the process means such as p base doping, so that the core
The inside carrier lifetime of piece gets a promotion, and the control of internal carrier lifetime is related to specific application scenarios, typically, can
Internal carrier lifetime is promoted to > 100us from 5-10us, wherein be made in the process means of the GCT chip unit, wrap
Including reduction dose of radiation can reduce to this step is not done, and the base area p peak dopant representative value is 1e17/cm-3, 3e16- can be reduced to
5e16/cm-3Magnitude avoids heavy metal pollution in process flow.
3. under opening state, cathode-current density is approximately equal (for example, cathode-current density is in chip in each region of chip
Each region reaches 90% or more equal extent) gate pole contact ring cathode plane structure.Ring cathode plane structure is contacted to the gate pole
If Dual Gated structure optimizes, guarantor uneven by the different caused triggerings of gate metal electrode stray parameter everywhere is reduced
The uniformity of trigger current distribution is demonstrate,proved, and then realizes that cathode current evenly distributes, it is uniformly open-minded to be conducive to IGCT device, reduces
The damage probability of GCT device, improves the dI/dt tolerance of GCT device.As shown in figure 5, the gate pole of the utility model connects
Touching ring cathode plane structure is preferably Dual Gated structure, and the Dual Gated structure includes that the cathode center of circle 14 and its outside multiple are concentric
Cathode loop 15-22, two concentric gate poles contact ring 23, one or more radial gate pole bow strip 25 and multiple cathode slivers 24,
Multiple cathode slivers 24 are radially arranged in the partial region of each cathode loop, form a fan-shaped region, the optimization
Gate electrode is simutaneously arranged to contact with metal structure in encapsulation in the center of each cathode sliver 24 and outside；Using double
On the basis of gate pole design, the size that can also contact ring to gate pole is improved, as shown in fig. 6, in traditional structure, upper width
~0.5mm, downside width~2mm, in the improvement structure of the utility model, upper width 0.5mm~3mm, downside width 2mm
~5.5mm.
4. reducing the single GCT chip unit of lateral dimension.Reduce the single GCT chip unit of lateral dimension, so that
The gate region of GCT device relative to cathode zone boundary perimeter than increasing, and then be conducive to trigger current faster more uniformly
Each cathode electrode unit is injected, is more uniformly triggered open-minded, the damage probability of GCT device is reduced, improves GCT device
DI/dt tolerance.As shown in fig. 7, showing the office in the IGCT device of the utility model comprising adjacent GCT chip unit
Portion's top view shows gate region and wherein three cathode slivers in figure, and gate region and three cathode slivers are by isolated area
Domain separates, as seen from the figure, by way of the gate metal maximum width for reducing cathode sliver spacing and reducing between cathode sliver
The lateral dimension for reducing single GCT chip unit, reduces diffusion time under the premise of equivalent diffusion length is constant, improves
Open speed.Wherein, in existing GCT device architecture, sliver width be 180~300um, GCT chip unit spacing be 250~
The lateral length of 450um, 180~300um of gate width, the typically single unit are about 280um, and after improvement, sliver is wide
Degree is 2~100um, 4~400um of cell spacing, 2~300um of gate width, so that the lateral length of GCT chip unit shortens
To 200um.
By taking above structure, IGCT device tolerance may make to reach 20kA/us.
From the foregoing, it will be observed that the IGCT device of the utility model has high dI/dt tolerance, the device is in high dI/dt shape
Can be sufficiently conductive without damaging under condition, it effectively reduces in system application for limiting the anode reactance of current rise rate,
External module volume is reduced, the convenience of application is promoted.
Specifically, those skilled in the art can select the specific component with principle according to the present utility model
Property setting, as long as can be realized the principle of the control method of the utility model.
It should be noted that purpose of the term as used in this specification merely for description particular implementation, rather than
It is intended to limit the utility model.Unless the context clearly indicates otherwise, otherwise singular as used herein
" one ", "one" and "the" be also intended to including plural form.The terms "include", "comprise" or its any other variant are intended to
Cover non-exclusive inclusion, so that the process, method, article or equipment for including a series of elements not only includes those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or setting
Standby intrinsic element.In the absence of more restrictions, the element limited by sentence " including ... ", it is not excluded that wrapping
Include in the process, method, article or equipment of the element that there is also other identical elements.
Those skilled in the art should understand that: the above various embodiments is only to illustrate the technical side of the utility model
Case, rather than its limitations；Although the present invention has been described in detail with reference to the aforementioned embodiments, but the skill of this field
Art personnel are possible to modify the technical solutions described in the foregoing embodiments, or special to some or all of technologies
Sign is equivalently replaced；And these are modified or replaceed, the utility model right that it does not separate the essence of the corresponding technical solution
The range of claim.
Claims (8)
1. a kind of integrated gate commutated thyristor device for having high current impact tolerance, including door pole stream-exchanging thyristor core
Blade unit and gate-drive unit, which is characterized in that
The door pole stream-exchanging thyristor chip unit has three electrodes: anode, cathode and gate pole；
The gate-drive unit include: Logic control module, internal electric source module, open drive module, shutdown drive module,
Rectification filtering module, signal lamp, optical-electronic conversion module and electrical-optical conversion module；
External power supply, the rectification filtering module, the internal electric source module are sequentially connected with；The internal electric source module respectively with
Logic control module, open drive module, shutdown drive module, optical-electronic conversion module are connected with electrical-optical conversion module；Logic
Control module respectively with open drive module, shutdown drive module, signal lamp and electrical-optical conversion module are connect；Open drive
Dynamic model block and shutdown drive module are respectively connected to the cathode and gate pole；Input optical fibre, the optical-electronic modulus of conversion of outside
Block, the Logic control module are sequentially connected with；The electrical-optical conversion module is connect with feedback optical fiber outward；The cathode, it is described
Gate pole, drive module and the equal feedback link of the shutdown drive module opened is to Logic control module；
It is equipped with the cathode sliver of parallel arranged in the gate region of the device, is correspondingly provided with a gate pole under each cathode sliver
Commutated thyristor chip unit, each cathode sliver pass through the area of isolation outside its edge and are isolated with gate region,
The integrated gate commutated thyristor device has one or more of:
Trigger current be promoted to the gate-drive unit of 10A, inside carrier lifetime > 100us door pole stream-exchanging thyristor chip,
Cathode-current density the approximately equal gate pole in each region of chip contact ring cathode plane structure, lateral dimension foreshorten to 200um with
Interior single door pole stream-exchanging thyristor unit.
2. integrated gate commutated thyristor device according to claim 1, which is characterized in that the trigger current is promoted to
The gate-drive unit active detecting anode current of 10A, to promote trigger current when anode current is smaller after triggering and conducting.
3. integrated gate commutated thyristor device according to claim 2, which is characterized in that in the gate-drive unit
It is additionally provided with anode current measurement sensor, the anode current measurement sensor connects respectively with the anode and Logic control module
It connects.
4. integrated gate commutated thyristor device according to claim 2, which is characterized in that door pole stream-exchanging thyristor chip
Unit is equipped with temperature sensor, and the temperature sensor is connected to Logic control module.
5. integrated gate commutated thyristor device according to claim 2, which is characterized in that the Logic control module
Control logic improves the charging time of the triggering afterflow inductance of the gate pole, improves its peak point current, to promote triggering electricity
Stream.
6. integrated gate commutated thyristor device according to claim 1, which is characterized in that the cathode-current density exists
The approximately equal gate pole contact ring cathode plane structure in each region of chip is Dual Gated structure, and the Dual Gated structure includes cathode circle
The heart and its outer multiple concentric cathode loops, two concentric gate poles contact rings, one or more radial direction gate pole bow strip and multiple
Cathode sliver, multiple cathode slivers are radially arranged in the partial region of each cathode loop, form a fan-shaped region,
In, first gate pole contact ring is located between the cathode loop of inside, another gate pole contact ring be located at outside cathode interannular or
Person is located at most outer ring；It is connected between two gate pole contact rings by radial gate pole bow strip, in the center of each cathode sliver
And outside is simutaneously arranged gate electrode to contact with metal structure in encapsulation.
7. integrated gate commutated thyristor device according to claim 1, which is characterized in that the cathode-current density exists
The approximately equal gate pole contact ring cathode plane structure in each region of chip is Dual Gated structure, and the Dual Gated structure includes cathode circle
The heart and its outer multiple concentric cathode loops, two concentric gate poles contact rings, one or more radial direction gate pole bow strip and multiple
Cathode sliver, multiple cathode slivers are radially arranged in the partial region of each cathode loop, form a fan-shaped region,
In, first gate pole contact ring is located between the cathode loop of inside, another gate pole contact ring be located at outside cathode interannular or
Person is located at most outer ring；It is connected between two gate pole contact rings by radial gate pole bow strip, gate pole contacts the upper width of ring
For 0.5mm~3mm, downside width 2mm~5.5mm.
8. integrated gate commutated thyristor device according to claim 1, which is characterized in that the lateral dimension foreshortens to
In single door pole stream-exchanging thyristor unit within 200um, cathode sliver width is 2~100um, door pole stream-exchanging thyristor chip
4~400um of cell spacing, 2~300um of gate width between two cathode slivers.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109979998A (en) * | 2018-12-27 | 2019-07-05 | 清华大学 | The integrated gate commutated thyristor device for having high current impact tolerance |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109979998A (en) * | 2018-12-27 | 2019-07-05 | 清华大学 | The integrated gate commutated thyristor device for having high current impact tolerance |
| CN109979998B (en) * | 2018-12-27 | 2024-02-09 | 清华大学 | Integrated gate commutated thyristor device with high current surge tolerance |
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