CN109244175A - A kind of note Al ion avalanche photodiode and preparation method thereof - Google Patents
A kind of note Al ion avalanche photodiode and preparation method thereof Download PDFInfo
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- CN109244175A CN109244175A CN201810905078.6A CN201810905078A CN109244175A CN 109244175 A CN109244175 A CN 109244175A CN 201810905078 A CN201810905078 A CN 201810905078A CN 109244175 A CN109244175 A CN 109244175A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000010410 layer Substances 0.000 claims abstract description 64
- 230000007704 transition Effects 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000000137 annealing Methods 0.000 claims abstract description 15
- 239000011241 protective layer Substances 0.000 claims abstract description 15
- 238000002347 injection Methods 0.000 claims abstract description 7
- 239000007924 injection Substances 0.000 claims abstract description 7
- 230000008439 repair process Effects 0.000 claims abstract description 5
- 230000004913 activation Effects 0.000 claims abstract description 4
- 230000001771 impaired effect Effects 0.000 claims abstract description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 230000002045 lasting effect Effects 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 abstract description 5
- 230000003446 memory effect Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract 5
- 230000000694 effects Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- KBPHJBAIARWVSC-RGZFRNHPSA-N lutein Chemical compound C([C@H](O)CC=1C)C(C)(C)C=1\C=C\C(\C)=C\C=C\C(\C)=C\C=C\C=C(/C)\C=C\C=C(/C)\C=C\[C@H]1C(C)=C[C@H](O)CC1(C)C KBPHJBAIARWVSC-RGZFRNHPSA-N 0.000 description 1
- 229960005375 lutein Drugs 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- KBPHJBAIARWVSC-XQIHNALSSA-N trans-lutein Natural products CC(=C/C=C/C=C(C)/C=C/C=C(C)/C=C/C1=C(C)CC(O)CC1(C)C)C=CC=C(/C)C=CC2C(=CC(O)CC2(C)C)C KBPHJBAIARWVSC-XQIHNALSSA-N 0.000 description 1
- FJHBOVDFOQMZRV-XQIHNALSSA-N xanthophyll Natural products CC(=C/C=C/C=C(C)/C=C/C=C(C)/C=C/C1=C(C)CC(O)CC1(C)C)C=CC=C(/C)C=CC2C=C(C)C(O)CC2(C)C FJHBOVDFOQMZRV-XQIHNALSSA-N 0.000 description 1
- 235000008210 xanthophylls Nutrition 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only AIVBIV alloys, e.g. SiGe
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Abstract
The invention discloses a kind of note Al ion avalanche photodiodes and preparation method thereof, and infusing Al ion avalanche photodiode includes: n+SiC substrate, n‑SiC epitaxial layer, p-type transition zone, p+Ohmic contact layer, protective layer, n-type electrode, p-type electrode, note Al ion avalanche photodiode preparation method include: production n‑SiC epitaxial layer, production p+Ohmic contact layer, production p-type transition zone, annealing activation repair, make mesa structure, production protective layer, production electrode, device annealing.The present invention mainly solves the problems, such as that SiC epitaxy technique complexity, p-type layer extension cause memory effect, passes through injection Al ion and forms p-type transition zone and p+Ohmic contact layer, avoid the memory effect of epitaxial growth, Al ion is activated using annealing and repairs impaired lattice and then improves device performance, provides that a kind of high reliablity, more sensitive, performance is more superior, epitaxy technique simply infuses Al ion avalanche photodiode and preparation method thereof.
Description
Technical field
The present invention relates to light-sensitive element technical fields, more particularly to note Al ion avalanche photodiode and its preparation side
Method.
Background technique
Avalanche photodide is to will increase its internal electron liveness under particular light based on certain semiconductors, is generated
Photoelectric current, and then the photoelectric effect that reduces its resistance and the light-sensitive element that makes.P-N junction in avalanche photodide is one
Determine that avalanche effect can occur under the reverse biased effect of intensity, so that photo-current intensity rises suddenly and sharply.
With the continuous research and development of the relevant technologies for many years, avalanche photodide has also obtained long-range development.Mesh
It is preceding based on SiC base avalanche photodide, there are the similar products of many different structures, in addition to traditional pn-junction avalanche optoelectronic
Diode, there are also punch avalanche photodide, the avalanche photodides for separating absorbed layer with dynode layer etc., due to it
The advantages that high sensitivity, high gain, fast response time, a variety of different structure avalanche photodides are in laser ranging, confocal
Microscope, videoscanning imaging, communication, temperature sensor etc. are multi-field to be used widely, and its application field still after
It is continuous to open up extensively, there is very ideal development prospect.
Current existing avalanche photodide superior performance is widely used, prospect ideal, various structures, but it still has
Develop improved space.No matter the avalanche photodide of which kind of structure, the preparation of p-type layer requires by epitaxial growth,
But it will form adverse effect in the more complicated and epitaxial growth in n-layer of this process, that is to say memory effect, this will affect
To the overall performance of entire device, the memory effect of p-type layer is the generally existing common defects of current avalanche photodide.
Summary of the invention
The problem of complicated, p-type layer extension that present invention aim to address SiC epitaxy techniques causes memory effect, provide one
Kind high reliablity, more sensitive, performance is more superior, epitaxy technique simply infuses Al ion avalanche photodiode and its preparation side
Method.
A kind of the technical solution adopted in the present invention: note Al ion avalanche photodiode, comprising: n+SiC substrate, n-SiC
Epitaxial layer, p-type transition zone, p+Ohmic contact layer, protective layer, n-type electrode, p-type electrode, the n+SiC substrate and n-SiC extension
The epitaxial structure of avalanche photodide is collectively formed in layer；The p-type transition zone and p+Snowslide light is collectively formed in ohmic contact layer
The p-type layer of electric diode；The n+SiC substrate is located at the bottommost of device；The n-SiC epitaxial layer is located at n+In SiC substrate,
It is 1 μm thick, Al ion unit volume doping concentration NDIt is 1 × 1015cm-3；The p-type transition zone is located at n-It is thick in SiC epitaxial layer
It 0.29 μm, is infused Al ion processes and is formed, Al ion unit volume doping concentration is 1 × 1017cm-3To 7 × 1017cm-3；The p+Ohmic contact layer is located on p-type transition zone, 0.07 μm thick, is infused Al ion processes and is formed, Al ion unit volume doping concentration
It is 1 × 1019cm-3；The protective layer is SiO2Layer, be located at device exterior, other regions of covering device upper surface in addition to electrode,
Thick 200nm；The n-type electrode is ring-type, is located at n+Above SiC substrate edge；The p-type electrode is located at p+On ohmic contact layer.
The present invention the preparation method is as follows:
Make n-SiC epitaxial layer: in n+By being epitaxially-formed n on SiC substrate-SiC epitaxial layer.
Make p+Ohmic contact layer: different-energy, various dose injection, energy and dosage twice are respectively in two times
15keV and 2 × 1013ions/cm2, 55keV and 1 × 1014ions/cm2, injection temperature is 500 DEG C.
Make p-type transition zone: again at 500 DEG C, with energy 200keV and dosage 1 × 1013ions/cm2Inject Al from
Son.
Annealing activation is repaired: being completed Al ion implanting, is being formed p+After ohmic contact layer and p-type transition zone, to activate Al
Ion simultaneously repairs impaired lattice, first layer protecting film is deposited in surface of SiC, with 1600 DEG C of progress 30min annealing.
It makes mesa structure: forming 4.08 degree of mesa structure by inductively coupled plasma etching system dry method.
Make protective layer: by gas-phase deposition system, by avalanche photodide at 1100 DEG C dry-oxygen oxidation, then again
Deposit forms SiO2Protective layer.
Make electrode: forming electrode interface using photoetching and wet etching, deposited by electron beam evaporation to be formed p-type with
N-type electrode.
Device annealing: entire device carries out lasting annealing in 3 minutes under 850 DEG C of pure nitrogen gas environment.
Beneficial effects of the present invention: (1) SiC epitaxy technique is simplified；(2) p-type layer epitaxial growth bring note is eliminated
Recall effect；(3) dark purple outskirt quantum efficiency is high, and UV, visible light Xanthophyll cycle is detected than high suitable for faint ultraviolet signal；(4)
Avalanche gain is more preferable.
Detailed description of the invention
Fig. 1 is the schematic diagram of the section structure of the present invention.
Fig. 2 is overlooking structure diagram of the present invention.
In figure: 1-n+SiC substrate, 2-n-SiC epitaxial layer, 3-p-type transition zones, 4-p+Ohmic contact layer, 5-protections
Layer, 6-n-type electrodes, 7-p-type electrodes.
Specific embodiment
The present invention is described in detail with specific example with reference to the accompanying drawing.
As shown in Figure 1 or 2, the inventive system comprises n+SiC substrate (1), n-SiC epitaxial layer (2), p-type transition zone
(3)、p+Ohmic contact layer (4), protective layer (5), n-type electrode (6), p-type electrode (7), the n+SiC substrate (1) and n-Outside SiC
Prolong the epitaxial structure that avalanche photodide is collectively formed in layer (2)；The p-type transition zone (3) and p+Ohmic contact layer (4) is common
Form the p-type layer of avalanche photodide；The n+SiC substrate (1) is located at the bottommost of device；The n-SiC epitaxial layer (2)
Positioned at n+It is 1 μm thick in SiC substrate (1), the doping concentration N in Al ion unit volumeDIt is 1 × 1015cm-3；The p-type transition
Layer (3) is located at n-It is 0.29 μm thick in SiC epitaxial layer (2), it is infused Al ion processes and is formed, the doping in Al ion unit volume
Concentration is 1 × 1017cm-3To 7 × 1017cm-3；The p+Ohmic contact layer (4) is located on p-type transition zone (3), 0.07 μm thick, warp
Note Al ion processes are formed, and the doping concentration in Al ion unit volume is 1 × 1019cm-3；The protective layer (5) is SiO2Layer,
Positioned at device exterior, other regions of covering device upper surface in addition to n-type electrode (6) and p-type electrode (7), thick 200nm；The n
Type electrode (6) is ring-type, is located at n+Above SiC substrate (1) edge；The p-type electrode (7) is located at p+On ohmic contact layer (4).
Make n-SiC epitaxial layer (2): in n+By being epitaxially-formed n on SiC substrate (1)-SiC epitaxial layer (2).
Make p+Ohmic contact layer (4): different-energy, various dose injection in two times, energy and dosage difference twice
For 15keV and 2 × 1013ions/cm2, 55keV and 1 × 1014ions/cm2, injection temperature is 500 DEG C.
It makes p-type transition zone (3): again at 500 DEG C, with energy 200keV and dosage 1 × 1013ions/cm2Inject Al
Ion.
Annealing activation is repaired: being completed Al ion implanting, is being formed p+After ohmic contact layer (4) and p-type transition zone (3), it is
It activates Al ion and repairs impaired lattice, first layer protecting film is deposited in surface of SiC, with 1600 DEG C of progress 30min annealing.
It makes mesa structure: forming 4.08 degree of mesa structure by inductively coupled plasma etching system dry method.
Make protective layer (5): by gas-phase deposition system, by avalanche photodide at 1100 DEG C dry-oxygen oxidation, so
It deposits to form SiO again afterwards2Protective layer (5).
It makes electrode: forming electrode interface using photoetching and wet etching, to form p-type electricity depositing by electron beam evaporation
Pole (7) and n-type electrode (6).
Device annealing: entire device carries out lasting annealing in 3 minutes under 850 DEG C of pure nitrogen gas environment.
Claims (8)
1. a kind of note Al ion avalanche photodiode, comprising: n+SiC substrate (1), n-SiC epitaxial layer (2), p-type transition zone
(3)、p+Ohmic contact layer (4), protective layer (5), n-type electrode (6), p-type electrode (7), which is characterized in that the n+SiC substrate
(1) it is located at the bottommost of device；The n-SiC epitaxial layer (2) is located at n+In SiC substrate (1)；The p-type transition zone (3) is located at
n-In SiC epitaxial layer (2)；The p+Ohmic contact layer (4) is located on p-type transition zone (3)；The protective layer (5) is SiO2Layer,
Positioned at device exterior, other regions of covering device upper surface in addition to n-type electrode (6) and p-type electrode (7)；The n-type electrode
(6) it is ring-type, is located at n+Above SiC substrate (1) edge；The p-type electrode (7) is located at p+On ohmic contact layer (4).
2. a kind of note Al ion avalanche photodiode as described in claim 1, which is characterized in that the n+SiC substrate (1)
And n-The epitaxial structure of avalanche photodide is collectively formed in SiC epitaxial layer (2).
3. a kind of note Al ion avalanche photodiode as described in claim 1, which is characterized in that the p-type transition zone (3)
And p+The p-type layer of avalanche photodide is collectively formed in ohmic contact layer (4).
4. a kind of note Al ion avalanche photodiode as described in claim 1, which is characterized in that the n-SiC epitaxial layer
(2) 1 μm thick, in Al ion unit volume doping concentration NDIt is 1 × 1015cm-3。
5. a kind of note Al ion avalanche photodiode as described in claim 1, which is characterized in that the p-type transition zone (3)
0.29 μm thick, the doping concentration in Al ion unit volume is 1 × 1017cm-3To 7 × 1017cm-3。
6. a kind of note Al ion avalanche photodiode as described in claim 1, which is characterized in that the p+Ohmic contact layer
(4) 0.07 μm thick, the doping concentration in Al ion unit volume is 1 × 1019cm-3。
7. a kind of note Al ion avalanche photodiode as described in claim 1, which is characterized in that the protective layer (5) is thick
200nm。
8. a kind of note Al ion avalanche photodiode preparation method, it is characterised in that:
Make n-SiC epitaxial layer (2): in n+By being epitaxially-formed n on SiC substrate (1)-SiC epitaxial layer (2)；
Make p+Ohmic contact layer (4): different-energy, various dose injection, energy and dosage twice are respectively in two times
15keV and 2 × 1013ions/cm2, 55keV and 1 × 1014ions/cm2, injection temperature is 500 DEG C；
It makes p-type transition zone (3): again at 500 DEG C, with energy 200keV and dosage 1 × 1013ions/cm2Inject Al from
Son；
Annealing activation is repaired: being completed Al ion implanting, is being formed p+After ohmic contact layer (4) and p-type transition zone (3), to activate Al
Ion simultaneously repairs impaired lattice, first layer protecting film is deposited in surface of SiC, with 1600 DEG C of progress 30min annealing；
It makes mesa structure: forming 4.08 degree of mesa structure by inductively coupled plasma etching system dry method；
Make protective layer (5): by gas-phase deposition system, by avalanche photodide at 1100 DEG C dry-oxygen oxidation, then again
Deposit forms SiO2Protective layer (5)；
It makes electrode: forming electrode interface using photoetching and wet etching, depositing to form p-type electrode by electron beam evaporation
(7) and n-type electrode (6)；
Device annealing: entire device carries out lasting annealing in 3 minutes under 850 DEG C of pure nitrogen gas environment.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810905078.6A CN109244175A (en) | 2018-08-09 | 2018-08-09 | A kind of note Al ion avalanche photodiode and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810905078.6A CN109244175A (en) | 2018-08-09 | 2018-08-09 | A kind of note Al ion avalanche photodiode and preparation method thereof |
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| CN109244175A true CN109244175A (en) | 2019-01-18 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1988185A (en) * | 2006-12-20 | 2007-06-27 | 厦门大学 | 4H-SiC avalanche photodetector and its preparing method |
| JP2014032994A (en) * | 2012-08-01 | 2014-02-20 | Nippon Telegr & Teleph Corp <Ntt> | Avalanche photodiode and method for manufacturing the same |
| CN104882510A (en) * | 2015-06-04 | 2015-09-02 | 镇江镓芯光电科技有限公司 | Silicon carbide avalanche photodiode with novel small-dip-angle half mesa structure |
| US20160315211A1 (en) * | 2015-02-20 | 2016-10-27 | University Of South Carolina | OPTICALLY SWITCHED GRAPHENE/4H-SiC JUNCTION BIPOLAR TRANSISTOR |
| CN106653932A (en) * | 2016-12-27 | 2017-05-10 | 北京世纪金光半导体有限公司 | SiC avalanche photodiode and fabrication method thereof |
| CN107611193A (en) * | 2017-09-07 | 2018-01-19 | 南京大学 | A kind of carbonization avalanche silicon diode of the new table top vertical stratifications of n i p n half and preparation method thereof |
-
2018
- 2018-08-09 CN CN201810905078.6A patent/CN109244175A/en not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1988185A (en) * | 2006-12-20 | 2007-06-27 | 厦门大学 | 4H-SiC avalanche photodetector and its preparing method |
| JP2014032994A (en) * | 2012-08-01 | 2014-02-20 | Nippon Telegr & Teleph Corp <Ntt> | Avalanche photodiode and method for manufacturing the same |
| US20160315211A1 (en) * | 2015-02-20 | 2016-10-27 | University Of South Carolina | OPTICALLY SWITCHED GRAPHENE/4H-SiC JUNCTION BIPOLAR TRANSISTOR |
| CN104882510A (en) * | 2015-06-04 | 2015-09-02 | 镇江镓芯光电科技有限公司 | Silicon carbide avalanche photodiode with novel small-dip-angle half mesa structure |
| CN106653932A (en) * | 2016-12-27 | 2017-05-10 | 北京世纪金光半导体有限公司 | SiC avalanche photodiode and fabrication method thereof |
| CN107611193A (en) * | 2017-09-07 | 2018-01-19 | 南京大学 | A kind of carbonization avalanche silicon diode of the new table top vertical stratifications of n i p n half and preparation method thereof |
Non-Patent Citations (1)
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| 张玉龙: "《半导体材料技术》", 浙江科学技术出版社, pages: 173 * |
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Application publication date: 20190118 |