CN209844202U - A semiconductor laser hollow laser light source emitting device - Google Patents

Abstract

The utility model discloses a semiconductor laser hollow laser light source emitting device, which belongs to the technical field of semiconductor lasers. The utility model is characterized in that the dihedral angle formed by the conical surface and the bottom surface of the regular octagonal pyramid is 45 degrees; the eight conical surfaces of the regular octagonal pyramid are the reflection surfaces of the semiconductor laser centimeter bar bar outgoing beam; each cone surface is evaporated High reflective optical film, the incident angle of high reflective optical film is 45 degrees, the central wavelength of high reflective optical film is the output wavelength of semiconductor laser centimeter bar; each cone corresponds to a semiconductor laser centimeter bar, semiconductor laser centimeter bar The cone axis of the regular octagonal pyramid is distributed axisymmetrically; the output beam of each semiconductor laser centimeter bar is collimated by a collimator to form parallel light; the parallel light is incident on the cone surface of the regular octagonal pyramid at an angle of 45 degrees, and passes through the cone of the regular octagonal pyramid Surface reflection, the reflected eight light beams are surrounded by a regular octagon to form a regular octagonal hollow light source, and the hollow light source is emitted in a direction parallel to the cone axis.

Description

A semiconductor laser hollow laser light source emitting device

technical field

The invention relates to a semiconductor laser hollow laser light source emitting device, which belongs to the technical field of semiconductor lasers.

Background technique

Hollow laser sources have broad application prospects in the fields of laser optics, optical information processing, particle waveguides, isotope separation, microelectronics and material science, biotechnology, medicine, atomics, and molecules. Various forms of hollow laser beams have been developed by using eight methods of beam shaping, such as geometric optics, optical holography, and computational holography. However, the common point of the hollow laser beams obtained by these methods is that the light intensity gradually weakens from the inner edge of the beam to the center. In theory, only the light intensity at the center of the beam is zero. Hollow laser beams with high light intensity contrast have important applications in the fields of optical manipulation of microscopic particles, optical information processing, and material science.

Contents of the invention

In order to improve the contrast of hollow laser light intensity and increase the size of dark spots, we have invented a semiconductor laser hollow laser light source emitting device. At the same time, the invention also has the advantage of easy installation and adjustment.

A kind of semiconductor laser hollow laser light source emitting device of the present invention is characterized in that, as shown in Figure 1, comprises: regular octagonal pyramid 1, semiconductor laser centimeter bar bar 2 and collimator mirror 3; Each taper surface and bottom surface of regular octagonal pyramid 1 The resulting dihedral angles are all 45 degrees; each cone surface of the regular octagonal pyramid 1 is evaporated with a high-reflection optical film, the incident angle of the high-reflection optical film is 45 degrees, and the central wavelength of the high-reflection optical film is semiconductor laser centimeter bar The output wavelength of bar 2; each cone surface of the regular octagonal pyramid 1 corresponds to a semiconductor laser centimeter bar bar 2, and the semiconductor laser centimeter bar bar 2 is distributed axisymmetrically with the cone axis of the regular octagonal pyramid 1, and each semiconductor laser centimeter bar bar 2 outputs same wavelength.

When a semiconductor laser hollow laser light source emitting device of the present invention is working, the same as the existing semiconductor laser centimeter bar, the output light of each semiconductor laser centimeter bar 2 needs to be collimated by a collimator 3 into a beam of parallel beams. light, as shown in Figure 2. In Figure 2, each beam of parallel light is incident on the conical surface of the regular octagonal pyramid 1 at an angle of 45 degrees. The size of the intersection line between the conical surface and the parallel beam should not be greater than the size of the semiconductor laser centimeter bar. The beams of eight semiconductor laser centimeter bars Reflected by the conical surface of the regular octagonal pyramid, the eight reflected beams form a regular octagon to form a regular octagonal hollow laser light source. The hollow laser light source is emitted parallel to the cone axis to achieve high light intensity contrast and large dark spot size. Laser light source.

It can be seen that in one semiconductor laser hollow laser light source emitting device of the present invention, the regular octagonal pyramid can be replaced with other regular pyramids to increase the size of the dark spot. In addition, the position of the centimeter bar of the semiconductor laser can be adjusted as required, as shown in the figure 2, semiconductor laser hollow laser light sources that meet the requirements of different dark spot sizes.

Since there are eight semiconductor laser centimeter bar bars 2 in the composition of the present invention, each semiconductor laser centimeter bar bar 2 is all placed horizontally, and the hollow laser beam output after being reflected by the regular octagonal prism emits with the vertical horizontal direction, therefore, reduces the semiconductor laser beam. Difficulty in the assembly and adjustment of the laser hollow laser light source emitting device.

Description of drawings

Fig. 1 is a top view of a structural schematic diagram of a semiconductor laser hollow laser light source emitting device of the present invention, which is also used as a summary drawing. Figure 2 is a cross-sectional view along the A-A direction in Figure 1, which can clearly show the beam path of each semiconductor laser centimeter bar.

Detailed ways

The present invention will be further described in detail below in conjunction with FIG. 1 .

Its specific scheme of a semiconductor laser hollow laser source emitting device of the present invention is as follows, as shown in Figure 1, the dihedral angle between each cone surface and the bottom surface of the regular octagonal pyramid 1 is 45 degrees; the regular octagonal pyramid is fixed and placed horizontally, A semiconductor laser centimeter bar 2 is placed horizontally in the eight cone directions, and the light emission direction of the semiconductor laser centimeter bar 2 points to the corresponding cone surface; each semiconductor laser centimeter bar 2 is axisymmetric with the cone axis of the regular octagonal pyramid 1 Distribution; the beam output from each semiconductor laser centimeter bar 2 is collimated by the collimator 3, and the beam becomes a beam of parallel light after collimation; each beam of parallel light is incident on each of the regular octagonal pyramid 1 at an angle of 45 degrees The size of the cone surface, the intersection line of the cone surface and the parallel beam should not be larger than the size of the semiconductor laser centimeter bar, and each beam of parallel light is reflected by the cone surface of the regular octagonal pyramid 1, according to the reflection when the light is reflected at the interface of two homogeneous media According to the law, the reflection angle of each beam of parallel light is equal to the incident angle when it is reflected on the two interfaces. Therefore, the eight reflected beams form a regular octagon to form a regular octagonal hollow laser light source. The hollow laser light source is parallel to the cone. It emits in the axial direction, and finally realizes a hollow laser light source with high light intensity contrast and large dark spot size.

Claims (1)

1. A semiconductor laser hollow laser light source emitting device, characterized in that it comprises: a regular octagonal pyramid (1), a semiconductor laser centimeter bar (2), a collimating mirror (3); the conical surface of the regular octagonal pyramid (1) The dihedral angle formed with the bottom surface is 45 degrees; each cone surface of the regular octagonal pyramid (1) is vapor-coated with a high-reflection optical film, the incident angle of the high-reflection optical film is 45 degrees, and the central wavelength of the high-reflection optical film is semiconductor The output wavelength of the laser centimeter bar (2); each cone surface of the regular octagonal pyramid (1) corresponds to a semiconductor laser centimeter bar (2), and the semiconductor laser centimeter bar (2) is formed by the cone axis of the regular octagonal pyramid (1) Axisymmetric distribution, each semiconductor laser centimeter bar (2) has the same output wavelength.