CN209844202U - Semiconductor laser hollow laser light source emitting device - Google Patents
Semiconductor laser hollow laser light source emitting device Download PDFInfo
- Publication number
- CN209844202U CN209844202U CN201921093937.2U CN201921093937U CN209844202U CN 209844202 U CN209844202 U CN 209844202U CN 201921093937 U CN201921093937 U CN 201921093937U CN 209844202 U CN209844202 U CN 209844202U
- Authority
- CN
- China
- Prior art keywords
- semiconductor laser
- conical surface
- light source
- regular
- bar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The utility model discloses a hollow laser light source emitter of semiconductor laser belongs to semiconductor laser technical field. The utility model is characterized in that the dihedral angle formed by the conical surface and the bottom surface of the regular octagonal pyramid is 45 degrees; eight conical surfaces of the regular octagonal pyramid are reflecting surfaces of the outgoing light beams of the semiconductor laser centimeter bar; each conical surface is evaporated with a high-reflection optical film, the incident angle of the high-reflection optical film is 45 degrees, and the central wavelength of the high-reflection optical film is the output wavelength of the semiconductor laser in cm bar; each conical surface corresponds to a semiconductor laser centimeter bar strip which is distributed in an axisymmetric way by the conical axis of a regular octapyramid; each semiconductor laser centimeter bar output light beam is collimated by a collimating mirror to form parallel light; the parallel light enters the conical surface of the regular octagon pyramid at an angle of 45 degrees, is reflected by the conical surface of the regular octagon pyramid, and the eight reflected light beams form a regular octagon to form a regular octagon hollow light source which is emitted in a direction parallel to the conical axis.
Description
Technical Field
The invention relates to a semiconductor laser hollow laser light source emitting device, and belongs to the technical field of semiconductor lasers.
Background
The hollow laser light source has wide application prospect in the fields of laser optics, optical information processing, particle waveguide, isotope separation, microelectronics, material science, biotechnology, medicine, atomics, molecular science and the like. Various forms of hollow laser beams have been developed using beam shaping, e.g., eight methods, such as geometric optics, optical holography, and computational holography. However, the common point of the hollow laser beams obtained by these methods is that the light intensity gradually decreases from the inner edge of the beam to the center, theoretically, only one point of the light intensity at the center of the beam is zero, and therefore, the hollow laser beam with high light intensity contrast cannot be obtained, and the hollow laser beam with high light intensity contrast has important applications in the fields of optical manipulation of microparticles, optical information processing, material science, and the like.
Disclosure of Invention
In order to improve the light intensity contrast of hollow laser and simultaneously improve the size of dark spots, the invention discloses a semiconductor laser hollow laser light source emitting device.
The invention relates to a semiconductor laser hollow laser light source emitting device, which is characterized in that as shown in figure 1, the device comprises: the device comprises a regular octagonal pyramid 1, semiconductor laser centimeter bar 2 and a collimating mirror 3; the dihedral angle formed by each conical surface of the regular octagonal pyramid 1 and the bottom surface is 45 degrees; each conical surface of the regular octagonal pyramid 1 is evaporated with a high-reflection optical film, the incident angle of the high-reflection optical film is 45 degrees, and the central wavelength of the high-reflection optical film is the output wavelength of the semiconductor laser centimeter bar 2; each conical surface of the regular octagonal pyramid 1 corresponds to one semiconductor laser centimeter bar 2, the semiconductor laser centimeter bar 2 is axially and symmetrically distributed with the conical axis of the regular octagonal pyramid 1, and the output wavelength of each semiconductor laser centimeter bar 2 is the same.
When the semiconductor laser hollow laser light source emitting device works, the output light of each semiconductor laser centimeter bar 2 needs to be collimated into a beam of parallel light by the collimating mirror 3 as same as the existing semiconductor laser centimeter bar, as shown in fig. 2. In fig. 2, each beam of parallel light is incident to the conical surface of the regular octagonal pyramid 1 at an angle of 45 degrees, the size of the intersection line of the conical surface and the parallel light beam is not larger than the size of light emitted by the semiconductor laser centimeter bar, the light beams of the eight semiconductor laser centimeter bar are reflected by the conical surface of the regular octagonal pyramid, the eight reflected light beams surround to form a regular octagon hollow laser light source, and the hollow laser light source is emitted in a direction parallel to the axis of the pyramid to realize the hollow laser light source with high light intensity contrast and large dark spot size.
Therefore, in the semiconductor laser hollow laser light source emitting device, the regular octagonal pyramid can be changed into other regular pyramids, so that the size of the dark spot is increased, and in addition, the position of the centimeter bar of the semiconductor laser can be adjusted according to the requirement, as shown in fig. 2, so that the semiconductor laser hollow laser light source meeting the requirements of different sizes of the dark spot.
The invention has the advantages that the eight semiconductor laser cm bars 2 are arranged in the structure, each semiconductor laser cm bar 2 is horizontally arranged, and hollow laser beams output after being reflected by the regular eight prisms are emitted in the vertical and horizontal directions, so the difficulty in assembling and adjusting the semiconductor laser hollow laser light source emitting device is reduced.
Drawings
Fig. 1 is a top view of a schematic structure diagram of a semiconductor laser hollow core laser light source emitting device according to the present invention, which is taken as an abstract drawing. Fig. 2 is a cross-sectional view taken along a-a in fig. 1, which clearly shows the traveling path of each semiconductor laser bar beam.
Detailed Description
The present invention is described in further detail below with reference to fig. 1.
The invention relates to a semiconductor laser hollow laser light source emitting device, which has the following specific scheme that as shown in figure 1, the dihedral angle between each conical surface and the bottom surface of a regular octagonal pyramid 1 is 45 degrees; the regular octagonal pyramid is fixedly and horizontally placed, a semiconductor laser centimeter bar 2 is horizontally placed in the direction of the eight conical surfaces respectively, and the light emitting direction of the semiconductor laser centimeter bar 2 points to the corresponding conical surface; each semiconductor laser centimeter bar 2 is axially and symmetrically distributed by the cone axis of the regular octagonal pyramid 1; the light beam output from each semiconductor laser centimeter bar 2 is collimated by a collimating mirror 3, and the collimated light beam becomes a beam of parallel light; each beam of parallel light is incident to each conical surface of the regular octagonal pyramid 1 at an angle of 45 degrees, the size of the intersection line of the conical surface and the parallel light beam is not larger than the size of light emitted by a centimeter bar of semiconductor laser, each beam of parallel light is reflected by the conical surface of the regular octagonal pyramid 1, and the reflection angle of each beam of parallel light when the two interfaces reflect is equal to the incident angle according to the reflection law when the light reflects on the interfaces of two uniform media, so that the eight reflected light beams form a regular octagon to form a regular octagon hollow laser light source, the hollow laser light source emits in the direction parallel to the cone axis, and finally the hollow laser light source with high light intensity contrast and large dark spot size is realized.
Claims (1)
1. A semiconductor laser hollow laser light source emitting device, comprising: the device comprises a regular octagonal pyramid (1), semiconductor laser centimeter bar bars (2) and a collimating mirror (3); the dihedral angle formed by the conical surface of the regular octagonal pyramid (1) and the bottom surface is 45 degrees; each conical surface of the regular octagonal pyramid (1) is evaporated with a high-reflection optical film, the incident angle of the high-reflection optical film is 45 degrees, and the central wavelength of the high-reflection optical film is the output wavelength of the semiconductor laser centimeter bar (2); each conical surface of the regular octagonal pyramid (1) corresponds to one semiconductor laser centimeter bar (2), the semiconductor laser centimeter bar (2) is axially and symmetrically distributed with the conical axis of the regular octagonal pyramid (1), and the output wavelength of each semiconductor laser centimeter bar (2) is the same.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921093937.2U CN209844202U (en) | 2019-07-13 | 2019-07-13 | Semiconductor laser hollow laser light source emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921093937.2U CN209844202U (en) | 2019-07-13 | 2019-07-13 | Semiconductor laser hollow laser light source emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209844202U true CN209844202U (en) | 2019-12-24 |
Family
ID=68899726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921093937.2U Active CN209844202U (en) | 2019-07-13 | 2019-07-13 | Semiconductor laser hollow laser light source emitting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209844202U (en) |
-
2019
- 2019-07-13 CN CN201921093937.2U patent/CN209844202U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10578721B2 (en) | LiDAR device | |
| JP2015501508A (en) | Light source system and laser light source | |
| JPH11504130A (en) | Apparatus and method for forming and guiding irradiation field of one or more solid-state lasers and / or semiconductor lasers | |
| CN103594918A (en) | Method and device for outputting hollow laser beam | |
| CN209055652U (en) | A kind of laser radar scanning system and laser radar | |
| CN1310352A (en) | Equipment for controlling light direction dynamically in wide view field | |
| CN102540471A (en) | Optical system for shaping a laser beam and laser system having such an optical system | |
| CN209844202U (en) | Semiconductor laser hollow laser light source emitting device | |
| CN212276015U (en) | Optical waveguide lens | |
| CN105793757B (en) | For making the device of shaping laser radiation | |
| CN110187610B (en) | Laser direct-writing photoetching system | |
| CN213476103U (en) | Inner hole cladding laser system based on reflective strip-shaped integrating mirror | |
| CN109814253A (en) | Structure optical mode group and three-dimensional sensing device | |
| CN2847319Y (en) | Laser beam equalizer for obtaining large area uniform square flare | |
| CN215264245U (en) | Lattice laser system | |
| CN110212403A (en) | A kind of hollow laser light source emitter of semiconductor laser | |
| CN209400801U (en) | Structure optical mode group and three-dimensional sensing device | |
| CN1553240A (en) | Method for changing optical parameters product of calibrating beam by reflecive lenses | |
| CN209896437U (en) | Semiconductor laser single tube beam combiner based on regular polygonal pyramid | |
| CN114465075A (en) | A word line laser for generating a word line group | |
| US20210141199A1 (en) | Small scale light projection device facilitating the structuring of light emitted for depth-calculating purposes | |
| CN109254336B (en) | Non-complete symmetrical micro-medium axicon phase device | |
| CN209913237U (en) | One hundred semiconductor laser single tube emitter of beam combination | |
| CN212175039U (en) | Inner hole cladding laser system based on rectangular integrating mirror | |
| CN1670564A (en) | Method for realizing semiconductor laser light beam shaping by employing coaxial symmetrical type micro reflectoscope array |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |