CN107611193A - A kind of carbonization avalanche silicon diode of the new table top vertical stratifications of n i p n half and preparation method thereof - Google Patents
A kind of carbonization avalanche silicon diode of the new table top vertical stratifications of n i p n half and preparation method thereof Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 18
- 239000010703 silicon Substances 0.000 title claims abstract description 18
- 238000003763 carbonization Methods 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 238000013517 stratification Methods 0.000 title abstract description 7
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of carbonization avalanche silicon diode of the new table top vertical stratifications of n i p n half and preparation method thereof.The application carbonization avalanche silicon diode, is n i p n structures, includes successively from top to bottom：Lower Metal contact electrode, n-type conductive SiC substrates, p-type SiC contact layers, i type SiC avalanche layers, n-type SiC transition zones, n+ type SiC contact layers and upper Metal contact electrode, wherein, n-type SiC transition zones and n+ type SiC contact layers form lower small mesa shaped upper greatly, the lower surface area of n-type SiC transition zones is less than i type SiC avalanche layer upper surface areas, and the upper surface of the periphery of n-type SiC transition zones, the periphery of n+ type SiC contact layers and the i type SiC avalanche layers not covered by n-type SiC transition zones is equipped with passivation layer.Present invention decreases etching injury, improves device cost performance；Device can use the n-type Ohmic contact of better quality；Device operating efficiency is improved, reduces avalanche noise, reduces extraction wire quantity, reduces device cost.
Description
Technical field
The present invention relates to a kind of carbonization avalanche silicon diode of new table top vertical stratifications of n-i-p-n half and its preparation side
Method, belong to carbonization avalanche silicon diode field.
Background technology
One of representative as third generation wide bandgap semiconductor, carborundum (SiC) have broad-band gap, high breakdown field strength, height
The good characteristics such as electron saturation velocities, high heat conductance and chemical stability be good.Recently as both at home and abroad to the big of SiC material
Innovation Input is measured, quality of materials and manufacturing process technology all significantly improve, become and prepare high power, high-temperature, Yi Jigao
The preferred material of the ultraviolet avalanche probe part (APD) of efficiency.Wherein, the energy gap of 4H-SiC semi-conducting materials is 3.26eV,
It is to prepare blind ultraviolet APD (the response sides of visible ray<Preferred material 400nm)；Ultraviolet APD based on 4H-SiC materials with it is traditional
The ultraviolet APD of silicon substrate is compared, and 4H-SiC APD have higher sensitivity, lower dark current and more preferable high-temperature stability, no
Need to use the cooling system of costliness；Compared with ultravioplet photomultiplier, 4H-SiC APD have that body weight is small, low in energy consumption, quantum
Efficiency high, it is easy to the advantages that optical filter integrated and that costliness need not be installed additional.
Based on the significant comprehensive advantages of more than 4H-SiC APD, this forward position direction is always domestic outer semiconductor in recent years
The focus that field is competitively researched and developed.The conventional ultraviolet APD products of SiC come into market, are mainly used in the purple of industrial circle
The measurement of external radiation dosage and solar radiation index.However, for many emerging application fields, it is fast to faint UV signal
Speed measurement is only where real demand, that is to say, that the ultraviolet APD of semiconductor used must have great gain, and only have
Ultraviolet APD based on SiC semiconductor can just meet this requirement.Because SiC APD are half with internal photocurrent gain
Conductor opto-electronic device, it obtains the snow of photoelectric current using impact ionization of the photo-generated carrier in diode depletion layer
Multiplication is collapsed, can the response speed with nanosecond order, 105Gain above.The 4H-SiC of detectable atomic weak UV signal
APD has great potential application in many core technologies, mainly includes：Forest Fire Alarm, Missile Plume are pre-
Alert and monitoring, the corona arc-detection imaging of high-voltage fence, biological monitoring, quantum communication, medical image processing etc..
At present, common 4H-SiC APD structures mainly have pn-junction structure APD, p-i-n structure APD, and photonic absorption electricity
Lotus multiplication region separation (SAM) APD etc..Pn-junction SiC APD advantages are that generally have relatively low avalanche breakdown voltage (being less than 65V), but
It is that pn-junction depletion region is narrow, quantum efficiency is relatively low, and dark current is higher, and body tunnelling current is larger.SAM SiC APD are used photon
The structure that uptake zone separates with carrier multiplication area, and be non-doped layer, by increasing by one between uptake zone and multiplication region
Individual doped layer, control APD inside are particularly two non-Electric Field Distributions for mixing region, realize the mesh such as high-quantum efficiency, low-dark current
Mark, but it is complicated, and preparation difficulty is big, and cost is higher.P-i-n SiC APD are on the basis of pn-junction SiC APD, in pn-junction
Intrinsic (intrinsic) layer is lightly doped in centre insertion, while as photonic absorption and the region of carrier multiplication, is greatly enhanced
Quantum efficiency and reduce dark current.Compared with first two structure, p-i-n SiC APD, which have, prepares simple, cost performance
The advantages that high, can large-scale application in industrial circle.
Generally, p-i-n SiC APD can segment two kinds：One kind is that top is p+ type contact layers, and bottom is that n-type is led
The p-i-n types APD of electric substrate；Another kind is that top is n+ type contact layers, and bottom is the n-i-p types APD of P type contact layer.One
Traditional p-i-n type SiC APD structures are as shown in Figure 1：Epitaxial layer is respectively p+ contact layers, p transition zones, i snowslides from top to bottom
Layer (weak p-type), n-contact layer and n-type conductive substrates.Due to having used highly doped n-type SiC substrate, so APD devices can be adopted
With n-type back electrode, i.e. device is upper/lower electrode vertical stratification, and when being integrated into circuit, back electrode can be used as public electrode, often
Individual device only needs to draw a wire on the top electrode.This structure deep ultraviolet band be based on electron avalanche, by
In in SiC material the impact ionization coefficient of electronics it is relatively low compared with hole, therefore the operating efficiency of device is relatively low, and avalanche multiplication is made an uproar
Sound is larger.On the other hand, the p-type SiC ohmic contact of currently acquired high quality remains challenge, and low-quality p-type SiC Europe
Nurse contact can cause larger lateral resistance so that electric field near metal electrode can not uniform expansion, constrain p-i-n types
The further lifting of SiC APD performances.
One traditional n-i-p type SiC APD structure is as shown in Figure 2：Epitaxial layer is respectively n+ contact layers, n from top to bottom
Transition zone, i avalanche layers (weak n-type), P type contact layer and n-type conductive substrates.It is few currently for the method for p-type SiC doping, and
Deficiency, this problem such as generally existing complex process efficiency is low limit the commercialization of p-type SiC substrate, considerably increase tradition
N-i-p type SiC APD cost of manufacture, turn into this device large-scale application in industrial circle one keep in check greatly.Therefore, people are not
Not in n-type conductive substrates, epitaxial p-type contact layer is to prepare n-i-p type SiC APD, and existing inclined table n-i-p types
SiC APD devices are all that table top is from top to bottom etched into p always across i layers from n+ contact layers by traditional table top production method to connect
Contact layer, the thickness of i layers is bigger, and etching depth is bigger, and device preparation cost is higher, and etching injury is more serious.Therefore, divide more than
Analysis, in the SiC APD device structure designs with inclined table, suppress tunnelling current and lifter by inserting thick i layers
It is conflicting between part quantum efficiency and reduction device cost and etching injury.Further, since n-i-p types APD is employed
Plane electrode designs, and each device must draw two wires when being integrated into circuit, and this also increases to a certain extent
The preparation section of device, improves cost.
The content of the invention
Operating efficiency is low in order to solve in traditional p-i-n types SiC APD, and avalanche multiplication noise is big, p-type Ohmic contact quality
Price must be used high in the problems such as poor, and traditional n-i-p types SiC APD and not yet commercialized p-type silicon carbide substrates,
Etching depth is big, and etching injury is serious, and extraction wire quantity is more, the problems such as preparing high expensive, and the invention provides a kind of new
Carbonization avalanche silicon diode of the table top vertical stratifications of type n-i-p-n half and preparation method thereof.
In order to solve the above technical problems, the technical solution adopted in the present invention is as follows：
A kind of carbonization avalanche silicon diode of the table top vertical electrode structures of new n-i-p-n half, is n-i-p-n structures；Newly
The carbonization avalanche silicon diode of the table top vertical electrode structures of type n-i-p-n half includes successively from top to bottom：Lower Metal contact electrode,
N-type conductive SiC substrates, p-type SiC contact layers, i type SiC avalanche layers, n-type SiC transition zones, n+ type SiC contact layers and upper metal connect
Touched electrode, wherein, n-type SiC transition zones and n+ type SiC contact layers form lower small mesa shaped upper greatly, under n-type SiC transition zones
Surface area is less than i type SiC avalanche layer upper surface areas, the periphery of n-type SiC transition zones, the periphery of n+ type SiC contact layers and
Passivation layer is not equipped with by the upper surface of the i type SiC avalanche layers of n-type SiC transition zones covering.
The nouns of locality such as the application is upper and lower, top surface, bottom surface refer both to the relative position of diode normal use, during normal use
It is direction from top to bottom from upper Metal contact electrode to the direction of lower Metal contact electrode；Go up small mesa shaped greatly down namely indulge
Section is up-small and down-big trapezoidal shape；The lower surface area of n-type SiC transition zones is less than i type SiC avalanche layer upper surface areas,
That is the contact surface of i types SiC avalanche layers and n-type SiC transition zones, the area of i type SiC avalanche layers are more than the face of n-type SiC transition zones
Product.The application table top can be round platform or other shapes of table top.
Applicant it has been investigated that：The new table top vertical electrode structure SIC APD of n-i-p-n half positive opening feature with
Reverse breakdown characteristics and traditional n-i-p full courts facial plane electrode structure SiC APD are essentially identical.Through analysis, the p-type of heavy doping connects
Contacted with each other between contact layer and n-type conductive substrates and form the very narrow pn-junction of depletion region, when the new table top vertical electrodes of n-i-p-n half
When structure SIC APD is worked under forward bias, the very narrow pn-junction of depletion region is operated in reverse biased, serves similar tunnel knot
Effect, partial pressure very little thereon；When the new table top vertical electrode structure SIC APD of n-i-p-n half work under reverse bias
When, the very narrow pn-junction of depletion region is operated in forward bias, serves the effect of similar small resistor, partial pressure thereon also very little.Cause
This, the new table top vertical electrode structure SIC APD of n-i-p-n half and traditional n-i-p full courts facial plane electrode structure SiC APD's
Current-voltage (I-V) characteristic is essentially identical.
Applicant optimizes " traditional n-i-p full courts facial plane electrode structure carborundum in the prior art by above-mentioned improvement
The etching depth of avalanche diode must reach p layers contact layer " deficiency, reduce etching depth and etching injury, improve
Device cost performance, employs the n-type Ohmic contact of better quality, reduces extraction wire quantity, save element manufacturing into
This.
Further preferably, the thickness of upper and lower Metal contact electrode is 0.1-10 μm.
Further preferably, the thickness of n-type conductive SiC substrates is 50-500 μm；The thickness of p-type SiC contact layers is 1-20 μm；i
The thickness of type SiC avalanche layers is 0.2-2 μm；The thickness of n-type SiC transition zones is 0.1-0.5 μm；The thickness of n+ type SiC contact layers
For 0.1-0.5 μm.
It is preferred that the base angle of table top is less than 45 °.The application angle is without especially small, when prepared by angle too small, poor controllability,
And etching depth is big, operation difficulty is increased.
The structure of upper and lower Metal contact electrode is identical, includes what is connected successively：Ni layers, Ti layers, Al layers and Au layers, and
Thickness is 35nm, 50nm, 200nm and 100nm successively, and the Ni layers of upper Metal contact electrode connect with n+ type SiC contact layers, lower gold
The Ni layers of category contact electrode connect with n-type conductive SiC substrates.Applicant it has been investigated that：Ni can be in the situation at as little as 500 DEG C
Si in lower and SiC forms Ni extremely stable under high temperature2Si, and then effectively reduce annealing temperature；Ti layers can with SiC
C reacts to form Ti3SiC2And more carbon compounds such as TiC, the carbon clusters that electrode interface goes out effectively are reduced, reduces device and reversely leaks
Electricity；Al layers reduce the Schottky barrier between metal and semiconductor as intermediate layer, promote the formation of Ohmic contact；Au is done
For the metal that a kind of chemical property is stable, serve in metal electrode top and protected other metals not oxidized.With letter
Single Ni/Au alloy electrodes are compared, and Ni/Ti/Al/Au combination electrodes have more preferable Ohmic contact quality, the contact of smaller ratio
Resistance and lower reverse leakage current.
The preparation method of the carbonization avalanche silicon diode of the above-mentioned table top vertical electrode structures of new n-i-p-n half, leads in n-type
Epitaxial growth p-type SiC contact layers, i type SiC avalanche layers, n-type SiC transition zones and n+ types SiC contacts successively in electric SiC substrate
Layer, then from top to bottom forms inclined table, inclined table is only carved using Photoresist reflow and plasma dry etching method
Erosion reaches i type SiC avalanche layers；Then Passivation Treatment is done to the surface after etching, forms passivation layer；Finally complete upper and lower
The preparation of Metal contact electrode, wherein, upper Metal contact electrode is located at the top of n+ type SiC contact layers, lower Metal contact electrode
Positioned at the bottom of n-type conductive SiC substrates；The material of upper and lower Metal contact electrode includes at least one in titanium, aluminium, nickel, gold or platinum
Kind.
Angle tilt table top, which only etches, reaches i type SiC avalanche layers, refers to and etches from top to bottom, has just reached i types SiC
The upper epidermis of avalanche layer.Inclined table corresponds to foregoing mesa shaped.
The direction of growth of above-mentioned n-i-p-n structures is from top to bottom, etching direction is from top to bottom.
Upper and lower Metal contact electrode can be single-layer metal or multilayer metal compound mechanism.Upper and lower Metal contact electrode
Composition can be the same or different.
The mesa definition that prior art is etched to P type contact layer by the application is full court face, and the table top for being etched to i layers is determined
Justice is half table top；It is planar electrode structure by electrode definition of the position respectively with P type contact layer at the top of n+ types contact layer, will
Electrode definition of the position respectively with n-type conductive substrates bottom at the top of n+ types contact layer is vertical electrode structure.
In order to further improve device operating efficiency, avalanche noise is reduced, the average doping concentration of p-type SiC contact layers is situated between
In 2 × 1017/cm-3-3×1019/cm-3Between；The average doping concentration of i type SiC avalanche layers is between 2 × 1012/cm-3-1×
1017/cm-3Between；The average doping concentration of n-type SiC transition zones is between 2 × 1017/cm-3-1×1019/cm-3Between；N+ types SiC
The average doping concentration of contact layer is more than the average doping concentration of n-type SiC transition zones.
The application " between ... between " include both ends point value.
Further preferably, the average disruptive field intensity of material is all higher than 5MV/cm used by passivation layer.
Material is SiO used by above-mentioned passivation layer2、Si3N4Or SiNxAt least one of.
The NM technology of the present invention is with reference to prior art.
The carbonization avalanche silicon diode of the new table top vertical stratifications of n-i-p-n half of the present invention, tilting table is etched by reducing
Face depth, reduces etching injury, improves device cost performance；By using between bottom n-type conductive substrates and P type contact layer
Tunnel knot, device is set to use the n-type Ohmic contact of better quality；Avoiding high using price and not yet commercialized p
While type silicon carbide substrates, device operating efficiency is improved using hole injection, avalanche noise is reduced, reduces extraction and lead
Line number amount, reduces device cost.
Brief description of the drawings
Fig. 1 is traditional table top vertical electrode structure SIC APD schematic diagrames of p-i-n types half, and the device is prepared on n-type SiC
On backing material；
Fig. 2 is that traditional n-i-p types full court facial plane electrode structure SiC APD schematic diagrames and equivalent circuit diagram, the device are
Prepare on n-type SiC substrate material；
Fig. 3 is the table top vertical electrode structure SIC APD schematic diagrames of n-i-p-n types half and equivalent electric in the embodiment of the present invention 1
Lu Tu, the device are prepared on n-type SiC substrate material；
Fig. 4 is the n-i-p type full courts face traditional under high reverse bias voltages being calculated using Silvaco device modeling softwares
Planar electrode structure SiC APD inside field intensity map, wherein left figure are the section two-dimensional distribution of field strength change；Right figure is
Along the field strength change curve of n+ contact layers vertical direction at P type contact layer；
Fig. 5 is the table tops of n-i-p-n half new under high reverse bias voltages being calculated using Silvaco device modeling softwares
The inside field intensity map of vertical electrode structure carborundum avalanche diode, wherein left figure are the section Two dimensional Distribution of field strength change
Figure；Right figure is the field strength change curve along n+ contact layers vertical direction at n-contact layer；
Fig. 6 is traditional n-i-p types full court facial plane electrode structure SiC APD and the new n-i-p-n types of the embodiment of the present invention 1
Half table top vertical electrode structure SIC APD dark current curve comparison figure；
Fig. 7 is traditional n-i-p types full court facial plane electrode structure SiC APD and the new n-i-p-n types of the embodiment of the present invention 1
Half table top vertical electrode structure SIC APD spectral response curve comparison diagram；
Fig. 8 is the table top vertical electrode SiC APD and p-i-n full court facial plane electrode structure SiC APD of n-i-p-n half increasing
Beneficial comparison diagram, in figure, thick lines represent the table top vertical electrode SiC APD of n-i-p-n half, and hachure represents p-i-n full courts face and put down
Face electrode structure SiC APD；
Because device architecture is usually symmetrical, so the right half part section conduct that Fig. 4, Fig. 5 only depict device is shown
It is intended to；
In figure, 1 is lower Metal contact electrode, and 2 be n-type SiC conductive substrates, and 3 be n-contact layer, and 4 be i type SiC snowslides
Layer, 5 be p-type SiC transition zones, and 6 be p+ type SiC contact layers, and 7 be passivation layer, and 8 be upper Metal contact electrode, and 9 be that p-type SiC is contacted
Layer, 10 be n-type SiC transition zones, and 11 be n+ type SiC contact layers, and 12 be the first device equivalent circuit diagram, and 13 be that the second device is equivalent
Circuit diagram.
Embodiment
For a better understanding of the present invention, with reference to the embodiment content that the present invention is furture elucidated, but the present invention
Content is not limited solely to the following examples.
Embodiment 1
As shown in figure 3, using the new table top vertical electrode structures of n-i-p-n half, the device is to be prepared in n-type SiC linings
On bottom material.It is respectively p-type SiC transition zones, i type SiC avalanche layers, n-type SiC transition from bottom to up from n-type SiC conductive substrates
Layer and n+ type SiC contact layers；Table top is only needed to etch into below n-type transition zone, and table top bottom is on i type SiC avalanche layers.Under
Metal contact electrode is covered in n-type SiC conductive substrates, and upper Metal contact electrode is on n+ type SiC contact layers.
Comparative example 1
As shown in figure 1, using traditional table top vertical electrode structures of p-i-n half, the device is prepared in n-type SiC substrate material
On.The basic composition part of device includes successively from top to bottom：N-type SiC conductive substrates, n-contact layer, i type SiC avalanche layers, p
Type SiC transition zones and p+ type SiC contact layers；Table top only needs to etch into below p-type transition zone, and table top bottom is in i type SiC snowslides
On layer.Lower Metal contact electrode is covered in n-type SiC conductive substrates, and upper Metal contact electrode is on p+ type SiC contact layers.
Comparative example 2
As shown in Fig. 2 using traditional n-i-p full courts facial plane electrode structure, the device is prepared in n-type SiC substrate material
On.The basic composition part of device from top to bottom according to including：N-type SiC conductive substrates, p-type SiC transition zones, i type SiC avalanche layers,
N-type SiC transition zones and n+ type SiC contact layers；Table top need to be etched into below i type avalanche layers, and table top bottom is in p-type SiC contacts
In layer.Lower Metal contact electrode is on p-type SiC transition zones, and upper Metal contact electrode is on n+ type SiC contact layers.
Above-mentioned Fig. 1 show the structural representation of traditional table top vertical electrode SiC APD devices of p-i-n half in comparative example 1,
Each layer doping concentration, thickness, mesa etch depth and the Metal contact electrode position of the device and the new n-i-p-n in Fig. 3
Half table top vertical electrode SiC APD are identical, and step of preparation process is also essentially identical, and different is the doping type of each layer；
Above-mentioned Fig. 3 show the new n-i-p-n half table top vertical electrode SiC APD device corresponding with Fig. 2 device architectures
The structural representation of part, the epitaxial structure of the device is identical with Fig. 2, the table top vertical electrode SiC of n-i-p-n half in Fig. 3
APD each layer doping concentration and thickness is identical with the n-i-p full court facial plane electrode SiC APD in Fig. 2, preparation technology step
It is rapid also essentially identical, except that mesa etch depth and lower Metal contact electrode position.
SiC APD preparation technologies shown in Fig. 1-3 include：Each layer grows successively on substrate, inclined table etching, n-type
Prepared with p-type Ohm contact electrode, surface passivation.The preparation of inclined table is to be based on Photoresist reflow and dry etch process；
Fig. 2 is traditional n-i-p full courts facial plane electrode structure device, and its land depth needs to reach below i type SiC avalanche layers, is implemented
Example 1-3 table tops base angle is 30 °；Upper electrode metal ohmic contact layer and bottom electrode metal ohmic contact layer, by being deposited or splashing
Penetrate technique and be deposited on n+ type SiC ohmic contact layer surfaces and p-type SiC ohmic contact layer surface respectively, by high annealing work
Skill is formed.
The device of comparison diagram 3 and Fig. 1 device architectures, the table top vertical electrode SiC APD of n-i-p-n half of hole injection are than electricity
The table top vertical electrode SiC AP of traditional p-i-n half of son injection operating efficiency is higher；In addition, the upper metal electrode of Fig. 3 devices
Using n-type Ohmic contact, metal electrode p-type Ohmic contact quality is improved on Fig. 1 tradition p-i-n devices to a certain extent not
The problem of high.
The device of comparison diagram 3 and Fig. 2 device architectures, it is evident that half table top SiC APD structures have smaller etching depth, can
The problem of to overcome full mesa structure etching injury bigger than normal to a certain extent；In addition, the lower metal electrode of Fig. 3 devices uses n
Type Ohmic contact, the lower metal electrode p-type Ohmic contact for improving Fig. 2 tradition n-i-p devices to a certain extent are of low quality
The problem of.
The concrete structure parameter setting of Fig. 1 devices is as follows：The doping concentration 5 × 10 of n-type SiC conductive substrates18cm-3, thickness
300μm；The doping concentration 3 × 10 of n-type SiC transition zones18cm-3, 0.5 μm of thickness, the doping concentrations 1 of i type SiC avalanche layers ×
1015cm-3, 0.6 μm of thickness；The doping concentration 2 × 10 of p-type SiC transition zones18cm-3, 0.2 μm of thickness；P+ type SiC ohmic contact layers
Doping concentration 2 × 1019cm-3, 0.2 μm of thickness；The surface passivation layer of device is the silica that thickness is 1.0 μm；Detector
N-type contact electrode (lower Metal contact electrode) and p-type contact electrode (go up Metal contact electrode) be that Ni/Au (including connects
Ni layers and Au layers) alloy electrode：Ni/Au is 35/100nm (thickness for referring to Ni layers is 35nm, and the thickness of Au layers is 100nm),
The Ni layers of upper Metal contact electrode connect with p+ type SiC contact layers, Ni layers and the n-type conductive SiC substrates of lower Metal contact electrode
Connect.
The concrete structure parameter setting of Fig. 2 devices is as follows：The doping concentration 5 × 10 of n-type SiC conductive substrates18cm-3, thickness
300μm；The doping concentration 3 × 10 of p-type SiC transition zones18cm-3, 0.5 μm of thickness, the doping concentrations 1 of i type SiC avalanche layers ×
1015cm-3, 0.6 μm of thickness；The doping concentration 2 × 10 of n-type SiC transition zones18cm-3, 0.2 μm of thickness；N+ type SiC ohmic contact layers
Doping concentration 2 × 1019cm-3, 0.2 μm of thickness；The surface passivation layer of device is the silica that thickness is 1.0 μm；Upper metal
It is Ni/Au alloy electrodes to contact electrode and lower Metal contact electrode：Ni/Au is 35/100nm, the Ni of upper Metal contact electrode
Layer connects with n+ type SiC contact layers, and the Ni layers of lower Metal contact electrode connect with n-type conductive SiC substrates.
The concrete structure parameter setting of Fig. 3 devices is as follows：The doping concentration 5 × 10 of n-type SiC conductive substrates18cm-3, thickness
300μm；The doping concentration 3 × 10 of p-type SiC transition zones18cm-3, 0.5 μm of thickness, the doping concentrations 1 of i type SiC avalanche layers ×
1015cm-3, 0.6 μm of thickness；The doping concentration 2 × 10 of n-type SiC transition zones18cm-3, 0.2 μm of thickness；N+ type SiC ohmic contact layers
2 × 1019cm of doping concentration-3, 0.2 μm of thickness；The surface passivation layer of device is the silica that thickness is 1.0 μm；Detector
N-type contact electrode (upper and lower Metal contact electrode) be Ni/Au alloy electrodes：Ni/Au is 35/100nm, upper metal contact electricity
The Ni layers of pole connect with n+ type SiC contact layers, and the Ni layers of lower Metal contact electrode connect with n-type conductive SiC substrates.
Fig. 4 is the n-i-p full courts facial plane electrode traditional under high reverse bias voltages being calculated using device modeling software
The inside field intensity map of structure (Fig. 1), wherein left figure are the section two-dimensional distribution of field strength change, and right figure is along n+ contact layers
Field strength change curve onto n-type conductive substrates vertical direction.Mesa etch depth is 1.1 μm, has been deep into p-type SiC mistakes
Cross layer.
Fig. 5 is that the table tops of n-i-p-n half new under high reverse bias voltages being calculated using device modeling software are vertically electric
Pole SiC APD (Fig. 3) inside field intensity map, wherein left figure are the section two-dimensional distribution of field strength change, and right figure is along n+
Field strength change curve on contact layer to n-type conductive substrates vertical direction.Mesa etch depth is 0.5 μm, has just reached i types
The upper epidermis of SiC avalanche layers.
From the point of view of comparison diagram 4 and Fig. 5 Electric Field Distribution analog result, in the case of reverse biased 180V, two kinds of SiC APD
Field strength distribution in device is essentially identical, and maximum field strength is respectively positioned at i type SiC avalanche layers.Because the new table tops of n-i-p-n half hang down
Contacted with each other between straight electrode SiC APD p-type SiC contact layers and n-type conductive substrates, be heavily doped so that exhausting between two layers
Area is very narrow, forms tunnel knot.The presence of tunnel knot makes half table top vertical electrode SiC APD in P type contact layer and n-type conductive liner
Bottom intersection a faint electric field spike, width of depletion region more than the full court facial plane electrode structure SiC APD are about 0.15 μ
M, peak electric field are about 0.6MV/cm.
Fig. 6 is the table top vertical electrode SiC APD and n-i-p full court facial plane electrode structure SiC APD of n-i-p-n half electricity
Stream-voltage (IV) curve comparison figure.As a result show, the positive opening feature of two kinds of devices is basically identical；Dark current before snowslide
Magnitude and avalanche voltage are also basically identical.Tunnel knot in half table top vertical electrode SiC APD of this explanation is basic to its IV characteristic
Do not influence.
Fig. 7 is the table top vertical electrode SiC APD and n-i-p full court facial plane electrode structure SiC APD of n-i-p-n half IV
Spectral response comparison diagram, the peak in the spectral response of two kinds of devices is in 295nm, respectively 0.122A/W and 0.125A/W；It is ultraviolet
Light/visible ray (295nm/400nm) rejection ratio is 300 or so.It can be seen that the tunnel knot pair in half table top vertical electrode SiC APD
Its spectral response characteristic does not also influence substantially.
Fig. 8 is the table top vertical electrode SiC APD and p-i-n full court facial plane electrode structure SiC APD of n-i-p-n half increasing
Beneficial comparison diagram, a length of 254nm of incident light wave.The ratio between impact ionization coefficient of hole and electronics is about 50 in 4H-SiC materials：1,
Therefore the device of hole injection has higher gain, namely higher operating efficiency than the device of electron injection.When being operated in
When under linear model, n-i-p-n vertical electrode SiC APD operating efficiency is than traditional p-i-n planar electrode structures SiC APD most
Improve 130% or so greatly.
Full court facial plane electrode structure (Fig. 2) and the etching depth of half table top vertical electrode structure (Fig. 3) are respectively 0.5 μm
With 1.1 μm, that is to say, that：After employing the table top vertical electrode structures of new n-i-p-n half proposed by the invention, ensureing IV
In the case that characteristic, spectral response characteristic, device inside field strength are constant, relative to n-i-p full court facial plane electrode structural designs,
Etching depth reduces 55%, and i type avalanche layers are thicker, and etching depth decrement is bigger；In addition, the new table tops of n-i-p-n half
Vertical electrode structure further improves the Ohmic contact of lower metal electrode, avoids high using price and not yet commercialized p-type
Silicon carbide substrates, reduce extraction wire quantity, saved device cost.
Embodiment 2
It is substantially the same manner as Example 1, except that：The n-type contact electrode (lower Metal contact electrode) and p-type of detector
It is the sandwich construction based on W metal and Au to contact electrode (upper Metal contact electrode)：Ni/Ti/Al/Au35/50/200/
100nm, the Ni layers of upper Metal contact electrode connect with n+ type SiC contact layers, and the Ni layers and n-type of lower Metal contact electrode are conductive
SiC substrate connects.Compared with simple Ni/Au alloy electrodes, Ni/Ti/Al/Au combination electrodes have more preferable Ohmic contact matter
Amount, smaller specific contact resistivity and lower reverse leakage current.
Claims (9)
- A kind of 1. carbonization avalanche silicon diode of the table top vertical electrode structures of new n-i-p-n half, it is characterised in that：For n-i-p- N structures；The carbonization avalanche silicon diode of the new table top vertical electrode structures of n-i-p-n half includes successively from top to bottom：Lower metal Contact electrode, n-type conductive SiC substrates, p-type SiC contact layers, i type SiC avalanche layers, n-type SiC transition zones, n+ type SiC contact layers With upper Metal contact electrode, wherein, n-type SiC transition zones and n+ type SiC contact layers form lower small mesa shaped upper greatly, n-type SiC The lower surface area of transition zone is less than i type SiC avalanche layer upper surface areas, the periphery of n-type SiC transition zones, n+ type SiC contact layers Periphery and the upper surface of i type SiC avalanche layers by the covering of n-type SiC transition zones is not equipped with passivation layer.
- 2. the carbonization avalanche silicon diode of the new table top vertical electrode structures of n-i-p-n half as claimed in claim 1, its feature It is：The thickness of upper and lower Metal contact electrode is 0.1-10 μm.
- 3. the carbonization avalanche silicon diode of the new table top vertical electrode structures of n-i-p-n half as claimed in claim 1 or 2, its It is characterised by：The thickness of n-type conductive SiC substrates is 50-500 μm；The thickness of p-type SiC contact layers is 1-20 μm；I type SiC avalanche layers Thickness be 0.2-2 μm；The thickness of n-type SiC transition zones is 0.1-0.5 μm；The thickness of n+ type SiC contact layers is 0.1-0.5 μm.
- 4. the carbonization avalanche silicon diode of the new table top vertical electrode structures of n-i-p-n half as claimed in claim 1 or 2, its It is characterised by：The base angle of table top is less than 45 °.
- 5. the carbonization avalanche silicon diode of the new table top vertical electrode structures of n-i-p-n half as claimed in claim 1 or 2, its It is characterised by：The structure of upper and lower Metal contact electrode is identical, includes what is connected successively：Ni layers, Ti layers, Al layers and Au layers；On The Ni layers of Metal contact electrode connect with n+ type SiC contact layers, Ni layers and the n-type conductive SiC substrates phase of lower Metal contact electrode Connect.
- 6. the pole of carborundum snowslide two of the table top vertical electrode structures of new n-i-p-n half belonging to claim 1-5 any one The preparation method of pipe, it is characterised in that：Epitaxial growth p-type SiC contact layers, the i type SiC snowslides successively on n-type conductive SiC substrates Layer, n-type SiC transition zones and n+ type SiC contact layers, then using Photoresist reflow and plasma dry etching method by upper To lower formation inclined table, inclined table, which only etches, reaches i type SiC avalanche layers；Then the surface after etching is passivated Processing, form passivation layer；The preparation of upper and lower Metal contact electrode is finally completed, wherein, upper Metal contact electrode is located at n+ types The top of SiC contact layers, lower Metal contact electrode are located at the bottom of n-type conductive SiC substrates；The material of upper and lower Metal contact electrode Material includes at least one of titanium, aluminium, nickel, gold or platinum.
- 7. method as claimed in claim 6, it is characterised in that：The average doping concentration of p-type SiC contact layers is between 2 × 1017/ cm-3-3×1019/cm-3Between；The average doping concentration of i type SiC avalanche layers is between 2 × 1012/cm-3-1×1017/cm-3Between； The average doping concentration of n-type SiC transition zones is between 2 × 1017/cm-3-1×1019/cm-3Between；N+ type SiC contact layers are averaged Doping concentration is more than the average doping concentration of n-type SiC transition zones.
- 8. the method described in claim 6 or 7, it is characterised in that：The average disruptive field intensity of material is big used by passivation layer In 5MV/cm.
- 9. the method described in claim 6 or 7, it is characterised in that：Material includes SiO used by passivation layer2、Si3N4Or SiNx At least one of.
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