CN106847933A - Ultraviolet infrared double color avalanche photodide of single-chip integration and preparation method thereof - Google Patents
Ultraviolet infrared double color avalanche photodide of single-chip integration and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66219—Diodes with a heterojunction, e.g. resonant tunneling diodes [RTD]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to semiconductor photo detector field, there is provided ultraviolet infrared double color avalanche photodide of a kind of single-chip integration and preparation method thereof, the diode structure includes bottom electrode contact layer, intrinsic dynode layer, charge layer, periodicity heterojunction structure absorbed layer and Top electrode contact layer；Periodicity heterojunction structure absorbed layer is formed by two kinds of material alternating growths, and quantum limitation effect is formed along Material growth direction, and transition corresponds to the absorption of infrared photon between sub-band energy level in conduction band, and the band-to-band transition of valence band to conduction band corresponds to the absorption of ultraviolet photon.The light induced electron produced in absorbed layer can be moved to collide in intrinsic dynode layer ionization, while realizing the snowslide detection of two waveband.
Description
Technical field
The present invention relates to field of photodetectors, and in particular to a kind of single-chip integration ultraviolet-infrared bichromatic avalanche optoelectronic two
Pole pipe and preparation method thereof.
Background technology
Dual-color detection, or even multi-color detection is one of Main way of future probes technology development, and it is in weather monitoring, fire
There is significant application value in the civil and military such as calamity early warning, missile guidance field.The detection mode of single wavelength is easily carried on the back
Scape radiation, interference signal etc. influence, if detector can simultaneously have the standalone probe ability of ultraviolet-infrared dual band, can
To greatly increase reliability, robustness and the accuracy of detection.Especially, in some complex application contexts, detector is reached
Optical signal it is very faint, this requires that detector can wish detector while have responsiveness higher in two wave bands
Gain mode can be worked in.
Photomultiplier（PMT）There is high gain and low noise in ultraviolet band, but to infrared band hardly
Response, and have the shortcomings that volume is big, brittle relative to semiconductor detector.
At present, in semiconductor gain type detector, silicon substrate avalanche photodide is most widely used, but by silicon material
Expect the restriction of energy gap, it is on the one hand easily aging under ultraviolet light, on the one hand it is longer than wavelength the light wave base of 1100 nm
Originally it is not responding to, nor preferably ultraviolet-infrared bichromatic avalanche probe part.
GaN base semiconductor material with wide forbidden band physics and chemical property are highly stable, and its energy gap is just in ultraviolet waves
It is the material of ideal making ultraviolet detector near section.In addition, with the progress of material epitaxy technology, hetero-junctions
The successful preparation of material structure makes it possible that nitride material detects infrared waves.Therefore, sent out using nitride material
Exhibition single-chip integration ultraviolet-infrared bichromatic Detection Techniques are current study hotspots.Existing GaN base ultraviolet-infrared bichromatic detection
Device is mainly based upon body material band-to-band transition（Ultraviolet detection）The interior photoelectron emissions with rank with conduction band（Infrared acquisition）Or son
Band energy level transition（Infrared acquisition）The photoconductive mode being combined, its operation principle limits device and can not work in snowslide detection
Pattern.In traditional GaN base absorbs multiplication separate type avalanche photodide, uptake zone uses body material, is merely able to purple
Outer light produces response.Therefore, if changing the body material of uptake zone into periodicity heterojunction material structure, realized using band-to-band transition
Detection to ultraviolet light, infrared light detecting is realized using transition between sub-band energy level in conduction band, then can be realized simultaneously ultraviolet-infrared double
The snowslide detection of wave band.
The content of the invention
The invention provides a kind of single-chip integration ultraviolet-infrared bichromatic avalanche photodide and preparation method thereof, solve
The problem of two waveband snowslide detection can not be simultaneously realized in current single-chip integration dual-color detection device, can be effectively ensured at two
Wave band has responsiveness high.
Technical scheme is as follows：
Single-chip integration ultraviolet-infrared bichromatic avalanche photodide, it is characterised in that include from bottom to top：Substrate, cushion,
Bottom electrode contact layer, intrinsic dynode layer, charge layer, periodicity heterojunction structure absorbed layer and Top electrode contact layer.
The substrate can be sapphire（Al2O3）, gallium nitride（GaN）, aluminium nitride（AlN）, carborundum（SiC）, silicon
（Si）, zinc oxide（ZnO）Deng any one in material, for material for detector structure growth.
The buffer growth in substrate, then successively growth bottom electrode contact layer, intrinsic dynode layer, charge layer and
Top electrode contact layer, the material selected by the cushion, bottom electrode contact layer, intrinsic dynode layer, charge layer and Top electrode contact layer
Expect to be aluminum gallium nitride（AlGaN）, indium gallium nitrogen（InGaN）, indium aluminium nitrogen（InAlN）, aluminium gallium nitrogen（InAlGaN）, carborundum（SiC）In
One kind or not of the same race.
The thickness of the cushion is 0.01 μm to 10 μm, the quality for improving growth material.
The N-shaped doping concentration of the bottom electrode contact layer is 1 × 1017 cm-3To 5 × 1019 cm-3Between, thickness is 0.1
μm to 10 μm, for making N-shaped Ohm contact electrode；
The thickness of the intrinsic dynode layer is 0.05 μm to 1.0 μm, is the region that photo-generated carrier occurs avalanche multiplication；
The p-type doping concentration of the charge layer is 1 × 1017 cm-3To 1 × 1019 cm-3Between, thickness is 0.01 μm to 0.15
μm, for the regulation of absorbed layer and dynode layer electric field；
The periodicity heterojunction structure absorbed layer uses AlxGa1-xN/AlyGa1-yN materials system, or use InyGa1-yN/
InxGa1-xN, InGaN/AlGaN material system, wherein 0≤x<Y≤1, forms SQW or superlattices that periodicity is 1 to 500
Structure, transition of the electronics from conduction band ground state level to excited level corresponds to the absorption of infrared photon, from valence band to conduction band
Transition corresponds to the absorption of ultraviolet photon.AlxGa1-xN or InyGa1-yN materials N-shaped adulterates, and doping concentration is 5 × 1017cm-3To 5
×1019 cm-3Between, thickness is 0.001 μm to 0.02 μm, AlyGa1-yN or InxGa1-xN thickness is 0.001 μm to 0.02
µm；
The Al that the Top electrode contact layer is adulterated using p-typezGa1-zN, 0≤z≤1, doping concentration is 1 × 1017 cm-3To 1 ×
1019 cm-3Between, thickness is 0.05 μm to 0.2 μm, for making p-type Ohm contact electrode.
The method for preparing single-chip integration ultraviolet-infrared bichromatic avalanche photodide, its step is as follows：
（1）In Grown cushion；
（2）Bottom electrode contact layer is grown on the buffer layer；
（3）Intrinsic dynode layer is grown on bottom electrode contact layer；
（4）Charge layer is grown on intrinsic dynode layer；
（5）The growth periodicity heterojunction structure absorbed layer on charge layer；
（6）Top electrode contact layer is grown on periodicity heterojunction structure absorbed layer；
（7）N-shaped Ohm contact electrode is made on bottom electrode contact layer, p-type Ohmic contact is made on Top electrode contact layer
Electrode, forms bipolar electrode control device, or, another p-type Ohm contact electrode is increased on charge layer and forms three electrode controls
Device processed；
（8）In order to realize the coupling near infrared light, by the substrate one side bevel of the device after completing or
One-dimensional grating or two-dimensional grating are made before making p-type Ohm contact electrode on Top electrode contact layer.
When device of the invention works, will apply higher between p-type Ohm contact electrode and N-shaped Ohm contact electrode
Backward voltage.Because periodicity heterojunction structure absorbed layer is located between p-type Top electrode contact layer and p-type charge layer, it is applied to
Electric-field intensity above it is electric in theory much smaller than the intrinsic dynode layer being located between p-type charge layer and N-shaped bottom electrode contact layer
Son can collide in the case of ionization in intrinsic dynode layer, and the electronics in periodicity heterojunction structure absorbed layer ground state level is simultaneously
Will not be depleted due to the effect of electric field.When there is infrared light incident, in periodicity heterojunction structure absorbed layer ground state level
To on excited level, then light induced electron is directly moved to from excited level and collided in intrinsic dynode layer for electron transition
Ionization, realizes the snowslide detection to infrared photon.Wherein, ground state level and excited level in periodicity heterojunction structure absorbed layer
Energy difference will determine to absorb the wavelength of infrared photon.When ultraviolet light is incident, periodicity heterojunction structure absorbed layer SQW
（Or quantum potential barrier）From valence band transition conduction band, the light induced electron of generation is touched interior electronics in moving to intrinsic dynode layer again
Ionization is hit, the snowslide detection to ultraviolet photon is realized.Wherein, the long wavelength threshold for absorbing ultraviolet photon is primarily limited to absorb layer material
Energy gap.Based on device described in the invention, can simultaneously realize that ultraviolet-infrared bichromatic snowslide is detected, improve two
The response sensitivity of individual wave band.
Particularly, in order to prevent the electronics in absorbed layer ground state level in big reverse biased and nitride material polarized electric field
Collective effect under be depleted, so as to influence device in the work of infrared band, can also by element manufacturing mesa structure in pairs with
Three electrode controller parts are formed, the electric field different with the applying of intrinsic dynode layer regulates and controls it respectively to periodicity heterojunction structure absorbed layer
Band structure.Specific preparation method is that big mesa structure etched into bottom electrode contact layer, and small mesa structure is etching into electricity
Lotus layer is advisable, then beyond mesa region（Bottom electrode contact layer）N-shaped Ohm contact electrode is made, on small table top（On
Contact electrode layer）The first p-type Ohm contact electrode is made, the second p-type Ohm contact electrode is made on the charge layer for exposing.
By the energy for applying less voltage difference controlling cycle heterojunction structure absorbed layer between the first and second p-type Ohm contact electrodes
Band structure is substantially at flat rubber belting state, to ensure to have enough electronics to fill in ground state level, in the second p-type Ohm contact electrode
Apply larger backward voltage and between N-shaped Ohm contact electrode, avalanche multiplication effect occurs beneficial to photo-generated carrier.
To further illustrate feature of the invention and effect, below in conjunction with the accompanying drawings and specific embodiment does into one to the present invention
The explanation of step.
Brief description of the drawings
Fig. 1 is band structure schematic diagram and carrier transport schematic diagram of the diode of the present invention under working inverse voltage.
Fig. 2 is the cross section structure schematic diagram of diode in embodiment 1.
Fig. 3 is the conduction band band structure schematic diagram of the periodicity heterojunction structure absorbed layer of the diode of embodiment 1.
Fig. 4 is the cross section structure schematic diagram of diode in embodiment 2.
Fig. 5 is the conduction band band structure schematic diagram of the periodicity heterojunction structure absorbed layer of the diode of embodiment 2.
Wherein, 101- bottom electrodes contact layer, the intrinsic dynode layers of 103-, 105- charge layers, 107- periodicity hetero-junctions
Structure absorbed layer, 109- Top electrode contact layers, 201- substrates, 203- cushions, Ohm contact electrode under 205-n types, 207-
Ohm contact electrode in p-type, 209- the first p-type Ohm contact electrodes, 211- the second p-type Ohm contact electrodes, 301- absorbs
Layer electronic ground state energy level wave function, 303- absorbed layer excited electronic state energy level wave functions.
Specific embodiment
Embodiment 1
As shown in figure 1, the band structure under device working condition and carrier dynamics process are shown, wherein 101 are
Bottom electrode contact layer, 103 is intrinsic dynode layer, and 105 is charge layer, and 107 is periodicity heterojunction structure absorbed layer, and 109 is upper electricity
Pole contact layer., it is necessary to apply larger reverse biased to device under in working order, at this moment will be produced in intrinsic dynode layer big
Electrical potential difference, the electric-field intensity of this layer much larger than other layers electric-field intensity, for the photo-generated carrier ionization that collides is provided enough
Enough kinetic energy.Meanwhile, the energy band of periodicity heterojunction structure absorbed layer is substantially at flat rubber belting state, to ensure ground state level by electronics
Effectively filling.Under infrared ray excited, electron transition in periodicity heterojunction structure absorbed layer ground state level to excited level
As light induced electron, light induced electron enters charge layer in the presence of electric field by resonance tunnel-through, finally moves to intrinsic multiplication
Collide ionization in layer, completes the snowslide detection to infrared photon.The energy of infrared photon is absorbed by ground state level and is excited
The energy difference of state energy level is determined.Similarly, under the exciting of ultraviolet light, the electronics in hetero-junctions SQW and quantum potential barrier in valence band
To be excited on conduction band, form light induced electron, light induced electron will be completed to ultraviolet photon in finally moving to intrinsic dynode layer again
Snowslide detection.The peak response wavelength and response spectra half-breadth of ultraviolet light are on the one hand relevant with the energy gap of material, in addition also
It is relevant with transport efficiency of the light induced electron in different-energy distribution in conduction band.
As shown in Fig. 2 the schematic cross-section of the device architecture described in this example, the structure utilizes molecular beam epitaxy technique
（MBE）Growth on a sapphire substrate is formed.Cushion 203, bottom electrode contact layer 101, intrinsic is followed successively by upwards from substrate 201
Dynode layer 103, charge layer 105, periodicity heterojunction structure absorbed layer 107 and Top electrode contact layer 109, specific preparation method is such as
Under：
（1）1 μm of AlN cushions are first grown on a sapphire substrate；
（2）The N-shaped GaN bottom electrode contact layers of 800 nm are then grown on AlN cushions, doping concentration is 1 × 1019 cm-3；
（3）The GaN dynode layers of the nm of regrowth 300, i.e. avalanche region on N-shaped GaN bottom electrode contact layers；
（4）The p-type GaN charge layers of 50 nm are grown on GaN dynode layers, p-type doping concentration is 5 × 1017 cm-3；
（5）50 cycle GaN are grown on p-type GaN charge layers（1.5 nm）/AlN（1.5 nm）Heterojunction structure absorbed layer, two
Plant layer material alternating growth and keep strict periodicity, GaN layer N-shaped doping, doping concentration is 5 × 1019 cm-3；
（6）In 50 cycle GaN（1.5 nm）/AlN（1.5 nm）The p-type GaN of the nm of regrowth 100 on heterojunction structure absorbed layer
Top electrode contact layer, doping concentration is 1 × 1019 cm-3；
（7）The subregion of the material sample after the completion of growth is etched to by n using the photoetching process of standard, ICP etching technics
Type GaN bottom electrode contact layers, form the round table surface structure of a diameter of some tens of pm to hundreds of microns；
（8）It is the transparent electricity of Ni/Au of 2.5 nm/5 nm to use electron beam evaporation technique deposit thickness on round table surface structure
Pole, the N-shaped GaN surfaces then exposed after etching use the method deposit thickness of sputtering for the Ti/Au electricity of 20 nm/300 nm
Pole；
（9）Make 600 DEG C of 5 min of annealing in air atmosphere of the sample after electrode；
（10）Using plasma chemical vapour deposition technique（PECVD）300 nm SiO are deposited in sample surfaces2Passivation protection
Layer, using reactive ion etching（RIE）Technology is by the SiO on metal electrode2Passivation layer is etched away；
（11）45° angle is finally worn into the bottom surface side of substrate.
When device works, ultraviolet light is incident from surface, is arrived by Ni/Au transparency electrodes and p-type GaN Top electrode contact layers
Up to periodicity heterojunction structure absorbed layer, there is inter-band absorption.For infrared light, will be from 45 ° of inclined-plane incidences, to meet sub-band transition
Polarization alternative condition, i.e. incident light will have the electric field component perpendicular to epitaxial growth plane.
As shown in figure 3, being the periodicity heterojunction structure absorbed layer being calculated（Only provide 6 cycles）Conduction band schematic diagram and
Electron wave function is distributed, wherein 301 are distributed for ground state wave function, 303 are distributed for excitation state wave function.According to result of calculation, base
The energy difference of state energy level and excited level is about 0.8 eV, it is meant that will be the near-infrared generation near 1.55 μm to wavelength
Response.For ultraviolet light, according to conduction band ground state level and the result of calculation of valence band ground state level, its longwave absorption is limited in 320 nm
Near, i.e., the light wave for being longer than wavelength 320 nm is not responding to substantially.
Embodiment 2
As shown in figure 4, the schematic cross-section of the device architecture described in embodiment 2, wherein 201 is substrate, 203 is cushion,
101 is bottom electrode contact layer, and 103 is intrinsic dynode layer, and 105 is charge layer, and 107 is periodicity heterojunction structure absorbed layer, and 109 are
Top electrode contact layer, 205 is lower Ohm contact electrode, and 209 is the first p-type Ohm contact electrode, and 211 is that the second p-type ohm connects
Touched electrode, Material growth uses metal organic chemical compound vapor deposition technology（MOCVD）.
Specific preparation method is as follows：
（1）First in the GaN cushions of 0.5 μm of GaN single crystal Grown；
（2）Then the N-shaped GaN bottom electrode contact layers of 600 nm are grown, doping concentration is 1 × 1019 cm-3；
（3）The GaN dynode layers of 200 nm, i.e. avalanche region are grown on N-shaped GaN bottom electrode contact layers again；
（4）The p-type Al of 150 nm is grown on GaN dynode layers0.21Ga0.79N charge layers, p-type doping concentration is 2 × 1017
cm-3；
（5）In p-type Al0.21Ga0.7930 cycles, GaN/ that thickness is 4 nm/3 nm of regrowth on N charge layers
Al0.5Ga0.5N heterojunction structure absorbed layers, two kinds of layer material alternating growths simultaneously keep strict periodicity, the doping of GaN layer N-shaped, mix
Miscellaneous concentration is 5 × 1019 cm-3；
（6）In the GaN/Al that 30 cycles, thickness are 4 nm/3 nm0.5Ga0.5Regrowth 100 on N heterojunction structure absorbed layers
The p-type Al of nm0.21Ga0.79N Top electrode contact layers, doping concentration is 1 × 1018 cm-3, in order to improve the Ohmic contact of p-type electrode
Characteristic, can be with the p-type heavy doping GaN layer of the nm of regrowth 20, and doping concentration is 1 × 1019 cm-3；
（7）The subregion of the material sample after the completion of growth is etched to by n using the photoetching process of standard, ICP etching technics
Type GaN bottom electrode contact layers, form a diameter of 100 μm of round table surface structure；
（8）With SiO2It is mask, the circle ring area using ICP lithographic techniques by diameter on round table surface from 50-100 μm is etched
To charge layer, small mesa diameter is integrally formed for 50 μm, big mesa diameter is 100 μm of double mesa structures；
（9）One-dimensional or two-dimensional grating structure is produced in small table top upper surface using holographic exposure techniques and ICP lithographic techniques；
（10）It is the tin indium oxide of 200 nm to use electron beam evaporation technique deposit thickness on small table top（ITO）Transparency electrode
（That is the first p-type Ohm contact electrode）, on charge layer deposit thickness be 30 nm/300 nm the p-types of Ni/Au second ohm connect
Touched electrode, the N-shaped GaN surfaces deposit thickness for then being formed in etching again is the Cr/Au electrodes of 20 nm/300 nm；
（11）Make 500 DEG C of 10 min of annealing in oxygen atmosphere of the sample after electrode；
（12）300 nm SiN are deposited in sample surfaces using PECVD techniquexPassivation protection layer, it is using RIE technologies that metal is electric
The SiN for extremely going upxPassivation layer is etched away.
In the material structure, charge layer and Top electrode contact layer use Al0.21Ga0.79N materials, so selection
Purpose is in order that its lattice parameter is matched substantially with the integrally-built lattice parameter of absorbed layer, so as to avoid being produced in absorbed layer
Raw polarized electric field, it is ensured that it is in flat rubber belting state.When device works, ultraviolet light and infrared light are incident from surface, by ITO
Transparency electrode and Top electrode contact layer reach periodicity heterojunction structure absorbed layer, and inter-band absorption and Intersubband absorption occur respectively.
The effect of grating is to allow infrared optical diffraction, the electric field perpendicular to epitaxial growth plane that producing can encourage sub-band transition to divide
Amount.Because optical grating construction is just for infrared light, its size is much larger than the wavelength of ultraviolet light, therefore the basic transmission to ultraviolet light is not
Influence can be produced.Device work is applied to N-shaped Ohm contact electrode, the first p-type Ohm contact electrode using three electrode controls
V is designated as respectively with the voltage on the second p-type Ohm contact electroden、Vp1And Vp2, by VnAnd Vp2Relative size regulation and control multiplication
The band structure of layer, by Vp1And Vp2Relative size regulate and control absorbed layer band structure.In order that the light induced electron of absorbed layer
The electronics that can be effectively transported in dynode layer and in ground state level is not depleted, the V of applyingp1V should be slightly less thanp2, while in order to
Dynode layer produces enough big electric fields, Vp2V should be much smaller thann。
As shown in figure 5, being the embodiment device periodicity heterojunction structure absorbed layer being calculated（Only provide 4 cycles）
Conduction band schematic diagram and electron wave function are distributed, wherein 301 are distributed for ground state wave function, 303 are distributed for excitation state wave function.According to
The energy difference of result of calculation, ground state level and excited level is about 0.27 eV, then the Peak IR response wave length of device exists
Near 4.6 μm.For ultraviolet light, according to conduction band ground state level and the result of calculation of valence band ground state level, its longwave absorption limit exists
Near 340 nm, i.e., the light wave for being longer than wavelength 340 nm is not responding to substantially.
Claims (9)
1. single-chip integration ultraviolet-infrared bichromatic avalanche photodide, it is characterised in that the material structure of the diode is under
It is supreme including：Substrate, cushion, bottom electrode contact layer, intrinsic dynode layer, charge layer, periodicity heterojunction structure absorbed layer and on
Contact electrode layer；Transition of the electronics from conduction band ground state level to excited level corresponds to red in periodicity heterojunction structure absorbed layer
The absorption of outer photon, the transition from valence band to conduction band corresponds to the absorption of ultraviolet photon；Intrinsic dynode layer occurs for light induced electron
The region of impact ionization.
2. single-chip integration ultraviolet-infrared bichromatic avalanche photodide according to claim 1, it is characterised in that：It is described
Periodicity heterojunction structure absorbed layer is formed by two kinds of heterojunction material alternating growths, forms the SQW knot that periodicity is 1 to 500
Structure, potential well thickness is 0.001-0.02 μm, and N-shaped doping concentration is 5 × 1017 cm-3To 5 × 1019 cm-3Between, between SQW
Potential barrier thickness be 0.001-0.02 μm.
3. single-chip integration ultraviolet-infrared bichromatic avalanche photodide according to claim 2, it is characterised in that：It is described
Quantum well structure and cushion, bottom electrode contact layer, intrinsic dynode layer, charge layer, Top electrode contact layer, while being following material
In system any one or it is not of the same race：Aluminum gallium nitride, indium gallium nitrogen, indium aluminium nitrogen, aluminium gallium nitrogen, carborundum.
4. single-chip integration ultraviolet-infrared bichromatic avalanche photodide according to claim 1, it is characterised in that：It is described
The thickness of intrinsic dynode layer is 0.05 μm to 1.0 μm.
5. single-chip integration ultraviolet-infrared bichromatic avalanche photodide according to claim 1, it is characterised in that：It is described
The N-shaped doping concentration of bottom electrode contact layer is 1 × 1017 cm-3To 5 × 1019 cm-3Between, thickness is 0.1 μm to 10 μm.
6. single-chip integration ultraviolet-infrared bichromatic avalanche photodide according to claim 1, it is characterised in that：It is described
The p-type doping concentration of charge layer is 1 × 1017 cm-3To 1 × 1019 cm-3Between, thickness is 0.01 μm to 0.15 μm.
7. single-chip integration ultraviolet-infrared bichromatic avalanche photodide according to claim 1, it is characterised in that：Upper electricity
Pole contact layer p-type doping, doping concentration is 1 × 1017 cm-3To 1 × 1019 cm-3Between, thickness is 0.05 μm to 0.2 μm.
8. single-chip integration ultraviolet-infrared bichromatic avalanche photodide according to claim 1, it is characterised in that：It is described
Substrate is any one in sapphire, gallium nitride, aluminium nitride, carborundum, silicon, zinc oxide, and substrate thickness is 10-600 μm.
9. the side of the single-chip integration ultraviolet-infrared bichromatic avalanche photodide in claim 1-8 described in any one is prepared
Method, it is characterised in that step is as follows：1）In Grown cushion；2）Bottom electrode contact layer is grown on the buffer layer；3）
Intrinsic dynode layer is grown on bottom electrode contact layer；4）Charge layer is grown on intrinsic dynode layer；5）Grown on charge layer
Periodicity heterojunction structure absorbed layer；6）Top electrode contact layer is grown on periodicity heterojunction structure absorbed layer；7-1）In lower electricity
N-shaped Ohm contact electrode is made on the contact layer of pole, p-type Ohm contact electrode is made on Top electrode contact layer；7-2）Or
Person, makes N-shaped Ohm contact electrode on bottom electrode contact layer, and p-type Ohm contact electrode is made on Top electrode contact layer,
And increase by three electrode controller parts of another p-type Ohm contact electrode formation on charge layer；8）In order to realize near infrared light
Coupling, by the substrate one side bevel of the device after completing or make p-type Ohm contact electrode before
One-dimensional grating or two-dimensional grating are made on Top electrode contact layer.
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